CN1302133C - High-vacuum in-situ refining apparatus for extracting high-purity material - Google Patents
High-vacuum in-situ refining apparatus for extracting high-purity material Download PDFInfo
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Abstract
本发明公开了一种用于提炼高纯以及超高纯材料的高真空原位精炼装置,该高真空精炼装置由提炼腔、真空系统、扩散炉、坩锅、进料取料系统、保护气体装置以及工业智能温度控制器通过真空管件、气路以及导线等将各部分连接构成精炼装置整体。该装置具有分阶段分别有效去除高饱和蒸汽压杂质以及低饱和蒸汽压杂质的突出优点,同时提炼过程始终保持高真空状态,并且整个生产过程与大气隔离,极大地减少了大气对原料的污染,该装置具有产品质量高、生产能力大、性能稳定、可靠,适合于高纯以及超高纯材料的生产,特别是高活性高纯材料的制备。
The invention discloses a high-vacuum in-situ refining device for refining high-purity and ultra-high-purity materials. The high-vacuum refining device consists of a refining chamber, a vacuum system, a diffusion furnace, a crucible, a feeding and retrieving system, and a protective gas The device and the industrial intelligent temperature controller connect various parts through vacuum pipe fittings, gas circuits and wires to form the whole refining device. The device has the outstanding advantages of effectively removing impurities with high saturated vapor pressure and impurities with low saturated vapor pressure in stages. At the same time, the refining process always maintains a high vacuum state, and the entire production process is isolated from the atmosphere, which greatly reduces the pollution of the atmosphere to raw materials. The device has high product quality, large production capacity, stable and reliable performance, and is suitable for the production of high-purity and ultra-high-purity materials, especially the preparation of high-activity high-purity materials.
Description
技术领域technical field
本发明涉及一种生产高纯及超高纯材料的高真空原位精炼装置,属于冶金和化工行业中高纯及超高纯材料冶炼领域。The invention relates to a high-vacuum in-situ refining device for producing high-purity and ultra-high-purity materials, which belongs to the field of high-purity and ultra-high-purity material smelting in metallurgy and chemical industry.
背景技术Background technique
高纯材料如高纯金属、高纯非金属以及高纯无机化合物材料等在制备化合物半导体材料与器件以及航空、航天等领域有着广泛的应用,如II-VI、III-V族化合物半导体中使用的锌、镁、钙、铝、砷、磷等金属与非金属材料其纯度要求在99.999%(5N)以上,否则过多的杂质会严重影响半导体材料的结晶性以及光电特性,从而使器件性能大大下降。目前,高纯金属的生产多采用真空蒸馏方法或区域熔炼法等,如中国专利98113973.6,200320115091.0,200320115092.5以及外国专利KR2004022842-A,RU2236476-C1,JP10121163-A等报道的提炼设备及方法,在金属处于高温时,其真空度一般在10帕到0.01帕之间,真空室中的剩余气体还相当多,这对于活泼金属的提炼相当有害;另外,在提炼高纯金属过程中,对不同杂质的分离与去除效果差别很大,缺乏同时高效去除高饱和蒸汽压和低饱和蒸汽压杂质的方法,因而影响总的提纯效果。目前高纯金属的生产普遍采用湿法生产工艺,对环境危害大,同时产品质量不稳定。另外,对一些无机化合物材料多采用反应法制得,尚缺乏高效的提纯手段。High-purity materials such as high-purity metals, high-purity non-metals, and high-purity inorganic compound materials are widely used in the preparation of compound semiconductor materials and devices, as well as in aviation, aerospace and other fields, such as zinc used in II-VI and III-V compound semiconductors. , magnesium, calcium, aluminum, arsenic, phosphorus and other metal and non-metallic materials, the purity of which should be above 99.999% (5N), otherwise too many impurities will seriously affect the crystallinity and photoelectric properties of semiconductor materials, thereby greatly reducing the performance of the device . At present, the production of high-purity metals mostly adopts vacuum distillation method or regional smelting method, etc., such as Chinese patents 98113973.6, 200320115091.0, 200320115092.5 and foreign patents KR2004022842-A, RU2236476-C1, JP10121163-A and other reported refining equipment and methods. At high temperature, the vacuum degree is generally between 10 Pa and 0.01 Pa, and there is still a lot of residual gas in the vacuum chamber, which is quite harmful to the extraction of active metals; in addition, in the process of refining high-purity metals, the The separation and removal effects are very different, and there is a lack of methods to efficiently remove impurities with high saturated vapor pressure and low saturated vapor pressure at the same time, thus affecting the overall purification effect. At present, the production of high-purity metals generally adopts wet production process, which is harmful to the environment and the product quality is unstable. In addition, some inorganic compound materials are mostly prepared by reaction methods, and there is still a lack of efficient purification methods.
发明内容Contents of the invention
本发明的目的是针对现有技术的不足而提供一种全新的提炼高纯材料的高真空原位精炼装置,可以大大提高提纯效果,不仅质量稳定可靠,而且对环境友好的高纯材料的提炼技术和设备具有重要的工业应用价值。The purpose of the present invention is to provide a brand-new high-vacuum in-situ refining device for refining high-purity materials in view of the deficiencies of the prior art, which can greatly improve the purification effect, not only stable and reliable in quality, but also environmentally friendly for the extraction of high-purity materials The technology and equipment have important industrial application value.
为实现上述目的,本发明一种用于提炼高纯材料的高真空原位精炼装置包括:真空系统、提炼腔、扩散炉、坩锅、进料取料系统、保护气体装置和工业智能温度控制器(简称温控器);进料取料系统与提炼腔相连,扩散炉安装在提炼腔底部,坩锅设置在扩散炉内,温控器通过热偶补偿线及导线与扩散炉相连,真空系统分别与提炼腔和保护气体装置相连,扩散炉中设置有两根独立的加热丝,即上部加热丝与下部加热丝,可分别加热坩锅的上部与下部,以形成上高下低或上低下高的温度分布;所述坩锅的口上还安装一坩锅盖,坩锅盖上均匀分布小孔;所述提炼腔上部还安装一用于收集高饱和蒸汽压杂质的冷凝挡板。In order to achieve the above object, a high vacuum in-situ refining device for refining high-purity materials of the present invention includes: a vacuum system, a refining chamber, a diffusion furnace, a crucible, a feeding and retrieving system, a protective gas device and an industrial intelligent temperature control (referred to as temperature controller); the feeding and reclaiming system is connected to the refining chamber, the diffusion furnace is installed at the bottom of the refining chamber, the crucible is set in the diffusion furnace, the temperature controller is connected to the diffusion furnace through thermocouple compensation lines and wires, and the vacuum The system is respectively connected with the refining chamber and the protective gas device. There are two independent heating wires in the diffusion furnace, that is, the upper heating wire and the lower heating wire, which can heat the upper and lower parts of the crucible respectively to form an upper high and lower lower or upper Low and high temperature distribution; a crucible cover is also installed on the mouth of the crucible, and small holes are evenly distributed on the crucible cover; a condensation baffle for collecting high saturated vapor pressure impurities is also installed on the upper part of the refining chamber.
进一步地,所述真空系统包括前级泵、分子泵、离子泵和真空度测量仪,分子泵与前级泵相连,所述前级泵包括机械泵或干泵等真空泵,所述前级泵与分子泵之间安装电阻规和离子规或复合规。Further, the vacuum system includes a backing pump, a molecular pump, an ion pump and a vacuum degree measuring instrument, the molecular pump is connected to the backing pump, and the backing pump includes vacuum pumps such as mechanical pumps or dry pumps, and the backing pump Install resistance gauge and ion gauge or composite gauge between the molecular pump.
进一步地,所述提炼腔分为上下两部分,通过一闸板阀连接,提炼腔上部与所述分子泵通过另一闸板阀连接,提炼腔下部与所述离子泵相连,提炼腔上部还安装离子规或复合规。Further, the refining chamber is divided into upper and lower parts, connected by a gate valve, the upper part of the refining chamber is connected with the molecular pump through another gate valve, the lower part of the refining chamber is connected with the ion pump, and the upper part of the refining chamber is also Install ion gauge or compound gauge.
进一步地,所述进料取料系统由安装在提炼腔上部的拨叉、磁力手、快速进料阀门、观察窗、腔内壁挂钩以及透明密封箱组成,透明密封箱与所述提炼腔上部相连。Further, the feeding and retrieving system is composed of a shift fork installed on the upper part of the refining chamber, a magnetic hand, a fast feeding valve, an observation window, a hook on the inner wall of the chamber, and a transparent sealed box, and the transparent sealed box is connected to the upper part of the refining chamber .
进一步地,所述保护气体装置包括高压气瓶、减压阀、气路以及漏阀,保护气体装置分别与所述分子泵的进气口以及透明密封箱进气口相接。Further, the protective gas device includes a high-pressure gas cylinder, a pressure reducing valve, a gas circuit and a leakage valve, and the protective gas device is respectively connected to the air inlet of the molecular pump and the air inlet of the transparent sealed box.
进一步地,所述坩锅的上部装有提手,可与所述拨叉配合将坩锅从扩散炉里取出,并移至提炼腔上部,再由进料阀门取出。Furthermore, the upper part of the crucible is equipped with a handle, which can cooperate with the shift fork to take out the crucible from the diffusion furnace, move it to the upper part of the refining chamber, and then take it out through the feeding valve.
本发明利用双加热丝扩散炉独立控制坩锅上部与下部的温度,在不同阶段形成上高下低和上低下高的温度分布,在高真空条件下两步法分别去除高饱和蒸汽压和低饱和蒸汽压杂质,第一步:坩锅按照上高下低的温度分布分段升温去除高饱和蒸汽压杂质,第二步:坩锅形成上低下高的温度分布,将下部温度升至最高点保持若干时间,让处于下部的原料蒸发,并在坩锅口附近温度较低的地方结晶或冷凝,将提纯材料与低饱和蒸汽压杂质分离,从而获得高纯材料。此外,本发明还具有如下优点:In the present invention, the temperature of the upper part and the lower part of the crucible is independently controlled by a double heating wire diffusion furnace, and the temperature distribution of the upper part and the lower part and the upper part and the lower part are formed at different stages. Saturated vapor pressure impurities, the first step: the crucible is heated up in sections according to the temperature distribution of the upper part and the lower part to remove the high saturated vapor pressure impurities. The second step: the crucible forms a temperature distribution of the upper part and the lower part, and the temperature of the lower part is raised to the highest point Keep it for a certain period of time, let the raw material in the lower part evaporate, and crystallize or condense at a place with a lower temperature near the mouth of the crucible, and separate the purified material from impurities with low saturated vapor pressure, thereby obtaining a high-purity material. In addition, the present invention also has the following advantages:
1,本发明高真空原位精炼装置通过密封箱与提炼腔的紧密连接完全与大气隔离,整个生产过程都在保护气体下进行,同时根据材料特点,可灵活选用保护气体,从而极大地减少了空气中多种成分对高纯材料的污染;1. The high-vacuum in-situ refining device of the present invention is completely isolated from the atmosphere through the tight connection between the sealed box and the refining chamber, and the entire production process is carried out under the protective gas. At the same time, according to the characteristics of the material, the protective gas can be flexibly selected, thereby greatly reducing Pollution of high-purity materials by various components in the air;
2,在提炼材料时,整个提炼腔保持高真空状态,本低气压在1×10-4帕以下;进料时,提炼腔上部充保护气体,但提炼腔下部与上部通过闸板阀隔开,并利用离子泵抽气,仍然保持高真空状态,从而有效地减少了提炼时处于高温的高纯材料与残余气体的反应与复合,大大地减少了气体对材料的影响,特别适合活泼材料的提纯;2. When refining materials, the entire refining chamber maintains a high vacuum state, and the low pressure is below 1×10 -4 Pa; when feeding materials, the upper part of the refining chamber is filled with protective gas, but the lower part of the refining chamber is separated from the upper part by a gate valve , and use the ion pump to pump air, and still maintain a high vacuum state, thereby effectively reducing the reaction and recombination of high-purity materials at high temperatures during refining and residual gases, greatly reducing the impact of gases on materials, especially suitable for active materials. Purify;
3,生产时,工作人员与提炼材料完全隔离,劳动条件好;提炼时产生的有毒蒸汽可通过真空系统排放或在冷凝挡板中收集,污染小;3. During production, the workers are completely isolated from the refining materials, and the working conditions are good; the toxic steam generated during refining can be discharged through the vacuum system or collected in the condensation baffle, with little pollution;
4,本发明装置结构简单,牢固耐用,操作简单、便利,产品质量稳定;4. The device of the present invention has simple structure, firmness and durability, simple and convenient operation, and stable product quality;
5,本发明非常适合通过透明密封箱多台串联组合,并形成流水线,生产效率高,产量大。5. The present invention is very suitable for combining multiple sets of transparent sealed boxes in series to form an assembly line, with high production efficiency and large output.
附图说明Description of drawings
图1为本发明用于提炼高纯材料的高真空原位精炼装置的框图。Fig. 1 is a block diagram of a high vacuum in-situ refining device for refining high-purity materials according to the present invention.
1提炼腔,2真空系统,3扩散炉,4坩锅,5进料取料系统,6保护气体装置,7温控器。1. Refining chamber, 2. Vacuum system, 3. Diffusion furnace, 4. Crucible, 5. Feeding and reclaiming system, 6. Protective gas device, 7. Temperature controller.
图2为本发明高真空原位精炼装置主体结构示意图。Fig. 2 is a schematic diagram of the main structure of the high vacuum in-situ refining device of the present invention.
8提炼腔上部,9提炼腔下部,10、41闸板阀,11透明密封腔,3扩散炉,4坩锅,7温控器,12分子泵,13前级泵,14离子泵,15离子规或复合规,16电阻规,17保护气瓶,18冷凝挡板。8 Upper part of refining chamber, 9 Lower part of refining chamber, 10, 41 Gate valve, 11 Transparent sealed chamber, 3 Diffusion furnace, 4 Crucible, 7 Temperature controller, 12 Molecular pump, 13 Backing pump, 14 Ion pump, 15 Ion Gauge or composite gauge, 16 resistance gauges, 17 protective gas cylinders, 18 condensation baffles.
图3为进料取料系统结构示意图。Figure 3 is a schematic structural diagram of the feeding and reclaiming system.
11透明密封箱,19快速进料阀门,20拨叉,21磁力手,22观察窗,23腔内壁挂钩,4坩锅,24手套口。11 Transparent sealed box, 19 Quick feed valve, 20 Shift fork, 21 Magnetic hand, 22 Observation window, 23 Cavity inner wall hook, 4 Crucible, 24 Glove port.
图4为本发明中用于提炼高纯材料的特制扩散炉结构示意图。Fig. 4 is a schematic structural diagram of a special diffusion furnace used for refining high-purity materials in the present invention.
25炉体外壳,26防辐射金属圆筒,27PBN绝缘支架,28上部加热丝,29下部加热丝,30上部热偶,31下部热偶,32多层防辐射金属片,33真空法兰,34热偶接头,35电源接头。25 furnace shell, 26 radiation-proof metal cylinder, 27PBN insulating bracket, 28 upper heating wire, 29 lower heating wire, 30 upper thermocouple, 31 lower thermocouple, 32 multi-layer radiation-proof metal sheet, 33 vacuum flange, 34 Thermocouple connector, 35 power connector.
图5为本发明中用于提炼高纯材料的坩锅结构示意图。Fig. 5 is a schematic structural diagram of a crucible for refining high-purity materials in the present invention.
36坩锅主体,37坩锅盖,38坩锅挂钩。36 crucible main bodies, 37 crucible lids, 38 crucible hooks.
图6为应用本发明装置提炼高纯镁前后的实物照片。Fig. 6 is a physical photo before and after applying the device of the present invention to extract high-purity magnesium.
39提炼前纯度为99.95%的镁粒,40提炼后得到的再结晶镁粒团簇。39 Magnesium particles with a purity of 99.95% before refining, and 40 recrystallized magnesium particle clusters obtained after refining.
具体实施方式Detailed ways
下面结合实施例和附图对本发明进行详细说明,但不能理解为对本发明保护范围的限制。The present invention will be described in detail below in conjunction with the embodiments and drawings, but it should not be construed as limiting the protection scope of the present invention.
如图1所示的本发明高真空原位精炼装置的框图,该装置包括:提炼腔1、真空系统2、扩散炉3、坩锅4、进料取料系统5、保护气体装置6以及工业智能温度控制器(简称温控器)7。真空系统2沿着横向与提炼腔1相连,保护气体装置6通过阀门与真空系统2相连;而扩散炉3以及进料取料系统5沿着纵向分别与提炼腔1的下部及上部连接,温控器7通过热偶补偿线以及电源导线与扩散炉3相连。The block diagram of the high vacuum in-situ refining device of the present invention as shown in Fig. 1, this device comprises: refining chamber 1, vacuum system 2, diffusion furnace 3, crucible 4, feeding and reclaiming system 5, protective gas device 6 and industrial Intelligent temperature controller (thermostat for short) 7. The vacuum system 2 is connected to the refining chamber 1 along the horizontal direction, and the protective gas device 6 is connected to the vacuum system 2 through a valve; while the diffusion furnace 3 and the feeding and retrieving system 5 are respectively connected to the lower and upper parts of the refining chamber 1 along the longitudinal direction. The controller 7 is connected to the diffusion furnace 3 through thermocouple compensation wires and power wires.
如图2所示的本发明高真空原位精炼装置主体结构示意图,其中提炼腔1由提炼腔上部8以及提炼腔下部9组成,它们通过闸板阀10连接;提炼腔上部8与扩散炉3连接,提炼腔下部9与透明密封箱11连接,而扩散炉3通过热偶补偿线以及电源导线与温控器7相连。真空系统2由分子泵12,前级泵13、离子泵14、离子规15以及电阻规16组成。分子泵12通过一闸板阀41与提炼腔上部8连接,分子泵12又通过漏阀、调压阀与保护气瓶17连接。离子泵14通过一闸板阀10与提炼腔下部9连接。闸板阀10上部还安装一冷凝挡板18用于冷凝从坩锅口扩散出来的各种蒸汽,可更换,实用方便。The schematic diagram of the main structure of the high vacuum in-situ refining device of the present invention as shown in Figure 2, wherein the refining chamber 1 is composed of the upper part 8 of the refining chamber and the lower part 9 of the refining chamber, which are connected by a gate valve 10; the upper part of the refining chamber 8 and the diffusion furnace 3 Connection, the lower part of the refining chamber 9 is connected to the transparent sealed box 11, and the diffusion furnace 3 is connected to the temperature controller 7 through a thermocouple compensation line and a power lead. The vacuum system 2 is composed of a molecular pump 12 , a backing pump 13 , an ion pump 14 , an ion gauge 15 and a resistance gauge 16 . The molecular pump 12 is connected to the upper part 8 of the refining chamber through a gate valve 41 , and the molecular pump 12 is connected to the protective gas cylinder 17 through a leakage valve and a pressure regulating valve. The ion pump 14 is connected with the lower part 9 of the refining chamber through a gate valve 10 . A condensing baffle 18 is also installed on the top of the gate valve 10 for condensing various steams diffused from the mouth of the crucible, which is replaceable and practical and convenient.
如图3所示的进料取料系统结构示意图,该系统由透明密封箱11、快速进料阀门19、拨叉20、磁力手21、观察窗22、腔内壁挂钩23以及坩锅4组成。进料时,首先在透明密封箱中将适量原料装入坩锅内,然后将坩锅4挂在腔内壁的挂钩23上,盖严进料阀门19。抽高真空,然后打开提炼腔1闸板阀10,利用拨叉20将坩锅4放入扩散炉3中。而在取料时,利用拨叉20将坩锅从扩散炉3中取出,并挂在挂钩23上;关闭闸板阀10,停分子泵12,机械泵,充保护气,打开进料阀门19,取出坩锅4放至透明密封箱11;然后将材料从坩锅4中取出,选取中间的再结晶部分进行取样、检测,对合格产品进行封装。透明密封箱11两侧有手套口24,相关操作通过手套24进行,整个生产过程中,高纯材料与大气隔开,确保产品质量稳定可靠;同时,工作人员与提炼材料完全隔离,生产条件好。The structure diagram of the feeding and retrieving system shown in Figure 3 is composed of a transparent sealed box 11, a fast feeding valve 19, a shift fork 20, a magnetic hand 21, an observation window 22, a
如图4所示为提炼高纯材料的扩散炉结构示意图,其特征在于在PBN绝缘支架27上绕有上、下两层独立加热丝,即上部加热丝28和下部加热丝29,可实现对坩锅4上、下部温度的独立控制,在不同阶段形成上高下低和上低下高的温度分布。在高真空条件下两步法提炼材料,从而分别去除高饱和蒸汽压和低饱和蒸汽压杂质,第一步:坩锅4按照上高下低的温度分布分段升温去除高饱和蒸汽压杂质;高饱和蒸汽压杂质从原料中蒸发然后从坩锅盖的小孔中排出,凝结在冷凝挡板上或被真空系统抽走;坩锅4上部温度高的目的是阻止杂质蒸汽在上部凝结。第二步:坩锅4形成上低下高的温度分布,将下部温度升至最高点保持若干时间,让处于下部的原料蒸发,并在坩锅4口附近温度较低的地方再结晶,将提纯材料与低饱和蒸汽压杂质分离,达到提炼高纯材料的目的。如图4所示,炉子的其他部分为炉体外壳25,多层防辐射金属圆筒26,上部热偶30,下部热偶31,多层防辐射金属片32,真空法兰33,热偶接头34,电源接头35;其中炉体外壳25、防辐射金属圆筒26、加热丝均为高纯难熔材料如不低于99.99%的高纯钽、铌、钼等,确保被提炼原材料在高温下无污染。As shown in Figure 4, it is a schematic diagram of the diffusion furnace for refining high-purity materials, which is characterized in that an upper and a lower layer of independent heating wires are wound on the
如图5所示为坩锅的结构示意图,其特征在于坩锅主体36口上有一坩锅盖37,可与坩锅紧密接合,坩锅盖上有均匀分布的孔径为1mm左右的小孔用来排出高饱和蒸汽压杂质。在坩锅中装上数量合适的原料使得在提炼时原料整体都位于炉子下部加热丝控制的区域,也就是原料上表面不高于下部加热丝的上端。装完料后,盖上坩锅盖37;坩锅主体上部有挂钩38,可与拨叉配合移动坩锅,进行进料与取料的操作。坩锅主体采用高纯PBN、高纯石英或高纯陶瓷等材料制成,坩锅盖、挂钩采用高纯难熔材料如高纯钽、铌、钼、PBN、石英、高纯刚玉陶瓷等制成,从而确保被提炼原材料在高温下无污染。As shown in Figure 5, it is a schematic structural diagram of the crucible, which is characterized in that there is a
如图6所示为应用本发明装置提炼高纯镁前后的实物照片。提炼前的镁粒38为市售99.95%金属镁,利用本发明装置提炼后,在坩锅口附近获得了再结晶的镁粒团簇40。我们利用感应耦合等离子体发射光谱仪对提炼前、一次提炼以及二次提炼后的金属镁的纯度以及所包含的主要杂质如高饱和蒸汽压杂质锌、低饱和蒸汽压杂质硅和铁进行了测试,其结果如表1所示;结果表明利用本发明高真空原位精炼装置一次提炼后金属镁的纯度达到99.995%以上,而二次提炼后的纯度达到99.9992%以上完全满足半导体材料与器件、航空和航天等尖端行业的需求,具有很大的经济效益与社会效益。As shown in Fig. 6, it is the physical photo before and after applying the device of the present invention to extract high-purity magnesium. The
表1本发明一次提炼、二次提炼所得高纯镁的纯度以及所含主要杂质与提炼前的分析比较
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| US5582630A (en) * | 1995-02-21 | 1996-12-10 | Sony Corporation | Ultra high purity magnesium vacuum distillation purification method |
| JPH10121163A (en) * | 1996-10-16 | 1998-05-12 | Dowa Mining Co Ltd | Method and device for producing high-purity indium |
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| KR20040022842A (en) * | 2002-09-10 | 2004-03-18 | 유병돈 | Method for purifying magnesium scrap with vacuum distillation |
| RU2236476C1 (en) * | 2002-12-26 | 2004-09-20 | Открытое акционерное общество "Новосибирский завод химконцентратов" | Lithium refining method and apparatus |
| CN2661700Y (en) * | 2003-11-27 | 2004-12-08 | 四川鑫炬矿业资源开发股份有限公司 | Vacuum rectifying apparatus for extracting high purity metal |
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| US5513834A (en) * | 1993-08-13 | 1996-05-07 | Johnson Matthey Electronics, Inc. | Preparation of high purity elements |
| US5582630A (en) * | 1995-02-21 | 1996-12-10 | Sony Corporation | Ultra high purity magnesium vacuum distillation purification method |
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| RU2236476C1 (en) * | 2002-12-26 | 2004-09-20 | Открытое акционерное общество "Новосибирский завод химконцентратов" | Lithium refining method and apparatus |
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