CN1470945A - Exposure device, stage device, and device manufacturing method - Google Patents

Abstract

Through the control device, after the exposure of a divided area on the wafer is completed, in order to perform the exposure of the next divided area, the initial reduction mask stage and the wafer stage are aligned in the scanning direction through the stage control system. During the period before the start of deceleration, the setting information of the control parameters for exposure in the next divided area is transmitted to the stage control system. Therefore, the stage control system does not need to temporarily stop the two stages before accelerating in order to obtain the setting information of the exposure control parameters of a divided area from the upper device, so there is no stop time, and the production can be improved accordingly. ability. In this case, there is no hindrance, so the performance of other devices will not be damaged.

Description

Exposure device, stage device, and device manufacturing method

field of invention

The present invention relates to an exposure device, a stage device, and a device manufacturing method, in particular, to an exposure device used in a photolithography process for manufacturing electronic devices such as semiconductor devices and liquid crystal display devices; A stage device for exposing a target object and moving a stage two-dimensionally; and a device manufacturing method using the exposure device.

Background technique

In the past, at the manufacturing site of semiconductor devices, a reduced projection exposure device using the i-line of a mercury lamp with a wavelength of 365 nm as illumination light, a so-called stepper exposure device, was used to mass-produce circuit devices with a minimum line width of about 0.3 to 0.35 μm (64M (mega ) bits of D-RAM, etc.). In the future, the high integration of semiconductor devices is advancing year by year, and correspondingly high-resolution exposure devices have been developed and put into practical use. Scanning stepper exposure device), using the ultraviolet pulse laser with a wavelength of 248nm from the KrF excimer laser or the ultraviolet pulse laser with a wavelength of 193nm from the ArF excimer laser as illumination light, the projection field of view of the reduced projection optical system is relatively One-dimensional scanning of the mask plate or shrink mask plate (hereinafter collectively referred to as “shrink mask plate”) and the photosensitive object wafer with the circuit pattern drawn, so as to repeatedly transfer the shrink mask in an irradiated area on the wafer Scanning exposure operation of the overall circuit pattern of the template and stepping operation between irradiation. According to this scanning exposure apparatus, mass production of circuit devices having an integration level of 256 Mbit D-RAM level and a minimum line width of 0.25 μm can be realized. In addition, the exposure device currently being developed can mass-produce next-generation circuit devices of 1G (gigabit) or more.

However, when the step-and-scan scanning exposure device sequentially transfers the pattern of the reduced mask plate to a plurality of irradiation areas (hereinafter, referred to as "irradiation" for convenience) on the wafer, in order to improve the productivity, it is generally performed alternately. Scan (back and forth) the reduced mask to sequentially expose the next shot. For this reason, after the transfer of an irradiated reduced mask pattern is completed, the reduced mask is moved again from the exposure end point. Acceleration time before the acceleration time + the stabilization time before the speed converges to the target speed within the specified error range after the acceleration is completed) The moving distance is the same, so that the initial contraction mask returns to the scanning start position for the next exposure, corresponding to this , also requires the wafer to be stepped to the next shot (the other shot in the non-scanning direction adjacent to the one above) and moved in the scanning direction.

Such movement of the wafer between irradiations has conventionally been performed in the following order (1) to (3). (1) After the exposure is completed, once the wafer stage (substrate stage) is moved to the same scanning direction coordinate position as the scanning start position of the next irradiation, (2) step in the non-scanning direction to The scan start position of the next shot, (3) start the exposure scan of the next shot. Therefore, the wafer basically moves along a "U"-shaped path. One of the reasons for adopting this route is that between the above (1) and (2), or between the above (2) and (3), or the above (2), the exposure of the next shot needs to be The control information (including the setting information of the control parameters) is transmitted from the host device to the stage control unit (including the synchronization control unit) which controls the stage. Wherein, the above-mentioned control information, for example, includes: the relevant information of the position control of the initial reduction mask stage and the wafer stage; The offset Ox, Oy of the direction, the verticality error w of the stage coordinate system that stipulates the movement of the wafer, the rotation error θ of the wafer, and the set value of the X, Y direction enlargement and reduction (calibration) error rx, ry) of the wafer (These are the data used to determine the position of the wafer during exposure); Correction parameters related to the position of the two stages during exposure (for example, the bending information of the moving mirror on the side of the reticle stage or the wafer stage); And the data related to exposure control, for example, the pulse energy density of the excimer laser, the number of pulse light emission and other data; and even the set exposure program data, etc. Depending on the situation, error information of each mechanism when the stage is moved is also included.

However, as an exposure device, the improvement of productivity (processing capacity) is the most important issue. From the viewpoint of satisfying this requirement, the acceleration and deceleration of the initial contraction mask during scanning exposure is, for example, 0.5G→4G, and the maximum The speed should be 350mm/s→1500mm/s. Correspondingly, the acceleration and deceleration and the maximum speed of the scanning exposure of the wafer stage should be values proportional to the projection magnification. Therefore, the required pre-scan and over-scan movement distances before and after exposure also need to be extended accordingly.

Therefore, the acceleration/deceleration and the maximum speed are increased to improve the productivity, but the productivity may deteriorate as a result.

Under such background conditions, the development of a new exposure device that can improve productivity while maintaining other performances of the device is always an urgent task today.

If at least one of the parallel processing of the above-mentioned pre-scanning and overscanning operations and the above-mentioned stepping operation between the irradiation of the wafer stage and the shortening of the movement distance of the wafer stage can be realized, it is possible to increase the throughput. .

However, if the above parallel processing is easy to perform and the moving path shortens the moving distance, it may deteriorate the synchronization accuracy of the shrink mask stage and the wafer stage, making it difficult to expose with sufficient precision, or making the exposure The synchronization stabilization time of the previous two stages may increase, or the transmission of the above-mentioned control information may become difficult.

Contents of the invention

In view of the above circumstances, a first object of the present invention is to provide an exposure apparatus capable of improving productivity without impairing other apparatus performance.

A second object of the present invention is to provide a stage device capable of suppressing power usage of a drive system of the stage while improving productivity.

A third object of the present invention is to provide a device manufacturing method capable of improving device productivity.

According to the first exposure device provided by the first viewpoint of the present invention, the mask plate and the object are moved synchronously in a predetermined scanning direction, and the pattern of the mask plate is sequentially transferred to a plurality of divided areas on the object, and has: The mask stage supports the above-mentioned mask and can move at least in the above-mentioned scanning direction; the object stage supports the above-mentioned object and can move in a two-dimensional plane; the stage control system controls the above-mentioned two stages and the control device, after the exposure of the above-mentioned one divided area at the latest, to the exposure of the next divided area, through the above-mentioned stage control system, the deceleration of the above-mentioned two stages in the above-mentioned scanning direction starts In the preceding period, setting information of control parameters necessary for exposure of at least the next divided area is transmitted to the above-mentioned stage control system.

In this way, through the control device, after the exposure of a divided area on the opposite object is completed at the latest, in order to perform the exposure of the next divided area, the above-mentioned two stages (reticle stage and During the period before the object stage) starts to decelerate in the scanning direction, at least the setting information of the exposure control parameters of the next divided area is transmitted to the stage control system. Therefore, between the end of the exposure of one divided area on the object and before the synchronous stabilization period of the two stages required for the exposure of the next divided area, it is possible to use the method of not stopping the two stages. The control program for the two stages created by the stage control system. That is, the stage control system does not need to temporarily stop the two stages before accelerating in order to obtain the setting information of the exposure control parameters for unloading a divided area from the upper device, so there is no stop time, and the production can be improved accordingly. ability. In this case, there is no hindrance, so the performance of other devices will not be damaged. Also, in this case, the stage control system may start the synchronous control operation of the two stages from the start of the related deceleration in the above-mentioned scanning direction.

In this case, the control device may transmit the setting information to the stage control system when exposing the one divided area.

The control device may transmit setting information of control parameters necessary for exposure of the next and subsequent plurality of divided regions when transmitting the setting information after exposing the one divided region.

In the first exposure apparatus of the present invention, the stage control system can end the positions of the two stages according to the setting information before the synchronization stabilization period of the two stages before the exposure of the next divided area. set up. In this way, the time required for the synchronization and stabilization of the two stages before the above-mentioned exposure can be shortened, so that the throughput can be further improved.

In the above-mentioned stage control system of the first exposure apparatus of the present invention, between the divided areas in the same row in the non-scanning direction perpendicular to the above-mentioned scanning direction, after the exposure of one divided area is completed, after the end of the above-mentioned exposure Before starting to decelerate, ensure that the above-mentioned two stages move at a constant speed in the above-mentioned scanning direction during the post-stabilization period. When moving between different rows, the deceleration of the above-mentioned two stages can be started immediately after the exposure of a divided area is completed. .

According to the second exposure device provided by the second viewpoint of the present invention, the mask plate and the object are moved synchronously in a predetermined scanning direction, and the pattern of the mask plate is sequentially transferred to a plurality of divided areas on the object, and has: The mask stage supports the above-mentioned mask and can move at least in the above-mentioned scanning direction; the object stage supports the above-mentioned object and can move in a two-dimensional plane; the stage control system controls the above-mentioned two stages and the control device, after the exposure of the final divided area in any row in the non-scanning direction perpendicular to the above-mentioned scanning direction on the above-mentioned object is completed, to the exposure of the initial divided area in order to carry out other rows, controlled by the above-mentioned stage While the system is controlling the movement of the two stages, it transmits the setting information of the control parameters required for the exposure of the plurality of divided areas in the other row to the stage control system.

Wherein, the concept of "movement control of two stages" includes stop control of at least one stage.

In this way, through the control device, after the exposure of the final divided area in any row on the object in the non-scanning direction is completed, in order to perform the exposure of the first divided area of other lines, the two stages are controlled by the stage control system. During the movement control period, the setting information of the exposure control parameters of multiple divided areas in other rows can be transmitted to the above-mentioned stage control system. Therefore, even if the time from the end of the exposure of one divided area on the object to the start of deceleration of the two stages is short, the setting information of the control parameters required for the exposure of the next divided area is transmitted during this period. When it is difficult, it is also possible to use the two-stage control system made by the stage control system that makes the two stages not stop before the synchronization and stabilization period of the two stages required for the exposure of the next divided area after the above-mentioned exposure is completed. The control program of the stage. Therefore, there is no need to temporarily stop the two stages before acceleration, so there is no stop time, and productivity can be improved accordingly. In this case, there is no hindrance, so the performance of other devices will not be damaged. Also, in this case, the stage control system may start the synchronous control operation of the two stages from the above-mentioned relative deceleration in the scanning direction.

In this case, the stage control system may end the positioning of the two stages according to the above-mentioned setting information before the synchronization and stabilization period of the two stages before the exposure of each divided area of the other row is started. set up. In this way, it is possible to shorten the time required for the synchronization and stabilization of the two stages before the exposure of each divided area of the next row is started, so that the throughput can be further improved.

According to the third exposure device provided by the third viewpoint of the present invention, the mask plate and the object are moved synchronously in a predetermined scanning direction, and the pattern of the mask plate is sequentially transferred to a plurality of divided areas on the object, and has: The mask stage supports the above-mentioned mask and can move at least in the above-mentioned scanning direction; the object stage supports the above-mentioned object and can move in a two-dimensional plane; the stage control system controls the above-mentioned two stages and the control device, after the detection action of the arrangement information required for position matching with the specified points of each divided area on the above-mentioned object is completed, and during the period before the exposure of the No. 1 divided area starts, the above-mentioned on the above-mentioned object The setting information of the control parameters required for all the exposures of the plurality of divided areas is sent to the above-mentioned stage control system.

In this way, through the control device, the setting information of the control parameters required for all the exposures of the plurality of divided areas on the object can be used to perform the detection operation of the arrangement information required for position matching with the specified points of each divided area on the object. After the end, the period until the exposure of the No. 1 divided area starts is sent to the stage control system. Therefore, during the exposure process after the exposure start of the No. 1 divided area, it is not necessary to transmit the setting information of the above-mentioned control parameters. During the period until the end of exposure, a control program for both stages created by the stage control system that does not stop the two stages can be used. Therefore, productivity can be improved. In this case, there is no hindrance, so the performance of other devices will not be damaged.

In this case, the above-mentioned stage control system can cause each divided area on the above-mentioned object to end the synchronization of the two stages corresponding to the above-mentioned setting information before the synchronization and stabilization period of the above-mentioned two stages before exposure. location settings. In this way, the time required for the synchronization and stabilization of the two stages before each divided area on the object starts to be exposed can be shortened, so that the throughput can be further improved.

In the above-mentioned first to third exposure devices, the control parameters may include parameters related to the arrangement of the divided regions measured before exposure, and the setting information may include, taking into account the division of the stage coordinate system due to the relative regulation Information on the movement amount correction value between divided areas due to the arrangement error of the area.

In this case, the arrangement error of the above-mentioned divided regions may include: the rotation error of the above-mentioned object, the verticality error of the stage coordinate system that specifies the movement of the above-mentioned object, the offset of the above-mentioned object on the stage coordinate system, the above-mentioned At least one of zoom-in and zoom-out errors of the object.

In addition, in the first to third exposure apparatuses of the present invention, the stage control system is configured such that, between the divisional areas in the same row in the non-scanning direction perpendicular to the scanning direction, between the two stages in the scanning direction When performing acceleration walking after deceleration, the above-mentioned two stages can be controlled according to the command value obtained from the acceleration rate curve after inversion of the polarized code.

In this case, when the above-mentioned stage control system moves the above-mentioned two stages in the above-mentioned scanning direction between the divided areas of the lines with different non-scanning directions, it can The instruction value obtained from the curve controls the above-mentioned object stage, or the above-mentioned object stage control system is parallel to the above-mentioned walking aid action between the above-mentioned divided areas of the above-mentioned two stages in the above-mentioned scanning direction, and can be based on at least 2 poles Command values obtained by summing the acceleration curves after four polarizations of different shapes are used to perform a moving operation between divided areas for moving the object stage in the non-scanning direction.

According to the fourth exposure device provided by the fourth viewpoint of the present invention, the reticle and the object are moved synchronously in a predetermined scanning direction, and the pattern of the reticle is sequentially transferred to a plurality of divided areas on the object, and has: A mask stage, supporting the above mask, can move at least in the above scanning direction; an object stage, supporting the above object, can move in a two-dimensional plane; and a stage control system, controlling the above two objects At the same time, after the exposure of a divided area on the above-mentioned object is completed, when the above-mentioned two-stages are decelerated in the above-mentioned scanning direction, the synchronous control of the above-mentioned two-stages required for the exposure of the next divided area is started. .

In this way, the stage control system that controls the above-mentioned two stages, after the exposure of a divided area on the object is completed, when the two stages are decelerated in the above-mentioned scanning direction, it is necessary to start the exposure of the next divided area. Synchronous control of the two stages. Therefore, for example, the synchronization control of the two stages before the start of exposure can be completed earlier than when the synchronization control is started immediately after the deceleration of the two stages is completed, the synchronization stabilization time can be shortened, and the throughput can be improved. In this case, there is no hindrance, so the performance of other devices will not be damaged.

According to the fifth exposure device provided by the fifth viewpoint of the present invention, the reticle and the object are moved synchronously in a predetermined scanning direction, and the pattern of the reticle is sequentially transferred to a plurality of divided areas on the object, and has: A mask stage, supporting the above mask, can move at least in the above scanning direction; an object stage, supporting the above object, can move in a two-dimensional plane; and a stage control system, controlling the above two objects At the same time, between the divided areas in the same row in the non-scanning direction perpendicular to the scanning direction, when the above-mentioned two stages are decelerated in the scanning direction and then accelerated in the walking-assistance action, according to the polarized The instruction value obtained from the acceleration rate curve after coding inversion is used to control the above two stages.

In this way, by controlling the stage control system of the above two stages, between the divided areas in the same row in the non-scanning direction perpendicular to the scanning direction, the two stages are decelerated in the scanning direction and then accelerated. , the above two stages can be controlled according to the command value obtained from the acceleration rate curve after the polarized code is reversed. That is, the acceleration curve of the object stage (and mask stage) at this time is trapezoidal, so the change in velocity is constant, there is no period when the velocity is zero, and so-called alternate scanning can be performed, so the above-mentioned walking aid can be shortened The time required for the action. In addition, in this case, the peak value of the above-mentioned jerk curve (the maximum value of the absolute value of the jerk (jerk rate) that is the time rate of change of acceleration) can be suppressed, so the difference between the maximum acceleration and the average value of the acceleration of the object stage can be reduced. Ratio, and at the same time can suppress the rapid change of acceleration and its frequency. Therefore, the productivity can be improved while suppressing the power consumption of the drive system of the object stage (and the mask stage), such as linear motors. In this case, there is no hindrance, so the performance of other devices will not be damaged.

In this case, the above-mentioned jerk curve after inversion of the polarized code may have a different shape.

In this case, the stage control system may set the post-stabilization period during which the two stages move at a constant speed after the exposure to the divided area is finished and before the deceleration starts to be longer than the two stages before the exposure starts. During the synchronous stabilization period of the object stage, at the same time, the peak value of the acceleration rate curve after the end of the exposure of the divided area is set to be greater than the peak value of the acceleration rate curve before the exposure starts. In this way, the acceleration end positions of the two stages can be made consistent with the specified target position, and the control hysteresis at the acceleration end position and the synchronization error of the two stages caused by this can be suppressed, so the synchronization stability before exposure can be shortened. time.

In the fifth exposure apparatus of the present invention, the jerk curves after inversion of the polarized codes may have the same shape.

In the above-mentioned stage control system of the fifth exposure apparatus of the present invention, when the above-mentioned two stages are moved in the above-mentioned scanning direction between the divisional areas of the lines different in the above-mentioned non-scanning direction, it can be based on the quadrupole The command value obtained from the transformed acceleration rate curve is used to control the above-mentioned object stage.

In this case, the above-mentioned four-polarized jerk curve may have a shape in which at least two extreme values are different.

In the fifth exposure apparatus of the present invention, the stage control system is parallel to the walking assist operation between the divided areas in the scanning direction of the two stages, and can be based on a total of quadrupoles whose shapes are different according to at least two poles. The movement operation between the divided areas for moving the object stage in the non-scanning direction is performed using the command value obtained from the converted acceleration rate curve.

According to the sixth exposure device provided by the sixth viewpoint of the present invention, the reticle and the object are moved synchronously in a predetermined scanning direction, and the pattern of the reticle is sequentially transferred to a plurality of divided areas on the object, and has: A mask stage, supporting the above mask, can move at least in the above scanning direction; an object stage, supporting the above object, can move in a two-dimensional plane; and a stage control system, controlling the above two objects At the same time, between the divided areas in the same row in the non-scanning direction perpendicular to the above-mentioned scanning direction, after the exposure to a divided area is completed, it is possible to ensure that the above-mentioned two stages are in the above-mentioned position before starting to decelerate after the above-mentioned exposure. During the stable period after moving at a constant speed in the scanning direction, when moving between different rows, the deceleration of the above two stages can be started immediately after the exposure of a divided area ends.

In this way, the stage control system, between the divided areas in the same row in the non-scanning direction perpendicular to the above-mentioned scanning direction, after the exposure to a divided area is completed, the above-mentioned two loads can be ensured before starting to decelerate after the above-mentioned exposure. During the post-stabilization period during which the object table moves at a constant speed in the scanning direction, when moving between different rows, the deceleration of the two object stages can be started immediately after the exposure to the above-mentioned one divided area is completed. Thus, there is no post-stabilization period as described above when moving between rows, with a corresponding increase in throughput. In this case, there is no hindrance, so the performance of other devices will not be damaged.

The above-mentioned stage systems of the first to sixth exposure apparatuses of the present invention control the two stages so that after the exposure of one divided area on the above-mentioned object is completed, the above-mentioned The walking-assistance action in which the two stages are decelerated in the scanning direction and then accelerated, and the moving action between the divided areas in which the object stage moves in the non-scanning direction perpendicular to the scanning direction can be performed simultaneously and in parallel, and the The movement of the object stage in the non-scanning direction is completed before the synchronization stabilization period of the two stages before the exposure of the next divided area. In this way, after the exposure of a divided area on the above-mentioned object is completed, in order to perform the exposure of the next divided area, the above-mentioned two stages are decelerated in the above-mentioned scanning direction and then accelerated. At least a part of the moving actions between the divided areas moving in the scanning direction can overlap, so after the movement of the object stage between the above-mentioned divided areas in the non-scanning direction is completed, the acceleration of the two stages in the scanning direction is started. Compared with the occasion of action, the production capacity can be improved. In addition, when the walking-assisting action of the two stages in the scanning direction ends, the movement of the object stage between the above-mentioned divided areas in the non-scanning direction ends, so the stage control system can only perform two steps during the synchronization and stabilization period. Synchronous adjustment of the stage, so the stabilization period can be shortened.

According to the seventh exposure device provided by the seventh viewpoint of the present invention, the reticle and the object are moved synchronously in a predetermined scanning direction, and the pattern of the reticle is sequentially transferred to a plurality of divided areas on the object, and has: a reticle stage supporting said reticle and capable of moving at least in said scanning direction; two object stages each supporting said object and capable of independently moving in a two-dimensional plane; and a stage control system , in parallel with the prescribed processing performed on any one of the above-mentioned object stages, when exposing a plurality of divided regions on an object supported by another object stage, in the non-scanning direction perpendicular to the above-mentioned scanning direction Between the divided areas in the same row, when the above-mentioned mask stage and the above-mentioned another object stage are decelerated in the above-mentioned scanning direction and then accelerate the walking action, according to the acceleration rate curve after inversion according to the polarized code The obtained command value controls the above-mentioned other object stage.

In this way, in parallel with the predetermined processing performed on any one of the above-mentioned object stages, when exposing a plurality of divided regions on an object supported by another object stage, through the stage control system, the Between the divided areas in the same row in the non-scanning direction of the scanning direction, when the mask stage and another object stage decelerate in the scanning direction and then perform an accelerated walking action, according to the polarized code after inversion These stages (reticle stage and other object stage) are controlled using command values obtained from the acceleration rate curve. That is, the acceleration curve of the other object stage (and mask stage) at this time is trapezoidal, so the change in velocity is constant, there is no period when the velocity is zero, and so-called alternate scanning can be performed, so it can be shortened. The time required for the walking aid described above. In addition, in this case, the peak value of the above-mentioned jerk curve (the maximum value of the absolute value of the jerk (jerk rate) that is the time change rate of acceleration) can be suppressed, so the average value of the maximum acceleration relative to the acceleration of the other object stage can be reduced. The ratio of the value can suppress the sharp change of acceleration and its frequency at the same time. At this time, each of the above-mentioned one object stage and the other object stage is arbitrary. Therefore, the same parallel processing can be performed by switching the two stages.

Therefore, the productivity can be improved while suppressing the power consumption of the drive system of each object stage (and mask stage), such as linear motors. In this case, there is no hindrance, so the performance of other devices will not be damaged.

In this case, the stage control system may, when the reticle stage and the other stage move in the scanning direction between the divided areas of the rows in the non-scanning direction, according to The instruction value obtained from the acceleration rate curve after four polarizations is used to control the above-mentioned another object stage.

In the seventh exposure apparatus of the present invention, the stage control system parallelizes the walk-assist operations between the reticle stage and the other stage between the divided regions in the scanning direction, and can be based on at least two The extremum is a command value obtained by summing up four-polarized acceleration curves of different shapes, and a moving operation is performed between divided regions for moving the other object stage in the non-scanning direction.

In the seventh exposure apparatus of the present invention, the above-mentioned predetermined processing on the side of one stage performed in parallel with the exposure operation on the above-mentioned other stage can be regarded as various processing. For example, when there is also a mark detection system that detects a mark formed on the above-mentioned object, the above-mentioned prescribed processing may include: a mark detection process that uses the above-mentioned mark detection system to detect a mark formed on an object placed on any one of the above-mentioned objects on the stage.

According to the eighth exposure device provided by the eighth viewpoint of the present invention, the mask plate and the object are moved synchronously in a predetermined scanning direction, and the pattern of the above mask plate is sequentially transferred to a plurality of divided areas on the above object, and has: A mask stage, supporting the above mask, can move at least in the above scanning direction; an object stage, supporting the above object, and can move in a two-dimensional plane; and a stage control system, controlling the above two The object stage, wherein, the above-mentioned stage control system, between the divided areas in the same row in the non-scanning direction perpendicular to the above-mentioned scanning direction, after the exposure to one divided area is completed, the above-mentioned two stages in the above-mentioned scanning direction During the post-stabilization period of the constant speed movement, the moving operation in the scanning direction and the moving operation in the non-scanning direction are performed simultaneously and in parallel on the object stage.

In this way, the stage control system performs the following control, so that between the divided areas in the same row in the non-scanning direction, the moving action in the scanning direction and the moving action in the non-scanning direction are moved in parallel at the same time, and the exposure to one divided area is completed. Finally, the post-stabilization period (uniform overscanning) of the two stages moving at a constant speed in the scanning direction starts on the object stage, so the acceleration and deceleration control generated in the non-scanning direction can be ended early, and the amount of advance is the Post-stabilization period (uniform overscan). In this way, before the synchronous control in the scanning direction required for the exposure of the next divided area starts, the stepping in the non-scanning direction can be completed. Therefore, the stage control system can Only the synchronous control of the scanning direction can be performed. In addition, when performing synchronous control, there is basically no deceleration effect in the non-scanning direction, so the synchronous stabilization time and the corresponding constant speed overscanning time (post-settling time) can be shortened. Therefore, productivity can be improved. In this case, there is no hindrance, so the performance of other devices will not be damaged.

In this case, the stage control system may perform the simultaneous parallel moving operation on the object stage before the start of the synchronization stabilization period of the two stages before exposure to the next divided area.

The stage control system may control the object stage so that the movement in the non-scanning direction ends before the synchronous stabilization period starts.

The above-mentioned stage control system may start the above-mentioned simultaneous and parallel moving operation on the above-mentioned object stage immediately after the exposure to the above-mentioned one divided area is completed.

The stage device provided according to the ninth aspect of the present invention has: a stage for supporting objects and capable of moving in a two-dimensional plane; and a stage control system for controlling the stage so that The moving operation of the stage in the first axial direction, which is accelerated after being decelerated in the predetermined first axial direction, and the moving operation of the second axial direction in the second axial direction perpendicular to the first axial direction are performed simultaneously in parallel, and simultaneously , when performing the moving operation in the first axis direction, the stage is controlled according to the command value obtained according to the acceleration rate curve after the polarized code is reversed.

In this way, through the stage control system, the stage moves in the first axis direction after being decelerated in the first axis direction and then accelerated, and the second axis direction movement operation in the second axis direction perpendicular to the first axis direction. Simultaneously, the stage moves along a U-shaped or V-shaped trajectory. At this time, when the stage moves in the first axis direction, it is controlled based on the command value obtained from the jerk curve after inversion of the polarized code. At this time, the acceleration curve of the stage is trapezoidal, so the change in velocity is constant, and there is no period in which the velocity is zero, thereby reducing the time required for the movement operation in the first axis direction. In addition, since the peak value of the above-mentioned jerk curve can be suppressed, the ratio of the maximum acceleration to the average value of the stage's acceleration can be reduced, and rapid changes in acceleration and their frequency can be suppressed. Therefore, the productivity can be improved, and the electric power used by the driving system of the stage, such as a linear motor, can be suppressed.

The stage control system may control the stage based on a command value obtained by summing up four polarized acceleration curves with at least two extreme values having different shapes when performing the moving operation in the second axis direction.

In addition, in the photolithography process, by performing exposure using any one of the first to eighth exposure apparatuses of the present invention, it is possible to transfer the pattern of the mask plate to each divided area on the wafer W with high throughput. As a result, the production efficiency of highly integrated devices can be improved. Therefore, according to still another viewpoint of the present invention, a device manufacturing method using any one of the first to eighth exposure apparatuses of the present invention can be provided.

Description of drawings

FIG. 1 is a configuration diagram schematically showing an exposure apparatus according to a first embodiment of the present invention.

FIG. 2A is a plan view showing the relationship between the slit-shaped illumination area and the irradiation area S on the wafer inscribed in the effective field of view of the projection optical system.

FIG. 2B is a graph showing the relationship between stage movement time and stage velocity.

FIG. 3 is a flowchart showing a processing algorithm of the main controller 50 in FIG. 1 .

FIG. 4 is a diagram showing a moving locus of the center of the illumination slit when exposing a plurality of shot regions on a wafer with the exposure apparatus according to the first embodiment.

FIG. 5 is a locus diagram showing that the center P of the illumination slit St on the wafer passes through each shot area when the shot areas S1 , S2 , and S3 are sequentially exposed.

Fig. 6A is a graph showing the acceleration rate of the wafer stage when the movement operation in the first mode is performed.

FIG. 6B is a graph showing the acceleration of the wafer stage when the movement operation in the first mode is performed.

FIG. 6C is a graph showing the speed of the wafer stage when the movement operation in the first mode is performed.

FIG. 6D is a graph showing the displacement of wafer stage WST when the movement operation in the first mode is performed.

FIG. 7A is a graph showing the acceleration rate of the wafer stage of a conventional exposure apparatus (conventional apparatus).

Fig. 7B is a graph showing the acceleration of the wafer stage of the conventional device.

Fig. 7C is a graph showing the speed of the wafer stage of the conventional device.

FIG. 7D is a graph showing the displacement of wafer stage WST in the conventional apparatus.

FIG. 8A is a graph showing the acceleration rate of the wafer stage when the movement operation in the second mode is performed.

Fig. 8B is a graph showing the acceleration of the wafer stage when the movement operation in the second mode is performed.

FIG. 8C is a graph showing the speed of the wafer stage when the moving operation in the second mode is performed.

FIG. 8D is a graph showing the displacement of wafer stage WST when the moving operation in the second mode is performed.

FIG. 9A is a graph showing relative acceleration rates in the scanning direction of the wafer stage in the first scanning acceleration control method.

FIG. 9B is a graph showing relative acceleration of the wafer stage in the scanning direction.

FIG. 9C is a graph showing relative velocity of the wafer stage in the scanning direction.

FIG. 9D is a graph showing relative displacement of the wafer stage in the scanning direction.

FIG. 10A is a graph showing relative acceleration rates in the scanning direction of the wafer stage in the second scanning acceleration control method.

FIG. 10B is a graph showing relative acceleration of the wafer stage in the scanning direction.

FIG. 10C is a graph showing relative velocity of the wafer stage in the scanning direction.

FIG. 10D is a graph showing relative displacement of the wafer stage in the scanning direction.

11 is a schematic configuration diagram showing an exposure apparatus according to a second embodiment of the present invention.

Fig. 12 is a perspective view showing the positional relationship between two wafer stages, a reticle stage, a projection optical system, and an alignment detection system.

Fig. 13 is a schematic plan view showing the vicinity of the platform of the device shown in Fig. 11 .

14 is a plan view showing a state when a wafer exchange and alignment process and an exposure process are performed using two wafer stages.

FIG. 15 is a plan view showing a state when the wafer exchange/alignment program and the exposure program of FIG. 14 are switched.

FIG. 16 is a flowchart illustrating an embodiment of a device manufacturing method.

FIG. 17 is a flowchart showing a specific example of step 204 in FIG. 16 .

Implementation

Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. 1 to 10D.

FIG. 1 is a diagram schematically showing the overall configuration of an exposure apparatus 10 according to a first embodiment of the present invention. The exposure apparatus 10 is a lithography apparatus for manufacturing semiconductor devices, and is currently a mainstream product of projection exposure apparatuses that perform exposure operations using a step-and-scan method. This exposure apparatus 10 projects a partial image of a circuit pattern formed on a reticle R as a reticle onto a wafer W as an object through a projection optical system PL, and projects the reticle R and the wafer W relative to each other. The field of view of the optical system PL is relatively scanned in the one-dimensional direction (here refers to the left and right directions in the paper of Figure 1, that is, the Y direction), so that the overall circuit of the initial shrink mask R is scanned in a step-by-step manner. The pattern is transferred to a plurality of irradiated regions on the wafer W (hereinafter, abbreviated as "irradiated" as appropriate).

The above-mentioned light source 11 is a light source for exposure, for example, a KrF excimer laser with a wavelength of 248 nm or an ArF excimer laser with a wavelength of 193 nm is used. Among them, the pulsed laser beam in the ultraviolet region from the light source 11 (hereinafter referred to as "excimer laser", "pulse illumination light" or "pulse ultraviolet light") is used as illumination light for exposure, in order to obtain mass production of microcircuits. The minimum line width required by the device is about 0.25-0.10 μm, and the microcircuit device has the integration and fineness equivalent to a semiconductor memory device (D-RAM) above 256M-4Gbit level. Therefore, as the light source 11, a laser light source that outputs a pulsed laser beam in the vacuum ultraviolet region such as an F ₂ laser may be used.

The light source 11 is usually installed in another room (service room with low cleanliness) or the like isolated from the ultra-clean room in which the exposure apparatus main body 12 is installed. The exposure apparatus main body 12 is installed in an ultra-clean room and housed in an environmental chamber 13 whose internal space is highly dust-proof and temperature-controlled with high precision.

The light source 11 has an unillustrated operation panel and a control computer 11A connected to the operation panel. The control computer 11A controls the pulse of the light source 11 in response to an instruction from the main control device 50 described later during a normal exposure operation. glow.

The wavelength width (spectral half-value width) of the pulsed laser beam (excimer laser beam) from the light source 11 is narrowed so that chromatic aberration due to various refractive optical elements constituting the illumination optical system and projection optical system described later can be reduced. within the allowable range. The absolute value of the center wavelength to be narrowed and the value of the narrowing width (between 0.2pm and 300pm) are displayed on the operation panel, and fine adjustments can be made on the operation panel as needed. In addition, the operation panel can also be used to set the pulse lighting mode (representative modes include self-excited oscillation, external trigger oscillation, and maintenance oscillation).

A step-and-scan exposure device using an excimer laser as a light source, for example, Japanese Patent Laid-Open No. 2-229423, Japanese Patent No. 6-132195 and their corresponding U.S. Patent No. 5,477,304, Japanese Patent No. 7-142354 and The contents disclosed in the corresponding US Patent No. 5,534,970 and the like. Therefore, the basic technologies disclosed in the above-mentioned patent publications can be applied to the exposure apparatus 10 of FIG. 1 as they are or with some modifications. In addition, the disclosure content of each said US patent is referred as a part of description content of this specification.

The exposure apparatus main body 12 includes: an illumination optical system 18 (18A-18R), a reticle stage RST, a projection optical system PL, an imaging characteristic correction device, a stage device, a wafer transfer system, an alignment system, and the like.

The illumination optical system 18 includes a part of an optical axis adjustment optical system called a BMU (beam matching unit), and is connected to the light source 11 through a light transmission optical system. As shown in FIG. 1 , the light sending optical system has: a light-shielding tube 34 , one end of which is connected to the light source 11 and the other end is introduced into the environment chamber 13 ; A plurality of movable reflectors (not shown) are arranged in this light beam photosensitive system 32, for making the excimer laser beam that the light source 11 that introduces through light-shielding tube 34 sends out can be relative to the optical axis of the illumination optical system described below, often The incident position and incident angle of the excimer laser beam incident on the illumination optical system are adjusted to the optimum values with the prescribed positional relationship.

As shown in FIG. 1, the illumination optical system 18 includes: a variable dimmer 18A, a beam shaping optical system 18B, a first fly-eye lens system 18C, a vibrating (reflecting) mirror 18D, a condenser lens system 18E, and an illumination NA correction plate. 18F, 2nd fly eye lens system 18G, illumination system aperture diaphragm plate 18H, beam splitter 18J, 1st relay lens 18K, fixed initial reduction mask shutter 18L, movable initial reduction mask shutter 18M, second center Following lens 18N, illumination telecentric (telecentric) correction plate (tiltable quartz parallel plate) 18P, (reflecting) mirror 18Q, and main condenser lens system 18R etc. Next, each of the aforementioned components of the illumination optical system 18 will be described.

The variable optical attenuator 18A is used to adjust the average energy of each pulse of the excimer laser beam. For example, it can be formed by using a plurality of optical filters capable of switching different optical attenuation rates, so as to gradually change the attenuation rate, or A device that continuously changes the light reduction rate is used by adjusting the overlapping degree of two optical filters whose light transmittance changes continuously. The optical filters constituting the variable dimmer 18A are driven by the drive mechanism 35 controlled by the main controller 50 .

The role of the beam shaping optical system 18B is to shape the cross-sectional shape of the excimer laser beam adjusted to a predetermined peak intensity by the variable optical attenuator 18A into a shape similar to the overall shape of the incident end of the first fly-eye lens system 18C, And effectively incident on this 1st fly-eye lens system 18C, for example, can be made up of cylindrical lens and beam expander (both omission of figure) etc. The rear is the incident end of the double fly eye lens system described later.

The above-mentioned double fly-eye lens system is used to make the intensity distribution of the illuminating light uniform. The first fly-eye lens system 18C, the condenser lens 18E, and the second fly-eye lens system are sequentially arranged on the excimer laser beam optical path behind the beam shaping optical system 18B. 18G composition. A vibration mirror 18D is arranged between the first fly-eye lens system 18C and the condensing lens 18E to smooth interference fringes and weak speckles generated on the irradiated surface (reduced mask plate surface or wafer surface). The vibration (deflection angle) of the oscillating mirror 18D is controlled by the main controller 50 via the drive system 36 .

An illumination NA correction plate 18F is arranged at the incident end of the second fly-eye lens system 18G for adjusting the directivity of the numerical aperture of the surface to be irradiated by illumination light (illumination NA difference).

Regarding the structure of combining the double-fly-eye lens system and the vibrating mirror 18D similar to this embodiment, in addition to the above-mentioned Japanese Patent Application Laid-Open No. 7-142354 and its corresponding U.S. Patent No. 5,534,970, etc., for example, in Japanese Patent Laid-Open No. 1-1- Publication No. 259533 and its corresponding US Patent No. 5,307,207, JP-A-1-235289 and its corresponding US Patent No. 5,307,207, etc. have been disclosed in detail. The disclosure content of each of the above-mentioned US patents is cited as a part of the description content of this specification.

In the vicinity of the exit-side focal plane of the second fly-eye lens system 18G, an illumination system aperture stop plate 18H made of a disk-shaped member is arranged. On the illumination system aperture diaphragm plate 18H, aperture diaphragms are arranged at approximately equiangular intervals, for example, aperture diaphragms composed of ordinary circular apertures, aperture diaphragms composed of small circular apertures for reducing the coherence factor An aperture stop of the σ value, a ring aperture stop for ring illumination, and an anamorphic aperture stop for an anamorphic light source method in which four apertures are eccentrically arranged, for example. The illumination system aperture diaphragm plate 18H is driven to rotate by a motor not shown, etc. controlled by the main control device 50, so that any one aperture diaphragm is selectively set on the optical path of the pulsed illumination light, so that the The shape of the light source surface of pull lighting is limited to ring, small circle, large circle, or four holes.

On the optical path of the pulsed illumination light behind the aperture diaphragm plate 18H of the illumination system, a beam splitter 18J with a large reflectivity and a small transmittance is arranged, and on the optical path further behind it, there is a fixed shrinkage mask template curtain in the middle. 18L and the movable shrinking mask shade 18M are provided with a relay optical system composed of a first relay lens 18K and a second relay lens 18N.

The fixed reduction mask blind 18L is arranged on a surface that is slightly defocused from the conjugate surface of the pattern surface facing the reduction mask R, and forms an aperture member of a predetermined shape that defines the illumination area on the reduction mask R. . The aperture member in this embodiment is formed in a slit shape or a rectangle extending linearly in the X-axis direction perpendicular to the moving direction (Y-axis direction) of the shrink mask plate R during scanning exposure.

In addition, in the vicinity of the fixed shrink mask shade 18L, a movable shrink mask shade 18M having a variable aperture in position and width in a direction corresponding to the scanning direction is arranged. , the illuminated area is further restricted by the movable shrinking mask shutter 18M, thereby preventing exposure of unnecessary parts. The movable shrinking mask shade 18M is controlled by the main control device 50 through the drive system 43 .

An illumination telecentric correction plate 18P is arranged at the exit of the second relay lens 18N constituting the above-mentioned relay optical system, and a mirror 18Q is arranged on the optical path of the pulsed illumination light behind it, and the light passing through the second relay lens 18N The pulsed illumination light after illuminating the telecentric correction plate 18P is reflected toward the reduction mask R, and the main condenser lens system 18R is arranged on the optical path of the pulsed illumination light behind the mirror 18Q.

Below, briefly explain the effect of the illumination optical system 18 that constitutes above, the excimer laser beam from light source 11 is incident in the illumination optical system through light-shielding tube 34, beam photosensitive system 32, and this excimer laser beam passes through variable dimmer 18A After being adjusted to a predetermined beam intensity, it enters the beam shaping optical system 18B. The cross-sectional shape of the excimer laser beam is shaped by the beam shaping optical system 18B into a shape that effectively enters the first fly-eye lens system 18C. Then, the excimer laser beam is incident on the first fly-eye lens system 18C, and a surface light source consisting of a plurality of point light sources (light source images), that is, a two-dimensional light source is formed on the output-side focal plane of the first fly-eye lens system 18C. The pulsed ultraviolet light diverged from the two-dimensional light source passes through the vibrating mirror 18D, the condenser lens system 18E, and the illumination NA correction plate 18F, and enters the second fly-eye lens system 18G. In this way, a three-dimensional light source is formed on the exit-side focal plane of the second fly-eye lens system 18G. The three-dimensional light source is composed of a plurality of minute light source images uniformly distributed in a region of a predetermined shape. The pulsed ultraviolet light emitted from the three-dimensional light source passes through any aperture stop on the aperture stop plate 18H of the illumination system, and then reaches the beam splitter 18J with high reflectivity and low transmittance.

The pulsed ultraviolet light of the exposure light reflected by the dichroic mirror 18J passes through the first relay lens 18K and illuminates the fixed reduction mask blind 18L with the same intensity distribution. However, on this intensity distribution, interference fringes and faint speckles depending on the coherence of the pulsed ultraviolet light from the light source 11 can be superimposed with a contrast of about several percent. For this reason, on the wafer surface, uneven exposure due to interference fringes and weak speckles may occur. Amount unevenness can be smoothed out by vibrating the vibrating mirror 18D in synchronization with the movement of the shrink reticle R and the wafer W during the scanning exposure and the oscillation of the pulsed ultraviolet light.

In this way, the pulsed ultraviolet light passing through the aperture of the fixed shrink mask shade 18L, after passing through the aperture of the movable shrink mask shade 18M, passes through the second relay lens 18N and the illumination telecentric correction plate 18P via the mirror. 18Q bends the light path vertically downward, passes through the main condenser lens system 18R, and illuminates the specified illumination area (a narrow area linearly extending in the X-axis direction) on the reduced mask R supported by the reduced mask stage RST with uniform illumination distribution. slit or rectangular lighting area). Here, the rectangular slit-shaped illumination light irradiated on the shrink mask R is set to be elongated in the X-axis direction (non-scanning direction) at the center of the circular projection field of view of the projection optical system PL in FIG. 1 . The width of the illumination light in the Y-axis direction (scanning direction) is basically set to a constant value.

On the other hand, the pulsed illumination light passed through the beam splitter 18J passes through a condenser lens not shown, and is incident on an integrated sensor 46 composed of a photoelectric conversion element, where it undergoes photoelectric conversion. The photoelectric conversion signal of the integrating sensor 46 is supplied to the main controller 50 through a peak hold circuit and an A/D converter (not shown). The integrating sensor 46 can use a PIN type photodiode or the like which is sensitive in the far ultraviolet region and has a high response frequency for detecting the pulsed light emission of the light source 11 . The correlation coefficient between the output of the integrating sensor 46 and the illuminance (exposure amount) of the pulsed ultraviolet light on the surface of the wafer W can be obtained in advance and stored in the memory in the main control device 50 .

As shown in FIG. 1 , the above-mentioned reduced mask stage RST is arranged above the reduced mask base platform 28 located below the main condenser lens system 18R. On the upper surface of the shrink mask base stage 28, a guide (not shown) is provided along the scanning direction (Y-axis direction, first axis direction). An aperture 28 a is formed at the central portion of the shrink mask base platform 28 .

A reduced mask stage RST is disposed on the reduced mask base platform 28 , which absorbs and holds the reduced mask R, and moves in the Y direction along a guide not shown. The shrinking mask stage RST is actually driven by a linear motor constituting the shrinking mask driving system 29. Linear movement in the Y-axis direction with a large stroke; and the shrinking mask micro-movement stage, relative to the shrinking mask plate coarse-moving stage, through the voice coil motor (VCM), piezoelectric elements, etc. in the X-axis direction (second axis direction), Y-axis direction and θz direction (Z-axis rotation direction) perform minute movements. The above-mentioned shrinking mask plate R is adsorbed and supported on the shrinking mask plate micro-movement stage. In this way, the shrinking mask stage RST is composed of two stages. The content described below is that while the shrinking mask driving system 29 is driving along the Y-axis direction, it is driven in the X, Y, and θz directions. A single stage for micro-actuation.

A movable mirror 31 is fixed on the shrinking mask stage RST to reflect the laser beam from the shrinking mask laser interferometer (hereinafter referred to as "shrinking mask interferometer") 30, and the shrinking mask carrier The position of the stage RST in the moving plane can be constantly detected by the shrinking mask interferometer 30 with a resolution of about 0.5-1 nm. In fact, a movable mirror with a reflective surface perpendicular to the Y-axis direction and a movable mirror with a reflective surface perpendicular to the X-axis direction are provided on the shrinking mask stage RST, and corresponding to these movable mirrors, there are shrinking mask The template Y interferometer and the reduced mask X interferometer are collectively represented as a moving mirror 31 and a reduced mask interferometer 30 in FIG. 1 . For example, the end surface of the reticle stage RST may be mirror-finished to form a reflective surface (corresponding to the reflective surface of the moving mirror 31 ). In addition, in order to detect the position of the reduced mask stage RST in the scanning direction (Y-axis direction in this embodiment), it is also possible to use at least one three-dimensional (rectangular) prism (such as a mirror) instead of the position on the X-axis. A reflective surface that extends in the direction. One of the reduced mask Y interferometer and the reduced mask X interferometer, for example, the reduced mask Y interferometer is a 2-axis interferometer having a 2-axis long axis, according to which the reduced mask Y interferometer In addition to the Y position of the shrinking mask stage RST, the measured value of the initial reduction mask stage RST can also measure the rotation in the θz direction.

The position information (or velocity information) of the reduced mask stage RST (ie, the reduced mask R) measured by the reduced mask X interferometer 30 is sent to the reduced mask stage controller 33 . The reduced mask stage controller 33 controls the reduced mask driving system 29 that drives the reduced mask stage RST, so that the position information (or speed information) output from the reduced mask X interferometer 30 is consistent with The command values (target position, target speed) are basically the same.

The above-mentioned projection optical system PL can use a refractive optical system of 1/4 (or 1/5) reduction magnification. It is composed of a circular projected field of view and a refractive optical element (lens element) with quartz and fluorite as optical glass. The optical axis AX direction of this projection optical system PL is the Z-axis direction. In this case, the imaging light beam from the portion illuminated by the pulsed ultraviolet light in the circuit pattern area on the reduced mask R is reduced by 1/4 or 1/5 through the projection optical system PL and projected on the electrostatically adsorbed surface to be described later. On the resist layer of the wafer W on the wafer holder of the wafer stage WST.

Naturally, the projection optical system PL can also be a combination of refractive optical elements and reflective optical elements (concave mirrors, beam splitters, etc.) as disclosed in JP-A-3-282527 and its corresponding U.S. Patent No. 5,220,454 As for the catadioptric system, the disclosure of the above-mentioned US Patent is cited as a part of the description of this specification.

The imaging characteristic correction device described above is used to fine-tune various optical characteristics (imaging performance) of the projection optical system PL. In this embodiment, a telecentric lens system G2 is provided at a position close to the object plane in the projection optical system PL, It can move slightly in the direction of the optical axis AX, and can make a slight tilt to the surface perpendicular to the optical axis AX; MAC is composed of a driving mechanism 96 that makes the telecentric lens system G2 move slightly in the direction of the optical axis AX (including tilting). ; and an imaging characteristic correction controller 102 for controlling the MAC (ie, the driving mechanism 96). According to this imaging characteristic correcting device, it is possible to adjust the magnification or projection deviation (isotropic distortion aberration, drum, pincushion, trapezoidal isotropic distortion, etc.) of a projected image. The imaging characteristic correction controller 102 is also under the management of the main control device 50 . The main control device 50 or the imaging characteristic correction controller 102 can also adjust the imaging performance of the projection optical system PL by controlling the wavelength shift amount of the excimer focused light beam from the light source 11 .

The aberration correction plate G3 is arranged at a position close to the image plane in the projection optical system PL to reduce the astigmatism that is likely to occur in the projected image, especially in the tall part (the part close to the periphery of the projection field of view). Poor, coma.

In addition, in this embodiment, an image distortion correction plate G1 is provided between the lens system G2 of the projection optical system PL and the reduction mask R to effectively reduce the actual image projection area ( The random projection deviation component contained in the projected image is defined by the aperture diameter of the fixed shrink mask shade 18L. The correction plate G1 partially grinds the surface of a parallel quartz plate with a thickness of about several millimeters, so that the imaging beam passing through the ground part is slightly deflected. An example of the method of making the calibration plate G1 is disclosed in detail in JP-A-8-203805 and its corresponding U.S. Patent No. 6,268,903/6,377,333. Methods, the disclosure content of each of the above-mentioned US patents is cited as a part of the description content of this specification.

Next, the stage device will be described. As shown in FIG. 1, this stage device has: a stage 22 constituting a not-shown stand; and a wafer stage WST arranged on the stage 22 and used as an object stage movable in the XY plane. .

The wafer stage WST is floated and supported above the platform 22 by means of an unillustrated gas static pressure bearing provided on its bottom surface, for example, through an X linear motor and a Y linear motor with a gap of about several μm. , or planar motors are freely driven in the XY two-dimensional plane. In FIG. 1 , for convenience of illustration, the aforementioned actuator such as a linear motor is shown as a wafer driving system 48 . The wafer driving system 48 (ie, the aforementioned X linear motor and Y linear motor, etc.) is controlled by a wafer stage controller 78 .

As shown in Figure 1, the above-mentioned wafer stage WST has: a movable stage 52, so that the platform 22 can move freely in the XY plane; mechanism; and wafer table TB supported by the horizontal drive mechanism 58 to hold the wafer. The movable stage 52 is formed in a rectangular shape in planar view (viewed from above).

The wafer table TB is supported by three actuators ZAC constituting a horizontal drive mechanism 58 mounted on the moving stage 52 . A substantially circular wafer rack (not shown) is provided on wafer table TB, and wafer W is electrostatically attracted to and held by the wafer rack while being corrected for flatness. The wafer rack adopts a temperature control method to suppress expansion and deformation of the wafer W due to heat accumulation during exposure.

Above-mentioned horizontal driving mechanism 58 is made up of following parts, and 3 actuators (piezoelectric element, voice coil motor etc.) ZAC support wafer table TB near 3 vertices of equilateral triangle respectively, utilize each support point to be vertical to The Z-axis direction of the XY plane can independently drive the wafer table TB; and the actuator control device 56 controls the three actuators ZAC independently to make the wafer table TB move slightly in the direction of the optical axis AX (Z-axis direction), and at the same time Tilt relative to the XY plane. A drive command to the actuator control device 56 is output from the wafer stage controller 78 .

Although not shown in FIG. 1 , a focus and level detection system is provided near the projection optical system PL to detect deviation (focus error) and Tilt (level error), wafer stage controller 78 responds to the focus error signal and level error signal from the focus and level detection system, and outputs drive commands to actuator control device 56 . An example of this focus/level detection system is disclosed in detail in JP-A-7-201699 and its corresponding US Patent Nos. 5,473,424/6,377,333. The output of the focus/level detection system is supplied to the synchronous control system 80 via the wafer stage controller 78 , and is supplied to the main control device 50 via the synchronous control system 80 . The disclosure content of the above-mentioned US patent is cited as a part of the description content of this specification.

The position of wafer table TB is measured successively by laser interferometer system 76 . The measurement method will be described in detail below. The end surfaces on the -Y side and +X side of wafer table TB were mirror-finished to form reflection surfaces, respectively. The laser beams from the Y laser interferometer and the X laser interferometer constituting the laser interferometer system 76 are respectively projected onto these reflective surfaces, and the respective reflected lights are respectively detected by these interferometers, thereby respectively measuring the distance in the Y-axis direction of the wafer table TB. position and position in the X-axis direction. In this way, although a plurality of laser interferometers are provided, only a laser interferometer system 76 is representatively shown in FIG. 1 . Instead of each of the above-mentioned reflecting surfaces formed on wafer table TB, a moving mirror constituted by a flat (reflecting) mirror may also be provided.

The above-mentioned X laser interferometer and Y laser interferometer are multi-axis interferometers with multiple measuring axes, in addition to the X and Y axis positions of the wafer table TB, they can also measure the rotation (swing (Z axis rotation is θz rotation) , (front and back) pitch (the rotation of the X axis is θx rotation), (left and right) roll (the rotation of the Y axis is θy rotation)). Therefore, in the following description, laser interferometer system 76 is used to measure the position of wafer table TB in five degrees of freedom directions of X, Y, θz, θx, and θy. In addition, the multi-axis interferometer irradiates a laser beam to a reflective surface provided on a support frame (not shown) on which the projection optical system PL is mounted, through the reflective surface provided on the wafer table TB inclined at 45°, and detects the projection optical system PL. Relative position information of the PL in the optical axis direction (Z axis direction).

The horizontal drive mechanism 58 for micro-drive and tilt drive in the Z-axis direction of the wafer table TB is actually located below the above-mentioned reflective surface, so the drive amount during the pitch control of the wafer table TB can be completely monitored by the laser interferometer system 76. .

The position information of wafer table TB (ie, wafer stage WST) detected by laser interferometer system 76 described above is transmitted to wafer stage controller 78 . The wafer stage control 78 obtains the XY coordinate position according to the prescribed calculation, and outputs a command signal for driving the wafer stage WST to the wafer driving system 48 based on the obtained coordinate position and the target position information of the position to be controlled.

A fiducial mark plate FM whose surface height is substantially the same as the surface of the wafer W is provided on the wafer table TB. On this fiducial mark plate FM, there are formed fiducial marks that can be detected by various alignment detection systems described later. These fiducial marks are used to check (verify) the detection center points of various alignment detection systems and measure these detection center points. The distance (baseline) from the projection center of the projection optical system, check the position of the reduced mask R relative to the wafer coordinate system, or check the position of the Z-direction of the best imaging plane conjugated to the graphic surface of the reduced mask R wait.

The wafer transfer system described above transfers wafers between a wafer packaging unit (not shown) and wafer stage WST. This wafer transfer system has robotic arms (wafer loading arm and unloading arm), and transfers wafers W between wafer racks on wafer stage WST moved to a predetermined loading position (transfer position).

The alignment system of the exposure apparatus 10 of this embodiment uses the off-axis alignment system ALG, and can optically detect the alignment marks and the fiducial mark plates FM formed in each shot area on the wafer W without passing through the projection optical system PL. benchmark marks on. As shown in FIG. 1 , the off-axis alignment system ALG is disposed on the side of the projection optical system PL. This off-axis alignment system ALG irradiates the resist layer on the wafer W with non-photosensitive illumination light (uniform illumination or spot illumination) through the objective lens, and photoelectrically detects alignment marks and reflected light from reference marks through the objective lens. The photodetected mark detection signal is input to the signal processing circuit 68, but the signal processing circuit 68 is input with the measured value of the laser interferometer system 76 through the wafer stage controller 78, the synchronous control system 80 and the main control device 50. . The signal processing circuit 68 uses a predetermined algorithm to perform waveform processing on the mark detection signal of the above-mentioned photoelectric detection, and calculates the center of the mark and the detection center in the alignment detection system ALG ( Index marks, reference pixels on the imaging surface, photosensitive slits, or spotlights, etc.) match the coordinate position of the wafer stage WST (irradiation alignment position), or the position of the wafer mark and reference mark relative to the detection center Offset. The obtained irradiation alignment position or positional shift information is sent to the main controller 50, and is used for positioning when wafer stage WST is aligned, scanning start position for exposure (or scanning start position) for each shot area on wafer W Acceleration start position) setting, etc.

In addition, the exposure apparatus 10 of the present embodiment includes a synchronous control system 80 in the control system for synchronous movement of the shrink reticle stage RST and the wafer stage WST. The synchronous control system 80 is especially in scanning exposure, when synchronously moving the shrinking mask stage RST and the wafer stage WST, in order to make the driving system 29 controlled by the shrinking mask stage controller 33 The control of the wafer stage controller 78 and the control of the wafer drive system 48 can be interlocked with each other, and each of the initial reduction mask R and the wafer W measured by the initial reduction mask interferometer 30 and the laser interferometer system 76 The position and each speed status are monitored in real time, so that their interrelationship can achieve the prescribed effect. The synchronous control system 80 is controlled by various commands and parameter setting information from the master control device 50 . In this way, the present embodiment constitutes a stage control system for controlling the two stages RST and WST by the synchronous control system 80 , the reticle stage controller 33 and the wafer stage controller 78 .

The above-mentioned control system of the exposure apparatus 10 of the present embodiment is actually constructed as a distributed system, which includes a plurality of unit-side computers (microprocessors, etc.) that control the light source 11 and each unit (illumination optical system) of the exposure apparatus main body 12 respectively. , Reticle Stage RST, Wafer Stage WST, Wafer Transfer System, etc.); and the main control device 50, which is a control device composed of a terminal station that collectively controls these unit-side computers.

In the present embodiment, the plurality of unit-side computers are linked to the main control device 50 to execute a series of exposure processes on a plurality of wafers. The overall program of the series of exposure processes is collectively controlled by the main controller 50 based on a setting file for specifying exposure conditions called a process program stored in a memory not shown.

The process program is stored under the exposure processing file name made by the operator as a package of parameter groups. The package of this parameter group includes: the relevant information of the wafer to be exposed (processing number, shot size, shot arrangement data, alignment mark configuration) data, alignment conditions, etc.), information related to the initial reduction mask used (graphic classification data, configuration data of each mark, size of the circuit pattern area, etc.), information related to exposure conditions (exposure amount, focus deviation, etc.) displacement, scanning speed offset, projection magnification offset, correction of various aberrations and image distortion, aperture number of illumination optical system and setting value of coherence factor σ value, etc., aperture number of projection optical system setting value, etc.).

The main control device 50 interprets the instructed process program, and sequentially instructs the operation of each component required for wafer exposure processing as commands to the corresponding unit side computer. At this time, after each unit side computer normally completes a command, it sends the gist of the command to the main control device 50, and the main control device 50 receiving the information sends the next command to the unit side computer.

Next, with reference to FIG. 2A and FIG. 2B , a brief description will be given of the exposure of one shot area performed by the stage control system (wafer stage controller 78, reticle stage controller 33, and synchronous control system 80). The basic scanning sequence of the wafer stage, the stage control system is used to move the reticle stage RST and the wafer stage WST relative to the scanning direction (Y-axis direction).

FIG. 2A shows a slit-shaped illumination area on the wafer inscribed in the effective field of view PL' of the projection optical system PL (the illumination area and the conjugate area on the initial reticle R, hereinafter referred to as "illumination slit") FIG. 2B is a plan view of the relationship between ST and the irradiation area S as one divided area, and FIG. 2B shows the relationship between the stage moving time and the stage speed. The actual exposure is carried out by moving the irradiation area S in the opposite direction of the arrow Y relative to the illumination slit ST, but in FIG. , which represents that the illumination slit ST is moved relative to the irradiation area S.

First, as a basic (general) scanning procedure, center P of illumination slit ST is located at a position separated by a predetermined amount from the end of shot area S, and acceleration of wafer stage WST is started. At this time, shrinking reticle stage RST starts to accelerate in the direction opposite to wafer stage WST at the same time at an acceleration that is the reciprocal multiple of the projection magnification of the acceleration of wafer stage WST. When wafer stage WST and shrinking mask stage RST approach a predetermined speed, synchronous control of shrinking mask R and wafer W starts. The time _T1 from the start of acceleration of the two stages WST, RST to the start of the synchronization control is called an acceleration time. After starting the synchronous control, until the displacement error between the wafer and the shrinking mask reaches a predetermined relationship, the tracking control of the shrinking mask stage RST on the wafer stage WST is performed, and exposure is started. The time _T2 from the start of the synchronous control to the start of exposure is referred to as a stabilization time.

The time (T ₁ +T ₂ ) from the start of acceleration to the start of exposure is called the pre-scanning time. If the average acceleration during the acceleration time T ₁ is a, and the stabilization time is T ₂ , then the moving distance during the pre-scan is represented by (1/2)·a·T ₁ ² +a·T ₁ ·T ₂ .

Also, assuming that the irradiation length is L and the width of the illumination slit ST in the scanning direction is w, the exposure time T _{3 when exposing by moving at a constant speed is expressed as T 3 =} (L+w)/(a·T ₁ ), the moving distance is L+w.

At the end of the exposure time _T3 , the transfer of the contracted mask pattern to the shot area S is completed. In order to improve production capacity, the step-and-scan method usually alternately scans (scans back and forth) the contracted mask plate R to sequentially irradiate Therefore, it is necessary to move the reduced reticle R from the end of the exposure by the same distance as the movement distance during the above-mentioned pre-scan, and return the reduced reticle R to the scan start position for exposure of the next shot region. At this time, the wafer (wafer stage) moves in the scanning direction corresponding to the reduced mask (reduced mask stage). If the constant-speed exposure overscan time (post-stabilization time) is set as T ₄ , and the deceleration exposure overscan time is set as T ₅ , then the total exposure overscan time for the above process is (T ₄ +T ₅ ). If the deceleration during deceleration overscanning time T ₅ is set as b, the moving distance at this overscanning time is -(1/2)·b·T ₅ ² -b·T ₅ ·T ₄ , by setting Set b for T ₄ , T ₅ and deceleration, and make the distance equal to (1/2)·a·T ₁ ² +a·T ₁ ·T ₂ .

The general control system is a=-b, setting T ₁ =T ₅ and T ₂ =T ₄ is the easiest control method.

The following description will focus on the flowchart of FIG. 3 showing the processing algorithm of the main control device 50 (more precisely, the CPU in the main control device 50), and appropriately refer to other drawings to describe the operation of the exposure device 10 according to this embodiment. The operation when the pattern of the reticle R is sequentially transferred to a plurality of shot regions on the wafer W. Here, for a plurality of (for example, 76) shot areas shown in FIG. 4 , a case where exposure is performed along the route shown in the figure will be described. The path in Fig. 4 represents the track when the center P of the above-mentioned illumination slit ST passes through each irradiation area, and the solid line part in this track indicates the center P of the illumination slit ST (hereinafter also referred to as "point") when each irradiation area is exposed. P"), the dotted line part represents the moving track of the point P between adjacent irradiation areas in the same row in the non-scanning direction, and the single dotted line part shows the moving track of the point P between different rows. Actually, the point P is fixed and the wafer W is moving. However, in FIG. 4 , the point P (the center of the illumination slit ST) is shown moving on the wafer W for ease of understanding and explanation.

Before performing the processing of the flow chart in FIG. 3 , the main control device 50 and each unit computer perform an unillustrated initial mask alignment system (such as a scale microscope) and a reference mark plate on the wafer stage TB. Preparatory work for FM, and initial mask alignment using the alignment inspection system ALG, baseline measurement of the alignment inspection system ALG, and wafer alignment (EGA, etc.).

Regarding the above-mentioned initial reduction mask alignment, baseline measurement, etc., for example, it has been disclosed in detail in JP-A No. 7-176468 and its corresponding U.S. Patent No. 5,646,413. Regarding EGA, it has been disclosed in JP-A No. 61-44429 Its corresponding US Patent No. 4,780,617 and the like have been disclosed in detail, and the disclosure content of each of the above-mentioned US Patents is cited as a part of the description content of this specification.

After the preparatory work is completed, the flow chart in FIG. 3 starts to be executed.

First, in step 102, the count n indicating the row number of the shot area of the exposure target and the count m representing the shot number in the row are both initialized to 1 (1←m, 1←n).

Then, in step 104 , various setting information required for the first shot on the wafer, that is, the exposure of the first shot area in the first row, is transmitted to the synchronous control system 80 . This setting information includes: information relevant to the position control of the above-mentioned shrinking mask stage and the wafer stage, for example, the EGA parameters (X , the offset Ox, Oy in the Y direction, the perpendicularity error w of the stage coordinate system that stipulates the movement of the wafer, the rotation error θ of the wafer, the setting of the X, Y direction amplification (calibration) error rx, ry) of the wafer fixed value (these are the data used to determine the position of the wafer during exposure); the relevant correction parameters of the positions of the two stages during exposure (for example, the moving mirror on the stage (or wafer stage) side of the initial shrink mask) Bending information); and data related to exposure control, for example, the pulse energy density of the excimer laser, the number of pulses and other data; and even the set exposure program data, etc. Depending on the situation, error information of each mechanism when the stage is moved is also included.

In step 106 , a movement instruction of the reticle stage RST and the wafer stage WST is given to the synchronous control system 80 .

Based on the instruction from the main controller 50, the synchronous control system 80 instructs the wafer stage controller 78 to move the wafer W to the scanning start position (acceleration start position) for exposure for the first irradiation on the wafer W. Thus, wafer stage WST is moved to the above-mentioned acceleration start position by wafer stage controller 78 via drive system 48 . Then, the synchronous control system 80 monitors the measured values of the interferometer system 76 and the shrinking mask interferometer 30, and controls the above-mentioned shrinking through the wafer stage controller 78 and the shrinking mask stage controller 33 respectively. The reticle driving system 29 and the wafer driving system 48 start to shrink the relative scanning of the reticle stage RST and the wafer stage WST in the Y-axis direction.

At this time, the main controller 50 waits for completion of the acceleration of both stages RST, WST to the target scanning speed in step 108 . As soon as the acceleration of the two loads RST and WST ends, the light source 11 starts to emit light.

Basically at the same time as the light source 11 starts to emit light, the synchronization control system 80 starts the pre-exposure synchronization stabilization operation of the two stages RST and WSI.

In this way, before the synchronous stabilization of the two stages RST and WST is completed and the exposure is started, the light source 11 starts to emit light. Through the main control device 50, according to the measured value of the initial shrinkage mask interferometer 30, and the initial shrinkage mask stage RST synchronously controls the movement of the prescribed light-shielding sheet of the movable shrink mask blind 18M to prevent the remaining part outside the pattern area of the shrink mask R from being exposed, which is the same as the common scanning stepper.

As soon as the two stages RST and WST reach the state of constant speed synchronization, the ultraviolet pulsed light from the illumination optical system 18 starts to illuminate the pattern area of the contracted reticle R, and the above-mentioned scanning exposure starts.

The synchronous control system 80 performs synchronous control, especially during the above-mentioned scanning exposure, so that the moving speed Vr of the reticle stage RST in the Y-axis direction and the moving speed Vw (=Vy) of the wafer stage WST in the Y-axis direction ), maintaining a speed ratio compatible with the projection magnification (1/4 or 1/5) of the projection optical system PL.

Different areas of the pattern area of the shrink mask R are sequentially illuminated by the ultraviolet pulsed light to complete the illumination of the entire pattern area, thereby ending the scanning exposure of the first irradiation on the wafer W. In this way, the pattern of the reduced reticle R is reduced and transferred onto the first shot area by the projection optical system PL.

During the scanning exposure described above, the main control device 50 waits for the exposure at step 112 to end.

When the scanning exposure of the above-mentioned first irradiation is completed, the judgment of step 112 is affirmed, and the process proceeds to step 114, where irradiation of the laser beam is stopped. This stop of irradiation may stop the light emission of the light source 11, and may close the shutter which is not shown in the light source 11. FIG.

In step 116, refer to the count m, and judge whether the count value m is the last irradiation sequence number of the nth row (here, the first row), for example, according to the irradiation map. Now, because m=1, so the judgment here is denied, advance to step 118, after waiting for counting m to increase by 1, turn over to step 120, the irradiation of the mth number of the nth row (here is the first row of the first row) Various setting information required for the exposure of the second shot (ie, the second shot) is transmitted to the synchronous control system 80 . During the transfer of the various setting information, the synchronous control system 80 performs constant-speed overscan (post-stabilization) operation of wafer stage WST and reticle stage RST in relation to the scanning direction after exposure. Therefore, the synchronous control system 80 can normally receive the transmitted various setting information and store them in the internal memory.

After transmitting the above-mentioned setting information, the main control device 50 instructs the synchronous control system 80 of the movement of the two stages RST and WST under the first mode (hereinafter referred to as "movement of the first mode") in step 122, and then returns to the step 108. Wait for the end of the acceleration of the two stages RST and WST to the target scanning speed.

During the waiting state of this step 108 , the movement operation of the first mode is performed by the synchronous control system 80 . Next, the moving operation in the first mode will be described in detail. <Movement action of the first mode>

As an example, when sequentially exposing adjacent shots, first shot S ₁ , and second shot S ₂ located in the same row as shown in FIG. 5 , the movement of the two stages between shots will be described.

In FIG. 6A, the acceleration rate (jerk) curve Jy(t) related to the scanning direction (Y-axis direction) when the wafer stage WST performs the movement operation of the first mode is represented by a solid line, and the non-scanning curve Jy(t) is represented by a dotted line. The acceleration rate curve Jx(t) related to the direction (X-axis direction). Here, the jerk refers to the ratio of acceleration change, that is, the third-order differential formed by the position time.

In FIG. 6B, the acceleration curve Ay(t) related to the scanning direction of wafer stage WST corresponding to FIG. 6A is shown by a solid line, and the acceleration curve Ax(t) related to the non-scanning direction thereof is shown by a dotted line. In FIG. 6C, the velocity curve Vy(t) related to the scanning direction of wafer stage WST corresponding to FIGS. 6A and 6B is shown by a solid line, and the velocity curve Vx(t) related to the non-scanning direction is shown by a dashed line. In Fig. 6D, the displacement curve Py (t) relevant to the scanning direction of the wafer stage WST corresponding to Fig. 6A and Fig. 6B and Fig. 6C is represented by a solid line, and the displacement curve Px ( t). In these FIGS. 6A to 6D , the horizontal axis represents time (t).

In the movement action of the first mode, the initial reduction mask RST is according to the projection magnification of the above-mentioned acceleration curve Jy(t), acceleration curve Ay(t), velocity curve Vy(t) and displacement curve Py(t) Each time-varying curve of the reciprocal multiple of the size is shifted, so detailed description thereof will be omitted.

In this embodiment, actually, according to the acceleration rate curve in FIG. 6A , the synchronous control system 80 generates a speed or position command value, and according to the command value, the wafer stage controller 78 is used to control the speed or position through the wafer driving system 48. Wafer stage WST will be described below with reference to other drawings as appropriate, centering on the velocity curve in FIG. 6C for ease of understanding.

Let's consider the scan direction first. As mentioned above, from the exposure end time t ₁ of the irradiation S ₁ (the point P at this time is located at the point A in Fig. ₅ ) to the time t ₂ (=t ₁ +T ₄ ), wafer stage WST starts to decelerate (the velocity in the -Y direction when the +Y direction in FIG. 5 has a velocity). After the deceleration starts, the deceleration gradually increases (the absolute value of the acceleration in the -Y direction increases), reaches a predetermined constant value (-Aa), and maintains the constant value for a certain time ΔT thereafter (see FIG. 6B ). However, the period from the deceleration start time _t2 to the time _ty5 is the deceleration time.

At this time, with the point A ( _O , Ay) in FIG. 5 as the reference point, the wafer stage WST, as shown in _FIG . Advance, and then, with the time _t2 after the elapsed time _T4 as the reference point of time, at the speed obtained from the speed curve V _y (t) in FIG. 6C , only the time T _y5 is further advanced in the +Y direction. At time t ₃ after this time T _y5 has elapsed, a branch point B (B _x , B _y ) is formed (see FIG. 5 ) at which pre-scanning for the irradiation S ₂ which is another divided area starts.

Then, wafer stage WST accelerates in the -Y direction at a speed obtained from speed curve V _y (t) during time T _y1 using acceleration start point _t3 as a time reference.

During the above time period (T _y5 +T _y1 ), the acceleration rate curve J _y (t) is formed in the center part with an interval of acceleration rate = 0 as shown in FIG. A mountain-shaped curve with a convex upper side forms a curve after the polarized coding is reversed.

That is, in the movement operation of the first mode, the acceleration rate curve J _y (t) is regarded as the wafer loading time between the end of exposure to a certain shot and the synchronous stabilization period (T ₂ ) for exposure to the next shot. Since the object table WST is based on the command value during the assist movement in the scanning direction, the acceleration curve A _y (t) forms a trapezoidal shape indicated by a solid line in FIG. 6B during the corresponding period. Therefore, with regard to this walking assist period, the relationship is satisfied between the absolute value A _ymax =Aa of the highest deceleration (maximum instantaneous deceleration) or the highest acceleration (maximum instantaneous acceleration) during this period, and the absolute value A _yave of the average acceleration

A _yave < A _ymax = Aa < 2A _yave .

On the other hand, as a comparative example, FIGS. 7A to 7D show the acceleration rate curve, acceleration curve, velocity curve, and displacement curve (in these figures) of the wafer stage of the conventional exposure apparatus corresponding to FIGS. 6A to 6D. , the horizontal axis is time). As can be seen from FIG. 7A , during the assist movement of the wafer stage in the scanning direction, as the jerk curve, the jerk curve after four polarizations is used. Therefore, the acceleration curve exhibits a substantially triangular shape as shown by the solid line in FIG. 7B during the corresponding period. Therefore, during this walking assist period, the relationship is satisfied between the absolute value A _ymax of the maximum acceleration (maximum instantaneous acceleration) or the maximum deceleration (maximum instantaneous deceleration) and the absolute value A _yave of the average acceleration.

A _ymax 2A _yave .

In this way, the exposure apparatus 10 of this embodiment can increase the ratio of the absolute value of the average acceleration (or average deceleration) to the absolute value of the maximum acceleration (or maximum deceleration), in other words, can suppress the maximum acceleration (or maximum deceleration), Therefore, it is possible to reduce the size of the actuator such as the linear motor driving wafer stage WST or its driving amplifier during the acceleration (or deceleration), and to suppress heat generation by reducing power consumption. The same effect can also be obtained on the side of the shrinking mask stage RST. In addition, on the side of the shrinking mask stage RST, acceleration fluctuations (sharp changes and frequency of changes) can also be suppressed, so It can effectively suppress the misalignment of the initial contraction mask R.

Accelerate as described above, when reaching time _t4 shown in Fig. 6C, wafer stage WST reaches target scanning speed- _Vscan (wherein, negative sign represents the speed of-Y direction), afterwards, passes through as initial shrinkage Exposure starts at time _T2 during the synchronous control of reticle R and wafer W. The exposure time T ₃ is represented by T ₃ =(the length of the irradiation region Ly+the width of the illumination slit w)/V _scan .

Next, the moving operation in the non-scanning direction (stepping operation between irradiations) will be considered. As shown in FIG. 6C , at time t ₁ when the exposure of irradiation S ₁ ends, acceleration in the -X direction of wafer stage WST starts immediately according to speed curve Vx(t). From the start of acceleration to the time _Tx5 elapsed, the maximum velocity _-Vxman is reached (wherein, the negative sign represents the velocity in the -X direction). At this time, the X coordinate of wafer stage WST is -Bx, and point P is located at point B (Bx, By) in FIG. 5 . Then, deceleration (acceleration in the +X direction when there is a speed in the -X direction) starts according to the speed curve V _x (t) from this point. When time T _x1 elapses from the deceleration start timing (acceleration completion timing), the deceleration is completed and the velocity becomes 0 (ie, the movement in the non-scanning direction is stopped). At this time, the X coordinate of the wafer stage becomes -Lx (Lx is the step length), and the point P reaches the point C (Lx, Cy) in FIG. 5 .

That is, with regard to the scanning direction, as shown in FIG. 6C , at time _t4 after the time ( _T4 + _Ty5 + _Ty1 ) has elapsed from the exposure end time _t1 of the previous shot to completion of exposure for the next shot Acceleration, however, regarding the non-scanning direction, as shown in FIG. 6C, acceleration and deceleration are completed at the time (T _x5 +T _x1 ) elapsed from the exposure end time of the previous irradiation, so that it is assumed that T _y1 =T _x1 and If T _y5 =T _x5 holds true, it can be seen that the step action is completed only T ₄ ahead of time before the synchronous control starts at the stabilization time T ₂ of the scanning direction. At this time, the locus of wafer stage WST takes a parabolic shape as shown in FIG. 5 .

The aforementioned stepping motion in the non-scanning direction ends earlier than the start of synchronous control during the stabilization time in the scanning direction. The point of acceleration, that is, the X coordinate Bx of point B (Bx, By) in Fig. 5 is closer to _S2 at the boundary of irradiation _S1 and _S2 , and the overscan and overscan of the scanning direction of wafer stage WST The pre-scanning operation is performed in parallel, and a moving operation (stepping operation) in a non-scanning direction is performed. Wafer stage controller 78 and synchronous control system 80 control movement of wafer stage WST in X and Y directions.

The acceleration rate curve J _x (t) when performing the stepping in the above-mentioned non-scanning direction, as shown in the dotted line in Figure 6A, includes two groups of different and mutually opposite acceleration rate curves, forming a total of four polarized acceleration rate curves, and , the jerk curve does not contain the interval where the jerk rate is zero. That is, in this case, as can be seen from FIG. 6B and FIG. 6C, the acceleration _Ax (t) and the velocity _Vx (t) always change in the scanning direction, and the wafer stage WST always moves in the non-scanning direction. . In other words, wafer stage WST performs a stepping operation in parallel with the walking assist operation in the scanning direction without stopping.

Therefore, movement of wafer stage WST between irradiations (including the scanning direction and the non-scanning direction) can be basically performed in the shortest time, and throughput can be improved.

However, as mentioned above, since the pre-scanning time includes the settling time _T2 required to make the shrinking mask R completely track the wafer W, the acceleration and deceleration control in the non-scanning direction should preferably be controlled within the settling time T as much as possible. ₂ ends before the start time. In order to achieve this, it can be clearly seen from FIG. 6C that the wafer stage controller 78 and the synchronous control system 80 of this embodiment, after the end of the exposure, the wafer stage WST in the scanning direction during the constant speed overscan time _T4 , control is performed so that the movement of wafer stage WST in the non-scanning direction starts, and the acceleration and deceleration control in the non-scanning direction ends earlier, and the advance amount is the constant speed overscanning time T ₄ . That is, the stepping in the non-scanning direction ends before the synchronous control in the scanning direction starts, so the synchronous control system 80 can only be used for the synchronous control in the scanning direction during the stabilization time _T2 . In addition, when synchronous control is performed, there is basically no deceleration effect in the non-scanning direction, so the stabilization time T ₂ can be shortened, and the corresponding uniform-speed overscanning time T ₄ (post-stabilization time) can also be shortened. From this point of view, the production can be improved. ability.

Returning to the description of FIG. 3 , during the moving operation in the first mode described above, as described above, the main controller 50 waits for the completion of the acceleration of the two stages RST and WST in step 108 . Once the moving action of above-mentioned first mode finishes, the judgment of step 108 is affirmed, and the circular processing (including judgment) of step 110 → 112 → 114 → 116 → 118 → 120 → 122 → 108 is repeated afterwards until the judgment in step 116 Affirmed. In this way, from the irradiation (second irradiation) of the No. 2 irradiation in the nth row (here, the No. 1 row in the first row) to the final irradiation in the nth row (here, the No. 1 row), each is performed by alternate scanning. In the scanning exposure, the pattern of the reduced reticle R is sequentially transferred to these irradiations.

In this way, when the scanning exposure of the last irradiation of the first line is completed and the judgment of step 116 is affirmative, the process proceeds to step 124 .

In step 124, the count m is initialized to 1, and the count n is incremented by 1 (m←1, n←n+1).

In the next step 126, the count n is referred to, and it is judged whether the count value n is greater than the final row number N or not. At this time, when n=2, the judgment of step 126 is negated, and proceeds to step 128, and various setting information required for the exposure of the No. After sending to the synchronous control system 80, proceed to step 130, after the movement of the two stages RST and WST of the second mode (hereinafter referred to as "movement of the second mode") in the second mode is issued to the synchronous control system 80, Return to step 108, wait for the completion of the acceleration of the target scanning speed of the two stages RST, WST. During the waiting state of this step 108 , the movement operation of the second mode is performed by the synchronous control system 80 . The movement operation in this second mode will be described below. <Movement action of the second mode>

The moving action of the second mode is corresponding to the moving track of point P represented by a single dotted line in Fig. row) after the exposure of the final shot (for convenience, called "shot A") and before the start of exposure of a different row (next row) (for convenience, called "shot B") The movement of the stage.

The movement between different rows needs to combine the acceleration conditions before the wafer scanning exposure and the acceleration conditions before the shrink mask scanning, so the movement of the wafer stage in the non-scanning direction and the scanning direction must be temporarily stopped before the exposure starts. .

Therefore, the procedure for moving the wafer stage WST in the scanning direction between irradiation A and B generally adopts the following sequence, uniform speed overscan (post-stabilization) after exposure of irradiation A → moving to scanning for exposure of irradiation A Position corresponding to the start position (post-exposure deceleration completion position) → move to the exposure scanning start position of irradiation B (acceleration start position) → stop at the acceleration start position → accelerate → stabilize synchronization before exposure. In this case, the jerk curve has four extremums, similar to the above-described conventional walking assist operation between divided regions in the scanning direction.

However, in the moving operation in the second mode of the present embodiment, there is no post-stabilization period after the exposure of the above-mentioned irradiation A. FIG. The reason for this will be described below.

8A to FIG. 8D take time as the horizontal axis, and respectively show the movement of the wafer stage WST in the scanning direction between the irradiation of the same different rows of the above-mentioned irradiation A and irradiation B, and after the deceleration after the previous irradiation exposure ends. The acceleration rate curve J _y (t), the acceleration curve A _y (t), the velocity curve V _y (t), and the displacement curve P _y (t).

According to Fig. 8A, it can be clearly seen that in the moving action of the second mode, the positive acceleration curve on the + side and the convex acceleration curve on the - side constitute a set of acceleration curves after the polarized codes are reversed after starting to move. Between the jerk curves, there is an interval where the jerk rate is zero at time T ₀ , and a set of jerk rate curves, the jerk rate curves and the + side convex jerk rate curves of a group of jerk rate curves after the polarized code is reversed before the end of the constitutive movement Between the jerk curves that protrude sideways, there is an interval where the jerk rate is zero at time T ₀ . Therefore, the acceleration curves corresponding to each set of jerk rate curves form a trapezoidal curve as shown in FIG. 8B , and form the same suppressed maximum acceleration (absolute value) as above. In this way, the electric power required for acceleration can be suppressed when wafer stage WST is moved between irradiations of different rows.

At this time, the absolute value of the maximum acceleration Amax is consciously suppressed, and there are two places where acceleration can be ensured for a certain time T ₀ , so the aforementioned post-stabilization period is removed so that the time required for walking in the scanning direction is not longer than necessary.

In this way, there is basically no bad effect on production capacity. In fact, as can be seen from FIG. 4 , when the number of shots is assumed to be 76, there are only 9 places where the above-mentioned inter-row movement program is used.

The shrinking reticle stage RST can end the movement to the scanning start position when the wafer stage WST has moved to the deceleration end position after exposure to the above-mentioned irradiation A. Therefore, as long as the wafer stage WST is started Before the acceleration before the exposure of the irradiation B, the shrinking mask stage RST is always stopped.

In FIGS. 8A to 8D , although illustration is omitted, after the above-mentioned stop period, the acceleration of wafer stage WST is started in the same way as in FIG. 6A to FIG. Acceleration of Taiwan RST.

Returning to the description of FIG. 3 , during the movement operation of the second mode described above by the synchronous control system 80 , as described above, the main control device 50 waits for the completion of the acceleration of the two stages RST and WST in step 108 . As soon as the moving action of the above-mentioned second mode ends, the judgment of step 108 is affirmed. Afterwards, before the exposure of the last irradiation _SM from the second row No. 1 irradiation to the final row (Nth row) ends, the above steps are repeated. Treatment after 108.

In this way, the scanning exposure of irradiation on the wafer W and the stepping action between irradiation can be repeated through complete _alternate scanning. If the judgment in step 126 is affirmative, the series of processing in this program ends.

In this embodiment, the scanning exposure is sequentially and alternately performed along the path shown in FIG. 4 . At this time, the total exposure lines are even-numbered lines, so the exposure starts from the irradiation _S1 at the bottom left of Figure 4, the first line is exposed from left to right, and the next line is alternately stepped from right to left Finally, when the exposure of the upper left shot _SM ends, the wafer stage WST moves to a predetermined wafer exchange position, and the above-mentioned operation is repeated, that is, the configuration procedure is performed. When the above-mentioned alternate scanning is performed, the above-described efficient movement control of wafer stage WST between shots is performed between adjacent shots in the same row.

a. As described above, according to the exposure apparatus 10 of this embodiment, after the exposure of one shot area on the wafer W is completed by the main control device 50, the next shot area is exposed, and the stage The control system (80, 33, 78) transmits the setting information of the control parameters required for the exposure of the next shot area to the constituent stage during the period before the two stages RST and WST start to decelerate in the scanning direction. Synchronous control system 80 of the control system (refer to steps 120, 128 of FIG. 3). Therefore, after the exposure of one shot region on the wafer W is completed, the stage control system (80, 33 , 78) Adopt the control program that makes the two stage RST, WST not stop. That is, the stage control system does not need to temporarily stop the two stages before accelerating in order to obtain the setting information of the control parameters required for the exposure of a shot area from the host device, so there is no stop time, and accordingly, it is possible to Improve production capacity. At this time, the synchronous control system 80 can independently transmit all necessary information except the reduction mask interferometer 30, the laser interferometer system 76, and the information from the above-mentioned focus and level detection system that may be sampled frequently at the above-mentioned timing. Naturally, by increasing the processing speed of the synchronous control system 80, the side of the synchronous control system 80 can have the function of calculating the required correction value according to information such as the bending of the moving mirror, but the response speed required for synchronous control also requires high speed. Therefore, in order to achieve fast processing, it is best to adopt the following processing method, that is, all the parameter setting information used for stage control in the checksum initial setting information, user setting information, etc. 50 (superior unit) performs arithmetic processing in advance, which is the same as stage control information and exposure information, and transfers the setting information of parameters related to synchronous control as a determinant to the synchronous control system 80 in a state that can be processed most quickly .

The exposure apparatus 10 of the present embodiment is structured such that, as described above, after the exposure of one shot area on the wafer is completed, the setting information of the control parameters required for the exposure of the next shot area is sent to the synchronous control system. 80. However, if the hardware configuration allows (for example, to further increase the processing speed of the synchronous control system, etc.), it is also possible to send the above-mentioned setting information not after the exposure to a shot area on the wafer is completed, but during the exposure operation. (It is also possible to start sending setting information during exposure). In addition, the present invention is not limited thereto. As described above, as long as the hardware configuration permits, it is also possible to start sending above setting information. It is preferable to have a configuration in which setting information of control parameters necessary for exposure of a plurality of shot areas after the next shot area is transmitted when information transmission is started during the above-mentioned exposure process or synchronous control operation.

b. According to the exposure apparatus 10 of the present embodiment, the stage control system (80, 33, 78) decelerates the two stages RST, WST in the scanning direction after the exposure to one irradiation area on the wafer W is completed. At this time, the synchronous control of the two stages required for the exposure of the next shot area is started. Therefore, for example, compared with the case where the synchronous control is started immediately after the deceleration of the two stages is completed, the synchronization and stabilization of the two stages before the start of exposure can be completed earlier, and the production can be improved by shortening the synchronization stabilization time. ability.

c. According to the exposure device 10 of this embodiment, the stage control system (80, 33, 78) can complete the above-mentioned setting before the synchronization stabilization period of the two stages RST and WST before the exposure of the next shot area. The position setting of the two stages RST and WST according to the information. Therefore, the synchronization stabilization time of the two stages RST and WST before exposure can be shortened, and the throughput can be further improved.

d. According to the exposure device 10 of this embodiment, as can be clearly seen from FIGS. 6A to 6D , between the irradiation areas in the same non-scanning line perpendicular to the scanning direction, the stage control system (80, 33, 78) performs When the two stages RST and WST are decelerated in the scanning direction and then accelerated, the wafer stage WST (and the initial shrinkage mask) are controlled according to the command value obtained from the acceleration rate curve after the polarized code is reversed. The movement of the template stage RST) in the scanning direction. That is, since the acceleration curve of wafer stage WST at this time is trapezoidal as shown in FIG. 6B, as shown in FIG. Therefore, it is possible to shorten the time required for the above-mentioned walking assistance operation. In addition, in this case, as shown in FIG. 6A, the peak value of the jerk curve (the time change rate of acceleration, that is, the maximum value of the absolute value of jerk (jerk rate)) can be suppressed, so the maximum acceleration relative to wafer stage WST can be reduced. The ratio of the average value of acceleration can suppress the sharp change of acceleration and its frequency at the same time. Therefore, productivity can be improved while suppressing the power usage of the driving system of wafer stage WST, such as linear motors.

e. According to the exposure device 10 of this embodiment, the stage control system (80, 33, 78) according to the instruction from the main control device 50, between the irradiation areas in the same row in the non-scanning direction perpendicular to the scanning direction, After the exposure to an irradiated area is completed, the post-stabilization period (constant overscanning period) during which the two stages move at a constant speed in the scanning direction can be ensured before deceleration after the exposure ends (refer to T ₄ in FIG. 6C ), and When moving between different rows, it is possible to start the deceleration operation of both stages immediately after the exposure to one shot area is completed (see FIG. 8B ). Thus, there is no post-stabilization period as described above when moving between rows, with a corresponding increase in throughput.

f. According to the exposure device 10 of the present embodiment, it can be clearly seen from FIG. 6C that the stage system (80, 33, 78) controls the two stages so that after the exposure of an irradiation area on the wafer W is completed, for For the exposure of the next shot area, the two stages RST and WST are decelerated in the scanning direction and then accelerated, and the exposure between the shot areas in which the wafer stage WST moves in the non-scanning direction perpendicular to the scanning direction The moving operation can be performed simultaneously and in parallel, and the operation of moving wafer stage WST in the non-scanning direction is completed before the synchronization stabilization period of both stages RST and WST before the exposure of the next shot area. In this way, after the exposure of one shot area on the wafer W is completed, in order to expose the next shot area, the two stages are decelerated in the scanning direction and then accelerated, and the non-scanning operation of the wafer stage WST At least a part of the movement between the irradiation areas moving in the direction can overlap, so after the movement of the wafer stage between the irradiation areas in the non-scanning direction is completed, the acceleration action of the two stages in the scanning direction is started. Occasion ratio, can improve production capacity. In addition, the stage control system can only adjust the synchronization of the two stages during the synchronous stabilization period, so the stabilization time can be shortened.

In addition, if we focus on the stage device involved in this embodiment, that is, the wafer stage WST and its drive system and its control system (80, 78), through its control system (80, 78), the wafer stage WST The moving operation in the Y-axis direction, which is accelerated after being decelerated in the Y-axis direction (first axis direction), and the second-axis direction movement operation in the X-axis direction (second axis direction) perpendicular to the Y-axis direction are performed in parallel simultaneously. Stage WST moves along a U-shaped or V-shaped trajectory. At this time, as can be seen from FIG. 6A , wafer stage WST is controlled based on the command value obtained from the acceleration rate curve after the polarized code is reversed when moving in the Y-axis direction. At this time, the acceleration curve of wafer stage WST is trapezoidal (refer to FIG. 6B ), so the change in velocity is constant, and there is no period in which the velocity is zero (refer to FIG. 6C ), thereby shortening the time required for moving in the Y-axis direction. It takes time. In addition, since the peak value of the jerk curve can be suppressed, the ratio of the maximum acceleration to the average value of the acceleration of the wafer stage can be reduced, and sudden changes in acceleration and their frequency can be suppressed. Therefore, the throughput can be improved, and the power consumption of the wafer drive system 48 of the wafer stage, such as linear motors, can be suppressed. At this time, the above-mentioned stage control system can control the wafer stage according to the command value obtained by summing up the acceleration rate curves of four polarizations in which at least two extreme values have different shapes when performing the movement operation in the X-axis direction (refer to Figure 6A).

As explained in the above-mentioned embodiment, the main controller 50 transmits various setting information (including setting information of control parameters) required for exposure of the next shot region to the synchronous control device 80, but the present invention is not limited thereto. In the exposure apparatus 10 of the above-described embodiment, for example, step 128 in FIG. 3 may be replaced with a processing step in which the movement between lines is performed in a long section with the acceleration being zero as shown in FIG. 8B (peripheral (movement between lines for turning back during irradiation), the main control device 50 transmits (hands over) all the above-mentioned various setting information for all irradiation exposures existing in the next line to the synchronous control system 80 with one command. In this case, after the exposure of the final shot region in any row in the non-scanning direction on the wafer W is completed by the main controller 50, in order to perform exposure of the first shot region of another row, the stage control system (80 , 33, 78) During the movement control of the two stages RST and WST, various setting information (including setting information of control parameters) required for exposure of multiple shot areas in the next row are transmitted to the carrier. Object stage control system (more precisely, synchronous control system 80).

Therefore, even if the time from the end of exposure to one shot region on the wafer W to the start of deceleration of both stages is short, the setting information of the control parameters necessary for the exposure of the next shot region to be transmitted during this period becomes When it is difficult, it is also possible to use the two-stage control system created by the stage control system that makes the two stages not stop before the synchronization and stabilization period of the two stages required for the exposure of the next shot area from the end of the exposure. platform control program. Therefore, there is no need to temporarily stop the two stages before acceleration, so there is no stop time, and productivity can be improved accordingly. In this case, the stage control system may start the synchronous control operation of both stages from the time of deceleration related to the above-mentioned scanning direction.

When performing the above-mentioned inter-row movement (the inter-row movement for turning back during peripheral irradiation), even if the main control device 50 uses a command to set all the irradiation exposures existing in the next row with the aforementioned various settings When all the predetermined information is sent to the synchronous control system 80, the synchronous control system 80 can independently transmit the information from the initial mask interferometer 30, the laser interferometer system 76, and the above-mentioned focus and level detection system that may be sampled frequently at the above-mentioned timing. In addition to all necessary information, in order to realize fast processing, it is preferable to transfer parameter setting information related to synchronous control as a determinant to the synchronous control system 80 in a state that can be processed most quickly. In addition, based on the same reason as above, it is preferable that the stage control system completes the two stages corresponding to the above-mentioned setting information before the synchronization stabilization period of the two stages before starting the exposure of the next line of shot area each time. The position setting of the stage.

In addition, in the exposure apparatus 10 of the above-mentioned embodiment, when the synchronous control system 80 has ample memory, the main control device 50 can match the arrangement information required for position matching with a predetermined point of each shot area on the wafer. After the detection operation is completed, for example, after the aforementioned wafer alignment is completed, and before the exposure of the first irradiation starts, the setting information of all exposure control parameters in a plurality of (for example, 76) shot areas on the wafer W, sent to the synchronous control system 80. In this way, the aforementioned processing of steps 120 and 128 in FIG. 3 is no longer required. In addition, during the exposure process after the exposure of the first shot is started, there is no need to carry out the transfer processing of the setting information of the control parameters described above, so the process from the start of the exposure of the first shot on the wafer W to the exposure of the final shot is unnecessary. During the finishing period, it is possible to use the control program for the two stages created by the stage control system that does not stop the two stages, so that the productivity can be improved. For the same reason as above, it is preferable that the stage control system completes the setting of the positions of the two stages in accordance with the above-mentioned setting information before the synchronization stabilization period of the two stages before the exposure of each shot area starts. Certainly.

If the processing speed of the synchronous control system (synchronous control unit) 80 can be further increased, the transfer of the above information can be performed in parallel with the synchronous control of the two stages by the synchronous control system 80 . Therefore, choosing which timing to carry out the transfer of the above-mentioned information between the master control device 50 and the synchronous control system 80 at the foregoing description can greatly improve the memory capacity of the synchronous control system, the ability of fast processing (processing speed) and the synchronous control system. Design difficulty and other comprehensive judgments to determine.

The exposure apparatus 10 of the above-mentioned embodiment has been researched on the transmission processing of the above-mentioned control parameter setting information, especially the control of the two stages has also been studied in the aforementioned b. to f. This limits the present invention. That is, the studies on a. and b. to f. above may be conducted independently or in any combination.

In the above-mentioned embodiment, the acceleration of the non-scanning direction of the wafer W is started when the scanning exposure of one irradiation is finished and the constant velocity movement in the scanning direction is started, but it is not limited thereto, and the acceleration of the wafer W may also be started during the deceleration process of the wafer W. Acceleration in the non-scanning direction of W. At this time, before the scanning exposure of the next irradiation, the wafer W is accelerated along the direction intersecting with the scanning direction, and the moving speed in the scanning direction is set to a speed suitable for the sensitivity characteristics of the wafer W, so the exposure can be maintained. The speed and synchronous control of the shrink mask are sufficient, so the control is easy.

In the step-and-scan scanning exposure method of sequentially transferring the pattern of the reduced reticle R to a plurality of shot regions S ₁ , S ₂ ... on the wafer W performed by the exposure apparatus 10 of the above-mentioned embodiment, The reciprocating movement of the reticle R has transferred any two shot regions on the wafer W with the pattern of the reduced reticle R, for example, between the scanning exposure of the shot regions S ₁ and S ₂ , it is preferable not to stop the wafer W. to move. In this case, the wafer W is sequentially transferred to adjacent areas of the pattern of the reduced mask R, for example, between the scanning exposures of the shot areas S ₁ and S ₂ , the movement of the wafer W is not stopped, so the corresponding improvement is further improved. production capacity. In this sense, it is preferable that at least one of the scanning direction and the non-scanning direction of the wafer W is set in a non-scanning direction before the scanning exposure of the last shot area on the wafer W to which the pattern of the reduced mask R is to be transferred is completed. Move at zero speed. As a result, the wafer does not stop while the step-and-scan scanning exposure is performed on all of the plurality of shot regions, so that throughput can be improved.

However, for example, according to Fig. 6A and Fig. 6B, etc., it can also be imagined that when moving between the irradiation areas, in the scanning direction of the wafer stage and the reticle stage, even if the scanning speed and the acceleration time are fixed, If the internal ratio of the jerk rate (the ratio of the jerk rate to the time when the acceleration time (or deceleration time) is not zero) is changed, the maximum instantaneous acceleration will change accordingly.

Regarding this point, the present inventors formulated the jerk, acceleration, velocity, and displacement curves of the stage in the scanning direction when moving between irradiation areas, and this will be described below.

First, a description will be given of a case where the (curve) profile of deceleration and acceleration is symmetrical (hereinafter referred to as the first scanning acceleration control method) that is the same as the first mode of movement in the above-mentioned embodiment. 9A to 9D show the acceleration curve, acceleration curve, velocity curve, and displacement curve of the wafer stage in the scanning direction in this case, respectively.

Designate scanning speed V[m/s], acceleration time T[s], and acceleration ratio R as input variables.

However, it is also possible to specify the maximum instantaneous acceleration A to replace the acceleration time T and the internal ratio R of the acceleration rate.

At this time, the relationship of A, V, T, and R is represented by the following formulas (1) and (2). $T=-\frac{V}{(1-\frac{R}{2})A}\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(1\right)$ $R=2\&CenterDot;(1-\frac{V}{\mathrm{AT}})\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(2\right)$

The internal variables at this time are the first inflection point time T ₁ , the second inflection point time T ₂ and the maximum acceleration rate (first half) J ₁ , and the following formulas (3), (4), (5) to represent. ${\mathrm{<figure-callout\; id="1"\; label="T"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">T</figure-callout>}}_1=\frac{1}{2}\mathrm{RT}\&CenterDot;\&Center\; Dot;\&Center\; Dot;\left(3\right)$

T ₂ =RT...(4) ${\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1=-2\&CenterDot;\frac{V}{(1-\frac{1}{2}R){\mathrm{RT}}^2}\&CenterDot;\&CenterDot;\&CenterDot;\left(5\right)$

The internal ratio R of the acceleration rate obtained by the formula (4) is R=T ₂ /T.

The jerk, acceleration, and velocity displacement of each section are as follows.

The first interval (O≤t≤T ₁ ) $\mathrm{Jerk}\left(t\right)=2\&CenterDot;\frac{{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1}{\mathrm{RT}}t\&CenterDot;\&CenterDot;\&CenterDot;\left(6\right)$ $\mathrm{Acc}\left(t\right)=\frac{{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1}{\mathrm{RT}}{t}^2\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(7\right)$ $\mathrm{Vel}\left(t\right)=\frac{1}{3}\&CenterDot;\frac{{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1}{\mathrm{RT}}{t}^3+V\&Center\; Dot;\&CenterDot;\&Center\; Dot;\left(8\right)$ $\mathrm{Pos}\left(t\right)=\frac{1}{12}\&CenterDot;\frac{{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1}{\mathrm{RT}}{t}^4+\mathrm{Vt}\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(9\right)$

The second interval (T ₁ ≤t≤T ₂ ) $\mathrm{Jerk}\left(t\right)=-2\&Center\; Dot;\frac{{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1}{\mathrm{RT}}t+{2\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1\&Center\; Dot;\&Center\; Dot;\&CenterDot;\left(10\right)$ $\mathrm{Acc}\left(t\right)=-\frac{{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1}{\mathrm{RT}}{(t-\mathrm{RT})}^2+\frac{1}{2}{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1\mathrm{RT}\&Center\; Dot;\&Center\; Dot;\&CenterDot;\left(11\right)$ $\mathrm{Vel}\left(t\right)=-\frac{1}{3}\&Center\; Dot;\frac{{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1}{\mathrm{RT}}{(t-\mathrm{RT})}^3+\frac{1}{2}{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1\mathrm{RT}(t-\frac{1}{2}\mathrm{RT})+V\&CenterDot;\&CenterDot;\&CenterDot;\left(12\right)$ $\mathrm{Pos}\left(t\right)=-\frac{1}{12}\&Center\; Dot;\frac{{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1}{\mathrm{RT}}{(t-\mathrm{RT})}^4+\frac{1}{4}{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1\mathrm{RT}{(t-\frac{1}{2}\mathrm{RT})}^2+\mathrm{Vt}+\frac{1}{96}{J}_1{R}^3{T}^3\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(13\right)$

The third interval (T ₂ ≤t≤T)

Jerk(t)=0...(14) $\mathrm{Acc}\left(t\right)=\frac{1}{2}{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1\mathrm{RT}\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(15\right)$ $\mathrm{Vel}\left(t\right)=\frac{1}{2}{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1\mathrm{RT}(t-\frac{1}{2}\mathrm{RT})+V\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(16\right)$ $\mathrm{Pos}\left(t\right)=\frac{1}{4}{\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1\mathrm{RT}{(t-\frac{1}{2}\mathrm{RT})}^2+\mathrm{Vt}+\frac{1}{96}{J}_1{R}^3{T}^3\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(17\right)$

The fourth interval (T≤t≤2T)

Jerk(t)＝-Jerk(2T-t) …(18)

Acc(t)＝Acc(2T-t) ...(19)

Vel(t)＝-Vel(2T-t) ...(20)

Pos(t)＝Pos(2T-t) ...(21)

According to the first scanning acceleration control method, as mentioned above, there is no scanning axis stop time during the period from the completion of deceleration to the start of acceleration, and the production capacity can be improved. At the same time, the maximum instantaneous acceleration can be suppressed below 2 times relative to the average acceleration, In this way, it is possible to miniaturize the actuator and the amplifier, and to increase the degree of freedom in their design. On the stage side of the shrink mask, in addition to the above effects, the misalignment of the shrink mask can also be effectively suppressed.

Next, a case will be described in which the profiles during deceleration and acceleration are asymmetrical (hereinafter referred to as the second scan acceleration control method).

10A to 10D show the acceleration curve, acceleration curve, velocity curve, and displacement curve of the wafer stage in the scanning direction in this case, respectively.

Designate scanning speed V [m/s], deceleration time T _D [s], acceleration time T _A [s], deceleration jerk internal ratio R _D , and acceleration jerk internal ratio R _A as input variables.

However, it is also possible to designate the maximum instantaneous acceleration A to replace the deceleration time T _D , acceleration time T _A and acceleration rate internal ratios R _D and R _A .

At this time, the relationship among A, V, T _A , T _D , R A , _and R _D is represented by the following formulas (22), (23), and (24). $T_{\mathrm{D.}}=-\frac{V}{(1-\frac{R_{\mathrm{D.}}}{2})A}\&CenterDot;\&Center\; Dot;\&CenterDot;\left(\mathrm{twenty\; two}\right)$ $T_A=-\frac{V}{(1-\frac{R_A}{2})A}\&Center\; Dot;\&CenterDot;\&CenterDot;\left(\mathrm{twenty\; three}\right)$ $R_A=2\&Center\; Dot;(1-\frac{V}{{\mathrm{AT}}_A})\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(\mathrm{twenty\; four}\right)$

The internal variables at this time are the internal ratio of deceleration acceleration rate R _D , deceleration stroke L _D [m], acceleration stroke L _A [m], constant speed time T ₀ [s], first inflection point time T ₁ , second Inflection point time T ₂ , deceleration completion acceleration start time T ₃ , fourth inflection point time T ₄ , fifth inflection point time T ₅ , acceleration completion time T', elapsed time since deceleration start T _s [s ], the remaining time T _R [S] until the acceleration is completed, the maximum value of jerk (during deceleration) J ₁ [m/s ³ ], and the maximum value of jerk (during acceleration) J ₂ [m/s ³ ], and They are represented by the following formulas (25) to (38), respectively. $R_{\mathrm{D.}}=2-\frac{T_A}{T_{\mathrm{D.}}}(2-R_A)\&CenterDot;\&CenterDot;\&Center\; Dot;\left(25\right)$ $L_{\mathrm{D.}}=\frac{1}{2}{\mathrm{VT}}_{\mathrm{D.}}(1+\frac{1}{2}{R}_{\mathrm{D.}})-\frac{1}{48}\&Center\; Dot;\frac{{\mathrm{VT}}_{\mathrm{D.}}{R}^3}{(1-\frac{1}{2}{R}_{\mathrm{D.}})}\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(26\right)$ $L_A=\frac{1}{2}{\mathrm{VT}}_A(1+\frac{1}{2}{R}_A)-\frac{1}{48}\&Center\; Dot;\frac{{\mathrm{VT}}_A{R}^3}{(1-\frac{1}{2}{R}_A)}\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(27\right)$ $T_0=\frac{L_A-L_{\mathrm{D.}}}{V}\&CenterDot;\&CenterDot;\&CenterDot;\left(28\right)$ ${\mathrm{<figure-callout\; id="1"\; label="T"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">T</figure-callout>}}_1=\frac{1}{2}{R}_{\mathrm{D.}}{T}_{\mathrm{D.}}+T_0\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(29\right)$

T ₂ =R _D T _D +T ₀ ...(30)

T ₃ =T ₀ +T _D ... (31)

T ₄ ＝T ₃ +(1-R _A )T _A …(32) ${\mathrm{<figure-callout\; id="5"\; label="T"\; filenames="A0314131500991.png"\; state="\{\{state\}\}">T</figure-callout>}}_5=T_3+(1-\frac{1}{2}{R}_A)T_A\&CenterDot;\&CenterDot;\&CenterDot;\left(33\right)$

T＝T ₀ +T _D +T _A ...(34)

t _S ＝tT ₀ ...(35)

t _R =T'-t...(36) ${\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1=-2\&Center\; Dot;\frac{V}{(1-\frac{1}{2}{R}_{\mathrm{D.}})}{R}_{\mathrm{D.}}{T_{\mathrm{D.}}}^2\&CenterDot;\&CenterDot;\&Center\; Dot;\left(37\right)$ $J_2=2\&Center\; Dot;\frac{V}{(1-\frac{1}{2}{R}_A)R_A{T_A}^2}\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(38\right)$

At this time, the deceleration jerk internal ratio R _D =(T ₂ -T ₀ )/(T ₃ -T ₀ ), the acceleration jerk internal ratio R _A =(T'-T ₄ )/(T'-T ₃ ).

The jerk, acceleration, and velocity displacement of each section are as follows.

The first interval (O≤t≤T ₀ )

Jerk(t)＝0 …(39)

Acc(t)＝0 …(40)

Vel(t)＝V ...(41)

Pos(t)＝Vt ...(42)

The second interval (T ₀ ≤t≤T ₁ ) $\mathrm{Jerk}\left(t\right)=2\&Center\; Dot;\frac{J_1}{R_{\mathrm{D.}}{T}_{\mathrm{D.}}}{t}_{\mathrm{the\; s}}\&Center\; Dot;\&Center\; Dot;\&CenterDot;\left(43\right)$ $\mathrm{Acc}\left(t\right)=\frac{J_1}{R_{\mathrm{D.}}{T}_{\mathrm{D.}}}{t_{\mathrm{the\; s}}}^2\&Center\; Dot;\&CenterDot;\&Center\; Dot;\left(44\right)$ $\mathrm{Vel}\left(t\right)=\frac{1}{3}\&CenterDot;\frac{J_1}{R_{\mathrm{D.}}{T}_{\mathrm{D.}}}{t_S}^3+V\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(45\right)$ $\mathrm{Pos}\left(t\right)=\frac{1}{12}\&CenterDot;\frac{J_1}{R_{\mathrm{D.}}{T}_{\mathrm{D.}}}{t_S}^4+\mathrm{Vt}\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(46\right)$

The third interval (T ₁ ≤t≤T ₂ ) $\mathrm{Jerk}\left(t\right)=-2\&CenterDot;\frac{J_1}{R_{\mathrm{D.}}{T}_{\mathrm{D.}}}{t}_S+{2\mathrm{<figure-callout\; id="1"\; label="J"\; filenames="A0314131500921.png"\; state="\{\{state\}\}">J</figure-callout>}}_1\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(47\right)$ $\mathrm{Acc}\left(t\right)=-\frac{J_1}{R_{\mathrm{D.}}{T}_{\mathrm{D.}}}{(t_S-R_{\mathrm{D.}}{T}_{\mathrm{D.}})}^2+\frac{1}{2}{J}_1{R}_{\mathrm{D.}}{T}_{\mathrm{D.}}\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(48\right)$ $\mathrm{Vel}\left(t\right)=-\frac{1}{3}\&Center\; Dot;\frac{J_1}{R_{\mathrm{D.}}{T}_{\mathrm{D.}}}{(t_S-R_{\mathrm{D.}}{T}_{\mathrm{D.}})}^3+\frac{1}{2}{J}_1{R}_{\mathrm{D.}}{T}_{\mathrm{D.}}(t_S-\frac{1}{2}{R}_{\mathrm{D.}}{T}_{\mathrm{D.}})+V\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(49\right)$ $\mathrm{Pos}\left(t\right)=-\frac{1}{12}\&CenterDot;\frac{J_1}{R_{\mathrm{D.}}{T}_{\mathrm{D.}}}{(t_S-R_{\mathrm{D.}}{T}_{\mathrm{D.}})}^4+\frac{1}{4}{J}_1{R}_{\mathrm{D.}}{T}_{\mathrm{D.}}{(t_S-\frac{1}{2}{R}_{\mathrm{D.}}{T}_{\mathrm{D.}})}^2+\mathrm{Vt}+\frac{1}{96}{J}_1{R_{\mathrm{D.}}}^3{T_{\mathrm{D.}}}^3\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(50\right)$

The fourth interval (T ₂ ≤t≤T ₃ )

Jerk(t)=0...(51) $\mathrm{Acc}\left(t\right)=\frac{1}{2}{J}_1{R}_{\mathrm{D.}}{T}_{\mathrm{D.}}\&CenterDot;\&CenterDot;\&Center\; Dot;\left(52\right)$ $\mathrm{Vel}\left(t\right)=\frac{1}{2}{J}_1{R}_{\mathrm{D.}}{T}_{\mathrm{D.}}(t_S-\frac{1}{2}{R}_{\mathrm{D.}}{T}_{\mathrm{D.}})+V\&CenterDot;\&Center\; Dot;\&Center\; Dot;\left(53\right)$ $\mathrm{Pos}\left(t\right)=\frac{1}{4}{J}_1{R}_{\mathrm{D.}}{T}_{\mathrm{D.}}{(t_S-\frac{1}{2}{R}_{\mathrm{D.}}{T}_{\mathrm{D.}})}^2+\mathrm{Vt}+\frac{1}{96}{J}_1{R_{\mathrm{D.}}}^3{T_{\mathrm{D.}}}^3\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(54\right)$

The fifth interval (T ₃ ≤t≤T ₄ )

Jerk(t)＝0…(55) $\mathrm{Acc}\left(t\right)=-\frac{1}{2}{J}_2{R}_A{T}_A\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(56\right)$ $\mathrm{Vel}\left(t\right)=\frac{1}{2}{J}_2{R}_A{T}_A(t_R-\frac{1}{2}{R}_A{T}_A)-V\&CenterDot;\&CenterDot;\&CenterDot;\left(57\right)$ $\mathrm{Pos}\left(t\right)=\frac{1}{4}{J}_2{R}_A{T}_A(t_R-\frac{1}{2}{R}_A{T}_A)+{\mathrm{Vt}}_R-\frac{1}{96}{J}_2{R_A}^3{T_A}^3\&CenterDot;\&CenterDot;\&Center\; Dot;\left(58\right)$

The sixth interval (T ₄ ≤t≤T ₅ ) $\mathrm{Jerk}\left(t\right)=-2\&CenterDot;\frac{J_2}{R_A{T}_A}{t}_S+{2J}_2\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(59\right)$ $\mathrm{Acc}\left(t\right)=\frac{J_2}{R_A{T}_A}{(t_R-R_A{T}_A)}^2-\frac{1}{2}{J}_2{R}_A{T}_A\&CenterDot;\&Center\; Dot;\&Center\; Dot;\left(60\right)$ $\mathrm{Vel}\left(t\right)=\frac{1}{3}\&CenterDot;\frac{J_2}{R_A{T}_A}{(t_R-R_A{T}_A)}^3+\frac{1}{2}{J}_2{R}_A{T}_A(t_R-\frac{1}{2}{R}_A{T}_A)-V\&CenterDot;\&CenterDot;\&CenterDot;\left(61\right)$ $\mathrm{Pos}\left(t\right)=\frac{1}{12}\&Center\; Dot;\frac{J_2}{R_A{T}_A}{(t_R-R_A{T}_A)}^4-\frac{1}{4}{J}_2{R}_A{T}_A{(t_R-\frac{1}{2}{R}_A{T}_A)}^2+{\mathrm{Vt}}_R-\frac{1}{96}{J}_2{R_A}^3{T_A}^3\&Center\; Dot;\&Center\; Dot;\&Center\; Dot;\left(62\right)$

The seventh interval (T ₅ ≤ t ≤ T'(=T ₆ )) $\mathrm{Jerk}\left(t\right)=2\&Center\; Dot;\frac{J_2}{R_A{T}_A}{t}_R\&Center\; Dot;\&Center\; Dot;\&CenterDot;\left(63\right)$ $\mathrm{Acc}\left(t\right)=-\frac{J_2}{R_A{T}_A}{t_R}^2\&CenterDot;\&Center\; Dot;\&CenterDot;\left(64\right)$ $\mathrm{Vel}\left(t\right)=\frac{1}{3}\&Center\; Dot;\frac{J_2}{R_A{T}_A}{t_R}^3-V\&CenterDot;\&CenterDot;\&CenterDot;\left(65\right)$ $\mathrm{Pos}\left(t\right)=-\frac{1}{12}\&Center\; Dot;\frac{J_2}{R_A{T}_A}{t_R}^4+{\mathrm{Vt}}_R\&CenterDot;\&Center\; Dot;\&CenterDot;\left(66\right)$

In the above-formulated second scanning acceleration control method, as shown in FIG. 10B, the mountain of the acceleration curve A _CC (t) is a trapezoid, and is obtained after the acceleration rate curve shown in FIG. 10A is reversed by the polarized code, This point is the same as the aforementioned first scanning acceleration control method. However, the profile during deceleration and acceleration is asymmetrical. That is, the shapes of the jerk curves in the deceleration region and the acceleration region are different from each other. At this time, in the deceleration region, deceleration is performed at a high acceleration rate in consideration of productivity, and in the acceleration region before exposure, the acceleration rate is reduced in consideration of shortening the subsequent synchronization stabilization period. However, by making the acceleration rate of the acceleration region and the deceleration region different, the stroke (equivalent to the displacement) of the deceleration region and the stroke of the acceleration region will not be different, that is, the scan start position and the scan end position at the time of alternate scanning are made to be the same, Adjustment is realized by setting the constant-velocity overscan time T ₀ before the start of deceleration to be longer. In this way, the acceleration end positions of the two stages are consistent with the specified target position, and the control hysteresis at the acceleration end position and the synchronization error of the two stages caused by the acceleration end position can be suppressed, so the time before exposure can be shortened. Sync stabilization time.

Therefore, in the exposure apparatus 10 of the above-mentioned first embodiment, the second scanning acceleration control method can be applied to the scanning direction control of the wafer stage WST during the movement operation of the first mode, and the shrinking of the reticle stage. Scan direction control for RST. In this way, the maximum value of the acceleration rate before exposure can be suppressed, the synchronization accuracy of the shrink mask stage and the wafer stage can be improved, and the production capacity can be improved by shortening the synchronization stabilization time. In addition, since the constant speed overscan time can be set longer, it is possible to secure a longer time for the above-mentioned main control device 50 to transmit various setting information to the synchronous control system 80 . Therefore, compared with the above-mentioned first embodiment, more information can be transmitted, and the synchronization control between the shrink mask and the wafer can be performed with further high precision based on the information.

When any one of the above-mentioned first scanning acceleration control method and the second scanning acceleration control method is adopted, when the stage control system performs the above-mentioned walking-aiding action between the divided areas of different rows in the non-scanning direction, it can according to the established The command value obtained from the four-polarized jerk curve is used to control the wafer stage. In this case, the above-mentioned four-polarized jerk curve may have a shape having at least two extreme values different from each other.

Regarding the control of the two stages by the various methods described above, the above-mentioned stage control system can be paralleled with the above-mentioned walking aid action of the two stages between the above-mentioned irradiation areas, according to at least two extreme values are Different shapes and command values obtained by summing up the four-polarized acceleration curves are used to perform movement operations between shot areas that move the wafer stage in the non-scanning direction.

The inventor (West) of the present application has previously proposed the following exposure apparatus mainly from the viewpoint of improving throughput during double exposure, which has two wafer stages (substrate stages), and one wafer stage When exposing the wafer to the wafer on the platform, perform other operations such as wafer exchange and alignment in parallel on another wafer stage (refer to Japanese Patent Application Laid-Open Publication No. 10-163097 and Publication No. 10-163098, and their corresponding US Patent No. 6,400,441/6,341,007 etc.). It is obvious that the exposure devices described in these publications and the corresponding US patents are not double exposure, and if they are used for ordinary exposure, the production capacity will be improved more than double exposure. If the exposure apparatus described in the above-mentioned gazette and the corresponding US patent adopts the scanning exposure method described in the above-mentioned first embodiment, the productivity can be further improved regardless of normal exposure or double exposure. The disclosure content of each of the above-mentioned US patents is cited as a part of the description of this specification.

However, the setting information transmitted from a host unit such as the main controller 50 to the synchronous control system 80 and the like may include information on error control of each mechanical part when the stage moves, as described above. The second embodiment to be described below is aimed at making more active and effective use of information related to such error control and the like. "Second Embodiment"

Next, a second embodiment of the present invention will be described with reference to FIGS. 11 to 15 .

FIG. 11 shows a schematic configuration of an exposure apparatus 100 according to the second embodiment. However, the same reference numerals are used for the same or equivalent parts as those of the aforementioned first embodiment, and their descriptions are simplified or omitted. The exposure apparatus 100 is a so-called step-and-scan scanning exposure type projection exposure apparatus.

This exposure apparatus 100 has: a stage device 101 having two wafer stages WST1, WST2 serving as object stages, respectively supporting wafers W1, W2 as objects, and independently moving in two-dimensional directions; The projection optical system PL on the stage device 101; the reduction mask driving mechanism is located above the projection optical system PL, and is mainly used to scan the reduction mask R1 (or R2) as a mask to a specified Directional driving, here is driving in the Y-axis direction (vertical direction of the paper in FIG. 11); the illumination optical system 18 illuminates the reduced mask plate R1 (or R2) from above, and the control system for controlling these various parts.

The above-mentioned stage device 101 has: a stage 22 constituting a not-shown stand; the above-mentioned two wafer stage WST1, WST2 are arranged on this stage 22, and can move in the XY plane; and an interferometer system for measuring wafer The positions of stage WST1 and WST2.

Wafer stages WST1 and WST2 are suspended above the platform 22 through unshown aerostatic bearings respectively provided on their bottom surfaces, and are supported with a gap of about several μm, for example, and are driven by X linear motors and Y The wafer stage drive system, such as linear motors, planar motors and other actuators, is independently and freely driven in the XY two-dimensional plane. The wafer drive system is controlled by the stage control device 160 of FIG. 11 .

Wafers W1 , W2 are fixed on wafer stages WST1 , WST2 by electrostatic adsorption or vacuum adsorption by wafer holders (not shown). The wafer holder is driven minutely in the Z-axis direction perpendicular to the XY plane and in a direction inclined to the XY plane by the above-mentioned horizontal mechanism 58 and a horizontal drive mechanism also not shown. On the upper surface of wafer stages WST1, WST2, fiducial mark plates FM1, FM2 on which various fiducial marks are formed are provided so as to have substantially the same height as wafers W1, W2. These fiducial mark plates FM1 and FM2 are used, for example, to detect the reference position of each wafer stage.

As shown in FIG. 12 , one side in the X-axis direction (the left side in FIG. 11 ) 120 and one side in the Y-axis direction (the rear side in FIG. 11 ) 121 of wafer stage WST1 are Mirror-processed reflective surfaces; similarly, the other side 122 in the X-axis direction (right side in FIG. 11 ) and one side 123 in the Y-axis direction of wafer stage WST2 are also mirror-processed reflective surfaces. Project the light beams from the interferometers of each length measuring axis (BI1X, BI2X, etc.) constituting the interference system described later to these reflective surfaces, and measure the distance from the reference position of each reflective surface by sensing each reflected light with each interferometer (generally, in projection optics). The side of the system and the side of the alignment detection system are equipped with fixed (reflecting) mirrors, which are used as the displacement of the reference plane), so as to measure the two-dimensional positions of the wafer stage WST1 and WST2 respectively. The configuration of the measuring axis of the interferometer system will be described in detail later.

As shown in FIG. 11, off-axis alignment detection systems 124a, 124b with the same function are provided on both sides of the projection optical system PL in the X-axis direction. The center (consistent with the projection center of the reduced mask image) is at the same distance from the center. These alignment detection systems 124a and 124b have three types of alignment sensors: LSA (Laser Step Alignment), FIA (Filed Image Alignment) and LIA (Laser Interferometric Alignment), which can measure the fiducial mark on the fiducial mark plate and the The position of the alignment mark in the X, Y two-dimensional directions.

The LSA system is the most general-purpose sensor. It irradiates a laser beam onto a mark and uses the diffracted and scattered light to measure the position of the mark. It has been widely used in wafer processing in the past. The FIA series sensor illuminates the mark with broadband light such as a halogen lamp, and measures the position of the mark by image processing the mark image, which is effectively used for asymmetrical marks on aluminum layers and wafer surfaces. The LIA-based sensor irradiates a diffraction grating-shaped mark with a laser beam whose frequency is slightly changed from two directions, and the two generated diffracted lights interfere with each other, and detects the position information of the mark based on its phase, which is effectively used for low steps. Poor and rough wafers.

The second embodiment uses these three types of alignment sensors flexibly according to the appropriate purpose, and performs so-called search alignment, detects the position of three-point one-dimensional marks on the wafer, and measures the approximate position on the wafer; and fine alignment, measures the wafer The exact position of each irradiation area on the

Alignment detection system 124a is used to measure the positions of alignment marks on wafer W1 held by wafer stage WST1 and fiducial marks formed on fiducial mark plate FM1, and the like. Alignment detection system 124b is used to measure the positions of alignment marks on wafer W2 held by wafer stage WST2 and fiducial marks formed on fiducial mark plate FM2, and the like.

Information from each of the alignment sensors constituting these alignment detection systems 124a and 124b is A/D converted via the alignment control device 180, and arithmetic processing is performed on the digitized waveform signal to detect the mark position. The result is transmitted to the main control device 190 , and based on the result, the main control device 190 issues instructions such as correction of the synchronization position during exposure to the stage control device 160 .

Although illustration is omitted, as disclosed in the aforementioned Japanese Patent Application Laid-Open No. 10-163098 and its corresponding U.S. Patent No. 6,400,441/6,341,007, etc., the projection optical system PL and the alignment detection systems 124a and 124b are respectively provided for inspection. Auto Focus/Auto Leveling (AF/AL) Measuring Mechanism for Focus Position.

Next, the reduction mask driving mechanism will be described with reference to FIGS. 11 and 12 .

The shrinking mask driving mechanism has: the shrinking mask stage RST, which supports the shrinking mask R1, R2, and can move on the shrinking mask base platform 28 along the XY two-dimensional direction; the driving system 29, It consists of an unillustrated linear motor for driving the reduced mask stage RST; and a reduced mask laser interferometer 30, through a moving mirror 31 fixed on the reduced mask stage RST, Determine the position of the reduced mask stage RST.

The following will be described in more detail. As shown in FIG. 12, on the shrinking mask stage RST, two shrinking mask plates R1 and R2 can be arranged in series along the scanning direction (Y-axis direction). The template stage RST is suspended and supported on the shrinking mask base platform 28 through an aerostatic bearing not shown in the figure, and the micro-drive in the X-axis direction, the micro-rotation in the θz direction, and the Y-axis are performed through the drive system 29 . Direction scan drive. The drive system 29 is a mechanism that uses a linear motor as a drive source, and for the convenience of illustration and description, only a block is shown in FIG. 11 . For example, when the reduced mask plates R1 and R2 on the reduced mask plate stage RST are selected for double exposure, the reduced mask plates of either side can be scanned synchronously with the wafer side.

At the end of the other side (+X side) of the X-axis direction on the reduced mask stage RST, a material made of the same material as the reduced mask stage RST (such as ceramics) is extended along the Y-axis direction. etc.), the surface on the other side in the X-axis direction of the movable mirror 31x forms a reflection surface by mirror finishing. An interferometer beam from an interferometer (not shown) represented by the length-measuring axis BI6X is irradiated onto the reflective surface of the moving mirror 31x, and the relative displacement with respect to the reference plane is measured by receiving the reflected light with the interferometer, Thereby, the position of the reduced mask stage RST is determined. The interferometer with the length measuring axis BI6X actually has two optical axes of the interferometer that can be measured independently, and can measure the position and swing amount of the shrinking mask stage in the X-axis direction. The function of the measured value of the interferometer having the measuring axis BI6X is to eliminate the gap between the shrink mask and the wafer based on the swing information and X position information of the wafer stage WST1 and WST2 measured by the interferometer 116 and 118. Rotational control of the reduced reticle stage RST or synchronous control in the X-axis direction relative to the direction of rotation (rotational error), wherein the interferometers 116 and 118 have BI1X and BI2X on the wafer stage side described later .

On the other hand, a pair of triangular prisms 31 _y1 and 31 _y2 are provided on the other side of the Y-axis direction (the front side of the paper in FIG. 11 ) in the scanning direction of the reticle stage RST. A pair of interferometers with two optical paths not shown in the _figure illuminate the interferometer beams represented by the measuring axes _{BI7Y and BI8Y} in FIG. Reflecting surface (not shown) on the seat platform 28, each reflected light after this reflection returns to the same optical path, and the light is received by the respective double optical path interferometer, thereby measuring the reference position (reference position) apart from each triangular prism _31y1 , _31y2 The reflective surface on the base platform 28 of the above-mentioned contracted mask at the position) is relatively displaced. The measured values of these two optical path interferometers are supplied to the stage control device 160 in FIG. 11 , and the position of the reduced mask stage RST in the Y-axis direction is measured based on the average value thereof. The purpose of the positional information in the Y-axis direction is to calculate the relative position of the reticle stage RST and the wafer stage WST1 or WST2 based on the measured value of the interferometer having the wafer-side length-measuring axis BI3Y, And based on this, the synchronous control of the shrinking mask plate and the wafer in the scanning direction (Y-axis direction) during scanning exposure.

In this way, in this second embodiment, a total of three interferometers constitute the initial mask blank laser shown in FIG. Interferometer 30.

Next, an interferometer system for managing the positions of wafer stages WST1 and WST2 will be described with reference to FIGS. 11 to 13 .

As shown in these figures, along the X-axis passing through the projection center of the projection optical system PL and the detection centers of the alignment detection systems 124a, 124b, toward the surface of the wafer stage WST1 on the X-axis direction side, the radiation for irradiation The interferometer beam represented by the measuring axis BI1X of the interferometer 116 in FIG. Interferometer beam represented by major axis BI2X. The X-axis direction positions of wafer stages WST1 and WST2 are measured by interferometers 116 and 118 receiving these reflected lights and measuring the relative displacement from the reference position of each reflecting surface.

As shown in FIG. 12, the interferometers 116, 118 are 3-axis interferometers each having three optical axes, and can measure the left and right tilt (horizontal (θy rotation) ) and swing (θz rotation). At this time, since the horizontal drive mechanism (not shown) that performs micro-drive and tilt drive in the Z-axis direction of wafer stages WST1 and WST2 is actually located under the reflective surfaces (120-123), the movement of the wafer stage is performed. All the driving amounts during tilt control can be monitored by these interferometers 116 and 118 .

Each interferometer beam of the measuring axis BI1X, BI2X always shines on the wafer stage WST1, WST2 in the whole area of the movement range of the wafer stage WST1, WST2, so, in the X-axis direction, the projection optical system PL is used. When performing exposure, when either of the alignment detection systems 124a, 124b is used, the positions of the wafer stages WST1, WST2 can be managed based on the measured values of the measuring axes BI1X, BI2X.

As shown in Fig. 12 and Fig. 13, an interferometer 132 is provided, and its length-measuring axis BI3Y intersects perpendicularly with the X-axis at the projection center (optical axis AX) of the projection optical system PL; Axes BI4Y, BI5Y perpendicularly intersect the X-axis at each detection center (optical axis SX) of alignment detection systems 124a, 124b.

In this embodiment, in order to measure the positions in the Y-axis direction of wafer stages WST1 and WST2 when exposure is performed using projection optical system PL, the measurement value of interferometer 132 is used, and its long-measurement axis BI3Y passes through the projection center, That is, the optical axis AX; in order to measure the position of the wafer stage WST1 in the Y-axis direction when the alignment detection system 124a is used, the measured value of the interferometer 131 is used, and its long-measurement axis BI4Y passes through the detection center of the alignment detection system 124a, That is, the optical axis SX; in order to measure the position of the wafer stage WST2 in the Y-axis direction when the alignment detection system 124b is used, the measured value of the interferometer 133 is used, and its long-measurement axis BI5Y passes through the detection center of the alignment detection system 124b, That is, the optical axis SX.

Therefore, depending on the conditions of use, the measuring axis of the interferometer in the Y-axis direction will deviate from the reflective surfaces of wafer stages WST1 and WST2, but at least one measuring axis, that is, the measuring axes BI1X and BI2X will not deviate from the reflective surfaces of wafer stages WST1 and WST2. Therefore, the interferometer on the Y side can be reset at an appropriate position where the optical axis of the interferometer used enters the reflective surface.

The interferometers 132, 131, and 133 of the above-mentioned Y measuring axes BI3Y, BI4Y, and BI5Y are two-axis interferometers each having two optical axes, and in addition to measuring the Y-axis directions of wafer stages WST1, WST2, Fore-and-aft tilt (longitudinal (θx) rotation) can be measured. In this embodiment, a total of five interferometers 116 , 118 , 131 , 132 , and 133 constitute an interferometric system for managing the two-dimensional coordinate positions of wafer stages WST1 and WST2 .

Also, main controller 190 shown in FIG. 11 is provided with memory 191 storing conditional formulas (for example, interference conditions) for managing movement of wafer stages WST1 and WST2 .

As will be described later, in the second embodiment, when one of wafer stages WST1 and WST2 executes the exposure process, the other executes the wafer exchange and wafer alignment processes. Mutual interference is based on the output values of the respective interferometers, and the movements of wafer stages WST1 and WST2 are managed by stage controller 160 in accordance with instructions from main controller 190 .

The above-mentioned control system is centered on the main control device 190 which manages the entire control device, and is composed of the exposure amount control device 170 and the stage control device 160 under the control of the main control device 190 .

Next, the operation of the exposure apparatus 110 according to the present embodiment when performing exposure will be described centering on the operation of each part of the above-described configuration of the control system.

First, through the stage control device 160, according to the instructions of the main control device 190, start to shrink the mask plate R1 (or R2) and the wafer W1 (or W2), that is, shrink the mask plate stage RST and the wafer stage Synchronous scanning of WST1 (or WST2). This synchronous scanning is by monitoring the measured values of the measuring axis BI3Y and the measuring axis BI1X or BI2X of the above-mentioned interferometer system, and the measuring axis BI7Y, BI8Y and the measuring axis BI6X of the laser interferometer 30 of the shrinking mask plate, and at the same time It is realized by controlling the shrinking mask driving unit 29 and the wafer stage driving system by the stage control device 160 .

At the moment when the uniform speed of the two stages is controlled within the specified allowable error, the exposure amount control device 170 starts the light source 11 to emit light. In this way, using the illumination light from the illumination optical system 18, the rectangular illumination area IA (refer to FIG. 12 ) of the initial reduction mask plate R1 (or R2) on which the pattern is deposited by chromium vapor deposition is illuminated, and the pattern in the illumination area IA is The image is reduced to 1/4 (or 1/5) times by the projection optical system PL, and projected onto the wafer W1 (or W2) whose surface is coated with photoresist, forming its reduced image on the wafer (partial inversion). Here, it can be clearly seen from FIG. 12 that the slit width in the scanning direction of the illumination area IA is narrower than the pattern area on the reduced mask R1 (or R2), and the reduced mask R1 (or R2) and the wafer are scanned synchronously. W1 (or W2), the irradiated area on the wafer sequentially forms the overall image of the pattern.

At this time, while starting the aforementioned pulse light emission, the exposure control device 170 drives the vibrating mirror 18D, before the pattern area on the shrink mask R1 (or R2) completely passes through the illumination area IA (refer to FIG. 12 ), that is, the pattern area This control is continuously performed to reduce the speckle of interference fringes produced by the two fly-eye lens systems until the overall image of the pattern is formed on the illuminated area on the wafer.

In the above-mentioned scanning exposure process, in order to prevent the illuminating light from leaking out of the light-shielding area on the shrinking mask R1 (or R2) at the edge of the irradiation, the driving system 43 drives and controls the movable blind 18M to make the shrinking mask The scanning of R1 (or R2 ) and wafer W1 (or W2 ) can be performed synchronously, and the series of synchronous operations are managed by the stage control device 160 .

When performing the above-mentioned scanning exposure, as disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 10-163098 and its corresponding U.S. Patent No. 6,400,441/6,341,007, etc., in order to achieve a cumulative exposure amount corresponding to the sensitivity of the resist layer, use The main control device 190 or the exposure amount control device 170 calculates all the variables of the irradiation energy and the oscillation frequency. By controlling the dimming system installed in the light source 11, the irradiation energy and the oscillation frequency can be changed, or the light intensity in the light source 11 can be controlled. shutter and vibrating mirror.

In addition, exposure apparatus 110 of the present embodiment includes a first transport system for exchanging wafers with wafer stage WST1 and a second transport system for exchanging wafers with wafer stage WST2 .

As shown in FIG. 14, the first transport system performs wafer exchange between wafer stage WST1 located at the wafer loading position on the left as will be described later. The first transfer system is made up of a first wafer loader and a first central lifter 181, wherein the formation of the first wafer loader includes: a first loading guide 182 extending along the Y-axis direction; The moving first slider 186 and the second slider 187; the first unloading arm 184 installed on the first slider 186; the first loading arm 188 installed on the second slider 187, etc., the first central jacking The device 181 is composed of three vertically moving parts provided on the wafer stage WST1.

Next, the operation of exchanging wafers by this first transfer system will be briefly described.

Referring to FIG. 14, a description will be given of a case where wafer W1' on wafer stage WST1 at the left wafer loading position is exchanged with wafer W1 transported by the first wafer loader.

First, the main controller 190 cuts off the vacuum of the wafer rack (not shown) on the wafer stage WST1 through a switch (not shown), and releases the suction of the wafer W1'.

Then, the main controller 190 raises the center jack 181 by a predetermined amount by a center jack drive system (not shown). Thus, the wafer W1' is lifted to a predetermined position. In this state, the main control unit 190 instructs a not-shown wafer loading control unit to move the first unloading arm 184 . In this way, the first slider 186 is driven and controlled by the wafer loading control device, and the first unloading arm 184 moves along the loading guide 182 onto the wafer stage WST1, and is located directly below the wafer W1'.

In this state, the main control device 190 drives the center jack 181 to descend to a predetermined position. During the descending process of the central lifter 181, the wafer W1' is handed over to the first unloading arm 184, so the main control device 190 instructs the wafer loading control device to start the vacuum of the first unloading arm 184. Thus, the wafer W1' is sucked and held by the first unloading arm 184.

Then, the main control device 190 instructs the wafer loading control device to retract the first unloading arm 184 and start moving the first loading arm 188 . Thus, the first unloading arm 184 starts to move integrally with the first slider 186 in the -Y direction of FIG. When the first loading arm 188 comes above the wafer stage WST1, the second slider 187 is stopped by the wafer loading control device, and the vacuum of the first loading arm 188 is released at the same time.

In this state, the main control device 190 drives the center lifter 181 to rise, and the wafer W1 is brought up by the center lifter 181 from below. Thereafter, the main control device 190 instructs the wafer loading control device to retract the loading arm. In this way, the second slider 187 starts to move integrally with the first loading arm 188 in the −Y direction, and the first loading arm 188 retracts. At the same time when the first loading arm 188 began to retreat, the main control device 190 began to drive the central lifter 181 to make it descend, and placed the wafer W1 on an unillustrated wafer rack on the wafer stage WST1, and turned on Vacuum the wafer holder. Thus, a series of procedures of wafer exchange are completed.

Also, as shown in FIG. 15, the second transfer system performs the same wafer exchange as above between wafer stage WST2 located at the wafer loading position on the right side. The second transfer system is composed of a second wafer loader and an unillustrated second central lifter arranged on the wafer stage WST2, wherein the second wafer loader includes: The second loading guide 192; the third slider 196 and the fourth slider 200 moving along the second loading guide 192; the second unloading arm 194 installed on the third slider 196, installed on the fourth slider 200 on the second loading arm 198 and so on.

Next, parallel processing performed by two wafer stages WST1 and WST2 will be described with reference to FIGS. 14 and 15 .

FIG. 14 shows a plan view during the exposure operation of wafer W2 on wafer stage WST2 by projection optical system PL, as described above, in the left loading position, between wafer stage WST1 and the first transfer system state when exchanging wafers between them. On wafer stage WST1, an alignment operation described later after wafer exchange is performed. In FIG. 14, the position control of wafer stage WST2 during the exposure operation is performed based on the measured values of the measuring axes BI2X and BI3Y of the interferometer system, and the position of wafer stage WST1 performing wafer exchange and alignment operations is The control is performed based on the measured values of the measuring axes BI1X and BI4Y of the interferometer system.

In the loading position on the left side shown in FIG. 14 , the fiducial mark on the fiducial mark plate FM1 of wafer stage WST1 is disposed in a state where it reaches directly below alignment detection system 124 a. Therefore, the main controller 190 resets the interferometer 131 of the measuring axis BI4Y of the interferometer system before measuring the fiducial mark on the fiducial mark plate FM1 by the alignment detection system 124a.

Search alignment is performed after the above-described wafer exchange and resetting of the interferometer 131 . In the search alignment performed after the wafer exchange, the positional error is large only by the pre-alignment performed during the transfer of the wafer W1, so the pre-alignment is performed again on the wafer stage WST1. Specifically, the positions of three search alignment marks (not shown) formed on wafer W1 provided on stage WST1 are measured using an LSA-based sensor or the like of alignment detection system 124a, and based on the measurement results, Alignment in the X, Y, and θ directions on the wafer W1 is performed. The operation of each part when performing the search and alignment is controlled by the main controller 190 .

After the search alignment is completed, EGA-based wafer alignment (fine alignment) is performed to obtain the array coordinates of the shot regions on the wafer W1. Specifically, the position of wafer stage WST1 is managed by the interferometer system (measuring axes BI1X, BI4Y), and wafer stage WST1 is sequentially moved based on the designed irradiation array data (alignment mark position data) At the same time, use the FIA sensor of the alignment detection system 124a to measure the position of the alignment mark irradiated by the specified sample on the wafer W1, and perform statistical calculations using the least square method based on the measurement results and the design coordinate data of the irradiation arrangement. All irradiation array data. The operation of each part when this EGA is performed is controlled by the main control device 190 , and the above calculation is performed by the main control device 190 . It is preferable to convert the calculation result into a coordinate system based on the position of the fiducial mark on the fiducial mark plate FM1.

In this embodiment, when the measurement is performed by the alignment detection system 124a, as in the case of exposure, the measurement and control of the AF/AL mechanism are used to perform automatic focus/automatic leveling, and at the same time to measure the position of the alignment mark. There is no offset (error) due to the attitude of the stage between alignment and exposure.

During the above-mentioned wafer exchange and alignment operations on the wafer stage WST1 side, on the wafer stage WST2 side, use two shrink reticles R1 and R2 to continuously perform the step-and-scan method while changing the exposure conditions. double exposure.

Specifically, similar to the aforementioned wafer W1 side, the EGA system fine alignment is performed in advance, and based on the irradiation array data on the wafer W2 obtained from the result (based on the fiducial marks on the fiducial mark plate FM2), the wafers are sequentially aligned. The movement (stepping) between adjacent shots of W2 sequentially performs the aforementioned scanning exposure on each shot region on wafer W2. When performing the above-mentioned moving operation between shots, the same movement control of wafer stage WST2 as described in the above-mentioned first embodiment is performed. In this second embodiment, as described in the above-mentioned first embodiment, the synchronous control of the reticle stage and the wafer stage when exposing the shot area on the wafer is set in various settings. Information (including setting information of control parameters), for each irradiation area in the constant speed overscanning time after the exposure of each irradiation area, or for each next line in the moving action between the irradiations of different lines, from the master The control device 190 transmits to the stage control device 160 . At this time, all necessary information other than the information from the reticle interferometer 30, the laser interferometer system, and the aforementioned AF/AL measurement mechanism that may be sampled frequently by the stage control device 160 are all provided by the host at the above timing. The control device 190 transmits, and at the same time, in order to realize fast processing, the parameter setting information related to the synchronous control is preferably transferred to the stage control device 160 as a determinant in a state that can be processed most quickly. In addition, in order to shorten the synchronous stabilization time and improve the production capacity, the stage control device 160 preferably completes the two stage stages corresponding to the above-mentioned setting information before the synchronous stabilization period of the two stage stages before the exposure of each exposure. station position setting.

Exposure to all shot regions on the above-mentioned wafer W2 can be performed continuously even after the reticle is exchanged. Specifically, as the exposure sequence of the double exposure, for example, after sequentially performing scanning exposure on each shot region of the wafer W1 using the reduced reticle R2, the reduced reticle stage RST is moved by a predetermined amount in the scanning direction, and the reduced reticle After the reduced mask template R1 is set at the exposure position, scan exposure is performed in the reverse order to the above. At this time, the exposure conditions (AF/AL, exposure amount) and transmittance of the reduced mask R2 and the reduced mask R1 are different, so it is necessary to measure the conditions separately when performing the reduced mask alignment, and based on the results Change conditions.

The operation of each part during the double exposure of the wafer W2 is also controlled by the main controller 190 .

The exposure process and the wafer exchange/alignment process performed in parallel on the two wafer stages WST1 and WST2 shown in FIG. 14 above are in a waiting state on the wafer stage that is completed earlier, and the operations of both parties are completed. At the next moment, wafer stage WST1, WST2 is controlled to move to the position shown in FIG. 15 . The wafer W2 on the wafer stage WST2 after the exposure process is completed, and the wafer is exchanged at the loading position on the right side, and the wafer W1 on the wafer stage WST1 after the alignment process is completed, and the exposure process is performed under the projection optical system PL .

The loading position on the right side shown in FIG. 15 is the same as the loading position on the left side. It is configured so that the fiducial mark on the fiducial mark plate FM2 reaches the state below the alignment detection system 124b, and then the aforementioned wafer exchange operation and alignment procedure are performed. . Naturally, the reset operation of the interferometer of the measuring axis BI5Y of the interferometer system is performed before the detection of the fiducial mark on the fiducial mark plate FM2 by the alignment detection system 124b.

The reset operation of the interferometer performed during the above-mentioned series of parallel processing operations controlled by the main control device 190 is the same as the operation disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 10-163098 and its corresponding U.S. Patent No. 6,400,441/6,341,007 exactly the same.

As described above, according to the exposure apparatus 110 of the second embodiment, the movements of the wafer stages WST1 and WST2 performed in parallel with the movement of the reticle RST in the scanning direction necessary for exposing each wafer are performed. During the movement operation between irradiations, the movement control of wafer stages WST1 and WST2 is performed in the same manner as in the description of the above-mentioned first embodiment, so by shortening the movement time between irradiations of wafer stages WST1 and WST2, a high speed can be realized. Double exposure under production capacity. The reason is that, for example, as disclosed in JP-A-10-163098 and its corresponding U.S. Patent No. 6,400,441/6,341,007, an exposure apparatus having a double wafer stage, for example, sets each processing time to T1 (Wafer Exchange Time), T2 (Search Alignment Time), T3 (Fine Alignment Time), T4 (Single Exposure Time), when performing double exposure while processing T1, T2, T3, and T4 side by side, if it is 8 inches Since the wafer has a long exposure time, the exposure time becomes a constraint and determines the overall production capacity. However, in the second embodiment, the exposure time T4 can be shortened by shortening the movement time between the irradiations of the wafer stage WST1 and WST2. .

In addition, in the second embodiment, when double exposure is performed using a plurality of reduced reticles R1 and R2, the effect of high resolution and improvement of DOF (depth of focus) can be obtained. In the second embodiment, by simultaneously processing the exposure operation on one wafer stage and the alignment and wafer exchange operations on the other wafer stage in parallel, the throughput can be greatly improved, and the throughput can be obtained without reducing the throughput. Get high resolution and improve DOF (depth of focus) effect.

Of course, when the exposure device 110 of the second embodiment performs ordinary exposure without double exposure, in addition to obtaining the same effect as that of the first embodiment, it can further improve Improve production capacity.

When two wafer stages WST1 and WST2 are used as in the second embodiment and different operations are processed in parallel at the same time, the operation performed on one stage may affect the operation of the other stage (external disturbance). In this case, it is preferable to perform the operation timing adjustment performed on the two stages WST1 and WST2 as disclosed in FIGS. 11 to 13 and their descriptions in JP-A-10-163098. For example, the timing of acceleration and deceleration of two wafer stages is adjusted, for example, when performing scanning exposure on a wafer on one wafer stage, the alignment measurement operation of the wafer on the other wafer stage is performed, etc. Each action that does not affect each other (or has little influence) is carried out in parallel.

Although the description is somewhat delayed, the exposure apparatus 110 of the second embodiment has performed the following studies in order to avoid collisions between wafer stages WST1 and WST2.

That is, when the control information of each row or each wafer is transmitted from the main control device 190 to the stage control device 160, the transmitted information includes the relevant error information (detection error) of each mechanism part when the stage moves. Use, or error response information) and the expected position coordinates of the two-wafer stage, etc. Therefore, in the foregoing parallel processing operations, when one of the wafer stages performing alignment makes some kind of error such as stopping within the moving range of the other wafer stage performing exposure, the stage control device 160 can When the distance between the two is within a predetermined distance, the other wafer stage is stopped in an emergency so that the one wafer stage does not collide with the other wafer stage.

In the above-mentioned second embodiment, the case where the stage device according to the present invention is applied to a device for exposing wafers using a double exposure method has been described, but it can also be applied to stitching of the same technique. In this case, in one During two exposures with two shrinking mask plates on the wafer stage side, wafer exchange and wafer alignment are performed in parallel on the independently movable side of the other wafer stage. suture production capacity.

However, the scope of application of the stage device according to the present invention is not limited thereto, and the present invention is also very suitable for exposure by a single exposure method.

The above-mentioned second embodiment describes the case where the alignment operation, the wafer exchange operation, and the exposure operation are processed in parallel, but it is not limited thereto. Quasi-equal procedures can also be processed in parallel with the exposure action.

The illumination light for exposure in each of the above-mentioned embodiments uses ultraviolet light with a wavelength of 100 nm or more. Specifically, when using a KrF excimer laser beam, an ArF excimer laser beam, or an _F2 laser beam (wavelength 157 nm) is described. However, it is not limited thereto. For example, g-line, i-line, etc., which belong to the deep ultraviolet region of the KrF excimer laser beam, can also be used. In addition, harmonics of a YAG laser or the like may be used.

In addition, it is also possible to use a single-wavelength laser in the infrared region or visible region oscillated by a DFB semiconductor laser or fiber laser, for example, to amplify it with an erbium-doped (or both erbium and ytterbium) fiber amplifier, and then use a nonlinear optical crystal to convert is the higher harmonic of the wavelength of ultraviolet light. As an ultraviolet single-wavelength oscillation laser, for example, an ytterbium-doped fiber laser can be used.

In the exposure apparatus of each of the above-mentioned embodiments, the illumination light for exposure is not limited to light having a wavelength of 100 nm or more, and light having a wavelength of less than 100 nm may naturally be used. For example, in recent years, in order to expose patterns below 70nm, the EUV exposure device developed uses SOR and plasma lasers as light sources to generate EUV (Extreme Ultraviolet) light in the soft X-ray region (for example, the wavelength region of 5-15nm), At the same time, a total reflection reduction optical system designed for the exposure wavelength (for example, 13.5 nm) and a reflective mask are used. The structure considered by the device is to use circular arc illumination to synchronously scan the mask plate and the wafer for exposure, which is also included in the scope of application of the present invention.

In addition, the present invention can also be applied to an exposure apparatus using a charged particle beam such as an electron beam or an ion beam. For example, as an electron beam exposure device, a reticle projection type exposure device can be used to decompose and form circuit patterns on a plurality of sub-fields separated by about 250 nm from each other on the reticle, and move the electron beam sequentially along the first direction on the reticle At the same time, the mask plate is moved along the second direction perpendicular to the first direction, and synchronously with this, the wafer is relatively moved relative to the electron optical system that reduces the projection of the decomposed pattern, and the reduced image of the decomposed pattern is joined on the wafer to form a composite graphics.

In the above-mentioned embodiments, the case where the present invention is applied to a step-and-scan reduction projection exposure apparatus (step-and-scan exposure apparatus) has been described, but, for example, the present invention can also be applied to a mirror projection alignment proximity exposure apparatus (for example, using A scanning X-ray exposure apparatus in which a mask plate and a wafer are integrally moved relative to an arc-shaped illumination area irradiated with X-rays) and the like.

In addition, not only a reduction system but also an equal magnification system or a magnification system can be used as the projection optical system (for example, an exposure device for liquid crystal display production, etc.). Any one of a refractive system, a reflective system, and a dioptric reflective system may also be used for the projection optical system. The types of glass and coating materials that can be used for optical elements (especially refractive elements) are limited by the wavelength of the illumination light used for exposure, and the maximum aperture that can be manufactured for each type of glass is also different. For the exposure wavelength and its wavelength width (spectral half-value width), and the size of the field of view and the number of apertures of the projection optical system, any one of a refraction system, a reflection system, and a catadioptric reflection system is selected.

Generally, if the exposure wavelength is above about 190nm, synthetic quartz and fluorite can be used as glass, so it goes without saying that reflective system and refraction reflective system, and refraction system is also relatively easy to use. In addition, vacuum ultraviolet light with a wavelength of about 200nm or less can also use a refraction system according to its narrowed wavelength width. Especially when the wavelength is less than about 190nm, there is no suitable material for glass except fluorite, and its wavelength Narrowing is also difficult, so it is more advantageous to use a reflective system or a refraction reflective system. EUV light employs reflective systems consisting only of multiple (eg, about 3-6) reflective elements. The electron beam exposure apparatus can use an electron optical system composed of an electron lens and a deflector. Exposure in the vacuum ultraviolet region uses illumination light, fills the optical path with a gas that reduces its attenuation (for example, nitrogen, helium and other inert gases), or makes the optical path a vacuum, and uses EUV light or electron beams to make the optical path a vacuum.

The present invention is not only applicable to the exposure device for the manufacture of semiconductor devices, but also applicable to the exposure device for liquid crystals, plasma displays and organic EL and other display devices, thin film magnetic heads, imaging elements (CCD) to square glass plates. etc.), exposure devices for the manufacture of micromachines and DNA chips, and exposure devices for the manufacture of masks or shrink masks. In addition, it is not only suitable for micro-devices such as semiconductor devices, but also suitable for photoexposure equipment, EUV exposure equipment, proximity X-ray exposure equipment, and for the production of shrinkable masks or reticles used in electron beam exposure equipment. Exposure device for transferring circuit patterns on substrates or silicon wafers. Among them, using exposure devices such as light exposure devices (DUV light or EUV light), generally use a transmission type shrink mask, and the shrink mask substrate can use quartz glass, fluorine-doped quartz glass, fluorite, or crystal. wait. The EUV exposure device uses a reflective mask, while the proximity X-ray exposure device or mask projection electron beam exposure device uses a transmission mask (wax plate, film plate), and the mask substrate uses a silicon wafer.

In addition, the stage apparatus according to the present invention is applicable not only to photolithography apparatuses used in the manufacturing process of microdevices such as semiconductor devices represented by the above-mentioned exposure apparatuses, but also to laser repair apparatuses, inspection apparatuses, etc., for example. The present invention can also be applied to devices other than various devices used in the micro device manufacturing process. "Device Manufacturing Method"

Next, an embodiment of a device manufacturing method using the exposure apparatus of each embodiment described above in a photolithography process will be described.

FIG. 16 is a flowchart showing an example of manufacturing devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.). As shown in FIG. 16, first in step 201 (design step), the function and performance design of the device (for example, the circuit design of the semiconductor device, etc.) is performed, and the graphic design for realizing the function is performed. Then, in step 202 (mask manufacturing step), a mask plate on which the designed circuit pattern is formed is manufactured. On the other hand, in step 203 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.

Then, in step 204 (wafer processing step), using the mask and the wafer prepared in steps 201 to 203, actual circuits and the like are formed on the wafer by photolithography and the like as will be described later. Then, in step 205 (device assembly step), device assembly is performed using the wafer processed in step 204 . This step 205 may include a slicing process, a soldering process, and a packaging process (encapsulating chips) as required.

Finally, in step 206 (inspection step), the device produced in step 205 is subjected to inspections such as an operation confirmation test and a durability test. After this process, the device is manufactured and ready to leave the factory.

FIG. 17 shows an example of a detailed flow of the above-mentioned step 204 of the semiconductor device. In FIG. 17, in step 211 (oxidation step), the surface of the wafer is oxidized. In step 212 (CVD step), an insulating film is formed on the wafer surface. In step 213 (electrode forming step), electrodes are formed on the wafer by evaporation. In step 214 (ion implantation step), ions are implanted into the wafer. Each of the above steps 211 to 214 constitutes a preprocessing step for each stage of wafer processing, and necessary processing is selected and performed at each stage.

In each stage of the wafer process, after the above-mentioned pre-processing steps are completed, the following post-processing steps are performed. In this post-processing step, first, in step 215 (resist film forming step), a photosensitive agent is applied to the wafer. In step 216 (exposure step), the circuit pattern of the mask plate is transferred onto the wafer using the photolithography system (exposure apparatus) and exposure method described above. In step 217 (developing step), the exposed wafer is developed. In step 218 (etching step), exposed parts of parts other than the resist remaining part are removed by etching. In step 219 (resist removal step), unnecessary resist after the etching is completed is removed.

By repeating these pre-processing steps and post-processing steps, multiple circuit patterns are formed on the wafer.

According to the device manufacturing method of this embodiment described above, the exposure device of each of the above-mentioned embodiments is used in the exposure step (step 216), so the pattern of the reduced mask can be transferred to each shot area on the wafer W with high productivity. . As a result, high-integration device productivity (including yield) can be improved.

The above-mentioned embodiment of the present invention is a very good embodiment at present, but for those in the industry of the photolithography system, as long as they do not depart from the spirit and scope of the present invention, more additions, deformations, Substitutions are easy to imagine. All such additions, modifications, and substitutions are included within the scope of the present invention most precisely described by the claims.

Claims (56)

1. exposure device with moved further mask plate and object, is transferred to the figure of aforementioned mask plate in a plurality of zonings on the above-mentioned object on the direction of scanning of regulation successively, it is characterized in that having:

The mask plate objective table supports the aforementioned mask plate, can move on above-mentioned direction of scanning at least;

The object objective table supports above-mentioned object, can move in two dimensional surface;

The objective table control system is controlled above-mentioned two objective tables; With

Control device, behind the end exposure of an above-mentioned relatively zoning at the latest, to in order to carry out the exposure of next zoning, by above-mentioned objective table control system make above-mentioned two objective tables before the deceleration on the above-mentioned direction of scanning begins during, at least the set information of the required controlled variable of the exposure of next zoning is sent to above-mentioned objective table control system.

2. exposure device according to claim 1 is characterized in that, above-mentioned control device also sends above-mentioned set information to above-mentioned objective table control system when exposed in an above-mentioned zoning.

3. exposure device according to claim 2, it is characterized in that, above-mentioned control device is sending under the situation of above-mentioned set information when exposed in an above-mentioned zoning, sends the set information of the required controlled variable of the exposure of next and later a plurality of zonings.

4. exposure device according to claim 1 is characterized in that, above-mentioned objective table control system, during the synchronism stability of above-mentioned two objective tables before the exposure of above-mentioned next zoning before, end is according to the set positions of two objective tables of above-mentioned set information.

5. exposure device according to claim 1 is characterized in that,

Above-mentioned controlled variable comprises the relevant parameter of measuring before the exposure of the arrangement with above-mentioned zoning, above-mentioned set information comprises, the information of the amount of movement corrected value between the zoning of having considered to produce owing to the arrangement error of the zoning of the stage coordinate system of regulation relatively.

6. exposure device according to claim 5 is characterized in that,

The arrangement error of above-mentioned zoning comprises: at least one in the error dwindled in the amplification of side-play amount on stage coordinate system of the error of perpendicularity of the stage coordinate system that moves of the rotation error of above-mentioned object, the above-mentioned object of regulation, above-mentioned object, above-mentioned object.

7. exposure device according to claim 1 is characterized in that,

Above-mentioned objective table control system is controlled above-mentioned two objective tables, so that behind end exposure to a zoning on the above-mentioned object, in order to carry out the exposure of next zoning, make the action that helps away that above-mentioned two objective tables are accelerated after slowing down on the above-mentioned direction of scanning, and parallel simultaneously the carrying out of shift action between the above-mentioned object objective table zoning of moving on perpendicular to the non-direction of scanning of above-mentioned direction of scanning, and, the action that above-mentioned object objective table is moved to above-mentioned non-direction of scanning, during the synchronism stability of above-mentioned two objective tables before the exposure of above-mentioned next zoning before end.

8. exposure device according to claim 1 is characterized in that,

Above-mentioned objective table control system, between perpendicular to the zoning in the same delegation of the non-direction of scanning of above-mentioned direction of scanning, behind end exposure to a zoning, guaranteed that before reducing speed now behind the above-mentioned end exposure above-mentioned two objective tables are between the back stationary phase of at the uniform velocity moving on the above-mentioned direction of scanning, between different rows when mobile, behind end exposure to a zoning, the speed-down action of above-mentioned two objective tables that will begin in a minute.

9. exposure device according to claim 1 is characterized in that,

Above-mentioned objective table control system, between perpendicular to the zoning in the same delegation of the non-direction of scanning of above-mentioned direction of scanning, after above-mentioned two objective tables slow down on above-mentioned direction of scanning, quicken help away action the time, according to command value, control above-mentioned two objective tables according to the acceleration rate curve gained after the coding counter-rotating that has polarised.

10. exposure device according to claim 9 is characterized in that,

Above-mentioned objective table control system, when carrying out the shift action of above-mentioned two objective tables on above-mentioned direction of scanning between the zoning of the different row in above-mentioned non-direction of scanning, according to controlling above-mentioned object objective table according to the command value of the acceleration rate curve gained after four polarization.

11. exposure device according to claim 9 is characterized in that,

Above-mentioned objective table control system, make above-mentioned two objective tables above-mentioned between the above-mentioned zoning on the above-mentioned direction of scanning help away action parallel, command value according to according at least 2 utmost points being the acceleration rate curve gained after difform total four polarizes makes the shift action of above-mentioned object objective table between the zoning of moving on the above-mentioned non-direction of scanning.

12. a device making method that comprises photo-mask process is characterized in that, at above-mentioned photo-mask process, uses the described exposure device of claim 1 to expose.

13. an exposure device with moved further mask plate and object, is transferred to the figure of aforementioned mask plate in a plurality of zonings on the above-mentioned object on the direction of scanning of regulation successively, has:

The mask plate objective table supports the aforementioned mask plate, can move on above-mentioned direction of scanning at least;

The object objective table supports above-mentioned object, can move in two dimensional surface;

The objective table control system is controlled above-mentioned two objective tables; With

Control device, behind end exposure perpendicular to the final zoning in any row on the non-direction of scanning of the above-mentioned direction of scanning on the above-mentioned object, to in order to carry out the exposure of initial zonings of other row, carry out the mobile control period of above-mentioned two objective tables by above-mentioned objective table control system, the exposure of a plurality of zonings in above-mentioned other row is sent to above-mentioned objective table control system with the set information of required controlled variable.

14. exposure device according to claim 13 is characterized in that,

Above-mentioned objective table control system, during the synchronism stability of above-mentioned two objective tables of each zoning of above-mentioned other row before beginning to expose before, finish and the set positions of two objective tables that above-mentioned set information adapts.

15. exposure device according to claim 13 is characterized in that,

Above-mentioned controlled variable comprises the relevant parameter of measuring before the exposure of the arrangement with above-mentioned zoning, above-mentioned set information comprises, the information of the amount of movement corrected value between the zoning of having considered to produce owing to the arrangement error of the zoning of the stage coordinate system of regulation relatively.

16. exposure device according to claim 15 is characterized in that,

The arrangement error of above-mentioned zoning comprises: at least one in the error dwindled in the amplification of side-play amount on stage coordinate system of the error of perpendicularity of the stage coordinate system that moves of the rotation error of above-mentioned object, the above-mentioned object of regulation, above-mentioned object, above-mentioned object.

17. exposure device according to claim 13 is characterized in that,

Above-mentioned objective table control system is controlled above-mentioned two objective tables, so that behind end exposure to a zoning on the above-mentioned object, in order to carry out the exposure of next zoning, make the action that helps away that above-mentioned two objective tables are accelerated after slowing down on the above-mentioned direction of scanning, and the shift action between the above-mentioned object objective table zoning of moving on perpendicular to the non-direction of scanning of above-mentioned direction of scanning can walk abreast simultaneously and carries out, and, the action that above-mentioned object objective table is moved to above-mentioned non-direction of scanning, during the synchronism stability of above-mentioned two objective tables before the exposure of above-mentioned next zoning before end.

18. exposure device according to claim 13 is characterized in that,

Above-mentioned objective table control system, between perpendicular to the zoning in the same delegation of the non-direction of scanning of above-mentioned direction of scanning, after above-mentioned two objective tables slow down on above-mentioned direction of scanning, quicken help away action the time, according to command value, control above-mentioned two objective tables according to the acceleration rate curve gained after the coding counter-rotating that has polarised.

19. exposure device according to claim 18 is characterized in that,

Above-mentioned objective table control system, when carrying out the shift action of above-mentioned two objective tables on above-mentioned direction of scanning between the zoning of the different row in above-mentioned non-direction of scanning, according to controlling above-mentioned object objective table according to the command value of the acceleration rate curve gained after four polarization.

20. exposure device according to claim 18 is characterized in that,

Above-mentioned objective table control system, make above-mentioned two objective tables above-mentioned between the above-mentioned zoning on the above-mentioned direction of scanning help away action parallel, command value according to according at least 2 utmost points being the acceleration rate curve gained after difform total four polarizes makes the shift action of above-mentioned object objective table between the zoning of moving on the above-mentioned non-direction of scanning.

21. a device making method that comprises photo-mask process is characterized in that, at above-mentioned photo-mask process, uses the described exposure device of claim 13 to expose.

22. an exposure device with moved further mask plate and object, is transferred to the figure of aforementioned mask plate in a plurality of zonings on the above-mentioned object on the direction of scanning of regulation successively, has:

The mask plate objective table supports the aforementioned mask plate, can move on above-mentioned direction of scanning at least;

The object objective table supports above-mentioned object, can move in two dimensional surface;

The objective table control system is controlled above-mentioned two objective tables; With

Control device, with above-mentioned object on the regulation point of each zoning carry out the detection release of the needed arrangement information of location matches after, during before beginning to the exposure of No. 1 zoning, the set information of all exposures of the above-mentioned a plurality of zonings on the above-mentioned object, send above-mentioned objective table control system to required controlled variable.

23. exposure device according to claim 22 is characterized in that,

Above-mentioned objective table control system makes each zoning on the above-mentioned object, during the synchronism stability of above-mentioned two objective tables before exposure before, finish the set positions of two objective tables that adapt with above-mentioned set information.

24. exposure device according to claim 22 is characterized in that,

Above-mentioned controlled variable comprises the relevant parameter of measuring before the exposure of the arrangement with above-mentioned zoning, above-mentioned set information comprises, the information of the amount of movement corrected value between the zoning of having considered to produce owing to the arrangement error of the zoning of the stage coordinate system of regulation relatively.

25. exposure device according to claim 24 is characterized in that,

The arrangement error of above-mentioned zoning comprises: at least one in the error dwindled in the amplification of side-play amount on stage coordinate system of the error of perpendicularity of the stage coordinate system that moves of the rotation error of above-mentioned object, the above-mentioned object of regulation, above-mentioned object, above-mentioned object.

26. exposure device according to claim 22 is characterized in that,

Above-mentioned objective table control system is controlled above-mentioned two objective tables, so that behind end exposure to a zoning on the above-mentioned object, in order to carry out the exposure of next zoning, make the action that helps away that above-mentioned two objective tables are accelerated after slowing down on the above-mentioned direction of scanning, and the shift action between the above-mentioned object objective table zoning of moving on perpendicular to the non-direction of scanning of above-mentioned direction of scanning can walk abreast simultaneously and carries out, and, the action that above-mentioned object objective table is moved to above-mentioned non-direction of scanning, during the synchronism stability of above-mentioned two objective tables before the exposure of above-mentioned next zoning before end.

27. exposure device according to claim 22 is characterized in that,

Above-mentioned objective table control system, between perpendicular to the zoning in the same delegation of the non-direction of scanning of above-mentioned direction of scanning, after above-mentioned two objective tables slow down on above-mentioned direction of scanning, quicken help away action the time, according to command value, control above-mentioned two objective tables according to the acceleration rate curve gained after the coding counter-rotating that has polarised.

28. exposure device according to claim 27 is characterized in that,

Above-mentioned objective table control system, when carrying out the shift action of above-mentioned two objective tables on above-mentioned direction of scanning between the zoning of the different row in above-mentioned non-direction of scanning, according to controlling above-mentioned object objective table according to the command value of the acceleration rate curve gained after four polarization.

29. exposure device according to claim 27 is characterized in that,

Above-mentioned objective table control system, make above-mentioned two objective tables above-mentioned between the above-mentioned zoning on the above-mentioned direction of scanning help away action parallel, command value according to according at least 2 utmost points being the acceleration rate curve gained after difform total four polarizes makes the shift action of above-mentioned object objective table between the zoning of moving on the above-mentioned non-direction of scanning.

30. a device making method that comprises photo-mask process is characterized in that, at above-mentioned photo-mask process, uses the described exposure device of claim 22 to expose.

31. an exposure device with moved further mask plate and object, is transferred to the figure of aforementioned mask plate in a plurality of zonings on the above-mentioned object on the direction of scanning of regulation successively, has:

The mask plate objective table supports the aforementioned mask plate, can move on above-mentioned direction of scanning at least;

The object objective table supports above-mentioned object, can move in two dimensional surface; With

The objective table control system, control above-mentioned two objective tables, simultaneously behind end exposure, when above-mentioned two objective tables are decelerated, begin to carry out the expose synchro control of needed above-mentioned two objective tables of next zoning on above-mentioned direction of scanning to a zoning on the above-mentioned object.

32. exposure device according to claim 31 is characterized in that,

Above-mentioned objective table control system is controlled above-mentioned two objective tables, so that behind end exposure to a zoning on the above-mentioned object, in order to carry out the exposure of next zoning, make the action that helps away that above-mentioned two objective tables are accelerated after slowing down on the above-mentioned direction of scanning, and the shift action between the above-mentioned object objective table zoning of moving on perpendicular to the non-direction of scanning of above-mentioned direction of scanning can walk abreast simultaneously and carries out, and, the action that above-mentioned object objective table is moved to above-mentioned non-direction of scanning, during the synchronism stability of above-mentioned two objective tables before the exposure of above-mentioned next zoning before end.

33. a device making method that comprises photo-mask process is characterized in that, at above-mentioned photo-mask process, uses the described exposure device of claim 31 to expose.

34. an exposure device with moved further mask plate and object, is transferred to the figure of aforementioned mask plate in a plurality of zonings on the above-mentioned object on the direction of scanning of regulation successively, has:

The mask plate objective table supports the aforementioned mask plate, can move on above-mentioned direction of scanning at least;

The object objective table supports above-mentioned object, can move in two dimensional surface; With

The objective table control system, when controlling above-mentioned two objective tables, between perpendicular to the zoning in the same delegation of the non-direction of scanning of above-mentioned direction of scanning, quicken after above-mentioned two objective tables are slowed down on above-mentioned direction of scanning help away action the time, according to command value, control above-mentioned two objective tables according to the acceleration rate curve gained after the coding counter-rotating that has polarised.

35. a device making method that comprises photo-mask process is characterized in that, at above-mentioned photo-mask process, uses the described exposure device of claim 34 to expose.

36. exposure device according to claim 35 is characterized in that,

Above-mentioned objective table control system, between the back stationary phase that makes above-mentioned two objective tables carry out at the uniform velocity moving before above-mentioned deceleration begins after to above-mentioned zoning end exposure, set to such an extent that be longer than during the synchronism stability of above-mentioned two objective tables before the exposure beginning, set the peak value of the acceleration rate curve behind the end exposure of zoning greater than the peak value of the preceding acceleration rate curve of exposure beginning simultaneously.

37. exposure device according to claim 34 is characterized in that,

Acceleration rate curve after the above-mentioned coding counter-rotating that has polarised can be identical shaped.

38. exposure device according to claim 34 is characterized in that,

Above-mentioned objective table control system, between the zoning of the different row in above-mentioned non-direction of scanning, when carrying out the shift action of above-mentioned two objective tables on above-mentioned direction of scanning, can control above-mentioned object objective table according to command value according to the acceleration rate curve gained after four polarization.

39. according to the described exposure device of claim 38, it is characterized in that,

Acceleration rate curve after above-mentioned four polarization is the different shape in the two poles of the earth at least.

40. exposure device according to claim 34 is characterized in that,

Above-mentioned objective table control system, make above-mentioned two objective tables above-mentioned between the above-mentioned zoning on the above-mentioned direction of scanning help away action parallel, command value according to according at least 2 utmost points being the acceleration rate curve gained after difform total four polarizes makes the shift action of above-mentioned object objective table between the zoning of moving on the above-mentioned non-direction of scanning.

41. exposure device according to claim 34 is characterized in that,

Above-mentioned objective table control system is controlled above-mentioned two objective tables, so that behind end exposure to a zoning on the above-mentioned object, in order to carry out the exposure of next zoning, make the action that helps away that above-mentioned two objective tables are accelerated after slowing down on the above-mentioned direction of scanning, and the shift action between the above-mentioned object objective table zoning of moving on perpendicular to the non-direction of scanning of above-mentioned direction of scanning can walk abreast simultaneously and carries out, and, the action that above-mentioned object objective table is moved to above-mentioned non-direction of scanning, during the synchronism stability of above-mentioned two objective tables before the exposure of above-mentioned next zoning before end.

42. a device making method that comprises photo-mask process is characterized in that, at above-mentioned photo-mask process, uses the described exposure device of claim 34 to expose.

43. an exposure device with moved further mask plate and object, is transferred to the figure of aforementioned mask plate in a plurality of zonings on the above-mentioned object on the direction of scanning of regulation successively, has:

The mask plate objective table supports the aforementioned mask plate, can move on above-mentioned direction of scanning at least;

The object objective table supports above-mentioned object, can move in two dimensional surface; With

The objective table control system, control above-mentioned two objective tables, simultaneously, between perpendicular to the zoning in the same delegation of the non-direction of scanning of above-mentioned direction of scanning, behind end exposure, before reducing speed now behind the above-mentioned end exposure, guarantee above-mentioned two objective tables between the back stationary phase of at the uniform velocity moving on the above-mentioned direction of scanning, between different rows when mobile to a zoning, behind the end exposure of a relative zoning, the speed-down action of above-mentioned two objective tables that will begin in a minute.

44. according to the described exposure device of claim 43, it is characterized in that,

Above-mentioned objective table control system is controlled above-mentioned two objective tables, so that behind end exposure to a zoning on the above-mentioned object, in order to carry out the exposure of next zoning, make the action that helps away that above-mentioned two objective tables are accelerated after slowing down on the above-mentioned direction of scanning, and the shift action between the above-mentioned object objective table zoning of moving on perpendicular to the non-direction of scanning of above-mentioned direction of scanning can walk abreast simultaneously and carries out, and, the action that above-mentioned object objective table is moved to above-mentioned non-direction of scanning, during the synchronism stability of above-mentioned two objective tables before the exposure of above-mentioned next zoning before end.

45. a device making method that comprises photo-mask process is characterized in that, at above-mentioned photo-mask process, uses the described exposure device of claim 43 to expose.

46. an exposure device with moved further mask plate and object, is transferred to the figure of aforementioned mask plate in a plurality of zonings on the above-mentioned object on the direction of scanning of regulation successively, has:

The mask plate objective table supports the aforementioned mask plate, can move on above-mentioned direction of scanning at least;

Two object objective tables support above-mentioned object respectively, and can move in two dimensional surface single-handedly; With

The objective table control system, parallel with the predetermined processing of on above-mentioned any one object objective table, carrying out, when carrying out the exposure to a plurality of zonings on the object that supports by another object objective table, between perpendicular to the zoning in the same delegation of the non-direction of scanning of above-mentioned direction of scanning, after aforementioned mask plate objective table and above-mentioned another object objective table slow down on above-mentioned direction of scanning, quicken help away action the time, according to the command value according to the acceleration rate curve gained after the coding counter-rotating that has polarised, control aforementioned mask plate objective table and above-mentioned another object objective table.

47. according to the described exposure device of claim 46, it is characterized in that,

Above-mentioned objective table control system, between the zoning of the different row in above-mentioned non-direction of scanning, when aforementioned mask plate objective table and above-mentioned another objective table carry out shift action on above-mentioned direction of scanning, can control above-mentioned the opposing party's object objective table according to command value according to the acceleration rate curve gained after four polarization.

48. according to the described exposure device of claim 46, it is characterized in that,

Above-mentioned objective table control system, make above-mentioned between the above-mentioned zoning on the above-mentioned direction of scanning of aforementioned mask plate objective table and above-mentioned the opposing party's objective table help away action parallel, command value according to according at least two extreme values being the acceleration rate curve gained after difform total four polarizes makes the shift action of above-mentioned the opposing party's object objective table between the zoning of moving on the above-mentioned non-direction of scanning.

49. according to the described exposure device of claim 46, it is characterized in that,

Also have the Mark Detection system, detect the sign that is formed on the above-mentioned object,

Afore mentioned rules is handled and to be comprised: utilize above-mentioned Mark Detection system to detect the Mark Detection that is formed on the object and handle, this object is placed on above-mentioned any one object objective table.

50. a device making method that comprises photo-mask process is characterized in that, at above-mentioned photo-mask process, uses the described exposure device of claim 46 to expose.

51. an exposure device with moved further mask plate and object, is transferred to the figure of aforementioned mask plate in a plurality of zonings on the above-mentioned object on the direction of scanning of regulation successively, it is characterized in that having:

The mask plate objective table supports the aforementioned mask plate, can move on above-mentioned direction of scanning at least;

The object objective table supports above-mentioned object, and can move in two dimensional surface; With

The objective table control system is controlled above-mentioned two objective tables,

Above-mentioned objective table control system, between perpendicular to the zoning in the same delegation of the non-direction of scanning of above-mentioned direction of scanning, behind end exposure to a zoning, above-mentioned two objective tables are between the back stationary phase of at the uniform velocity moving on the above-mentioned direction of scanning, and beginning is at the shift action of the above-mentioned direction of scanning of the enterprising enforcement of above-mentioned object objective table and the parallel simultaneously shift action of shift action of above-mentioned non-direction of scanning.

52. according to the described exposure device of claim 51, it is characterized in that,

Above-mentioned objective table control system before the beginning, is carried out above-mentioned parallel simultaneously shift action on above-mentioned object objective table during to the synchronism stability of above-mentioned two objective tables before the exposure of next zoning.

53. according to the described exposure device of claim 52, it is characterized in that,

Above-mentioned objective table control system is controlled above-mentioned object objective table, so that before beginning during the synchronism stability, finish the shift action of above-mentioned non-direction of scanning.

54. according to the described exposure device of claim 53, it is characterized in that,

Above-mentioned objective table control system behind the end exposure of an above-mentioned relatively zoning, begins above-mentioned parallel simultaneously shift action at once on above-mentioned object objective table.

55. an objective table device has:

Objective table is used for supporting object, and can move in two dimensional surface; With

The objective table control system, control above-mentioned objective table, make the 1st direction of principal axis shift action that above-mentioned objective table is accelerated and carry out in that the 2nd direction of principal axis shift action that moves perpendicular to the above-mentioned the 1st axial the 2nd direction of principal axis is parallel simultaneously after the 1st direction of principal axis of regulation slows down, simultaneously, when carrying out above-mentioned the 1st direction of principal axis shift action, according to command value, control above-mentioned objective table according to the acceleration rate curve gained after the coding counter-rotating that has polarised.

56. according to the described objective table device of claim 55, it is characterized in that,

Above-mentioned objective table control system when carrying out above-mentioned the 2nd direction of principal axis shift action, is different shapes, adds up to the command value of the acceleration rate curve gained after four polarization according at least two extreme values, controls above-mentioned objective table.

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