CN1377219A - Method for manufacturing a circuit device - Google Patents
Method for manufacturing a circuit device Download PDFInfo
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- CN1377219A CN1377219A CN01139310A CN01139310A CN1377219A CN 1377219 A CN1377219 A CN 1377219A CN 01139310 A CN01139310 A CN 01139310A CN 01139310 A CN01139310 A CN 01139310A CN 1377219 A CN1377219 A CN 1377219A
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- H10W99/00—
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- H10W72/0198—
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- H10P72/7438—
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- H10W72/536—
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- H10W72/5363—
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- H10W72/884—
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- H10W74/00—
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- H10W90/734—
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- H10W90/736—
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- H10W90/754—
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- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
现有用陶瓷基板和柔软板等作为支持基板安装电路元件的电路装置。但是这些基板的厚度有成为电路装置的小型化和薄型化障碍的问题。在导电箔60上利用分离沟61形成各组件的导电图形51后,因为利用化学研磨使分离沟61的表面粗面化,所以绝缘树脂50和导电图形51结合增强,引入每个组件的切割工序,能够实现适合节省资源和大量生产的电路装置制造方法。
Conventionally, ceramic substrates, flexible boards, etc. are used as circuit devices for mounting circuit components on supporting substrates. However, the thickness of these substrates has the problem of being an obstacle to miniaturization and thinning of circuit devices. After the conductive pattern 51 of each component is formed on the conductive foil 60 by using the separation groove 61, the surface of the separation groove 61 is roughened by chemical grinding, so the combination of the insulating resin 50 and the conductive pattern 51 is strengthened, and the cutting process of each component is introduced. , a circuit device manufacturing method suitable for resource saving and mass production can be realized.
Description
Technical field that the present invention belongs to
The present invention relates to the manufacture method of circuit arrangement, particularly do not want the manufacture method of the slim circuit arrangement of support substrate.
Prior art
Be assemblied in the circuit arrangement of electronic instrument in the past,, seeking its miniaturization, slimming and lightweight for being used for portable phone and portable computer etc.
For example, if be that example is narrated as circuit arrangement,, the encapsulation type semiconductor device that utilizes conventional conversion die sealing was arranged in the past as general semiconductor device with semiconductor device.As shown in figure 11, this semiconductor device is installed on the printed circuit board (PCB) PS.
Also have, this encapsulation type semiconductor device, utilize resin bed 3 cover semiconductor chips 2 around, draw the outside lead terminal 4 that connects usefulness from the side of resin bed 3.
Yet, encapsulation type semiconductor device 1, because lead terminal 4 is outwards drawn from resin bed 3, overall dimensions is big, so can not satisfy miniaturization, slimming and light-weighted requirement.
Therefore, each company tries to be the first and realizes miniaturization, slimming and lightweight, develops various structures, develops the CSP of the wafer-scale equal with chip size that is called CSP (encapsulation of chip size) recently, or the CSP bigger than chip size.
Figure 12 represents the CSP6 bigger than chip size, and it adopts glass epoxy resin substrate 5 as support substrate.Illustrate at glass epoxy resin substrate 5 assembling transistor chip T herein.
On glass epoxy resin substrate 5 surfaces, form the 1st electrode the 7, the 2nd electrode 8 and tube core pad 9, form the 1st backplate 10 and the 2nd backplate 11 overleaf.Pass described the 1st electrode 7 of through hole TH and the 1st backplate 10 electrical connection the 8th electrode and the 2nd backplates then.At tube core pad 9 fixing described exposed transistor chip T, utilize metal fine 12 to connect emitter electrode and the 1st electrode 7, utilize metal fine 12 to connect transistor base electrode and the 2nd electrode 8.And, resin bed 13 is set on glass epoxy resin substrate 5 for covering transistor chip T.
Described CSP6 adopts glass epoxy resin substrate 5, and is different with the CSP of wafer-scale, and the backplate 10 and 11 the extended structure that connect usefulness from chip T to the outside are simple, have the cheap advantage of making.
As shown in figure 11, described CSP6 is assemblied on the printed circuit board (PCB) PS.On printed circuit board (PCB) PS, the electrode and the wiring of forming circuit are set, be electrically connected and fixing described CSP6, encapsulation type semiconductor device 1, chip-resistance CR or chip capacity CC etc.
And the circuit that constitutes on printed circuit board (PCB) is installed in the various assemblies.
The manufacture method of CSP then is described with reference to Figure 13 and Figure 14.
At first, preparation utilizes insulating adhesive crimping Cu paper tinsel 20 and 21 (with reference to Figure 13 A) as the glass epoxy resin substrate 5 of basis material (support substrate) on its two sides.
Then,, apply corrosion resistance resist 22 on the Cu paper tinsel 20 and 21 of tube core pad 9, the 1 backplates 10 and the 2nd backplate 11, make Cu paper tinsel 20 and 21 form figure at corresponding the 1st electrode 7, the 2 electrodes 8.The figure that forms at surface and the back side is well (with reference to Figure 13 B) all.
Then, utilize perforator glass change on the epoxy resins substrate form through hole TH the hole, electroplate this hole, form through hole TH.Utilize through hole TH to be electrically connected the 1st electrode 7 and the 1st backplate 10, the 2 electrodes 8 and the 2nd backplate 11.(with reference to Figure 13)
Also have, omitted drawing, plate Au simultaneously, plate Au, transistor chip T is carried out the tube core welding at the tube core pad 9 that becomes the tube core welding ends at the 1st electrode 7 that becomes welding ends and the 2nd electrode 8.
At last, utilize emitter and the 1st electrode of metal fine 12 connection transistor chip T, the base stage of transistor chip T and the 2nd electrode 8, the coated with resins layer 13 then.(above) with reference to Figure 13 D
Utilize described manufacture method, make the CSP type electric component that adopts support substrate 5.Even adopt limber board as support substrate 5, this manufacture method is suitable for too.
On the one hand, represent to adopt the ceramic substrate manufacture method with flow process shown in Figure 14.Behind the ceramic substrate of preparation as support substrate, form through hole, utilize the electrode at the conductive paste print surface and the back side later on, carry out sintering then.After, till the coated with resins layer of aforementioned manufacture method, identical with manufacture method shown in Figure 13, but ceramic substrate is highly brittle, different with flexible substrate with the glass epoxy resin substrate, cause breach because damage easily, can not utilize metal pattern to carry out molded problem so exist.For this reason, cast potting resin, smooth grinding is carried out to sealing resin in the sclerosis back, utilizes cutter sweep individually to separate at last.
The problem that invention solves
As shown in figure 12, transistor chip T, connector 7～12 and resin bed 13 and outside being connected; aspect transistorized protection, be necessary inscape, but only use such inscape; then be difficult to provide miniaturization, slimming and light-weighted circuit element.
Also have, become the glass epoxy resin substrate 5 of support substrate, as mentioned above, do not need originally.But aspect manufacture method,, can there be glass epoxy resin substrate 5 for bonding electrodes will adopt support substrate.
Therefore, owing to adopt glass epoxy resin substrate 5, cost rises, and because glass epoxy resin substrate 5 is thick, and then the circuit element thickening makes miniaturization, slimming and lightweight are restricted.
Also have, for glass epoxy resin substrate and ceramic substrate, the through hole that connects double-sided electrode forms operation and necessarily can not lack, and has the elongated problem of manufacturing process.
The measure of dealing with problems
The present invention develops in view of above-mentioned many problems, it is characterized in that having following operation, form the operation of conductive pattern, the preparation conductive foil, described conductive foil except the conductive pattern zone of the lift-launch part that forms a plurality of circuit elements at least forms the splitter box more shallow than conductive foil thickness; The described splitter box of chemical grinding surface makes the operation of its surface roughening; The operation of respectively carrying part permanent circuit element at desirable described conductive pattern; Form the operation of connector, be used for being electrically connected the circuit element electrode and the desirable described conductive pattern of described each lift-launch part; Covering is respectively carried the described circuit element of part and is filled described splitter box and utilize the co-molded operation of insulative resin like that in batches; Remove the operation of the described conducting film that described splitter box thickness portion is not set; By cut apart the operation that described insulating properties epoxy resin separates in each equipped section.
In the present invention, the conductive foil that forms conductive pattern is a parent material, and conductive foil has support property till the mold insulation resin, and the insulating resin after molded has support property, shouldn't support substrate, so can solve former problem.
Also have, because chemical grinding splitter box surface makes its surface roughening, make insulative resin have fixed effect in the present invention, can handle each assembly, produce a plurality of circuit arrangements in a large number, thus former problem can be solved,
The simple declaration of accompanying drawing
Fig. 1 is the figure of explanation flow process of the present invention.
Fig. 2 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 3 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 4 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 5 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 6 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 7 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 8 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 9 is the figure of explanation circuit arrangement manufacture method of the present invention.
Figure 10 is the figure of explanation circuit arrangement manufacture method of the present invention.
Figure 11 is the figure of circuit arrangement encapsulating structure before the explanation.
Figure 12 is the figure of circuit arrangement before the explanation.
Figure 13 is the figure of circuit arrangement manufacture method before the explanation.
Figure 14 is the figure of circuit arrangement manufacture method before the explanation.
Embodiments of the invention
At first circuit manufacture method of the present invention is described with reference to Fig. 1.
The present invention has following operation: form the operation of conductive pattern, and the preparation conductive foil, the described conductive foil except the conductive pattern zone of the lift-launch part that forms a plurality of circuit elements at least forms the splitter box more shallow than conductive foil thickness; The described splitter box of chemical grinding surface makes the operation of its surface roughening; The operation of respectively carrying part permanent circuit element at desirable described conductive pattern; Form the operation of connector, be used for being electrically connected the circuit element electrode and the desirable described conductive pattern of described each lift-launch part; In order to cover each described circuit element that carries part in batches and to fill described splitter box, utilize the co-molded operation of insulative resin; Remove the operation of the described conducting film that does not have described splitter box thickness portion; By cut apart the operation that described insulating properties epoxy resin separates in each equipped section.
Flow process shown in Figure 1 is different with described operation, utilizes the Cu paper tinsel, and plating Ag and 3 flow processs of incomplete corrosion form conductive patterns.In the chemical grinding flow process, the surface of chemical grinding splitter box.In tube core welding and two flow processs of wire bonds, to each equipped section permanent circuit element, connecting circuit element electrode and conductive pattern.In the molded flow process of conversion, utilize insulative resin co-molded.In the flow process of removing back side Cu paper tinsel, corrosion does not have the conductive foil of the thickness portion of splitter box.The flow process of Chu Liing overleaf, the electrode of the conductive pattern that exposes is overleaf handled.Carry out non-defective unit and differentiate and the characteristic grade separation measuring the circuit element of flow process each equipped section of packing into.In the flow process of dicing die, separate each circuit element from insulating resin cutting.
Below with reference to Fig. 1～Figure 10 each operation of the present invention is described.
As Fig. 2～shown in Figure 4, the 1st operation of the present invention, preparation conductive foil 60 at the conductive foil 60 except the zone of the conductive pattern 51 of the equipped section that forms a plurality of circuit elements 52, forms the splitter box 61 more shallow than conductive foil 60 thickness, formation conductive pattern 51 at least.
Shown in Fig. 2 A, this operation is used for preparing sheet conductive foil 60.About conductive foil 60, select its material will consider adhesiveness, weldability and the plating of scolder, adopt the conductive foil of Cu as material as main material, the conductive foil of Al as main material, or the conductive foil that constitutes by alloys such as Fe-Ni.
If consider the back corrosion, the thickness of conductive foil is preferably selected 10 μ m～300 μ m, adopts the Copper Foil of 70 μ m (2 ounces) here.But, even below the above 10 μ m of 300 μ m, also be good substantially.Such as described later, be preferably formed as village's splitter box 61 more shallow than conductive foil 60 thickness.
Prepare the conductive foil 60 of sheet, the width of regulation for example is 45mm, is rolled into web-like, can be sent to each operation described later to it then, and the conductive foil 60 that also size according to the rules can be cut into palisade is delivered to each operation described later.
Specifically, shown in Fig. 2 B, line up 4～5 isolator at the assembly 62 that short palisade conductive foil 60 forms a plurality of equipped sections.Between each assembly 62, slit 63 is set, the stress of the conductive foil 60 that produces when being used for absorbing heat treatments such as little molding process.Also have, according to certain intervals index hole 64 is set, be used for determining the position of conductive foil in each operation at the upper and lower side of conductive foil 60.
Then, form conductive pattern.
At first, as shown in Figure 3, on Cu paper tinsel 60, form photoresist (corrosion-resistant) PR, make photoresist PR form figure, so that the conductive foil 60 except conductive pattern 51 zones exposes.Shown in Fig. 4 A, utilize photoresist PR selectively to corrode conductive foil 60 then.
The degree of depth of the splitter box 61 that is formed by etching for example is 50 μ m, and its side is because become asperities, so improved the cementability with insulating resin 50.
Though the sidewall of splitter box 61 illustrates with straight line pattern ground, the method difference of removing has different structures.This removes operation can adopt wet corrosion, dry corrosion, laser evaporation and cutting method.In the wet corrosion situation, mainly adopt chlorination two iron or chlorination two bronze medals to corrode, described conductive foil is immersed in the corrosive liquid, spray with this corrosive liquid.The corrosive liquid here generally carries out non-each corrosion to the non-opposite sex, so side etch is become warp architecture.
In the dry corrosion situation, may carry out anisotropy, non-anisotropic corrosion.Allegedly utilize the reactive ion corrosion can not remove Cu now, but can remove Cu with sputter.Also have, can carry out anisotropy according to the condition of sputter, non-anisotropic corrosion.
Also have, form splitter box 61 with laser direct irradiation laser, the side of that splitter box 61 that this moment is said forms and faces directly.
Also can optionally cover at Fig. 3 corrosion resistant certain conducting film of corrosive liquid (not diagram) is replaced photoresist.If selectively cover circuit part, this conducting film becomes the corrosion protection film, can corrode splitter box without resist.The material that is considered as this conducting film has Ag, Ni, and Au, Pt, or Pd etc.And the feature of these corrosion proof conducting films is to be used as pipe core welding disc and solder joint as it is.
For example, the Ag film is connected with Au, also is connected with scolder.If therefore cover golden film at chip back, hot pressing chip on the Ag of circuit 51 film just can utilize scolder fixed chips such as scolding tin same as before.Because the Au fine rule is connecting the Ag conducting film, so may use wire bonds.Therefore have such advantage, can make these conducting films as it is as pipe core welding disc and solder joint.
Fig. 4 B represents concrete conductive pattern 51.The figure shows in the assembly 62 shown in Fig. 2 B one extended figure.One of the blacking part is a lift-launch part 65, constitutes 51, one assemblies 62 of conductive pattern and arranges a plurality of lift-launch parts 65 with the matrix shape of 5 row, 10 row, carries on part 65 at each same conductive pattern 51 is set.The periphery of each assembly is arranged to the figure 66 of block form, leaves some also its inboard marks 67 of locating to be provided with control site when cutting with it.Frame shape figure 66 as and molded metal film chimeric, after the corrosion of conductive foil 60 back sides, have the effect that insulating resin 50 is strengthened.
The 2nd operation of the present invention, as shown in Figure 5, chemical grinding splitter box 61 makes its surface roughening.
This operation is after forming splitter box 61, and utilizing with sulfuric acid-hydrogen peroxide is that the treatment fluid of main component is handled, and makes splitter box 61 surface roughenings.Adopt メ Star Network (strain) system CB-801 as treatment fluid, in corrosive liquid, immersed several minutes, form the concavo-convex active surface of 1～2 μ m on the surface.Therefore increase the area of splitter box 61 walls.In follow-up operation, can strengthen the bond strength with mold insulation resin 50, obtain good fixed effect.
The present invention also has such method, promptly with the corrosion treatment liquid of organic acid system, and the wall of chemical grinding alligatoring splitter box 61.Adopt the corrosion treatment liquid of メ Star Network (strain) system CZ-8100, in corrosive liquid, immersed several minutes, form the convex-concave surface of 1～2 μ m on the surface as organic acid system.Therefore, obtain better fixed effect than described sulfuric acid-hydrogen peroxide corrosive liquid.But, must selection do not damage the treatment fluid on conductive pattern 51 surfaces.
Also have, except described method, also can the using plasma caustic solution after melanism is handled.
The 3rd operation of the present invention, as shown in Figure 6, permanent circuit element 52 on each equipped section 65 of desirable conductive pattern 51 forms the electrode of the circuit element 52 that is electrically connected each equipped section 65 and the connecting elements of desirable conductive pattern 51.
As circuit element 52 transistor is arranged, semiconductor elements such as diode, IC chip, passive components such as electric capacity chip and resistance chip.Though the thickness thickening still also can be installed CSP, ventricumbent semiconductor element such as BGA.
Here exposed transistor chip 52A is connected on the conductive pattern 51A, utilizes fixedly the metal fine 52A connection emitter electrode and the conductive pattern 51B of usefulness such as hot pressing ball-shaped welded or the welding of ultrasonic wave wedge shape, base electrode and conductive pattern 51B.52B is electric capacity chip or passive component, and is fixing with scolder such as scolding tin or conductive paste 55.
This operation is because at each assembly 62 integrated a plurality of conductive pattern 51, so have the advantage of extreme efficiency ground permanent circuit element 52 and welding lead.
The 4th operation of the present invention, as shown in Figure 7, with insulative resin 50, so that the circuit element 52 of each equipped section 63 of covering is in batch filled splitter box 61 common moulds.
This operation as shown in Figure 7, insulating resin 50 covers circuit element 52A fully, 52B and a plurality of conductive pattern 51A, 51B, 51C, the splitter box 61 between conductive pattern 51 is filled insulating resin 50, obtain and conductive pattern 51A 51B, the firm fixed effect of the matsurface combination of 51C side.Can support conductive pattern 51 so utilize insulating resin 50.
This operation can realize this operation by molded, injection molding of conversion or dipping.As resin material, the thermosetting resin of epoxy resin etc. can be with changing molded realization, and thermoplastic resins such as polyimide resin, poly-p-phenylene sulfide can be realized with injecting mould.
Also have, this operation is being changed molded or during injection molding, shown in Fig. 7 B, each assembly 62 is put into the equipped section 63 of the metal pattern of a shared molded usefulness, and it is common molded to utilize 1 insulating resin 50 to carry out at each assembly.Therefore, with changed in the past situation such as molded respectively the method for molded each equipped section compare, reduce amount of resin significantly.
Adjustment covers insulating resin 50 thickness on conductive foil 60 surfaces, so that from the about 100 μ m in top of the metal fine 55A of circuit element 52.As consider intensity, this thickness may be thick, also may approach.
The feature of this operation is that till covering insulating resin 50, the conduction thin 60 that forms conductive pattern 51 becomes support substrate.In the past, resemble and utilize Figure 13 the support substrate 5 that there is no need to form circuit 7～11, the conduction thin 60 that becomes support substrate in the present invention is the necessary materials as electrode material.For this reason, has the advantage made from economic constituent material.Also realize reducing cost.
Splitter box 61 is because the thickness that forms is more shallow than the thickness of conductive foil, so as conductive pattern 51 each self-separation conductive foil 60 not.Therefore, when carrying out disposed of in its entirety mold insulation resin 50, have to the very easy feature of the making of carrying of changing metal pattern and installation as sheet conductive foil 60.
The 5th operation of the present invention as shown in Figure 7, is removed the conductive foil 60 that splitter box 61 thickness portions are not set.
Utilize in test lapping device or grinding attachment the whole face 30 μ m that prune, expose insulating resin 50 from splitter box 61.In Fig. 7, dot and expose face.The result is separated into the thick conductive pattern 51 of about 40 μ m.Also can be before exposing insulating resin 50 whole ground wet corrosion conductive foil 60, after, utilize lapping device or the grinding attachment whole insulating resin 50 of showing out of pruning.Also have, also can arrive dotted line till whole ground wet corrosion conductive foil 60 up to the position of dotted line, insulating resin 50 is exposed.
As a result, become the structure that makes conductive pattern 51 back sides expose insulating resin 50.Just, be filled in insulating resin 50 surfaces of splitter box 61 and the surface of conductive pattern 51, become consistent in fact structure.Therefore, the feature of circuit arrangement 5 of the present invention is because electrode 10 and 12 such sections are poor before not being provided with as shown in figure 12, during installation because oneself adjustment can be in situ flatly moved in capillary effects such as scolding tin.
Then, conductive pattern 51 is carried out the back side handle, obtain final structure as shown in Figure 8.Just, on the conductive pattern 51 that exposes, apply electric conducting materials such as scolding tin as requested, make circuit arrangement.
The 6th operation of the present invention as shown in Figure 9, is tested the characteristic with the circuit element 52 of molded in batches each equipped section 63 of insulating resin 50.
Behind aforementioned operation corrosion conductive foil 60 back sides, cut off each assembly 62 from conductive foil 60.This assembly 62 is because use the remaining portion of insulating resin 50 connection conductive foils 60, so can cut off the remaining portion of mechanically peeling off conductive foil 60 of metal film.
The back side of conductive pattern 51 as shown in Figure 9, is exposed in the back side of each assembly 62, and each equipped section 65 is arranged in identical matrix shape when forming conductive pattern 51.Handle component 68 is touched on the backplate 56 that the insulating resin 50 from conductive pattern 51 exposes, measure the characterisitic parameter of the circuit element 52 of each equipped section 65 respectively, judge whether non-defective unit, if defective products then marks with magnetic ink etc.
In this operation, the circuit arrangement 53 of each equipped section 65 is because with insulating resin 50 supporting assembly 62 integrally, so do not have singlely to separate dispersedly.Therefore, the assembly of placing on the tester mounting table 62 moves the circuit arrangement 53 of each equipped section 65 of very fast big quantitative determination assembly 62 according to the longitudinal direction and the transverse direction of arrow indication according to a determining deviation according to the size branch of equipped section 65.Just, for the differentiation that must carry out in the past the circuit arrangement surface and the back side, the identification of electrode position etc. can no longer be carried out, and has then shortened the time of measuring widely.
As shown in figure 10, the 7th operation of the present invention is by separating at each equipped section 65 cutting insulating resin 50.
In this operation, vacuum suction assembly 62 on the mounting table of cutter sweep utilizes the insulating resin 50 of cutting blade 69 along the line of cut 70 cutting and separating ditches 61 between each equipped section 65, is separated into each circuit arrangement 53.
In this operation, utilize cutting blade 69 to cut deeply, roughly cut off insulating resin 50, take out assembly 62 backs from cutter sweep and form chocolate tablet with roller.During cutting and the relative position of each assembly peripheral frame shape conductive pattern 66 integral body of being provided with of described the 1st operation involutory, find mark 67 and and its aim at, cut then.Though well-known, after cutting is wanted all to cut along the line of cut 70 of longitudinal direction, return to turn 90 degrees and cut putting microscope carrier again by transverse direction line of cut 70.
The effect of invention
The present invention has the conductive foil body that consists of conductive pattern material as the merit of supporting substrate Can, until support whole by conductive foil when forming splitter box or mounting circuit element, covering insulating resin Body, and when separating conductive foil and forming each conductive pattern, have insulating resin as the support substrate Function. Therefore, can be at component, the necessary lower limit of conductive foil and insulating resin carries out Make. For example in order to the precedent explanation, consisting of original circuit arrangement can not support substrate, like this Can reduce the cost. And by not supporting substrate, conductive pattern being imbedded insulating resin 50 In but also may adjust the thickness of insulating resin and conductive foil, have and can form very thin circuits The advantage of device.
In the present invention, even splitter box is more shallow than being approximately 50 μ m, by make its table with chemical grinding Face roughening, insulating resin and each conducting film be in conjunction with reinforcement, although be very thin circuit arrangement, But the component good seal with insulating resin.
Secondly, the present invention is in the molding process of insulating resin, since co-molded each assembly, institute With a large amount of minimizing resin amounts.
Also have, at cutting action, because the mark that utilizes the position to cooperate, so have very fast affirmation The advantage of line of cut. And when cutting can only be cut off insulating resin layer and do not cut off conductive foil, because of This can prolong the life-span of cutting blade, the gold that the situation that also not occurring in needs the cut-out conductive foil produces Belong to burr.
As shown in Figure 13, form the operation (potteries such as operation, conductor printing because omitted through hole The situation of substrate), existing manufacturing operation is shortened greatly, have the excellent of the whole operations of interior work The point. Also have, owing to do not want the framework metal pattern fully, so be the manufacture method of extremely lacking delivery period.
Claims (17)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001083568A JP3963655B2 (en) | 2001-03-22 | 2001-03-22 | Circuit device manufacturing method |
| JP83568/01 | 2001-03-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1377219A true CN1377219A (en) | 2002-10-30 |
| CN1241259C CN1241259C (en) | 2006-02-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011393106A Expired - Fee Related CN1241259C (en) | 2001-03-22 | 2001-10-30 | Manufacturing method for circuit device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3963655B2 (en) |
| KR (1) | KR20020075188A (en) |
| CN (1) | CN1241259C (en) |
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| CN1301043C (en) * | 2002-12-20 | 2007-02-14 | 三洋电机株式会社 | Circuit device and its mfg. method |
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2001
- 2001-03-22 JP JP2001083568A patent/JP3963655B2/en not_active Expired - Fee Related
- 2001-09-12 KR KR1020010056090A patent/KR20020075188A/en not_active Abandoned
- 2001-10-30 CN CNB011393106A patent/CN1241259C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1301043C (en) * | 2002-12-20 | 2007-02-14 | 三洋电机株式会社 | Circuit device and its mfg. method |
| CN101273679B (en) * | 2005-09-22 | 2011-05-04 | 株式会社村田制作所 | Method for mounting electronic-component module, method for manufacturing electronic apparatus using the same, and electronic-component module |
| CN101064294B (en) * | 2006-04-27 | 2011-11-16 | 三洋电机株式会社 | Circuit device and method for manufacturing circuit device |
| US8656581B2 (en) | 2006-04-27 | 2014-02-25 | Sanyo Electric Co., Ltd. | Method of fabricating a circuit apparatus |
| US8129219B2 (en) | 2006-09-29 | 2012-03-06 | Sanyo Electric Co., Ltd. | Semiconductor module, method for manufacturing the semiconductor module and portable device carrying the same |
| CN101911271B (en) * | 2008-01-17 | 2012-05-30 | 株式会社村田制作所 | Electronic component |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20020075188A (en) | 2002-10-04 |
| CN1241259C (en) | 2006-02-08 |
| JP2002280488A (en) | 2002-09-27 |
| JP3963655B2 (en) | 2007-08-22 |
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| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060208 Termination date: 20131030 |