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CN1333523C - Time-frequency component manufacturing method and its products - Google Patents

Time-frequency component manufacturing method and its products Download PDF

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Publication number
CN1333523C
CN1333523C CNB021488878A CN02148887A CN1333523C CN 1333523 C CN1333523 C CN 1333523C CN B021488878 A CNB021488878 A CN B021488878A CN 02148887 A CN02148887 A CN 02148887A CN 1333523 C CN1333523 C CN 1333523C
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chip
frequency
substrate
oscillator
bottom wall
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CNB021488878A
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CN1503449A (en
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颜文成
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Taitien Electronics Co Ltd
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Taitien Electronics Co Ltd
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Abstract

The invention provides a manufacturing method of a time-frequency element, which comprises the steps of firstly electrically connecting a contact on a chip with a pin on a substrate by a flip chip packaging method in the substrate, then adhering one end of an oscillator on the side wall of the substrate by conductive adhesive in a vacuum environment, adjusting the oscillation frequency of the oscillator by a quality fine adjustment step, and finally sealing the substrate to finish packaging. In addition, the invention also provides a time-frequency element product, which comprises a substrate with an opening, a sealing cover for sealing the opening, a chip and an oscillator arranged in the substrate, and a frequency fine-tuning particle layer formed on the surface of the oscillator.

Description

The manufacture method of time-frequency elements and goods thereof
Technical field
The present invention relates to a kind of time-frequency elements, particularly relate to the time-frequency elements of the little and tool precise frequency of a kind of volume.
Background technology
Time-frequency elements, just so-called crystal oscillator (crystal oscillator), usually being widely used as in many electronic installations and communication device provides reference frequency (reference frequency) and the element of reference time (reference time), in recent years, more since portable apparatus (as mobile phone, PDA) rise, make the volume of time-frequency elements more become meticulous because of cooperating portable apparatus, on the other hand, except the little requirement of volume, more can not ignore on the frequency of time-frequency elements and the accuracy of time, therefore, need to take into account the processing procedure of said two devices, can obtain the good time-frequency elements of quality.
As shown in Figure 1, it is the circuit diagram of a time-frequency element 7, a common time-frequency elements 7 has comprised a chip 71, reach vibration 72, because vibration 72 is made with piezoelectricity (quartz) material, can't be integrated in the chip 71, therefore occur in external mode usually, then comprise the oscillating circuit of forming such as electronic components such as inverter, resistance 73 in the chip 71.
General time-frequency elements; as shown in Figure 2; be in substrate 82 with an opening 81; vibration son 83 and chip 84 that placement arranged side by side has encapsulated; be formed with circuit layout (not shown) on the substrate 82 with plural pin; and the method for utilizing line to engage (wire-bonding) makes the vibration son 83 and the chip 84 that have encapsulated electrically connect with these pins; then in substrate 82, insert colloid 85; by vibration son 83 and the chip 84 extended plain conductors of colloid 85 protection after this encapsulation, make a time-frequency element 8 after utilizing a loam cake 86 with these substrate 82 cappings at last.But, above said manufacture method, several shortcomings below but existing:
1. will vibrate respectively son and chip of the method for utilizing line to engage is electrically connected on the circuit layout of substrate, need insert a large amount of colloids and can prevent moisture by outside invasion, to avoid the plain conductor oxidation.
2. the son that will vibrate is inserted in the substrate after the encapsulation earlier again, and manufacturing cost is higher, and vibration after encapsulation can't adjust its quality and frequency, makes that the accuracy of time-frequency elements is lower.
3. because vibration is to place side by side with chip level, make that the volume of time-frequency elements integral body is bigger, can't reach the minimized requirement of volume.
Summary of the invention
Therefore, purpose of the present invention is providing a kind of time-frequency elements manufacture method of fine-tuning calibration frequency of oscillation.
Another object of the present invention is providing a kind of frequency of oscillation accurate time-frequency elements.
A further object of the present invention is providing a kind of volume little and only need insert the time-frequency elements of part colloid.
So, the present invention makes the method for time-frequency elements, wherein this time-frequency elements has a substrate, this substrate comprises a diapire that is formed with a circuit layout, and around this a diapire periphery and a upwardly extending sidewall, and this diapire matches with this sidewall and defines the accommodation space with an opening, this circuit layout is formed with plural pin at this diapire in the face of on the end face of this accommodation space, this method comprises step: (a) chip with plural contact is inserted this accommodation space by this opening, and with this chip respectively should the plural number contact and respectively this corresponding pin of this substrate diapire electrically connect; (b) under a vacuum environment, an end of a vibration son is arranged on the sidewall of this substrate to and electric connection corresponding with this chip; And (c) under this vacuum environment, seal the above-mentioned opening of this substrate that sub and this chip of this vibration is set with a capping, keep this accommodation space in a vacuum tight state whereby.
A kind of time-frequency elements of the present invention, include: a substrate, have a diapire and a upwardly extending sidewall of a periphery from this diapire, this diapire matches with this sidewall and defines the accommodation space with an opening, and this diapire is formed with a circuit layout, and this circuit layout is formed with plural pin at this diapire in the face of on the end face of this accommodation space; One capping is connected on this sidewall away from an end of this diapire and seals the opening of this accommodation space, is the airtight conditions of an about vacuum or vacuum in this accommodation space; One chip is arranged in this accommodation space, and this chip has an oscillating circuit, and plural number and the corresponding contact of these pins; One vibration son is arranged in this accommodation space up and down accordingly with this chip, and this vibration is that oscillating circuit with this chip electrically connects mutually; And a frequency trim particle layer, being formed on the surface of this vibration, this frequency trim particle layer comprises the particle of plural each interval, to increase the quality of this vibration, reduces the frequency of oscillation of this vibration whereby.
Description of drawings
Fig. 1 is the circuit diagram of an existing time-frequency elements;
Fig. 2 is a stereogram, and the structure of this existing time-frequency elements is described;
Fig. 3 is a flow chart, and the manufacture method of time-frequency elements of the present invention is described;
Fig. 4 is a profile, illustrates a chip is inserted situation in the substrate;
Fig. 5 is a part of enlarged drawing, illustrates that the contact of chip and the pin on the substrate are by the interconnective situation of a projection;
Fig. 6 is a profile, illustrates after this substrate is placed into this chip, connects the situation of vibration on a sidewall of this substrate;
Fig. 7 is a profile, and the situation of the plural particle of deposition on this vibration is described;
Fig. 8 is a profile, illustrates with a capping to seal the situation of making a time-frequency element behind this substrate.
Embodiment
Consult Fig. 3, the manufacturing process of time-frequency elements 1 preferred embodiment of the present invention comprises the following step:
Cooperate Fig. 4 and Fig. 5, wherein Fig. 5 is the part enlarged drawing of a-quadrant among Fig. 4, this time-frequency elements 1 has a substrate 11, this substrate 11 comprises a diapire 12 that is formed with a circuit layout 15 (not shown), and around these diapire 12 peripheries and a upwardly extending sidewall 13, and this diapire 12 matches with this sidewall 13 and defines the accommodation space 16 with an opening 14, and this circuit layout 15 is formed with plural pin 17 at this diapire 12 in the face of on the end face of this accommodation space 16.Step 31, be that the chip 2 that an inside has an oscillating circuit (not shown) is inserted this accommodation space 16 by this opening 14, and be formed with the contact 21 that plural number is connected with this oscillating circuit on the surface of this chip 2, and with this respectively this contact 21 electrically connect with respectively this corresponding pin 17 on this diapire 12, and in order to illustrate further, step 31 more comprises step following time:
(a1) contact 21 and these pins 17 electric connections of crystal method with these chips 2 covered in utilization.
(a2) insert colloid 3 at this chip 2 and 11 of this substrates.
Do not engage the method for (wire-bonding) herein with line, cover crystalline substance (flip-chip) method with pin 17 electric connections of the contact on the chip 2 21 and change to adopt with substrate 11, just on respectively this contact 21 on the chip 2, form a scolding tin (solder) or gold (Au) projection (bump) 22, and this projection 22 is connected on the contact 21 and corresponding pin 17 thereof of chip 2 with heat treatment mode again, and cover the electric signal transmission range that crystal method can reduce by 11 of chip 2 and substrates by this, increase the signal transmission speed, and can dwindle the size after chip 2 encapsulation, make that chip 2 encapsulation front and back sizes are very nearly the same, can reach the minimized requirement of volume.On the other hand, cover crystal method owing to adopt, thus only need insert colloid 3 at the contact 21 and 17 of the pins of chip 2, and need in accommodation space 16, not fill full colloid 3, just can strengthen integrally-built reliability, so can save manufacturing cost.In the present embodiment, this colloid 3 is one or its composition of aqueous epoxy base plate resin (epoxy) and the phenol (phenol) or the acid anhydride materials such as (anhydride) of low-viscosity, and the spherical silicon dioxide particle that has more plural small particle diameter in this colloid 3 is used as inserts.
Cooperate Fig. 6, step 32 is under a vacuum environment, to vibrate an end of a vibration son 4 by a conducting resinl (conductive adhesive) 5 and sub 4 to be connected on the sidewall 13 of this substrate 11, and make this vibration 4 to electrically connect with the oscillating circuit of these chip 2 inside, the end that this vibration 4 does not connect then can make this vibration 4 vibration up and down, and this vibration 4 is and the corresponding and vertical placement about in the of 2 of this chip, so compared to existing time-frequency elements, the design that nature can holding circuit and dwindle volume after being encapsulated; And owing to be to operate under vacuum environment, therefore vibration son 4 and chip 2 do not need encapsulation in advance, only need to place in this substrate 11 with the pattern of naked crystalline substance (bare chip), can avoid airborne humidity effect circuit, and save manufacturing cost.
Step 33 is imported a test signal to this chip 2, makes it drive this vibration 4 vibrations.
Cooperate Fig. 7, step 34 is to measure the frequency of oscillation of this vibration 4, and with a predetermined oscillation frequency mutually relatively after, deposit the exposed surface of plural particle 6 according to measurement result again to vibration 4, in the present embodiment, for purposes of illustration, be to be example with the physical vapor deposition (PVD) method, increase the quality of chip 22, whereby, because the plural particle 6 of deposition makes the quality of sub 4 surfaces of vibration slightly increase, frequency when fine setting reduces by 4 vibrations of vibration, certainly, the physical vaporous deposition that herein exemplifies can be evaporation, also can be sputter.And the material that this physical vaporous deposition adopted can be following material commonly used, comprising: gold, silver, chromium, aluminium, and the alloy of other equivalent substance or above-mentioned metal or with the compound of other material.And when frequency of oscillation meets expection, stop the step of deposition, obtain frequency of oscillation the most accurately thus.Certainly,, can't connect to the circuit of conducting to each other, so existing circuit does not have the doubt of short circuit on the vibration son 4 because the number of particles that increases is few.
On the other hand, if improve the frequency of oscillation of vibration 4, also can the synchronous measure frequency of oscillation in step 34 and adopt a dry-etching method (not shown), the existing particle of this exposed surface on etching off vibration 4 slightly, reduce the quality of vibration 4, and the frequency of oscillation of increase vibration 4, and when frequency of oscillation arrives this predetermined oscillation frequency, stop etching, because the particle that this kind etching method is removed is few, can the original interelement binding circuit of disjunction and destroy original circuit yet.And, make the frequency accuracy of this vibration 4 improve, and promote the yield of this time-frequency element 1 by the step that above-mentioned quality is finely tuned.
Cooperate Fig. 8, step 35 is under a vacuum environment, utilize a capping 18 these openings 14 of sealing, and be provided with the chip 2 behind crystal covered package in this substrate 11, and the sidewall 13 of substrate 11 is provided with vibration 4 after the quality fine setting, and this accommodation space 16 remained in a vacuum tight state, promptly make time-frequency elements 1.
Comprehensively above-mentioned, the manufacture method of time-frequency elements of the present invention is to utilize the crystal covered package method, and will vibrate son and chip be arranged in parallel up and down and dwindle the volume of time-frequency elements, owing to be in a vacuum environment, to operate, so can reduce the chance of the oxidized destruction of circuit, and before capping, more utilize a quality trim step accurately to control the frequency of oscillation of vibration son, make the present invention reach really that volume is little, yield is high, and the purpose of the accurate frequency of oscillation of tool.

Claims (6)

1、一种制造时频元件的方法,其中该时频元件具有一基板,该基板包括形成有一电路布局的一底壁,以及环绕该底壁周缘并向上延伸的一侧壁,且该底壁与该侧壁相配合界定出具有一开口的一容置空间,该电路布局在该底壁面对该容置空间的一顶面上形成有复数接脚,其特征在于该方法包含步骤:1. A method of manufacturing a time-frequency element, wherein the time-frequency element has a substrate, the substrate includes a bottom wall forming a circuit layout, and a side wall surrounding the periphery of the bottom wall and extending upward, and the bottom wall Cooperating with the side wall to define an accommodating space with an opening, the circuit layout forms a plurality of pins on a top surface of the bottom wall facing the accommodating space, characterized in that the method includes the steps of: (a)将一具有复数接点的芯片由该开口置入该容置空间,且利用覆晶方法将该芯片的各该复数接点与该基板底壁的各该对应接脚电性连接;(a) placing a chip with a plurality of contacts into the accommodating space through the opening, and electrically connecting each of the plurality of contacts of the chip with each of the corresponding pins on the bottom wall of the substrate by flip chip method; (b)在一真空环境下,将一振荡子的一端与该芯片相对应且电性连接地设置在该基板的侧壁上;(b) under a vacuum environment, one end of an oscillator corresponding to the chip and electrically connected is arranged on the side wall of the substrate; (c)输入一测试信号至该芯片,使其驱动该振荡子振荡;(c) inputting a test signal to the chip to drive the vibrator to oscillate; (d)测量该振荡子的振荡频率,并与一预定振荡频率比较,依测量结果沉积至/蚀刻自该振荡子曝露于该开口的一曝露表面,以微调该振荡子的质量;(d) measuring the oscillation frequency of the oscillator, and comparing it with a predetermined oscillation frequency, depositing/etching from an exposed surface of the oscillator exposed to the opening according to the measurement result, so as to fine-tune the quality of the oscillator; (e)在该真空环境下,以一封盖封闭已设置该振荡子及该芯片的该基板的上述开口,借此保持该容置空间于一真空气密状态。(e) under the vacuum environment, sealing the above-mentioned opening of the substrate on which the vibrator and the chip are disposed with a cover, thereby keeping the accommodating space in a vacuum-tight state. 2、根据权利要求1所述的制造时频元件的方法,其特征在于:该步骤(e)是利用物理气相沉积(PVD)法,沉积复数粒子至该振荡子的该曝露表面以增加该振荡子的质量,借此来降低该振荡子的振荡频率。2. The method for manufacturing a time-frequency element according to claim 1, characterized in that: the step (e) is to deposit a plurality of particles on the exposed surface of the vibrator by using physical vapor deposition (PVD) to increase the oscillation The quality of the oscillator, thereby reducing the oscillation frequency of the oscillator. 3、根据权利要求1所述的制造时频元件的方法,其特征在于:其中该步骤(e)是利用干式蚀刻法,蚀去该曝露表面的复数粒子,减少该振荡子的质量,借此来提高该振荡子的振荡频率。3. The method for manufacturing time-frequency components according to claim 1, wherein the step (e) is to use dry etching to etch away the plurality of particles on the exposed surface to reduce the quality of the oscillator, by This increases the oscillation frequency of the oscillator. 4、根据权利要求1所述的制造时频元件的方法,其特征在于:该步骤(a)更包含下列次步骤:4. The method for manufacturing time-frequency components according to claim 1, characterized in that: the step (a) further comprises the following steps: (a1)在该芯片与该基板间填入一胶体。(a1) Filling a colloid between the chip and the substrate. 5、一种时频元件,其特征在于包含有:5. A time-frequency element, characterized in that it comprises: 一基板,具有一底壁及一自该底壁的一周缘向上延伸的侧壁,该底壁与该侧壁相配合界定出具有一开口的一容置空间,且该底壁形成有一电路布局,该电路布局在该底壁面对该容置空间的一顶面上形成有复数接脚;A substrate having a bottom wall and a side wall extending upward from a peripheral edge of the bottom wall, the bottom wall cooperates with the side wall to define an accommodating space with an opening, and the bottom wall forms a circuit layout , the circuit layout has a plurality of pins formed on a top surface of the bottom wall facing the accommodating space; 一封盖,连接于该侧壁上远离该底壁的一端且封闭该容置空间的开口,该容置空间内是一大约真空或真空的气密状态;a cover, connected to an end of the side wall away from the bottom wall and closing the opening of the accommodating space, the accommodating space is in an airtight state of approximately vacuum or vacuum; 一芯片,设置在该容置空间内,该芯片具有一振荡电路,以及复数与该等接脚相对应的接点,且利用覆晶方法将该芯片的各该复数接点与该基板底壁的各该对应接脚电性连接;A chip is arranged in the accommodating space, the chip has an oscillating circuit, and a plurality of contacts corresponding to the pins, and each of the plurality of contacts of the chip is connected to each of the bottom wall of the substrate by a flip-chip method The corresponding pin is electrically connected; 一振荡子,与该芯片上下相对应地设置在该容置空间内,且该振荡子是与该芯片的振荡电路互相电性连接;及an oscillator, arranged in the accommodating space corresponding to the top and bottom of the chip, and the oscillator is electrically connected to the oscillation circuit of the chip; and 一频率微调粒子层,形成在该振荡子的表面上,该频率微调粒子层包含复数彼此间隔的粒子,以增加该振荡子的质量,借此降低该振荡子的振荡频率。A frequency fine-tuning particle layer is formed on the surface of the vibrator. The frequency fine-tuning particle layer includes a plurality of particles spaced apart from each other to increase the quality of the vibrator, thereby reducing the vibration frequency of the vibrator. 6、根据权利要求5所述的时频元件,其特征在于:该频率微调粒子层材料,是选自下列金属其中之一:金、银、铬及铝或上述两个以上金属的组合物。6. The time-frequency element according to claim 5, wherein the frequency fine-tuning particle layer material is one of the following metals: gold, silver, chromium and aluminum or a combination of two or more of the above metals.
CNB021488878A 2002-11-22 2002-11-22 Time-frequency component manufacturing method and its products Expired - Fee Related CN1333523C (en)

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CN1333523C true CN1333523C (en) 2007-08-22

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5607236A (en) * 1987-02-27 1997-03-04 Seiko Epson Corporation Quartz oscillator temperature sensor
US5841217A (en) * 1996-03-14 1998-11-24 Citizen Watch Co., Ltd. Surface mounting crystal unit
JPH11112268A (en) * 1997-10-08 1999-04-23 Seiko Epson Corp Piezoelectric device and manufacturing method thereof
CN1261994A (en) * 1997-07-09 2000-08-02 “黑晶”公开股份公司 Thermostatically controlled quartz generator
JP2001085966A (en) * 1999-09-10 2001-03-30 Toyo Commun Equip Co Ltd Surface mount type piezoelectric device
JP2001102904A (en) * 2000-10-16 2001-04-13 Seiko Epson Corp Crystal oscillator
WO2002047263A1 (en) * 2000-12-07 2002-06-13 Flextronics Design Finland Oy A method for manufaacturing a crystal oscillator and a crystal oscillator

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5607236A (en) * 1987-02-27 1997-03-04 Seiko Epson Corporation Quartz oscillator temperature sensor
US5841217A (en) * 1996-03-14 1998-11-24 Citizen Watch Co., Ltd. Surface mounting crystal unit
CN1261994A (en) * 1997-07-09 2000-08-02 “黑晶”公开股份公司 Thermostatically controlled quartz generator
JPH11112268A (en) * 1997-10-08 1999-04-23 Seiko Epson Corp Piezoelectric device and manufacturing method thereof
JP2001085966A (en) * 1999-09-10 2001-03-30 Toyo Commun Equip Co Ltd Surface mount type piezoelectric device
JP2001102904A (en) * 2000-10-16 2001-04-13 Seiko Epson Corp Crystal oscillator
WO2002047263A1 (en) * 2000-12-07 2002-06-13 Flextronics Design Finland Oy A method for manufaacturing a crystal oscillator and a crystal oscillator

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