CN1399798A - 多层物体调温处理的装置和方法和多层物体 - Google Patents
多层物体调温处理的装置和方法和多层物体 Download PDFInfo
- Publication number
- CN1399798A CN1399798A CN00813743.9A CN00813743A CN1399798A CN 1399798 A CN1399798 A CN 1399798A CN 00813743 A CN00813743 A CN 00813743A CN 1399798 A CN1399798 A CN 1399798A
- Authority
- CN
- China
- Prior art keywords
- layer
- energy
- multilayer
- container
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0036—Heat treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
- B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Laminated Bodies (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Chemical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19936081A DE19936081A1 (de) | 1999-07-30 | 1999-07-30 | Vorrichtung und Verfahren zum Temperieren eines Mehrschichtkörpers, sowie ein unter Anwendung des Verfahrens hergestellter Mehrschichtkörper |
| DE19936081.2 | 1999-07-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1399798A true CN1399798A (zh) | 2003-02-26 |
| CN1263166C CN1263166C (zh) | 2006-07-05 |
Family
ID=7916741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00813743.9A Expired - Lifetime CN1263166C (zh) | 1999-07-30 | 2000-07-31 | 多层物体退火处理的装置和方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6717112B1 (zh) |
| EP (1) | EP1258043B1 (zh) |
| JP (1) | JP5361106B2 (zh) |
| CN (1) | CN1263166C (zh) |
| AU (1) | AU781422B2 (zh) |
| DE (1) | DE19936081A1 (zh) |
| ES (1) | ES2691644T3 (zh) |
| WO (1) | WO2001009961A2 (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108701629A (zh) * | 2015-12-10 | 2018-10-23 | 商先创国际股份有限公司 | 基板的热处理装置及方法以及基板的接收单元 |
| CN113574683A (zh) * | 2019-01-31 | 2021-10-29 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种用于薄膜太阳能模块的多层体的热处理的装置、设备和方法 |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2846786B1 (fr) * | 2002-11-05 | 2005-06-17 | Procede de recuit thermique rapide de tranches a couronne | |
| DE10260672A1 (de) * | 2002-12-23 | 2004-07-15 | Mattson Thermal Products Gmbh | Verfahren und Vorrichtung zum thermischen Behandeln von scheibenförmigen Substraten |
| DE102005062977B3 (de) * | 2005-12-28 | 2007-09-13 | Sulfurcell Solartechnik Gmbh | Verfahren und Vorrichtung zur Umsetzung metallischer Vorläuferschichten zu Chalkopyritschichten von CIGSS-solarzellen |
| US8389852B2 (en) * | 2006-02-22 | 2013-03-05 | Guardian Industries Corp. | Electrode structure for use in electronic device and method of making same |
| EP1855324A1 (de) * | 2006-05-12 | 2007-11-14 | Applied Materials GmbH & Co. KG | Substratträger aus glaskeramischen Material |
| DE102008022784A1 (de) | 2008-05-08 | 2009-11-12 | Avancis Gmbh & Co. Kg | Vorrichtung und Verfahren zum Tempern von Gegenständen in einer Behandlungskammer |
| WO2010060646A1 (de) * | 2008-11-28 | 2010-06-03 | Volker Probst | Verfahren zum herstellen von halbleiterschichten bzw. von mit elementarem selen und/oder schwefel behandelten beschichteten substraten, insbesondere flächigen substraten |
| US20100068898A1 (en) | 2008-09-17 | 2010-03-18 | Stephen Moffatt | Managing thermal budget in annealing of substrates |
| US8314369B2 (en) * | 2008-09-17 | 2012-11-20 | Applied Materials, Inc. | Managing thermal budget in annealing of substrates |
| TWI418047B (zh) * | 2009-01-07 | 2013-12-01 | 財團法人工業技術研究院 | Ib-iiia-via2化合物半導體薄膜之製造裝置 |
| US20100304527A1 (en) * | 2009-03-03 | 2010-12-02 | Peter Borden | Methods of thermal processing a solar cell |
| US20120006263A1 (en) * | 2009-08-06 | 2012-01-12 | Sumitomo Electric Industries, Ltd. | Film deposition apparatus |
| DE102009053532B4 (de) * | 2009-11-18 | 2017-01-05 | Centrotherm Photovoltaics Ag | Verfahren und Vorrichtung zur Herstellung einer Verbindungshalbleiterschicht |
| DE102009047483A1 (de) | 2009-12-04 | 2011-06-09 | Sulfurcell Solartechnik Gmbh | Vorrichtung und Verfahren zur Erzeugung von Chalkopyrit-Absorberschichten in Solarzellen |
| DE102010008084A1 (de) | 2010-02-15 | 2011-08-18 | Leybold Optics GmbH, 63755 | Vorrichtung zur thermischen Behandlung von Substraten |
| US20110203655A1 (en) * | 2010-02-22 | 2011-08-25 | First Solar, Inc. | Photovoltaic device protection layer |
| EP2360720A1 (de) * | 2010-02-23 | 2011-08-24 | Saint-Gobain Glass France | Vorrichtung zum Positionieren von mindestens zwei Gegenständen, Anordnungen, insbesondere Mehrschichtkörperanordnungen, Anlage zum Prozessieren, insbesondere zum Selenisieren, von Gegenständen, Verfahren zum Positionieren von mindestens zwei Gegenständen |
| TW201203584A (en) | 2010-07-02 | 2012-01-16 | Adpv Technology Ltd | Rapid thermal process heating system and method thereof |
| US20150171235A1 (en) * | 2012-07-19 | 2015-06-18 | Saint-Gobain Glass France | Avoidance of glass bending in thermal processes |
| DE102020208184B4 (de) * | 2020-06-30 | 2025-02-20 | Singulus Technologies Aktiengesellschaft | Heizsystem und Verfahren zum Aufheizen von großflächigen Substraten |
| DE102021004175B3 (de) | 2021-08-13 | 2022-12-01 | Singulus Technologies Aktiengesellschaft | Abstandsvorrichtung für Heizsystem zum Aufheizen von großflächigen Substraten, Heizsystem und Aufheizverfahren |
| CA3143926A1 (en) * | 2021-08-19 | 2023-02-19 | James William Masten | Thermophysical process for the heat treatment of glass |
| EP4341987B1 (en) * | 2022-06-23 | 2025-06-18 | Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. | Energy-saving heat treatment device for metal substrate in corrosive gas |
| CN119803083B (zh) * | 2025-01-02 | 2025-11-11 | 中冶长天国际工程有限责任公司 | 一种分层布料烧结及冷却的方法和系统 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57183041A (en) * | 1981-05-06 | 1982-11-11 | Nec Corp | Annealing method for chemical semiconductor |
| US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
| JPS63257221A (ja) * | 1987-04-14 | 1988-10-25 | Nec Corp | ランプアニ−ル装置 |
| JPH01179309A (ja) * | 1987-12-30 | 1989-07-17 | Tokyo Electron Ltd | 加熱法 |
| US5011794A (en) * | 1989-05-01 | 1991-04-30 | At&T Bell Laboratories | Procedure for rapid thermal annealing of implanted semiconductors |
| JPH0812847B2 (ja) * | 1991-04-22 | 1996-02-07 | 株式会社半導体プロセス研究所 | 半導体製造装置及び半導体装置の製造方法 |
| JP3002013B2 (ja) * | 1991-06-04 | 2000-01-24 | 松下技研株式会社 | 薄膜および多層膜の製造方法およびその製造装置 |
| DE59309438D1 (de) | 1992-09-22 | 1999-04-15 | Siemens Ag | Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat |
| JPH0778830A (ja) * | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 半導体製造装置 |
| JP2825756B2 (ja) * | 1994-05-27 | 1998-11-18 | シャープ株式会社 | 薄膜el素子の製造方法および製造装置 |
| JP2875768B2 (ja) * | 1994-11-30 | 1999-03-31 | 新日本無線株式会社 | 半導体基板の熱処理方法 |
| US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
| US5851929A (en) * | 1996-01-04 | 1998-12-22 | Micron Technology, Inc. | Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source |
| DE19711702C1 (de) * | 1997-03-20 | 1998-06-25 | Siemens Ag | Anordnung zur Bearbeitung einer Substratscheibe und Verfahren zu deren Betrieb |
| GB9717182D0 (en) * | 1997-08-13 | 1997-10-22 | Glaverbel | Copper mirrors |
| US6173116B1 (en) * | 1997-12-19 | 2001-01-09 | U.S. Philips Corporation | Furnace for rapid thermal processing |
| US6171982B1 (en) * | 1997-12-26 | 2001-01-09 | Canon Kabushiki Kaisha | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
-
1999
- 1999-07-30 DE DE19936081A patent/DE19936081A1/de not_active Ceased
-
2000
- 2000-07-31 AU AU74020/00A patent/AU781422B2/en not_active Ceased
- 2000-07-31 US US10/048,419 patent/US6717112B1/en not_active Expired - Lifetime
- 2000-07-31 WO PCT/DE2000/002523 patent/WO2001009961A2/de not_active Ceased
- 2000-07-31 EP EP00962177.2A patent/EP1258043B1/de not_active Expired - Lifetime
- 2000-07-31 JP JP2001514489A patent/JP5361106B2/ja not_active Expired - Lifetime
- 2000-07-31 ES ES00962177.2T patent/ES2691644T3/es not_active Expired - Lifetime
- 2000-07-31 CN CN00813743.9A patent/CN1263166C/zh not_active Expired - Lifetime
-
2003
- 2003-10-27 US US10/692,728 patent/US6884968B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108701629A (zh) * | 2015-12-10 | 2018-10-23 | 商先创国际股份有限公司 | 基板的热处理装置及方法以及基板的接收单元 |
| CN113574683A (zh) * | 2019-01-31 | 2021-10-29 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种用于薄膜太阳能模块的多层体的热处理的装置、设备和方法 |
| CN113574683B (zh) * | 2019-01-31 | 2025-02-14 | 中建材玻璃新材料研究院集团有限公司 | 一种用于薄膜太阳能模块的多层体的热处理的装置、设备和方法 |
| US12490543B2 (en) | 2019-01-31 | 2025-12-02 | Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. | Arrangement, device, and method for heat treating a multilayer body |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1258043A2 (de) | 2002-11-20 |
| CN1263166C (zh) | 2006-07-05 |
| EP1258043B1 (de) | 2018-07-18 |
| ES2691644T3 (es) | 2018-11-28 |
| JP5361106B2 (ja) | 2013-12-04 |
| US6884968B2 (en) | 2005-04-26 |
| AU781422B2 (en) | 2005-05-19 |
| JP2003519441A (ja) | 2003-06-17 |
| AU7402000A (en) | 2001-02-19 |
| DE19936081A1 (de) | 2001-02-08 |
| US20040087172A1 (en) | 2004-05-06 |
| US6717112B1 (en) | 2004-04-06 |
| WO2001009961A3 (de) | 2002-09-19 |
| WO2001009961A2 (de) | 2001-02-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SHELL YANGGUANG CO., LTD. Free format text: FORMER OWNER: SIEMENS AG Effective date: 20041001 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20041001 Address after: Munich, Germany Applicant after: Siemens Und Shell Solar GmbH Address before: Munich, Germany Applicant before: Siemens AG |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHELL RENEWABLE SOURCES CO., LTD. Free format text: FORMER OWNER: SHELL YANGGUANG CO., LTD. Effective date: 20080215 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20080215 Address after: hamburg Patentee after: Shell Renewable Energy Co Ltd Address before: Munich, Germany Patentee before: Siemens Und Shell Solar GmbH |
|
| CX01 | Expiry of patent term |
Granted publication date: 20060705 |
|
| CX01 | Expiry of patent term |