CN1540614A - Method of driving organic light emitting diode - Google Patents
Method of driving organic light emitting diode Download PDFInfo
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- CN1540614A CN1540614A CNA031232469A CN03123246A CN1540614A CN 1540614 A CN1540614 A CN 1540614A CN A031232469 A CNA031232469 A CN A031232469A CN 03123246 A CN03123246 A CN 03123246A CN 1540614 A CN1540614 A CN 1540614A
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- emitting diode
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Abstract
The invention provides a method for driving an organic light emitting diode, which is characterized in that when a metal oxide semiconductor transistor connected in series with the organic light emitting diode is conducted to enable the organic light emitting diode to emit light, the voltage of a capacitor connected to the grid electrode of the metal oxide semiconductor transistor is adjusted to enable the metal oxide semiconductor transistor to conduct less current.
Description
Technical field
The present invention is relevant to Organic Light Emitting Diode (organic light emitting diode OLED), refers to a kind of this method of organic light emitting diodes of driving especially.
Background technology
Since have high brightness, fast response speed, with great visual angle, autoluminescence, advantage such as slim, (Organic Light Emitting Diode OLED) becomes one of most popular person in the light-emitting component that constitutes display device to Organic Light Emitting Diode gradually.Organic Light Emitting Diode is a kind of current driving element, by the flow through luminosity (also claiming the GTG value) of this Organic Light Emitting Diode of controlled amount system of electric current of an Organic Light Emitting Diode of adjustment.
Known adjustment is flowed through the size of electric current of an Organic Light Emitting Diode with the method for the luminosity of controlling this Organic Light Emitting Diode, be by adjusting a thin film transistor (TFT) (TFT who is serially connected with this Organic Light Emitting Diode, have the thin advantage of volume) the voltage of gate terminal with the flow through electric current of this Organic Light Emitting Diode of control, and and then control the luminosity of this Organic Light Emitting Diode, the common active display unit that forms of this thin film transistor (TFT) and this Organic Light Emitting Diode.The grid and the potential difference (PD) between source electrode of this thin film transistor (TFT) are big more, and the electric current of this Organic Light Emitting Diode of flowing through is just strong more, and the GTG value that this Organic Light Emitting Diode presented is also just big more; Otherwise the grid and the potential difference (PD) between source electrode of this thin film transistor (TFT) are more little, and the electric current of this Organic Light Emitting Diode of flowing through is just weak more, and the GTG value that this Organic Light Emitting Diode presented is also just more little.
Drive in the luminous process of this Organic Light Emitting Diode at this thin film transistor (TFT), not only the quality of this Organic Light Emitting Diode quality can influence the imaging results of this active display unit, and the life-span length of this thin film transistor (TFT) influences the key factor that can this active display unit operate for a long time especially.See also Fig. 1, Fig. 1 is the circuit diagram of a known active display unit 10.Display unit 10 comprises P type film (PMOS) transistor T
1Reach one and be serially connected with the PMOS transistor T
1Organic Light Emitting Diode 80.The PMOS transistor T
1Source electrode, grid and drain electrode be to be connected to one first voltage source V
Dd, a control voltage source V
cAnd the anode of Organic Light Emitting Diode 80, the negative electrode of Organic Light Emitting Diode 80 then is connected to one second voltage source V
Ss
As control voltage source V
cThe voltage that is produced makes the PMOS transistor T
1When closing, the PMOS transistor T
1Can not produce electric current, and be serially connected with the PMOS transistor T
1Organic Light Emitting Diode 80 also so can be not luminous; Otherwise, as control voltage source V
cThe voltage that is produced is enough to open the PMOS transistor T
1The time, the PMOS transistor T
1Will conducting one make the luminous electric current of Organic Light Emitting Diode 80.Because Organic Light Emitting Diode 80 is exactly to be used for luminous electronic component originally, so the PMOS transistor T
1Can long-term circulation one make the luminous electric current of Organic Light Emitting Diode 80.Whenever the PMOS transistor T
1When having electric current to pass through, the PMOS transistor T
1In charge carrier (hole) can be along one first electric field E
1Direction from the PMOS transistor T
1Source electrode flow to the PMOS transistor T
1Drain electrode, and the hole that has small part in these holes is deposited in the PMOS transistor T
1Source electrode and grid between, if things go on like this, these are deposited in the PMOS transistor T
1Source electrode and the hole between the grid can cause the PMOS transistor T
1Critical voltage V
ThRise.Please refer to formula one,
I
d=K (V
Gs-V
Th)
2(formula one),
Formula one is the PMOS transistor T of flowing through
1Electric current I
dWith the PMOS transistor T
1Grid and the potential difference (PD) V between source electrode
GsAnd PMOS transistor T
1Critical voltage V
ThBetween relational expression.By finding out in the formula one, when the PMOS transistor T
1Grid and the potential difference (PD) V between source electrode
GsWhen constant, the PMOS transistor T of flowing through
1Electric current can be along with the PMOS transistor T
1Critical voltage V
ThRising and reduce.Therefore, be controlled by certain value voltage (PMOS transistor T
1Grid and the current potential between source electrode before V
GsBe certain value) the PMOS transistor T
1The electric current that is circulated can successively decrease along with the disappearance of time, and and then the luminosity that causes Organic Light Emitting Diode 80 more and more a little less than.
Shown active display unit 10 is to comprise a PMOS transistor T among Fig. 1
1, and N type metal-oxide semiconductor (NMOS) transistor also can replace the PMOS transistor T
1Be used for controlling the luminosity of the Organic Light Emitting Diode 80 in the active display unit 10.See also Fig. 2, Fig. 2 is the circuit diagram of known another active light emitting diode 20.Display unit 20 comprises a nmos pass transistor T
2Reach one and be serially connected with nmos pass transistor T
2Organic Light Emitting Diode 82.Nmos pass transistor T
2Source electrode, grid and drain electrode be to be connected to second voltage source V
Ss, control voltage source V
cAnd the negative electrode of Organic Light Emitting Diode 82, the anode of Organic Light Emitting Diode 82 then is connected to first voltage source V
Dd
Similarly, as control voltage source V
cThe voltage that is produced makes nmos pass transistor T
2When closing, nmos pass transistor T
2Can not produce electric current, and be serially connected with nmos pass transistor T
2Organic Light Emitting Diode 82 also so can be not luminous; Otherwise, as control voltage source V
cThe voltage that is produced is enough to open nmos pass transistor T
2The time, nmos pass transistor T
2Will conducting make the luminous electric current of Organic Light Emitting Diode 82.Whenever nmos pass transistor T
2When having electric current to pass through, nmos pass transistor T
2In charge carrier (electronics) can be along one second electric field E
2Direction from nmos pass transistor T
2Source electrode flow to nmos pass transistor T
2Drain electrode, and the electronics that has small part in these electronics is deposited in nmos pass transistor T
2Source electrode and grid between, if things go on like this, these are deposited in nmos pass transistor T
2Source electrode and the electronics between the grid can cause nmos pass transistor T
2Critical voltage V
ThDescend.Please refer to formula two,
I
d=K (V
Gs+ V
Th)
2(formula two),
Formula two is the nmos pass transistor T that flows through
2Electric current I
dWith nmos pass transistor T
2Grid and the potential difference (PD) V between source electrode
GsAnd nmos pass transistor T
2Critical voltage V
ThBetween relational expression.By finding out in the formula two, as nmos pass transistor T
2Grid and the potential difference (PD) V between source electrode
GsWhen constant, nmos pass transistor T flows through
2Electric current can be along with nmos pass transistor T
2Critical voltage V
ThDecline and reduce.Therefore, be controlled by certain value voltage (nmos pass transistor T
2Grid and the current potential between source electrode before V
GsBe certain value) nmos pass transistor T
2The electric current of institute's conducting can successively decrease along with the disappearance of time, and and then the luminosity that causes Organic Light Emitting Diode 82 more and more a little less than.
Summary of the invention
Therefore fundamental purpose of the present invention is to provide a kind of driving method of organic light emitting diodes, to solve the shortcoming of prior art.
According to claim of the present invention, the present invention discloses a kind of driving method of organic light emitting diodes, this method comprises the following step: one first metal-oxide semiconductor (MOS) transistor (a) is provided, and its first end is connected in this Organic Light Emitting Diode, and second end is connected in one first voltage source; (b) provide an electric capacity, its first end is connected in the transistorized grid of this first metal-oxide semiconductor; (c) provide one second metal-oxide semiconductor transistor, its first end is used for importing data, and second end is connected in first end of this electric capacity; (d) open this second metal-oxide semiconductor transistor so that data are transferred to transistorized second end of this second metal-oxide semiconductor by transistorized first end of this second metal-oxide semiconductor; And (e) after execution in step (d), close this second metal-oxide semiconductor transistor, and adjust in regular turn this electric capacity second end voltage to one first current potential and be different from second current potential of this first current potential so that the current potential of first end of this electric capacity is controlled the electric current of this Organic Light Emitting Diode of flowing through.
Because method of the present invention is because of the electric current of the transistorized unlatching conducting of this first metal-oxide semiconductor when luminous at this Organic Light Emitting Diode, change the voltage of second end of the electric capacity that is connected in this first metal-oxide semiconductor transistor meeting grid, with the minimizing transistorized electric current of this first metal-oxide semiconductor of flowing through, so, method of the present invention can reduce the transistorized consume of this first metal-oxide semiconductor, and and then service time of improving this Organic Light Emitting Diode.
Description of drawings
Fig. 1 is the circuit diagram of a known active display unit.
Fig. 2 is the circuit diagram of known another active display unit.
Fig. 3 drives the circuit diagram of the driving circuit of Organic Light Emitting Diode for the present invention one.
Fig. 4 is first sequential chart of first reference voltage source in the shown driving circuit of Fig. 3.
Fig. 5 is second sequential chart of first reference voltage source in the shown driving circuit of Fig. 3.
Fig. 6 is the 3rd sequential chart of first reference voltage source in the shown driving circuit of Fig. 3.
Another drives the circuit diagram of the driving circuit of an Organic Light Emitting Diode to Fig. 7 for the present invention.
Fig. 8 is first sequential chart of first reference voltage source in the shown driving circuit of Fig. 3.
Fig. 9 is second sequential chart of first reference voltage source in the shown driving circuit of Fig. 3.
Figure 10 is the 3rd sequential chart of first reference voltage source in the shown driving circuit of Fig. 3.
Embodiment
Symbol in the accompanying drawing at first is described: 10,20 active display unit; 40,60 driving circuits; 80,82,84,86 Organic Light Emitting Diode C electric capacity; T
1PThe one PMOS transistor T 1PMOS transistor; T
2NThe first nmos pass transistor T2NMOS transistor; V
DdFirst voltage source; V
SsSecond voltage source; V
cControl voltage source.
See also Fig. 3, Fig. 3 drives the circuit diagram of the driving circuit 40 of Organic Light Emitting Diode 84 for the present invention one.Driving circuit 40 comprises one the one PMOS transistor T
1P, one second MOS transistor T
2An and capacitor C.The one PMOS transistor T
1PFirst end be connected in the anode of Organic Light Emitting Diode 84, an and PMOS transistor T
1PSecond end be connected in one first voltage source V
DdFirst end of capacitor C is connected in a PMOS transistor T
1PGrid T
1Pg, and second end of capacitor C is connected in one first reference voltage source V
1refThe second MOS transistor T
2Input end D
InBe used for importing data, the second MOS transistor T
2Output terminal D
OutBe connected in first end of capacitor C, and transistor seconds T
2Control end be connected in one and select voltage source V
ScanThe one PMOS transistor T
1PCan be a thin film transistor (TFT).
The operation of driving circuit 40 of the present invention is described as follows: voltage source V is selected in control
ScanContinue to produce one and open transistor seconds T
2Voltage so that transistor seconds T
2Input end D
InData transferred to transistor seconds T
2Output terminal D
Out(first end of capacitor C) is up to first an end (PMOS transistor T of capacitor C
1PGate terminal T
1Pg) voltage equal the data voltage V of these data
DataTill, at this moment, conducting is in a PMOS transistor T
1PBe used for control the electric current of luminosity of Organic Light Emitting Diode 84 can be along with a PMOS transistor T
1PGate terminal T
1PgVoltage (voltage of first end of capacitor C, data voltage V
Data) difference and change to some extent.That is to say the data voltage V of these data
DataLow more, the voltage of first end of capacitor C is low more, a PMOS transistor T just
1PGate terminal T
1PgAlso low more, the higher PMOS transistor T of voltage
1PGate terminal T
1PgVoltage can make a PMOS transistor T
1PThe electric current that conducting is bigger, and and then make Organic Light Emitting Diode 84 produce light with big luminosity, to reach driving circuit 40 according to these data (data voltage V
Data) size with the function of the luminosity of adjusting Organic Light Emitting Diode 84.
Equal the data voltage V of these data at the voltage of first end of capacitor C
DataAfter, voltage source V is selected in control
ScanProduce one and close transistor seconds T
2Voltage to close transistor seconds T
2, and adjust the first reference voltage source V in regular turn
1refVoltage.Please refer to Fig. 4, Fig. 4 is the first reference voltage source V in the driving circuit 40 of the present invention
1refSequential chart, the first reference voltage source V
1refIn time t
0To time t
2And time t
3To time t
4Produce one first voltage V
1, and in time t
2To time t
3Produce one second voltage V
2, shown t among Fig. 4
0Be simultaneously in or slightly be later than control and select voltage source V
ScanProduce this unlatching transistor seconds T
2The time point of voltage, and shown t among Fig. 4
1Be to equal control to select voltage source V
ScanProduce this and close transistor seconds T
2The time point of voltage.First end of capacitor C and the current potential between second end are worse than time t
1The time be to equal data voltage V
DataDeduct the first voltage V
1, because transistor seconds T
2In time t
1Be to be in closing state afterwards, the electric charge that therefore is stored in first end of capacitor C runs off nowhere, and first end and the potential difference (PD) between second end of capacitor C can keep certain.The first reference voltage source V when second end that is connected in capacitor C
1refIn time t
1To time t
2And time t
3To time t
4Produce the first voltage V
1The time, first end of a capacitor C (PMOS transistor T
11 gate terminal T
1Pg) voltage be to equal data voltage V
Data, on the other hand, as the first reference voltage source V
1refIn time t
2To time t
3Produce the second voltage V
2The time, the voltage of first end of capacitor C is to equal data voltage V
Data+ (the second voltage V
2-the first voltage V
1).Voltage (the second voltage V that is increased at first end of capacitor C
2-the first voltage V
1) equal at a PMOS transistor T
1PSource electrode and gate terminal T
1PgBetween form one and have and electric field E
1The rightabout electric field E of direction
3, electric field E
3Can make and be deposited in a PMOS transistor T
1PSource electrode and gate terminal T
1PgBetween the quantity in hole reduce, to reach protection the one PMOS transistor T
1PPurpose.
The shown first reference voltage source V among Fig. 4
1refSequential chart in the first reference voltage source V
1refBe in time t
2To time t
3Produce the second voltage V that high potential is arranged
2, certainly, the first reference voltage source V
1refAlso can produce the second voltage V in other period
2See also Fig. 5 and Fig. 6, Fig. 5 and Fig. 6 are other two first reference voltage source V
1refSequential chart.According to the shown sequential chart of Fig. 5, the first reference voltage source V
1refBe in time t
1To time t
2Produce the second voltage V
2, and produce the first voltage V in all the other times
1So, in time t
1To time t
2The time by a PMOS transistor T
1PElectric current can be less than time t
2To time t
4By a PMOS transistor T
1PElectric current; According to the shown sequential chart of Fig. 6, the first reference voltage source V
1refBe in time t
3To time t
4Produce the second voltage V
2, and produce the first voltage V in all the other times
1So, in time t
3To time t
4By a PMOS transistor T
1PElectric current can be less than time t
1To time t
3By a PMOS transistor T
1PElectric current.
Because the size of the GTG value that an Organic Light Emitting Diode is presented is the power that is relevant to the electric current of this Organic Light Emitting Diode of flowing through, the electric current of this Organic Light Emitting Diode of flowing through is strong more, the GTG value that this Organic Light Emitting Diode presented is just big more, therefore, the voltage of second end by adjusting capacitor C is with the flow through method of electric current of Organic Light Emitting Diode 84 of change, only can change the luminescence efficiency (luminance efficiency) of Organic Light Emitting Diode 84 at most, and can not change the GTG value that it presents.With first shown among Fig. 4 reference voltage source V
1refSequential chart be example, the luminescence efficiency of Organic Light Emitting Diode 84 of the present invention (the time t that descends
3-time t
2Time)/(t
4-time t
1).
In the driving circuit 40 in order to drive the luminous POMS transistor T of Organic Light Emitting Diode 84
1Also can replace it by a nmos pass transistor.See also Fig. 7, another drives the circuit diagram of the driving circuit 60 of an Organic Light Emitting Diode 86 to Fig. 7 for the present invention.Driving circuit 60 comprises one first nmos pass transistor T
1N, the second MOS transistor T
2And capacitor C.The first nmos pass transistor T
1NFirst end be connected in the negative electrode of Organic Light Emitting Diode 86, and the first nmos pass transistor T
1NSecond end be connected in one second voltage source V
SsFirst end of capacitor C is connected in the first nmos pass transistor T
1NGrid T
1Ng, and second end of capacitor C is connected in one second reference voltage source V
2refThe second MOS transistor T
2Input end D
InBe used for importing data, the second MOS transistor T
2Output terminal D
OutBe connected in first end of capacitor C, and transistor seconds T
2Control end be connected in the selection voltage source V
ScanThe first nmos pass transistor T
1NCan be a thin film transistor (TFT).
The operation of shown driving circuit 60 is operation of driving circuit 40 shown in Fig. 3 among Fig. 7, and difference wherein only is the second reference voltage source V in order to the voltage of first end that changes capacitor C in the driving circuit 60
2refIn the first voltage V
1Be to be higher than the second voltage V
2, its sequential is different from the first reference voltage source V
1refSequential.Please refer to Fig. 8 to Figure 10, Fig. 8 to Figure 10 is the second reference voltage source V in the driving circuit 60 of the present invention
2refSequential chart.The operation of driving circuit 60 is described as follows, and supposes the second reference voltage source V
2refProduce the first voltage V according to the shown sequential chart of Fig. 8
1And the second voltage V
2: voltage source V is selected in control
ScanAt time t
0Continue to produce one and open transistor seconds T
2Voltage so that transistor seconds T
2Input end D
InData transferred to transistor seconds T
2Output terminal D
Out(first end of capacitor C) is up to first end (the first nmos pass transistor T of capacitor C
1NGate terminal T
1Ng) voltage equal the data voltage V of these data
DataTill, at this moment, by the first nmos pass transistor T
1NBe used for control the electric current of luminous intensity of Organic Light Emitting Diode 86 can be along with the first nmos pass transistor T
1NGate terminal T
1NgVoltage (voltage of first end of capacitor C, data voltage V
Data) difference and change to some extent.That is to say the data voltage V of these data
DataHigh more, the voltage of first end of capacitor C is high more, the first nmos pass transistor T just
1NGate terminal T
1NgFirst also high more, the higher nmos pass transistor T of voltage
1NGate terminal T
1NgVoltage can make the first nmos pass transistor T
1NBe able to by bigger electric current, and and then make Organic Light Emitting Diode 86 produce light with big luminosity, to reach driving circuit 60 according to the size of these data function with the luminosity of adjusting Organic Light Emitting Diode 86.
Equal the data voltage V of these data at the voltage of first end of capacitor C
DataAfter, voltage source V is selected in control
ScanAt time t
1Produce one and close transistor seconds T
2Voltage to close transistor seconds T
2, and adjust the second reference voltage source V in regular turn
2refVoltage.First end of capacitor C and the current potential between second end are worse than time t
1The time equal data voltage V
DataDeduct the first voltage V
1, because transistor seconds T
2In time t
1Be to be in closing state afterwards, the electric charge that therefore is stored in first end of capacitor C runs off nowhere, and first end and the potential difference (PD) between second end of capacitor C can keep certain.The second reference voltage source V when second end that is connected in capacitor C
2refIn time t
1To time t
2And time t
3To time t
4Produce the first voltage V
1The time, first end of capacitor C (the first nmos pass transistor T
1NGate terminal T
1Ng) voltage equal data voltage V
Data, on the other hand, as the second reference voltage source V
2refIn time t
2To time t
3Produce the second voltage V
2The time, the voltage of first end of capacitor C equals data voltage V
Data+ (the second voltage V
2-the first voltage V
1).Voltage (the first voltage V that is reduced in first end of capacitor C
1-the second voltage V
2) equal at the first nmos pass transistor T
1PSource electrode (second end) and gate terminal T
1NgBetween shape one have and the rightabout electric field E of the direction of electric field E3
4, electric field E
4Can make and be piled up in the first nmos pass transistor T
1NSource electrode and gate terminal T
1NgBetween electron amount reduce, to reach the protection first nmos pass transistor T
1NPurpose.
Compared to the known drive method of organic light emitting diodes, method of the present invention is because of a PMOS transistor T in Organic Light Emitting Diode 84 (86)
1P(the first nmos pass transistor T
1N) unlatching and the electric current of conducting and when luminous changes and is connected in a PMOS transistor T
1PGate terminal T
1Pg(the first nmos pass transistor T
1NGate terminal T
1Ng) the voltage of second end of capacitor C, with the minimizing PMOS transistor T of flowing through
1P(the first nmos pass transistor T
1N) electric current, to reduce by a PMOS transistor T
1P(the first nmos pass transistor T
1N) consume, and and then promote service time of Organic Light Emitting Diode 84 (86).
The above only is preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (7)
1. method that drives Organic Light Emitting Diode (OLED), it comprises the following step:
(a) provide one first metal-oxide semiconductor (MOS) transistor, its first end is connected in Organic Light Emitting Diode, and second end is connected in one first voltage source;
(b) provide an electric capacity, its first end is connected in the transistorized grid of this first metal-oxide semiconductor;
(c) provide one second metal-oxide semiconductor transistor, its first end is used for importing data, and second end is first end that is connected in this electric capacity;
(d) open this second metal-oxide semiconductor transistor so that data are transferred to transistorized second end of this second metal-oxide semiconductor by transistorized first end of this second metal-oxide semiconductor; And
(e) after execution in step (d), close this second metal-oxide semiconductor transistor, and adjust in regular turn this electric capacity second end voltage to one first current potential and be different from second current potential of this first current potential so that the current potential of first end of this electric capacity is controlled the electric current of this Organic Light Emitting Diode of flowing through.
2. the method for claim 1, wherein this first current potential is lower than this second current potential.
3. the method for claim 1, wherein this first current potential is higher than this second current potential.
4. the method for claim 1, wherein the voltage of second end of adjusting this electric capacity in step (e) is to this second current potential, and the voltage with second end of this electric capacity is adjusted to this first current potential again.
5. the method for claim 1, wherein this first metal-oxide semiconductor transistor is thin film transistor (TFT) (TFT).
6. the method for claim 1, wherein this first metal-oxide semiconductor transistor is a P type metal-oxide semiconductor transistor.
7. the method for claim 1, wherein this first metal-oxide semiconductor transistor is a N type metal-oxide semiconductor transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031232469A CN100367333C (en) | 2003-04-24 | 2003-04-24 | Method of driving organic light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031232469A CN100367333C (en) | 2003-04-24 | 2003-04-24 | Method of driving organic light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1540614A true CN1540614A (en) | 2004-10-27 |
| CN100367333C CN100367333C (en) | 2008-02-06 |
Family
ID=34321249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031232469A Expired - Lifetime CN100367333C (en) | 2003-04-24 | 2003-04-24 | Method of driving organic light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100367333C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100353394C (en) * | 2005-08-10 | 2007-12-05 | 友达光电股份有限公司 | Pixel circuit of display |
| US7864141B2 (en) | 2004-06-22 | 2011-01-04 | Samsung Electronics Co., Ltd. | Display device and a driving method thereof |
| JP2018167429A (en) * | 2017-03-29 | 2018-11-01 | コニカミノルタ株式会社 | Optical writing device and image formation apparatus |
| CN111402792A (en) * | 2019-11-21 | 2020-07-10 | 友达光电股份有限公司 | Light-emitting diode drive circuit and light-emitting diode display panel including the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3767877B2 (en) * | 1997-09-29 | 2006-04-19 | 三菱化学株式会社 | Active matrix light emitting diode pixel structure and method thereof |
| JP2001147659A (en) * | 1999-11-18 | 2001-05-29 | Sony Corp | Display device |
| US6307322B1 (en) * | 1999-12-28 | 2001-10-23 | Sarnoff Corporation | Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage |
| GB0008019D0 (en) * | 2000-03-31 | 2000-05-17 | Koninkl Philips Electronics Nv | Display device having current-addressed pixels |
| TW466466B (en) * | 2000-06-21 | 2001-12-01 | Chi Mei Optoelectronics Corp | Driving circuit of thin film transistor light emitting display and the usage method thereof |
-
2003
- 2003-04-24 CN CNB031232469A patent/CN100367333C/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7864141B2 (en) | 2004-06-22 | 2011-01-04 | Samsung Electronics Co., Ltd. | Display device and a driving method thereof |
| CN100353394C (en) * | 2005-08-10 | 2007-12-05 | 友达光电股份有限公司 | Pixel circuit of display |
| JP2018167429A (en) * | 2017-03-29 | 2018-11-01 | コニカミノルタ株式会社 | Optical writing device and image formation apparatus |
| CN111402792A (en) * | 2019-11-21 | 2020-07-10 | 友达光电股份有限公司 | Light-emitting diode drive circuit and light-emitting diode display panel including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100367333C (en) | 2008-02-06 |
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