CN1314088C - Double pole transistor structure design of low start voltage gallium arsenide base new structure hetero junction - Google Patents
Double pole transistor structure design of low start voltage gallium arsenide base new structure hetero junction Download PDFInfo
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- CN1314088C CN1314088C CNB2003101108890A CN200310110889A CN1314088C CN 1314088 C CN1314088 C CN 1314088C CN B2003101108890 A CNB2003101108890 A CN B2003101108890A CN 200310110889 A CN200310110889 A CN 200310110889A CN 1314088 C CN1314088 C CN 1314088C
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- Prior art keywords
- gaas
- base
- bipolar transistor
- heterojunction bipolar
- low turn
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 79
- 125000005842 heteroatom Chemical group 0.000 title 1
- 229910052738 indium Inorganic materials 0.000 claims abstract description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 239000011574 phosphorus Substances 0.000 claims abstract description 4
- 230000000903 blocking effect Effects 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 description 38
- CLCPDSJUXHDRGX-UHFFFAOYSA-N 6-(1,3-dihydroxyisobutyl)thymine Chemical compound CC1=C(CC(CO)CO)NC(=O)NC1=O CLCPDSJUXHDRGX-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- -1 still Substances 0.000 description 1
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Abstract
The present invention relates to a structural design for a heterojunction bipolar transistor with a new structure of a gallium arsenide base having low starting voltage, which comprises a gallium arsenide substrate. The present invention comprises the following steps; one layer of heavily doped N-shaped gallium arsenide sub-collecting area grows on the substrate; a lightly doped N-shaped gallium arsenide collecting area is formed on the sub-collecting area; a heavily doped P-shaped indium, gallium, arsenic and stibium base area is formed on the collecting area; an indium, gallium and phosphorus emitting area is formed on the base area; a hat layer for ohmic contact is formed on the top layer.
Description
Technical field:
The invention belongs to the semiconductor microactuator electronics, the microwave device field is meant the GaAs based heterojunction bipolar transistor of a kind of low turn-on voltage especially.
Background technology:
The development trend of portable electric appts (for example mobile phone) is that the use that prolongs battery is received a mandate and do not reduced its performance.This low power consumption that is applied in components and parts in this equipment of will begging to surrender that is to say the cut-in voltage V that will reduce them
OnThe cut-in voltage of indium phosphide (InP) base heterojunction bipolar transistor (HBT) considers that from aspect of performance it is optimal selection less than 0.5V.But the size of InP substrate, expensive, fragility have limited its extensive, low-cost production.Therefore, the basic HBT of development GaAs (GaAs) makes it to be applicable to that low pressure, low-power consumption application are very important.
Indium gallium phosphorus (InGaP)/GaAs (GaAs) HBT has very high reliability, but a fly in the ointment is its V
OnGreatly, this makes that its power consumption is big and has limited its application aspect low-power consumption.Reduce V
On, it is had in low-power consumption, the potentiality of using in the portable set.Reduce the energy gap of base material, can make V
OnValue reduce.
In GaAs base HBT, the base material that is used for low turn-on voltage mainly contains indium gallium arsenic nitrogen (In at present
xGa
1-xAs
yN
1-y) and gallium arsenic antimony (GaAs
ySb
1-y) two kinds.In
0.03Ga
0.97As
0.99N
0.01The lattice match of material and GaAs material, still, base In
0.03Ga
0.97As
0.99N
0.01There is big conduction band discontinuity (as shown in Figure 1) between material and the collecting region GaAs material, this makes the BC surplus of HBT at the electronics blocking effect, cause the time lengthening of electronics in the base, the frequency characteristic of device reduces, and the blocking effect of BC knot electronics also makes the current gain of HBT reduce simultaneously.Although can overcome this shortcoming at the BC knot with the content gradually variational layer, it has brought difficulty for the design and the preparation of device.
If the base is changed into the GaAs of low energy gap
0.92Sb
0.08Material just can be avoided the generation (as shown in Figure 2) of BC knot electronics blocking effect, also can reach simultaneously to reduce cut-in voltage V
OnPurpose.But GaAs
0.92Sb
0.08And In
0.03Ga
0.97As
0.99N
0.01The shortcoming of material is that electron mobility is less, and this makes that its base resistance is bigger, and frequency characteristic also is restricted.
In order to overcome above-mentioned shortcoming, the present invention proposes a kind of new GaAs base HBT structure.Its purpose is when reducing GaAs base HBT cut-in voltage, to overcome GaAs
ySb
1-yThe low deficiency that waits of material electronics mobility.
Summary of the invention:
At GaAs
ySb
1-yProblems such as the material electronics mobility is low on the basis of the physical property of having furtherd investigate the III-V group iii v compound semiconductor material, band structure, are chosen indium gallium arsenic antimony (In
xGa
1-xAs
ySb
1-y) material is as the base of GaAs base HBT, the GaAs material is a collecting region, and the InGaP material is the emitter region, and the profile of its device is as shown in Figure 3.The present invention proposes two kinds of new GaAs HBT device architectures.
Base GaAs
ySb
1-yMix in the material after an amount of indium (In), can improve the electron mobility of material, therefore can improve the frequency characteristic of device.The electron mobility of material increases along with the increase of In component, and still, its conduction band energy reduces along with the increase of In component.Control In
xGa
1-xAs
ySb
1-yThe content of In makes In in the material
xGa
1-xAs
ySb
1-yHeight at the bottom of the material conduction band is not less than the height at the bottom of the GaAs material conduction band, so both can guarantee that there is not the electronics blocking effect in the BC knot of this new construction HBT, also can make device that lower cut-in voltage V is arranged
On, the while can be improved the electron mobility of its base material again.
In
xGa
1-xAs
ySb
1-yTherefore the energy gap of material, can reduce the cut-in voltage V of GaAs base HBT less than the GaAs material
On
The GaAs base HBT of this new construction, there is not the electronics blocking effect in the BC knot, than conventional GaAs HBT lower cut-in voltage is arranged, simultaneously its base In
xGa
1-xAs
ySb
1-yThe electron mobility of material is again than GaAs
ySb
1-yThe height of material, therefore, it compares GaAs/GaAs
ySb
1-yHBT has more superior direct current and microwave property.
The technical solution of the present invention main points are as follows: the GaAs based heterojunction bipolar transistor of a kind of low turn-on voltage is characterized in that the GaAs based heterojunction bipolar transistor of this low turn-on voltage comprises:
---semi-insulating GaAs substrate;
---N
+The sub-collecting region of GaAs that mixes, this N
+The sub-collecting region of GaAs that mixes is grown on the described semi-insulating GaAs substrate;
It on---this sub-collecting region lightly doped N p type gallium arensidep collecting region;
The doped P-type indium gallium arsenic antimony base of attaching most importance on---this collecting region;
It on---this base indium gallium phosphorus emitter region;
---topmost one deck is the cap layer of using as ohmic contact.
Description of drawings:
Fig. 1: GaAs/In
xGa
1-xAs
yN
1-y/ GaAs HBT band structure schematic diagram
Fig. 2: GaAs/GaAs
ySb
1-yHBT band structure schematic diagram
Fig. 3: InGaP/In
xGa
1-xAs
ySb
1-y/ GaAs DHBT profile
Fig. 4: the constant InGaP/In of base material component
xGa
1-xAs
ySb
1-y/ GaAs DHBT band structure schematic diagram
Fig. 5: the InGaP/In of base material component gradual change
xGa
1-xAs
ySb
1-y/ GaAs DHBT band structure schematic diagram
Embodiment:
The present invention can realize with following two kinds of device architectures.
First kind of device architecture: the constant InGaP/In of base material component
xGa
1-xAs
ySb
1-y/ GaAs DHBT
The fixedly In of component of base
xGa
1-xAs
ySb
1-yDuring material, its device architecture is: the sub-collecting region 2 of one deck heavily doped N type GaAs of at first growing on the semi-insulating substrate 1 of GaAs; It on sub-collecting region lightly doped N type GaAs collecting region 3; And then the heavily doped P type of growth one deck In
xGa
1-xAs
ySb
1-y4 as the base, and wherein the value of x, y immobilizes; It above the base InGaP emitter region 5; Topmost one deck is the heavily doped cap layer N that uses as ohmic contact
+-GaAs and N
+-In
xGa
1-xAs layer 6.Its layers of material and doping type are as shown in table 1.
The constant InGaP/In of table 1 base material component
xGa
1-xs
ySb
1-y/ GaAs DHBT structure
| Layer | Material | Doping type |
| 6 cap layers | In xGa 1-xAs | N + |
| GaAs | N + | |
| 5 emitter regions | InGaP | N |
| 4 bases | In xGa 1-xAs ySb 1-y | P + |
| 3 collecting regions | GaAs | N - |
| 2 sub-collecting regions | GaAs | N + |
| 1 substrate | S.I.GaAs |
Wherein, N represents that the N type mixes, and P represents that the P type mixes, "+" number expression heavy doping, "-" number expression light dope
In said structure, at first choose the content x of In, the principle of choosing is that the BC knot is controlled in the scope that does not have the electronics blocking effect, its band structure schematic diagram is as shown in Figure 4.
Second kind of device architecture: the InGaP/In of base material component gradual change
xGa
1-xAs
ySb
1-y/ GaAs DHBT structure
Edge, emitter region from device increases base In gradually
xGa
1-xAs
ySb
1-yThe content of In in the material reduces the content of Sb simultaneously, can obtain the InGaP/In of base material component gradual change
xGa
1-xAs
ySb
1-y/ GaAsDHBT structure.After the base mixes In, conduction band energy is reduced, the content of In increases gradually, causes the conduction band energy of base to reduce gradually, as shown in Figure 5.Reducing gradually of the conduction band energy of base makes the base form the electric field that an accelerated electron moves.The existence of this electric field makes Base Transit Time by τ
B=qX
B 2/ 2kT μ
nBecome τ
B=f (κ) qX
B 2/ 2kT μ
n, wherein, f (κ)=2/ κ (1-1/ κ+(1/ κ) e
-k), κ=Δ E
g/ kT, Δ E
gPoor for being with of emitter region and the terminal base of collecting region, q is the electric weight of electron institute band, and k is a Boltzmann constant, and T is an absolute temperature, X
BBe base width, μ
nBe electron mobility.When κ → 0, f (κ) → 1.From this formula as can be seen, during the conduction band energy gradual change of base, the Base Transit Time of electronics can further reduce, and the frequency characteristic of device also can further improve.
The InGaP/In of table 2 base material component gradual change
xGa
1-xAs
ySb
1-y/ GaAs DHBT structure
| 6 cap layers | In xGa 1-xAs | N + |
| GaAs | N + | |
| 5 emitter regions | InGaP | N |
| 4 bases | Little In xGa 1-xAs ySb 1-yX ↓ big | P + |
| 3 collecting regions | GaAs | N - |
| 2 sub-collecting regions | GaAs | N + |
| 1 substrate | S.I.GaAs |
Wherein, N represents that the N type mixes, and P represents that the P type mixes, "+" number expression heavy doping, "-" number expression light dope.
Table 2 has provided the InGaP/In of this structure
xGa
1-xAs
ySb
1-yIts layers of material of/GaAs DHBT and doping type.They are: the sub-collecting region 2 of heavily doped N type GaAs of one deck and the GaAs lattice match of at first growing on the semi-insulating substrate 1 of GaAs; It on sub-collecting region lightly doped N type GaAs collecting region 3; And then the heavily doped P type of growth one deck In
xGa
1-xAs
ySb
1-yMaterial is as base 4, and wherein the value of x reduces gradually, and y then increases gradually.It above the base InGaP emitter region 5; Topmost one deck is the heavily doped cap layer N that uses as ohmic contact
+-GaAs and N
+-In
xGa
1-xAs layer 6.
Claims (7)
1, the GaAs based heterojunction bipolar transistor of a kind of low turn-on voltage is characterized in that, the structure of device comprises:
---semi-insulating GaAs substrate;
---N
+The sub-collecting region of GaAs that mixes, this N
+The sub-collecting region of GaAs that mixes is grown on the semi-insulating GaAs substrate;
It on---this sub-collecting region lightly doped N p type gallium arensidep collecting region;
The doped P-type indium gallium arsenic antimony base of attaching most importance on---this collecting region;
It on---this base indium gallium phosphorus emitter region;
---topmost one deck is the cap layer of using as ohmic contact.
2, the GaAs based heterojunction bipolar transistor of a kind of low turn-on voltage according to claim 1 is characterized in that, wherein makes collector electrode on sub-collecting region.
3, the GaAs based heterojunction bipolar transistor of a kind of low turn-on voltage according to claim 1 is characterized in that, wherein makes base stage on the base.
4, the GaAs based heterojunction bipolar transistor of a kind of low turn-on voltage according to claim 1 is characterized in that, wherein makes emitter on the cap layer.
5, the GaAs based heterojunction bipolar transistor of low turn-on voltage according to claim 1 is characterized in that: described P type indium gallium arsenic antimony base composition is In
xGa
1-xAs
ySb
1-y, described x, described y are controlled at the BC knot that makes described low turn-on voltage bipolar transistor and do not exist in the scope of electronics blocking effect.
6, the GaAs based heterojunction bipolar transistor of low turn-on voltage according to claim 5 is characterized in that: described x, described y immobilizes.
7, the GaAs based heterojunction bipolar transistor of low turn-on voltage according to claim 5 is characterized in that: wherein said x begins to increase gradually to the collector region edge from the edge, emitter region, and described y begins to reduce gradually to the collector region edge from the edge, emitter region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101108890A CN1314088C (en) | 2003-11-10 | 2003-11-10 | Double pole transistor structure design of low start voltage gallium arsenide base new structure hetero junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101108890A CN1314088C (en) | 2003-11-10 | 2003-11-10 | Double pole transistor structure design of low start voltage gallium arsenide base new structure hetero junction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1617313A CN1617313A (en) | 2005-05-18 |
| CN1314088C true CN1314088C (en) | 2007-05-02 |
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|---|---|---|---|
| CNB2003101108890A Expired - Fee Related CN1314088C (en) | 2003-11-10 | 2003-11-10 | Double pole transistor structure design of low start voltage gallium arsenide base new structure hetero junction |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362158A (en) * | 2014-10-11 | 2015-02-18 | 北京工业大学 | Long wavelength GaAs based MSM and HBT (heterojunction bipolar transistor) monolithic-integrated optical detector |
| CN105070751B (en) * | 2015-08-18 | 2017-11-10 | 成都海威华芯科技有限公司 | GaAs HBT devices |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4623907A (en) * | 1983-10-19 | 1986-11-18 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device |
| JP2000138403A (en) * | 1998-08-28 | 2000-05-16 | Asahi Chem Ind Co Ltd | Thin film magnetic sensor |
| WO2001009957A1 (en) * | 1999-07-30 | 2001-02-08 | Hrl Laboratories, Llc | Inp collector ingaassb base dhbt device and method of forming the same |
| CN1344031A (en) * | 2000-09-13 | 2002-04-10 | 株式会社东芝 | Bipolar transistor, semiconductor light emitting element and semiconductor element |
| WO2003009368A2 (en) * | 2001-07-20 | 2003-01-30 | Microlink Devices, Inc. | Low emitter resistance contacts to gaas high speed hbt |
-
2003
- 2003-11-10 CN CNB2003101108890A patent/CN1314088C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4623907A (en) * | 1983-10-19 | 1986-11-18 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device |
| JP2000138403A (en) * | 1998-08-28 | 2000-05-16 | Asahi Chem Ind Co Ltd | Thin film magnetic sensor |
| WO2001009957A1 (en) * | 1999-07-30 | 2001-02-08 | Hrl Laboratories, Llc | Inp collector ingaassb base dhbt device and method of forming the same |
| CN1344031A (en) * | 2000-09-13 | 2002-04-10 | 株式会社东芝 | Bipolar transistor, semiconductor light emitting element and semiconductor element |
| WO2003009368A2 (en) * | 2001-07-20 | 2003-01-30 | Microlink Devices, Inc. | Low emitter resistance contacts to gaas high speed hbt |
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| Publication number | Publication date |
|---|---|
| CN1617313A (en) | 2005-05-18 |
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