CN1391111A - 集成光学部件的非热敏化 - Google Patents
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
- G02B6/12026—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence
- G02B6/12028—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence based on a combination of materials having a different refractive index temperature dependence, i.e. the materials are used for transmitting light
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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Abstract
本发明涉及集成光学部件的非热敏化。与波导自身相比，本发明的基本思路是在不受副作用损害的情况下利用由聚合物构成的包层的不同温度依赖特性。确实，在基于本发明的包层和波导之间插入一个额外的涂层当包层出现在波导中时尤其限制了一个模块与上述包层的重叠。
Description
技术领域
本发明涉及一个如权利要求1的前序部分所述的光学模块。
背景技术
通常以使用特定施主涂上一个芯层的方式得到在诸如相控阵列(PHASAR)，星型耦合器或分接型耦合器(tap coupler)的光学模块中实现的光波导。这个芯层被涂在一个缓冲层上，通常通过在基底(Si)上进行高压氧化来生长出比如由硅酸盐(SiO2)构成的缓冲层。这种缓冲层将芯层与基底隔离开，从而表现出非常高的折射率。通过在芯层上进行干刻蚀并且之后包上一个几微米厚、通常由掺杂硅酸盐玻璃形成的包层来构成光波导。
理想情况下，具有这种光波导的光学模块的操作在大范围的环境条件下应当是可预测的和一致的。然而不幸的是，这种设备的操作性能实际受到设备周围的环境温度变化的显著影响。更具体地讲，由于两个原因，这种现有光学模块设计的波长谱随温度变化而偏移。第一个原因是dn/dT不等于零，其中n表示波导材料折射率，第二个原因是热膨胀，即dL/dT同样不等于零，其中L表示长度。
目前，某些被用于建立对温度变化不敏感的光学模块的技术使用了加热器或利用温度决定的张力的机械控制装置。不幸的是，这种设计增加了这种光学模块的复杂度和体积，并且还降低了机械稳定性。除此之外，这种设计甚至不能适用于难以得到供电的加热器。
一种现有的可选方案是用具有大的负折射率系数的聚合物材料替代硅包层，从而通过热系数的补偿造成部件的非热敏化。在US6,137,939中公开了一个具有降低的涉温频谱偏移的波导选通路由器(WGR)，其中通过使用聚合物取代核心区域部分来达到非热敏化。与波导的其它部分的特性相反，随着温度的增加上述部分的折射率反而降低，因而实现了补偿。
但是由于必须阻断光波导，这些解决方案也暴露出某些在界面上带来可靠性问题的缺点。硅波导与聚合物材料之间的临界界面以及掺入的聚合物中可能的自由空间传播导致损耗增加，其部分原因是接收方聚合物/硅界面上的模式失配。掺入聚合物所需的后处理步骤导致制造过程复杂度的增加。
发明内容
本发明的一个目标是开发具有这样的光波导的光学模块，即光波导表现出几乎完全非热敏化的行为特性并且造价仍然相对低廉。
通过一个如权利要求1所述的光学模块来实现这个目标。
与波导自身相比，本发明的基本思路是在不受副作用损害的情况下利用由聚合物构成的包层的不同温度依赖特性。确实，在基于本发明的包层和波导之间插入一个额外的涂层当包层出现在波导中时尤其限制了一个模场(mode field)与上述包层的重叠。波导自身没有一定要设计的交叉部分阻断或变化。除此之外，不必构造这种额外的涂层，但可以简单地将涂层沉积在已经构造到芯层内的波导上。有利的是，一个以基于本发明的额外涂层为特征的结构可以和其它减少可能存在的光波导残留双折射的装置配合使用。
在所附权利要求书中定义了本发明的其它有利特性，并且通过下面的描述和附图可以清晰理解特性。
附图说明
现在参照附图更详细地解释本发明的一个实施例。
图1a和1b是现有技术中已知的光波导截面，
图2公开了一个基于本发明的光波导截面，
图3a和3b是有关取决于两个基于本发明的不同结构的温度的中心通道波长的图例。
具体实施方式
图1a和1b示出了现有技术中已知的两个不同光波导的截面。在两种情况下，通常以这样的方式在一个芯层上构造光波导1，即，在缓冲层2上进行干刻蚀，然后涂上一个包层3。缓冲层和芯层均由硅(SiO2)构成，并且以特定方式掺杂芯层以便允许构造一个特定的光波导。在图1a的情况下包层3也由硅构成，从而产生其折射率具有正温度系数的光波导1。与此相反，在图1b的情况下包层3由聚合物构成，从而产生其折射率具有负温度系数的光波导1。
在包层由硅或聚合物构成的两种情况下，所得到的光波导1没有表现出独立于温度的行为特性，使得进行安全的操作现场运行所需的必要条件未被满足。
在图2中示出了一个基于本发明的光波导1的截面。在以特定方式掺杂的硅芯层内的硅缓冲层2上构造上述光波导1。在一个此处由聚合物构成的包层3覆盖之前，在已经构造的光波导1上沉积一个额外的涂层4。上述额外的涂层4可以由通过等离子体增强化学汽相沉积工艺(PECVD)沉积的SiO2构成。本发明没有被限制到上述不同层次的材料组份上。本发明主要基于的特征是上述额外涂层4的存在，其中选择上述额外涂层4使得该涂层至少部分补偿上述光波导1的温度依赖性。因而上述额外涂层的厚度可以因其构成成份及其折射率的不同而不同。
并且，一个出现在基于本发明的光波导中的模场5不再会过多重叠到包层3中。这将允许得到一个不受温度影响的光波导或具有很小温度依赖性的光波导。
在图3a和3b中针对通过PHASAR的一个光波导发送的中心波长λ0＝neffΔL/m，(neff，ΔL和m分别是波导的折射率，波导路径差和衍射级)示出了典型的温度依赖特性，其中上述光波导分别被涂上两个基于本发明的不同额外包层。通过比较一个标准PHASAR的中心通道波长(连续线性增加曲线)和一个基于本发明的PHASAR的中心通道波长可以发现上述额外涂层的的优点。在极化分解传输测量中求出后一种中心通道波长的值。因而在各个图例中示出了横电(位置较低的灰曲线)和横磁场(位置较高的黑曲线)。
图3a对应于由低折射率PECVD硅层构成的额外涂层4。低折射率PECVD硅层在1.55微米波长上折射率大约为1.447，并且其厚度大约为0.25微米。图3b对应于由高折射率PECVD硅层构成的额外涂层4。高折射率PECVD硅层在1.55微米波长上折射率大约为1.458，并且其厚度大约为0.72微米。这种对比清晰表明，温度对CWL带来的普通线性增长得到真实的改进。在基于本发明的光波导具有几乎独立于温度的行为特性的情况下可以得到至少有几十摄氏度的温度范围。
综合某些减少光波导中可能出现的残留双折射的装置对于设计具有基于本发明的光波导而言是有意义的。这在某些情况下允许优化光波导的非热敏化特性。通过使用在PHASAR区域的中心具有λ/2波片的TE/TM转换器可以提供这种补偿双折射的装置。但也可以方便地使用其它解决方案。
Claims (5)
1.光学模块，上述光学模块含有在一个芯层上构造的光波导(1)，上述芯层被覆盖在一个缓冲区(2)之上，而上述光波导被涂上一个包层(3)，其特征在于，在上述光波导(1)和上述包层(3)之间存在一个额外涂层(4)，上述额外涂层至少部分补偿上述光波导的温度依赖特性。
2.如权利要求1所述的光学模块，其特征在于，上述额外涂层(4)表现出一个正温度系数和适当的折射率，从而在一个模场(5)出现在上述光波导(1)中时减少了上述模场(5)与上述包层(3)的重叠。
3.如权利要求1或2所述的光学模块，其特征在于，上述芯层和上述包层(3)分别由硅和聚合物构成。
4.如权利要求1至3中的任一个所述的光学模块，其特征在于，上述额外涂层(4)由硅构成。
5.如权利要求1至4中的任一个所述的光学模块，其特征在于，上述光学模块还包括减少上述光波导的残留双折射的装置。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP01440163.2 | 2001-06-08 | ||
| EP01440163A EP1265084A1 (en) | 2001-06-08 | 2001-06-08 | Athermalization of integrated optical component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1391111A true CN1391111A (zh) | 2003-01-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN02120343A Pending CN1391111A (zh) | 2001-06-08 | 2002-05-23 | 集成光学部件的非热敏化 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20020186943A1 (zh) |
| EP (1) | EP1265084A1 (zh) |
| JP (1) | JP2003004961A (zh) |
| CN (1) | CN1391111A (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7006719B2 (en) | 2002-03-08 | 2006-02-28 | Infinera Corporation | In-wafer testing of integrated optical components in photonic integrated circuits (PICs) |
| US20040223712A1 (en) * | 2003-04-28 | 2004-11-11 | Ruolin Li | Technique for stabilizing laser wavelength and phase |
| JP2005128419A (ja) * | 2003-10-27 | 2005-05-19 | Nec Corp | 光導波路構造およびその作製方法 |
| US7146087B2 (en) | 2004-01-13 | 2006-12-05 | Lionix Bv | Low modal birefringent waveguides and method of fabrication |
| KR100597232B1 (ko) | 2004-06-02 | 2006-07-06 | 우리로광통신주식회사 | 온도무의존 배열도파로 격자형 파장 다중화/역다중화기 |
| KR100679229B1 (ko) | 2004-12-09 | 2007-02-05 | 한국전자통신연구원 | 평면형 광도파로 및 그의 제조 방법 |
| US11372157B2 (en) * | 2020-09-30 | 2022-06-28 | Nokia Solutions And Networks Oy | Integrated optical multiplexer / demultiplexer with thermal compensation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3501235B2 (ja) * | 1993-05-07 | 2004-03-02 | 日本電信電話株式会社 | 導波型光デバイス |
| WO1997011396A1 (en) * | 1995-09-20 | 1997-03-27 | Philips Electronics N.V. | Integrated optical circuit comprising a polarization convertor |
| EP1026526A1 (en) * | 1999-02-02 | 2000-08-09 | Corning Incorporated | Athermalized polymer overclad integrated planar optical waveguide device and its manufacturing method |
| US6487354B1 (en) * | 2001-05-01 | 2002-11-26 | Corning Incorporated | Design of low insertion loss, single-mode polymeric waveguides |
-
2001
- 2001-06-08 EP EP01440163A patent/EP1265084A1/en not_active Withdrawn
-
2002
- 2002-04-23 US US10/127,489 patent/US20020186943A1/en not_active Abandoned
- 2002-05-23 CN CN02120343A patent/CN1391111A/zh active Pending
- 2002-05-23 JP JP2002148898A patent/JP2003004961A/ja not_active Withdrawn
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| Publication number | Publication date |
|---|---|
| JP2003004961A (ja) | 2003-01-08 |
| US20020186943A1 (en) | 2002-12-12 |
| EP1265084A1 (en) | 2002-12-11 |
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