CN1527100A - Setting method and device of all-dielectric broadband omnidirectional reflector with continuous gradual change period - Google Patents
Setting method and device of all-dielectric broadband omnidirectional reflector with continuous gradual change period Download PDFInfo
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Abstract
连续渐变周期全介质宽带全向反射器的设置方法及装置，利用透明材料衬底，选择两种折射率相异的介电光学材料周期覆盖，每周期介电光学材料层的构成是一层高折射率和一层低折射率介电材料，选取周期渐变量为0.005－0.03，周期数为10－200。该结构的特点是可以选用常规的介质材料组合(如TiO2和SiO2等)，研制出应用于可见光和红外频段的宽带的全向反射器件。这类器件在任意入射角下都保证光波的p分量和s分量，在较大的频率范围内部具有近100％的反射率。本发明中所用材料选择范围广，工艺成熟稳定，在光学器件与光通讯领域都具有十分诱人的应用前景。The setting method and device of the all-dielectric broadband omnidirectional reflector with continuous gradient period, using a transparent material substrate, selects two kinds of dielectric optical materials with different refractive indices to cover periodically, and the composition of each period of dielectric optical material layer is one layer high For the refractive index and a layer of low-refractive index dielectric material, the period gradient is selected to be 0.005-0.03, and the number of periods is 10-200. The characteristic of this structure is that the combination of conventional dielectric materials (such as TiO 2 and SiO 2 , etc.) can be selected to develop a broadband omnidirectional reflection device for visible light and infrared frequency bands. This type of device guarantees the p component and s component of light waves at any incident angle, and has a reflectivity of nearly 100% within a large frequency range. The materials used in the invention have a wide selection range, mature and stable technology, and have very attractive application prospects in the fields of optical devices and optical communications.
Description
一、技术领域1. Technical field
本发明属新材料与新技术领域，主要涉及利用新型一维介电微结构中光子传播的局域化效应，涉及一维光子全带隙结构与连续渐变周期全介质无损耗宽带全向反射器件的设置方法及装置。The invention belongs to the field of new materials and new technologies, and mainly relates to the use of the localization effect of photon propagation in a novel one-dimensional dielectric microstructure, and relates to a one-dimensional photon full bandgap structure and a continuous gradient period all-dielectric lossless broadband omnidirectional reflection device setting method and device.
二、背景技术2. Background technology
在未来的集成光子器件与光通讯等技术领域，光子带隙材料与结构(光子晶体)将占据非常重要的地位，它是一种限制与传导光子的介电常数周期性分布的人工微结构材料。其中的一维光子带隙材料虽然目前在半导体激光器等微电子和光电子领域已得到广泛应用，但由于其结构空间周期的有限性与Brewster效应的影响，该结构不存在全向能隙，进而限制了它的应用范围。尽管目前已有两种方法部分解决了这个问题，如增大两种介电材料的介电常数的比值或增加另外的周期结构即所谓光子异质结构，以减小Brewster效应的影响，实现有一定带隙的全向反射，但这些方法都有一定的局限性，如提高了材料的选择性活增加了结构的复杂性，且带隙宽度是有限的，同时在制备工艺方面也提高了难度，与目前的微电子光电子制备工艺不太相容。In the technical fields of integrated photonic devices and optical communications in the future, photonic bandgap materials and structures (photonic crystals) will occupy a very important position. It is an artificial microstructure material that confines and conducts photons with a periodic distribution of dielectric constant. . Although the one-dimensional photonic bandgap material has been widely used in the fields of microelectronics and optoelectronics such as semiconductor lasers, due to the limited space period of its structure and the influence of the Brewster effect, the structure does not have an omnidirectional energy gap, thereby limiting its scope of application. Although there are currently two methods to partially solve this problem, such as increasing the ratio of the permittivity of the two dielectric materials or adding another periodic structure, the so-called photon heterostructure, to reduce the influence of the Brewster effect and achieve effective Omnidirectional reflection with a certain band gap, but these methods have certain limitations, such as improving the selectivity of the material and increasing the complexity of the structure, and the band gap width is limited, and it also increases the difficulty in the preparation process , are not very compatible with the current microelectronic optoelectronic fabrication process.
三、发明内容3. Contents of the invention
本发明采用一种新颖的一维介电微结构设计思想，即利用连续渐变周期结构，实际上是一种非周期结构对光子的局域化效应，彻底消除了Brewster效应的影响，设计出一种新型的一维光子全带隙结构，并通过使用常规介电材料，调节两介质构成的渐变周期，实现在可见光和红外频段具有宽带隙的全向反射，从而可根据该物理原理利用两种常规介电材料设计，并制备出具有较宽反射频带可应用于可见光和红外不同频段的全向反射器件。The present invention adopts a novel one-dimensional dielectric microstructure design idea, that is, utilizes a continuous gradual change periodic structure, which is actually a localization effect of a non-periodic structure on photons, completely eliminates the influence of the Brewster effect, and designs a A new type of one-dimensional photonic full bandgap structure, and by using conventional dielectric materials to adjust the gradual change period formed by the two media, omnidirectional reflection with wide bandgap in the visible and infrared frequency bands can be realized, so that two kinds of materials can be used according to this physical principle Conventional dielectric materials are designed, and an omnidirectional reflective device with a wide reflection frequency band can be applied to different frequency bands of visible light and infrared.
本发明的目的是：利用上述思想设计一种新型的一维光子全带隙结构，采用常规介电光学材料(如TiO2，SiO2等)和常规一维周期制备工艺，从而设计和制备应用于可见光和红外频段的无损耗全介质宽带全向反射器件。The purpose of the present invention is: utilize above-mentioned idea to design a kind of novel one-dimensional photon full bandgap structure, adopt conventional dielectric optical material (such as TiO 2 , SiO 2 etc.) and conventional one-dimensional periodic preparation technology, thereby design and manufacture application Lossless all-dielectric broadband omnidirectional reflective device in the visible and infrared bands.
本发明的技术解决方案是：连续渐变周期全介质宽带全向反射器的设置方法，利用透明材料衬底，采用常规介电光学材料(如TiO2，SiO2等)，选择两种折射率相异的介电光学材料周期覆盖，每周期介电光学材料层的构成是一层高折射率和一层低折射率介电材料，选取周期渐变量为0.005-0.03，周期数为10-200，如50、60、70、99，折射率有明显差异的介电光学材料，如TiO2和SiO2，两种渐变周期材料也可以采用ZrO2/SiO2，ZrO2/Al2O3，ZnS/MgF2等具有高低折射率的介电材料组合以调节全反射带宽的设计。周期渐变量为相邻两层介电材料之间光学厚度差与第一层介电材料(或称介质)光学厚度的比值。典型的透明材料如石英、玻璃及高聚物材料。周期数选20-100之间更好。The technical solution of the present invention is: the setting method of the all-dielectric broadband omnidirectional reflector with a continuous gradual change period, using a transparent material substrate, adopting conventional dielectric optical materials (such as TiO 2 , SiO 2 , etc.), and selecting two phases of refractive index Different dielectric optical material periodic coverage, the composition of each periodic dielectric optical material layer is a layer of high refractive index and a layer of low refractive index dielectric material, the selected period gradient is 0.005-0.03, and the number of periods is 10-200. Such as 50, 60, 70, 99, dielectric optical materials with significant difference in refractive index, such as TiO 2 and SiO 2 , two graded period materials can also use ZrO 2 /SiO 2 , ZrO 2 /Al 2 O 3 , ZnS /MgF 2 and other dielectric materials with high and low refractive index are combined to adjust the design of the total reflection bandwidth. The periodic gradient is the ratio of the optical thickness difference between two adjacent layers of dielectric materials to the optical thickness of the first layer of dielectric material (or medium). Typical transparent materials such as quartz, glass and polymer materials. It is better to choose the number of cycles between 20-100.
本发明每层介电材料光学厚度无须特殊的约定，一般在十至二百纳米的范围，既便于生长控制，又能达到本发明的目的。常用的是10至50纳米。The optical thickness of each layer of dielectric material in the present invention does not need special agreement, generally in the range of 10 to 200 nanometers, which is not only convenient for growth control, but also can achieve the purpose of the present invention. Commonly used is 10 to 50 nanometers.
本发明连续渐变周期全介质宽带全向反射器，就是以上述方法设置的装置。The all-dielectric broadband omnidirectional reflector with continuous tapering period of the present invention is the device arranged by the above method.
本发明利用高真空电子束蒸发和电阻热蒸发或溅射方法，在透明材料衬底上生长制备应用于可见光频段具有调节全反射带宽的器件。The invention utilizes high-vacuum electron beam evaporation and resistance thermal evaporation or sputtering methods to grow on a transparent material substrate to prepare a device with adjustable total reflection bandwidth applied in the visible light frequency band.
本发明特点是：可以采用各种组合、不同周期数介电光学材料，如图1所示的一维连续渐变周期介电微结构，然后根据不同的应用频段，设计应用于可见光和近红外区、或紫外区，具有宽带隙的一维光子全带隙结构全向反射器。调节渐变周期与周期渐变量，可得到不同带宽的全向反射光谱。The feature of the present invention is that various combinations and different period numbers of dielectric optical materials can be used, such as the one-dimensional continuous gradient period dielectric microstructure shown in Figure 1, and then designed to be applied to visible light and near-infrared regions according to different application frequency bands , or in the ultraviolet region, a one-dimensional photonic full-bandgap omnidirectional reflector with a wide bandgap. By adjusting the gradient period and period gradient, omnidirectional reflection spectra with different bandwidths can be obtained.
四、附图说明4. Description of drawings
图1为本发明设计的新型一维光子全带隙结构与全介质无损耗宽带全向反射器件的结构示意图。图1中衬底1、TE、TM为沿光线传播的两个垂直的振动方向，2为周期介质材料，其中dH、dL、nH、nL分别为周期介质材料(一层高折射率和一层低折射率)介电材料的宽度和折射率。Fig. 1 is a structural schematic diagram of a novel one-dimensional photonic full bandgap structure and an all-dielectric lossless broadband omnidirectional reflective device designed by the present invention. In Fig. 1, substrate 1, TE, and TM are two vertical vibration directions along the light propagation, and 2 is a periodic dielectric material, where d H , d L , n H , and n L are periodic dielectric materials (a layer of high refraction rate and a layer of low refractive index) the width and refractive index of the dielectric material.
图2为在可见光区，相同周期渐变量的连续渐变周期全介质宽带全向反射器的带隙结构随着不同周期数改变的变化示意图，其中周期渐变量Δ＝0.01。(a)、(b)、(c)以及(d)分别对应周期数为30、44、52、60的全介质宽带全向反射器的带隙结构变化示意图，图中阴影部分为带隙。Fig. 2 is a schematic diagram of the change of the bandgap structure of the continuous gradient period all-dielectric broadband omnidirectional reflector with the same period gradient in the visible light region with different period numbers, where the period gradient Δ=0.01. (a), (b), (c) and (d) correspond to the schematic diagrams of the bandgap structure changes of all-dielectric broadband omnidirectional reflectors with period numbers of 30, 44, 52, and 60, respectively. The shaded part in the figure is the bandgap.
图3为在可见光区，相同周期数的连续渐变周期全介质宽带全向反射器的带隙结构随着不同周期渐变量改变的变化示意图，其中周期数为60。(a)、(b)、(c)以及(d)分别对应周期渐变量为0.005、0.01、0.015和0.02，图中阴影部分为带隙。Fig. 3 is a schematic diagram of the change of the bandgap structure of the all-dielectric broadband omnidirectional reflector with continuous gradient period with the same period number in the visible light region as the period changes with different period gradients, where the period number is 60. (a), (b), (c) and (d) correspond to the periodic gradients of 0.005, 0.01, 0.015 and 0.02, respectively, and the shaded part in the figure is the band gap.
图4为在不同入射角下，连续渐变周期全介质宽带全向反射器在可见光区的反射光谱，其中周期数为60，周期渐变量为0.01。(a)、(b)、(c)以及(d)分别对应入射角为0°、30°、60°和89°时的全介质宽带全向反射器的反射光谱曲线，图中阴影部分为高反射带。Fig. 4 is the reflection spectrum of the all-dielectric broadband omnidirectional reflector in the visible light region with a continuous gradient period under different incident angles, where the period number is 60 and the period gradient is 0.01. (a), (b), (c) and (d) correspond to the reflection spectrum curves of the all-dielectric broadband omnidirectional reflector when the incident angles are 0°, 30°, 60° and 89°, respectively. The shaded part in the figure is Highly reflective tape.
图5为在近红外区，相同的周期渐变量的连续渐变周期全介质宽带全向反射器的带隙结构随着不同周期数改变的变化示意图，其中周期渐变量Δ＝0.005。(a)、(b)、(c)以及(d)分别对应周期数为50、60、70和99的全介质宽带全向反射器的带隙结构变化示意图，图中阴影部分为带隙。Fig. 5 is a schematic diagram of the change of the bandgap structure of the continuous gradient period all-dielectric broadband omnidirectional reflector with the same period gradient in the near-infrared region with different period numbers, where the period gradient Δ=0.005. (a), (b), (c) and (d) correspond to the schematic diagrams of the bandgap structure changes of all-dielectric broadband omnidirectional reflectors with period numbers of 50, 60, 70 and 99, respectively. The shaded part in the figure is the bandgap.
图6为在不同入射角下，连续渐变周期全介质宽带全向反射器在近红外区的反射光谱，其中周期数为99，周期渐变量为0.005。(a)、(b)、(c)以及(d)分别对应于入射角为0°、30°、60°和89°时的全介质宽带全向反射器的反射光谱曲线，图中阴影部分为高反射带。Fig. 6 is the reflection spectrum of the all-dielectric broadband omnidirectional reflector in the near-infrared region with a continuous gradient period at different incident angles, where the period number is 99 and the period gradient is 0.005. (a), (b), (c) and (d) correspond to the reflection spectrum curves of the all-dielectric broadband omnidirectional reflector when the incident angles are 0°, 30°, 60° and 89° respectively, the shaded part in the figure for high reflection bands.
五、具体实施方式5. Specific implementation
以下结合附图并通过具体实施实例对本发明做进一步的说明：Below in conjunction with accompanying drawing and by specific implementation example the present invention will be further described:
图1为本发明设计的新型一维光子全带隙结构与全介质无损耗宽带全向反射器件的结构示意图。Fig. 1 is a structural schematic diagram of a novel one-dimensional photonic full bandgap structure and an all-dielectric lossless broadband omnidirectional reflective device designed by the present invention.
图2所示，在可见光区，相同周期渐变量的连续渐变周期全介质宽带全向反射器的带隙结构随着不同周期数改变而变化，如图2所示，该反射器的带隙宽度在可见光区是随着周期数的增加而不断则增大。对应的带隙宽度分别为从522.8nm到561.4nm共38.6nm、从522.5nm到625.4nm共102.9nm、从519.5nm到662nm共142.5nm和从520nm到701nm共181nm。As shown in Figure 2, in the visible light region, the bandgap structure of the continuous gradient period all-dielectric broadband omnidirectional reflector with the same period gradient changes with different period numbers. As shown in Figure 2, the bandgap width of the reflector In the visible light region, it increases continuously with the increase of the number of cycles. The corresponding bandgap widths are 38.6nm from 522.8nm to 561.4nm, 102.9nm from 522.5nm to 625.4nm, 142.5nm from 519.5nm to 662nm, and 181nm from 520nm to 701nm.
如图3所示，该反射器的带隙宽度在可见光区是随着周期渐变量的增加而不断增大，对应的带隙宽度分别从506.8nm到582.8nm共76nm、从520nm到701nm共181nm、从537.5nm到819nm共281.nm和从548nm到940nm共392nm。As shown in Figure 3, the bandgap width of the reflector in the visible light region increases with the increase of the periodic gradient, and the corresponding bandgap widths are from 506.8nm to 582.8nm, a total of 76nm, and from 520nm to 701nm, a total of 181nm. , A total of 281.nm from 537.5nm to 819nm and a total of 392nm from 548nm to 940nm.
如图5所示，该反射器的带隙宽度在近红外区同样随着周期数的增加而不断增大。从1427nm到1556.5nm共129.5nm、从1433nm到1621nm共188nm、从1435nm到1685nm共250nm和从1429nm到1871m共442nm。As shown in Figure 5, the bandgap width of the reflector also increases with the increase of the number of cycles in the near-infrared region. A total of 129.5nm from 1427nm to 1556.5nm, a total of 188nm from 1433nm to 1621nm, a total of 250nm from 1435nm to 1685nm, and a total of 442nm from 1429nm to 1871nm.
本发明选择高折射率介质为TiO2(在可见光区nH＝2.300，在近红外区nH＝2.250)，低折射率介质为SiO2(在可见光区nL＝1.460，在近红外区nL＝1.446)。In the present invention, the high refractive index medium is TiO2 (n H =2.300 in the visible light region, n H =2.250 in the near infrared region), and the low refractive index medium is SiO2 (n L =1.460 in the visible light region, n L =1.460 in the near infrared region, n L = 1.446).
如上所述，继续增加周期数性能并没有更实质的提高，当然，亦可以取200以上的周期，工艺繁一些，但没有超出本发明的范围。而介电材料层的组合选取也可以采用ZrO2/SiO2，ZrO2/Al2O3，ZnS/MgF2以调节全反射带宽的设计。原理与结果基本在上述实施例的范围内，具有相同的变化趋势。As mentioned above, continuing to increase the number of cycles does not improve the performance substantially. Of course, more than 200 cycles can also be used, and the process is more complicated, but it does not exceed the scope of the present invention. And the combination selection of the dielectric material layer can also adopt ZrO 2 /SiO 2 , ZrO 2 /Al 2 O 3 , ZnS/MgF 2 to adjust the design of the total reflection bandwidth. The principles and results are basically within the scope of the above embodiments, and have the same variation trend.
实现本发明的生产方法是常规的方法，利用高真空电子束蒸发和电阻热蒸发或溅射方法，蒸发源为TiO2、ZrO2、SiO2，ZrO2、Al2O3，ZnS、MgF2等，玻璃或透明材料的范围极为广泛，如石英、玻璃和光学玻璃、一般在石英衬底上生长制备较好，可以控制介电材料薄膜的位置和厚度，介电层位置和厚度，均为常用的方法，根据设计的要求来决定结构。亦可用高聚物透明材料(如聚苯乙烯、聚碳酸酯、PMMA等)，但工艺上采取室温蒸镀的方式，如离子源辅助蒸发的工艺，此均为常规工艺。这些均没有超出本发明的范围。The production method for realizing the present invention is a conventional method, using high vacuum electron beam evaporation and resistance thermal evaporation or sputtering method, and the evaporation source is TiO 2 , ZrO 2 , SiO 2 , ZrO 2 , Al 2 O 3 , ZnS, MgF 2 etc., glass or transparent materials have a wide range, such as quartz, glass and optical glass, generally grown on a quartz substrate is better, the position and thickness of the dielectric material film can be controlled, and the position and thickness of the dielectric layer are both The commonly used method is to determine the structure according to the requirements of the design. High polymer transparent materials (such as polystyrene, polycarbonate, PMMA, etc.) can also be used, but the method of evaporation at room temperature is adopted in the process, such as the ion source assisted evaporation process, which is a conventional process. None of these go beyond the scope of the present invention.
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