CN1301534C - Prevention methods for abnormal events of semiconductor furnace tube temperature and gas flow - Google Patents
Prevention methods for abnormal events of semiconductor furnace tube temperature and gas flow Download PDFInfo
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- CN1301534C CN1301534C CNB031464556A CN03146455A CN1301534C CN 1301534 C CN1301534 C CN 1301534C CN B031464556 A CNB031464556 A CN B031464556A CN 03146455 A CN03146455 A CN 03146455A CN 1301534 C CN1301534 C CN 1301534C
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 230000002265 prevention Effects 0.000 title claims description 21
- 230000002159 abnormal effect Effects 0.000 title abstract 3
- 230000002547 anomalous effect Effects 0.000 claims description 21
- 230000008878 coupling Effects 0.000 claims description 21
- 238000010168 coupling process Methods 0.000 claims description 21
- 238000005859 coupling reaction Methods 0.000 claims description 21
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 230000008676 import Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 9
- 238000001816 cooling Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 11
- 238000012544 monitoring process Methods 0.000 description 4
- 238000012797 qualification Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KNVAYBMMCPLDOZ-UHFFFAOYSA-N propan-2-yl 12-hydroxyoctadecanoate Chemical group CCCCCCC(O)CCCCCCCCCCC(=O)OC(C)C KNVAYBMMCPLDOZ-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
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- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
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Abstract
A method and device for preventing the abnormal events of temp and gas flow in semiconductor furnace tube features that the lateral thermal coupler and fire door thermal coupler are respectively installed to the tube wall of furnace tube and its external heater, a temp controller is connected to said two thermal couplers for controlling said heater, and a flow controller is used to control the gas flow in furnace tube, so preventing the abnormal events of temp and gas flow, the fire door thermal coupler is checked to maintain the first temp range, then inspecting the side wing thermocouple to maintain it in the second temperature range, inspecting the zero point of the flow controller to maintain it in the first gas flow rate range, loading the wafer and then heating, then inspecting the side wing thermocouple to maintain the side wing thermocouple in a third temperature range, inspecting the flow controller to maintain the side wing thermocouple in a second gas flow rate range, injecting gas into the furnace tube in a main procedure, and cooling and unloading the wafer after the main procedure is completed.
Description
Technical field
The present invention relates to a kind of manufacture of semiconductor and equipment thereof, be meant the prevention method and the device (method and apparatus for preventing afurnace from temperature and gas excursion) of a kind of semiconductor furnace tube temperature and gas flow anomalous event especially.
Background technology
Quartz stove tube is the basic equipment in the manufacture of semiconductor, it is used to carry out oxidation, doping and heat treatment supervisor, temperature and gas flow are the most important process parameter of binomial in this supervisor, it determines the qualification rate of this program, yet, for the control of the temperature of boiler tube and gas flow and be not easy, it has confidential relation with other board, must be dependent on experienced judgement usually.Aspect the control of gas flow, the gas flow that injects boiler tube in the main program depends on flow controller (Mass Flow Controller; MFC) reading, the correctness of this numerical value is relevant with the zero point (zero point) of carrying out the preceding flow controller of main program.The general operation personnel ignore the zero point of flow controller easily, yet, if it is too much to depart from default value zero point, in main program, still can not obtain correct process parameter only according to flow controller.Control for furnace tube temperature is then difficult more, this is because boiler tube is that mat comes supplied heat source such as heaters such as thermal resistance wires, and need in the processing procedure through heating up and for the regulation and control of heater, but the temperature of heater itself is the actual temperature of reaction boiler tube directly, though can install hot coupling (thermalcoupler) to help monitoring temperature at the tube wall of boiler tube, but the hot coupling temperature of the flank on finding tube wall rises or descends when reaching a numerical value, often the control of heater is away from suitable working point, cause the temperature information mistake of reacting if the hot coupling of flank breaks down, then consequence will be more serious.Unfortunately, the control misalignment of temperature and gas flow can not be found in processing procedure fully immediately, the inspection wafer starts after processing procedure finishes, and existing processing procedure is defective can not exempt all costs of having wasted, even need extra remedy procedure to remove the product on the wafer, sometimes even may cause scrapping of wafer.Use the processing procedure of boiler tube to need dynamic stability and control accurately, excessively rely on operating personnel and experience thereof anomalous event takes place easily, and automation control can improve reliability, and the prevention anomalous event takes place, thereby improve qualification rate and reduce cost.
Summary of the invention
Purpose of the present invention promptly is to propose a kind of semiconductor furnace tube temperature that takes place with the anomalous event of prevention semiconductor furnace tube temperature and gas flow and the prevention method and the device of gas flow anomalous event.
The prevention method and the device of semiconductor furnace tube temperature of the present invention and gas flow anomalous event are realized by following technical scheme.
The prevention method of a kind of semiconductor furnace tube temperature and gas flow anomalous event, this boiler tube by a heater around, the tube wall of this boiler tube and contiguous this heater are installed first and second hot coupling respectively, one temperature controller is regulated and control this heater according to this first and second hot coupling, reach the gas flow that a flow controller control imports this boiler tube, it is characterized in that comprising the following steps:
Inspect this second hot coupling whether in first temperature range:
Whether inspect this first hot coupling in second temperature range, and whether the zero point of inspecting this flow controller is in the first gas flow speed range;
Wafer is written in this boiler tube;
With the intensification of advancing the speed; And.
Whether inspect this first hot coupling in the 3rd temperature range, and whether inspect this flow controller in the second gas flow speed range.
The prevention method of described semiconductor furnace tube temperature and gas flow anomalous event is characterized in that: this first temperature range is a set point ± 5 ℃.
The prevention method of described semiconductor furnace tube temperature and gas flow anomalous event is characterized in that: this second temperature range is a set point ± 5 ℃.
The prevention method of described semiconductor furnace tube temperature and gas flow anomalous event is characterized in that: this first gas flow speed range is this zero point ± 1%.
The prevention method of described semiconductor furnace tube temperature and gas flow anomalous event is characterized in that: the 3rd temperature range is a set point ± 10 ℃.
The prevention method of described semiconductor furnace tube temperature and gas flow anomalous event is characterized in that: this second gas flow speed range is a set point ± 5%.
The prevention method and the device of semiconductor furnace tube temperature of the present invention and gas flow anomalous event, be to install hot coupling at the tube wall and the external heated device thereof of boiler tube, to provide temperature signal respectively to a temperature controller, one flow controller control feeds the gas flow of this boiler tube, the temperature of this heater of monitoring and boiler tube is respectively at a proper range before being written into wafer, and the zero point of this flow controller is at a proper range, after heating up, the temperature of monitoring this boiler tube is at a proper range, and this flow controller is at a proper range, and then carries out main program (main process).
The invention has the advantages that:
The present invention uses the more perfect step of inspecting before processing procedure carries out, make can being found ahead of time unusually of furnace tube temperature and gas flow and prevented, improving reliability, and the prevention anomalous event takes place, thereby improves qualification rate and reduce cost.
For feature of the present invention, effect are had further understanding, enumerate specific embodiment now and be described with reference to the accompanying drawings as follows:
For the personage who has the knack of this skill, from the following conjunction with figs. that is described in detail, the present invention can more clearly be understood, and its above-mentioned and other purpose and advantage will become more obvious.
Description of drawings
Fig. 1 is the schematic flow sheet of the embodiment of the invention.
Fig. 2 is the device for carrying out said of Fig. 1.And
Fig. 3 is the variations in temperature schematic diagram of two different temperatures processing procedures.
Embodiment
Fig. 1 shows a process of using the processing procedure of boiler tube, and Fig. 2 carries out the employed schematic representation of apparatus of this processing procedure.As shown in fig. 1, change with the height of temperature and to distinguish, this processing procedure comprises three phases, during steps A is to be equipped with year (charge), should remain on boiler tube one proper temperature this moment, and make gas flow maintain a fixing value, it is decided to be zero point, the condition in this stage is taken as the standby condition of this processing procedure, then be written into (load) wafer at step B, the a large amount of heating of step C make temperature rise (ramp up) to desired value with certain speed then, step D waits to stablize the temperature of boiler tube and gas flow at an appropriate value, promptly finish the establishment of process conditions, step e is injected in the boiler tube gas to carry out main program, may be after finishing through the tempering (anneal) of step F, and step G reduces heating and makes temperature descend (rampdown) to suitable low temperature with certain speed then, step H takes out (unload) wafer, and step I stops carrying (discharge).
As shown in Figure 2, the device 10 that carries out aforementioned process comprises a boiler tube 12, supply to be written into brilliant boat (boat) 14 in it, carry wafer on the brilliant boat 14, boiler tube 12 outer configuration heaters 16 are around boiler tube 12, outer tube wall 17 helps insulation, the hot coupling 18 of tube wall installing flank of boiler tube 12, it is along vertical configuration of boiler tube 12, with the Temperature Distribution (profile) that detects boiler tube 12, the hot coupling 20 of adjacent heater 16 installing vents, to detect the duration and degree of heating, hot coupling 18 and 20 provides temperature signal 22 and 24 to a temperature controller 26 respectively, this device normally a microcontroller (micro controller) mat its control that a silicon controlled rectifier (SCR) 28 produces control signals 30 and the duration and degree of heating of adjusting heater 16, power supply 32 provides electric power to silicon controlled rectifier 28 through transformer 34.On the other hand, the gas 36 of flow rates controlled injects from the top of boiler tube 12, and it is the gas of sending here from gas input port 40 through flow controller 38 control, 42 is expelled to the gas outlet through the gas of boiler tube 12 from the below.
Monitoring of the present invention mainly is the stabilization sub stage after wafer is written into preceding preproduction phase and intensification.Fig. 3 shows the operating process schematic diagram of two different set process temperatures.Processing procedure P1 is when carrying fully, the temperature of boiler tube 12 is set T0 about 400 ℃, before wafer is written into, should keep stable the stable of heater 16 heat supplies that reach of boiler tube 12 temperature, utilize this moment the temperature signal 24 of hot coupling 20 to check that heater 16 is whether in a predetermined temperature range earlier, this scope is about set point ± 5 ℃, then utilize temperature that the temperature signal 22 of hot coupling 18 checks boiler tubes 12 more whether in a predetermined scope, this scope also is a set point ± 5 ℃, also check simultaneously the zero point of flow controller 38, its the value about set point ± 1% in, this stage can guarantee that the reference point of processing procedure reaches enough accuracy under the condition of setting, and in alternatively checking, outer hot coupling 18 and 20 can be guaranteed the consistency of surveillance equipment and obtain preferable control.The temperature of boiler tube 12 is set in for example 800 ℃ after intensification, check that hot coupling 18 is whether in a predetermined scope this moment, this scope is about set point ± 10 ℃, and with this duration and degree of heating of regulating and control heater 16 make simultaneously flow controller 38 set the working point ± 5% in, after treating that board is stable, injecting gas in main program, follow-up process is identical with known techniques.The control of another processing procedure P2 is also roughly the same, though the process temperatures of its main program than processing procedure P1 height, the stage before wafer is written into and heat up after stage also use identical control mode.The process conditions of the present invention and main program is irrelevant, its be processing procedure carries out before use more perfect inspect step, make can being found ahead of time unusually of furnace tube temperature and gas flow and prevented.
More than the narration done for preferred embodiment of the present invention be for illustrating purpose, accurately be disclosed form and be not intended to limit the present invention, based on above instruction or to make an amendment or change from embodiments of the invention study be possible, embodiment has the knack of this operator and utilizes the present invention to select in practical application with various embodiment and narrate for explaining orally principle of the present invention and allowing, and technological thought of the present invention is decided by claims and equalization thereof.
Claims (6)
1, the prevention method of a kind of semiconductor furnace tube temperature and gas flow anomalous event, this boiler tube by a heater around, the tube wall of this boiler tube and contiguous this heater are installed first and second hot coupling respectively, one temperature controller is regulated and control this heater according to this first and second hot coupling, reach the gas flow that a flow controller control imports this boiler tube, it is characterized in that comprising the following steps:
Inspect this second hot coupling whether in first temperature range:
Whether inspect this first hot coupling in second temperature range, and whether the zero point of inspecting this flow controller is in the first gas flow speed range;
Wafer is written in this boiler tube;
With the intensification of advancing the speed; And
Whether inspect this first hot coupling in the 3rd temperature range, and whether inspect this flow controller in the second gas flow speed range.
2, the prevention method of semiconductor furnace tube temperature according to claim 1 and gas flow anomalous event is characterized in that: this first temperature range is a set point ± 5 ℃.
3, the prevention method of semiconductor furnace tube temperature according to claim 1 and gas flow anomalous event is characterized in that: this second temperature range is a set point ± 5 ℃.
4, the prevention method of semiconductor furnace tube temperature according to claim 1 and gas flow anomalous event is characterized in that: this first gas flow speed range is this zero point ± 1%.
5, the prevention method of semiconductor furnace tube temperature according to claim 1 and gas flow anomalous event is characterized in that: the 3rd temperature range is a set point ± 10 ℃.
6, the prevention method of semiconductor furnace tube temperature according to claim 1 and gas flow anomalous event is characterized in that: this second gas flow speed range is a set point ± 5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031464556A CN1301534C (en) | 2003-07-15 | 2003-07-15 | Prevention methods for abnormal events of semiconductor furnace tube temperature and gas flow |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031464556A CN1301534C (en) | 2003-07-15 | 2003-07-15 | Prevention methods for abnormal events of semiconductor furnace tube temperature and gas flow |
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| Publication Number | Publication Date |
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| CN1571116A CN1571116A (en) | 2005-01-26 |
| CN1301534C true CN1301534C (en) | 2007-02-21 |
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| CNB031464556A Expired - Fee Related CN1301534C (en) | 2003-07-15 | 2003-07-15 | Prevention methods for abnormal events of semiconductor furnace tube temperature and gas flow |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101452818B (en) * | 2007-11-30 | 2010-04-07 | 中芯国际集成电路制造(上海)有限公司 | Measuring method capable of enhancing sintering temperature measurement accuracy for electrode sintering platform |
| CN102051601B (en) * | 2009-10-29 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | Thin film deposition method |
| CN106935531A (en) * | 2015-12-31 | 2017-07-07 | 无锡华润华晶微电子有限公司 | A kind of method of Equipment for Heating Processing and its treatment wafer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5746591A (en) * | 1996-08-15 | 1998-05-05 | Vanguard International Semiconductor Corporation | Semiconductor furnace for reducing particulates in a quartz tube and boat |
| US5875416A (en) * | 1996-01-23 | 1999-02-23 | Tokyo Electron Limited | Temperature adjusting method and apparatus therefor using at least two temperature sensors and a correction value |
| EP0967537A2 (en) * | 1994-01-21 | 1999-12-29 | FSI International, Inc. | Temperature control apparatus and method with recirculated coolant |
| WO2001080291A1 (en) * | 2000-04-17 | 2001-10-25 | Mezey James J Sr | Methods and apparatus for thermally processing wafers |
| US6583638B2 (en) * | 1999-01-26 | 2003-06-24 | Trio-Tech International | Temperature-controlled semiconductor wafer chuck system |
-
2003
- 2003-07-15 CN CNB031464556A patent/CN1301534C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0967537A2 (en) * | 1994-01-21 | 1999-12-29 | FSI International, Inc. | Temperature control apparatus and method with recirculated coolant |
| US5875416A (en) * | 1996-01-23 | 1999-02-23 | Tokyo Electron Limited | Temperature adjusting method and apparatus therefor using at least two temperature sensors and a correction value |
| US5746591A (en) * | 1996-08-15 | 1998-05-05 | Vanguard International Semiconductor Corporation | Semiconductor furnace for reducing particulates in a quartz tube and boat |
| US6583638B2 (en) * | 1999-01-26 | 2003-06-24 | Trio-Tech International | Temperature-controlled semiconductor wafer chuck system |
| WO2001080291A1 (en) * | 2000-04-17 | 2001-10-25 | Mezey James J Sr | Methods and apparatus for thermally processing wafers |
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| CN1571116A (en) | 2005-01-26 |
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