CN1333115C - Technical method for drawing silicon single-crystal - Google Patents
Technical method for drawing silicon single-crystal Download PDFInfo
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- CN1333115C CN1333115C CNB2004100182237A CN200410018223A CN1333115C CN 1333115 C CN1333115 C CN 1333115C CN B2004100182237 A CNB2004100182237 A CN B2004100182237A CN 200410018223 A CN200410018223 A CN 200410018223A CN 1333115 C CN1333115 C CN 1333115C
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- silicon single
- crystal
- stove
- single crystals
- resistivity
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- 239000013078 crystal Substances 0.000 title claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title abstract description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 239000010453 quartz Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052786 argon Inorganic materials 0.000 claims abstract description 7
- 239000002210 silicon-based material Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000003672 processing method Methods 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 230000004927 fusion Effects 0.000 claims description 3
- 230000006837 decompression Effects 0.000 claims description 2
- 230000002950 deficient Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 12
- 229920005591 polysilicon Polymers 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000005485 electric heating Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention discloses a technological method for pulling silicon single crystals. Procedures comprise: polysilicon materials are put in a quartz crucible for electric heating, argon is filled in a furnace, pressure reduction and temperature rise are carried out at the pressure of 2600 Pa in the furnace and the temperature of 1420 DEG C, silicon single crystals are pulled after the materials in the furnace are completely melted, and the resistivity is detected. The present invention is characterized in that polysilicon materials are required to be added in the furnace for a plurality of times after a first silicon single crystal is pulled, and material addition is carried out for one time after one silicon single crystal is pulled. The finished product rate of silicon single crystals can be greatly improved by applying the technological method of the present invention. If the range of the resistivity of silicon single crystals permitted by devices is 10 omega cm simple, the finished product rate of single crystals is about 34% when traditional technologies are adopted, and the finished product rate is improved to 58% after the technological method of the present invention is used for adding materials for three times. The small range of the resistivity of silicon single crystals permitted by semiconductor devices, the more obvious of the improvement of the finished product rate of single crystals after the technological method is used for adding materials for a plurality of times.
Description
One, technical field:
What the present invention relates to is semiconductor material manufacturing technology field, particularly discloses a kind of drawing silicon single-crystal processing method, promptly is the repeatedly charging technology during open czochralski silicon monocrystal draws, and is applicable to vertical pulling method production silicon single-crystal.
Two, background technology:
Vertical pulling method is produced silicon single-crystal, finishes in single crystal growing furnace.The function that single crystal growing furnace has possessed heating, vacuumized, inflates.A certain amount of high purity polycrystalline silicon of packing in single crystal growing furnace vacuumizes on the limit, under the reduced atmosphere of limit inflation, with the fusing of silicon material, and adopts certain drawing process, polysilicon is changed into the silicon single-crystal of required resistivity and crystallization direction.Usually, because impurity segregation can cause monocrystalline head and afterbody resistivity that very large deviation is arranged in the silicon, about three times of N type monocrystalline, the P type is then about two times, this and semiconducter device to the resistivity permissible variation ± 20% even ± 10% requirement differs greatly, cause the monocrystalline of considerable part, scrap, production cost is significantly increased owing to resistivity departs from requirement on devices.
Three, summary of the invention:
The objective of the invention is in order to solve in the monocrystalline because the contradiction between big longitudinally resistivity deviation of the monocrystalline that impurity segregation causes and the desired less resistive rate of the semiconducter device deviation.
The present invention is achieved in that a kind of drawing silicon single-crystal processing method, step comprises polycrystalline silicon material dropped into carries out electrically heated in the quartz crucible, argon filling and decompression heat up in stove, furnace pressure is at 2600Pa, temperature is treated to draw silicon single-crystal after the complete fusion of material in the stove, and is detected its resistivity at 1420 ℃, it is characterized in that: need in stove, repeatedly to add polycrystalline silicon material after drawing first silicon single-crystal, whenever draw one to add a defective material.The mechanism of implementing the inventive method and effect is: because segregation effect of insulated grid oxidation, impurity concentration in the melt silicon is in continuous rising, the resistivity of corresponding silicon single-crystal is descending, when the resistivity of monocrystalline will drop to contract requirement following in limited time, adopt repeatedly charging technology, add a certain amount of high-purity polycrystal raw material, make the impurity in the remaining fusion polysilicon diluted, guarantee that the monocrystalline resistivity of pulling out once more still can be in the scope that requires.
Repeatedly Jia Liao technology is: 1, prescribe a time limit (for example 35 Ω cm) when single crystal silicon resistivity has dropped under the semiconducter device requirement resistivity, with drawing the concubine that much better first monocrystalline moves to single crystal growing furnace, close the valve between main chamber and the concubine; 2, reduce heating power, the molten silicon surface temperature is reduced to about 1400 ℃, crystallization occurs; First monocrystalline that 3, will draw shifts out from concubine, and installs repeatedly feeding device; 4, argon filling when vacuum tightness reaches 5Pa in the concubine, feeding device is 130～150mm place above quartz crucible, opening unit then, the polycrystalline silicon material that needs are added is disposed in the quartz crucible.5, be warming up to 1420 ℃, just can begin to draw second monocrystalline behind the melted silicon material.
After processing method of the present invention is implemented, can improve the yield rate of silicon single-crystal greatly, if device allows the electrical resistivity range of silicon single-crystal to have only 10 Ω cm, when adopting prior art processes, monocrystalline yield rate about 34%; After adopting three charging technologies of the inventive method implementation, yield rate will bring up to 58%.When the electrical resistivity range of silicon single-crystal that semiconducter device allows more hour, it will be more obvious adopting repeatedly behind the charging technology raising of monocrystalline yield rate.
Another advantage of processing method of the present invention is to save cost.One kilogram of monocrystalline of same production adopts repeatedly charging technology method of the present invention, and the quartz crucible cost of consumption can reduce about 50% than former technology, and when the monocrystalline electrical resistivity range of semiconducter device requirement is narrow more, its decline scope also will increase.
Four, embodiment:
Below just produce the N type, mix phosphorus 35～45 Ω cm, 3 " silicon single-crystal is an example, and the present invention is further described.
1, throw polycrystal raw material 20kg (the about 3000 Ω cm of basic boron, the about 300 Ω cm of basic phosphorus), adopting the resistivity of mixing the phosphorus mother alloy is 9.9 * 10
-3Ω cm, doping 0.965 gram.
2, be warming up to more than 1420 ℃ at (the about 2600Pa of furnace pressure) under the reduced atmosphere of argon filling, with the fusing of silicon material, and pulling monocrystal, when electrical path length such as monocrystalline reach 650mm, monocrystalline is finished up.
First monocrystalline that 3, will draw moves to the concubine of single crystal growing furnace, closes the valve between main chamber and the concubine.Reduce heating power, the molten silicon face temperature in the quartz crucible is reduced to about 1400 ℃, crystallization occurs.
First monocrystalline that 4, will draw shifts out from concubine.
5, repeatedly adding sizeable polycrystal raw material 5kg in the feeding device.Repeatedly feeding device is in place.
6, concubine is found time and argon filling, open the valve between main chamber and the concubine then.
7, repeatedly feeding device drops to 130～150mm place, quartz crucible top, and opening unit is disposed to the 5kg polycrystal in the quartz crucible.
8, elevated temperature to 1420 ℃, treat that the silicon material melts fully after, begin to draw second monocrystalline.
Finish up when 9, second monocrystalline is pulled to 500mm, repeat above-mentioned the 3rd, the 4 two step then.
10, in feeding device repeatedly, add the 2kg polycrystalline after, repeat above-mentioned the 6th, the 7th, the 8 three step again.
Finish up when 11, the 3rd monocrystalline is pulled to the about 1000mm of length.
12, cut off heating power, blowing out.
Adopt above-mentioned three charging technologies, from three monocrystalline, can obtain the about 15.4kg of monocrystalline total amount of 35～45 Ω cm, compare with the total amount 26.5kg that feeds intake, yield rate is 58.1%.If when adopting traditional drawing process, the about 6.9kg of monocrystalline weight of 35～45 Ω cm, yield rate is about 34.5%.After adopting three charging technologies of the inventive method implementation, yield rate has improved 23.6%.
Claims (1)
1. one kind draws the silicon single-crystal processing method, step comprises: polycrystalline silicon material is dropped into carry out electrically heated in the quartz crucible, argon filling and decompression heat up in stove, furnace pressure is at 2600Pa, temperature is treated to draw silicon single-crystal after the complete fusion of material in the stove, and is detected its resistivity at 1420 ℃, it is characterized in that: need in stove, repeatedly to add polycrystalline silicon material after drawing first silicon single-crystal, whenever draw one to add a defective material; Described processing step repeatedly reinforced in stove is: after drawing first silicon single-crystal, reduce the heating power of stove earlier, the molten silicon surface temperature is reduced to about 1400 ℃, crystallization appears, first monocrystalline that has drawn shifted out from concubine, and install feeding device, argon filling when vacuum tightness reaches 5Pa in the concubine, feeding device feeds in raw material above quartz crucible, feeding quantity be first charging capacity 1/4, behind the heating and melting, draw second, repeat above-mentioned steps later on, but feeding quantity reduces one by one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100182237A CN1333115C (en) | 2004-05-11 | 2004-05-11 | Technical method for drawing silicon single-crystal |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100182237A CN1333115C (en) | 2004-05-11 | 2004-05-11 | Technical method for drawing silicon single-crystal |
Publications (2)
| Publication Number | Publication Date |
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| CN1696355A CN1696355A (en) | 2005-11-16 |
| CN1333115C true CN1333115C (en) | 2007-08-22 |
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| CNB2004100182237A Expired - Fee Related CN1333115C (en) | 2004-05-11 | 2004-05-11 | Technical method for drawing silicon single-crystal |
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101571502B (en) * | 2009-06-15 | 2012-06-13 | 重庆大全新能源有限公司 | Method for measuring content of boron and content of phosphorus in polysilicon |
| JP5194146B2 (en) * | 2010-12-28 | 2013-05-08 | ジルトロニック アクチエンゲゼルシャフト | Method for producing silicon single crystal, silicon single crystal, and wafer |
| CN102174706A (en) * | 2011-01-05 | 2011-09-07 | 刘文祥 | Semiconductor sequence body |
| CN102168302B (en) * | 2011-04-13 | 2012-11-07 | 天津市环欧半导体材料技术有限公司 | Double-quartz-crucible device and method for producing czochralski silicon single crystal |
| CN102409397A (en) * | 2011-12-06 | 2012-04-11 | 江西旭阳雷迪高科技股份有限公司 | Monocrystalline silicon rod drawing process |
| CN103074681B (en) * | 2013-02-17 | 2016-03-16 | 英利集团有限公司 | A kind of secondary charging method |
| CN103397389B (en) * | 2013-07-30 | 2016-08-10 | 英利能源（中国）有限公司 | The production method of monocrystal rod |
| JP6222013B2 (en) | 2014-08-29 | 2017-11-01 | 信越半導体株式会社 | Resistivity control method |
| CN104499048A (en) * | 2014-12-07 | 2015-04-08 | 海安县石油科研仪器有限公司 | Monocrystalline silicon growth process based on continuous feeding |
| CN104746134B (en) * | 2015-03-30 | 2017-08-22 | 江苏盎华光伏工程技术研究中心有限公司 | Using the n-type pulling single crystal silicon method of compensation silicon material |
| CN107541772A (en) * | 2017-07-17 | 2018-01-05 | 晶科能源有限公司 | A kind of preparation method for mixing algan single crystal rod |
| CN110396715A (en) * | 2019-09-04 | 2019-11-01 | 内蒙古中环光伏材料有限公司 | A kind of pulling of crystals repeatedly throws technique again |
| CN112981520A (en) * | 2021-01-08 | 2021-06-18 | 隆基绿能科技股份有限公司 | Crystal pulling process method for monocrystalline silicon |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06263586A (en) * | 1993-03-15 | 1994-09-20 | Komatsu Electron Metals Co Ltd | Apparatus for producing semiconductor single crystal |
| JPH0840794A (en) * | 1994-08-03 | 1996-02-13 | Hitachi Ltd | Recharge method in single crystal silicon manufacturing process |
| EP0712945A1 (en) * | 1994-11-21 | 1996-05-22 | Shin-Etsu Handotai Company Limited | Method and apparatus for recharging of silicon granules in Czochralski single crystal growing |
| US20030154907A1 (en) * | 2000-02-01 | 2003-08-21 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Apparatus for pulling single crystal by CZ method |
| JP2007260791A (en) * | 2006-03-27 | 2007-10-11 | Toshiba Mach Co Ltd | Transfer device and transferring method |
-
2004
- 2004-05-11 CN CNB2004100182237A patent/CN1333115C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06263586A (en) * | 1993-03-15 | 1994-09-20 | Komatsu Electron Metals Co Ltd | Apparatus for producing semiconductor single crystal |
| JPH0840794A (en) * | 1994-08-03 | 1996-02-13 | Hitachi Ltd | Recharge method in single crystal silicon manufacturing process |
| EP0712945A1 (en) * | 1994-11-21 | 1996-05-22 | Shin-Etsu Handotai Company Limited | Method and apparatus for recharging of silicon granules in Czochralski single crystal growing |
| US20030154907A1 (en) * | 2000-02-01 | 2003-08-21 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Apparatus for pulling single crystal by CZ method |
| JP2007260791A (en) * | 2006-03-27 | 2007-10-11 | Toshiba Mach Co Ltd | Transfer device and transferring method |
Non-Patent Citations (3)
| Title |
|---|
| Semiconductor Silicon Crystal Technology F.Shimura,178.179 1989 * |
| 能够多次投料的硅单晶炉 杨遇春，稀有金属，第1期 1979 * |
| 能够多次投料的硅单晶炉 杨遇春，稀有金属，第1期 1979;Semiconductor Silicon Crystal Technology F.Shimura,178.179 1989 * |
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Owner name: SHANGHAI KAMUDANKE SOLAR ENERGY TECHNOLOGY CO., L Free format text: FORMER OWNER: KAMUDANKE SEMICONDUCTOR CO., LTD., SHANGHAI Effective date: 20071116 |
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Effective date of registration: 20071116 Address after: 201300 Shanghai Huinan town Simon intelligent court Patentee after: Shanghai Comtec Solar Technology Co., Ltd. Address before: 201300 Shanghai Huinan town Nanhui District Simon intelligent court Patentee before: Kamudanke Semiconductor Co., Ltd., Shanghai |
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Effective date of registration: 20180611 Address after: 226601 Donghai Road (East) 12, Haian Development Zone, Haian County, Nantong, Jiangsu. Patentee after: Comtec Solar (Jiangsu) Co., Ltd. Address before: 201300 Shanghai Huinan town Simon intelligent court Patentee before: Shanghai Comtec Solar Technology Co., Ltd. |
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