CN1652360A - white light emitting diode - Google Patents
white light emitting diode Download PDFInfo
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- CN1652360A CN1652360A CNA2004100048492A CN200410004849A CN1652360A CN 1652360 A CN1652360 A CN 1652360A CN A2004100048492 A CNA2004100048492 A CN A2004100048492A CN 200410004849 A CN200410004849 A CN 200410004849A CN 1652360 A CN1652360 A CN 1652360A
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- Prior art keywords
- emitting diode
- light emitting
- white light
- sio
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- 239000000463 material Substances 0.000 claims abstract description 87
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 49
- 230000005284 excitation Effects 0.000 claims abstract description 42
- 239000000843 powder Substances 0.000 claims abstract description 39
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 33
- 229910052788 barium Inorganic materials 0.000 claims abstract description 28
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052737 gold Inorganic materials 0.000 claims description 38
- 239000011651 chromium Substances 0.000 claims description 26
- 229910052727 yttrium Inorganic materials 0.000 claims description 25
- 239000011575 calcium Substances 0.000 claims description 21
- 229910020068 MgAl Inorganic materials 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 229910052748 manganese Inorganic materials 0.000 claims description 13
- 229910052749 magnesium Inorganic materials 0.000 claims description 12
- 229910000943 NiAl Inorganic materials 0.000 claims description 11
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims description 11
- 229910003668 SrAl Inorganic materials 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052779 Neodymium Inorganic materials 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 5
- 229910052691 Erbium Inorganic materials 0.000 claims description 5
- 229910052693 Europium Inorganic materials 0.000 claims description 5
- 229910052689 Holmium Inorganic materials 0.000 claims description 5
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 5
- 229910052772 Samarium Inorganic materials 0.000 claims description 5
- 229910052775 Thulium Inorganic materials 0.000 claims description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 5
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 5
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 5
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 5
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 5
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 5
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical group [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052701 rubidium Inorganic materials 0.000 claims description 5
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 5
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910010421 TiNx Inorganic materials 0.000 claims 6
- 229910052726 zirconium Inorganic materials 0.000 claims 6
- 239000002019 doping agent Substances 0.000 claims 4
- 229910052765 Lutetium Inorganic materials 0.000 claims 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims 3
- 239000000565 sealant Substances 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims 1
- 229910006404 SnO 2 Inorganic materials 0.000 claims 1
- 239000008393 encapsulating agent Substances 0.000 claims 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 238000009877 rendering Methods 0.000 abstract description 8
- COHDHYZHOPQOFD-UHFFFAOYSA-N arsenic pentoxide Chemical compound O=[As](=O)O[As](=O)=O COHDHYZHOPQOFD-UHFFFAOYSA-N 0.000 abstract 2
- 229910003669 SrAl2O4 Inorganic materials 0.000 abstract 1
- 239000005084 Strontium aluminate Substances 0.000 abstract 1
- 229910052909 inorganic silicate Inorganic materials 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 238000007789 sealing Methods 0.000 description 10
- 238000000295 emission spectrum Methods 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- -1 gallium nitride compound Chemical class 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000000904 thermoluminescence Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Luminescent Compositions (AREA)
Abstract
A white light LED at least comprises an excitation light source and a fluorescent powder, wherein the excitation light source can emit light with a wavelength of 250nm to 490nm, and the fluorescent powder is arranged on the excitation light sourceAnd the periphery of the light source is used for receiving the light emitted by the excitation light source. The material of the phosphor is selected from (Tb)3－x－yCexRey)Al5O12，(Me1－x－yEuxRey) 3SiO5，YBO3∶Ce3+，YBO3∶Tb3+，SrGa2O4∶Eu2+，SrAl2O4∶Eu2+，(Ba，Sr)MgAl10O17∶Eu2+，Mn2+，Y2O3∶Eu3+，Y2O3∶Bi3+，(Y，Gd) 2O3∶Eu3+，(Y，Gd) 2O3∶Bi3+，Y2O2S∶Eu3+，Y2O2S∶Bi3+，(Me1－xEux)ReS，6MgO，As2O5∶Mn，Mg3SiO4∶Mn，BaMgAl10O17∶Eu2+And (Ca, Sr, Ba) 5 (PO4) 3Cl∶Eu2+，Gd3+One of the groups consisting of. The white light emitting diode has high luminous efficiency and good color rendering property.
Description
Technical field
The invention relates to a kind of white light emitting diode, and particularly relevant for a kind of white light emitting diode that can send three to four kinds of wavelength.
Background technology
Light-emitting diode (LED) belongs to semiconductor element, the material of its luminescent wafer mainly uses III-V family chemical element, as: gallium phosphide (GaP), GaAs (GaAs), gallium nitride compound semiconductors such as (GaN), its principle of luminosity is to convert electrical energy into light, just compound semiconductor is applied electric current, see through combining of electronics and electric hole, the energy of surplus is disengaged with the form of light, and reach luminous effect.Because the luminescence phenomenon of light-emitting diode is not by by adding thermoluminescence or Discharge illuminating, but it is luminous to belong to cold property, thus the life-span of light-emitting diode reach more than 100,000 hours, and need not warm up the lamp time (idling time).In addition, light-emitting diode has reaction speed and (is about 10 soon
-9Second), volume is little, power-saving, pollute low (not containing mercury), high-reliability, be fit to advantages such as volume production, so its applicable field of institute is very extensive, wherein the most noticeable, surely belongs to white light emitting diode.Especially in recent years because the luminous efficiency of light-emitting diode constantly promotes, make white light emitting diode on some application, as the lamp source of scanner, the backlight of liquid crystal screen, or lighting apparatus etc., the existing trend that replaces traditional fluorescent lamp and white heat bulb gradually.Existing white light emitting diode mainly comprises following two types:
One, comprises a plurality of single color LED wafers, and by producing white light by the electric current of adjusting by each single color LED wafer, the white light emitting diode that wherein can be divided into the three-wavelength type that uses ruddiness, blue light and green light LED wafer simultaneously again, and the white light emitting diode that uses two wave length types of gold-tinted and blue light-emitting diode wafer.The luminous efficiency of this kind method is higher, but because need use a plurality of single color LED wafers simultaneously, so cost of manufacture is higher.
Two, with blue light-emitting diode wafer collocation-yellow inorganic fluorescent powder (or yellow organic fluorescent dye), to produce white light.Wherein, the blue light wavelength that the blue light-emitting diode wafer is sent is between 440nm and 490nm, and yellow inorganic fluorescent powder is subjected to after the blue light illumination, can send yellow fluorescence, and behind yellow fluorescence and original blue light mixed light, just can obtain required white light.This kind white light emitting diode more above-mentioned first kind of white light emitting diode on making is easy, and production cost is also lower, and therefore on the market white light emitting diode is this kind form mostly at present.Yet because the luminous efficiency of this kind white light emitting diode is lower, and it is the white light emitting diode of two wave length types (only carrying out mixed light by blue light and gold-tinted), therefore at color rendering and show on the colour temperature white light emitting diode not as other three-wavelength types.
Summary of the invention
In view of this, the objective of the invention is, so that higher luminous efficiency and preferable color rendering to be provided at the white light emitting diode that a kind of three to four wave length types are provided.
Based on above-mentioned purpose, the present invention proposes a kind of white light emitting diode, at least comprise an excitation source, a carrier, a sealing and a fluorescent material, wherein a surface of carrier has a depression, and excitation source is to be disposed in the depression of carrier, and electrically connect with carrier, and excitation source is to send a light, and the wavelength of light is between between the 250nm to 490nm.Sealing is to be disposed on the carrier, and sealing covering excitation source, so that excitation source is bonded on the carrier.In addition, fluorescent material is to be disposed at around the excitation source, and with the reception light that excitation source was sent, and the material of fluorescent material is to be selected from (Tb
3-x-yCe
xRe
y) Al
5O
12, (Me
1-x-yEu
xRe
y)
3SiO
5, YBO
3: Ce
3+, YBO
3: Tb
3+, SrGa
2O
4: Eu
2+, SrAl
2O
4: Eu
2+, (Ba, Sr) MgAl
10O
17: Eu
2+, (Ba, Sr) MgAl
10O
17: Mn
2+, Y
2O
3: Eu
3+, Y
2O
3: Bi
3+, (Y, Gd)
2O
3: Eu
3+, (Y, Gd)
2O
3: Bi
3+, Y
2O
2S:Eu
3+, Y
2O
2S:Bi
3+, (Me
1-xEu
x) ReS, 6MgO, As
2O
5: Mn, Mg
3SiO
4: Mn, BaMgAl
10O
17: Eu
2+, and (Ca, Sr, Ba)
5(PO
4)
3Cl:Eu
2+, Gd
3+. the group that is formed one of them.
In preferred embodiment of the present invention, above-mentioned white light emitting diode for example more comprises a plurality of bonding wires, and it is to be electrically connected between excitation source and the carrier.In addition, carrier for example can be encapsulation foot rest or circuit substrate, and excitation source for example can be LED wafer or laser diode wafer etc.
In preferred embodiment of the present invention, the wavelength of the light that the visual excitation source of material of above-mentioned fluorescent material is sent adjusts, wherein for example when the wavelength of light between between the 440nm to 490nm the time, the material of fluorescent material is to be selected from (Tb
3-x-yCe
xRe
y) Al
5O
12, (Me
1-x-yEu
xRe
y)
3SiO
5, Y
2O
3: Eu
3+, Y
2O
3: Bi
3+, (Y, Gd)
2O
3: Eu
3+, (Y, Gd)
2O
3: Bi
3+, Y
2O
2S:Eu
3+, Y
2O
2S:Bi
3+, (Me
1-xEu
x) ReS, and 6MgO, As
2O
5: Mn, Mg
3SiO
4: Mn, the group that is formed one of them.In addition, for example when the wavelength of the wavelength of light between between the 250nm to 440nm the time, the material of fluorescent material is to be selected from (Tb
3-x-yCe
xRe
y) Al
5O
12, (Me
1-x-yEu
xRe
y)
3SiO
5, YBO
3: Ce
3+, YBO
3: Tb
3+, SrGa
2O
4: Eu
2+, SrAl
2O
4: Eu
2+, (Ba, Sr) MgAl
10O
17: Eu
2+, (Ba, Sr) MgAl
10O
17: Mn
2+, Y
2O
3: Eu
3+, Y
2O
3: Bi
3+, (Y, Gd)
2O
3: Eu
3+, (Y, Gd)
2O
3: Bi
3+, Y
2O
2S:Eu
3+, Y
2O
2S:Bi
3+, (Me
1-xEu
x) ReS, 6MgO, As
2O
5: Mn, Mg
3SiO
4: Mn, BaMgAl
10O
17: Eu
2+, and (Ca, Sr, Ba)
5(PO
4)
3Cl:Eu
2+, Gd
3+. the group that is formed one of them.
(Me in the material of above-mentioned fluorescent material
1-x-yEu
xRe
y)
3SiO
5, 0＜x≤0.8, and 0≤y≤2.0.In addition, Me be selected from group that calcium, strontium, barium forms one of them, and Re be selected from group that praseodymium, rubidium, samarium, dysprosium, holmium, yttrium, erbium, europium, thulium, ytterbium, chromium, strontium, gold-plating, gadolinium, zinc, aluminium form one of them.
In addition, the present invention more adopts a kind of LED wafer, be to send a wavelength between the light between 250nm to 490nm, and this LED wafer is suitable for the excitation source as above-mentioned white light emitting diode.LED wafer for example comprises a substrate, a crystal nucleation layer, a conductive buffer layer, one first bond course, a luminescent layer, one second bond course, a contact layer, an anode electrode and a cathode electrode.Wherein, crystal nucleation layer and conductive buffer layer can be positioned on the substrate in regular turn.First bond course (following bond course) position is on conductive buffer layer, and wherein the alloy of the alloy of first bond course and conductive buffer layer is a homotype, as P type or N type alloy.Luminescent layer, position are on first bond course, and second bond course (go up bond course) position is on luminescent layer, and the alloy of the alloy of second bond course and first bond course is a different shaped.Contact layer is that the position is on second bond course, and contact layer changes the semi-conducting material of (periodic) and tool modulation doping (modulated doped) for the tool cycle, P type superlattice strained layer (strained layersuperlattices, SLS) material structure or for example the N type superlattice strained layer of doped silicon, germanium, antimony, tin, phosphorus, arsenic of for example magnesium-doped, zinc, beryllium, cadmium, calcium, carbon.Anode electrode be the position on contact layer, and cathode electrode is contact with conductive buffer layer, and with first bond course, second bond course, luminescent layer, contact layer and anode electrode isolation.
In above-mentioned LED wafer, the conductivity type of second bond course and the conductivity type of contact layer can be different shaped; That is the conductivity type of contact layer can be P type or N type.Moreover the conductivity type of anode electrode and contact layer can also be different shaped; That is the conductivity type of anode electrode can be P type or N type.
Based on above-mentioned, white light emitting diode of the present invention is to be that the LED wafer (or laser diode wafer) of 250nm to 490nm is as excitation source with the emission wavelength, and the fluorescent material of collocation unlike material, to produce for example fluorescence of different colours such as yellow, redness, green and blueness, and carry out mixed light, and form a white light with exciting light that original excitation source is sent.White light emitting diode of the present invention is the white light emitting diode for three to four wave length types, and it can have higher luminous efficiency and preferable color rendering.
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 illustrates the schematic diagram into a kind of white light emitting diode of preferred embodiment of the present invention;
Fig. 2 illustrates the schematic diagram into a kind of white light emitting diode of preferred embodiment of the present invention;
Fig. 3 illustrates the profile of a kind of LED wafer that adopts for the present invention;
Fig. 4 illustrates the emission spectrum into a kind of white light emitting diode of the first embodiment of the present invention;
Fig. 5 illustrates the emission spectrum into a kind of white light emitting diode of the second embodiment of the present invention;
Fig. 6 illustrates the emission spectrum into a kind of white light emitting diode of the third embodiment of the present invention.
Embodiment
Please refer to Fig. 1, it illustrates the schematic diagram of a kind of white light emitting diode of the present invention.White light emitting diode 100 for example comprises encapsulation foot rest 110, a LED wafer 120 and a sealing 130, wherein encapsulate for example have one first contact 112a on the foot rest 110, one second contact 112b and a depression 110a, and LED wafer 120 is by being disposed in the depression 110a by an adhesion glue 140.In addition, LED wafer 120 has an anode electrode 122a and a cathode electrode 122b, it is respectively by being electrically connected with the first contact 112a and the second contact 112b of encapsulation foot rest 110 by a bonding wire 150, and sealing 130 is to be covered on the LED wafer 120, so that LED wafer 120 is bonded in the depression 110a.
Refer again to Fig. 1, LED wafer 120 for example can be sent an exciting light 124, and for example be doped with fluorescent material 132 in the sealing 130, and wherein part exciting light 124 can directly see through sealing 130 outgoing, and remainder exciting light 124 then can be incident upon on the fluorescent material 132.Wherein, be subjected to exciting light 124 irradiation after, the fluorescent materials in the fluorescent material 132 can be excited, produce the transition on electronic energy rank, and then send a fluorescence 134, at last by by the mixed light of exciting light 124 with fluorescence 134, but just outgoing one white light of white light emitting diode 100.
In addition, except that above-mentioned encapsulation foot rest, white light emitting diode of the present invention also can adopt a circuit substrate to replace encapsulating foot rest, please refer to Fig. 2, and it illustrates the schematic diagram of another kind of white light emitting diode of the present invention.White light emitting diode 200 for example comprises a circuit substrate 210, a LED wafer 220 and a sealing 230, wherein LED wafer 220 is to be disposed in the depression 210a of circuit substrate 210 through an adhesion glue 240, and electrically connects with mode and the circuit substrate 210 that routing engages.For example be doped with fluorescent material 232 in the sealing 230, and sealing 230 is to be covered on the LED wafer 220.So about the detailed effect of above-mentioned related elements and its annexation because of with Fig. 1 in the embodiment that illustrates similar, please refer to the related description of Fig. 1, no longer repeat to give unnecessary details at this.
In addition, though all illustrate the LED wafer that two electrodes are positioned at the wafer top simultaneously in the above-mentioned diagram, but on practice, the present invention also can adopt two electrodes to lay respectively at the LED wafer of the top and the bottom of wafer, and along with the difference of electrode position, the connected mode between LED wafer and the encapsulation foot rest (circuit substrate) is also different.
Please refer to Fig. 3, it illustrates the profile of a kind of LED wafer of the present invention.This LED wafer at first provides a substrate 300, and this substrate can be sapphire (sapphire), carborundum (SiC), zinc oxide (ZnO), silicon (Si) substrate, gallium phosphide (GaP), GaAs (GaAs), aluminium oxide (Al
2O
3) wait or base material that other are suitable for.Then one deck crystal nucleation layer (nucleation layer) 310 form be positioned at substrate 300 on, its material can be Al
uIn
vGa
1-u-vN (u, v 0; 0 u+v 1).
Then, first bond course (lower confinement layer) 330 is formed on the above-mentioned resilient coating 320.It can be the III-V group element compound of nitrogen gallium by material.The N type Al of doped N-type impurity for example
xIn
yGa
1-x-yN (x, y 0; 0 x+y＜1; X＞c) constitute.Selecting for use to being familiar with this skill person of semiconductor dealer of N type alloy known, this just superfluous stating in addition not.
Have an active layers (active layer) 340 on first bond course (lower confinement layer) 330, or be called luminescent layer (light emitting layer) 340.It can be made of the III-V family elemental nitrogen compound of material by the nitrogen gallium.And the material of active layers 340 can be the Al without doping or doping in this embodiment
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN (a, b 0; 0 a+b＜1; X, y 0; 0 x+y＜1; Quantum well (quantum well) structure of x＞c＞a), its alloy can be N type or P type, and selecting for use to being familiar with this skill person of semiconductor dealer of N type or P type alloy known, this just superfluous stating in addition not.
Then have more one second bond course (upper confinement layer) 332 on active layers 340, its material can be the III-V group element compound of nitrogen gallium.The P type Al of p type impurity for example mixes
xIn
yGa
1-x-yN (x, y 0; 0 x+y＜1; X＞c).Selecting for use to being familiar with this skill person of semiconductor dealer of P type alloy known, this just superfluous stating in addition not.The active layers 340 of N type or P type is enveloped by first bond course 330 and second bond course 332.The selecting for use or the like of the material selection of the III-V group element compound of above-mentioned each layer nitrogen gallium, component ratio, alloy all can be looked actual design and be changed, above-mentioned for example only as the usefulness of explanation.
On the zone that isolates with first bond course 330, second bond course 332 and active layers 340 on the resilient coating 320, dispose cathode electrode 362.The material of cathode electrode 362 can be Cr/Pt/Au, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Cr/Al/Pt/Au, Cr/Al/Ti/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, NiAl/Ti/Au, NiAl/Pt/Au, NiAl/Cr/Au .... etc., itself and conductive buffer layer have good ohmic contact, and then lower contact resistance is arranged.
Then, above second bond course 332, form a contact layer 350.Wherein, contact layer 350 is made of the III-V family element material with high carrier (carrier) concentration, for example can be superlattice strained layer (SLS), and its material for example is the material of the III-V group element compound of nitrogen gallium, for example Al
uIn
vGa
1-u-vN/Al
xIn
yGa
1-x-yN SLS (u, v 0; 0 u+v 1; X, y 0; 0 x+y＜1; X＞u).And this superlattice strained layer is to adopt so-called modulation to mix (modulation doped), and its alloy can wherein be preferably P type alloy for N type or the doping of P type.
Then, form an anode electrode 360 on contact layer 350, its material is thin metal, Ni/Au for example, TiN, the oxidic, transparent, conductive layers of Pd/Au/Pt/Au etc. or N-type (transparentconductive oxide, TCO) for example tin indium oxide (ITO), tin oxide cadmium (CTO), AgInO
2: Sn and In
2O
3: Zn etc., or the TCO of P type CuAlO for example
2, LaCuOS, CuGaO
2With SrCu
2O
2Or the like.
According to feature of the present invention, above-mentioned LED wafer is sent excites the light wavelength for example can be between between the 250nm to 490nm, and fluorescent material for example comprises gold-tinted fluorescent material, red light fluorescent powder, green light fluorescent powder and blue light fluorescent powder etc.Wherein, the material of gold-tinted fluorescent material for example can be selected from (Tb
3-x-yCe
xRe
y) Al
5O
12And (Me
1-x-yEu
xRe
y)
3SiO
5The group that is formed one of them; The material of red light fluorescent powder for example can be selected from Y
2O
3: Eu
3+, Y
2O
3: Bi
3+, (Y, Gd)
2O
3: Eu
3+, (Y, Gd)
2O
3: Bi
3+, Y
2O
2S:Eu
3+, Y
2O
2S:Bi
3+, (Me
1-xEu
x) ReS and 6MgO, As
2O
5: Mn, Mg
3SiO
4: Mn, the group that is formed one of them; The material of green light fluorescent powder for example can be selected from YBO
3: Ce
3+, YBO
3: TB
3+, SrGa
2O
4: Eu
2+, SrAl
2O
4: Eu
2+, (Ba, Sr) MgAl
10O
17: Eu
2+And (Ba, Sr) MgAl
10O
17: Eu
2, Mn
2+The group that is formed one of them, and the material of blue light fluorescent powder for example can be selected from BaMgAl
10O
17: Eu
2+And (Ca, Sr, Ba)
5(PO
4)
3Cl:Eu
2+, Gd
2+The group that is formed one of them, and 0＜x 0.8,0 y 20, and Me be selected from group that calcium, strontium, barium forms one of them, and Re be selected from group that praseodymium, rubidium, samarium, dysprosium, holmium, yttrium, erbium, europium, thulium, ytterbium, chromium, strontium, gold-plating, gadolinium, aluminium, zinc form one of them.
It should be noted that the emission spectrum that white light emitting diode of the present invention is exported is also different along with the difference of the fluorescent material that excites light wavelength (frequency) and arranged in pairs or groups, hereinafter be illustrated especially exemplified by a plurality of embodiment.
[embodiment one] (exciting light wavelength) between between the 440nm to 490nm
For example, when LED wafer is a wavelength during between the blue light-emitting diode wafer between the 440nm to 490nm, fluorescent material for example comprises that above-mentioned gold-tinted fluorescent material and red light fluorescent powder equal excitation can the lower fluorescent materials in rank.Please refer to Fig. 4, it illustrates the emission spectrum of a kind of white light emitting diode of the first embodiment of the present invention, and wherein the mixing ratio of fluorescent material is as can be 92% gold-tinted fluorescent material (Tb
3(Al, Si)
5O
12: Gd
3+, Ce
3+, Y
3+, Dy
3+Red light fluorescent powder ((Sr, Ca) ReS:Eu of collocation 8%
2+), and LED wafer is for example sent the blue excitation light that wavelength is 470nm.Behind the process excitation light irradiation, gold-tinted fluorescent material for example can send the yellow fluorescence 410 of wavelength between 540nm～580nm, and red light fluorescent powder for example can send the red fluorescence 420 that wavelength peak is 610nm.Under the mixed light of blue excitation light, yellow fluorescence and red fluorescence, just can form the white light of a high color rendering, white light emitting diode of the present invention then is a three-wavelength type white light emitting diode.
Based on the first above-mentioned embodiment, in the material category that does not change fluorescent material, and only change each material percentage composition prerequisite under, the result that white light emitting diode is exported is also with different.For example the proportioning of fluorescent material is changed to 20% gold-tinted fluorescent material (Tb
3(Al, Si)
5O
12: Gd
3+, Ce
3+, Y
3+, Dy
3+) collocation 80% red light fluorescent powder ((Sr, Ca) ReS:Eu
2+), and LED wafer for example can be sent the blue excitation light that wavelength is 450nm.Thus, behind excitation light irradiation, the red fluorescence that red light fluorescent powder sent will have higher luminous intensity than the yellow fluorescence that gold-tinted fluorescent material sent, and then can form the pink light of a high brightness behind mixed light.
[embodiment two] (exciting light wavelength) between between the 395nm to 440nm
Please refer to Fig. 5, it illustrates the emission spectrum of a kind of white light emitting diode of the second embodiment of the present invention, wherein gets suitable fluorescent material proportioning, comprises gold-tinted fluorescent material (Tb
3Al
5O
12: Gd
3+, Ce
3+, Y
3+, Sr
3SiO
5: Eu
2+), green light fluorescent powder (SrAl
2O
4: Eu
2+, (Ba, Sr)
2.5SiO
5: Eu
2+), red fluorescence powder ((Sr, Ca) ReS:Eu
2+, Mg
3SiO
4: Mn) and blue light fluorescent powder ((Ca, Sr, Ba)
5(PO
4)
3Cl:Eu
2+, Gd
3+), and a wavelength is provided is that the royal purple light of 405nm is as exciting light.Wherein, after blue light fluorescent powder absorbs exciting light, the blue-fluorescence 510 of 460nm wavelength can be radiated, can radiate the green fluorescence 520 of 520nm wavelength after green light fluorescent powder is stimulated, and red light fluorescent powder the red fluorescence 540 of 610nm wavelength can be sent.In addition, the fluorescent material of gold-tinted then can absorb the part blue-fluorescence that blue light fluorescent powder sends, and then radiates yellow fluorescence 530, and forms one or four wavelength and the preferable white light of color rendering with bluish violet exciting light, red fluorescence, blue-fluorescence and green fluorescence.
[embodiment three] (exciting light wavelength) between between the 250nm to 395nm
Please refer to Fig. 5, it illustrates the emission spectrum of a kind of white light emitting diode of the third embodiment of the present invention, wherein gets suitable fluorescent material proportioning, comprises gold-tinted fluorescent material (Tb
3Al
5O
12: Gd
3+, Ce
3+, Y
3+, Sr
3SiO
5: Eu
2+), green light fluorescent powder ((Ba, Sr)
2.5SiO
5: Eu
2+, (Ba, Sr) MgAl
10O
17: Eu
2+, (Ba, Sr) MgAl
10O
17: Mn
2+), red fluorescence powder ((Sr, Ca) ReS:Eu
2+, Mg
3SiO
4: Mn, 6MgO.As
2O
5: Mn
2+And blue light fluorescent powder ((Ca, Sr, Ba)
5(PO
4)
3Cl:Eu
2+, Gd
3+), and a wavelength is provided is that the purple light of 385nm is as exciting light.Wherein, after stimulated luminescence excites, green light fluorescent powder can radiate the green fluorescence 620 of 510nm wavelength, blue light fluorescent powder can radiate the blue-fluorescence 610 of 450nm wavelength, red light fluorescent powder can strengthen the red fluorescence 640 that wavelength is 660nm, and gold-tinted fluorescent material can be launched yellow fluorescence 630, and then form one or four wavelength and the better white light of color rendering behind the part blue-fluorescence that the absorption blue light fluorescent powder is launched.
By above-mentioned a plurality of embodiment as can be known, white light emitting diode of the present invention is an exciting light of using a higher-energy, for example wavelength is between the purple light excited light between the 365nm to 395nm, or or even the ultraviolet excitation light of wavelength lower (less than 365nm), and fluorescent material comprises that more green light fluorescent powder or blue light fluorescent powder equal excitation can the higher materials in rank except that existing red light fluorescent powder or gold-tinted fluorescent material.And LED wafer of the present invention is sent excites light wavelength shorter, and its energy is relatively higher, and therewith the fluorescent material kind of exciting light reaction also relatively the more, and the degree that fluorescent material is stimulated is also more fully.
In sum, feature of the present invention be by by wavelength between the excitation source between the 250nm to 490nm, the action that comes the fluorescent material to the exciting light that can send different colours to excite, therefore along with the difference of the wavelength (frequency) of excitation source, the material that can be subjected to the excited fluorescent powder is also different.With the white light emitting diode of existing two wave length types in comparison, the white light emitting diode of three to four wave length types of the present invention has higher luminous efficiency and preferable color rendering.In addition, carry out the white light emitting diode of mixed light compared to a plurality of LED wafer of existing use, white light emitting diode of the present invention also has lower production cost and speed of production faster.
What deserves to be mentioned is that the excitation source of white light emitting diode of the present invention except that the LED wafer that the foregoing description illustrates, still comprises other excitation sources such as laser diode.In addition, in not breaking away from spiritual scope of the present invention, the proportioning of fluorescent material of the present invention with and selected material, when changing with the character (as color or brightness etc.) of required output light and the external conditions such as wavelength of excitation source, and white light emitting diode of the present invention more can pass through the allotment by the material of fluorescent material, and the output light of output certain luminance or color, and then develop into the light-emitting diode that full color is row.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (31)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100048492A CN1652360A (en) | 2004-02-06 | 2004-02-06 | white light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100048492A CN1652360A (en) | 2004-02-06 | 2004-02-06 | white light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1652360A true CN1652360A (en) | 2005-08-10 |
Family
ID=34867644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004100048492A Pending CN1652360A (en) | 2004-02-06 | 2004-02-06 | white light emitting diode |
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| Country | Link |
|---|---|
| CN (1) | CN1652360A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100367523C (en) * | 2005-12-19 | 2008-02-06 | 中山大学 | A white light LED device and its single-component dual-wavelength rare earth phosphor for fluorescent conversion and its preparation method |
| CN100490192C (en) * | 2005-06-21 | 2009-05-20 | 徐伟仁 | Light emitting diode |
| CN101379341B (en) * | 2006-01-31 | 2012-03-21 | 皇家飞利浦电子股份有限公司 | white light source |
| CN115417444A (en) * | 2022-09-22 | 2022-12-02 | 五邑大学 | Red oxide fluorescent powder excited by blue light and preparation method and application thereof |
-
2004
- 2004-02-06 CN CNA2004100048492A patent/CN1652360A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100490192C (en) * | 2005-06-21 | 2009-05-20 | 徐伟仁 | Light emitting diode |
| CN100367523C (en) * | 2005-12-19 | 2008-02-06 | 中山大学 | A white light LED device and its single-component dual-wavelength rare earth phosphor for fluorescent conversion and its preparation method |
| CN101379341B (en) * | 2006-01-31 | 2012-03-21 | 皇家飞利浦电子股份有限公司 | white light source |
| CN115417444A (en) * | 2022-09-22 | 2022-12-02 | 五邑大学 | Red oxide fluorescent powder excited by blue light and preparation method and application thereof |
| CN115417444B (en) * | 2022-09-22 | 2024-05-17 | 五邑大学 | A blue light excited red oxide phosphor and its preparation method and application |
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