CN1303652C - Cleaning method of semiconductor wafer - Google Patents
Cleaning method of semiconductor wafer Download PDFInfo
- Publication number
- CN1303652C CN1303652C CNB021318689A CN02131868A CN1303652C CN 1303652 C CN1303652 C CN 1303652C CN B021318689 A CNB021318689 A CN B021318689A CN 02131868 A CN02131868 A CN 02131868A CN 1303652 C CN1303652 C CN 1303652C
- Authority
- CN
- China
- Prior art keywords
- wafer
- cleaning
- semiconductor wafer
- material layer
- column surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000004140 cleaning Methods 0.000 title claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000008367 deionised water Substances 0.000 claims abstract description 19
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- 239000011261 inert gas Substances 0.000 claims abstract description 10
- 238000007664 blowing Methods 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims abstract description 6
- 238000005201 scrubbing Methods 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 238000000407 epitaxy Methods 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 230000001680 brushing effect Effects 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 53
- 239000013078 crystal Substances 0.000 description 41
- 238000005516 engineering process Methods 0.000 description 12
- 239000002253 acid Substances 0.000 description 9
- 239000007921 spray Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000003643 water by type Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012940 design transfer Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A method for cleaning a semiconductor wafer provides a wafer having a material layer. Then, a brushing process is performed to remove particles on the wafer surface by using a brush head and deionized water. And then, blowing the wafer by inert gas to remove water marks on the surface of the wafer and prevent the wafer from being influenced by oxygen.
Description
Technical field
The invention relates to a kind of semiconductor cleaning, and particularly relevant for a kind of cleaning method of semiconductor crystal wafer.
Background technology
In the technology of integrated circuit component, the most frequent processing step is exactly that wafer is cleaned.The purpose that wafer is cleaned is organic compound, metal impurities or the particulate (Particle) that is attached on the crystal column surface in order to remove.And these pollutants can be very big for the influence of product subsequent technique.The pollution of metal impurities can cause p-n to connect the electric leakage of face, the lifetime of reduction minority carrier, the breakdown voltage of reduction grid oxic horizon.Particulate adhere to the authenticity that then can influence the lithography process design transfer, even cause the short circuit of circuit structure.Therefore, in the wafer cleaning, must effectively remove organic compound, metal impurities and the particulate (Particle) that is attached to crystal column surface, crystal column surface must not have native oxide (NativeOxide) after cleaning simultaneously, and surface roughness is minimum.
Scrub technology (Scrubber Process) and be present industry be commonly used to remove plain conductor technology, chemical vapor deposition method (Chemical Vapor Deposition, CVD), with epitaxy technique after, remove the method for particulate.The known technology of scrubbing is that wafer is placed in the scrubbing unit, utilize a large amount of deionized water (pressure is about 12MPa to 20MPa) flushing crystal column surface, while also utilizes the brush in the scrubbing unit to scrub wafer surface, so can effectively remove the particle that is attached to crystal column surface.
Yet, after the above-mentioned process of scrubbing, on the surface of wafer, often occur the phenomenon of washmarking.And the generation of washmarking easily causes qualification rate and problem such as electrically not good.And, airborne oxygen (O
2) also be easy to form weak acid with deionized water at crystal column surface, and influence the usefulness of element.Therefore, how to prevent that crystal column surface from producing washmarking, and prevent that airborne oxygen and deionized water from forming weak acid at crystal column surface is very important.
Summary of the invention
In view of this, a purpose of the present invention can prevent that crystal column surface from producing washmarking, and prevent that airborne oxygen and deionized water from forming weak acid at crystal column surface for a kind of cleaning method of semiconductor crystal wafer is provided, and can lift elements usefulness, and improve and make production capacity.
According to above-mentioned purpose of the present invention, a kind of cleaning method of semiconductor crystal wafer is proposed, the method provides the wafer with material layer.Then, scrub technology, remove the particulate of crystal column surface with brush and deionized water.Afterwards, with the blowing inert gas wafer, with the washmarking that removes crystal column surface with prevent that wafer is influenced by oxygen.
The present invention be with plain conductor technology, chemical vapor deposition method or epitaxy technique after a crystal column surface forms a material layer, when this wafer is carried out scrubbing technology, supply with deionized water earlier to crystal column surface, and after scrubbing crystal column surface with brush, when drying is attached to the deionized water of crystal column surface, with the blowing inert gas crystal column surface, can prevent that not only crystal column surface from forming washmarking, and can avoid airborne oxygen (O
2) and deionized water form weak acid at crystal column surface, and influence the usefulness of element.
Description of drawings
Fig. 1 is the cleaning method flow chart of the semiconductor crystal wafer of a preferred embodiment of the present invention;
Fig. 2 is the brushing device schematic diagram of the semiconductor crystal wafer of a preferred embodiment of the present invention;
Fig. 3 A and Fig. 3 B are the brushing device generalized section of the semiconductor crystal wafer of a preferred embodiment of the present invention.
100,102,104: step
200: wafer
202: brushing system
204: the wafer carrying platform
206: brushhead arm
208: brush
210: spray nozzle arm
212: spray shower nozzle
214: gas tip
216: the washed with de-ionized water shower nozzle
Embodiment
Fig. 1 is the cleaning method flow chart of the semiconductor crystal wafer of a preferred embodiment of the present invention.
Fig. 2 is the brushing device schematic diagram of the semiconductor crystal wafer of a preferred embodiment of the present invention.Fig. 3 A and Fig. 3 B are the brushing device generalized section of the semiconductor crystal wafer of a preferred embodiment of the present invention.Below please be simultaneously with reference to Fig. 1, Fig. 2, Fig. 3 A and Fig. 3 B, it is in order to illustrate preferred embodiment of the present invention.And in Fig. 2, Fig. 3 A and Fig. 3 B, identical member gives identical symbol.
At first, provide a predetermined wafer 200 of scrubbing, and this wafer 200 is put on the wafer carrying platform 204 that is arranged at brushing system 202 (step 100).Wherein, formed a material layer on the wafer 200, the material of this material layer comprises conductor material (for example being polysilicon, multi-crystal silicification metal, copper, aluminium or other metal etc.), dielectric material (for example silica, silicon nitride etc.).The method that forms this material layer for example is sputtering method, chemical vapour deposition technique, epitaxy etc.And many particulates can be adhered in the surface of wafer 200 in the formation technology of material layer.
Then, supply with deionized water,, remove the particulate (step 102) on wafer 200 surfaces to scrub technology to wafer 200 surfaces.In this step, utilize brushhead arm (Brush Arm) 206 to move brush 208 to wafer 200 surfaces, and to spray nozzle arm 210 movable spray shower nozzles 212 wafers 200 tops.Then, wafer carrying platform 204 drives wafer 200 and rotates with direction A on the one hand, 208 of brushes move (as shown in Figure 3A) with direction B, utilize simultaneously and spray shower nozzle 212 supply deionized waters to wafer 200 surfaces, remove wafer 200 particles to scrub, be cleaned totally so as to the whole surface that makes wafer 200.Then, movable spray nozzle arm 210 makes injection shower nozzle 212 remove from wafer 200 tops, and the stop supplies deionized water makes brush 208 remove from wafer 200 surfaces with brushhead arm 206 simultaneously to wafer 200 surfaces.Then, again with washed with de-ionized water shower nozzle 216 supply with deionized waters to wafer 200 surfaces to clean.
Afterwards, with a blowing inert gas wafer 200 surfaces, with the washmarking that removes wafer 200 surfaces and prevent airborne oxygen (O
2) and deionized water form weak acid (step 104) at crystal column surface.In this step, at first, stop to supply with deionized water, and continue rotation wafer carrying platform 204 and make wafer 200 rotations, be attached to the deionized water on wafer 200 surfaces with drying.Because, when drying wafer 200 in this way, be easy to form washmarking on wafer 200 surfaces, and airborne oxygen (O
2) also can form weak acid at crystal column surface with deionized water, and influence the usefulness of element.Therefore, for the washmarking that removes wafer 200 surfaces and prevent airborne oxygen (O
2) and deionized water form weak acid at crystal column surface, in this step, when being rotated wafer carrying platform 204 and being attached to the deionized water on wafer 200 surfaces with drying, supply with a blowing inert gas wafer 200 surfaces from gas tip 214 simultaneously, with the washmarking that removes wafer 200 surfaces and prevent airborne oxygen (O
2) and deionized water form weak acid at crystal column surface.Wherein, inert gas for example is nitrogen, krypton gas or argon gas (shown in Fig. 3 B).
Described according to the embodiment of the invention, with plain conductor technology, chemical vapor deposition method or epitaxy technique after crystal column surface forms a material layer, when this wafer is carried out scrubbing technology, supply with deionized water earlier to crystal column surface, and after scrubbing crystal column surface with brush, when drying is attached to the deionized water of crystal column surface, with the blowing inert gas crystal column surface, can prevent that not only crystal column surface from forming washmarking, and can avoid airborne oxygen (O
2) and deionized water form weak acid at crystal column surface, and influence the usefulness of element.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021318689A CN1303652C (en) | 2002-09-04 | 2002-09-04 | Cleaning method of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021318689A CN1303652C (en) | 2002-09-04 | 2002-09-04 | Cleaning method of semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1480990A CN1480990A (en) | 2004-03-10 |
| CN1303652C true CN1303652C (en) | 2007-03-07 |
Family
ID=34145057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021318689A Expired - Fee Related CN1303652C (en) | 2002-09-04 | 2002-09-04 | Cleaning method of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1303652C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054083A (en) * | 2017-12-13 | 2018-05-18 | 武汉新芯集成电路制造有限公司 | A kind of method being removed to crystal column surface particulate matter |
| CN111826632A (en) * | 2019-04-22 | 2020-10-27 | 上海新微技术研发中心有限公司 | Deposition method and deposition equipment for amorphous silicon film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5351360A (en) * | 1991-06-06 | 1994-10-04 | Enya Systems, Limited | Cleaning device for a wafer mount plate |
-
2002
- 2002-09-04 CN CNB021318689A patent/CN1303652C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5351360A (en) * | 1991-06-06 | 1994-10-04 | Enya Systems, Limited | Cleaning device for a wafer mount plate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1480990A (en) | 2004-03-10 |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070307 Termination date: 20190904 |