CN1300359C - Compact titanium carbon silicide-titanium diboride composite block material and producing process thereof - Google Patents
Compact titanium carbon silicide-titanium diboride composite block material and producing process thereof Download PDFInfo
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Abstract
本发明是致密钛硅化碳-二硼化钛复合块体材料及其制备方法。该材料的原料组成及成分范围为:以Ti粉、Si粉、TiC粉、TiB2和铝粉为原料,五种原料的摩尔比是n(Ti)∶n(Si)∶n(TiC)∶n(TiB2)∶n(Al)=1∶(0.85~1.15)∶2∶(0.15~0.6)∶(0.04~0.12)。该材料制备包括以下步骤:按工艺要求称取Ti粉、Si粉、TiC粉、TiB2和铝粉,混合均匀后,置于石墨模具中,在热压烧结系统中的氩气环境下进行烧结。烧结步骤为:以60~180℃/min的升温速率升至1100~1250℃,保温30~120分钟,压力为20~80MPa。本发明的工艺简单,其产品性能优异。
The invention is a dense titanium silicide carbon-titanium diboride composite bulk material and a preparation method thereof. The raw material composition and composition range of the material are as follows: Ti powder, Si powder, TiC powder, TiB2 and aluminum powder are used as raw materials, and the molar ratio of the five raw materials is n(Ti):n(Si):n(TiC): n(TiB 2 ):n(Al)=1:(0.85-1.15):2:(0.15-0.6):(0.04-0.12). The preparation of the material includes the following steps: Weigh Ti powder, Si powder, TiC powder, TiB2 and aluminum powder according to the process requirements, mix them evenly, place them in a graphite mold, and sinter in an argon environment in a hot pressing sintering system . The sintering step is: raising the temperature to 1100-1250° C. at a rate of 60-180° C./min, keeping the temperature for 30-120 minutes, and the pressure at 20-80 MPa. The process of the invention is simple, and the product performance is excellent.
Description
技术领域technical field
本发明涉及建筑材料领域,特别是涉及一种致密钛硅化碳-二硼化钛复合块体材料的制备方法。The invention relates to the field of building materials, in particular to a method for preparing a dense titanium silicide carbon-titanium diboride composite block material.
背景技术Background technique
钛硅化碳(Ti3SiC2)是上世纪九十年代才被发现的新型层状三元化合物。它兼具有金属和陶瓷的许多优点,如优异的导电、导热性,可加工性,良好的抗破坏能力,高熔点,高模量,高强度和低密度等。这是一种能广泛应用于电子信息、新能源、航空航天等高技术领域的新型结构/功能材料。但Ti3SiC2的制备困难一直限制了它的研究和应用。文献(1)以TiH2、Si和石墨为原料,在2000℃下进行化学反应合成了Ti3SiC2。文献(2,3)分别用SiCl4、TiCl4、CCl4、H2和TiCl4、SiCl4、CH4、H2为原料,用气相沉积法制备了Ti3SiC2薄膜。文献(4)以Ti、Si和碳黑为原料,通过自蔓延高温反应合成Ti3SiC2,反应产物中存在大量的杂质相。文献(5)以Ti、Si和碳黑为原料,用电弧熔化法和后退火处理制备Ti3SiC2块体材料,但反应产物杂质含量高,反应温度不易精确控制。文献(6)采用热等静压工艺,以Ti、SiC和石墨为原料,制备了致密的单相Ti3SiC2块体材料,但制备工艺相当复杂。文献(7)以Ti、Si和石墨为原料,并加入重量为4%的NaF作反应助剂,采用热压工艺制备了Ti3SiC2块体材料,产物中含有大量的TiC。文献(8)采用放电等离子烧结(SPS)新工艺,以Ti、Si和TiC为原料,得到了纯度达98%的Ti3SiC2块体材料。但Ti3SiC2的硬度较低(3~5GPa),耐硝酸性能较差,极大地限制了其作为结构材料和功能材料使用范围。Titanium silicide carbon (Ti 3 SiC 2 ) is a new layered ternary compound discovered in the 1990s. It has many advantages of both metals and ceramics, such as excellent electrical and thermal conductivity, machinability, good damage resistance, high melting point, high modulus, high strength and low density, etc. This is a new type of structural/functional material that can be widely used in high-tech fields such as electronic information, new energy, and aerospace. But the difficulty of preparing Ti 3 SiC 2 has limited its research and application. Document (1) used TiH 2 , Si and graphite as raw materials to synthesize Ti 3 SiC 2 by chemical reaction at 2000°C. Literature (2, 3) used SiCl 4 , TiCl 4 , CCl 4 , H 2 and TiCl 4 , SiCl 4 , CH 4 , and H 2 as raw materials respectively, and prepared Ti 3 SiC 2 thin films by vapor deposition. Document (4) uses Ti, Si and carbon black as raw materials to synthesize Ti 3 SiC 2 by self-propagating high-temperature reaction, and there are a large number of impurity phases in the reaction product. Literature (5) used Ti, Si and carbon black as raw materials to prepare Ti 3 SiC 2 bulk material by arc melting method and post-annealing treatment, but the reaction product has high impurity content and the reaction temperature is not easy to control accurately. Document (6) adopts the hot isostatic pressing process to prepare dense single-phase Ti 3 SiC 2 bulk materials with Ti, SiC and graphite as raw materials, but the preparation process is quite complicated. Document (7) used Ti, Si and graphite as raw materials, and added 4% NaF as reaction aid, and prepared Ti 3 SiC 2 bulk material by hot pressing process, and the product contained a large amount of TiC. Document (8) adopts a new process of spark plasma sintering (SPS), using Ti, Si and TiC as raw materials, and obtains a Ti 3 SiC 2 bulk material with a purity of 98%. However, the hardness of Ti 3 SiC 2 is low (3-5GPa), and its resistance to nitric acid is poor, which greatly limits its use as structural and functional materials.
发明内容Contents of the invention
本发明所要解决的技术问题是:提供一种致密钛硅化碳-二硼化钛复合块体材料的制备方法。所制得的产品兼具钛硅化碳和二硼化钛两者的优点,从而克服现有技术中存在的问题。The technical problem to be solved by the present invention is to provide a method for preparing a dense titanium silicide carbon-titanium diboride composite bulk material. The obtained product has both the advantages of titanium silicide and titanium diboride, thereby overcoming the problems in the prior art.
本发明解决其技术问题所采用的技术方案是:The technical solution adopted by the present invention to solve its technical problems is:
致密钛硅化碳-二硼化钛复合块体材料的制备方法,其步骤包括:A method for preparing a dense titanium silicide carbon-titanium diboride composite block material, the steps comprising:
1)称取Ti粉、Si粉、TiC粉、TiB2和铝粉,五种原料的摩尔比为n(Ti)∶n(Si)∶n(TiC)∶n(TiB2)∶n(Al)=1∶(0.85~1.15)∶2∶(0.15~0.6)∶(0.04~0.12)。1) Weigh Ti powder, Si powder, TiC powder, TiB 2 and aluminum powder, and the molar ratio of the five raw materials is n(Ti):n(Si):n(TiC):n(TiB 2 ):n(Al )=1:(0.85~1.15):2:(0.15~0.6):(0.04~0.12).
2)将称取的原料粉末混合均匀后,置于石墨模具中,在热压烧结系统中的氩气环境下进行烧结。2) Mix the weighed raw material powders evenly, place them in a graphite mold, and sinter in an argon atmosphere in a hot-press sintering system.
3)烧结步骤为:以60~180℃/min的升温速率升至1100~1250℃,保温30~120分钟,施加的压力为20~80MPa。3) The sintering step is: raising the temperature to 1100-1250° C. at a rate of 60-180° C./min, keeping the temperature for 30-120 minutes, and applying a pressure of 20-80 MPa.
二硼化钛(TiB2)是一种具有高熔点(2790℃),高硬度(34GPa),耐腐蚀、抗氧化的特点,同时具有良好的导电和导热性能,其在高温结构材料、耐磨、耐腐蚀以及电气材料中有着广泛的应用前景,更为重要的是它的晶体结构Ti3SiC2一样,均为六方层状结构,热膨胀系数相近,因此在Ti3SiC2中引入适量的TiB2颗粒将有助于改善Ti3SiC2材料的性能,获得兼具两者优点的复合材料。Titanium diboride (TiB 2 ) is a kind of high melting point (2790°C), high hardness (34GPa), corrosion resistance, oxidation resistance, and good electrical and thermal conductivity. It is used in high-temperature structural materials, wear-resistant It has broad application prospects in corrosion resistance and electrical materials, and more importantly, its crystal structure is the same as that of Ti 3 SiC 2 , both of which are hexagonal layered structures with similar thermal expansion coefficients . 2 particles will help to improve the properties of Ti 3 SiC 2 materials and obtain composite materials with both advantages.
本发明的实质是利用一种热压反应制备Ti3SiC2材料的基础上,添加不同体积比的TiB2颗粒。由于Al的熔点低,在较低温度下,Al会熔化并和Si一起形成的Al-Si液相合金,促进的反应合成,同时增加了Ti3SiC2-TiB2的致密度,由Archimedes法测得Ti3SiC2-TiB2块体材料的致密度达到99%。The essence of the invention is to add TiB 2 particles with different volume ratios on the basis of preparing Ti 3 SiC 2 material by using a hot-press reaction. Due to the low melting point of Al, at a lower temperature, Al will melt and form an Al-Si liquid phase alloy with Si, which promotes the reaction synthesis and increases the density of Ti 3 SiC 2 -TiB 2 , by the Archimedes method It is measured that the density of the Ti 3 SiC 2 -TiB 2 bulk material reaches 99%.
本发明的创新之处在于掺加少量的铝抑制Ti-Si化合物的生成,同时原始粉料中以TiC取代元素单质粉Ti和C可以减少反应产物中TiC的含量。整个制备过程选用的原材料简单,充分利用了原位反应优点和热压烧结工艺的特点,合成性能优异的Ti3SiC2-TiB2块体材料。The innovation of the present invention lies in the addition of a small amount of aluminum to suppress the formation of Ti-Si compounds, and at the same time, replacing elemental powders Ti and C with TiC in the original powder can reduce the content of TiC in the reaction product. The whole preparation process uses simple raw materials, fully utilizes the advantages of in-situ reaction and the characteristics of hot pressing sintering process, and synthesizes Ti 3 SiC 2 -TiB 2 bulk material with excellent performance.
附图说明Description of drawings
附图为热压工艺烧结Ti3SiC2/TiB2试样的X射线衍射图谱。对照粉末衍射标准联合委员会制定的标准JCPDS卡片,Ti3SiC2的标准卡片号为740310号,以及TiB2的标准卡片号70275号可以知道,合成的复合材料中只有Ti3SiC2和TiB2两种物质,没有其它的物质生成。The accompanying drawing is the X-ray diffraction pattern of the Ti 3 SiC 2 /TiB 2 sample sintered by hot pressing process. Compared with the standard JCPDS card formulated by the Joint Committee on Powder Diffraction Standards, the standard card number of Ti 3 SiC 2 is 740310, and the standard card number of TiB 2 is 70275. It can be known that only Ti 3 SiC 2 and TiB 2 are in the synthesized composite materials. one substance, and no other substance is produced.
具体实施方式Detailed ways
下面结合实施例及附图对本发明作进一步说明。The present invention will be further described below in conjunction with the embodiments and accompanying drawings.
本发明涉及一种致密钛硅化碳-二硼化钛复合块体材料,其原料组成及成分范围为:以Ti粉、Si粉、TiC粉、TiB2和铝粉为原料,五种原料的摩尔比是n(Ti)∶n(Si)∶n(TiC)∶n(TiB2)∶n(Al)=1∶(0.85~1.15)∶2∶(0.15~0.6)∶(0.04~0.12)。The invention relates to a dense titanium silicide carbon-titanium diboride composite block material. The raw material composition and composition range are as follows: Ti powder, Si powder, TiC powder, TiB 2 and aluminum powder are used as raw materials, and the moles of five raw materials The ratio is n(Ti):n(Si):n(TiC):n(TiB 2 ):n(Al)=1:(0.85-1.15):2:(0.15-0.6):(0.04-0.12).
本发明制备致密钛硅化碳-二硼化钛复合块体材料的方法是,包括以下步骤:The method for preparing dense titanium silicide carbon-titanium diboride composite block material of the present invention comprises the following steps:
1)称取Ti粉、Si粉、TiC粉、TiB2和铝粉,五种原料的摩尔比为n(Ti)∶n(Si)∶n(TiC)∶n(TiB2)∶n(Al)=1∶(0.85~1.15)∶2∶(0.15~0.6)∶(0.04~0.12)。1) Weigh Ti powder, Si powder, TiC powder, TiB 2 and aluminum powder, and the molar ratio of the five raw materials is n(Ti):n(Si):n(TiC):n(TiB 2 ):n(Al )=1:(0.85~1.15):2:(0.15~0.6):(0.04~0.12).
2)将称取的原料粉末混合均匀后,置于石墨模具中,在热压烧结系统中的氩气环境下进行烧结。2) Mix the weighed raw material powders evenly, place them in a graphite mold, and sinter in an argon atmosphere in a hot-press sintering system.
3)烧结步骤为:以60~180℃/min的升温速率升至1100~1250℃,保温30~120分钟,压力为20~80MPa。3) The sintering step is: raising the temperature to 1100-1250° C. at a rate of 60-180° C./min, keeping the temperature for 30-120 minutes, and the pressure at 20-80 MPa.
实施例1Example 1
原料粉末按摩尔比为n(Ti)∶n(Si)∶n(TiC)∶n(TiB2)∶n(Al)=1∶0.85∶2∶0.15∶0.04;混合均匀,放入石墨模具中,在热压烧结系统,氩气保护中进行烧结。升温速度为80℃/min,烧结温度为1100℃,压力为30MPa,保温60分钟。块体材料的致密度为99%,Ti3SiC2含量为90%。在INSTRON-1195万能力学实验机上测得:材料的抗压强度≥750MPa,三点弯曲强度σb≥470MPa,KIC≥8MPa·m1/2。The molar ratio of raw material powder is n(Ti):n(Si):n(TiC):n(TiB 2 ):n(Al)=1:0.85:2:0.15:0.04; mix well and put into graphite mold , Sintered in a hot press sintering system under argon protection. The heating rate is 80°C/min, the sintering temperature is 1100°C, the pressure is 30MPa, and the temperature is kept for 60 minutes. The bulk material has a density of 99% and a Ti 3 SiC 2 content of 90%. Measured on the INSTRON-1195 million mechanical testing machine: the compressive strength of the material is ≥750MPa, the three-point bending strength σ b is ≥470MPa, and the K IC is ≥8MPa·m 1/2 .
实施例2Example 2
原料粉末按摩尔比为n(Ti)∶n(Si)∶n(TiC)∶n(TiB2)∶n(Al)=1∶1.15∶2∶0.6∶0.12;混合均匀,放入石墨模具中,在放电等离子烧结的真空系统中进行烧结。升温速度为80℃/min,烧结温度为1250℃,压力为60MPa,保温120分钟。块体材料的致密度为99.5%,Ti3SiC2含量为88%。在INSTRON-1195万能力学实验机上测得,材料的抗压强度≥750MPa,三点弯曲强度σb≥470MPa,KIC≥8MPa·m1/2。The molar ratio of raw material powder is n(Ti):n(Si):n(TiC):n(TiB 2 ):n(Al)=1:1.15:2:0.6:0.12; mix well and put into graphite mold , Sintering is carried out in a vacuum system of spark plasma sintering. The heating rate is 80°C/min, the sintering temperature is 1250°C, the pressure is 60MPa, and the temperature is kept for 120 minutes. The bulk material has a density of 99.5% and a Ti 3 SiC 2 content of 88%. Measured on the INSTRON-1195 million mechanical testing machine, the compressive strength of the material is ≥750MPa, the three-point bending strength σ b ≥470MPa, and the K IC ≥8MPa·m 1/2 .
实施例3Example 3
原料粉末按摩尔比为n(Ti)∶n(Si)∶n(TiC)∶n(TiB2)∶n(Al)=1∶1.0∶2∶0.4∶0.08;混合均匀,放入石墨模具中,在放电等离子烧结的真空系统中进行烧结。升温速度为80℃/min,烧结温度为1250℃,压力为60MPa,保温120分钟。块体材料的致密度为99.5%,Ti3SiC2含量为88%。在INSTRON-1195万能力学实验机上测得,材料的抗压强度≥750MPa,三点弯曲强度σb≥470MPa,KIC≥8MPa·m1/2。The molar ratio of raw material powder is n(Ti):n(Si):n(TiC):n(TiB 2 ):n(Al)=1:1.0:2:0.4:0.08; mix well and put into graphite mold , Sintering is carried out in a vacuum system of spark plasma sintering. The heating rate is 80°C/min, the sintering temperature is 1250°C, the pressure is 60MPa, and the temperature is kept for 120 minutes. The bulk material has a density of 99.5% and a Ti 3 SiC 2 content of 88%. Measured on the INSTRON-1195 million mechanical testing machine, the compressive strength of the material is ≥750MPa, the three-point bending strength σ b ≥470MPa, and the K IC ≥8MPa·m 1/2 .
本专利参考文献:References for this patent:
[1]Jeitschko W,and Nowotny H.Die Kristallstructur von Ti3SiC2-Ein NeuerKomplxcarbid-Typ.Monatsh.Fur Chem.,1967,98:329-37[1] Jeitschko W, and Nowotny H. Die Kristallstructur von Ti 3 SiC 2 -Ein NeuerKomplxcarbid-Typ. Monatsh. Fur Chem., 1967, 98: 329-37
[2]Nickl J J,Schweitzer K K,Luxenberg P.Gasphasenabscheidung im SystemeTi-C-Si,J Less Common Metals,,1972,26:283[2] Nickl J J, Schweitzer K K, Luxenberg P.Gasphasenabscheidung im Systeme Ti-C-Si, J Less Common Metals,, 1972, 26: 283
[3]Racault C,Langlais F,Bernard C.On the Chemical Vapor Deposition ofTi3SiC2 from TiCl4-SiCl4-CH4-H2 Gas Mixtures:Part II an experimental approach,J.Mater.Sci.,1994,29:5023[3] Racault C, Langlais F, Bernard C. On the Chemical Vapor Deposition of Ti 3 SiC 2 from TiCl 4 -SiCl 4 -CH 4 -H 2 Gas Mixtures: Part II an experimental approach, J.Mater.Sci., 1994 ,29:5023
[4]Pampuch R,Lis J,Stobierski L,et al.Solid Combustion Synthesis of Ti3SiC2,J Eur Ceram Soc,1989,5:283[4] Pampuch R, Lis J, Stobierski L, et al. Solid Combustion Synthesis of Ti 3 SiC 2 , J Eur Ceram Soc, 1989, 5: 283
[5]Arunajatesan S,Carim A.Synthesis of Ti3SiC2,J.Amer.Cer.Soc.,1995,78:667[5] Arunajatesan S, Carim A. Synthesis of Ti 3 SiC 2 , J. Amer. Cer. Soc., 1995, 78:667
[6]Barsoum M W,El-Raghy T,Synthesis Characterization of a RemarkableCeramic-Ti3SiC2,J.Amer.Cer.Soc.,1996,79(7):1953-1956[6] Barsoum M W, El-Raghy T, Synthesis Characterization of a Remarkable Ceramic-Ti3SiC2, J.Amer.Cer.Soc., 1996, 79(7): 1953-1956
[7]Zhou Y C,Sun Z M and Yu B H.Microstructure of Ti3SiC2 prepared by thein-situ hot pressing/solid-liquid reaction process,Z.Metallkd.2000,91(11):937-941[7] Zhou Y C, Sun Z M and Yu B H. Microstructure of Ti 3 SiC 2 prepared by the in-situ hot pressing/solid-liquid reaction process, Z. Metallkd. 2000, 91(11): 937-941
[8]Gao N F,Lib J T,Zhange D,Miyamoto Y.Rapid synthesis of dense Ti3SiC2by spark plasma sintering,J.Euro.Ceram.Soc.,2002,22:2365-2370[8] Gao N F, Lib J T, Zhange D, Miyamoto Y. Rapid synthesis of dense Ti 3 SiC 2 by spark plasma sintering, J.Euro.Ceram.Soc., 2002, 22:2365-2370
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