[go: up one dir, main page]

CN1673070A - Method for synthesizing alpha-phase silicon nitride powder by temperature-controlled activation and self-propagating combustion - Google Patents

Method for synthesizing alpha-phase silicon nitride powder by temperature-controlled activation and self-propagating combustion Download PDF

Info

Publication number
CN1673070A
CN1673070A CNA2004100298093A CN200410029809A CN1673070A CN 1673070 A CN1673070 A CN 1673070A CN A2004100298093 A CNA2004100298093 A CN A2004100298093A CN 200410029809 A CN200410029809 A CN 200410029809A CN 1673070 A CN1673070 A CN 1673070A
Authority
CN
China
Prior art keywords
silicon nitride
mixture
powder
phase
combustion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2004100298093A
Other languages
Chinese (zh)
Other versions
CN1307089C (en
Inventor
林志明
贾楠
杨筠
方侃
宋广智
封凌萍
李江涛
景满德
祁太元
王生渊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinghai Electric Power Research Technology Co ltd
Technical Institute of Physics and Chemistry of CAS
Original Assignee
Qinghai Electric Power Research Technology Co ltd
Technical Institute of Physics and Chemistry of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinghai Electric Power Research Technology Co ltd, Technical Institute of Physics and Chemistry of CAS filed Critical Qinghai Electric Power Research Technology Co ltd
Priority to CNB2004100298093A priority Critical patent/CN1307089C/en
Publication of CN1673070A publication Critical patent/CN1673070A/en
Application granted granted Critical
Publication of CN1307089C publication Critical patent/CN1307089C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Ceramic Products (AREA)

Abstract

本发明属于无机非金属材料领域,涉及一种控温活化自蔓延燃烧合成α相氮化硅粉体的方法。以重量份计,40~94份硅粉、6~60份氮化硅稀释剂和0.5~30份催化剂混合后,进行研磨活化处理,然后装入反应器中,在3~9MPa的氮气气氛中,诱发反应剂体系发生自蔓延燃烧合成反应,得到α相氮化硅粉。本发明的方法具有无需原料预处理、工序简便,整个生产过程时间短,诱发反应简便、动力消耗小,成本低、产物α相含量高、粉末产品颗粒尺寸均匀、易于后处理的优点。The invention belongs to the field of inorganic non-metallic materials, and relates to a method for synthesizing α-phase silicon nitride powder through temperature-controlled activation and self-propagating combustion. In parts by weight, 40-94 parts of silicon powder, 6-60 parts of silicon nitride diluent and 0.5-30 parts of catalyst are mixed, then ground and activated, and then loaded into a reactor, in a nitrogen atmosphere of 3-9MPa , inducing the reactant system to undergo a self-propagating combustion synthesis reaction to obtain α-phase silicon nitride powder. The method of the present invention has the advantages of no need for raw material pretreatment, simple process, short production process time, simple induced reaction, low power consumption, low cost, high content of α phase in the product, uniform particle size of the powder product, and easy post-processing.

Description

控温活化自蔓延燃烧合成α相氮化硅粉体的方法Method for synthesizing α-phase silicon nitride powder by self-propagating combustion with temperature control activation

                        技术领域Technical field

本发明属于无机非金属材料领域,涉及一种控温活化自蔓延燃烧合成α相氮化硅粉体的方法。The invention belongs to the field of inorganic non-metallic materials, and relates to a method for synthesizing α-phase silicon nitride powder through temperature-controlled activation and self-propagating combustion.

                        背景技术 Background technique

氮化硅陶瓷由于具有独特的物理和机械性能,例如硬度高、强度高、耐磨损、优良的热稳定性(特别是热膨胀系数低)、良好的化学稳定性、低摩擦系数、低密度以及高热导性能等,因此氮化硅陶瓷材料和器件被广泛地应用于发动机制造业、化学工业以及半导体工业等诸多领域。但高的原料成本却制约了氮化硅陶瓷零部件在各个领域中的大量应用,因此,国际材料界一直致力于开发新的低价制备氮化硅粉体的方法。Silicon nitride ceramics have unique physical and mechanical properties, such as high hardness, high strength, wear resistance, excellent thermal stability (especially low thermal expansion coefficient), good chemical stability, low friction coefficient, low density and High thermal conductivity, etc., so silicon nitride ceramic materials and devices are widely used in many fields such as engine manufacturing, chemical industry, and semiconductor industry. However, the high cost of raw materials has restricted the large-scale application of silicon nitride ceramic parts in various fields. Therefore, the international material community has been committed to developing new low-cost methods for preparing silicon nitride powder.

然而氮化硅粉体,从相组成上讲,存在很大的差别。有主相是高温稳定的β相-Si3N4粉体,也有主相是低温稳定的α相-Si3N4粉体。从烧结性能上讲,低温稳定的α相-Si3N4粉体的烧结性能要远远优于β相-Si3N4粉体,而且烧结过程中一般发生α→β相的转变,该相变通过溶解析出机制进行,伴随相变同时发生致密化。因此如何制备高α相-Si3N4粉体一直是的研究热点。However, silicon nitride powders are very different in terms of phase composition. There are β-Si 3 N 4 powders whose main phase is high temperature stable, and there are α phase-Si 3 N 4 powders whose main phase is low temperature stable. In terms of sintering performance, the sintering performance of α phase-Si 3 N 4 powder stable at low temperature is much better than that of β phase-Si 3 N 4 powder, and the transformation of α→β phase generally occurs during the sintering process. The phase transition proceeds through a dissolution-elution mechanism, and densification occurs simultaneously with the phase transition. Therefore, how to prepare high α phase-Si 3 N 4 powder has always been a research hotspot.

已知的通过氮化反应直接合成氮化硅粉末的方法可分为以下几种,第一种是工业上广泛应用的炉体合成方法;第二种是SiO2碳热还原法,第三种是相对较新的等离子化学合成法;第四种是燃烧合成领域的高温自蔓延合成法(SHS)。The known method of directly synthesizing silicon nitride powder by nitriding reaction can be divided into the following types, the first is the furnace body synthesis method widely used in industry; the second is SiO 2 carbothermal reduction method, the third It is a relatively new plasma chemical synthesis method; the fourth is the high-temperature self-propagating synthesis method (SHS) in the field of combustion synthesis.

炉体合成氮化硅的方法是:在氮气氛围中,在电炉中加热硅粉末使之发生氮化反应而得。二氧化硅高温碳热还原法也属于这种制备方法中的一种。从技术上可知,这种方法是合成高含量α相氮化硅的最有效、且相对简单的一种方法,这种方法主要在于硅粉在流动的氮气氛围中的氮化过程。但是,炉体合成氮化硅的方法需要两次氮化,第一步是硅粉在低于自身熔点即100~250℃的温度范围内进行氮化,这一步需要10~20小时;第二步氮化是在1200~1400℃之间完成,需时4~5小时,整个生产周期较长。而且这种炉体合成氮化硅的方法,需要严格地控制反应温度、氮气分压和第二步氮化过程中的气体流量,这些条件都是为了保证生成α相所需要的热环境。此外,这种方法高温长时间处理,需要较大的能源消耗。The method for synthesizing silicon nitride in a furnace body is: in a nitrogen atmosphere, heat silicon powder in an electric furnace to cause a nitriding reaction to occur. Silica high-temperature carbothermal reduction method also belongs to one of such preparation methods. Technically, this method is the most effective and relatively simple method for synthesizing high-content α-phase silicon nitride. This method mainly lies in the nitriding process of silicon powder in a flowing nitrogen atmosphere. However, the method for synthesizing silicon nitride in a furnace requires two nitriding steps. The first step is to nitride the silicon powder at a temperature lower than its own melting point, that is, 100-250°C. This step takes 10-20 hours; The step nitriding is completed between 1200-1400°C, it takes 4-5 hours, and the whole production cycle is longer. Moreover, this method of synthesizing silicon nitride in a furnace requires strict control of reaction temperature, nitrogen partial pressure and gas flow during the second nitriding process. These conditions are all to ensure the thermal environment required for the formation of α phase. In addition, this method requires high energy consumption for high temperature and long time processing.

等离子化学合成方法,是含硅(如SiH4、SiCl4)和氮(NH3、N2)的原料在高频发生器中进行等离子体化并发生反应来制备氮化硅粉体。用这种方法制备的氮化硅,多是非晶相,并含有较高的氧。另外,用等离子法制备的氮化硅粉体,与用其他方法制备的氮化硅粉体相比,具有较高的化学活性,在潮湿的空气中容易水解,因此,需要在制备与储存的过程中采取一定的防护措施。尽管等离子法制备的氮化硅粉体具有易烧结的优势,但是这种粉体的质量并不能满足制备高物理和力学性能的陶瓷材料的要求。还有,等离子化学合成与炉体合成一样,也需要较大的动力消耗。The plasma chemical synthesis method is that the raw materials containing silicon (such as SiH 4 , SiCl 4 ) and nitrogen (NH 3 , N 2 ) are plasmaized and reacted in a high-frequency generator to prepare silicon nitride powder. The silicon nitride prepared by this method is mostly amorphous and contains high oxygen. In addition, compared with silicon nitride powder prepared by other methods, silicon nitride powder prepared by plasma method has higher chemical activity and is easily hydrolyzed in humid air. Take certain protective measures during the process. Although the silicon nitride powder prepared by the plasma method has the advantage of being easy to sinter, the quality of this powder cannot meet the requirements for preparing ceramic materials with high physical and mechanical properties. In addition, plasma chemical synthesis, like furnace synthesis, also requires greater power consumption.

从技术上讲,高温自蔓延合成法是最有前途的一种方法。这种方法是利用反应的放热效应,其关键在于对混合物反应层的局部反应的诱发,以及燃烧合成中各组分间的延续交互作用。也就是说,自蔓延燃烧前期,主要是由于反应体系充分的放热效应,而引起的反应混合物层与层之间的自放热。硅与氮气反应的巨大热效应(180Kcal/mol),使氮化硅能够以燃烧合成的方式制得,也就是说,能够进行高温自蔓延合成。Technically, high-temperature self-propagating synthesis is the most promising method. This method utilizes the exothermic effect of the reaction, and its key lies in the induction of local reactions in the reaction layer of the mixture and the continuous interaction between the components in the combustion synthesis. That is to say, the early stage of self-propagating combustion is mainly due to the self-exothermic reaction between layers of the reaction mixture caused by the sufficient exothermic effect of the reaction system. The huge thermal effect (180Kcal/mol) of the reaction between silicon and nitrogen allows silicon nitride to be prepared by combustion synthesis, that is, high-temperature self-propagating synthesis.

目前已公开的燃烧合成法制备氮化硅粉体,也存在一些局限性。如Merzhanov等发明的“一种制备高α相氮化硅的方法”(专利US5032370),需要的氮气压力过高(4~30MPa),对设备要求苛刻,生产安全系数低,不利于大规模生产。同样,江国健等人发明的“自蔓延高温合成氮化硅铁粉的制备方法”(CN1275526)也存在反应压力过高,对设备要求苛刻的缺点,而且由于采用纯度较低的硅铁合金粉作为原料,产品中铁杂质含量高,基本上是商业价值较低的β相氮化硅,不能满足精细结构陶瓷的需要。而清华大学陈克新等人发明的“一种低压燃烧合成高α相氮化硅粉体的方法”(CN1362358A),采用的是硅的悬浮氮化技术,主要分以下几步完成,1.对原料金属硅粉进行酸洗或超声预处理,以提高原始硅粉的活性;2.加入活性剂、稀释剂和添加剂;3.将混合好的原料粉末在滚动球磨机上球磨15~30小时;4.混合后的原料在50~70℃烘干,放入低压燃烧合成反应装置内,抽真空后,从粉料底部吹入压力为0.1~1MPa的氮气,同时诱发原料粉燃烧,实现低压下硅的悬浮氮化。这种合成技术虽然可以大幅度降低所使用的氮气压力,降低对设备耐高压性能的要求,但是从整个反应流程上看,工序繁多,耗时长,生产周期长,诱发反应方式复杂且容易引入杂质、能耗大,使生产成本提高。The currently disclosed combustion synthesis method to prepare silicon nitride powder also has some limitations. For example, "a method for preparing high-α-phase silicon nitride" invented by Merzhanov et al. (patent US5032370), the nitrogen pressure required is too high (4-30MPa), the requirements for equipment are harsh, and the production safety factor is low, which is not conducive to large-scale production. . Similarly, the "preparation method for self-propagating high-temperature synthesis of silicon nitride ferrous powder" (CN1275526) invented by Jiang Guojian and others also has the disadvantages of high reaction pressure and strict requirements on equipment, and due to the use of ferrosilicon alloy powder with lower purity as raw material , The iron impurity content in the product is high, basically it is β-phase silicon nitride with low commercial value, which cannot meet the needs of fine structure ceramics. "A method for synthesizing high-α-phase silicon nitride powder by low-pressure combustion" (CN1362358A) invented by Chen Kexin of Tsinghua University and others uses the suspension nitriding technology of silicon, which is mainly completed in the following steps: 1. Metal silicon powder is pickled or ultrasonically pretreated to improve the activity of the original silicon powder; 2. Add active agents, diluents and additives; 3. Mill the mixed raw material powder on a rolling ball mill for 15 to 30 hours; 4. The mixed raw materials are dried at 50-70°C, put into a low-pressure combustion synthesis reaction device, and after vacuuming, nitrogen gas with a pressure of 0.1-1 MPa is blown from the bottom of the powder to induce the combustion of the raw material powder to realize silicon synthesis under low pressure. Suspension nitriding. Although this synthesis technology can greatly reduce the nitrogen pressure used and reduce the requirements for the high-pressure resistance of the equipment, from the perspective of the entire reaction process, there are many procedures, time-consuming, long production cycle, complicated induced reaction methods and easy introduction of impurities. , Energy consumption is big, and production cost is improved.

                        发明内容Contents of the invention

本发明的目的在于,克服已有技术中工序繁多、生产周期长、诱发反应方式复杂、能耗大和成本高等缺点,提供一种在适当的压力下、操作简便、生产周期短的控温活化自蔓延燃烧合成α相氮化硅粉体的方法。The purpose of the present invention is to overcome the disadvantages of the prior art, such as numerous procedures, long production cycle, complicated induced reaction mode, large energy consumption and high cost, and provide a temperature-controlled activated automatic A method for synthesizing α-phase silicon nitride powder by spreading combustion.

本发明提供的控温活化自蔓延燃烧合成α相氮化硅的方法,包括以下步骤:The method for synthesizing α-phase silicon nitride by temperature-controlled activated self-propagating combustion provided by the present invention comprises the following steps:

(1)配料:(1) Ingredients:

以重量份计,将硅粉:40~94份,氮化硅稀释剂:6~60份,催化剂:0.5~30份进行混合,得到一混合物;In parts by weight, silicon powder: 40-94 parts, silicon nitride diluent: 6-60 parts, catalyst: 0.5-30 parts are mixed to obtain a mixture;

其中所述的催化剂为卤化铵盐;Wherein said catalyst is ammonium halide;

(2)活化处理:(2) Activation treatment:

将步骤(1)得到的混合物进行研磨活化处理;The mixture obtained in step (1) is subjected to grinding and activation treatment;

(3)燃烧反应:(3) Combustion reaction:

将步骤(2)研磨后的混合物以1.0~2.4g/cm3的松装密度装入反应器中,抽真空后,充入氮气、氮气与氨气或氮气与氩气的气体,使压力控制在3~9MPa,然后诱发混合物进行燃烧合成反应;Put the ground mixture in step (2) into the reactor with a bulk density of 1.0 to 2.4 g/cm 3 , and after vacuuming, fill it with nitrogen, nitrogen and ammonia or nitrogen and argon to control the pressure At 3 ~ 9MPa, then induce the mixture to undergo combustion synthesis reaction;

所述的充入氮气与氨气或氮气与氩气的混合气体时,其中氨气或氩气的分压为0.1~0.5MPa;When filling the mixed gas of nitrogen and ammonia or nitrogen and argon, the partial pressure of ammonia or argon is 0.1-0.5 MPa;

(4)反应完成:(4) The reaction is completed:

当反应器内的压力降低至2~7MPa时,燃烧合成反应完成,冷却至室温后,释放反应器内压力,得到松散的块状产物,经细磨后,得到α相氮化硅粉。When the pressure in the reactor is reduced to 2-7MPa, the combustion synthesis reaction is completed. After cooling to room temperature, the pressure in the reactor is released to obtain a loose block product, which is finely ground to obtain α-phase silicon nitride powder.

本发明为了更好地实现燃烧合成高α相氮化硅,通过设计反应物体系成份和改变氮气压力,拓展了原料的可燃成分范围,并降低最高燃烧温度,使之调整到适合α相氮化硅形成的适宜温度区间(<1600℃);同时提高反应物的活性,以保证燃烧波足以在较低的燃烧温度下得以蔓延。我们将这种控制最高燃烧温度的同时,又提高反应物活性的技术称之为控温活化技术。In order to better realize the combustion synthesis of high-alpha-phase silicon nitride, the present invention expands the range of combustible components of raw materials by designing the reactant system components and changing the nitrogen pressure, and reduces the maximum combustion temperature to adjust it to be suitable for α-phase nitriding Suitable temperature range for silicon formation (<1600°C); at the same time, the activity of the reactants is increased to ensure that the combustion wave is sufficient to spread at a lower combustion temperature. We call this technology of controlling the maximum combustion temperature and increasing the activity of reactants as temperature-controlled activation technology.

由于硅粉与氮气反应的放热量太高,因此,在步骤(1)中,通过向原料硅粉中加入氮化硅粉体加以稀释的方法来降低燃烧反应温度;也可用气相反应剂稀释的方法(如向N2气中混入Ar等气体)。同时,为了在低的温度下使燃烧反应自维持,向原料硅粉中加入催化剂并进行活化处理,以起到提高反应物活性的目的。所用的催化剂在合成过程中起双重作用。第一,它可作为原料硅粉的稀释剂,也就是用于降低燃烧温度,为合成α相氮化硅提供适宜温度。第二,它在燃烧初期被气化,并与硅形成Si(NH2)2中间产物,中间产物将在燃烧过程中促进α相氮化硅生成。出于这一目的,单一卤化铵盐或两种卤化铵盐的混合物均可用做催化剂。Because the heat release of silicon powder and nitrogen reaction is too high, therefore, in step (1), reduce the combustion reaction temperature by adding silicon nitride powder to the raw material silicon powder to dilute; method (such as mixing Ar and other gases into N2 gas). At the same time, in order to make the combustion reaction self-sustained at low temperature, a catalyst is added to the raw silicon powder and activated to improve the activity of the reactants. The catalyst used plays a dual role in the synthesis. First, it can be used as a diluent for raw silicon powder, that is, to reduce the combustion temperature and provide a suitable temperature for the synthesis of α-phase silicon nitride. Second, it is gasified at the initial stage of combustion and forms Si(NH 2 ) 2 intermediate product with silicon, which will promote the formation of α-phase silicon nitride during the combustion process. For this purpose, either a single ammonium halide salt or a mixture of two ammonium halide salts can be used as catalyst.

在本发明中,所使用的Si粉,粒径范围为0.1~110μm;氮化硅稀释剂即氮化硅粉,粒径范围为0.05~78μm,并优选α相含量大于85wt%;所使用的催化剂为卤化铵盐,优选NH4Cl、NH4F或其混合物,其中混合物中NH4Cl与NH4F的重量比为0.1~10。In the present invention, the Si powder used has a particle size range of 0.1 to 110 μm; the silicon nitride diluent, i.e. silicon nitride powder, has a particle size range of 0.05 to 78 μm, and preferably the α phase content is greater than 85 wt %; the used The catalyst is an ammonium halide salt, preferably NH 4 Cl, NH 4 F or a mixture thereof, wherein the weight ratio of NH 4 Cl to NH 4 F in the mixture is 0.1-10.

在本发明步骤(1)的配料过程中,优选先将硅粉和Si3N4稀释剂按比例混合后进行干燥处理,例如放入烘箱中进行烘干处理,然后再加入催化剂。In the compounding process of the step (1) of the present invention, it is preferable to first mix the silicon powder and the Si 3 N 4 diluent in proportion and then perform drying treatment, for example, put them in an oven for drying treatment, and then add the catalyst.

对于步骤(1)得到的混合物的活化处理,可采用机械活化处理,包括高能行星式球磨、高能卧式转子研磨、高能震动研磨或搅拌球磨等,球磨时间1~10小时。研磨也即球磨,本身既可磨细又可起活化作用,磨细到一定程度时,会发生微晶诱发的非晶化,即Si粉由晶态转变微非晶态,对活化程度的要求是以非晶相含量不小于5wt%为宜。然后,将研磨后的混合物粉末松装于耐高温的容器(例如多孔石墨坩锅)中,松装密度为1.0~2.4g/cm3,再一起放入反应器中。用于本发明中的反应器是用不锈钢制成的带冷却水套的高压容器。For the activation treatment of the mixture obtained in step (1), mechanical activation treatment can be adopted, including high-energy planetary ball milling, high-energy horizontal rotor milling, high-energy vibration milling or stirring ball milling, etc., and the ball milling time is 1 to 10 hours. Grinding, also known as ball milling, can be ground and activated. When it is ground to a certain extent, microcrystalline-induced amorphization will occur, that is, Si powder changes from crystalline to micro-amorphous. The requirements for the degree of activation It is advisable that the amorphous phase content is not less than 5wt%. Then, the ground mixture powder is loosely packed in a high-temperature-resistant container (such as a porous graphite crucible) with a bulk density of 1.0-2.4 g/cm 3 , and put into the reactor together. The reactor used in the present invention is a high-pressure vessel made of stainless steel with a cooling water jacket.

在本发明中,采用W螺旋丝或碳纸作发热体,一般通入10~30A的电流,以局部加热方式诱发粉末体系发生燃烧合成反应。例如用φ0.5mm钨丝绕成线圈,通以10~30A的脉冲电流5~10s,使线圈发热,由此加热了与之接触的原料混合物层,使原料混合物层达到硅与氮气发生反应的温度,接着,化学反应就在原料混合物中以蔓延的方式一层一层推进燃烧,在这一系统中,燃烧波的蔓延速率为0.01~20mm/s(燃烧波的蔓延速率与氮化介质和原料混合物组分有关)。In the present invention, W helical wire or carbon paper is used as the heating element, and a current of 10-30A is generally passed through to induce the combustion synthesis reaction of the powder system by local heating. For example, a φ0.5mm tungsten wire is used to wind a coil, and a pulse current of 10-30A is applied for 5-10s to heat the coil, thereby heating the raw material mixture layer in contact with it, so that the raw material mixture layer reaches the point where silicon and nitrogen react. temperature, and then, the chemical reaction advances the combustion layer by layer in the way of spreading in the raw material mixture. In this system, the spreading rate of the burning wave is 0.01-20mm/s (the spreading rate of the burning wave is related to the nitriding medium and related to the composition of the raw material mixture).

当反应器内的压力降低至2~7MPa,也即初始压力的80%时,燃烧合成反应完成,整个反应过程持续10~30分钟;燃烧合成反应完成后,冷却至室温,然后释放反应器内压力,可以得到松散的块状产物,细磨后,得到含量85~97Wt%的α相氮化硅粉。When the pressure in the reactor is reduced to 2-7MPa, which is 80% of the initial pressure, the combustion synthesis reaction is completed, and the whole reaction process lasts for 10-30 minutes; after the combustion synthesis reaction is completed, cool to room temperature, and then release the pressure, a loose block product can be obtained, and after fine grinding, an α-phase silicon nitride powder with a content of 85-97wt% is obtained.

本发明与已有技术相比的优点:Advantage of the present invention compared with prior art:

1)原材料粉体方便可得,原料硅粉无需酸洗等特殊处理。1) The raw material powder is conveniently available, and the raw silicon powder does not need special treatment such as pickling.

2)活化处理时间即球磨时间仅1~10小时,优选1~5小时;而燃烧合成反应迅速,反应时间为10~30分钟,缩短了整个生产周期。2) The activation treatment time, that is, the ball milling time is only 1-10 hours, preferably 1-5 hours; while the combustion synthesis reaction is rapid, and the reaction time is 10-30 minutes, which shortens the entire production cycle.

3)依靠原料自身的放热效应完成高温自蔓延反应,反应诱发后,无需外加能源,而引燃化学反应所需的电能可忽略不计。因此,节约能源,降低成本。3) Relying on the exothermic effect of the raw material itself to complete the high-temperature self-propagating reaction, after the reaction is induced, no external energy is required, and the electric energy required to ignite the chemical reaction is negligible. Therefore, save energy and reduce costs.

4)本发明克服了常规自蔓延过程中,由于反应温度过高,反应速度太快,反应难以控制,致使反应进行不完全,转化率低,合成产品中α相含量低,且难以粉碎的缺点,通过加入稀释剂和催化剂,并调整二者加入量,有效地控制反应温度,制得纯度高,α相含量高、粒度分布均匀的氮化硅粉体。4) The present invention overcomes in the conventional self-propagating process, because the reaction temperature is too high, the reaction speed is too fast, the reaction is difficult to control, resulting in incomplete reaction, low conversion rate, low alpha phase content in the synthetic product, and the shortcomings of being difficult to pulverize , by adding diluent and catalyst, and adjusting the amount of both additions, the reaction temperature can be effectively controlled, and silicon nitride powder with high purity, high α-phase content and uniform particle size distribution can be obtained.

5)由于稀释剂和催化剂的引入以及通过研磨引入非晶相等活化处理手段,有效地控制了反应进程,使燃烧合成所需的氮气压力降低(反应压力3~9MPa)。进而低了对设备的要求,提高了生产安全系数。5) Due to the introduction of diluent and catalyst and the introduction of amorphous phase activation treatment means through grinding, the reaction process is effectively controlled, and the nitrogen pressure required for combustion synthesis is reduced (reaction pressure 3-9 MPa). In turn, the requirements for equipment are lowered, and the production safety factor is improved.

                        具体实施方式 Detailed ways

实施例1Example 1

平均粒径0.1μm的Si粉、平均粒径0.5μm的Si3N4粉体(α相含量90wt%左右)和NH4F,按重量份比50∶28∶22进行取样,将它们放入振动球磨机的球磨罐中球磨9小时,使其充分混合和活化;将混合活化后的物料置于多孔石墨坩埚中,使松装密度约为1.0~2.4g/cm3,在物料上层放置一绕成螺旋状的钨丝,钨丝直径为0.5mm,再一起放入燃烧合成反应器内;抽真空后,从反应器底部充入高纯氮气,直到氮气压力达到8MPa;将螺旋钨丝通以脉冲电流,使其发热,诱发原料粉体燃烧,燃烧反应持续15分钟后,冷却至室温,再将高压N2排放掉,细磨产品,即得到燃烧反应产物。反应产物用日本理学的D/MAX-IIB型X-射线衍射分析仪进行物相定量分析,其结果为α相氮化硅含量为91wt%的氮化硅粉体,其中残余Si的含量为5wt%。Si powder with an average particle size of 0.1 μm, Si 3 N 4 powder with an average particle size of 0.5 μm (alpha phase content is about 90wt%) and NH 4 F are sampled at a weight ratio of 50:28:22, and they are placed in Mill in the ball mill tank of the vibrating ball mill for 9 hours to make it fully mixed and activated; place the mixed and activated material in a porous graphite crucible so that the bulk density is about 1.0-2.4g/cm 3 , and place a winding on the upper layer of the material Spiral tungsten wire with a diameter of 0.5mm is put into the combustion synthesis reactor together; after vacuuming, high-purity nitrogen is filled from the bottom of the reactor until the nitrogen pressure reaches 8MPa; the spiral tungsten wire is passed through Pulse current to make it generate heat and induce the combustion of the raw material powder. After the combustion reaction lasts for 15 minutes, cool down to room temperature, then discharge high-pressure N2 , and finely grind the product to obtain the combustion reaction product. The reaction product was quantitatively analyzed with a D/MAX-IIB X-ray diffraction analyzer of Japan Rigaku, and the result was a silicon nitride powder with an α-phase silicon nitride content of 91wt%, and a residual Si content of 5wt% %.

实施例2Example 2

平均粒径5μm的Si粉、平均粒径20nm的Si3N4粉体(α相含量90wt%左右)、NH4F和NH4Cl,按重量份比45∶36∶8∶11取样,先将称得的Si粉和Si3N4混合后放入烘箱,在100℃条件下干燥1.5小时,取出后加入称得的NH4F和NH4Cl,一起放入行星式球磨机的球磨罐中球磨5小时,使其充分混合和活化,非晶相含量不小于5wt%;将混合后的物料置于多孔石墨坩埚内,使松装密度约为1.0~2.4g/cm3,在物料上层放置一螺旋钨丝,再一起放入燃烧合成反应器内;抽真空后,从底部先充入氨气至0.1MPa,再充入高纯氮气,直到反应器内压力达到7.5MPa;将螺旋钨丝通以12A的脉冲电流,使其发热,诱发原料粉体燃烧,燃烧反应持续30分钟后,冷却至室温,放空气体,细磨产品,即得到反应产物,反应产物用日本理学的D/MAX-IIB型X-射线衍射分析仪进行定量物相分析,其结果为α相氮化硅含量为93wt%的氮化硅粉体,X-射线衍射分析无游离Si。Si powder with an average particle size of 5 μm, Si 3 N 4 powder with an average particle size of 20 nm (alpha phase content is about 90 wt%), NH 4 F and NH 4 Cl are sampled at a weight ratio of 45:36:8:11. Put the weighed Si powder and Si 3 N 4 into the oven, dry at 100°C for 1.5 hours, take it out, add the weighed NH 4 F and NH 4 Cl, and put them together into the ball mill jar of the planetary ball mill Ball mill for 5 hours to make it fully mixed and activated, and the amorphous phase content is not less than 5wt%; put the mixed material in a porous graphite crucible so that the bulk density is about 1.0-2.4g/cm 3 , and place it on the upper layer of the material Put a spiral tungsten wire together into the combustion synthesis reactor; after vacuuming, fill the ammonia gas from the bottom to 0.1MPa, and then fill it with high-purity nitrogen until the pressure in the reactor reaches 7.5MPa; put the spiral tungsten wire Pass a pulse current of 12A to make it generate heat and induce the combustion of the raw material powder. After the combustion reaction lasts for 30 minutes, cool down to room temperature, release the air, and finely grind the product to obtain the reaction product. IIB type X-ray diffraction analyzer conducts quantitative phase analysis, and the result is silicon nitride powder with α-phase silicon nitride content of 93wt%, and there is no free Si in X-ray diffraction analysis.

实施例3Example 3

平均粒径0.5μm的Si粉、平均粒径78μm的Si3N4粉体(α相含量90wt%左右)和NH4Cl,按重量份比89∶6∶5取样,放入行星式球磨机的球磨罐中,球磨4.5小时,使其充分混合和活化,非晶相含量不小于5wt%;将混合活化后的物料置于多孔石墨坩埚中,使松装密度约为1.0~2.4g/cm3,在物料上层放置一绕成螺旋状的钨丝,钨丝直径为0.5mm,再一起放入燃烧合成反应器内;抽真空后,先充入氨气至0.5MPa,再充入高纯氮气,直到反应器内压力达到3MPa;将螺旋钨丝通以12A的脉冲电流,使其发热,诱发原料粉体燃烧,燃烧反应持续28分钟后,冷却至室温,放空气体,细磨产品,即可得反应产物,反应产物用日本理学的D/MAX-IIB型X-射线衍射分析仪进行XRD分析,其结果为α相氮化硅含量为92wt%的氮化硅粉体,X-射线衍射分析无游离Si。Si powder with an average particle size of 0.5 μm, Si 3 N 4 powder with an average particle size of 78 μm (the α phase content is about 90 wt%) and NH 4 Cl are sampled at a weight ratio of 89:6:5, and put into the planetary ball mill. In a ball mill tank, ball mill for 4.5 hours to make it fully mixed and activated, and the amorphous phase content is not less than 5wt%; the mixed and activated material is placed in a porous graphite crucible, so that the bulk density is about 1.0-2.4g/ cm3 , place a helical tungsten wire on the upper layer of the material, the diameter of the tungsten wire is 0.5mm, and put them together into the combustion synthesis reactor; after vacuuming, first fill with ammonia to 0.5MPa, and then fill with high-purity nitrogen , until the pressure in the reactor reaches 3MPa; pass the spiral tungsten wire with a pulse current of 12A to make it generate heat and induce the combustion of the raw material powder. After the combustion reaction lasts for 28 minutes, cool to room temperature, release the air, and finely grind the product. Obtain the reaction product, and the reaction product carries out XRD analysis with the D/MAX-IIB type X-ray diffraction analyzer of Japan Rigaku, and the result is that the silicon nitride powder body of α-phase silicon nitride content is 92wt%, X-ray diffraction analysis No free Si.

Claims (10)

1. a temperature control activates the method that self-propagating combustion synthesizes the α phase silicon nitride powder, it is characterized in that step is as follows:
(1) batching:
In weight part, with silica flour: 40~94 parts, the silicon nitride thinner: 6~60 parts, catalyzer: 0.5~30 part is mixed, and obtains a mixture;
Wherein said catalyzer is an ammonium halide salt;
(2) activation treatment:
The mixture that step (1) is obtained grinds activation treatment;
(3) combustion reactions:
Mixture after step (2) ground is with 1.0~2.4g/cm 3Loose density pack in the reactor, after vacuumizing, charge into the mixed gas of nitrogen, nitrogen and ammonia or nitrogen and argon gas, make pressure-controlling at 3~9MPa, bring out mixture then and carry out combustion synthesis reaction;
During the described mixed gas that charges into nitrogen and ammonia or nitrogen and argon gas, wherein the dividing potential drop of ammonia or argon gas is 0.1~0.5MPa;
(4) reaction is finished:
When the pressure in the reactor was reduced to 2~7MPa, combustion synthesis reaction was finished, be cooled to room temperature after, the releasing reactor internal pressure, resultant loose block product after fine grinding, obtains α phase silicon nitride powder.
2. method according to claim 1 is characterized in that, in the blending process of described step (1), earlier with silica flour and Si 3N 4Carry out drying treatment after thinner is mixed in proportion, add catalyzer again.
3. method according to claim 1 and 2 is characterized in that, described silica flour particle size range is 0.1~110 μ m.
4. method according to claim 1 and 2 is characterized in that, described silicon nitride thinner is a silicon nitride powder, and particle size range is 0.05~78 μ m, and wherein the α phase content is greater than 85wt%.
5. method according to claim 1 is characterized in that, described ammonium halide salt is NH 4Cl, NH 4F or its mixture, wherein NH in the mixture 4Cl and NH 4The weight ratio of F is 0.1~10.
6. method according to claim 1 is characterized in that, described grinding activation comprises that high-energy planetary formula ball milling, the horizontal rotor of high energy grind, the high energy vibrations are ground or stirring ball-milling.
7. method according to claim 1 is characterized in that, described mixture after step (2) is ground is packed in the reactor, is that the mixture pine after step (2) is ground is loaded in the porous graphite crucible, puts into reactor more together.
8. method according to claim 1 is characterized in that, described activation degree is that amorphous content is not less than 5wt%.
9. method according to claim 1 is characterized in that, the described mixture that brings out carries out combustion synthesis reaction and is, makes heating element by tungsten helix or carbon paper, feeds the electric current of 10~30A, brings out in the local heating mode and realizes.
10. method according to claim 1 is characterized in that, the described combustion synthesis reaction time is 10~30 minutes.
CNB2004100298093A 2004-03-25 2004-03-25 Method for synthesizing alpha-phase silicon nitride powder by temperature-controlled activation and self-propagating combustion Expired - Fee Related CN1307089C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2004100298093A CN1307089C (en) 2004-03-25 2004-03-25 Method for synthesizing alpha-phase silicon nitride powder by temperature-controlled activation and self-propagating combustion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2004100298093A CN1307089C (en) 2004-03-25 2004-03-25 Method for synthesizing alpha-phase silicon nitride powder by temperature-controlled activation and self-propagating combustion

Publications (2)

Publication Number Publication Date
CN1673070A true CN1673070A (en) 2005-09-28
CN1307089C CN1307089C (en) 2007-03-28

Family

ID=35045890

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100298093A Expired - Fee Related CN1307089C (en) 2004-03-25 2004-03-25 Method for synthesizing alpha-phase silicon nitride powder by temperature-controlled activation and self-propagating combustion

Country Status (1)

Country Link
CN (1) CN1307089C (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101269802B (en) * 2007-03-21 2010-08-11 中国科学院理化技术研究所 Combustion synthesis of Si in air3N4Powder and Si3N4Method for preparing/SiC composite powder
CN101857441A (en) * 2010-06-25 2010-10-13 清华大学 A method for preparing β-silicon nitride powder
CN101269979B (en) * 2007-03-23 2011-01-12 中国科学院理化技术研究所 Method for synthesizing superfine aluminium nitride powder by combustion
CN101983947A (en) * 2010-11-24 2011-03-09 云南大学 Novel method for synthesizing silicon nitride powder with high alpha phases by catalysis and nitridation
CN105483823A (en) * 2015-12-04 2016-04-13 烟台同立高科新材料股份有限公司 Silicon nitride powder for solar polysilicon ingot casting and preparation method thereof
CN106430127A (en) * 2016-11-16 2017-02-22 中国科学院理化技术研究所 Preparation method of high alpha phase silicon nitride powder
CN106673670A (en) * 2016-12-30 2017-05-17 烟台同立高科新材料股份有限公司 Preparation method of high-purity silicon nitride powder
CN106747640A (en) * 2017-01-13 2017-05-31 武汉科技大学 A kind of beta-silicon nitride nanowire enhancing porous silicon carbide silicon materials and preparation method thereof
JP2017114727A (en) * 2015-12-24 2017-06-29 エルジー・ケム・リミテッド METHOD FOR PRODUCING α SILICON NITRIDE
CN109734456A (en) * 2019-03-11 2019-05-10 中国科学院理化技术研究所 A kind of preparation method of porous silicon nitride ceramic
JPWO2019167879A1 (en) * 2018-02-28 2021-02-12 株式会社トクヤマ Method for manufacturing silicon nitride powder
CN114409414A (en) * 2020-10-28 2022-04-29 中国科学院理化技术研究所 A method for preparing high-purity silicon nitride powder using silicon powder with high oxygen content as raw material
CN114516752A (en) * 2021-12-23 2022-05-20 内蒙古工业大学 Porous calcium silicate ceramic and ultra-fast preparation method thereof
CN119100803A (en) * 2024-08-30 2024-12-10 天津炜润达新材料科技有限公司 A production process for co-producing titanium nitride and ferrosilicon nitride

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1173880C (en) * 2002-01-22 2004-11-03 清华大学 A method for synthesizing high-alpha-phase silicon nitride powder by low-pressure combustion

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101269802B (en) * 2007-03-21 2010-08-11 中国科学院理化技术研究所 Combustion synthesis of Si in air3N4Powder and Si3N4Method for preparing/SiC composite powder
CN101269979B (en) * 2007-03-23 2011-01-12 中国科学院理化技术研究所 Method for synthesizing superfine aluminium nitride powder by combustion
CN101857441A (en) * 2010-06-25 2010-10-13 清华大学 A method for preparing β-silicon nitride powder
CN101857441B (en) * 2010-06-25 2012-11-14 清华大学 Method for preparing beta-silicon nitride powder
CN101983947A (en) * 2010-11-24 2011-03-09 云南大学 Novel method for synthesizing silicon nitride powder with high alpha phases by catalysis and nitridation
CN105483823A (en) * 2015-12-04 2016-04-13 烟台同立高科新材料股份有限公司 Silicon nitride powder for solar polysilicon ingot casting and preparation method thereof
JP2017114727A (en) * 2015-12-24 2017-06-29 エルジー・ケム・リミテッド METHOD FOR PRODUCING α SILICON NITRIDE
JP7240800B2 (en) 2015-12-24 2023-03-16 エルジー・ケム・リミテッド Method for producing α-silicon nitride
CN106430127B (en) * 2016-11-16 2018-10-19 中国科学院理化技术研究所 Preparation method of high alpha phase silicon nitride powder
CN106430127A (en) * 2016-11-16 2017-02-22 中国科学院理化技术研究所 Preparation method of high alpha phase silicon nitride powder
CN106673670A (en) * 2016-12-30 2017-05-17 烟台同立高科新材料股份有限公司 Preparation method of high-purity silicon nitride powder
CN106747640A (en) * 2017-01-13 2017-05-31 武汉科技大学 A kind of beta-silicon nitride nanowire enhancing porous silicon carbide silicon materials and preparation method thereof
CN106747640B (en) * 2017-01-13 2019-10-25 武汉科技大学 A kind of silicon nitride nanowire reinforced porous silicon carbide material and preparation method thereof
JPWO2019167879A1 (en) * 2018-02-28 2021-02-12 株式会社トクヤマ Method for manufacturing silicon nitride powder
EP3760581A4 (en) * 2018-02-28 2021-12-01 Tokuyama Corporation METHOD OF MANUFACTURING SILICON NITRIDE POWDER
JP7358331B2 (en) 2018-02-28 2023-10-10 株式会社トクヤマ Method for manufacturing silicon nitride powder
CN109734456A (en) * 2019-03-11 2019-05-10 中国科学院理化技术研究所 A kind of preparation method of porous silicon nitride ceramic
CN114409414A (en) * 2020-10-28 2022-04-29 中国科学院理化技术研究所 A method for preparing high-purity silicon nitride powder using silicon powder with high oxygen content as raw material
CN114409414B (en) * 2020-10-28 2023-04-18 中国科学院理化技术研究所 Method for preparing high-purity silicon nitride powder by taking high-oxygen-content silicon powder as raw material
CN114516752A (en) * 2021-12-23 2022-05-20 内蒙古工业大学 Porous calcium silicate ceramic and ultra-fast preparation method thereof
CN119100803A (en) * 2024-08-30 2024-12-10 天津炜润达新材料科技有限公司 A production process for co-producing titanium nitride and ferrosilicon nitride

Also Published As

Publication number Publication date
CN1307089C (en) 2007-03-28

Similar Documents

Publication Publication Date Title
CN101125653B (en) Combustion method for synthesizing homogeneous nano silicon carbide powder
CN1673070A (en) Method for synthesizing alpha-phase silicon nitride powder by temperature-controlled activation and self-propagating combustion
CN1286713C (en) Method for synthesizing silicon nitride powder by normal pressure combustion
Zhong et al. Synthesis of silicon carbide nanopowder using silica fume
TWI646045B (en) A method for producing the spherical silicon nitride powder
CN101214934A (en) Self-combustion non-pollution fast preparation method for alpha-phase silicon nitride powder
CN110436934A (en) A kind of preparation method of alpha-phase silicon nitride powder, overlength beta-silicon nitride nanowire
CN1264781C (en) Method for synthesizing alpha-phase silicon nitride powder by temperature-controlled combustion
CN108529576B (en) Silicon nitride and preparation method thereof
CN101786624B (en) Method for preparing superfine boron carbide powder by using combustion method
CN100453508C (en) Method for Synthesizing Silicon Nitride/Silicon Carbide Composite Powder by Chemically Inspired Combustion
CN101774809A (en) Method for preparing silicon nitride and silicon carbide compounded powder through self-propagating combustion
CN107285288A (en) The preparation method of nano silicon nitride powders
CN110203894A (en) A method of β-SiAlON is prepared using aluminium lime-ash
CN115072677A (en) High-quality silicon nitride powder synthesis method
CN101734632A (en) Production method of nano silicon nitride powder
CN101229916B (en) Method for synthesizing silicon nitride powder by burning polytetrafluoroethylene as additive
CN109264677A (en) A kind of preparation method of the silicon nitride rich in fiber morphology
CN1296932A (en) Process for preparing aluminium nitride ceramic powder
CN100415641C (en) A method for synthesizing homogeneous silicon nitride powder by layered cloth combustion
CN106892666A (en) A kind of coal gangue combustion synthesizes the method for β SIALON based composite powders
CN103274375A (en) Method for preparing aluminum nitride powder
CN101974782B (en) Method for preparing α-Al2O3 whiskers by carbothermal reduction method
JPH0455142B2 (en)
TWI246997B (en) Manufacturing method of aluminum nitride

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee