CN1578547A - Mask for vapour-deposition use and producing method thereof - Google Patents
Mask for vapour-deposition use and producing method thereof Download PDFInfo
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- CN1578547A CN1578547A CNA2004100475492A CN200410047549A CN1578547A CN 1578547 A CN1578547 A CN 1578547A CN A2004100475492 A CNA2004100475492 A CN A2004100475492A CN 200410047549 A CN200410047549 A CN 200410047549A CN 1578547 A CN1578547 A CN 1578547A
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- 238000000034 method Methods 0.000 title claims abstract description 74
- 229910052751 metal Inorganic materials 0.000 claims abstract description 205
- 239000002184 metal Substances 0.000 claims abstract description 205
- 239000000463 material Substances 0.000 claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 claims abstract description 51
- 230000008021 deposition Effects 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000001704 evaporation Methods 0.000 claims description 127
- 230000008020 evaporation Effects 0.000 claims description 127
- 239000002994 raw material Substances 0.000 claims description 77
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical class [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 39
- 230000008093 supporting effect Effects 0.000 claims description 27
- 239000007788 liquid Substances 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 12
- 235000014347 soups Nutrition 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical class [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 19
- 238000007747 plating Methods 0.000 description 14
- 230000007797 corrosion Effects 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 13
- 238000003754 machining Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 238000010025 steaming Methods 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000005452 bending Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 239000007767 bonding agent Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 206010070834 Sensitisation Diseases 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000008313 sensitization Effects 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 208000034189 Sclerosis Diseases 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910001021 Ferroalloy Inorganic materials 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000013036 cure process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000025 natural resin Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention provides a method of manufacturing a mask for use in vapor deposition capable of obtaining high processing accuracy, good workability, and preventing a thin sheet material from occurrence of defect such as breaking or deformation. A laminated thin sheet material is used. The laminated thin sheet material includes a first metal layer, a second metal layer, and an intermediate layer that is made of a material having etching-resistance and solubility in a predetermined chemical and interposed between the first and second metal layers. The method comprises the steps of: etching the thin sheet material from two sides to provide the first metal layer with openings through which a deposition material passes as designed, and to provide the second metal layer with openings through which the deposition material passes within an area other than that of the first metal layer where the openings are provided in such a manner as to leave a frame portion; and removing an exposed portion of the intermediate layer by dissolving with the predetermined chemical.
Description
Technical field
The present invention relates to hang down evaporation that the organic EL of molecule (electroluminescence) material, electrode adopted when forming with evaporations such as material, dielectric material, insulating materials on the surface of substrate manufacture method and evaporation mask with mask.
Background technology
Organic EL display panel with the organic luminous layer that is formed by the low molecule organic EL Material luminous by auxiliary voltage manufactures by following manner, promptly, on transparency carrier, form transparent electrode layer, on this transparent electrode layer, form the organic luminous layer that forms by low molecule organic EL Material, also on this organic luminous layer, form metal electrode layer.In the manufacturing process of this organic EL display panel, the formation of the organic luminous layer on transparent electrode layer normally has the evaporation metal mask of a plurality of fine through holes of predetermined pattern by employing, the method for low molecule organic EL Material evaporation on substrate carried out.
In the past, the evaporation mask that is adopted in the formation operation of organic luminous layer manufactures by following method, promptly, utilize photoetching technique that metal-sheet parts is processed, the mask thin plate that making has one or more masks areas of a plurality of fine through holes that form predetermined pattern is fixed in this mask thin plate on the support.In addition, shown in 2001-No. 237073 documents of TOHKEMY like that, having the evaporation that the multiaspect of a plurality of masks areas uses also can be by following method manufacturing with mask, promptly, utilize photoetching technique, make a plurality of unit mask thin plates, simultaneously with single masks area, make base material portion, a plurality of unit mask thin plates are individually fixed in the edge of each peristome of base material portion with a plurality of peristomes with edge bearing unit mask thin plate.
Utilizing photoetching technique to make evaporation with under the situation of mask forming a plurality of fine through holes on the metal-sheet parts, the thickness of metal-sheet parts is thin more, for favourable more on the machining accuracy.On the other hand, if the good property of the processing of the metal-sheet parts when considering lithography process or when checking etc., and it is bad to prevent to produce bending, distortion etc., just must use the metal-sheet parts with certain thickness, as as described in ground, have and above-mentioned opposite requirement.
Summary of the invention
The present invention In view of the foregoing forms, and its purpose is, provides a kind of when can obtain high manufacturing accuracy, and operation is also good, can prevent that the thin plate raw material from producing manufacture method and the evaporation mask of the bad evaporation of bending, distortion etc. with mask.
Technical scheme 1 described invention relates to the manufacture method of a kind of evaporation that the deposition material evaporation is adopted on by the evaporation face time with mask, it is characterized in that, comprise following operation: use the thin plate raw material, this thin plate raw material is established folder between the 1st metal level and the 2nd metal level intermediate layer and is laminated, this intermediate layer by have etch-resistance, the regulation soup has deliquescent material and forms relatively; Aforementioned thin plate raw material is carried out etch processes from two sides, on aforementioned the 1st metal level, be formed for aperture portion that deposition material is passed through as desired, simultaneously, residual frame portion is formed for aperture portion that deposition material is passed through like that in the zone beyond the formation zone of the aforementioned aperture portion on aforementioned the 2nd metal level, in the 1st metal level; With the regulation soup, with the exposed portions serve dissolving and the removal in aforementioned intermediate layer.
Technical scheme 2 described inventions relate to the manufacture method of a kind of evaporation that the deposition material evaporation is adopted on by the evaporation face time with mask, it is characterized in that, comprise following operation: use the thin plate raw material, this thin plate raw material is established folder between the 1st metal level and the 2nd metal level intermediate layer and is laminated, this intermediate layer by have etch-resistance, the regulation soup has deliquescent material and forms relatively; Aforementioned thin plate raw material is carried out etch processes from a side, and residual frame portion is formed for aperture portion that deposition material is passed through like that on aforementioned the 2nd metal level; With the regulation soup, from a side as hereinbefore, with the exposed portions serve dissolving and the removal in aforementioned intermediate layer; From a side as hereinbefore, aforementioned thin plate raw material is carried out etch processes, on aforementioned the 1st metal level, in the formation zone of the aperture portion of aforementioned the 2nd metal level, be formed for the aperture portion that deposition material is passed through as desired.
Technical scheme 3 described inventions relate to the manufacture method of a kind of evaporation that the deposition material evaporation is adopted on by the evaporation face time with mask, it is characterized in that, comprise following operation: use the thin plate raw material, this thin plate raw material is established folder between the 1st metal level and the 2nd metal level intermediate layer and is laminated, this intermediate layer by have etch-resistance, the regulation soup has deliquescent material and forms relatively; Aforementioned thin plate raw material is carried out etch processes from a side or from two sides, form the aperture portion that deposition material is passed through as desired at aforementioned the 1st metal level; With diaphragm, cover the 1st metal level aforementioned thin plate raw material, that form aforementioned aperture portion with etch-resistance; The aforementioned thin plate raw material that the protected film of aforementioned the 1st metal level is covered carries out etch processes, and residual frame portion is formed for aperture portion that deposition material is passed through like that in the zone beyond the formation zone of the aforementioned aperture portion on aforementioned the 2nd metal level, in the 1st metal level; From the 1st metal level of aforementioned thin plate raw material, aforementioned diaphragm is peeled off and removed; With the regulation soup, with the exposed portions serve dissolving and the removal in aforementioned intermediate layer.
According to the manufacture method of technical scheme 1,, can improve etched machining accuracy by reducing to be formed with the 1st metal layer thickness of the aperture portion that will deposition material be passed through as desired to technical scheme 3 described every inventions.On the other hand, because will form the 2nd metal level of aperture portion in the mode of residual frame portion is layered on the 1st metal level, so guarantee the thickness of the integral body of thin plate raw material, when etching and processing or when checking etc. under the situation, the processing of thin plate raw material is good, in addition, bad worries such as the thin plate raw material bends, distortion are seldom arranged.
Technical scheme 4 described inventions relate to the manufacture method that technical scheme 1 to any one described evaporation in the technical scheme 3 is used mask, it is characterized in that the aperture portion that forms on aforementioned the 1st metal level is a plurality of fine aperture portion with predetermined pattern.
Technical scheme 5 described inventions relate to the manufacture method that technical scheme 1 to any one described evaporation in the technical scheme 3 is used mask, it is characterized in that the aperture portion that forms on aforementioned the 1st metal level is an integral finish shape aperture portion.
Technical scheme 6 described inventions relate to technical scheme 1 is used mask to any one the described evaporation in the technical scheme 3 manufacture method, it is characterized in that, to on aforementioned the 1st metal level and aforementioned the 2nd metal level, form the sheet member of aperture portion respectively, according to a mode, with an engage sides of support 52 along an one axial tension power.In this manufacture method, and sheet member to be compared with the situation that support engages according to the mode that is subjected to pulling force along biaxially oriented respectively, sheet member becomes easy with the operation that engages of support.In addition, with sheet member according under the mode that is subjected to pulling force respectively along biaxially oriented and the situation that support engages, if axial tension separately is inhomogeneous, then be difficult to accurately according to size designed, that reproduce aperture portion, but since with sheet member according to only engaged with support by the mode of pulling force along the single shaft direction, if so suitably adjust the pulling force of single shaft direction, then can be easily according to size designed, that precision is reproduced aperture portion well.
Technical scheme 7 described inventions relate to the manufacture method that technical scheme 1 to any one described evaporation in the technical scheme 3 is used mask, it is characterized in that aforementioned the 2nd metal layer thickness of aforementioned thin plate raw material is greater than aforementioned the 1st metal layer thickness.
In this manufacture method, owing to be formed with in order to make the 1st metal level attenuation of the aperture portion that deposition material passes through as desired, the thickness of the integral body of thin-plate member increases, so can suitably improve etched machining accuracy, the processing of thin plate raw material is better, and the worry of the bad generation of the bending of thin plate raw material, distortion etc. further reduces.
Technical scheme 9 described inventions relate to technical scheme 1 is used mask to any one the described evaporation in the technical scheme 3 manufacture method, it is characterized in that, the intermediate layer of aforementioned thin plate raw material is formed by resin material, the exposed portions serve in this intermediate layer is used the dissolving of film liquid and the removal of caustic soda.
Technical scheme 10 described inventions relate to a kind of evaporation mask, this evaporation is used for the deposition material evaporation in by the situation on the evaporation face with mask, it is characterized in that, it is by the following folded layer by layer sheet member that forms, this following layer is meant: the evaporation metal level, be formed for aperture portion that deposition material as desired passed through by etching at this evaporation on metal level, and this evaporation with metal level with by evaporation face fluid-tight engagement; The supporting metal level, on this supports with metal level, in mode in this evaporation residual frame portion in the zone beyond the formation zone of the aforementioned aperture portion of metal level, be formed for aperture portion that deposition material is passed through, this supporting is supported aforementioned evaporation metal level with metal level in the mode of enhancing; The intermediate layer, being partly dissolved and being removed with the aforementioned aperture portion of metal level is corresponding in this intermediate layer with this supporting, this intermediate layer is used between the metal level with metal level and aforementioned evaporation between this supporting.
Technical scheme 11 described inventions relate to technical scheme 10 described evaporation masks, it is characterized in that, being formed at aforementioned evaporation is a plurality of fine aperture portion with predetermined pattern with the aperture portion of metal level.
Technical scheme 12 described inventions relate to technical scheme 10 described evaporation masks, it is characterized in that, the aperture portion that is formed at aforementioned the 1st metal level is an integral finish shape aperture portion.
Technical scheme 13 described inventions relate to technical scheme 10 any one described evaporation mask to the technical scheme 12, it is characterized in that, according to only along the mode of an axial tension power of aforementioned sheet member, in aforementioned supporting metal level side, splice holder.
Technical scheme 14 described inventions relate to technical scheme 10 any one described evaporation mask to the technical scheme 12, it is characterized in that the 2nd metal layer thickness of aforementioned sheet member is greater than the 1st metal layer thickness.
Description of drawings
Fig. 1 is expression the 1st execution mode of the present invention, is the vertical view that evaporation amplifies with vertical view and its part of mask is together represented.
Fig. 2 is the sectional drawing of a part of generally representing the sheet member of deposition mask shown in Figure 1.
Fig. 3 is that each operation is represented by sectional drawing respectively for the figure of 1 example of the manufacture method that evaporation usefulness mask related to the present invention is described.
Fig. 4 is that the same, each operation is represented by sectional drawing respectively.
Fig. 5 is the figure of the operation that is used to illustrate that sheet member engages with support, and each operation is represented by stereogram respectively.
Fig. 6 is used to illustrate the figure of evaporation of the present invention with another example of the manufacture method of mask, and each operation is represented by stereogram respectively.
Fig. 7 is that the same, each operation is represented by sectional drawing respectively.
Fig. 8 is that the same, each operation is represented by sectional drawing respectively.
Fig. 9 is according to Fig. 6～evaporation that manufacture method shown in Figure 8 is made local amplification profile diagram of the sheet member of mask, is the amplification profile diagram of the B part among Fig. 8 (o);
Figure 10 is used to illustrate evaporation related to the present invention figure with another example of the manufacture method of mask, and each operation is represented by sectional drawing respectively.
Figure 11 is that the same, each operation is represented by sectional drawing respectively.
Wherein, description of reference numerals is as follows:
10,54,64 evaporation masks
12 sheet member
14 masks areas
16 evaporation metal levels
18 supporting metal levels
The intermediate layer of 20 sheet member
22 fine aperture portion
The 24 supportings frame portion of metal level
The 26 supportings aperture portion of metal level
30 thin plate raw materials
32 the 1st metal levels
34 the 2nd metal levels
The intermediate layer of 36 thin plate raw materials
38,40,58 photoresists
38b, 40b, 38c, 58b corrosion resistance etchant resist
42,44 exposure masks
46, the fine aperture portion in 60 the 1st metal levels
The aperture portion of 48 the 2nd metal levels
50,62 sheet member
52 supports
The bonding part of 56 supports and sheet member
Embodiment
With reference to the accompanying drawings, preferred implementation of the present invention is described.
Fig. 1 and Fig. 2 represent the 1st execution mode of the present invention, Fig. 1 is expression the 1st execution mode of the present invention, be that the vertical view that evaporation amplifies with vertical view and its part of mask is represented that together Fig. 2 generally represents evaporation shown in Figure 1 sectional drawing with the part of the sheet member of mask.This evaporation is on a side of rectangular-shaped support (not shown) with mask 10, fixedly has a sheet member 12 of a plurality of masks areas 14 and constitutes.
Sheet member 12 has evaporation is stacked with metal level 18 and intermediate layer 20 with metal level 16 and supporting and 3-tier architecture that form as shown in Figure 2.Evaporation becomes when the vapor deposition treatment with metal level 16, with the tight face that contacts in the surface of substrate, use on each masks area 14 of metal level 16 at evaporation, shown in the enlarged drawing of the A among Fig. 1 part like that, be processed to form with predetermined pattern in order to make a plurality of fine aperture portion that deposition material passes through as desired 22.The shape that is formed on the fine aperture portion 22 on this evaporation usefulness metal level 16 is rectangular-shaped in illustrated example, but also can be slit-shaped, grooving shape.
Supporting becomes the face of evaporation source when being formed in vapor deposition treatment with metal level 18, use on the metal level 18 in supporting, be formed for big aperture portion 26 that deposition material is passed through, so as evaporation with the zone beyond the formation zone of the trickle perforate 22 in the metal level 16 in, residual frame portion 24.This supporting is used for supporting with metal level 18, so that guarantee the thickness as sheet member 12 integral body, strengthens evaporation metal level 16.Thereby preferably the thickness of metal level 16 is used in supporting greater than evaporation with the thickness of metal level 18.On the other hand, because being formed on evaporation is to be used to make according to the lip-deep deposition material of required pattern evaporation at substrate pass through with a plurality of fine aperture portion 22 on the metal level 16, so be necessary to improve its machining accuracy, for this reason, preferably reduce the thickness of evaporation within the bounds of possibility with metal level 16.For example, the thickness that best evaporation is used metal level 16 is in the scope of 5 μ m～50 μ m, and supporting uses the thickness of metal level 18 in the scope of 20 μ m～300 μ m.Evaporation is such as described later with the aperture portion 26 of metal level 18 with the fine aperture portion 22 and the supporting of metal level 16, forms by photoetching technique respectively.In addition, evaporation uses metal level 18 respectively by Fe (iron) with metal level 16 and supporting, the Fe/Ni of iron-nickel alloy etc. (iron/nickel) alloy etc., but the metal material of photoetching forms.
Intermediate layer 20 is used between the metal level 18 with metal level 16 and supporting between above-mentioned evaporation.This intermediate layer 20 be the thin plate raw material for three-decker carry out the same photoetching process of aftermentioned and make sheet member 12 the result, residue in evaporation with metal level 16 and supporting with between the metal level 18, have the plane and the cross sectional shape that are removed with the 26 corresponding parts of the aperture portion in the metal level 18 with supporting.This intermediate layer 20 is by having etch-resistance, and the chemical liquid of the regulation beyond the etching solution is had deliquescent material forms.As such material, for example, use the Ti (titanium) of the akaline liquid be dissolvable in water caustic soda etc., resin material etc.
More particularly, the material for forming intermediate layer 20 preferably adopts Ti as metal material, this is from etch-resistance, and form evaporation metal level 16 and the metal material of supporting with metal level 18, for example, the viewpoint of the cementability of 36Ni ferroalloy etc. etc.As using between the 2nd metal level of metal level 18 with the 1st metal level and the formation supporting of metal level 16 at the formation evaporation, press from both sides the method for establishing the intermediate layer that forms by Ti and making the thin plate raw material of three-decker, for example, adopt following method, promptly, in the centre of 2 sheet metals, when forming film, with 2 sheet metals and the powerful pressure welding of Ti film by vacuum vapour deposition, ion plating, sputter method etc.The Ti that constitutes the intermediate layer of the thin plate raw material manufacture like this can use the film liquid of ammonium fluoride class, caustic soda class and dissolved.
In addition, as resin material, use having dissolubility, and be not dissolved in the synthetic resin or the natural resin of the heat cross-linking type of etching solution with bases film liquid.More particularly, the acrylic compounds film like resist that is commonly referred to as dry film can be easy to use, is best therefore.In order to make the thin plate raw material of three-decker with this acrylic compounds film like resist,, carry out stacked processing and carry out thermmohardening in mode at the middle clamping film like resist of 2 sheet metals.The acrylic compounds film like resist that constitutes the intermediate layer of the thin plate raw material manufacture like this can dissolve with the akaline liquid of caustic soda etc.In addition, on also can a side of one in 2 sheet metals, paste above-mentioned solubility adhesive linkage or the liquid bonding agent of coating in addition, engage another piece sheet metal, their powerful pressure weldings are made the thin plate raw material of three-decker by this adhesive linkage or bonding agent.The adhesive linkage or the bonding agent that constitute the intermediate layer can dissolve by strong alkaline liquid.In addition, also can a side of one in 2 sheet metals on, coating resist (no photonasty) by this resist, engages another piece sheet metal, their powerful pressure weldings is made the thin plate raw material of three-decker.Such resist can be used alkaline developing solution dissolution.
This evaporation is used for surface at substrate with mask 10, when pattern according to the rules, evaporation hang down molecule organic EL Material, electrode and form with material, dielectric material, insulating material etc.For example, in the manufacturing process of organic EL display panel, after transparency carrier (glass substrate) go up to form the transparent electrode layer of ITO (indium tin oxide) etc., with this evaporation with the evaporation of the sheet member 12 of mask 10 with the transparent electrode layer side aligned position of 16 sides of metal level and transparency carrier and fit tightly, pass the fine aperture portion 22 of sheet member 12, will hang down molecule organic EL Material evaporation on transparent electrode layer, make on transparent electrode layer the organic luminous layer that forms predetermined pattern.If the formation organic luminous layer then forms metal electrode layer in addition and makes organic EL display panel on this organic luminous layer.
The evaporation of Figure 1 and Figure 2 is made by following manner with the sheet member 12 of mask 10, by photoetching technique, forms aperture portion respectively on the 1st metal level of the thin-plate member of three-decker and the 2nd metal level that is:.Below by Fig. 3 and Fig. 4,1 example of evaporation with the manufacture method of mask is elaborated.
At first, shown in Fig. 3 (a), prepare between the 1st metal level 32 and the 2nd metal level 34, to press from both sides and established the thin plate raw material 30 in intermediate layer 36.The 1st metal level 32 and the 2nd metal level 34 are by invar alloy or iron nickel, and the metal material that thermal expansions such as cobalt alloy are few forms, and intermediate layer 36 is by forming as above-mentioned titanium or resin material.The thickness of the 1st metal level 32 is for example at 5 μ m～50 μ m, and the thickness of the 2nd metal level 34 is for example at 20 μ m～300 μ m.On the two sides of such thin plate raw material 30, shown in Fig. 3 (b), apply sensitization liquid respectively and be dried, adhere to respectively in the two sides of thin plate raw material 30 and form photoresist 38,40.
Secondly, shown in Fig. 3 (c), side at the 1st metal level 32 of thin plate raw material 30 fits tightly exposure mask 42, this exposure mask 42 has and the corresponding predetermined pattern of a plurality of fine aperture portion that will form, simultaneously, 34 sides of the 2nd metal level at thin plate raw material 30 fit tightly exposure mask 44, and this exposure mask 44 has residual frame portion in the zone beyond the formation zone in fine aperture portion, so that form the predetermined pattern of big aperture portion.Then, by each exposure mask 42,44, respectively with each photoresist 38,40 exposure, shown in Fig. 3 (d), pattern with each photoresist 38a, 40a sclerosis (not melting) afterwards, develops shown in Fig. 3 (e) respectively according to the rules, on the two sides of thin plate raw material 30, form corrosion resistance etchant resist 38b, 40b respectively with predetermined pattern.
Then, handle by carry out sputter etch with etching solutions such as ferric chloride in aqueous solution, shown in Fig. 4 (f) like that, on the 1st metal level 32, form in the fine aperture portion 46, the form with residual frame portion on the 2nd metal level 34 forms big aperture portion 48.Secondly, with film liquid such as caustic soda, shown in Fig. 4 (g), corrosion resistance etchant resist 38b, 40b are peeled off from the two sides of thin plate raw material 30.In addition and then, with film liquid such as caustic soda, shown in Fig. 4 (h), by exposed portions serve dissolving and the removal with intermediate layer 36, the fine aperture portion 46 of the 1st metal level 32 and the aperture portion of the 2nd metal level 34 48 are communicated with, and obtain sheet member 50.Shown in Fig. 4 (i) like that, by the sheet member 50 that will be made into like this a engage sides, finish evaporation with mask 54 with rectangular-shaped support 52.As support 12, for example, use the support body that forms by stainless steel or dilval etc.
For example following the carrying out of operation that sheet member 50 is engaged with support 52.That is, shown in the stereogram of Fig. 5 (a), sheet member 50 is overlapped with a side of support 52.At this moment, shown in Fig. 5 (b), sheet member 50 according to a mode along an one axial tension power, is overlapped with a side of support 52.Then, shown in Fig. 5 (c), sheet member 50 is subjected under the state of pulling force, the side of sheet member 50 at support 52 engaged with being integral.At this moment, with support 52, engage with the edges at two ends portion of sheet member 50 in the opposed relatively a pair of frame of the direction that sheet member 50 is applied pulling force portion.Label 56 among the figure is the bonding part of support 52 and sheet member 50.In addition, engage by welding, for example spot welding, carry out with the mode of the joint of bonding agent or splicing tape etc. to the sheet member 50 of support 52.
Secondly, based on Fig. 6～Fig. 8, to evaporation another example explanation with the manufacture method of mask.
Shown in Fig. 6 (a), preparation is pressed from both sides between the 1st metal level 32 and the 2nd metal level 34 and is established the thin plate raw material 30 in intermediate layer 36, shown in Fig. 6 (b), apply sensitization liquid respectively and make its drying, adhere to respectively in the two sides of thin-plate member 30 and form photoresist 38,40.
Then, shown in Fig. 6 (c), 34 sides of the 2nd metal level at thin plate raw material 30 fit tightly exposure mask 44, and this exposure mask 44 has residual frame portion in the zone beyond the formation zone in fine aperture portion, so that form the predetermined pattern of big aperture portion.Then, side at the 1st metal level 32 of thin plate raw material 30, above-mentioned state to photoresist 38 carry out blanket exposure in, in the side of the 2nd metal level 34 of thin plate raw material 30, by exposure mask 44, with photoresist 40 exposures, shown in Fig. 6 (d), side at the 1st metal level 32 of thin plate raw material 30 is hardened (not melting) photoresist 38 comprehensively, forms whole the corrosion resistance etchant resist 38c that covers the 1st metal level 32.On the other hand, side at the 2nd metal level 34 of thin plate raw material 30, with predetermined pattern with photoresist 40 sclerosis after, shown in Fig. 6 (e), it is developed, on 34 of the 2nd metal levels of thin plate raw material 30, form corrosion resistance etchant resist 40b with predetermined pattern.And, side for the 1st metal level 32 of thin plate raw material 30, substitute the mode that after adhering to the photic etching-film 38 of formation, its blanket exposure is formed corrosion resistance etchant resist 38c, also can take to have acid proof etch-resisting film in 32 applyings of the 1st metal level, after etch processes described later finishes, the mode that this etchant resist is peeled off from the 1st metal level 32 faces.
Then, by spraying etch processes, thus, shown in Fig. 7 (f), thereby form big aperture portion 48 in the residual frame of the 2nd metal level 34 portion with etching solutions such as ferric chloride in aqueous solution.Secondly, with film liquid such as caustic soda, shown in Fig. 7 (g), peel off corrosion resistance etchant resist 40b from the 2nd metal level 34 faces of thin plate raw material 30.In addition and then, with film liquid such as caustic soda, shown in Fig. 7 (h), the exposed portions serve in dissolving intermediate layer 36 is also removed.
Secondly, shown in Fig. 7 (i), in the side of the 2nd metal level 34 of thin plate raw material 30, coating sensitization liquid also is dried, and in 34 sides of the 2nd metal level, adheres to and forms the photoresist 58 that is filled in the aperture portion 48.Then, shown in Fig. 7 (j), at the bonding exposure mask 42 in side of the 2nd metal level 34 of thin plate raw material 30, this exposure mask 42 has and the corresponding predetermined pattern of a plurality of fine aperture portion that will form.Then, side from the 2nd metal level 34 of thin plate raw material 30, by exposure mask 42, with photic etching-film 56 exposures, shown in Fig. 8 (k), according to the rules pattern with photic etching-film 56 cure process (not melting) after, shown in Fig. 8 (1), it is developed, form corrosion resistance etchant resist 58b in the side of the 2nd metal level 34 of thin plate raw material 30 with predetermined pattern.
Then, by carrying out sputter etch, shown in Fig. 8 (m), form fine aperture portion 60 at the 1st metal level 32 with etching solutions such as ferric chloride in aqueous solution.Secondly,, shown in Fig. 8 (n),, peel off corrosion resistance etchant resist 58b, obtain sheet member 62 thus from the side of the 2nd metal level 34 of thin plate raw material 30 with film liquid such as caustic soda.Shown in Fig. 8 (o),, thus, finish evaporation with mask 64 with the engage sides of the sheet member that is made into like this 62 with rectangular-shaped support 52.
As the above-mentioned evaporation that manufactures shown in Figure 9 with the B amplification profile diagram partly of mask 64 as Fig. 8 (o), the cross section that is formed at the fine aperture portion 60 on the 1st metal level 32 of thin-plate member 30 is a taper surface, (become the face of evaporation source when the vapor deposition treatment from becoming with the face of the composition surface side of support 52, be following among Fig. 8 (o) and Fig. 9), towards another side (above among Fig. 8 (o) and Fig. 9 being), opening size diminishes gradually.When with evaporation with mask 64, this evaporation is equipped with mask 64 and has formed a plurality of sheet member 62 with fine aperture portion 60 of such cross sectional shape, for example, when evaporation hangs down the molecule organic EL Material on the transparent electrode layer on being formed at transparency carrier, face of the aperture area smaller side of aperture portion 60 sheet member 62, fine (being top among Fig. 8 (o) and Fig. 9) and transparent electrode layer opposite.So low molecule organic EL Material gas enters equably and carries out well to a plurality of fine aperture portion 60 of sheet member 62.In addition because the edge of opening of the fine aperture portion 60 of sheet member 62 and and transparent electrode layer between good bonding, so have the reproduced well advantage of pattern form precision by the organic luminous layer of the edge of opening defined of fine aperture portion 60.
Secondly, based on Figure 10 and Figure 11, evaporation another example with the manufacture method of mask is described.This manufacture method and above-mentioned manufacture method based on Fig. 3 and Fig. 4 explanation till the operation on the way, are identical till the operation shown in Fig. 3 (a)～(e) promptly, omit diagram and explanation for these operations.
Shown in Fig. 3 (e), if on the two sides of thin plate raw material 30, form corrosion resistance etchant resist 38b, 40b respectively, then by spraying etching with etching solutions such as ferric chloride in aqueous solution with predetermined pattern, shown in Figure 10 (f), form fine aperture portion 46 at the 1st metal level 32.At this moment, though the 2nd metal level 34 is also simultaneously etched partly at thickness direction, but, because the thickness of the 2nd metal level 34 is greater than the thickness of the 1st metal level 32, finish etching because form the moment of trickle aperture portion 46 at the 1st metal level 32, so, on the 2nd metal level 34, can not form the aperture portion that arrives intermediate layer 36.And; do not have under the situation of great difference at the thickness of the 1st metal level 32 and the thickness of the 2nd metal level 34; also can on 34 of the 2nd metal levels, paste and pay the surface that has acid proof etch-resisting film etc. and protect the 2nd metal level 34; then; spray etch processes; after etch processes finishes, etch-resisting film is peeled off from 34 of the 2nd metal levels.
If on the 1st metal level 32 of thin plate raw material 30, form fine aperture portion 46, then shown in Figure 10 (g), cover the surface of the 1st metal level 32 with diaphragm 66 with corrosion stability.This diaphragm 66 for example forms by following manner; that is: in 32 sides of the 1st metal level; the evaporation drying type resin of coating alkali-soluble; be dried then; or after the uv-hardening resin of 32 side coatings of the 1st metal level alkali-soluble; with ultraviolet ray it is exposed, maybe will protect adhering film to fit on 32 of the 1st metal levels.Secondly, by spraying etch processes with etching solutions such as ferric chloride in aqueous solution, shown in Figure 10 (h), the mode with residual frame portion on the 2nd metal level 34 forms big aperture portion 48.Then, dissolve resin molding on 32 of the 1st metal levels, or from 32 of the 1st metal levels, will protect adhering film to peel off, thus, shown in Figure 10 (i), peel off diaphragm 66 and with its removal from 32 of the 1st metal levels with alkalies.Then, with film liquid such as caustic soda, shown in Figure 10 (j), from the two sides of thin plate raw material 30, peel off corrosion resistance etchant resist 38b, 40b respectively.And; when forming diaphragm 66 with alkali soluble resin; by with alkalies such as caustic soda, the removal of the diaphragm 66 from 32 of the 1st metal levels and the corrosion resistance etch-resisting film 38b from the two sides of thin plate raw material 30, peeling off in 1 operation of 40b carried out.
In addition and then, with film liquid such as caustic soda, shown in Figure 11 (k), by exposed portions serve dissolving and the removal with intermediate layer 36, the fine aperture portion 46 of the 1st metal level 32 and the aperture portion of the 2nd metal level 34 48 are communicated with, and obtain sheet member 50.Shown in Figure 11 (1),, finish evaporation with mask 54 by the engage sides of the sheet member that will be made into like this 50 with the support 52 of rectangle.
With this manufacture method the time, the 1st metal level 32 that forms fine aperture portion 46 is protected in the way of operation, can prevent to produce the defective of bending, damage etc. at the 1st thin metal level 32.
And, in the above-described embodiment, form a plurality of fine aperture portion for going up with metal level (the 1st metal level) at the evaporation of sheet member, the evaporation that adopts when mainly evaporation hangs down the molecule organic EL Material on the surface of substrate is illustrated with mask and manufacture method thereof, but, for example, form integral finish shape aperture portion for going up with metal level (the 1st metal level) at the evaporation of sheet member, used evaporation was with mask etc. when electrode evaporation formed and to form electrode with material on the surface of substrate, same applicable the present invention.
In addition, above-mentioned execution mode is after making sheet member with photoetching technique, and sheet member is engaged with support, but, also can before thin-plate member is carried out etching and processing, this sheet member be engaged with support, to the thin plate raw material of the state that engages with support, implement etching and processing.
According to technical scheme 1 to steaming plating of each relevant invention of technical scheme 3 manufacturing side with mask Method when can obtain to have the steaming plating usefulness mask of high machining accuracy, can prevent thin-plate member The bad generation of bending, distortion etc. Simultaneously, according to this manufacture method, even in large-scale steaming Plating also can be made without barrier with in the situation of mask.
The manufacture method of the invention relevant with technical scheme 4 can obtain to steam plating with high machining accuracy and use Mask, this steaming plating comprises the masked area that forms a plurality of fine aperture portion with predetermined pattern with mask The territory for example, is used when steaming the low molecule organic EL Material of plating on the surface of substrate.
The manufacture method of the invention relevant with technical scheme 5 can obtain to steam plating with covering with high machining accuracy Mould, this steaming plating is formed with integral finish shape aperture portion with mask, for example, electrode evaporation on the surface of substrate Formation is used when forming electrode with material.
The manufacture method of the invention relevant with technical scheme 6 can make the single face side joint with sheet member and support The operation of closing becomes easily, in addition, can according to design, easily reproduce the chi of aperture portion accurately Very little.
The manufacture method of the invention relevant with technical scheme 7 can suitably improve etched machining accuracy Simultaneously, the processing of thin plate raw material becomes well, and is bad for the bending that produces the thin plate raw material, distortion etc. It is few to worry to become.
Manufacture method of each invention relevant with technical scheme 8 and technical scheme 9 is positively carried out and the technical side Processing in each operation of the manufacture method of each invention that case 1～technical scheme 3 is correlated with, and obtain above-mentioned effect Really.
The steaming plating of the invention relevant with technical scheme 10 is with mask machining accuracy height, and it makes the operation of operation The property also good, in making operation, do not have the bad generation of the bending of thin plate raw material, distortion etc. yet.
The steaming plating mask of the invention relevant with technical scheme 11, owing to having high machining accuracy, for example, Can on the surface of substrate, steam well the low molecule organic EL Material of plating, form high-quality organic light emission Layer.
The steaming plating mask of the invention relevant with technical scheme 12, owing to having high machining accuracy, for example, Can on the surface of substrate, well electrode evaporation formation use material, form high-quality electrode.
The steaming plating mask of the invention relevant with technical scheme 13, according to design, with good precision, Reproduce the size of aperture portion, its operation of making operation is also easy.
Mask is used in the steaming plating of the invention relevant with technical scheme 14, guarantees high machining accuracy, manufacturing step Operation also better, in making operation, do not have bending, distortion etc. bad of thin plate raw material yet Generation.
Claims (14)
1, a kind of evaporation is with the manufacture method of mask, and the deposition material evaporation is adopted on by the evaporation face time, it is characterized in that, comprises following operation:
Use the thin plate raw material, this thin plate raw material is established the intermediate layer with folder between the 1st metal level and the 2nd metal level and is laminated, this intermediate layer by have etch-resistance, the regulation soup has deliquescent material and forms relatively; Aforementioned thin plate raw material is carried out etch processes from two sides, on aforementioned the 1st metal level, be formed for aperture portion that deposition material is passed through as desired, simultaneously, residual frame portion is formed for aperture portion that deposition material is passed through like that in the zone beyond the formation zone of the aforementioned aperture portion on aforementioned the 2nd metal level, in the 1st metal level;
With the regulation soup, with the exposed portions serve dissolving and the removal in aforementioned intermediate layer.
2, a kind of evaporation is with the manufacture method of mask, and the deposition material evaporation is adopted on by the evaporation face time, it is characterized in that, comprises following operation:
Use the thin plate raw material, this thin plate raw material is established the intermediate layer with folder between the 1st metal level and the 2nd metal level and is laminated, this intermediate layer by have etch-resistance, the regulation soup has deliquescent material and forms relatively; Aforementioned thin plate raw material is carried out etch processes from a side, and be formed for aperture portion that deposition material is passed through in the residual frame of aforementioned the 2nd metal level portion like that;
With the regulation soup, from a side as hereinbefore, with the exposed portions serve dissolving and the removal in aforementioned intermediate layer;
From a side as hereinbefore, aforementioned thin plate raw material is carried out etch processes, on aforementioned the 1st metal level, in the formation zone of the aperture portion of aforementioned the 2nd metal level, be formed for the aperture portion that deposition material is passed through as desired.
3, a kind of evaporation is with the manufacture method of mask, and the deposition material evaporation is adopted on by the evaporation face time, it is characterized in that, comprises following operation:
Use the thin plate raw material, this thin plate raw material is established the intermediate layer with folder between the 1st metal level and the 2nd metal level and is laminated, this intermediate layer by have etch-resistance, the regulation soup has deliquescent material and forms relatively; Aforementioned thin plate raw material is carried out etch processes from a side or from two sides, form the aperture portion that deposition material is passed through as desired at aforementioned the 1st metal level;
With diaphragm, cover the 1st metal level aforementioned thin plate raw material, that form aforementioned aperture portion with etch-resistance;
The aforementioned thin plate raw material that the protected film of aforementioned the 1st metal level is covered carries out etch processes, and residual frame portion is formed for aperture portion that deposition material is passed through like that in the zone beyond the formation zone of the aforementioned aperture portion on aforementioned the 2nd metal level, in the 1st metal level;
From the 1st metal level of aforementioned thin plate raw material, aforementioned diaphragm is peeled off and removed;
With the regulation soup, with the exposed portions serve dissolving and the removal in aforementioned intermediate layer.
4, use the manufacture method of mask as claim 1 to any one described evaporation in the claim 3, it is characterized in that the aperture portion that forms is a plurality of fine aperture portion with predetermined pattern on aforementioned the 1st metal level.
5, use the manufacture method of mask as claim 1 to any one described evaporation in the claim 3, it is characterized in that the aperture portion that forms on aforementioned the 1st metal level is an integral finish shape aperture portion.
6, use the manufacture method of mask to any one the described evaporation in the claim 3 as claim 1, it is characterized in that, to on aforementioned the 1st metal level and aforementioned the 2nd metal level, form the sheet member of aperture portion respectively, according to a mode, with an engage sides of support along an one axial tension power.
7, use the manufacture method of mask as claim 1 to any one described evaporation in the claim 3, it is characterized in that aforementioned the 2nd metal layer thickness of aforementioned thin plate raw material is greater than aforementioned the 1st metal layer thickness.
8, use the manufacture method of mask to any one the described evaporation in the claim 3 as claim 1, it is characterized in that, the intermediate layer of aforementioned thin plate raw material is formed by titanium, the exposed portions serve in this intermediate layer is used the stripper solution dissolving and the removal of ammonium fluoride class or caustic soda class.
9, use the manufacture method of mask as claim 1 to any one described evaporation in the claim 3, it is characterized in that the intermediate layer of aforementioned thin plate raw material is formed by resin material, the exposed portions serve in this intermediate layer is used the dissolving of film liquid and the removal of caustic soda.
10, a kind of evaporation mask, this evaporation being used, is characterized in that with mask it is that this following layer is meant by the following folded layer by layer sheet member that forms when the deposition material evaporation is on by the evaporation face:
The evaporation metal level is formed for aperture portion that deposition material as desired passed through by etching at this evaporation on metal level, and this evaporation with metal level with by evaporation face fluid-tight engagement;
The supporting metal level, on this supports with metal level, in this evaporation in the zone beyond the formation zone of the aforementioned aperture portion of metal level residual frame portion be formed for aperture portion that deposition material is passed through like that, this supporting is supported aforementioned evaporation metal level with metal level in the mode of enhancing;
The intermediate layer, being partly dissolved and being removed with the aforementioned aperture portion of metal level is corresponding in this intermediate layer with this supporting, this intermediate layer is used between the metal level with metal level and aforementioned evaporation between this supporting.
11, evaporation mask as claimed in claim 10 is characterized in that, being formed at aforementioned evaporation is a plurality of fine aperture portion with predetermined pattern with the aperture portion of metal level.
12, evaporation mask as claimed in claim 10 is characterized in that, the aperture portion that is formed at aforementioned the 1st metal level is an integral finish shape aperture portion.
13, as claim 10 any one described evaporation mask to the claim 12, it is characterized in that, according to only along the mode of an axial tension power of aforementioned sheet member, in aforementioned supporting metal level side, splice holder.
14, as claim 10 any one described evaporation mask to the claim 12, it is characterized in that aforementioned the 2nd metal layer thickness of aforementioned sheet member is greater than aforementioned the 1st metal layer thickness.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003201445A JP2005042147A (en) | 2003-07-25 | 2003-07-25 | Method of producing mask for vapor deposition, and mask for vapor deposition |
| JP2003201445 | 2003-07-25 |
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| Publication Number | Publication Date |
|---|---|
| CN1578547A true CN1578547A (en) | 2005-02-09 |
| CN100461494C CN100461494C (en) | 2009-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100475492A Expired - Fee Related CN100461494C (en) | 2003-07-25 | 2004-05-21 | Mask for vapor deposition and manufacturing method thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2005042147A (en) |
| KR (1) | KR100704688B1 (en) |
| CN (1) | CN100461494C (en) |
| TW (1) | TWI242048B (en) |
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- 2004-04-30 KR KR1020040030378A patent/KR100704688B1/en not_active Expired - Fee Related
- 2004-05-21 CN CNB2004100475492A patent/CN100461494C/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI242048B (en) | 2005-10-21 |
| TW200504234A (en) | 2005-02-01 |
| CN100461494C (en) | 2009-02-11 |
| KR100704688B1 (en) | 2007-04-10 |
| JP2005042147A (en) | 2005-02-17 |
| KR20050013064A (en) | 2005-02-02 |
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