CN1316640C - Light-emitting element capable of increasing light-emitting action area - Google Patents

Abstract

The invention relates to a light-emitting element, in particular to a light-emitting element capable of improving a light-emitting action area, which is mainly characterized in that a first material layer and a second material layer are sequentially arranged on the surface of an LED substrate, a PN interface is naturally formed between the first material layer and the second material layer, in addition, a first extending groove which can penetrate through the second material layer and part of the first material layer is arranged, a first extending electrode is arranged in the first extending groove, the first extending electrode can be electrically connected with a first electrode arranged on the upper surface of the part of the second material layer, so that the first electrode and a second electrode which is also arranged on the upper surface of the other part of the second material layer have approximately the same horizontal position, the subsequent processing is convenient, and the light-emitting action area of the PN interface can be relatively increased because the volume of part of the second material layer which needs not to be removed like a common light-emitting element to form the first electrode, therefore, the luminous brightness is effectively improved and the service life is prolonged.

Description

Light-emitting elements that increase the luminous action area

technical field

The invention relates to a light-emitting element, especially a light-emitting element that can increase the luminous area to effectively improve the luminous brightness and service life.

Background technique

Light-Emitting Diode (LED; Light-Emitting Diode) has been widely used in Indicator lights, advertising billboards, traffic lights, car lights, display panels, communication appliances, consumer electronics and other products.

Commonly used light-emitting elements, such as planar light-emitting diodes, as shown in Figure 1A and Figure 1(B), its light-emitting element 10 is mainly formed on an LED power supply substrate 11 with a first material layer 131 and a second material layer in sequence. The epitaxial layer 13 formed by combining the material layers 135 naturally forms a PN interface 133 with a luminescent effect between the first material layer 131 and the second material layer 135 . In order to allow the working power to pass through the PN interface 133 smoothly, part of the second material layer 136 and part of the PN interface 137 must be removed, and part of the cross-sectional area length thereof is at least H1 (and the length of the remaining effective active area is H2), resulting in part The upper surface of the first material layer 131 can be exposed, and the first electrode 17 can be fixed on the exposed part of the surface of the first material layer 131 . Also, in order to allow the operating current to be evenly distributed, a transparent contact layer (TCL) 19 is provided on the surface of the remaining second material layer 135, and a second electrode 15 and the first electrode 17 are fixed on the upper surface of the transparent contact layer 19. A conductive circuit that can pass through the PN interface 133 is formed between the second electrode 15 and thereby generate the front projection light source L1.

Although the common planar light emitting device 10 can generate the front projection light source L1 through the PN interface 133, it still has the following disadvantages:

1. The front projection light source L1 generated by the PN interface 133 will be partially blocked and absorbed by the second electrode 15 , which will relatively reduce the output luminous flux and brightness of the light emitting element 10 .

2. Part of the PN interface 137 must be removed for the placement of the first electrode 17 , and part of the luminescence active region H1 will be lost, thereby reducing the luminance of light.

3. Part of the second material layer 135 must be removed for the placement of the first electrode 17 , causing the first electrode 17 and the second electrode 15 to not be at the same level, which will increase the difficulty in subsequent fabrication.

4. Since part of the PN interface 137 will be removed, the area of its luminous effect will be squeezed, not only the working high temperature will be easily concentrated in a certain area, thus reducing the service life of the component, and it is not suitable for high-power luminescence element.

For this reason, the industry has developed another common light-emitting element, as shown in Figure 2, which is a flip-chip light-emitting diode (Flip Chip LED). The flip-chip light-emitting diode 20 is mainly the previous planar light-emitting element (10) To be reversed, the first electrode 17 and the second electrode 150 are connected to a first conductive circuit 297 on a substrate 29 via a first conductive bump (such as a solder ball) 279 and a second conductive bump 259 respectively. and the second conductive circuit 295 are electrically connected. In this way, the first conductive circuit 297, the first conductive bump 279, the first electrode 17 and the second electrode 150, the second conductive bump 259, and the second conductive circuit 295 can form a conductive path, and provide the PN interface 133 to work Current, and the rear projection light source L2 generated by the PN interface 133 can be projected out through the direction of the LED substrate 11 without being blocked and absorbed by the second electrode 150 at all, thereby improving the output luminous flux and brightness.

In addition, the second electrode 150 can be made of a conductive material with a light-reflecting effect, or a light-reflecting layer 155 is provided between the epitaxial layer 13 and the second electrode 150, so that the front-facing light source produced by the PN interface 133 can be projected (L1) is reflected and guided to the correct light emitting position to become a reflected light L4.

Although commonly used flip-chip light-emitting diodes can obtain better light-emitting efficiency, they still have the following structural shortcomings:

1. Part of the PN interface (137) still needs to be removed for the placement of the first electrode 17, which will lose part of the luminescence active area and reduce the luminance of light.

2. Part of the second material layer (136) must still be removed for the placement of the first electrode 17, causing the first electrode 17 and the second electrode 150 to not be at the same horizontal position, which will relatively increase the difficulty in subsequent manufacturing.

3. Since part of the PN interface (137) will be removed, the relative luminescence area will be squeezed, not only the working high temperature will easily be concentrated in a certain area, and the service life of the light-emitting element will be reduced, and it is not suitable for high Power luminous element.

4. The first electrode 17 and the second electrode 15 are not at the same horizontal position, and the corresponding volumes of the first conductive bump 279 and the second conductive bump 259 are also different, resulting in difficulty in manufacturing.

5. Flip-chip light-emitting devices require bumper and solder ball alignment technology, which not only has a high level of technology, but also greatly increases the production cost.

Contents of the invention

Therefore, how to design a novel light-emitting element can not only effectively and evenly distribute the working current density to improve the light-emitting efficiency and luminous brightness, but also, the first electrode and the second electrode can be naturally located at the same level, and there is It is beneficial to subsequent production, which is the key point of the present invention.

The main purpose of the present invention is to provide a light-emitting element that can increase the luminous area, which can effectively solve the technical difficulties faced by the above-mentioned common light-emitting elements.

The secondary purpose of the present invention is to provide a light-emitting device with increased luminescence area, which can greatly reduce the removal area of the second material layer and PN interface, thereby effectively improving the luminescence area and light-extraction efficiency.

Yet another object of the present invention is to provide a light-emitting element that can increase the luminescence area, and the first electrode and the second electrode can be located at the same horizontal position, which facilitates subsequent fabrication.

Yet another object of the present invention is to provide a light-emitting element that can increase the luminous area. With a larger luminous area, it can not only effectively improve the service life of the light-emitting element, but also be suitable for high-power light-emitting elements.

In order to achieve the above purpose, therefore, in a preferred embodiment of the present invention, its main structure is to include: a light-emitting element that can improve the area of luminescence, and its main structure is to include: an LED substrate; an epitaxial layer, including a first material layer and a second material layer, wherein the first material layer is formed on the upper surface of the LED substrate, and the second material layer is formed on the upper surface of the first material layer, and the first material layer and the second material layer A PN interface is naturally formed between the layers; at least one first extension groove can penetrate the second material layer and extend to a part of the volume of the first material layer, and a groove isolation is arranged in the first extension groove layer and a first extension electrode, and the first extension electrode can be electrically isolated from the second material layer by the groove isolation layer; a first electrode is fixed on the second material layer through a surface isolation layer A part of the upper surface of the second material layer can be electrically connected with the first extension electrode; and a second electrode is fixed on the other part of the upper surface of the second material layer.

Description of drawings

Fig. 1(A): is a structural cross-sectional view of a commonly used planar light-emitting element;

Figure 1(B): is a top view of the structure of a commonly used planar light-emitting element;

Figure 2: It is a cross-sectional view of the structure of a commonly used flip-chip light-emitting element;

Fig. 3 (A): is the structural sectional view of a preferred embodiment of the light-emitting element of the present invention;

Fig. 3 (B): is the top view of the structure of the embodiment shown in Fig. 3 (A) of the present invention;

Fig. 4(A): is a structural sectional view of another embodiment of the light-emitting element of the present invention;

Fig. 4 (B): is the top view of the structure of the embodiment shown in Fig. 4 (A) of the present invention;

Fig. 5(A): is a structural sectional view of another embodiment of the light-emitting element of the present invention;

Fig. 5 (B): is the top view of the structure of the embodiment shown in Fig. 5 (A) of the present invention;

Figure 6: is a cross-sectional view of the structure of the present invention applied to flip-chip light-emitting elements;

Fig. 7 (A): is the structural sectional view of another embodiment of the present invention;

Fig. 7 (B): is the top view of the structure of the embodiment shown in Fig. 7 (A) of the present invention;

Fig. 8 (A): is the structural sectional view of another embodiment of the present invention;

Fig. 8 (B): is the top view of the structure of the embodiment shown in Fig. 8 (A) of the present invention;

Fig. 9 (A): is the structural sectional view of another embodiment of the present invention;

Fig. 9 (B): is the top view of the structure of the embodiment shown in Fig. 9 (A) of the present invention;

Fig. 10 (A): is the structural sectional view of another embodiment of the present invention;

Fig. 10 (B): is the top view of the structure of the embodiment shown in Fig. 10 (A) of the present invention; and

Fig. 11 is a structural sectional view of another embodiment of the present invention.

Detailed ways

First, please refer to FIG. 3(A) and FIG. 3(B), which are respectively a structural cross-sectional view and a top view of a preferred embodiment of the light-emitting element of the present invention; An epitaxial layer 33 composed of a first material layer 331 and a second material layer 335 is sequentially formed on the substrate 31. After the first material layer 331 is formed on the upper surface of the LED substrate 31, the upper surface The second material layer 335 is formed, and a PN interface or light-emitting region 333 is naturally formed between the first material layer 331 and the second material layer 335 , so that a planar light-emitting diode can be formed. At least one first extension groove 371 that can penetrate the second material layer 335 and part of the first material layer 331 is drilled at an appropriate position on the second material layer 335, and the inner surface of the first extension groove 371 and the first A groove isolation layer 377 and a surface isolation layer 379 with insulating properties are separately provided on the predetermined positions of the electrodes 37, and a first extended electrode 375 with conductive properties is further provided in the groove isolation layer 377. The first extended electrode 375 can It is electrically connected with a first electrode 37 disposed on the upper surface of the surface isolation layer 379 , and part of the volume of the first electrode 37 is located at the vertical extension position of the surface isolation layer 379 . Furthermore, in order to distribute the operating current evenly, an ohmic contact layer or transparent contact layer (TCL) 39 is provided on the surface of the remaining second material layer 335 , and a second electrode 35 is provided on the upper surface of the transparent contact layer 39 .

Because the present invention can utilize the first extension groove 371 and the first extension electrode 375 to extend the conductive line of the first electrode 37 to the first material layer 331, it does not need to drill or remove a large area like the usual structure. The second material layer (136) and the PN interface (137). Therefore, the first electrode 37 is arranged on the vertical extension position of the upper surface of the second material layer 335, and has an approximate or the same horizontal position as the second electrode 35, which is the same as the common first electrode (17) and the second electrode ( 15) The situation of unevenness is completely different, so it can be beneficial to the subsequent production.

Furthermore, please refer to FIG. 4(A) and FIG. 4(B), which are structural cross-sectional views and top views of another embodiment of the present invention; as shown in the figure, it is mainly designed to guide the front light source of the above-mentioned embodiment To the correct light emitting position, therefore, it can completely cover the first electrode 370 and the second electrode 350 on the upper surface of the second material layer 335 in a large-area manner, and are respectively made of a material with conductive and reflective functions . Wherein, a surface isolation layer 379 is disposed between the first electrode 370 and the second material layer 335 , and the first electrode 370 can form an electrical connection with the first material layer 331 through the first extension electrode 375 . In addition, the first extension electrode 375, the first extension groove 371 and the groove isolation layer 377 can be distributed in various geometric patterns such as straight lines or circles in various positions of the surface isolation layer 379, so as to fully achieve a uniform distribution of the operating current and improve the light emission. Brightness, extended service life, suitable for the purpose of high-power light-emitting components.

Moreover, since the first electrode 370 and the second electrode 350 have the function of reflecting light, the front light source generated by the PN interface will be reflected by the first electrode 370 or the second electrode 350 to become a reflected light source L4, and be guided to the correct light direction. Also, in order to allow the active area of the PN interface to be more enlarged, a transparent contact layer (TCL) or an ohmic contact layer 355 may be provided on the upper surface of the second material layer 335, so that the applied current can pass through the first electrode 370. The PN interface extends vertically and is used to generate backlight L3.

Of course, the ohmic contact layer 355 can also be made of a reflective material, or just a reflective layer, which can also reflect the front light source generated by the PN interface to become a reflective light source L4.

Also, referring to Fig. 5(A) and Fig. 5(B), it is a structural sectional view and a top view of another embodiment of the present invention; as shown in the figure, it is mainly the embodiment shown in Fig. The second electrode 352 completely covers most of the upper surface of the second material layer 335, while the remaining part is provided with a surface isolation layer 379, and a first extending groove 371, The groove isolation layer 377 and the first extension electrode 375, in this way, the front light source generated by the PN interface can be directly guided to the correct light output direction by the reflection of the second electrode 352, so as to become a reflection light source L4.

In addition, please refer to FIG. 6 , which is a structural sectional view of another embodiment of the present invention; The electrode 370 can be electrically connected with a first conductive circuit 497 provided on a substrate 49 through the first conductive bump 479, and the second electrode 350 can be connected with a first conductive circuit 497 provided on a substrate 49 through the second conductive bump 459. The second conductive circuit 495 on the substrate 49 is electrically connected, so that a flip-chip LED (FlipChipU0) can be formed.

Of course, the first conductive bump 479 and the second conductive bump 459 can be made of a conductive solder material, tin ball, metal-containing substance or any conductive substance, and the substrate 49 can be selected as a ceramic , glass, aluminum nitride, silicon carbide, aluminum oxide, epoxy resin, urea resin, plastic, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board, PC board or metal-containing compounds.

Since the light-emitting element 50 of the present invention has the first electrode 370 and the second electrode 350 at approximately or the same horizontal position, the first conductive bump 479 and the second conductive bump 459 required for its subsequent fabrication can be set For those with the same size and volume, it is not only convenient to manufacture, but also because the force on both sides of the first conductive bump 479 and the second conductive bump 459 is the same, so that the light-emitting element 50 will not be deflected. This can relatively improve the working stability of the components.

Moreover, since the light-emitting area of the light-emitting element 50 or the PN interface 333 does not remove too much of the active area, it can also increase the number of back-projected light sources L2 and reflective light sources L4 in addition to the conventional flip-chip light-emitting diode structure. A rear projection light source L3 not only relatively increases its luminous brightness, but also relatively reduces the current density of the operating current and the operating temperature in a certain area due to the increase in the area of the luminous effect, thereby effectively improving the service life of the light-emitting element .

Next, please refer to FIG. 7(A) and FIG. 7(B), which are respectively a structural cross-sectional view and a top view of another embodiment of the present invention; On the second material layer 335, adjacent to the preset position of the first electrode 57, there is an isolation groove 576 that can penetrate the second material layer 335 and part of the first material layer 331, and an isolation groove 576 can be optionally provided in the isolation groove 576 to increase insulation. The effective isolation layer 577 is used to replace the groove isolation layer 377 or the surface isolation layer 379 of the above-mentioned embodiments. A first extension groove 571 and a first extension electrode 575 are also provided on one side of the isolation groove 576, and the first extension electrode 575 can be electrically connected to the first electrode 57 disposed on a part of the surface of the second material layer 335 .

In this embodiment, in order to allow the operating current to be evenly distributed, a transparent contact layer (TCL) or an ohmic contact layer 39 may be provided on the surface of the second material layer 335, and then a transparent contact layer (TCL) or an ohmic contact layer 39 may be provided on the surface of the second material layer 335. Part of the surface of 39 is fixed with the second electrode 35 . In addition, the isolation groove 576 can be arranged at a suitable position of the second material layer 335, and the first electrode 57 is arranged along the side of the isolation groove 576, and at least one can be extended at a part of the first electrode 57. The second extension electrode 578 or the third extension electrode 579 runs through the second material layer 335 and part of the first material layer 331 , so that the working current can be distributed more uniformly. Since in this embodiment, the isolation groove 576 is mainly used for the purpose of isolating the first electrode 57 and the second electrode 35, therefore, both the first electrode 57 and the second electrode 35 can be disposed on the second material layer 335. Part of the upper surface has the same horizontal height, which is beneficial to the subsequent production process.

Of course, the second extension electrode 578 or the third extension electrode 579 can be selected to be a dot shape, a strip shape, a ring shape, a circle shape, a rectangle shape, a straight line, a semi-ring shape or a combination thereof. For example, in this embodiment, the first The second extension electrode 578 is in the shape of a dot, and the third extension electrode 579 is in the shape of a strip covering the entire side.

In addition, please refer to FIG. 8(A) and FIG. 8(B), which are respectively a structural cross-sectional view and a structural top view of another embodiment of the present invention; as shown in the figure, it mainly uses the first electrode 570 of the above-mentioned embodiment , The second electrode 350 covers the upper surface of the second material layer 335 in a large area. Wherein, the first electrode 570 can form an electrical connection relationship with the first material layer 331 through the first extension electrode 575 . In addition, the first extended electrode 575, the second extended electrode 578, and the third extended electrode 579 can be distributed on one side of the second material layer 335 in various geometric patterns such as straight lines or circles, and are electrically connected to the first electrode 570. sexual connection.

Of course, by virtue of the reflective effect of the first electrode 570 and the second electrode 350, or the reflective layer, ohmic contact layer or transparent contact layer 355 provided between the second material layer 335 and the second electrode 350, the PN The front light source generated by the interface is reflected to become a reflected light source L4, which is beneficial to the improvement of the luminous brightness.

Also, please refer to FIG. 9(A) and FIG. 9(B), which are respectively a structural cross-sectional view and a structural top view of another embodiment of the present invention; as shown in the figure, in this embodiment, it mainly uses the present invention The spirit is applied to ternary (AlGaAs) or quaternary (AlGalnP) light-emitting elements. An epitaxial layer 83 is grown on a semiconductor substrate 89 , such as gallium arsenide (GaAs) substrate. Wherein, the epitaxial layer 83 can be selected to be made of a ternary or quaternary compound. Moreover, a light-transmitting substrate 81 is formed on the upper surface of the second material layer 835, such as GaP substrate, glass (Glass), sapphire (Sapphire), silicon carbide (SiC), gallium arsenide phosphide (GaAsP), zinc selenide ( ZnSe), zinc sulfide (ZnS), zinc selenium sulfide (ZnSSe) or quartz, and the GaAs substrate 89 that is opaque and absorbs the projection light source is removed.

Next, an isolation groove 576 and a first isolation groove 571 that can penetrate the first material layer 831 and part of the second material layer 835 are chiseled on the surface of the first material layer 831, and the isolation groove 576 can be selected whether to set There is an isolation layer 577 , but the first extension electrode 575 needs to be disposed in the first isolation groove 571 , and can be electrically connected to the first electrode 570 disposed on a part of the surface of the first material layer 831 . The second electrode 350 is disposed on other parts of the surface of the first material layer 831 via the isolation groove 576 , and forms a conductive path with the first electrode 570 .

Next, please refer to FIG. 10(A) and FIG. 10(B), which are respectively a structural cross-sectional view and a structural top view of another embodiment of the present invention; as shown in the figure, in this embodiment, surrounding the light emitting element 90 first A third extension groove (or first extension groove) 671 that can penetrate the second material layer 335 and part of the first material layer 331 is chiseled, and a conductive or A transparent contact layer, an ohmic contact layer or a reflective layer 77 with a reflective effect, and an isolation layer 677 is provided around the reflective layer 77 and the second material layer 335, and a second extending groove 651 is chiseled at an appropriate position of the isolation layer 677, As a result, the second electrode 65 can be electrically connected to the second material layer 335 directly or through the reflective layer 77 . Surrounding the periphery of the second material layer 335 and interposing the isolation layer 677, a first ring-side electrode 674 can be provided. The first ring-side electrode 674 can be electrically connected to the first electrode 67, so as to achieve uniform distribution of operating current and improve The light-emitting area and the purpose of causing the first electrode 67 and the second electrode 65 to be at the same horizontal position.

Of course, the periphery of the second material layer 335 can also use at least one fourth extension electrode 678 in a dot state to replace the ring-shaped first ring-side electrode 674, and each fourth extension electrode 678 needs to be connected with the first ring side electrode 678 by a surface electrode 676. An electrode 67 is electrically connected.

Finally, please refer to FIG. 11 , which is a structural sectional view of another embodiment of the present invention; as shown in the figure, in this embodiment, the aforementioned light-emitting element 40 (as shown in FIG. A light-transmitting layer 94 or a heat-dissipating layer 99 is used to fix the object in a storage groove 917 formed on a substrate 91 .

The first electrode 370 of the light emitting element 40 can be electrically connected to a first conductive circuit 979 disposed on the substrate 91 via a first conductive lead 977 . Similarly, the second electrode 350 is electrically connected to the second conductive circuit 959 disposed on the other side of the substrate 91 through a second conductive lead 957 . Through the first conductive line 979, the first conductive lead 977, the first electrode 370 and the second electrode 350, the second conductive lead 957, and the second conductive line 959, the PN interface of the light-emitting element 40 can function to produce rear projection The light source L2, L3, and the front projection light source can be guided to the correct direction of light output through the first electrode 370, the second electrode 350 or the reflective layer, so as to become a reflective light source L4. With the support of ball alignment technology, traditional light-emitting element manufacturing methods can be used to obtain light-emitting efficiency similar to that of flip-chip light-emitting diodes, thereby simplifying the manufacturing process and greatly reducing production costs.

In addition, it can be selected as a ceramic, glass, aluminum nitride, silicon carbide, aluminum oxide, epoxy resin, urea resin, plastic, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board, PC board or metal containing For the substrate 91 of the compound, its storage groove 917 can be designed as a ring shape, a rectangle shape or a cone shape. Moreover, a reflective layer 915 can be provided around the storage groove 917, so that in addition to the normally projected light sources L2, L3, and L4, a reflective light source L5 can also be obtained, thereby effectively increasing its luminance.

Moreover, a color conversion layer 945 made of fluorescent material, phosphorescent material or a combination thereof may also be provided in the transparent layer 94, thereby changing the wavelength and color of the projected colored light.

In addition, the heat dissipation layer 99 with heat dissipation function is wrapped around the PN interface, so that the high operating temperature generated by the light emitting element 40 can be conducted to the outside of the light emitting element 40 through the heat dissipation layer 99, thereby being suitable for high-power light emission. in the component device.

Claims (39)

1, a kind of light-emitting component that improves the luminous zone of action is characterized in that, includes:

The one LED substrate of powering;

One epitaxial layer, include one first material layer and one second material layer, wherein first material layer is formed at this LED power supply upper surface of base plate, and second material layer is formed at this first material layer upper surface again, then includes a luminous zone between first material layer and second material layer naturally;

At least one first extending flute, run through second material layer, and extend to the partial volume of first material layer, be provided with a groove separator and one first extension electrode in first extending flute more in regular turn, first extension electrode then by the groove separator with this second material layer electrical isolation;

One first electrode is fixedly arranged on the part upper surface of this second material layer across a surperficial separator, electrically connect with this first extension electrode; And

One second electrode is fixedly arranged on other part upper surfaces of this second material layer.

2, light-emitting component as claimed in claim 1 is characterized in that, described this first electrode is and the same horizontal level of second electrode.

3, light-emitting component as claimed in claim 1 is characterized in that, described this first extension electrode is the vertical extent position that is positioned at first electrode.

4, light-emitting component as claimed in claim 1 is characterized in that, select between described this second electrode and second material layer to be provided with a transparent contact layer, ohmic contact layer, reflector layer and knockdown one of them.

5, light-emitting component as claimed in claim 1 is characterized in that, described should the surface separator and second material layer between select to be provided with a transparent contact layer, ohmic contact layer, reflector layer and knockdown one of them.

6, light-emitting component as claimed in claim 1, it is characterized in that, include a power supply substrate, its upper surface is respectively equipped with one first conductive layer and second conductive layer, wherein first conductive layer is to be electrically connected with this first electrode by one first conductive projection, and second conductive layer is then electrically connected with this second electrode by one second conductive projection.

7, light-emitting component as claimed in claim 6 is characterized in that, described this light-emitting component is a flip-chip light-emitting diode.

8, light-emitting component as claimed in claim 6, it is characterized in that, described this power supply substrate be chosen as a pottery, glass, aluminium nitride, carborundum, aluminium oxide, epoxy resin, urea resin, plastic cement, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board (PCB), PC plate, containing metal compound and knockdown one of them.

9, light-emitting component as claimed in claim 1 is characterized in that, described this light-emitting component is a plane light-emitting diode.

10, light-emitting component as claimed in claim 1, it is characterized in that, described this LED power supply substrate be chosen as GaP power supply substrate, glass, sapphire, carborundum, gallium arsenide phosphide, zinc selenide, zinc sulphide, selenium zinc sulphide, quartz and knockdown one of them.

11, light-emitting component as claimed in claim 10 is characterized in that, described this epitaxial layer is that to be chosen as a ternary, quaternary and knockdown one of them material thereof made.

12, light-emitting component as claimed in claim 1, it is characterized in that, include a power supply substrate, cutter is provided with one in order to put the glove groove of this light-emitting component in this power supply substrate, wherein this first electrode is electrically connected at one and is located at first conducting wire of power supply on the substrate by one first conductive lead wire, and second electrode then is electrically connected at another and is located at second conducting wire on the power supply substrate by second conductive lead wire.

13, light-emitting component as claimed in claim 12 is characterized in that, is provided with a photic zone that is located on this light-emitting component periphery in described this glove groove.

14, light-emitting component as claimed in claim 13 is characterized in that, is provided with one in described this photic zone and selects by a fluorescent substance, phosphorus and knockdown one of them made color converting layer thereof.

15, light-emitting component as claimed in claim 12 is characterized in that, is provided with a heat dissipating layer that is located on this light-emitting component periphery in described this glove groove.

16, light-emitting component as claimed in claim 12, it is characterized in that, described this power supply substrate be chosen as a pottery, glass, aluminium nitride, carborundum, aluminium oxide, epoxy resin, urea resin, plastic cement, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board (PCB), PC plate, containing metal compound and knockdown one of them.

17, light-emitting component as claimed in claim 12 is characterized in that, described this glove groove is to be chosen as a taper, circle and one of them annular aspect.

18, light-emitting component as claimed in claim 12 is characterized in that, the inner surface of described this glove groove is provided with a reflector layer.

19, light-emitting component as claimed in claim 1 is characterized in that, described this first extending flute is the peripheral position that is located on first electrode.

20, light-emitting component as claimed in claim 19 is characterized in that, is provided with at least one extension electrode in described this first extending flute, and each extension electrode is electrically connected with this first electrode by the surface electrode on a surface provided thereon.

21, light-emitting component as claimed in claim 1 is characterized in that, described this first electrode and second electrode are the vertical extent positions that covers the whole second material layer upper surface, and it is made to have the material of conduction and reflection function by one respectively.

22, light-emitting component as claimed in claim 1, it is characterized in that, described this first extending flute is the periphery that is located on this second material layer, and runs through the partial volume of first material layer, is provided with a groove separator and first extension electrode in first extending flute more in regular turn.

23, light-emitting component as claimed in claim 22 is characterized in that, described this first extension electrode is a ring lateral electrode.

24, light-emitting component as claimed in claim 22, it is characterized in that, described should the surface separator cutter be provided with one second extending flute, cause the exposed second material layer part upper surface, this second electrode then is fixedly arranged in second extending flute and other part upper surfaces of second material layer.

25, a kind of light-emitting component that improves the luminous zone of action is characterized in that it includes:

The one LED substrate of powering;

One epitaxial layer, include one first material layer and one second material layer, wherein first material layer is to be formed at this LED power supply upper surface of base plate, and second material layer is formed at this first material layer upper surface again, then includes a luminous zone between first material layer and second material layer naturally;

One second electrode is fixedly arranged on the part upper surface of this second material layer;

One first electrode is fixedly arranged on other part upper surfaces of this second material layer;

At least one extending flute is divided into the position below this first electrode, makes each extending flute run through second material layer and the first material layer partial volume, and is provided with at least one extension electrode that electrically connects with this first electrode in extending flute; And

At least one isolated groove is located between this first electrode and second electrode, and runs through second material layer and the first material layer partial volume.

26, light-emitting component as claimed in claim 25 is characterized in that, described this first electrode is with second electrode same horizontal level to be arranged.

27, light-emitting component as claimed in claim 25 is characterized in that, select between described this first material layer and first electrode to be provided with a transparent contact layer, ohmic contact layer, reflector layer and knockdown one of them.

28, light-emitting component as claimed in claim 25, it is characterized in that, include a power supply substrate, its upper surface is respectively equipped with one first conductive layer and second conductive layer, wherein first conductive layer is electrically connected with this first electrode by one first conductive projection, and second conductive layer is then electrically connected with this second electrode by one second conductive projection.

29, light-emitting component as claimed in claim 28, it is characterized in that, described this power supply substrate be chosen as a pottery, glass, aluminium nitride, carborundum, aluminium oxide, epoxy resin, urea resin, plastic cement, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board (PCB), PC plate, containing metal compound and knockdown one of them.

30, light-emitting component as claimed in claim 28 is characterized in that, described this light-emitting component is to be a flip-chip light-emitting diode.

31, light-emitting component as claimed in claim 25, it is characterized in that, include a power supply substrate, cutter is provided with one in order to put the glove groove of this light-emitting component in this power supply substrate, wherein this first electrode is electrically connected at one and is located at first conducting wire of power supply on the substrate by one first conductive lead wire, and second electrode then is electrically connected at another and is located at second conducting wire on the power supply substrate by second conductive lead wire.

32. light-emitting component as claimed in claim 25 is characterized in that, is provided with a separator in described this isolated groove.

33, light-emitting component as claimed in claim 25 is characterized in that, described this first electrode and second electrode are to cover the whole second material layer upper surface, and it is made to have the material of conduction and reflection function by one respectively.

34, light-emitting component as claimed in claim 25 is characterized in that, select between described this first material layer and second electrode to be provided with a transparent contact layer, ohmic contact layer, reflector layer and knockdown one of them.

35, light-emitting component as claimed in claim 25, it is characterized in that, described this LED power supply substrate be chosen as GaP power supply substrate, glass, sapphire, carborundum, gallium arsenide phosphide, zinc selenide, zinc sulphide, selenium zinc sulphide, quartz and knockdown one of them.

36, light-emitting component as claimed in claim 35 is characterized in that, described this epitaxial layer is that to be chosen as a ternary, quaternary and knockdown one of them material thereof made.

37, light-emitting component as claimed in claim 25 is characterized in that, described this extending flute is the periphery that is located on this second material layer, and runs through the partial volume of first material layer, is provided with this extension electrode in the extending flute again.

38, light-emitting component as claimed in claim 37 is characterized in that, described this extension electrode is a ring lateral electrode.

39, light-emitting component as claimed in claim 37, it is characterized in that, described this second material surface is provided with a surperficial separator, surface separator cutter is provided with one second extending flute, cause the exposed second material layer part upper surface, and this second electrode is fixedly arranged in second extending flute and other part upper surfaces of second material layer.

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