CN1313867C - Combination equipment for manufacturing insulating films for thin film transistor liquid crystal displays - Google Patents

Abstract

An assembly apparatus for manufacturing the insulating film of TFT-LCD is composed of a chemical vapor deposition unit, a cleaning chamber, a wafer boat station, and a transfer system for transferring substrate to said units. After the substrate enters the chemical vapor deposition device from the wafer boat station through the transfer system, a first deposition is performed to deposit an insulation film with a thickness about half of a predetermined thickness, and then the substrate enters the cleaning chamber through the transfer system to be cleaned by a wet cleaning method to remove particles in the insulation film. Then, the film enters the chemical vapor deposition device from the transfer system for second deposition to complement the insulating film with the preset thickness.

Description

Combination equipment for manufacturing insulating films for thin film transistor liquid crystal displays

technical field

The present invention relates to a semiconductor manufacturing process device, and in particular to a combined device for manufacturing insulating film (insulating film) of a thin film transistor (thin film transistor, TFT for short) liquid crystal display (LCD for short).

Background technique

In recent years, thin film transistors have been used in various semiconductor devices, especially liquid crystal displays. Due to the characteristics of low-voltage operation, no radiation scattering, light weight, and small size, liquid crystal displays have become one of the most important displays under the rapid growth of mobile information equipment.

Therefore, the improvement of the manufacturing process of thin film transistor liquid crystal display has become one of the key points of development in all walks of life at present. An insulating film with a predetermined thickness is deposited on the substrate. However, the formed insulating film often has the problem of particles remaining, which will cause short circuits between different layers or component failures, resulting in a decrease in yield. Even if the substrate goes through a cleaning step after deposition, there will still be particles remaining in the insulating film, and in order to remove the particles more thoroughly, it may cause pinholes (pinholes) on the insulating film, or for the removal of particles by the automatic handling vehicle. (auto guide vehicle, referred to as AGV) or manual transfer vehicle (manual guide vehicle, referred to as MGV) moves the substrate between each device, causing it to be polluted by the environment.

Contents of the invention

Therefore, the object of the present invention is to provide a combined device for manufacturing insulating films of thin film transistor liquid crystal displays, so as to reduce residual particles in the insulating films.

Another object of the present invention is to provide an assembly device for manufacturing insulating films of TFT-LCDs, so as to prevent short circuits between different layers or component failures.

Another object of the present invention is to provide an assembly device for manufacturing an insulating film of a thin film transistor liquid crystal display, so as to improve the yield of the process.

Another object of the present invention is to provide a combined device for manufacturing insulating films of thin film transistor liquid crystal displays, which can shorten the transfer time of substrates before and after cleaning.

Another object of the present invention is to provide a combined device for manufacturing insulating films of TFT-LCDs, so as to reduce the chance of the substrate being polluted by the environment.

According to the above and other purposes, the present invention proposes a combination device for manufacturing an insulating film of a thin film transistor liquid crystal display (TFT-LCD), which is suitable for depositing an insulating film on a substrate, and is characterized in that it includes: a wafer station (cassette station); a chemical vapor deposition device, relative to the crystal boat station; a transfer system (transfer system) located between the crystal boat station and the chemical vapor deposition device, for transferring the substrate; and a cleaning chamber (cleaner) , adjacent to the transfer system.

Wherein the chemical vapor deposition device includes a cavity for performing a plasma enhanced chemical vapor deposition method.

Wherein the cleaning chamber includes a cleaning device.

Wherein the cleaning device comprises a scrubbing machine.

Wherein the transfer system includes a mechanical arm.

Wherein the boat station has a plurality of boats for carrying the substrate.

The present invention is a method for manufacturing an insulating thin film of a thin film transistor liquid crystal display, which is suitable for depositing an insulating layer of a first thickness using a combination device, the combination device comprising a crystal boat station; a chemical vapor phase relative to the crystal boat station a deposition device; a transfer system located between the wafer station and the chemical vapor deposition device; and a cleaning chamber adjacent to the transfer system, characterized in that the steps include:

providing a substrate placed in the wafer station;

using the transfer system to move the substrate from the boat station into the chemical vapor deposition apparatus;

performing a first deposition process to deposit a second thickness of the insulating layer on the substrate, wherein the second thickness is smaller than the first thickness;

moving the substrate from the chemical vapor deposition apparatus into the cleaning chamber using the transfer system;

performing a cleaning process to remove residual particles on the substrate;

using the transfer system to move the substrate from the cleaning chamber into the chemical vapor deposition apparatus; and

performing a second deposition process to deposit a third thickness of the insulating layer on the substrate, wherein the third thickness plus the thickness of the insulating layer after the cleaning process is equal to the first thickness.

The step of performing the first deposition process includes plasma-enhanced chemical vapor deposition.

The step of performing the second deposition process includes plasma-enhanced chemical vapor deposition.

Wherein the second thickness is half of the first thickness.

The step of performing the cleaning process includes performing a wet cleaning.

Wherein the wet cleaning includes water column washing.

Wherein the wet cleaning includes brushing.

Another method for manufacturing an insulating thin film of a thin film transistor liquid crystal display of the present invention is suitable for depositing an insulating layer with a fixed thickness using a combined device, the combined device includes a crystal boat station; a chemical vapor phase relative to the crystal boat station a deposition device; a transfer system located between the wafer station and the chemical vapor deposition device; and a cleaning chamber adjacent to the transfer system, characterized in that the steps include:

a. providing a substrate placed in the wafer station;

b. using the transfer system to move the substrate into the chemical vapor deposition device;

c. performing a deposition process to deposit the insulating layer on the substrate, wherein the thickness of the insulating layer is less than the fixed thickness;

d. using the transfer system to move the substrate from the chemical vapor deposition device into the cleaning chamber;

e. performing a cleaning process to remove residual particles on the substrate; and

f. Repeat steps b to e until the total thickness of the insulating layer is equal to the fixed thickness.

The step of performing the deposition process includes plasma enhanced chemical vapor deposition.

The step of performing the cleaning process includes performing a wet cleaning.

Wherein the wet cleaning includes water column washing.

Wherein the wet cleaning includes brushing.

In addition, because the combined equipment of the present invention integrates the chemical vapor deposition device and the cleaning chamber, that is, uses the same wafer station interface, it can shorten the substrate transfer time before and after cleaning, and reduce the chance of known substrates being polluted by the environment.

Description of drawings

In order to make the above-mentioned and other objects, features and advantages of the present invention more comprehensible, a preferred embodiment is specifically cited below, together with the accompanying drawings, and described in detail as follows, wherein:

FIG. 1 is a schematic diagram of an assembly device for manufacturing an insulating film of a thin film transistor liquid crystal display according to a preferred embodiment of the present invention.

Detailed ways

The invention is a combined device for manufacturing insulating film (insulating film) of a thin film transistor (TFT) liquid crystal display (LCD for short), mainly integrating chemical vapor deposition (chemical vapor deposition, CVD for short) ) device and the cleaning chamber (cleaner) cavity in the same combination equipment.

Please refer to Fig. 1, the combined equipment 100 of the insulating thin film of manufacturing thin film transistor liquid crystal display is made up of a chemical vapor deposition device 106, a cleaning chamber 108, a crystal boat station (cassette station) 102 and in order to convey substrate 112 to above-mentioned each parts A transfer system (transfer system) 110 is combined, wherein the chemical vapor deposition device 106 mainly includes a chemical vapor deposition chamber (CVD chamber) such as performing plasma enhanced chemical vapor deposition (plasma enhanced CVD, PECVD for short) ) cavity, temperature control system, gas pipeline system, pressure control system, radio frequency (radio frequency, referred to as RF) generator, etc.; and the cleaning chamber 108 includes a cleaning device (cleaning equipment) such as a scrubber (scrubber); The transfer system 110 includes, for example, a robot 114 for transferring the substrate 112 ; and the wafer boat station 102 has several wafer boats 104 . In the present invention, the configuration of each component is that the chemical vapor deposition device 106 is relative to the wafer station 104 , the transfer system 110 is located between the wafer station 104 and the chemical vapor deposition device 106 , and the cleaning chamber 108 is adjacent to the transfer system 110 .

When the above-mentioned combination equipment of the present invention is applied to the deposition process of an insulating film, the substrate (not shown) placed in the wafer boat 104 is first moved from the wafer boat station 102 to the chemical vapor deposition device 106 relative to the wafer boat station 102 Inside, a transfer system 110 located between the wafer boat station 102 and the chemical vapor deposition apparatus 106 is used to transfer the substrate 112 .

Subsequently, the first deposition is performed using the chemical vapor deposition device 106 to deposit an insulating film with a predetermined thickness of about half, or thicker or thinner, on the substrate, wherein the deposition process performed by the chemical vapor deposition device 106 is, for example, a plasma Enhanced chemical vapor deposition (plasma enhanced CVD, referred to as PECVD).

Then, use the transfer system 110 to remove the substrate from the chemical vapor deposition device 106, and then send it into a cleaning chamber 108 adjacent to the transfer system 110 for wet cleaning (wetcleaning) to remove residual particles in or on the insulating film. , wherein the wet cleaning is, for example, physical cleaning, such as water column washing or scrubbing. Since the cleaning of the particles will produce pinholes (pinholes) on the insulating layer, the substrate after cleaning will then be transported into the chemical vapor deposition device 106 by the transfer system 110 for the second deposition to fill up the first deposition. The resulting pinholes are filled with an insulating film of predetermined thickness. Since it is almost impossible for the particle positions of the insulating film deposited twice to fall on the same position, even if there are particles, the insulating film strength of the position can be compensated by another deposited insulating film, thereby improving the yield. Finally, the substrate that has completed the deposition process can be transferred to the wafer boat station 102 by the transfer system 110 for subsequent processes.

In summary, the features of the present invention include:

1. The present invention divides the insulating layer to be deposited into two depositions, so the wet cleaning performed after the first deposition can remove particles in or on the insulating film deposited for the first time. Reduce the residual particles in the insulating film, prevent the occurrence of short circuits between different layers or the failure of components.

2. In the present invention, the pinholes produced on the insulating layer after cleaning can be filled after the second deposition. Since the particles of the insulating film deposited twice are almost impossible to fall on the same position, even if there are particles, they can be filled. The strength of the insulating film at this position is compensated by another deposited insulating film, thereby improving the yield.

3. The combined equipment of the present invention can shorten the substrate transfer time before and after cleaning because the chemical vapor deposition device and the cleaning chamber are integrated, that is, the same wafer station interface is used.

4. Since the combined equipment of the present invention uses the same wafer station interface, it is possible to reduce the number of substrates that are known to be moved between devices by an automatic guide vehicle (AGV) or a manual guide vehicle (MGV). And make it the opportunity to be polluted by the environment.

Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Anyone familiar with this art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore The scope of protection of the present invention should be defined by the scope of the appended patent application.

Claims (18)

1. A combined device for manufacturing an insulating film of a thin film transistor liquid crystal display, suitable for depositing an insulating film on a substrate, characterized in that it comprises: Yijingzhou Station; a chemical vapor deposition apparatus, relative to the wafer station; a transfer system located between the boat station and the chemical vapor deposition apparatus for transferring the substrate; and A cleaning chamber is adjacent to the transfer system. 2 . The combined device for manufacturing an insulating film of a TFT-LCD as claimed in claim 1 , wherein the chemical vapor deposition device comprises a chamber for performing a plasma-enhanced chemical vapor deposition method. 3 . 3 . The combined equipment for manufacturing insulating films of TFT-LCDs as claimed in claim 1 , wherein the cleaning chamber includes a cleaning device. 4 . 4. The combined equipment for manufacturing insulating films of TFT-LCDs as claimed in claim 3, wherein the cleaning device comprises a scrubbing machine. 5 . The combined equipment for manufacturing insulating films of TFT-LCDs as claimed in claim 1 , wherein the transferring system comprises a robot arm. 6 . 6 . The combined device for manufacturing insulating films of TFT-LCDs as claimed in claim 1 , wherein the wafer boat station has a plurality of wafer boats for carrying the substrate. 7 . 7. A method for manufacturing an insulating thin film of a thin film transistor liquid crystal display, suitable for depositing an insulating layer of a first thickness using a combined device, the combined device comprising a crystal boat station; a chemical vapor phase relative to the crystal boat station a deposition device; a transfer system located between the wafer station and the chemical vapor deposition device; and a cleaning chamber adjacent to the transfer system, characterized in that the steps include: providing a substrate placed in the wafer station; using the transfer system to move the substrate from the boat station into the chemical vapor deposition apparatus; performing a first deposition process to deposit a second thickness of the insulating layer on the substrate, wherein the second thickness is smaller than the first thickness; moving the substrate from the chemical vapor deposition apparatus into the cleaning chamber using the transfer system; performing a cleaning process to remove residual particles on the substrate; using the transfer system to move the substrate from the cleaning chamber into the chemical vapor deposition apparatus; and performing a second deposition process to deposit a third thickness of the insulating layer on the substrate, wherein the third thickness plus the thickness of the insulating layer after the cleaning process is equal to the first thickness. 8. The method for manufacturing an insulating film of a thin film transistor liquid crystal display as claimed in claim 7, wherein the step of performing the first deposition process comprises a plasma enhanced chemical vapor deposition method. 9. The method for manufacturing an insulating film of a thin film transistor liquid crystal display as claimed in claim 7, wherein the step of performing the second deposition process comprises a plasma-enhanced chemical vapor deposition method. 10. The method for manufacturing an insulating film of a thin film transistor liquid crystal display as claimed in claim 7, wherein the second thickness is half of the first thickness. 11. The method for manufacturing an insulating film of a thin film transistor liquid crystal display as claimed in claim 7, wherein the step of performing the cleaning process comprises performing a wet cleaning. 12. The method for manufacturing an insulating film of a thin film transistor liquid crystal display as claimed in claim 11, wherein the wet cleaning comprises water column rinsing. 13. The method for manufacturing an insulating film of a thin film transistor liquid crystal display as claimed in claim 11, wherein the wet cleaning comprises brush cleaning. 14. A method for manufacturing an insulating thin film of a thin film transistor liquid crystal display, suitable for depositing an insulating layer of a fixed thickness using a combined device, the combined device comprising a wafer station; a chemical vapor deposition process relative to the wafer station device; a transfer system located between the wafer station and the chemical vapor deposition device; and a cleaning chamber adjacent to the transfer system, characterized in that the steps include: a. providing a substrate placed in the wafer station; b. using the transfer system to move the substrate into the chemical vapor deposition device; c. performing a deposition process to deposit the insulating layer on the substrate, wherein the thickness of the insulating layer is less than the fixed thickness; d. using the transfer system to move the substrate from the chemical vapor deposition device into the cleaning chamber; e. performing a cleaning process to remove residual particles on the substrate; and f. Repeat steps b to e until the total thickness of the insulating layer is equal to the fixed thickness. 15. The method for manufacturing an insulating film of a thin film transistor liquid crystal display as claimed in claim 14, wherein the step of performing the deposition process comprises a plasma-enhanced chemical vapor deposition method. 16. The method for manufacturing an insulating film of a thin film transistor liquid crystal display as claimed in claim 14, wherein the step of performing the cleaning process comprises performing a wet cleaning. 17. The method for manufacturing an insulating film of a thin film transistor liquid crystal display as claimed in claim 14, wherein the wet cleaning comprises water column rinsing. 18. The method for manufacturing an insulating film of a thin film transistor liquid crystal display as claimed in claim 14, wherein the wet cleaning comprises brush cleaning.