CN1667155B - Sputtering device - Google Patents
Sputtering device Download PDFInfo
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- CN1667155B CN1667155B CN2005100527186A CN200510052718A CN1667155B CN 1667155 B CN1667155 B CN 1667155B CN 2005100527186 A CN2005100527186 A CN 2005100527186A CN 200510052718 A CN200510052718 A CN 200510052718A CN 1667155 B CN1667155 B CN 1667155B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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Abstract
本发明的目的在于，提供一种可以减少异常放电和非腐蚀部，并能够形成膜厚分布均匀的膜的成膜装置。本发明的成膜装置(1)具有多个靶(31a～31f)，对不同的靶(31a～31f)施加极性不同的交流电压。当一方的靶(31a～31f)置于负电位时，另一方的靶(31a～31f)置于正电位，并作为阳极起作用，所以，相邻靶(31a～31f)之间不必配置阳极。因相邻的靶(31a～31f)之间什么都不配置，故可以缩短靶(31a～31f)间的距离s，由于在配置了靶(31a～31f)的区域内不放射溅射粒子的面积的比例减小，故溅射粒子均匀地到达衬底(5)，从而使膜厚分布变得均匀。
It is an object of the present invention to provide a film forming apparatus capable of reducing abnormal discharge and non-corrosion portions and forming a film with a uniform film thickness distribution. The film forming apparatus (1) of the present invention has a plurality of targets (31a to 31f), and AC voltages with different polarities are applied to different targets (31a to 31f). When one target (31a-31f) is placed at a negative potential, the other target (31a-31f) is placed at a positive potential and functions as an anode, so there is no need to arrange an anode between adjacent targets (31a-31f) . Since nothing is arranged between the adjacent targets (31a-31f), the distance s between the targets (31a-31f) can be shortened. The ratio of the area is reduced, so the sputtered particles uniformly reach the substrate (5), so that the film thickness distribution becomes uniform.
Description
Technical field
The present invention relates to sputter equipment.
Background technology
The symbol 101 of Fig. 8 illustrates the film deposition system of prior art.
Each target 131a～131e is elongated writing board shape, and under the state of sputter face, is configured in parallel to each other on the substrate 105 that is disposed at vacuum tank 102 inside with certain interval.
Utilize 112 pairs of vacuum tank 102 inside of vacuum evacuating system to carry out vacuum exhaust, simultaneously, import sputter gas from gas supply system 113 to the inside of vacuum tank 102, formed in vacuum tank 102 inside under the state of film forming environment, start the power supply 117a～117e that has connected electrode 135a～135e, if place at vacuum tank 102 and substrate 10-5 under the state of earthing potential each target 131a～131e is applied voltage of alternating current, then the surface of target 131a～131e will be by sputter.
When a plurality of target 131a of while sputter～131e, if only be placed in the shielding slab 111 of earthing potential in the circumferential arrangement of target 131a～131e, then plasma body will be partial to the direction that has disposed shielding slab 111, but, in this film deposition system 101, because of between target 131a～131e also configuration be placed in the shielding slab 111 of earthing potential, so plasma body can secundly, each target 131a～131e can be subjected to uniform sputter.
In a side opposite with the sputter face of target 131a～131e, the magnetic field elongated along the length direction configuration of target 131a～131e forms device 140a～140e.It is narrower than the width of target 131a～131e that magnetic field forms the width of device 140a～140e, utilizes not shown running gear that its end from the width of target 131a～131e is moved around to the other end.
Therefore, form the magnetic field that device 140a～140e forms by magnetic field and also move,, make most of zone of target 131a～131e be subjected to sputter so the part that plasma density is high moves on the surface of target 131a～131e on the surface of target 131a～131e.
In the film deposition system that has used a plurality of targets, because of the quantity of target is many more more can be at very wide zone radiation sputtering particle, so can on large-area substrate 105, carry out film forming.
But existing film deposition system has problem as described below.At first, the 1st, owing to do not radiate sputtering particle, so the part on the shielding slab 111 that is positioned at substrate 105 surfaces and be positioned at part generation film thickness distribution and membranous situation pockety on target 131a～131e from the part at shielding slab 111 places.
In addition, as mentioned above, when magnetic field formation device 140a～140e is moved, when target 131a～131e is applied voltage of alternating current, follow magnetic field to form moving of device 140a～140e, the part that plasma density is high also is moved.
Therefore, when importing reactant gases together when carrying out sputter resemble oxygen with sputter gas, if the high part of plasma density moves, then in the thin part of the plasma density of sputter face, sputter material and reactant gases react and form reactant film (for example oxide film), therefore can produce paradoxical discharge.
If not being moved it, standing field formation device 140a～140e carries out sputter, then the higher part of plasma density does not move, in target 131a～131e the middle body of target 131a～131e width (particularly) produce non-corrosive portion, this non-corrosive reason that can become paradoxical discharge, after perhaps this non-corrosive portion peels off, also can become the reason that produces particle.
[patent documentation 1] special table 2002-508447 communique
[patent documentation 2] spy opens flat 11-241159 communique
[patent documentation 3] spy opens flat 9-13160 communique
Summary of the invention
The present invention proposes in order to solve above-mentioned the problems of the prior art, and its purpose is the film deposition system that wide, the no abnormal discharge of a kind of corrosion region is provided, can forms the uniform film of film thickness distribution.
In order to address the above problem, the 1st aspect of the present invention is a kind of film deposition system, comprise vacuum tank, a plurality of AC power that has the tabular target of length direction and above-mentioned target is applied voltage of alternating current, in above-mentioned a plurality of targets, from same AC power different targets is applied the different voltage of alternating current of polarity, under unidirectional state, the side of length direction that makes adjacent above-mentioned target is via the mutual directly arranged opposite of the atmosphere surrounding in the above-mentioned vacuum tank in sputter face for above-mentioned a plurality of target.
The 2nd aspect of the present invention is the film deposition system of the present invention the 1st aspect record, the distance between the above-mentioned mutual opposed side more than or equal to 1mm smaller or equal to 10mm.
The 3rd aspect of the present invention is the film deposition system of the present invention the 1st aspect or the 2nd aspect record, the frequency of above-mentioned AC power portion more than or equal to 1KHz smaller or equal to 100KHz.
The present invention the 4th aspect is a kind of film deposition system, comprise vacuum tank and a plurality of elongated tabular target that is configured in above-mentioned vacuum tank inside, the configuration that is parallel to each other of above-mentioned each target makes between the side of its length direction opposed mutually, positive behind at above-mentioned each target, length direction along above-mentioned target disposes elongated magnetic field formation device respectively, the outside in the zone that has disposed above-mentioned magnetic field formation device, an and side more outer than the positive behind of above-mentioned target, along the length direction of above-mentioned target, disposed elongated auxiliary magnetic field and formed device.
The 5th aspect of the present invention is the film deposition system of the present invention the 4th aspect record, above-mentioned each magnetic field forms device and has a plurality of magnet, in above-mentioned a plurality of magnet, the magnetic pole towards the face of above-mentioned target side of magnet that forms the device disposed adjacent with above-mentioned auxiliary magnetic field is identical with the pole polarity of the face of the above-mentioned target side that forms device towards above-mentioned auxiliary magnetic field.
The present invention the 6th aspect relates to the film deposition system of the present invention the 4th aspect or the record of the 5th aspect, has to make above-mentioned magnetic field form the running gear that the relative above-mentioned target work with above-mentioned auxiliary magnetic field formation device of device relatively moves.
The present invention constitutes as described above, between adjacent target, neither dispose ground-electrode and do not dispose insulant again, therefore, when vacuum exhaust having been carried out in vacuum tank inside, the lateral opposed area of the length direction of adjacent target also forms vacuum environment, and the width in this vacuum environment district and the distance between the side equate.
Because what all have configuration, the distance between the side may diminish to more than or equal to 1mm smaller or equal to 10mm, so the zone of not radiating sputtering particle narrows down, thereby makes the distribution of the sputtering particle amount of arrival substrate become even.
If make width that magnetic field forms the width of device and target about equally, though then not the shifting magnetic field form device and carry out sputter, also can improve the plasma density of the whole surf zone of target.But, as mentioned above, the interval between target more in short-term, the interval that magnetic field forms between the device also shortens.When making Duo Tai magnetic field form device, destroyed the balance in magnetic field because of the magneticinterference between the adjacent magnetic field formation device mutually near configuration.Especially, when using AC power to carry out sputter,, make thickness, membranous distribution variation, and make the problem of the service efficiency reduction of the target between the paired negative electrode so exist because of the impedance discharge difference between the paired negative electrode (target).
In film deposition system of the present invention, the outside in the zone that has disposed target, be disposed at outermost magnetic field form device near the position have auxiliary magnetic field and form device, magneticinterference in the time of can making near magnetic field formation device because of utilizing this auxiliary magnetic field to form device is tending towards relaxing, so can not destroy the balance of magneticstrength, make the magnetic flux distribution on each target surface become even.
Relatively move when making magnetic field form the relative target of device on one side, when carrying out sputter on one side, magnetic line of force away from the less part of, plasma density not by sputter, formed the reactant (for example oxide compound) with reactant gas on the surface of target, this reactant becomes paradoxical discharge or produces the reason of particle.But, as mentioned above, in the present invention, move carrying out sputter under the target fixed state relatively, so can not cause paradoxical discharge because of making magnetic field form device.
If use film deposition system of the present invention,, also can obtain film thickness distribution and all good film of membranous distribution even large-sized substrate is carried out film forming.In addition, because of not needing the protective sheath parts, so can reduce particle from the protective sheath parts.And then, compare with conventional device, because of head motion that does not need protective sheath parts, magnetic circuit and the mechanism that prevents the abnormity of power supply discharge,, reduce cost so can reduce the number of parts, improve the maintainability of device.
Description of drawings
Fig. 1 is the sectional view of an explanation routine film deposition system of the present invention.
Fig. 2 is the oblique drawing of explanation one routine sputtering source.
Fig. 3 is the sectional view that explanation magnetic field forms device and auxiliary magnetic field formation device.
Fig. 4 is the figure of another example of the annexation of explanation target and AC power.
Fig. 5 is the figure of explanation film thickness distribution.
Fig. 6 be explanation disposed magnetic field when forming device and auxiliary magnetic field and forming device magneticflux-density and the figure of position relation.
Fig. 7 be disposed magnetic field when forming device magneticflux-density and the figure of position relation.
Fig. 8 is the figure of the film deposition system of explanation prior art.
Fig. 9 is the sectional view of explanation the 2nd routine film deposition system of the present invention.
Figure 10 is the sectional view of the state after the original state of (a) the 2nd routine film deposition system of the present invention being described and (b) moving.
Embodiment
The symbol 1 of Fig. 1 illustrates an example of film deposition system of the present invention, and this film deposition system 1 has vacuum tank 2, be configured in the substrate support 4 of vacuum tank 2 inside, be configured in the sputtering source 3 of the position of facing mutually with the substrate support 4 of vacuum tank 2 inside.Sputtering source 3 has a plurality of sputter 30a～30f of portion.Each 30a～30f of sputter portion has tabular target 31a～31f respectively, if with each target 31a～31f by the face of sputter as sputter face, then each 30a～30f of sputter portion is configured to make each sputter face to be positioned on the identical plane.
Each target 31a～31f is the elongated shape with length direction, and each sputter face also is the elongated shape with length direction.Each target 31a～31f is respectively same shape, and the edge section of the length direction of sputter face (side) is spaced from each other the interval of regulation and configured in parallel.
Only separate certain distance between the side of adjacent target 31a～31f, therefore, the parallel sided of adjacent target 31a～31f.The present invention between target 31a～31f neither configured electrodes do not dispose shielding slab yet, the side of target 31a～31f is each other directly face-to-face.
On the back side of each target 31a～31f, be close to the electrode 35a～35f that has with target 31a～31f same widths and equal length is installed, and it is not stretched from the periphery of target 31a～31f.
Exterior arrangement AC power 17a～17c at vacuum tank 2, in two terminals of each AC power 17a～17c, terminal is connected with electrode 35a, 35c, a 35e among adjacent 2 electrode 35a～35f, and another terminal is connected with another electrode 35b, 35d, 35f.
2 different voltages of terminal output positive-negative polarity of each AC power 17a～17c are installed on electrode 35a～35f because of target 31a～31f is close to, so apply the mutually different voltage of alternating current of polarity from AC power 17a～17c to 2 adjacent target 31a～31f.Therefore, among adjacent target 31a～31f, when a side placed positive potential, the opposing party was placed in negative potential.
On the face of the opposite side with target 31a～31f of electrode 35a～35f insulcrete 33a～33f is installed, target 31a～31f and electrode 35a～35f and magnetic field described later form device 40a～40f or miscellaneous part insulation.
On the face of the opposite side of electrode 35a～35f, disposed magnetic field and formed device 40a～40f with target 31a～31f.With reference to Fig. 2, each magnetic field forms periphery elongated ringshaped magnet 42a～42f and the length bar-shaped magnet 43a～43f shorter than ringshaped magnet 42a～42f about equally that device 40a～40f has peripheral dimension and target 31a～31f respectively.
Each ringshaped magnet 42a～42f is configured on the position, positive behind of 1 corresponding target 31a～31f, and parallel with the length direction of target 31a～31f.As mentioned above, the spaced and parallel configuration because of target 31a～31f separates regulation separates the state that disposes with target 31a～31f identical distance so ringshaped magnet 42a～42f becomes.
Bar-shaped magnet 43a～43f is in the ring of ringshaped magnet 42a～42f, along the length direction configuration of target 31a～31f.Therefore, the state of the lateral both sides configuration ringshaped magnet 42a～42f that becomes at bar-shaped magnet 43a～43f length direction.
Form in the magnet of device 40a～40f in magnetic field, if will be configured in the magnet (ringshaped magnet) of both sides as the 1st magnet 42a～42f, to be configured in magnet (bar-shaped magnet) between the 1st magnet 42a～42f as the 2nd magnet 43a～43f, then the magnetic pole of the 1st, the 2nd magnet 42a～42f, 43a～43f is positioned at the two ends of thickness direction, is face side and rear side, if will be towards the face of target 31a～31f one side as the surface, then tabular yoke 41a～41f be close to the back side of the 1st, the 2nd magnet 42a～42f, 43a～43f.
Therefore, the magnetic line of force that produces between the magnetic pole of the 1st, the 2nd magnet 42a～42f, 43a～43f rear side is by the inside of yoke 41a～41f.The periphery of the ring of the planeform of yoke 41a～41f and the 1st magnet 42a～42f equates that the 1st magnet 42a～42f stretches out from the edge of yoke 41a～41f.As mentioned above, because of the shape of the 1st magnet 42a～42f and target 31a～31f about equally, so the planeform that magnetic field forms device 40a～40f also with target 31a～31f about equally.
Here, because of each magnetic field forms on the position of positive behind that device 40a～40f is configured in 1 corresponding target 31a～31f, stretch out from the periphery of target 31a～31f so each magnetic field forms device 40a～40f, it is across 2 target 31a～31f configuration that each magnetic field forms device 40a～40f.
When the polar magnetic of the 1st magnet 42a～42f face side is the N utmost point, then the 2nd magnet 43a～polar magnetic of 43f face side is the S utmost point, as the 1st magnet 42a～when the polar magnetic of 42f face side is the S utmost point, then the polar magnetic of the face side of the 2nd magnet 43a～43f is the N utmost point, therefore, between the surface and the surface of the 2nd magnet 43a～43f of the 1st magnet 42a～42f, form magnetic line of force by electrode 35a～35f.
On position each electrode 35a～35f inside, above the 1st, the 2nd magnet 42a～42f, dispose the magnetic substance 36a～36f that forms by magnetically permeable material (being that purity is 99.8% pure iron) respectively here, magnetic line of force by electrode 35a～35f is attracted to target 31a～31f one side by this magnetic substance 36a～36f, makes it pass through the surface of target 31a～31f.
Each 30a～30f of sputter portion magnetic pole that the 1st magnet 42a～42f polarity is identical that neutralizes is positioned at identical face one side, and therefore, the polarity of target 31a～31f one side of the 1st magnet 42a～42f becomes the N utmost point or the S utmost point entirely.
As mentioned above, the polar polarity of face one side identical with the 1st magnet 42a～42f of cause the 2nd magnet 43a～43f is opposite with the 1st magnet 42a～42f, so when the polarity of target 31a～31f of the 1st magnet 42a～42f one side is the N utmost point entirely, the polarity of target 31a～31f one side of the 2nd magnet 43a～43f becomes the S utmost point entirely, when the polarity of target 31a～31f of the 1st magnet 42a～42f one side was the S utmost point entirely, the polarity of target 31a～31f one side of the 2nd magnet 43a～43f became the N utmost point entirely.
Therefore, between the 1st, the 2nd magnet 42a～42f, the 43a～43f of the same sputter 30a～30f of portion, form magnetic line of force, but between the 1st adjacent magnet 42a～42f of the different 30a～30f of sputter portion, do not form magnetic line of force.
Sputtering source 3 has auxiliary magnetic field and forms device 15a, 15b.Auxiliary magnetic field forms device 15a, 15b and is made of the length elongated bar-shaped magnet about equally of length and the 1st magnet 42a～42f, and is configured in the arrange regional outside of the 1st magnet 42a～42f along the length direction of the 1st magnet 42a～42f.
On auxiliary magnetic field forms device 15a, 15b the is positioned at height identical with the 1st, the 2nd magnet 42a～42f, 43a～43f.The symbol 42a of Fig. 1 and symbol 42f represent to be positioned among the 1st magnet 42a～42f the 1st magnet of the beginning and end of row.Side at 2 length directions of the 1st magnet 42a, the 42f of the beginning and end that is arranged in row, if will be towards the side of the center position of row but will be towards the side of outer direction as end face, then the side of the length direction of this end face and auxiliary magnetic field formation device 15a, 15b be close to or be broken away from.
Fig. 3 is the figure that expression the 1st, the 2nd magnet 42a～42f, 43a～43f and auxiliary magnetic field form an example that concerns between the magnetic pole of device 15a, 15b.The magnetic pole that auxiliary magnetic field forms device 15a, 15b is positioned at the two ends of thickness direction, be face side and rear side, if will towards with the face of surperficial the same side of the 1st, the 2nd magnet 42a～42f, 43a～43f as the surface, then yoke 16a, 16b are close in the back side of auxiliary magnetic field formation device 15a, 15b, therefore, form magnetic line of force that the magnetic pole of device 15a, 15b rear side produces inside from auxiliary magnetic field by yoke 16a, 16b.
The polar magnetic that auxiliary magnetic field forms device 15a, 15b face side is identical with the polar magnetic of the 1st magnet 42a～42f face side.Therefore, when the magnetic pole of the 1st magnet 42a～42f face side is the N utmost point, the polar magnetic that auxiliary magnetic field forms device 15a, 15b face side is exactly the N utmost point, when the polar magnetic of the 1st magnet 42a～42f face side was the S utmost point, the polar magnetic that auxiliary magnetic field forms device 15a, 15b face side was exactly the S utmost point.
As mentioned above, because of auxiliary magnetic field forms device 15a, 15b along being positioned at outermost the 1st magnet 42a, 42f configuration, so auxiliary magnetic field forms device 15a, 15b and is positioned at outermost the 1st magnet 42a, 42f as 1 magnet functions, produce by being positioned at the magnetic line of force of outermost target 31a, 31f between the surface of the surface of this magnet and adjacent the 2nd magnet 43a, 43f.
Here, the end face of the 1st magnet 42a～42f be positioned at certain lateral under, this side is the sides towards outer direction in the side of 2 length directions of target 31a, the 31f at beginning that is arranged in row and end, rather than towards the side of center position of row.
Therefore, auxiliary magnetic field forms device 15a, 15b and is configured in the also outer position, position than the positive behind that is positioned at outermost target 31a, 31f, even the magneticflux-density of the magnetic line of force by being positioned at outermost target 31a, 31f surface can not die down at the end position of this target 31a, 31f yet.
Fig. 6 illustrates that magnetic field forms that device 40a～40e and auxiliary magnetic field form the position of device 15a, 15b and when with 5 30a～30e of sputter portion configuration and the result that the magneticflux-density on target 31a～31e surface measured when being positioned at outermost the 1st magnet 42a, 42e and disposing auxiliary magnetic field formation device 15a, 15b side by side.Have again, the symbol Bv of Fig. 6 and Fig. 7 described later represents the magneticflux-density on the Surface Vertical direction with target 31a～31e, symbol Bh represents the magneticflux-density on the surperficial parallel direction with target 31a～31e, transverse axis represents that the longitudinal axis is represented magneticflux-density (G: Gauss) when the distance of the middle position of the row of 5 target 31a～31e being left central authorities as 0 time.
As shown in Figure 6, magneticflux-density is a trapezium-shaped in the distribution of parallel direction, has (being 3) and 0 point that intersects more than 2 or 2 here in the distribution of vertical direction.By forming the magnetic line of force of such magnetic field shape, can infer:, in sputtering process described later, also can realize the almost whole face of each target 31a～31e is carried out sputter, and can realize almost not having the state of non-corrosive part even magnet shakes.
And then, form device 15a, 15b by the configuration auxiliary magnetic field, even, also can keep magneticstrength with the central part same degree in the end that is positioned at outermost target 31a～31f width.
Corresponding therewith, Fig. 7 is with the figure shown in the position relation of magnetic field formation device 40a～40e the result who when not disposing auxiliary magnetic field formation device 15a, 15b the magneticflux-density on target 31a～31e surface is measured.At this moment magneticflux-density is a trapezium-shaped in the distribution of parallel direction, exist more than 2 or 2 and 0 point that intersects in the distribution of vertical direction, but, 40a～40f is adjacent each other because of magnetic field formation device, so, because magnetic field forms device 40a～40e magneticinterference each other, two ends at target row 31a～31e, the balance of magneticstrength is destroyed, compares with the middle body of sputtering source 3, and magneticflux-density dies down.
Secondly, this film deposition system 1 of use film forming operation on substrate surface is described.Film deposition system 1 has vacuum evacuating system 12 and the gas supply system 13 that is connected with vacuum tank 2 respectively, if utilize 12 pairs of vacuum tank 2 inside of vacuum evacuating system to carry out vacuum exhaust, then also be pumped into vacuum between the mutual opposed side of target 31a～31f, and form vacuum environment in this zone.
The symbol s of Fig. 1 represents the distance between the mutual opposed side of target 31a～31f, in film deposition system 1 of the present invention, between adjacent target 31a～31f, both there be not solids such as configured electrodes or shielding slab, also do not dispose the liquid resemble the water coolant, the side of the length direction of target 31a～31f is only directly opposed via the environment of vacuum tank 2 inside.Therefore, the vacuum zone that between the mutual opposed side of target 31a～31f, forms, it is identical in the length apart from s apart between length on the s direction and the side between the side.
Secondly, when continuing vacuum exhaust, supply with sputter gas and reactant gases together, at the vacuum tank 2 inner film forming environment that form specified pressure from gas supply system 13.In advance substrate 5 is remained on the substrate support 4, substrate 5 and vacuum tank 2 are placed under the state of earthing potential, when being maintained in membrane environment, start AC power 17a～17c.
As mentioned above, when the voltage of alternating current that applies from AC power 17a～17c more than or equal to 1KHz smaller or equal to 100KHz, the side ground potential that connects is placed in positive potential among adjacent 2 target 31a～31f, the opposing party's ground potential that connects is put and is placed in negative potential, so, target 31a～the 31f that is placed in positive potential plays the anodic effect, and the sputter face of target 31a～31f that places negative potential is by sputter, and radiates sputtering particle.
The current potential of target 31a～31f and the frequency of voltage of alternating current switch to negative potential from positive potential accordingly, or switch to positive potential from negative potential, so target 31a～31f is by alternating sputtering, and the result, all target 31a～31f are all by sputter.
If establishing the face of the film that forms substrate 5 is film forming face, it is mutually opposed with the sputter face of each target 31a～31f that then substrate 5 is configured to make film forming face, so, arrive the surface of substrate 5 from the sputtering particle of sputter face radiation, react the film that constitutes by the reactant of target material and reactant gases in the surface growth of substrate 5 with reactant gases on substrate 5 surface.
As mentioned above, because of what does not dispose between adjacent target 31a～31f, being reduced to more than or equal to 1mm smaller or equal to 10mm apart from s between the mutual opposed side of target 31a～31f, so this is more little apart from s, the ratio of area of not radiating sputtering particle is more little.Therefore, sputtering particle arrives the surface of substrate 5 equably, the result, and the film thickness distribution of the film that substrate 5 surfaces form is more even.
Have, this film deposition system 1 has the shielding slab 11 as baffle plate again, shielding slab 11 be configured to arranging target 31a～31f the zone around and auxiliary magnetic field form device 15a, 15b and surround, the part outside the sputter face is not exposed from shielding slab 11.Therefore, electrode 35a～35f or magnetic field form device 40a～40f and utilize this shielding slab 11 to be shielded by sputtering particle, so, can not adhere to sputtering particle.
[embodiment]
＜embodiment 〉
Use above-mentioned film deposition system 1, under situation about not heating, the glass substrate 5 of wide 1100mm, long 1250mm, thick 0.7mm is carried out the sputter in 30 seconds, form ITO (indium tin oxide) film of thickness 1000 dusts (100nm) on the surface of substrate 5.
Here, use 6 by In
2O
2-10wt%SnO
2(ITO) target 31a～31f of formation, wide 200mm, long 1700mm, thick 10mm, each target 31a～31f are configured to parallel with the width of substrate 5 and are 2mm apart from s.The width that magnetic field forms device 40a～40f is identical with target 31a～31f, is 200mm.Supply with the Ar gas of 200sccm from gas supply system 13, simultaneously, go back supply response gas (H as sputter gas
2O, O
2), in order to control optimum flow, each flow rate of reactive gas is changed between 0sccm～5sccm, form the film forming gas environment of 0.7Pa.Apply voltage of alternating current output is risen gradually from 0kw, finally reach 20kw.The frequency of voltage of alternating current is 50KHz.
The thickness of the ITO film after measuring film forming on 35 points.This measurement result is shown in Figure 5.
As shown in Figure 5, the deviation of the thickness in 5 of the substrates is less, measures film thickness distribution to have obtained ± 8% value preferably on 35 points.Hence one can see that, less in the deviation of sputter ionic medium body.In addition, can't see paradoxical discharge during sputter, discharge stability almost be can't see the particle in the film of sneaking into after the film forming.
In addition, as reactant gases, do not use O
2Gas only uses H
2O gas is except making H
2The flow of O gas at 0sccm outside change between the 5sccm, under the condition identical, carry out film forming with the foregoing description, form the ITO film, measure the sheet resistance (Ω/) and carry out the sheet resistance (Ω/) of heat treated (anneal) after the film forming again of the ITO film after the film forming just respectively, after firm film forming, even change gas flow, sheet resistance are also constant, and resistance value is higher.Under the annealed situation, to compare with the situation after the firm film forming, the thin-film electro resistance is lower, particularly works as H
2When the flow of O gas was 2sccm, the thin-film electro resistance was minimum.
And then, use O
2Gas and H
2O gas is as reactant gases, with H
2The flow of O gas is fixed on 2sccm, and makes O
2The flow of gas changes the film forming of carrying out the ITO film between 0 to 2.0sccm, measure after the firm film forming respectively and anneal after sheet resistance (Ω/), the result, lower after the anneal than the sheet resistance after the firm film forming, particularly work as O
2When the flow of gas was 1.0sccm, the thin-film electro resistance was minimum.Therefore, the optimum flow of reactant gases is as can be known: H
2O gas is 2sccm, O
2Gas is 1sccm.
And then, be under the situation of optimum flow in flow rate of reactive gas, ask the sheet resistance of ITO film to distribute, result, the maximum value of sheet resistance are 26.8 Ω/, and minimum value is 23.4 Ω/, and mean value is 25.1 Ω/, and sheet resistance is distributed as ± and 6.7%.Hence one can see that, if use film deposition system 1 of the present invention, can obtain the well-distributed I TO of sheet resistance film, the shape or the configuration-independent of this sheet resistance distribution and target.
And then even use film deposition system 1 of the present invention to carry out long-time film forming, it is also very stable to discharge, and can't see paradoxical discharge.After the discharge, the surface of ITO target 31a～31f is confirmed, be can't see non-corrosive district on the surface of target 31a～31f.
＜comparative example 〉
As film deposition system, the magnetic field that becomes above-mentioned film deposition system 1 forms device 40a～40f, and the configuration width is controlled it from the outside than the bar-shaped magnet of target 31a～31f narrow (130mm is wide), make its width shake 80mm, and the magnetic field on target surface is changed in time at target.The speed of shaking of carrying out bar-shaped magnet is that the constant speed of 10mm/sec is oppositely controlled.
More than, illustrated from identical AC power 17a～17c adjacent target 31a～31b is applied the situation of voltage of alternating current, but the invention is not restricted to this.Also can apply voltage of alternating current from identical AC power 17a～17c to 2 non-conterminous and different target 31a～31f as shown in Figure 4.At this moment, also preferably adjacent target 31a～31f is applied voltage, make it alternately place the different current potential of polarity.
More than the nesa coating that is formed by ITO is illustrated, but the present invention is not particularly limited to this, plasma display) or FED (Field Emission Display: field-emitter display) or EL (Electro Luminescence: the manufacturing of flat-panel monitor such as electroluminescent) can carry out film forming to various films such as metallic film, nesa coating, dielectric films, and be applied to liquid crystal, PDP (Plasma display panel:.
The substrate 5 that the present invention is used is not particularly limited, and can use various substrates such as the substrate of glass substrate, tape tree adipose membrane or resin substrates.If according to the present invention, by using a plurality of target 31a～31f, because of the film forming area strengthens, so can be not less than 1m at the area of planeform
2The surface of large-sized substrate form film.
Be configured in the vacuum tank identical 2 when inner when magnetic field being formed device 40a～40f with target 31a～31f, preferably to the surface of magnet 42a～42f, 43a～43f and iron 41a～41f in distress implement not can to the membranous material that exerts an influence behind the spatter film forming, surface treatment and with the adhering method of yoke material.And then, owing to be in the atmosphere surrounding same with discharge space, so preferably utilize nonmagnetic material and not can to behind the spatter film forming membranous that exert an influence, carry out the surface-treated material, space between the S utmost point and the N utmost point is full of, makes the S utmost point of magnetic field formation device 40a～40f and the space between the N utmost point not produce plasma body.
More than, illustrated that magnetic substance 36a～36f is configured in the situation of electrode 35a～35f inside, but the present invention is not limited to this, if form the magnetic line of force of magnetic field shape shown in Figure 6, then magnetic substance 36a～36f can for example do not disposed, in addition yet, when configuration magnetic substance 36a～36f, its position is also had no particular limits, for example, magnetic substance 36a～36f can be configured in the yoke 41a～41f identical with the 1st, the 2nd magnet 42a～42f, 43a～43f above.
In addition, if form the magnetic line of force of above-mentioned magnetic field shape shown in Figure 6, then shape, configuration or the number to the 1st, the 2nd magnet 42a～42f, 43a～43f all has no particular limits.
The length of each target 31a～31f is more than or equal to the length of film forming substrate, for example more than or equal to 1500mm smaller or equal to 2000mm.In addition, the width of each target 31a～31f for example more than or equal to 100mm smaller or equal to 400mm.
The number of target for example be satisfy target number * target wide+target number * target between the profile W of the represented negative electrode of distance more than or equal to the number of substrate width, for example be the number of 1200mm≤W≤1900mm of satisfying condition.
The mutual opposed lateral of adjacent target 31a～31f for example is smaller or equal to 10mm more than or equal to 1mm apart from s.Distance from the sputter face of target 31a～31f to the film forming face of substrate 5 for example is smaller or equal to 300mm more than or equal to 60mm.
The sputter face of target 31a～31f preferably disposes at grade.Thickness to target 31a～31f is not particularly limited, for example more than or equal to 5mm smaller or equal to 30mm.
If counter electrode 35a～35f installs refrigerating unit, on one side then can carry out sputter by one side cooled target 31a～31f.Thickness to electrode 35a～35f that target 31a～31f is installed is not particularly limited, for example more than or equal to 5mm smaller or equal to 30mm.
Make target 31a～31f and electrode 35a～35f and magnetic field form device 40a～40f electrical isolation insulcrete 33a～33f thickness for example more than or equal to 2mm smaller or equal to 10mm.
In addition, in vacuum tank 2 inside, along the length direction configuration gas pipeline of target 31a～31f, if utilize this gas pipeline that sputter gas or reactant gases are flowed out between adjacent target 31a～31f, then because to the direct air feed of discharge space, so air feed speed is difficult to descend.At this moment, if around side of substrate, venting port is set, the gas that supplies to discharge space is discharged rapidly.
About the electric power of supplying with to target 31a～31f, its output density P to 2 target 31a～31f being connected 1 AC power 17a～17c for example is more than or equal to 1W/cm
2And smaller or equal to 10W/cm
2In addition, when using metallic target 31a～31f, output density P for example is more than or equal to 5W/cm
2And smaller or equal to 40W/cm
2
In addition, about the electric power of supplying with to target 31a～31f, in order to adjust the film thickness distribution on the substrate, in a plurality of target 31a～31f arranged side by side, the feed rate that is supplied in outermost target 31a, 31f be supplied in middle position target 31c, 31d feed rate 100%～130%.
In addition, when sputter, the voltage that imposes on target 31a～31f for example is the voltage of alternating current of ground potential more than or equal to-3000V that connect.
More than, illustrated by 1 elongated magnet and constituted the situation that 1 auxiliary magnetic field forms device 15a, 15b, but the present invention is not limited to this, also can constitute 1 auxiliary magnetic field and form device, make each magnet be configured in the outside, zone that has disposed magnetic field formation device along the length direction of target by a plurality of magnet.In addition, when auxiliary magnetic field form device 15a, 15b and adjacent the 1st magnet 42a, when 42f is close to, also can be integrally formed with these magnet.
In above-mentioned film deposition system 1, even the shifting magnetic field does not form device 40a～40b and auxiliary magnetic field formation device 15a, 15b and continues sputter, also can carry out sputter to the almost whole face of target 31a～31f, if but the magneticflux-density on target 31a～31f surface is inhomogeneous, then in the higher part of magneticflux-density and lower part owing to sputter produces the poor of thickness decrease.
Fig. 9 has been depicted as the of the present invention the 2nd routine film deposition system that addresses this problem.This film deposition system 7 has the entire infrastructure of the above-mentioned film deposition system 1 except that magnetic substance 36a～36f.Film deposition system 7 and then have running gear 14, each magnetic field form device 40a～40f and each auxiliary magnetic field and form device 15a, 15b and be connected with running gear 14, and mobile together with running gear 14.
Running gear 14 constitutes and utilizes not shown motor, in the face parallel with target 31a～31f surface, its relative target 31a～31f is relatively moved, so each magnetic field forms device 40a～40f and each auxiliary magnetic field formation device 15a, 15b also move in the face that is parallel to target 31a～31f surface.
Therefore, the plane of target 31a～31f and magnetic field form the planar of device 40a～40f apart from constant.In addition, each magnetic field forms that device 40a～40f and each auxiliary magnetic field formation device 15a, 15b are fixed on the identical running gear 14 and is static with respect to running gear 14, so the relative position relation that each magnetic field forms device 40a～40f and each auxiliary magnetic field formation device 15a, 15b is constant.Therefore, the shape invariance of the lip-deep magneticflux-density of target 31a～31f, but the relative position relation on the shape of magneticflux-density and target 31a～31f surface changes.
Here, the travel direction of running gear 14 is along target 31a～31f direction side by side, and therefore, magnetic field forms device 40a～40f and auxiliary magnetic field formation device 15a, 15b move along target 31a～31f direction side by side.
Figure 10 (a) illustrates magnetic field and forms the original state that device 40a～40f is configured in the position, positive behind of corresponding target 31a～31f, when running gear 14 moves, shown in Figure 10 (b), become magnetic field and form the position, positive behind that device 40a～40b departs from corresponding target 31a～31f, the target 31a at row beginning and end, the end of 31f forms the state that stretches out the row of device 40a～40f from magnetic field, but by moving, thereby make auxiliary magnetic field form device 15a, 15b is near the position under its end, the result, on the surface of each target 31a～31f, pass through from the end to end magnetic line of force of travel direction.
Secondly, illustrate that this film deposition system 7 of use carries out film forming operation.
During substrate 5 after the film forming end and new substrate 5 are exchanged, making magnetic field form device 40a～40f and auxiliary magnetic field forms device 15a, 15b and moves one towards the position, positive behind of the target 31a～31f adjacent with above-mentioned corresponding target 31a～31f and do not make magnetic field form the amount of movement D that device 40a～40f enters, when carrying out film forming, make magnetic field form device 40a～40f and auxiliary magnetic field and form that device 15a, the relative target 31a～31f of 15b are static to carry out sputter on the surface of new substrate 5.
When the relative position relation on magnetic field shape and target 31a～31f surface changes, because of the higher part of the lip-deep magneticflux-density of target 31a～31f is moved, so it is more to the less part sputter of the thickness decrease of target 31a～31f, on the contrary, less to the part sputter that the thickness decrease is more.
If the shifting magnetic field forms the sputter that device 40a～40f and auxiliary magnetic field form device 15a, 15b and carry out target 31a～31f repeatedly repeatedly, then the uniform film thickness because of target 31a～31f surface reduces, so the service efficiency of target 31a～31f is higher.
Have again, in the film deposition system 1 of Fig. 1, by target 31a～31f is disposed magnetic substance 36a～36f, thereby the magneticflux-density on target 31a～31f surface is even, and the thickness of target 31a～31f reduces to become evenly, but in the film deposition system 7 of the 2nd example, even without magnetic substance 36a～36f, form device 40a～40f and auxiliary magnetic field formation device 15a, 15f by the shifting magnetic field, the result also can make the thickness decrease of target 31a～31f become even.
More than, illustrated and made magnetic field formation device 40a～40f and auxiliary magnetic field form the situation that device 15a, 15b move together, but the present invention is not limited to this, when target 31a～31f is carried out sputter, if each magnetic field forms device 40a～40f and each auxiliary magnetic field formation device 15a, 15b do not change relative position relation each other, and the relative position relation of change and target 31a～31f then also can move each magnetic field respectively and form device 40a～40f and each auxiliary magnetic field formation device 15a, 15b.
In addition, it is static also can to make magnetic field formation device 40a～40f and auxiliary magnetic field form device 15a, 15b, and running target 31a～31f, also can make magnetic field form device 40a～40f and auxiliary magnetic field forms device 15a, 15b moves and do not change its relative position relation each other, simultaneously, target 31a～31f is moved.
Claims (5)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP69413/04 | 2004-03-11 | ||
| JP69413/2004 | 2004-03-11 | ||
| JP2004069413 | 2004-03-11 | ||
| JP40668/2005 | 2005-02-17 | ||
| JP40668/05 | 2005-02-17 | ||
| JP2005040668A JP4780972B2 (en) | 2004-03-11 | 2005-02-17 | Sputtering equipment |
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| Publication Number | Publication Date |
|---|---|
| CN1667155A CN1667155A (en) | 2005-09-14 |
| CN1667155B true CN1667155B (en) | 2010-05-26 |
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|---|---|---|---|
| CN2005100527186A Expired - Lifetime CN1667155B (en) | 2004-03-11 | 2005-03-10 | Sputtering device |
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| Country | Link |
|---|---|
| JP (1) | JP4780972B2 (en) |
| KR (1) | KR101164047B1 (en) |
| CN (1) | CN1667155B (en) |
| TW (1) | TWI375729B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4320019B2 (en) * | 2006-01-11 | 2009-08-26 | 株式会社アルバック | Sputtering equipment |
| JP4963023B2 (en) * | 2006-01-11 | 2012-06-27 | 株式会社アルバック | Sputtering method and sputtering apparatus |
| US8460522B2 (en) | 2006-10-24 | 2013-06-11 | Ulvac, Inc. | Method of forming thin film and apparatus for forming thin film |
| JP4707693B2 (en) * | 2007-05-01 | 2011-06-22 | 株式会社アルバック | Sputtering apparatus and sputtering method |
| JP5186152B2 (en) * | 2007-08-10 | 2013-04-17 | 株式会社アルバック | Thin film formation method |
| CN101784694B (en) * | 2007-08-20 | 2012-08-29 | 株式会社爱发科 | Sputtering method |
| US20110180394A1 (en) * | 2007-08-20 | 2011-07-28 | Tatsunori Isobe | Sputtering method and sputtering apparatus |
| JP5291907B2 (en) * | 2007-08-31 | 2013-09-18 | 株式会社アルバック | Sputtering equipment |
| JP5429771B2 (en) | 2008-05-26 | 2014-02-26 | 株式会社アルバック | Sputtering method |
| JP5429772B2 (en) | 2008-06-30 | 2014-02-26 | 株式会社アルバック | Power supply |
| WO2010090197A1 (en) * | 2009-02-04 | 2010-08-12 | シャープ株式会社 | Object coated with transparent conductive film and process for producing same |
| JP5363166B2 (en) * | 2009-03-31 | 2013-12-11 | 株式会社アルバック | Sputtering method |
| KR20130041105A (en) * | 2010-06-17 | 2013-04-24 | 울박, 인크 | Sputtering film forming device, and adhesion preventing member |
| CN102312206B (en) * | 2010-06-29 | 2015-07-15 | 株式会社爱发科 | Sputtering method |
| JP5189674B2 (en) | 2010-12-28 | 2013-04-24 | 出光興産株式会社 | Laminated structure having oxide semiconductor thin film layer, method for producing laminated structure, thin film transistor, and display device |
| JP5653257B2 (en) * | 2011-03-07 | 2015-01-14 | 株式会社アルバック | Sputtering apparatus and sputtering method |
| US20150021166A1 (en) * | 2011-08-25 | 2015-01-22 | Applied Materials, Inc. | Sputtering apparatus and method |
| JP5301021B2 (en) * | 2011-09-06 | 2013-09-25 | 出光興産株式会社 | Sputtering target |
| CN102677008B (en) * | 2012-05-14 | 2014-02-19 | 深圳市创益科技发展有限公司 | Online preparation device of coating of electric conduction electrode of solar battery |
| WO2014080815A1 (en) * | 2012-11-20 | 2014-05-30 | 株式会社 アルバック | Sputtering apparatus |
| TWI632123B (en) * | 2013-01-16 | 2018-08-11 | Idemitsu Kosan Co., Ltd. | Sputtering target, oxide semiconductor thin film, and thin film transistor provided with the oxide semiconductor thin film |
| CN103184422B (en) * | 2013-03-25 | 2015-07-22 | 肇庆市腾胜真空技术工程有限公司 | Low-temperature deposition device and process for TCO film |
| JP2014218706A (en) * | 2013-05-09 | 2014-11-20 | 出光興産株式会社 | Sputtering target, oxide semiconductor thin film, and manufacturing method of them |
| WO2016017510A1 (en) * | 2014-07-31 | 2016-02-04 | 株式会社 アルバック | Substrate processing device |
| WO2019003809A1 (en) * | 2017-06-30 | 2019-01-03 | 凸版印刷株式会社 | Film treatment method and film production method |
| KR102053400B1 (en) * | 2017-07-07 | 2020-01-07 | 주식회사 에이치앤이루자 | Sputtering device including magnetic flux block |
| CN109487225A (en) * | 2019-01-07 | 2019-03-19 | 成都中电熊猫显示科技有限公司 | Magnetron sputtering film formation device and method |
| CN114318269B (en) * | 2022-01-05 | 2022-10-28 | 中国科学院兰州化学物理研究所 | Device and method for sputtering and depositing metal on surface of magnetic powder material |
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| CN1119552A (en) * | 1994-07-20 | 1996-04-03 | 松下电器产业株式会社 | sputtering device |
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| JPH0610347B2 (en) * | 1985-05-23 | 1994-02-09 | 日本電気株式会社 | Tripolar spatling source |
| JPH02156080A (en) * | 1988-12-09 | 1990-06-15 | Tokuda Seisakusho Ltd | sputtering equipment |
| JP3269834B2 (en) * | 1991-11-26 | 2002-04-02 | 旭硝子株式会社 | Sputtering apparatus and sputtering method |
| JP4592852B2 (en) * | 1999-11-12 | 2010-12-08 | キヤノンアネルバ株式会社 | Magnetron cathode of sputtering equipment |
| JP2001262335A (en) * | 2000-03-21 | 2001-09-26 | Nippon Sheet Glass Co Ltd | Film coating method |
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2005
- 2005-02-17 JP JP2005040668A patent/JP4780972B2/en not_active Expired - Lifetime
- 2005-02-22 TW TW094105312A patent/TWI375729B/en not_active IP Right Cessation
- 2005-03-10 KR KR1020050020100A patent/KR101164047B1/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1119552A (en) * | 1994-07-20 | 1996-04-03 | 松下电器产业株式会社 | sputtering device |
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| JP特开平7-18435A 1995.01.20 |
| JP特表2002-508447A 2002.03.19 |
Also Published As
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| CN1667155A (en) | 2005-09-14 |
| KR20060043832A (en) | 2006-05-15 |
| JP4780972B2 (en) | 2011-09-28 |
| KR101164047B1 (en) | 2012-07-18 |
| TWI375729B (en) | 2012-11-01 |
| TW200538568A (en) | 2005-12-01 |
| JP2005290550A (en) | 2005-10-20 |
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