CN1567478A - Device and method for generating update clock with changing capacitance value of storage capacitor - Google Patents
Device and method for generating update clock with changing capacitance value of storage capacitor Download PDFInfo
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- CN1567478A CN1567478A CN 03145214 CN03145214A CN1567478A CN 1567478 A CN1567478 A CN 1567478A CN 03145214 CN03145214 CN 03145214 CN 03145214 A CN03145214 A CN 03145214A CN 1567478 A CN1567478 A CN 1567478A
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Abstract
The present invention provides a method for generating a refresh clock of a Dynamic Random Access Memory (DRAM) chip. The dynamic random access memory chip comprises a plurality of memory cells (memory cells), and each memory cell comprises a storage capacitor. The generation method comprises 1) providing a redundant capacitor, wherein the redundant capacitor is positively correlated with the storage capacitor; and 2) generating a refresh clock according to the redundant capacitor. Wherein the refresh interval of the refresh clock is approximately proportional to the capacitance of the redundancy capacitor. The invention can save the electric energy consumed by the updating action.
Description
(1) technical field
(dynamic random access memory, the method for update time DRAM) and device refer to a kind ofly according to the environment temperature difference the relevant a kind of adjustment dynamic RAM of the present invention especially, and produce method and the device of different update times.
(2) background technology
DRAM is that integrated level is higher in all solid state device storeies, and is relatively more cheap, and pretty good a kind of of reading speed.Therefore, widely be used in appliance and electronic in.Yet it is that number with the quantity of electric charge comes representative data that DRAM has the storage unit of a kind of feature: DRAM, and electric charge wherein can be passed along with the time.The main cause of its electric leakage is the reverse blas leakage current that the PN of the NMOS in the DRAM storage unit connects face.Therefore, the storage unit of each DRAM, every through after the regular hour, just must upgrade the data of wherein being stored, to avoid data to run off, this action is called renewal (refresh), should then be called the regular hour to upgrade (refreshinterval) at interval.In other words, even if DRAM does not carry out reading of data with the IC in the external world, be under the pattern of standby (stand-by), DRAM upgrades at interval every one, still must consume certain electric energy and upgrade.Scrutable is that if it is short more to upgrade the interval, DRAM is just big more because upgrade the power that is consumed.
Yet, when DRAM is used for the electronic product (such as PDA) of Portable (portable), the power that it consumes of just having to be devoted to reduce.Because the spendable finite energy of portable electronic product, majority is provided by the battery of following, and therefore, in order to prolong the time of its use, the power that electronic component consumed wherein is low more good more.DRAM is no exception.So, how to reduce the power that DRAM consumes, particularly upgrade the power consumed, the important problem when just becoming research and development DRAM.
(3) summary of the invention
In view of this, fundamental purpose of the present invention is to produce an appropriate renewal interval, so that DRAM upgrades.Like this, can avoid unnecessary, the too short renewal redundant power loss that causes at interval.
According to above-mentioned purpose, the present invention proposes a kind of dynamic RAM (dynamic randomaccess memory, DRAM) production method of one of chip (chip) renewal clock pulse (refresh clock).This dram chip includes a plurality of storage unit (memory cell), and each storage unit includes a memory capacitance.This production method includes 1) redundant capacitor is provided, this redundant capacitor and this memory capacitance are positive correlation; And 2), produce one and upgrade clock pulse according to this redundant capacitor.It is proportional wherein should to upgrade update pulse capacitance about at interval and this redundant capacitor.
The present invention provides one in a kind of dynamic random access memory chip to upgrade the clock pulse generation device in addition.This dram chip includes a plurality of storage unit, and each storage unit has a memory capacitance.This renewal clock pulse generation device includes a redundant capacitor and a clock pulse generation device.This redundant capacitor and this memory capacitance are proportionate.This clock pulse generation device is coupled to this redundant capacitor, in order to produce this renewal clock pulse.This renewal update pulse roughly is directly proportional with a capacitance of this redundant capacitor at interval.
So-called positive correlation means that the capacitance of this redundant capacitor was also along with increase when the capacitance of memory capacitance increased.Just must not be the increase of equal proportion.
When the memory capacitance in the dram chip along with processing procedure or other factors and when changing, the renewal clock pulse that is produced among the present invention also can change thereupon.Therefore, can produce a more appropriate renewal clock pulse.The purpose that the storage data kept in the storage unit do not run off can be reached on the one hand, wasting power during action updating can be saved again on the other hand.
(4) description of drawings
Fig. 1 is the synoptic diagram of renewal clock pulse generation device of the present invention; And
Fig. 2 is the embodiment that implements with a ring-type oscillator (ring oscillator).
(5) embodiment
For above-mentioned purpose of the present invention, characteristics and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. is elaborated.
The capacitance of the memory capacitance in the DRAM storage unit (capacitor) is big more, and stored electric charge is many more, can experience the time more of a specified duration more and data can not run off, so can adopt longer renewal at interval.So, upgrade the function that can be described as the capacitance of memory capacitance at interval.In other words, be relative to each other.So the present invention utilizes the capacitance of memory capacitance to change the method and apparatus at the renewal interval in the renewal clock pulse automatically.
On manufacture of semiconductor, during along with the memory capacitance in the making storage array (memory array), can locate to make redundant capacitor at peripheral circuit (periphery circuit).In other words, redundant capacitor and memory capacitance are produced synchronously.Variation on the processing procedure, for example (criticaldimension, drift CD) (shift), sedimental thickness are not equal, for the influence of memory capacitance, can have influence on redundant capacitor simultaneously yet for critical dimension.So claim that memory capacitance and redundant capacitor are positive correlation.Such redundant capacitor is in the redundant storage unit (dummy cell) that is positioned over the peripheral circuit place sometimes.Certainly, also can be used as redundant capacitor, more can reflect the situation of general memory capacitance with the unnecessary memory capacitance that does not use in the storage array,
Fig. 1 is the synoptic diagram of renewal clock pulse generation device of the present invention.Upgrade the clock pulse generation device and include a redundant capacitor 10 and a clock pulse generator 12.The renewal update pulse that clock pulse generator 12 is produced will increase along with the capacitance of redundant capacitor 10 and increase at interval.As before described, redundant capacitor 10 is positive correlation with memory capacitance, increases along with the increase of the capacitance of memory capacitance so upgrade the interval.Therefore, renewal clock pulse generation device of the present invention can produce a more appropriate renewal clock pulse, reaches data that keep in the storage unit and the purpose of saving electric energy simultaneously.
Fig. 2 is the embodiment that implements with a ring-type oscillator (ring oscillator).In the ring-type oscillator 14 that odd number reverser (inverter) is connected in series, couple a redundant storage unit (dummy cell) 16 at least in a place as load.Wherein, the grid of the NMOS in the redundant storage unit 16 is coupled to noble potential (VCC), remains on the state of connection (turn on) always.Because the redundant capacitor 10 in the redundant storage unit also becomes the load of one of them reverser simultaneously, so the renewal clock pulse that the ring-type oscillator is produced also can be subjected to the influence of redundant capacitor.If it is big that capacitance becomes, the cycle (be and upgrade at interval) of upgrading clock pulse just becomes big.Like this, upgrade at interval and can adjust along with capacitance automatically.Redundant storage unit (dummy cell) 16 can not be one, can have a plurality of.Or say that the output terminal of each reverser has a redundant storage unit, is used for changing the output load of each reverser, upgrade purpose at interval to reach change.
Redundant storage unit among Fig. 2 (dummy cell) 16 also can be a storage unit (memory cell) that does not use in the storage array, more can reflect the real case of storage array.
Compared to fixedly renewal update interval clock pulse of the prior art, the renewal clock pulse that the present invention produced can change it along with the capacitance variation of memory capacitance to be upgraded at interval, like this, can be under the condition that the data in keeping memory capacitance are not lost, produce a more appropriate renewal clock pulse, save and upgrade required electric energy.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; any person skilled in the art person without departing from the spirit and scope of the present invention; when can making all changes and replacement, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.
Claims (7)
1. one of the dynamic random access memory chip production method that upgrades clock pulse, this dynamic random access memory chip includes a plurality of storage unit, and each storage unit includes a memory capacitance, and this production method includes:
One redundant capacitor is provided, and this redundant capacitor and this memory capacitance are positive correlation; And
According to this redundant capacitor, produce one and upgrade clock pulse;
Wherein, this renewal update pulse is that capacitance with this redundant capacitor is proportionate at interval.
2. production method as claimed in claim 1 is characterized in that, the step that produces this renewal clock pulse includes:
One oscillating circuit is provided, and to produce this renewal clock pulse, wherein, this redundant capacitor is to be the load in this oscillating circuit.
3. production method as claimed in claim 1, wherein, this redundant capacitor be for this memory capacitance one of them.
4. one in the dynamic random access memory chip upgrades the clock pulse generation device, and this dynamic random access memory chip includes a plurality of storage unit, and each storage unit has a memory capacitance, and this renewal clock pulse generation device includes:
One redundant capacitor, itself and this memory capacitance is proportionate;
One clock pulse generation device is coupled to this redundant capacitor, in order to produce this renewal clock pulse;
Wherein, this renewal update pulse is to become positive correlation with a capacitance of this redundant capacitor at interval.
5. renewal clock pulse generation device as claimed in claim 4 is characterized in that, this clock pulse generation device is to be a ring-type oscillator, and this redundant capacitor is the wherein load as this ring-type oscillator.
6. renewal clock pulse generation device as claimed in claim 5 is characterized in that, this renewal clock pulse generation device has a plurality of redundant capacitor, and this ring-type oscillator has a plurality of reversers, and the output terminal of each reverser all is coupled with a corresponding redundant capacitor.
7. renewal clock pulse generation device as claimed in claim 4 is characterized in that, this redundant capacitor be for this memory capacitance one of them.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03145214 CN1567478A (en) | 2003-06-23 | 2003-06-23 | Device and method for generating update clock with changing capacitance value of storage capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03145214 CN1567478A (en) | 2003-06-23 | 2003-06-23 | Device and method for generating update clock with changing capacitance value of storage capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1567478A true CN1567478A (en) | 2005-01-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03145214 Pending CN1567478A (en) | 2003-06-23 | 2003-06-23 | Device and method for generating update clock with changing capacitance value of storage capacitor |
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| CN (1) | CN1567478A (en) |
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2003
- 2003-06-23 CN CN 03145214 patent/CN1567478A/en active Pending
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