CN1310739C - Technique for manufacturing batch size of monocrystal chip of yttrium vanadic acid - Google Patents
Technique for manufacturing batch size of monocrystal chip of yttrium vanadic acid Download PDFInfo
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- CN1310739C CN1310739C CNB021328935A CN02132893A CN1310739C CN 1310739 C CN1310739 C CN 1310739C CN B021328935 A CNB021328935 A CN B021328935A CN 02132893 A CN02132893 A CN 02132893A CN 1310739 C CN1310739 C CN 1310739C
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- yttrium
- vanadic acid
- single crystal
- yttrium vanadate
- wafers
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 title claims description 73
- 229910052727 yttrium Inorganic materials 0.000 title claims description 73
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 title claims description 73
- 239000013078 crystal Substances 0.000 claims abstract description 46
- 238000005498 polishing Methods 0.000 claims abstract description 40
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000011521 glass Substances 0.000 claims abstract description 19
- 238000005520 cutting process Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000012530 fluid Substances 0.000 claims description 17
- 239000010432 diamond Substances 0.000 claims description 10
- 229910003460 diamond Inorganic materials 0.000 claims description 10
- 239000000428 dust Substances 0.000 claims description 10
- 239000011734 sodium Substances 0.000 claims description 10
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 9
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 9
- 230000001105 regulatory effect Effects 0.000 claims description 9
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000010437 gem Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 239000004576 sand Substances 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001651 emery Inorganic materials 0.000 abstract 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000013307 optical fiber Substances 0.000 description 6
- 239000002075 main ingredient Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000003672 processing method Methods 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
Landscapes
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
The present invention relates to a batch processing technique for yttrium vanadate single wafers. An X-ray orienting device can orient yttrium vanadate single crystal material which is fixed by wax, and a cutting machine is used to cut orient yttrium vanadate single crystal material to form yttrium vanadate wafers. Glass strips of which the thickness is narrower than the thickness of the yttrium vanadate single wafer are selected, the wafers and the glass strips to be arranged on a disc are uniformly coated with wax, the glass strips are placed into a plurality of small lattices, and the wafers are arranged in the small lattices. A grinding stick can slide in slots among the wafers, emery of W20 is used for coarse grinding on two-shaft machines or four-shaft machines, emery of W7 is used for fine grinding, and then the wafers are polished. Cerium dioxide is used for first polishing, and 14 to 16% of SiO2, 0.3% of Na, 0.01% of other impurities and water are used as polishing liquid for fine polishing. The present invention forms integral disc arrangement and integral chamfering, solves chamfering problems, greatly reduces product cost and greatly improves production quality and production efficiency.
Description
Technical field: the technique for manufacturing batch of size of monocrystal chip of yttrium vanadic acid is the processing method to size of monocrystal chip of yttrium vanadic acid cutting, lead angle, grinding, polishing.
Background technology: yttrium vanadate crystal YVO
4It is positive uniaxial crystal with Czochralski grown.It compares CaCO
3And LiNbO
3Higher refractive index (Δ N=0.22,0.63-1.30 μ m) is arranged, and it has wideer transparency range.YVO
4Compare LiNbO
3Better mechanical performance is arranged.It has hot property and well physics, chemical stability preferably, so YVO
4Crystal is an ideal material of making ultraviolet-visible-infrared light polarizer element.YVO
4Be widely used, particularly in optical-fibre communications, it can make more miniaturization of optical element.YVO
4Be extensive use of in optical-fibre communications, so require the element that processes little, could satisfy optical element to the demand of miniaturization development more, the converted products that requires often is the cuboid of 2 * 3 * 7m now, even littler.
Existing processing method is to give earlier yttrium vanadate single crystal accurately directed and to the dicing of yttrium vanadate single crystal, size of monocrystal chip of yttrium vanadic acid is carried out chamfering, go up dish again and size of monocrystal chip of yttrium vanadic acid is carried out single face grinds and polishing, go up dish after turning over again and another side is carried out single face grinds and polishing.Processing method all adopts the monolithic chamfering, because it is little cuboid, too for a short time being not easy arrested, cuboid has eight limits to need chamfering, so time-consuming, effort, the utmost point is not allowed to be easy to do, and the limited amount of processing can not satisfy market, and the cutting expense of processing yttrium vanadate single crystal is higher.
Summary of the invention: purpose of the present invention will solve yttrium vanadate single crystal exactly, and to be slit into sheet, grinding and polishing longer process time, and working (machining) efficiency is low, has particularly solved the problem of chamfering difficulty.Provide a kind of and can reduce product cost significantly, improve the size of monocrystal chip of yttrium vanadic acid technique for manufacturing batch of production efficiency of products greatly.
The technique for manufacturing batch of size of monocrystal chip of yttrium vanadic acid of the present invention:
The first step: give yttrium vanadate single crystal accurately directed.Select the yttrium vanadate single crystal material for use, ask the vanadic acid yttrium is carried out orientation.During with the X-ray orientation device orientation, earlier with calibrated bolck zeroing, the crystal orientation of measuring yttrium vanadate single crystal then.
Second step: the cutting of yttrium vanadate single crystal.With wax reserve to the vanadic acid yttrium fix, vertically when the plane, reverberation can turn back to the cut direction that the principle of former luminous point is regulated cutting machine according to light.After fixing and regulating, cut out the wafer profile of vanadic acid yttrium accurately with cutting machine.
The 3rd step: in order to put in order the dish chamfering in batches, must some auxiliary jig.Be narrower than the glass bar of size of monocrystal chip of yttrium vanadic acid thickness with some.The vanadic acid yttrium wafer that will go up dish and glass bar evenly be coated with wax, put into many lattices, then vanadic acid yttrium wafer is put into lattice with glass bar, compress at last, put neat, fix.Go up the size of monocrystal chip of yttrium vanadic acid that dish obtains arranging like this, row is with perpendicular all very neat, between row and the row and between perpendicular and perpendicular a lot of ditches is arranged again, slide in ditch with frotton, size of monocrystal chip of yttrium vanadic acid is carried out chamfering fast, coil chamfering as can in ditch, sliding and put in order with a corresponding roundlet gem stick.Whole dish chamfering not only can realize producing in batches, and when having solved special little crystal block chamfering, with the bad problem of taking of hand.During because of process finishing, customer requirement leaves 0.1mm left and right sides chamfering surplus, so will calculate processing capacity, comes chamfering by processing capacity and the total amount that leaves surplus.
The 4th step: the grinding of vanadic acid yttrium.We adopt the diamond dust of W20, on two machines or four machines the vanadic acid yttrium are roughly ground.When appearance and size near the time, corase grind finishes.Adopt the diamond dust of W7 to finish grind.Because the vanadic acid yttrium is used in the optical-fibre communications mostly, so require very high to the depth of parallelism.We also necessarily will get well at the depth of parallelism when correct grinding, otherwise can not obtain the very high depth of parallelism after polishing.We bring the good vanadic acid yttrium of correct grinding and use miking, and its whole dish deviation must be less than 0.001mm.
The 5th step: the polishing of vanadic acid yttrium wafer.We carry out just throwing with cerium oxide earlier on two machines or four machines.Because the hardness of vanadic acid yttrium is not high relatively, so very fast with the speed of cerium oxide polishing.By jettisoning, after face shape etc. reaches requirement substantially, adopt the T.S.E2040 polishing fluid to carry out finishing polish to sand holes.The Main Ingredients and Appearance of T.S.E2040 polishing fluid is:
SiO
2Content percentage by weight: 14---16%;
Sodium (Na) weight content: 0.3%;
Other impurity weight content: 0.01%;
Its surplus is a water.
SiO wherein
2Particle mean size (nm): 40---70;
Polishing fluid pH value: 10.7---11.2.
We are contained SiO in the T.S.E2040 polishing fluid as can be seen
2Average grain diameter very little, so with its polishing the surface roughness of yttrium vanadate crystal is worked into better at last.
Throw good after, with blade the cerograph that is used for fixing is fallen, lower wall turns over vanadic acid yttrium cuboid then and goes up dish, goes on foot the 5th by the 3rd and goes on foot and do, and obtains the size of monocrystal chip of yttrium vanadic acid that processes at last.
The present invention has adopted dish on the whole, and the way of whole chamfering has solved a chamfering difficult problem.The breakthrough of this technological core technology can reduce the production cost significantly, improves production efficient greatly, has improved the competitiveness of product in market; Further the specific polishing fluid that adopts more adapts to the surface finish processing of yttrium vanadate crystal, makes working (machining) efficiency improve greatly, and processing effect is better.
The specific embodiment:
The technique for manufacturing batch of embodiment one, a kind of size of monocrystal chip of yttrium vanadic acid:
The first step: give yttrium vanadate single crystal accurately directed.With high-quality yttrium vanadate single crystal material, as requested the vanadic acid yttrium is carried out orientation then earlier.During with the X-ray orientation device orientation, earlier with calibrated bolck zeroing, the crystal orientation of measuring yttrium vanadate single crystal then.
Second step: the cutting of yttrium vanadate single crystal.With wax reserve to the vanadic acid yttrium fix, vertically when the plane, reverberation can turn back to the cut direction that the principle of former luminous point is regulated cutting machine according to light.After fixing and regulating, cut out the wafer profile of vanadic acid yttrium accurately with cutting machine.
The 3rd step: the chamfering of vanadic acid yttrium.In order to put in order the dish chamfering in batches, necessary some auxiliary jig is done some very thin very narrow long glass bars.The vanadic acid yttrium that will go up dish and glass bar evenly be coated with wax, put into many lattices, then vanadic acid yttrium fritter is put into lattice with glass bar, compress at last, put neat, fix.Go up the yttrium vanadate single crystal that dish obtains like this, row has a lot of ditches with perpendicular all very neat again between row and the row and between perpendicular and perpendicular, can put in order the dish chamfering with a corresponding roundlet gem stick like this.Whole dish chamfering not only can realize producing in batches, and when having solved special little crystal block chamfering, with the bad problem of taking of hand.During because of process finishing, customer requirement leaves 0.1mm left and right sides chamfering surplus, so will calculate processing capacity, comes chamfering by processing capacity and the total amount that leaves surplus.
The 4th step: the grinding of vanadic acid yttrium wafer.We adopt the diamond dust of W20, on two machines or four machines the vanadic acid yttrium are roughly ground.When appearance and size near the time, corase grind finishes.Adopt the diamond dust of W7 to finish grind.Because the vanadic acid yttrium is used in the optical-fibre communications mostly, so require very high to the depth of parallelism.We also necessarily will get well at the depth of parallelism when correct grinding, otherwise can not obtain the very high depth of parallelism after polishing.We bring the good vanadic acid yttrium wafer of correct grinding and use miking, and its whole dish deviation must be less than 0.001mm.
The 5th step: the polishing of vanadic acid yttrium wafer.We carry out just throwing with cerium oxide earlier on two machines or four machines.Because the hardness of vanadic acid yttrium is not high relatively, so very fast with the speed of cerium oxide polishing.By jettisoning, after face shape etc. reaches requirement substantially, adopt the T.S.E2040 polishing fluid to polish at last to sand holes.T.S.E2040 polishing fluid pH value: 10.8, its Main Ingredients and Appearance proportioning is:
SiO
2The content percentage by weight: 14.5%, particle mean size (nm): 45;
Sodium (Na) weight content: 0.3%;
Other impurity weight content: 0.01%;
All the other are water.
We are contained SiO in the T.S.E2040 polishing fluid as can be seen
2Average grain diameter very little, so with its polishing the surface roughness of yttrium vanadate crystal is worked into better at last.
Behind good this face of throwing, with blade the cerograph that is used for fixing is fallen, lower wall turns over vanadic acid yttrium cuboid then and goes up dish, goes on foot the 5th by the 3rd and goes on foot grinding and the polishing of doing another side, obtains the size of monocrystal chip of yttrium vanadic acid that processes at last.
The technique for manufacturing batch of embodiment two, a kind of size of monocrystal chip of yttrium vanadic acid:
The first step: give yttrium vanadate single crystal accurately directed.With high-quality yttrium vanadate single crystal material, as requested the vanadic acid yttrium is carried out orientation then earlier.During with the X-ray orientation device orientation, earlier with calibrated bolck zeroing, the crystal orientation of measuring yttrium vanadate single crystal then.
Second step: the cutting of yttrium vanadate single crystal.With wax reserve to the vanadic acid yttrium fix, vertically when the plane, reverberation can turn back to the cut direction that the principle of former luminous point is regulated cutting machine according to light.After fixing and regulating, cut out the profile of vanadic acid yttrium accurately with cutting machine.
The 3rd step:, do some very thin very narrow long glass bars in order to put in order the dish chamfering in batches.The vanadic acid yttrium that will go up dish and glass bar evenly be coated with wax, put into many lattices, then the vanadic acid yttrium fritter that is higher than glass bar is put into lattice with glass bar, compress at last, put neat, fix.Go up the yttrium vanadate single crystal that dish obtains like this, row has a lot of ditches with perpendicular all very neat again between row and the row and between perpendicular and perpendicular, slides in ditch with a corresponding roundlet gem stick and puts in order the dish chamfering.Whole dish chamfering not only can realize producing in batches, and when having solved special little crystal block chamfering, with the bad problem of taking of hand.During because of process finishing, customer requirement leaves 0.1mm left and right sides chamfering surplus, so will calculate processing capacity, comes chamfering by processing capacity and the total amount that leaves surplus.
The 4th step: adopt the diamond dust of W20, on two machines or four machines, the vanadic acid yttrium is roughly ground.When appearance and size near the time, corase grind finishes.Adopt the diamond dust of W7 to finish grind.Because the vanadic acid yttrium is used in the optical-fibre communications mostly, so require very high to the depth of parallelism.We also necessarily will get well at the depth of parallelism when correct grinding, otherwise can not obtain the very high depth of parallelism after polishing.We bring the good vanadic acid yttrium of correct grinding and use miking, and its whole dish deviation must be less than 0.001mm.
The 5th step: on two machines or four machines, carry out just throwing with cerium oxide earlier.Because the hardness of vanadic acid yttrium is not high relatively, so very fast with the speed of cerium oxide polishing.By jettisoning, after face shape etc. reaches requirement substantially, adopt the T.S.E2040 polishing fluid to polish at last to sand holes.The pH value of T.S.E2040 polishing fluid: 11; The Main Ingredients and Appearance weight proportion is:
SiO
2Content: 15%, particle mean size (nm): 50;
Sodium (Na) content: 0.3%;
Other impurity: 0.01%;
All the other are water.
We are contained SiO in the T.S.E2040 polishing fluid as can be seen
2Average grain diameter very little, so with its polishing the surface roughness of yttrium vanadate crystal is worked into better at last.
After having thrown the front, with blade the cerograph that is used for fixing is fallen, lower wall turns over vanadic acid yttrium cuboid then and goes up dish, goes on foot for the 5th step by the 3rd and does the processing back side, obtains the rectangle size of monocrystal chip of yttrium vanadic acid that processes at last.
The technique for manufacturing batch of embodiment three, a kind of size of monocrystal chip of yttrium vanadic acid:
The first step: give yttrium vanadate single crystal accurately directed.With high-quality yttrium vanadate single crystal material, as requested the vanadic acid yttrium is carried out orientation then earlier.During with the X-ray orientation device orientation, earlier with calibrated bolck zeroing, the crystal orientation of measuring yttrium vanadate single crystal then.
Second step: the cutting of yttrium vanadate single crystal.With wax reserve to the vanadic acid yttrium fix, vertically when the plane, reverberation can turn back to the cut direction that the principle of former luminous point is regulated cutting machine according to light.After fixing and regulating, cut out the fritter profile (wafer) of vanadic acid yttrium accurately with cutting machine.
The 3rd step: the chamfering of vanadic acid yttrium.Coil chamfering in order to put in order in batches, necessary some auxiliary jig, we do some very thin very narrow long glass bars.The vanadic acid yttrium that will go up dish and glass bar evenly be coated with wax, put into many lattices, then vanadic acid yttrium fritter is put into lattice with glass bar, compress at last, put neat, fix.Go up the yttrium vanadate single crystal that dish obtains like this, row has a lot of ditches with perpendicular all very neat again between row and the row and between perpendicular and perpendicular, can put in order the dish chamfering with a corresponding roundlet gem stick like this.Whole dish chamfering not only can realize producing in batches, and when having solved special little crystal block chamfering, with the bad problem of taking of hand.During because of process finishing, require to leave 0.1mm left and right sides chamfering surplus,, come chamfering by processing capacity and the total amount that leaves surplus so will calculate processing capacity.
The 4th step: the grinding of vanadic acid yttrium.We adopt the diamond dust of W20, on two machines or four machines the vanadic acid yttrium are roughly ground.When appearance and size near the time, corase grind finishes.Adopt the diamond dust of W7 to finish grind.Because the vanadic acid yttrium is used in the optical-fibre communications mostly, so require very high to the depth of parallelism.We also necessarily will get well at the depth of parallelism when correct grinding, otherwise can not obtain the very high depth of parallelism after polishing.We bring the good vanadic acid yttrium of correct grinding and use miking, and its whole dish deviation must be less than 0.001mm.
The 5th step: the polishing of vanadic acid yttrium.We carry out just throwing to the vanadic acid yttrium with cerium oxide earlier on two machines or four machines.Because the hardness of vanadic acid yttrium is not high relatively, so very fast with the speed of cerium oxide polishing.By jettisoning, after face shape etc. reached requirement substantially, adopt the pH value: 11.1 T.S.E2040 polishing fluid polished at last to sand holes.The Main Ingredients and Appearance of T.S.E2040 polishing fluid is:
SiO
2The content percentage by weight: 14%, particle mean size (nm): 60;
Sodium (Na) weight content: 0.3%;
Other impurity weight: 0.01%;
All the other are water.
We are contained SiO in the T.S.E2040 polishing fluid as can be seen
2Average grain diameter less, so with its polishing the surface roughness of yttrium vanadate crystal is worked into better at last, easier reach quality in the hope of.
One side throw good after, with blade the cerograph that is used for fixing is fallen, lower wall turns over vanadic acid yttrium cuboid then and goes up dish, goes on foot the 5th by the 3rd and goes on foot and do the processing another side, obtains the size of monocrystal chip of yttrium vanadic acid fritter that processes at last.
Claims (1)
1, a kind of technique for manufacturing batch of size of monocrystal chip of yttrium vanadic acid, carry out as follows:
The first step: select the yttrium vanadate single crystal material for use, the yttrium vanadate single crystal material is carried out orientation, earlier with calibrated bolck zeroing, the crystal orientation of measuring yttrium vanadate single crystal then with the X-ray orientation device orientation;
Second step: with wax reserve to the yttrium vanadate single crystal material fix, when vertically passing through the plane according to light, reverberation can turn back to the cut direction that the principle of former luminous point is regulated cutting machine, cuts out the wafer profile of vanadic acid yttrium with cutting machine;
The 3rd step: auxiliary jig selects for use some to be narrower than the glass bar of size of monocrystal chip of yttrium vanadic acid thickness, the vanadic acid yttrium wafer that will go up dish and glass bar evenly be coated with wax, put into many lattices with glass bar, then vanadic acid yttrium wafer is put into lattice, compress at last, put together, fix; With a roundlet gem stick row and row between and perpendicular and perpendicular between ditch in slide and put in order and coil chamfering;
The 4th step: adopt the diamond dust of W20 on two machines or four machines, the vanadic acid yttrium to be roughly ground, adopt the diamond dust of W7 to finish grind;
The 5th step: polish on two machines or four machines, carry out just throwing with cerium oxide earlier, by jettisoning, after face shape reaches requirement substantially, adopt the T.S.E2040 polishing fluid to polish at last to sand holes, the composition of T.S.E2040 polishing fluid is:
SiO
2Content percentage by weight: 14---16%;
Sodium (Na) weight content: 0.3%;
Other impurity weight content: 0.01%;
Its surplus is a water;
SiO wherein
2Particle mean size (nm): 40---70; Polishing fluid pH value: 10.7---11.2.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021328935A CN1310739C (en) | 2002-09-06 | 2002-09-06 | Technique for manufacturing batch size of monocrystal chip of yttrium vanadic acid |
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|---|---|---|---|
| CNB021328935A CN1310739C (en) | 2002-09-06 | 2002-09-06 | Technique for manufacturing batch size of monocrystal chip of yttrium vanadic acid |
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| CN1310739C true CN1310739C (en) | 2007-04-18 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102729132A (en) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | Method for performing wax-free grinding and fine polishing on CdZnTe wafer |
| CN105458907A (en) * | 2015-12-02 | 2016-04-06 | 福建福晶科技股份有限公司 | Surface polishing method for tellurium dioxide crystals |
| CN107972193A (en) * | 2017-10-20 | 2018-05-01 | 苏州奥趋光电技术有限公司 | A kind of processing technology for aluminium nitride seed crystal |
| CN111775354B (en) * | 2020-06-19 | 2021-10-01 | 山东省科学院新材料研究所 | A kind of processing method of potassium tantalum niobate single crystal substrate element |
| CN112757150A (en) * | 2020-12-29 | 2021-05-07 | 南京航空航天大学 | Rapid polishing method of gallium nitride single crystal material for electronic device |
| CN116871985B (en) * | 2023-09-05 | 2023-12-01 | 河北远东通信系统工程有限公司 | Polishing process of small-size high-frequency piezoelectric wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4331452A (en) * | 1980-08-04 | 1982-05-25 | Fairchild Camera And Instrument Corporation | Apparatus for crystal shaping |
| EP0791444A1 (en) * | 1996-02-29 | 1997-08-27 | Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft | Wafer manufacturing process |
| JP2001293652A (en) * | 2000-04-14 | 2001-10-23 | Hamai Co Ltd | Polishing apparatus and polishing method |
| JP2002164311A (en) * | 2000-11-24 | 2002-06-07 | Mitsubishi Materials Silicon Corp | Method and apparatus of orientation flat machining of ingot |
| CN1366098A (en) * | 2002-01-10 | 2002-08-28 | 北京工业大学 | Vanadate for measuring dislocation density and etching process of doped monocrystal |
-
2002
- 2002-09-06 CN CNB021328935A patent/CN1310739C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4331452A (en) * | 1980-08-04 | 1982-05-25 | Fairchild Camera And Instrument Corporation | Apparatus for crystal shaping |
| EP0791444A1 (en) * | 1996-02-29 | 1997-08-27 | Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft | Wafer manufacturing process |
| JP2001293652A (en) * | 2000-04-14 | 2001-10-23 | Hamai Co Ltd | Polishing apparatus and polishing method |
| JP2002164311A (en) * | 2000-11-24 | 2002-06-07 | Mitsubishi Materials Silicon Corp | Method and apparatus of orientation flat machining of ingot |
| CN1366098A (en) * | 2002-01-10 | 2002-08-28 | 北京工业大学 | Vanadate for measuring dislocation density and etching process of doped monocrystal |
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| CN1480305A (en) | 2004-03-10 |
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