CN1450383A - Clad modulation wave guide type electro-optical modulator - Google Patents
Clad modulation wave guide type electro-optical modulator Download PDFInfo
- Publication number
- CN1450383A CN1450383A CN03119023A CN03119023A CN1450383A CN 1450383 A CN1450383 A CN 1450383A CN 03119023 A CN03119023 A CN 03119023A CN 03119023 A CN03119023 A CN 03119023A CN 1450383 A CN1450383 A CN 1450383A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- electro
- modulation
- cladding
- core layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
包层调制波导型电光调制器,属光通信器件技术领域。解决波导传播损耗和芯层出现的较大双折射问题。本发明由芯层和包层构成,包层采用非线性电光材料、芯层采用无电光活性材料,通过只对波导的包层采用电光材料,使得波导的有效折射率随调制电压变化,从而达到调制的目的。采用本发明,可以降低调制器的传输损耗,增加行波电极与波导之间的耦合长度,从而提高调制频率。
A cladding modulation waveguide electro-optical modulator belongs to the technical field of optical communication devices. Address waveguide propagation loss and large birefringence in the core. The invention consists of a core layer and a cladding layer. The cladding layer adopts nonlinear electro-optic materials, and the core layer adopts electro-optical active materials. By only using electro-optic materials for the cladding layer of the waveguide, the effective refractive index of the waveguide changes with the modulation voltage, thereby achieving purpose of modulation. By adopting the invention, the transmission loss of the modulator can be reduced, and the coupling length between the traveling wave electrode and the waveguide can be increased, thereby increasing the modulation frequency.
Description
技术领域technical field
本发明属于光通信器件技术领域,特别涉及波导型电光调制器等光电器件。The invention belongs to the technical field of optical communication devices, in particular to optoelectronic devices such as waveguide electro-optical modulators.
背景技术Background technique
波导型电光调制器主要是利用电光材料,如LiNbO3铁电晶体、半导体材料、极化聚合物,在电场的作用下产生电光效应来实现的。当调制电场作用时,由于电光效应,芯层的折射率或波导等效折射率随着调制场变化,从而引起光传播相位也随调制场变化,实现光的调制。Waveguide electro-optic modulators are mainly realized by using electro-optic materials, such as LiNbO 3 ferroelectric crystals, semiconductor materials, and polarized polymers, to generate electro-optic effects under the action of an electric field. When the modulation electric field acts, due to the electro-optic effect, the refractive index of the core layer or the equivalent refractive index of the waveguide changes with the modulation field, which causes the light propagation phase to also change with the modulation field, realizing light modulation.
目前,在波导电光调制器设计中,均采用了波导芯层调制方式,即芯层都是由电光材料构成,相关专利参考US2003/0002766Al(PUB No.)。对于近些年日益兴起的聚合物波导电光调制器而言,为了加大非线性系数或电光系数,通常采用高发色团含量的聚合物作为芯层材料,这使得聚合物调制器的光损耗相对较高,严重阻碍了聚合物波导调制器的实用化进程。授权专利号为20030002766Al的美国专利在波导的包层和芯层都是LiNbO3电光材料,其实质还是属于传统的芯层调制方式。芯层调制的波导型电光调制器大多采用Mach-Zehnder干涉仪(MZI)的形式。MZI型电光调制器有许多实现方式,图1为其中一种推挽式的原理图。其中(a)是波导截面图,(b)是俯视图。1为Si或SiO2衬底,2为波导下包层,3为波导的芯层,是由电光材料制成,其电光系数通常比较大,4为波导上包层,5为缓冲层,6、7和8为金属电极,对于高速调制,一般采用行波电极。在图(b)中,光波从输入波导9进入,经第一个Y分支11,后光波能量被分成两部分,分别沿干涉臂13、14传输,并在两干涉臂中分别获得调制,其各自的附加相位迟滞ΔΦ=(π/λ)Γneff 3γ33VL(Γ为缩减因子,neff为波导传输模的有效折射率,γ33为电光系数,V是调制电压,L为电极长度)相差一个正负号(即推挽式(Push-Pull),两束光经第二个Y分支12合波产生干涉效应,最后在输出波导10输出调制光。At present, waveguide core layer modulation is adopted in the design of waveguide optical modulators, that is, the core layer is made of electro-optical materials. For related patents, refer to US2003/0002766Al (PUB No.). For the polymer waveguide optical modulators that have been rising in recent years, in order to increase the nonlinear coefficient or electro-optic coefficient, polymers with high chromophore content are usually used as the core material, which makes the optical loss of the polymer modulator relatively High, which seriously hinders the practical progress of polymer waveguide modulators. In the US patent with the authorized patent number 20030002766Al, the cladding layer and the core layer of the waveguide are both LiNbO 3 electro-optical materials, and its essence still belongs to the traditional core layer modulation method. Most waveguide electro-optic modulators modulated by the core layer are in the form of Mach-Zehnder interferometer (MZI). There are many ways to implement the MZI electro-optic modulator, and Figure 1 is a schematic diagram of one of the push-pull types. Where (a) is a cross-sectional view of the waveguide, and (b) is a top view. 1 is Si or SiO 2 substrate, 2 is the lower cladding layer of the waveguide, 3 is the core layer of the waveguide, which is made of electro-optic material, and its electro-optic coefficient is usually relatively large, 4 is the upper cladding layer of the waveguide, 5 is the buffer layer, 6 , 7 and 8 are metal electrodes. For high-speed modulation, traveling wave electrodes are generally used. In figure (b), the light wave enters from the input waveguide 9, passes through the
关于芯层调制波导型电光调制器,一般文献中报道的器件损耗大多高达十几甚至二十几个dB。而通常认为满足实用化要求插入损耗应在几个dB的程度,其中波导的传播损耗要在1dB/cm以下。由于相对较大的损耗,势必限制调制区的长度,即使得光波和微波之间互作用的距离受限,这对进一步提高调制频率是不利的。此外,由于波导芯区是电光系数大的材料,在调制电场的作用下产生电光效应导致芯区出现较大的双折射,这在波导的弯曲部位以及在与光纤的耦合时会引入可观的偏振相关的损耗。As for the core layer modulated waveguide electro-optic modulator, the device loss reported in the general literature is mostly as high as ten or even twenty dB. It is generally believed that the insertion loss should be at the level of several dB to meet the practical requirements, and the propagation loss of the waveguide should be below 1dB/cm. Due to the relatively large loss, the length of the modulation region is bound to be limited, that is, the interaction distance between the light wave and the microwave is limited, which is unfavorable for further increasing the modulation frequency. In addition, since the core of the waveguide is a material with a large electro-optic coefficient, the electro-optic effect generated under the action of the modulated electric field leads to a large birefringence in the core, which will introduce considerable polarization in the bending part of the waveguide and when coupling with the optical fiber. related losses.
发明内容Contents of the invention
本发明提出一种包层调制波导型电光调制器,目的是解决波导传播损耗和芯层出现的较大双折射问题。The invention proposes a cladding modulation waveguide type electro-optic modulator, aiming to solve the problems of waveguide propagation loss and large birefringence in the core layer.
本发明的一种包层调制波导型电光调制器,由芯层和包层构成,其特征在于所述包层采用非线性电光材料,芯层采用无电光活性材料。A cladding modulation waveguide electro-optic modulator of the present invention is composed of a core layer and a cladding layer, and is characterized in that the cladding layer is made of a nonlinear electro-optic material, and the core layer is made of an electroless photoactive material.
所述的包层调制波导型电光调制器,其进一步的特征在于包层采用含发色团的聚合物材料、芯层采用不含发色团的聚合物或者无机材料。The cladding modulation waveguide electro-optic modulator is further characterized in that the cladding layer is made of polymer material containing chromophore, and the core layer is made of polymer or inorganic material without chromophore.
本发明所涉及的包层调制波导型电光调制器,其波导结构的包层(即图1中的2和4)采用非线性的电光材料;而芯层则使用无电光活性的材料。当外加的调制场作用于包层时,引起电光材料折射率的改变,实现光的调制。与传统的芯层调制方式相比,该方法在具体实现上并无任何苛刻的要求,因此也易于实现。In the cladding modulation waveguide electro-optic modulator involved in the present invention, the cladding (
本发明的包层调制波导型电光调制器具有低光传输损耗、芯层的双折射现象较弱、芯层材料的选择自由度增大等优点。此外,伴随着损耗的降低,调制器的调制区长度或者光波与微波信号之间的互作用距离也可以更大,可减小半波电压以及进一步提高调制频率。因此本发明能够改善波导电光调制器的性能。The cladding modulation waveguide type electro-optic modulator of the present invention has the advantages of low optical transmission loss, weak birefringence phenomenon of the core layer, increased freedom of selection of core layer materials, and the like. In addition, with the reduction of loss, the length of the modulator's modulation region or the interaction distance between the light wave and the microwave signal can also be larger, which can reduce the half-wave voltage and further increase the modulation frequency. Therefore, the present invention can improve the performance of waveguide optical modulators.
附图说明Description of drawings
图1推挽式MZI型芯层调制的波导型电光调制器原理图,图中(a)为波导截面图、(b)为俯视图。Fig. 1 Schematic diagram of the waveguide electro-optic modulator modulated by the push-pull MZI core layer, in which (a) is a cross-sectional view of the waveguide, and (b) is a top view.
图2MZI型包层调制聚合物波导电光调制器的原理图,图中(a)为波导截面图、(b)为俯视图。Fig. 2 Schematic diagram of the MZI cladding-modulated polymer waveguide electro-optic modulator, in which (a) is a cross-sectional view of the waveguide, and (b) is a top view.
图3推挽式MZI型包层调制波导电光调制器的工作原理图,其芯层为无机材料,图中(a)为波导截面图、(b)为俯视图。Figure 3. The working principle diagram of the push-pull MZI-type cladding-modulated waveguide optical modulator. The core layer is made of inorganic materials. In the figure (a) is the cross-sectional view of the waveguide, and (b) is the top view.
具体实施方式Detailed ways
图2给出了本发明的实施例一,图3给出了本发明的实施例二。FIG. 2 shows
图2的实施例为Mach-Zehnder干涉仪型的包层调制聚合物波导电光调制器,其包层材料为掺发色团的PMMA聚合物,具有电光活性,芯层为聚酰亚胺。其中(a)是波导截面图,(b)是俯视图。制作时,先在洁净的Si或SiO2衬底1上蒸镀Cr/Au电极7,称为衬底电极或下电极;然后旋涂下包层2并固化、电晕极化;在下包层2上旋涂波导芯层3并固化,刻蚀波导芯层图案;旋涂上包层4同时固化、电晕极化;蒸镀Cr/Au顶层电极6并刻蚀电极图案;最后进行切割和端面抛光。The embodiment shown in FIG. 2 is a Mach-Zehnder interferometer-type cladding modulation polymer waveguide waveguide modulator. The cladding material is PMMA polymer doped with chromophore, which has electro-optic activity, and the core layer is polyimide. Where (a) is a cross-sectional view of the waveguide, and (b) is a top view. When making, first vapor-deposit Cr/
其工作原理为:光波从输入波导9进入,经第一个Y分支11后光波能量被分成两部分,分别沿干涉臂13、14传输,其中光波在干涉臂14中获得调制,附加了一个相位迟滞ΔΦ,两束光经第二个Y分支12合波产生干涉效应,最后在输出波导10输出调制光。在干涉臂14区域,调制信号(微波)经行波电极15的输入端口16耦合,然后从输出端口17输出,在这里只要对行波电极进行优化设计就可以实现最佳的速度匹配从而获得大的调制带宽。Its working principle is: the light wave enters from the input waveguide 9, and after passing through the
图3给出了推挽式Mach-Zehnder干涉仪型包层调制波导电光调制器的结构和工作原理,其中(a)是波导截面图,(b)是俯视图。波导下包层2和波导上包层4的材料为非线性的ADK77聚合物,芯层3是无机材料SiON。缓冲层5,金属电极6、7、8均与图1标示一样,输入波导9、第一个Y分支11、干涉臂13、14、第二个Y分支12、输出波导10的标示也与图1一致,其工作原理基本上与实施例一相同,差别仅在于光波在两个干涉臂13、14同时获得调制。Figure 3 shows the structure and working principle of the push-pull Mach-Zehnder interferometer-type cladding-modulated waveguide optical modulator, where (a) is a cross-sectional view of the waveguide, and (b) is a top view. The material of the waveguide
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031190235A CN1203361C (en) | 2003-04-30 | 2003-04-30 | Clad modulation wave guide type electro-optical modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031190235A CN1203361C (en) | 2003-04-30 | 2003-04-30 | Clad modulation wave guide type electro-optical modulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1450383A true CN1450383A (en) | 2003-10-22 |
| CN1203361C CN1203361C (en) | 2005-05-25 |
Family
ID=28684381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031190235A Expired - Fee Related CN1203361C (en) | 2003-04-30 | 2003-04-30 | Clad modulation wave guide type electro-optical modulator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1203361C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102483529A (en) * | 2009-08-26 | 2012-05-30 | 株式会社理光 | Electro-optical element |
| CN105829957A (en) * | 2013-12-11 | 2016-08-03 | 住友大阪水泥股份有限公司 | Electro-optical element |
| CN105842783A (en) * | 2015-01-12 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | Optical waveguide, manufacturing method therefor, and electronic device |
| CN107870454A (en) * | 2017-12-20 | 2018-04-03 | 武汉邮电科学研究院 | The preparation method and preparation system of a kind of electrooptic modulator |
| CN108008172A (en) * | 2017-11-17 | 2018-05-08 | 东北电力大学 | One kind is based on polymer optical wave guide current transformer chip |
| CN114942534A (en) * | 2022-04-27 | 2022-08-26 | 浙江大学 | Ion exchange modulatable optical splitter based on SiON waveguide and preparation process thereof |
| CN115755444A (en) * | 2022-11-21 | 2023-03-07 | 电子科技大学 | Efficient electro-optic devices based on electro-optic polymers and thin-film lithium niobate waveguides |
-
2003
- 2003-04-30 CN CNB031190235A patent/CN1203361C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102483529A (en) * | 2009-08-26 | 2012-05-30 | 株式会社理光 | Electro-optical element |
| CN102483529B (en) * | 2009-08-26 | 2015-03-04 | 株式会社理光 | Electro-optical element |
| CN105829957A (en) * | 2013-12-11 | 2016-08-03 | 住友大阪水泥股份有限公司 | Electro-optical element |
| CN105842783A (en) * | 2015-01-12 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | Optical waveguide, manufacturing method therefor, and electronic device |
| CN108008172A (en) * | 2017-11-17 | 2018-05-08 | 东北电力大学 | One kind is based on polymer optical wave guide current transformer chip |
| CN107870454A (en) * | 2017-12-20 | 2018-04-03 | 武汉邮电科学研究院 | The preparation method and preparation system of a kind of electrooptic modulator |
| CN107870454B (en) * | 2017-12-20 | 2019-09-17 | 武汉邮电科学研究院 | A kind of preparation method and preparation system of electrooptic modulator |
| CN114942534A (en) * | 2022-04-27 | 2022-08-26 | 浙江大学 | Ion exchange modulatable optical splitter based on SiON waveguide and preparation process thereof |
| CN115755444A (en) * | 2022-11-21 | 2023-03-07 | 电子科技大学 | Efficient electro-optic devices based on electro-optic polymers and thin-film lithium niobate waveguides |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1203361C (en) | 2005-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN219266720U (en) | Thin film lithium niobate modulator | |
| CN1184506C (en) | Lithium niobate modulator and its making process | |
| JP5063001B2 (en) | Traveling waveform light modulator | |
| US20030169478A1 (en) | Optical modulator and design method therefor | |
| CN101512416A (en) | light control element | |
| CN111487793B (en) | Z-cut LNOI electro-optic modulator for improved modulation efficiency and its application | |
| CN110308573A (en) | A Mach-Zehnder Electro-Optic Modulator Based on Silicon/PLZT Hybrid Waveguide | |
| CN114153085B (en) | A thin-film lithium niobate adjustable high linearity electro-optic modulator integrated chip | |
| CN219245883U (en) | A Thin Film Lithium Niobate Modulator | |
| CN117631146A (en) | Polarization converter based on film lithium niobate waveguide supermode evolution | |
| JP3088988B2 (en) | Traveling wave optical modulator and optical modulation method | |
| CN1203361C (en) | Clad modulation wave guide type electro-optical modulator | |
| US7167607B2 (en) | Symmetric optical modulator with low driving voltage | |
| JP2006065044A (en) | Optical modulator | |
| CN209117999U (en) | A Wide Bandwidth Electro-Optic Modulator | |
| JP2847660B2 (en) | Waveguide type optical modulator | |
| CN115373159A (en) | Silicon-lithium niobate hybrid integrated polarization beam splitter rotator | |
| CN119045225A (en) | Film lithium niobate acousto-optic modulator | |
| CN117991525A (en) | A folded dual-drive differential thin-film lithium niobate electro-optic modulator chip | |
| JP2020166053A (en) | Light modulator | |
| JP2805027B2 (en) | Waveguide type optical modulator | |
| CN116990906A (en) | A kind of lithium silicon niobate hybrid integrated electro-optical modulator based on MZ structure and its preparation method | |
| JP2564999B2 (en) | Light modulator | |
| US7289686B2 (en) | Optical modulator | |
| CN118068598B (en) | Film lithium niobate electro-optical modulator based on slow wave electrode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |