CN1320560C - Method for preparing conductive material using femtosecond laser double photon - Google Patents
Method for preparing conductive material using femtosecond laser double photon Download PDFInfo
- Publication number
- CN1320560C CN1320560C CNB2004100430006A CN200410043000A CN1320560C CN 1320560 C CN1320560 C CN 1320560C CN B2004100430006 A CNB2004100430006 A CN B2004100430006A CN 200410043000 A CN200410043000 A CN 200410043000A CN 1320560 C CN1320560 C CN 1320560C
- Authority
- CN
- China
- Prior art keywords
- conductive material
- preparing
- photon
- conductive
- femtosecond laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000004020 conductor Substances 0.000 title claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 33
- 238000012545 processing Methods 0.000 claims abstract description 26
- 238000010521 absorption reaction Methods 0.000 claims abstract description 14
- 239000012811 non-conductive material Substances 0.000 claims abstract description 11
- 238000006552 photochemical reaction Methods 0.000 claims description 14
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 13
- 229910052740 iodine Inorganic materials 0.000 claims description 13
- 239000011630 iodine Substances 0.000 claims description 13
- 229920000767 polyaniline Polymers 0.000 claims description 13
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 11
- 229920001940 conductive polymer Polymers 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 10
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 9
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 239000011259 mixed solution Substances 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 239000012047 saturated solution Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 239000000178 monomer Substances 0.000 claims description 4
- 239000005062 Polybutadiene Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229920002857 polybutadiene Polymers 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims 2
- 230000008030 elimination Effects 0.000 claims 1
- 238000003379 elimination reaction Methods 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
- 229920006395 saturated elastomer Polymers 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000004377 microelectronic Methods 0.000 abstract description 13
- 238000003672 processing method Methods 0.000 abstract description 5
- 230000003993 interaction Effects 0.000 abstract 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 24
- 239000002253 acid Substances 0.000 description 10
- 239000002322 conducting polymer Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 125000002346 iodo group Chemical group I* 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 150000003233 pyrroles Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007848 Bronsted acid Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013068 control sample Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 150000001934 cyclohexanes Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- ROMWNDGABOQKIW-UHFFFAOYSA-N phenyliodanuidylbenzene Chemical compound C=1C=CC=CC=1[I-]C1=CC=CC=C1 ROMWNDGABOQKIW-UHFFFAOYSA-N 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010094 polymer processing Methods 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Laser Beam Processing (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
一种利用飞秒激光双光子制备导电材料的方法，涉及导电材料加工技术领域。其包括：a)步，使用的光源为蓝光飞秒激光，产生的方法为：将波长在750～850nm、脉冲宽度在60～100fs的飞秒激光，经倍频后形成蓝光375～425nm的飞秒光；或使用其它直接产生蓝光的飞秒激光作为加工的光源。b)步，把蓝光375～425nm的飞秒光经透镜聚焦到所要加工的非导电材料上；c)步，通过计算机控制样品位置或激光焦点照射在非导电材料内的位置，使激光与材料发生相互作用，发生双光子吸收，在曝光的位置形成导电的功能材料。本发明较之现有MEMS微型电子器件的加工方法，具有真三维、高分辨、导电性、一次性加工等特点。The invention discloses a method for preparing conductive materials by using femtosecond laser two-photons, which relates to the technical field of conductive material processing. It includes: a) step, the light source used is a blue femtosecond laser, and the method of generation is: the femtosecond laser with a wavelength of 750-850nm and a pulse width of 60-100fs is frequency-multiplied to form a femtosecond laser with a blue light of 375-425nm. second light; or use other femtosecond lasers that directly generate blue light as the light source for processing. Step b) focuses the femtosecond blue light of 375-425nm on the non-conductive material to be processed through the lens; An interaction occurs, two-photon absorption occurs, and a conductive functional material is formed at the exposed position. Compared with the processing method of the existing MEMS microelectronic device, the present invention has the characteristics of true three-dimensionality, high resolution, conductivity, one-time processing and the like.
Description
Technical field
The present invention relates to the electric conducting material processing technique field, relate to the method for the Fs laser double photon machining 3 D electric conducting material of blue light.The method has very characteristics such as three-dimensional, high-resolution, conductivity, disposable processing than the processing method of existing MEMS microelectronic device.
Technical background
The fast development of microelectronic has changed our scientific technological advance history and daily life.The research of microelectronic device and application level have become the important symbol of weighing a national science and technology level.Household electrical appliance, mobile electronic device, small-sized household computer and giant brain have been widely used in each and every one field of social life.1860s has been made first integrated circuit (ICs) in the world, indicate the beginning of electronics industry revolution. hereafter microelectronics industry has experienced unprecedented high speed development, and it is faster, littler, complicated and more cheap more that integrated circuit constantly becomes.
Microelectronic device mainly is made up of three kinds of materials, conductor, semiconductor and insulator. and current-carrying part mainly is to be used to provide electrode, electrostatic protection and electromagnetic shielding, and the insulation physical efficiency plays the effect of isolating and sealing current-carrying part.Conducting polymer is shown one's talent in numerous microelectronic materials with its exclusive characteristics.The first, eigenstate (attitude of not mixing) conducting polymer poor electric conductivity belongs to insulator. and change its electric conductivity by adding oxidant, reducing agent or Bronsted acid, make it to become semiconductor or conductor.In same system, just can have the electric conductivity different piece simultaneously like this by chemical reaction.The second, can regulate and control electric conductivity by the type and the doping level of controlled doping agent.The 3rd, conducting polymer also has light weight, easily makes and characteristics such as pliability height.Therefore, be that the microelectronic component that material is made will become the new growing point of microelectronic with the high polymer.
The method of processing conducting polymer microelectronic component mainly is to form printed circuit by electron beam exposure at present.Its process principle is with the Polymer Processing film forming, covers with photomask on it, places irradiation under electron beam or the high light then.Provide enough energy to make it to take place photochemical reaction in the place of illumination, thereby reach the difference of exposed portion and unexposed portion material electric conductivity, promptly conductor (or semiconductor) and insulator form microelectronic component.But since absorbed light (absorbed in electron beam exposure is electronics) from the etching agent surface up to substrate, so electron beam exposure is limited in the making of 2D or 2.5D structure.
The MEMS Micrometer-Nanometer Processing Technology of comparative maturity mainly comprises: the little processing of body silicon (mainly comprising dry method and wet etching), surperficial microfabrication (mainly comprising the preparation and the corrosion of structure sheaf and sacrifice layer), bonding techniques (mainly comprising electrostatic bonding and thermal bonding), high depth-to-width ratio micro process technology (mainly comprising LIGA and DEM technology) are in conjunction with the technology (photoetching, plating, diffusion, deposit etc.) of integrated circuit.Traditional optical exposure and electron beam exposure carry out the technology comparative maturity that two-dimensional structure is made.Yet (for example: photonic crystal, biotechnology, 3D guide technology etc.) needed the little processing of 3D during the generation of new unit and new material and MEMS used.Though multilayer technique can be realized by the long-pending 2D structure of treadle-operated tilt hammer for hulling rice in layer,, even simple structure, very big, the required fund of layer and the technique of alignment difficulty between the layer is costliness very.So, explore multiple material the 3 D complex figure Micrometer-Nanometer Processing Technology and be fit to the material of its processing request, be MEMS research deeply development be badly in need of the problem that solves.
Two-photon excitation is meant that medium absorbs two low-energy photons simultaneously and is excited to higher energy state, to speed rapidly to drive lower state and the process of launching a fluorescent photon from upper state then. the double photon three dimension process technology is based on such notion: atom or molecule absorb the rayed of sufficient intensity simultaneously, under the object lens focusing of higher numerical aperture, two photon absorption is limited in the spatial volume～λ at focus place
3(λ is a Wavelength of Laser) among a small circle in, chemistry and physical process just occur in the volume of this local, behind the absorbed two-photon in the volume of this local, material will become liquid or gas or contraction or expansion or solidify, and other possible variations take place, any variation does not then take place in other outer zones of focus, utilizes this characteristics, carries out three-dimensional any direction microfabrication by the position of accurate moving focal point in sample.Yet being fit to the two-photon material processed at present also only is the material of photoetching resinae, can not satisfy the requirement of microelectronic device processing.Recently developed the etching material of two-photon processing metal.But because the defective of metal material itself, cause the metal pattern lines that process discontinuous smooth, required working power is big.Therefore must develop and seek to be suitable for the novel conductive material and the processing method of two-photon processing characteristic.In recent years, utilize the two-photon laser technology to carry out the existing report of 3D microfabrication, but material processed and device all are by non electrically conductive material or nonconducting polymeric material, these materials and device all do not have actual application value in MEMS.
Summary of the invention
The objective of the invention is to propose a kind of new approaches of making miniature conducting function material, promptly use the method for the Fs laser double photon microfabrication of blue light, processing conducting function material and novel three-dimensional conducting function device.
For achieving the above object, technical solution of the present invention has proposed a kind of method of utilizing Fs laser double photon to prepare electric conducting material, it is characterized in that comprising:
A) in the step, the light source that uses as blue light femtosecond laser, the method for generation is: wavelength at 750-850nm, the pulse duration femtosecond laser at 60-100fs, is formed the femtosecond light of blue light 375-425nm after frequency multiplication;
B) step, the femtosecond light of blue light 375-425nm through lens focus to non-conducting material to be processed, carry out the two-photon excitation processing of blue light;
C) step is radiated at position in the non-conducting material by computer control sample position or laser spot, and laser and material are interacted, after main effect is material generation two photon absorption, and the functional material that formation is conducted electricity.
The described method for preparing electric conducting material, the light source in its described a) step, or use other directly to produce the light source of the femtosecond laser of 375-425nm blue light as processing.
The described method for preparing electric conducting material, the frequency multiplication in its described a) step is through bbo crystal or ktp crystal or lbo crystal frequency multiplication.
The described method for preparing electric conducting material, its described b) lens in the step are microscopical object lens.
The described method for preparing electric conducting material, its described initial raw materials is a non-conducting material, itself does not absorb near the wave-length coverage of blue light femtosecond laser incident light, and near the frequency multiplication position of the femtosecond laser wavelength (375-425nm) of blue light, absorption is arranged, and can after taking place, corresponding photon induced photochemical reaction form electric conducting material.
The described method for preparing electric conducting material, its described absorption is that two photon absorption takes place at the focus place of blue light femtosecond laser incident light, is equivalent to absorb the twice energy and photochemical reaction takes place.
The described method for preparing electric conducting material, its described photochemical reaction is conductivity and the dissolubility generation marked change that makes the non-conducting material itself at exposure and unexposed place.
The described method for preparing electric conducting material, its described photochemical reaction, mixing for photon induced photic iodine cancellation or the acid of photon induced light makes it form conducting polymer materials by non-conductive material polymerization or doping.
The described method for preparing electric conducting material, it also comprises d) step, select suitable solvent with c) go on foot unexposed part flush away in the conducting function material that obtains, the part of remaining conduction constitutes three-dimensional electric conducting material, can further be processed into three-dimensional conducting function device.
The described method for preparing electric conducting material, its described non-conducting material comprises: the poly-conducting polymer that forms along butadiene, polyaniline in eigenstate and pyrrole monomer of iodo.
The described method for preparing electric conducting material, it also comprises to the processing of non-conducting material before processing, that is:
A) will gather suitable butadiene and elemental iodine and be dissolved in cyclohexane, the room temperature nitrogen environment stirs down, behind certain hour, gets the mixed solution of poly-suitable butadiene of iodo and iodine; It is standby mixed solution to be dripped film again; Or
B) polyaniline in eigenstate is dissolved in the N-methyl pyrrolidone, forms saturated solution; Light acid agent is added the polyaniline saturated solution, fully stir and spend the night; The solution spin-coating film is standby; Or
C) with pyrroles and perchloric acid with
2: 1Mixing is dissolved in the oxolane, then mixed solution is added dropwise in the suitable miniature vessel standby.
The described method for preparing electric conducting material, its described poly-suitable butadiene is 185.5mg, and elemental iodine is 22.5mg, and cyclohexane is 25ml, about 162 hours of mixing time.
The described method for preparing electric conducting material, its described light acid agent is 0.05g, the polyaniline saturated solution is 2ml.
The described method for preparing electric conducting material, its described solvent is cyclohexane, N-methyl pyrrolidone and oxolane.
The present invention has very characteristics such as three-dimensional, high-resolution, conductivity, disposable processing than the processing method of existing MEMS microelectronic device.
Embodiment
The two-photon processing method: with wavelength at 750-850nm, the femtosecond light of the blue light 375-425nm that pulse duration forms after the bbo crystal frequency multiplication at the femtosecond laser of 60-100fs is through microscopical object lens 40x, 60x, perhaps 100x focuses on the non-conducting material to be processed, the position in non-conducting material by computer control sample or laser, laser and material are interacted, form the functional material of conduction, and utilize suitable solvent (to comprise that all that can dissolve the solvent of the unexposed portion in the rapidoprint, such as: cyclohexanes etc. can dissolve unexposed poly-along butadiene, the N-methyl pyrrolidone can dissolve unexposed intrinsic polyaniline, oxolane can the unpolymerized pyrrole monomer of flush away) with unexposed part flush away, form satisfactory three-dimensional conducting function device.
Concrete rapidoprint and Fs laser double photon method are:
(1), iodine replaces poly-along the butadiene photic iodine doping method of two-photon of (poly-along butadiene, English name cis-polybutadiene is called for short cis-pb).
Principle:
Iodo is poly-to issue iodine on the third contact of a total solar or lunar eclipse chemical reaction cancellation strand along butadiene in the illumination of Fs laser double photon, generates long conjugated structure.The iodine of cancellation simultaneously also can mix to material simultaneously.Thereby cause illumination place obviously to improve, reach the purpose of processing than without illumination place conductivity.
Concrete grammar:
The poly-preparation of iodo along butadiene
To gather suitable butadiene (cis-pb (Aldrich)) 185.5mg and elemental iodine 22.5mg and be dissolved in the 25ml cyclohexane, the room temperature nitrogen environment stirs down, approximately stirs 162 hours, can get the poly-mixed solution along butadiene and iodine of iodo.
The preparation of conductive devices
The poly-suitable butadiene solution of iodo is dripped film, because sample does not have absorption and at the 200nm place stronger absorption arranged at the 400nm place.Can with wavelength be the femtosecond laser of 800nm by bbo crystal, frequency multiplication produces the femtosecond laser of 400nm material is processed.Sample absorbs two 400nm photons (being equivalent to a 200nm photon) simultaneously photochemical reaction takes place at the focus place, generate conducting polymer composite.Thereby make exposure and the conductivity generation marked change of unexposed place, and utilize the unexposed non-conductive material part of cyclohexane flush away, reach the purpose of machining 3 D conductive devices.
(2), the double-photon optical of polyaniline acid doping method.
Principle:
Mainly utilize light acid agent (being generally the salt of triphenylsulfonium or diphenyl iodine) under the double-photon optical of femtosecond laser shines, to discharge the characteristics of Bronsted acid, polyaniline in eigenstate carried out light acid mix, make its conduction.
Concrete grammar:
Polyaniline in eigenstate is dissolved in NMP (N-methyl pyrrolidone) forms saturated solution.0.05g light acid agent is added 2ml polyaniline saturated solution, fully stir and spend the night.With the solution spin-coating film, can carry out the two-photon microfabrication.Can with wavelength be the femtosecond laser of 800nm by bbo crystal, frequency multiplication produces 400nm laser material is carried out two-photon processing.Photochemical reaction takes place in sample absorbs two femtoseconds simultaneously at the focus place 400nm photon (being equivalent to a 200nm photon), and acid is separated out in light acid agent, generates conducting polymer composite.Thereby make exposure and the conductivity generation marked change of unexposed place, and utilize the unexposed non-conductive material part of N-methyl pyrrolidone flush away, reach the purpose of machining 3 D conductive devices.
(3), photon induced pyrrole monomer forms the method for conducting polymer.
Principle:
Utilize the pyrroles that the characteristics of polymerization take place under double-photon optical shines, mix with acid simultaneously, generate the electric polypyrrole polymer at the focus place that femtosecond laser focuses on.
Concrete grammar:
With pyrroles and perchloric acid with certain proportion,
BestPyrroles more (such as 2: 1) mixing is dissolved in the oxolane, then mixed solution is added dropwise in the suitable miniature vessel, can carry out the Fs laser double photon microfabrication.Can with wavelength be the femtosecond laser of 800nm by bbo crystal, frequency multiplication produces 400nm laser material is processed.Photochemical reaction takes place in sample absorbs two femtoseconds simultaneously at the focus place 400nm photon (being equivalent to a 200nm photon), generates conducting polymer composite.Thereby make exposure and the conductivity generation marked change of unexposed place, and utilize the unexposed non-conductive material part of oxolane flush away, reach the purpose of machining 3 D conductive devices.
More than the characteristics of three kinds of materials be that this does not absorb material near in the wave-length coverage of femtosecond laser incident light, and absorption is arranged near the frequency multiplication wavelength of laser, and corresponding photochemical reaction can take place its conduction property is changed.In the process of two-photon processing, photochemical reaction takes place in the non-conducting material generation two photon absorption (being equivalent to absorb the twice energy) at the focus place, forms the polymer of conduction, reaches the purpose of processing.
Claims (13)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100430006A CN1320560C (en) | 2004-06-17 | 2004-06-17 | Method for preparing conductive material using femtosecond laser double photon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100430006A CN1320560C (en) | 2004-06-17 | 2004-06-17 | Method for preparing conductive material using femtosecond laser double photon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1710672A CN1710672A (en) | 2005-12-21 |
| CN1320560C true CN1320560C (en) | 2007-06-06 |
Family
ID=35706893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100430006A Expired - Fee Related CN1320560C (en) | 2004-06-17 | 2004-06-17 | Method for preparing conductive material using femtosecond laser double photon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1320560C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102320553B (en) * | 2011-07-04 | 2014-11-26 | 中国科学院理化技术研究所 | Method for manufacturing micro-nano structure device by using laser two-photon direct writing technology |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1465075A (en) * | 2001-08-09 | 2003-12-31 | 松下电器产业株式会社 | Method for producing conductive paste and method for producing printed circuit board |
| EP1420439A2 (en) * | 2002-11-14 | 2004-05-19 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
-
2004
- 2004-06-17 CN CNB2004100430006A patent/CN1320560C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1465075A (en) * | 2001-08-09 | 2003-12-31 | 松下电器产业株式会社 | Method for producing conductive paste and method for producing printed circuit board |
| EP1420439A2 (en) * | 2002-11-14 | 2004-05-19 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1710672A (en) | 2005-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liu et al. | Full defects passivation enables 21% efficiency perovskite solar cells operating in air | |
| Zhang et al. | Chemical passivation and grain-boundary manipulation via in situ cross-linking strategy for scalable flexible perovskite solar cells | |
| Lingstedt et al. | Effect of DMSO solvent treatments on the performance of PEDOT: PSS based organic electrochemical transistors | |
| Kim et al. | Monolithically integrated high-density vertical organic electrochemical transistor arrays and complementary circuits | |
| Zhou et al. | Fully printed flexible smart hybrid hydrogels | |
| JP2009516380A (en) | Method for patterning a thin film | |
| TW200847252A (en) | High throughput, low cost dual-mode patterning method for large area substrates | |
| Jeong et al. | Large-area nonfullerene organic solar cell modules fabricated by a temperature-independent printing method | |
| Luo et al. | Engineering bonding sites enables uniform and robust self-assembled monolayer for stable perovskite solar cells | |
| KR100976434B1 (en) | Laminated structure, electronic device using same, manufacturing method thereof, electronic device array and display device | |
| TWI285800B (en) | Method for forming photoresist pattern, method for forming wiring pattern, method for making semiconductor devices, electro-optical device and electronic apparatus | |
| Zhao et al. | Enhanced interface adhesion with a polymeric hole transporter enabling high-performance air-processed perovskite solar cells | |
| US20230022693A1 (en) | Polymer compositions for vertical channel organic electrochemical transistors and complementary logic circuits | |
| Li et al. | Vapor exchange deposition of an air-stable lead iodide adduct on 19% efficient 1.8 cm2 perovskite solar cells | |
| Xu et al. | Effect of H2SO4 Solution Treatment on Adhesion, Charge Transfer, and Catalytic Performance of Screen‐Printed PEDOT: PSS | |
| Kuila et al. | A synergistic coassembly of block copolymer and fluorescent probe in thin film for fine-tuning the block copolymer morphology and luminescence property of the probe molecules | |
| Kim et al. | Photo-crosslinkable organic materials for flexible and stretchable electronics | |
| US20110008548A1 (en) | Process for manufacturing conductive tracks | |
| CN1320560C (en) | Method for preparing conductive material using femtosecond laser double photon | |
| Cordonier et al. | Metallic film formation using direct micropatterning with photoreactive metal complexes | |
| Zhou et al. | High‐Conductivity and Super‐Resolution PEDOT: PSS Patterns by Femtosecond Laser‐Induced Dissociation and Reconstruction for Efficient Electromagnetic Interference Shielding and Ultrafast Response Electrochromic | |
| JP2014512075A (en) | Surface flattening | |
| Wei et al. | Laser-induced optoelectronic tuning of perovskite nanocrystal films for multicolor pattern displays | |
| CN108922656B (en) | Conductive polymer film and patterning manufacturing method and application thereof | |
| Singh et al. | Impact of specifically shaped plasmonic gold nanoparticles and a double cathode interfacial layer on the performance of conducting polymer-based photovoltaics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070606 Termination date: 20110617 |