CN1370811A - Chemical Mechanical Polishing Composition - Google Patents
Chemical Mechanical Polishing Composition Download PDFInfo
- Publication number
- CN1370811A CN1370811A CN 01104727 CN01104727A CN1370811A CN 1370811 A CN1370811 A CN 1370811A CN 01104727 CN01104727 CN 01104727 CN 01104727 A CN01104727 A CN 01104727A CN 1370811 A CN1370811 A CN 1370811A
- Authority
- CN
- China
- Prior art keywords
- composition
- weight
- content
- abrasive particles
- nitrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 239000000126 substance Substances 0.000 title claims abstract description 16
- 238000005498 polishing Methods 0.000 title claims abstract description 9
- 239000006061 abrasive grain Substances 0.000 claims abstract description 13
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000012736 aqueous medium Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 25
- 235000012239 silicon dioxide Nutrition 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- 239000002245 particle Substances 0.000 claims description 12
- 239000004094 surface-active agent Substances 0.000 claims description 11
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical group OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 10
- 150000002823 nitrates Chemical class 0.000 claims description 8
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical group [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 claims description 6
- 229940063953 ammonium lauryl sulfate Drugs 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 4
- 239000006179 pH buffering agent Substances 0.000 claims 4
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 4
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims 4
- 229910002651 NO3 Inorganic materials 0.000 claims 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 229910052593 corundum Inorganic materials 0.000 claims 2
- 229910052906 cristobalite Inorganic materials 0.000 claims 2
- 229910017053 inorganic salt Inorganic materials 0.000 claims 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 2
- 229910003465 moissanite Inorganic materials 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 2
- 238000000227 grinding Methods 0.000 description 48
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 32
- 229960001866 silicon dioxide Drugs 0.000 description 20
- 230000000694 effects Effects 0.000 description 14
- 239000010410 layer Substances 0.000 description 14
- 239000013543 active substance Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000008119 colloidal silica Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- -1 alkyl carbon Chemical compound 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- DVARTQFDIMZBAA-UHFFFAOYSA-O ammonium nitrate Chemical compound [NH4+].[O-][N+]([O-])=O DVARTQFDIMZBAA-UHFFFAOYSA-O 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a Chemical Mechanical Polishing (CMP) composition for use in semiconductor manufacturing, comprising an aqueous medium, abrasive grains, and an anionic surfactant, having a pH of less than or equal to 7.
Description
The present invention relates to a kind of Chemicomechanically grinding composition, particularly relate to a kind of Chemicomechanically grinding composition that polishing semiconductor is made the dielectric laminar surface that is used for, and use the chemical and mechanical grinding method of this abrasive composition.
The cmp technology is the planarization that the difficulty that causes focusing on the micro-photographing process because of plated film height difference when solving IC and make develops.Cmp (CMP) technology at first is applied in the manufacturing of 0.5 micron element on a small quantity, and along with dwindling of size, the number of plies that cmp is used is also more and more.To 0.25 micron generation, cmp has become main flow and necessary planarization.
Generally speaking, cmp (CMP) is to be used to make the metal connection line and the Ginding process of the intermediate metal dielectric layer (ILD) used as insulation layer on semi-conductor.Its method is that semiconductor crystal wafer is placed on the spin finishing platform of being furnished with grinding head, and mat adds the grinding milk that contains polishing particles and some particular chemicals in contact friction process, grinds effect to promote.
So whole ground slurry in the process of CMP, relates to two kinds of processes: the one, the electrochemical actions such as redox of the transfer transport between the chemical and the metal level that will act on, or the physisorption between chemical and dielectric layer; The one, abrasive particle directly and the mechanical force friction effect between metal level or dielectric layer to destroy the crystal arrangement of whole material surface, reaches the effect of quickening grinding rate.
For metal level, chemical action is chiefly directed to the transfer transport in the aqueous solution.But our mat adds some proper amount of oxidant, catalyzer, salt or complex compound quickens electron transfer rate between metal and the chemical, to promote the dissolving and the oxidation of metal level.
For dielectric layer or insulation layer; transfer transport is impossible, so the adjustment that we can mat pH value changes the double-deck characteristic of surface electrical of whole material; the physical properties that the electrical same sex of mat is repelled each other again, there is a natural attraction between the sexes reaches the effect of protecting or removing material.
Friction effect as for mechanical force, except relevant, also relevant with material characters such as the kind of abrasive grain, granular size, shape, crystalline structure, hardness, density, thermal expansivity, heat-conduction coefficient, ultimate compression strength, tensile strength in addition with the parameters of machine condition.
At present the slurry of CMP successfully is applied in aluminium, tungsten, copper and implants in the grinding of metal levels such as polysilicon of III or V group element, and on the dielectric layer or insulation layer of silicon-dioxide, boron phosphorus silicate glass (BPSG), silicon nitride and low-k.
Improve the method for the selection ratio of insulation layer silicon-dioxide and silicon nitride in the market, the special property of having plenty of the abrasive grain utilized reaches, and this method is disclosed in United States Patent (USP) the 5th, 759, No. 917, United States Patent (USP) the 5th, 891, in No. the 5th, 861,05, No. 205 and the United States Patent (USP).
Also can utilize tensio-active agent that contains fluorine or the compound that some contain special organic salt or inorganic salts as additive in addition, promote the selection ratio of insulation layer silicon-dioxide and silicon nitride.As United States Patent (USP) the 5th, 738, disclosed in No. the 5th, 769,689, No. the 5th, 352,277, No. 800, No. the 5th, 863,838, United States Patent (USP), WO 96/16436, United States Patent (USP) and the United States Patent (USP).
But utilize abrasive grain to reach the effect that promotes silicon-dioxide and silicon nitride grinding selectivity ratio, have easily the wafer that grinds is caused scratch, or disperse not good, easily precipitation and the high problem of cost, and if use special organic or inorganic chemical additive, but poor effect often.
The present invention is for making in semi-conductor is made, can obtain the high silicon-dioxide and the grinding selectivity ratio of silicon nitride, and can effectively reduce cost, and can eliminate scratch, disperse not good and easy sedimentary phenomenon, this case inventor through broad research, finds to have the chemical grinding composition of some special composition, can realize purpose of the present invention, and the gained result is set forth among the present invention.
Main purpose of the present invention is to provide a kind of Chemicomechanically grinding composition.
Another object of the present invention provides a kind of semi-conductor manufacturing that is used for, and has the Chemicomechanically grinding composition of the grinding selectivity ratio of high silicon-dioxide and silicon nitride.
A further object of the present invention provides a kind of chemical grinding composition of eliminating scratch, disperseing not good and easy sedimentary phenomenon.
The present invention provides a kind of Chemicomechanically grinding composition, and said composition contains aqueous medium, abrasive grain and cloudy subtype tensio-active agent, and its pH value is less than or equal to 7.
Fig. 1 is the zeta-potential figure of silicon-dioxide and silicon nitride.
The invention provides a kind of Chemicomechanically grinding composition for the semiconductor manufacturing, contain the aqueous medium of 70-99.5 % by weight, the abrasive grains of 0.5-25 % by weight, be preferably 0.5-15 % by weight, 1-10 % by weight more preferably, and the surfactant of 0.01-2 % by weight, be preferably the 0.03-1 % by weight, 0.05-0.5 % by weight more preferably, this surfactant is the anionic surfactant of containing sulfate radicals and sulfonate radical etc.
Employed aqueous medium can be water in the Chemicomechanically grinding composition of the present invention. In preparation process, can make water so that Chemicomechanically grinding composition is the slurries shape, preferred aqueous medium is deionized water.
In the Chemicomechanically grinding composition of the present invention employed abrasive grains can be general commercially available, SiO for example2、Al
2O
3、ZrO
2、CeO
2、SiC、Fe
2O
3、TiO
2、Si
3N
4Or its mixture. These abrasive grains have higher degree, high-specific surface area, and the advantage such as narrow particle diameter distribution, therefore are applicable in the Chemicomechanically grinding composition as abrasive grains.
Employed anionic surfactant is the anionic surfactant with hydrophilic radical in the Chemicomechanically grinding composition of the present invention, is preferably the surfactant of containing sulfate radicals and/or sulfonate radical. This kind surfactant can form layer protective layer on silicon nitride; to reduce abrasive particle to its worn impact; but inoperative to silicon dioxide layer, so do not protect fully for the mechanical force of abrasive particle, use the effect that reaches the worn selection ratio that promotes silica and silicon nitride.
Chemicomechanically grinding composition of the present invention can optionally add nitric acid or ammoniacal liquor with the pH value of control slurries within required scope. In addition, in lapping liquid, also can optionally add the salts such as ammonium nitrate as pH value buffer. The content of ammonium nitrate is the 0.0-5.0 % by weight, is preferably the 0.03-0.5 % by weight.
As Fig. 1, the iso-electric point of silicon-dioxide is near pH=3, and silicon nitride then is in pH value=5.Therefore for silicon nitride, pH was less than 5 o'clock, and silicon nitride is a positively charged, and silicon oxide surface be not electronegative be exactly the positive electricity of being with slightly.Therefore we expect using aniorfic surfactant; utilize the charges of different polarity to inhale principle mutually, the hydrophilic radical of anionic is adsorbed on silicon nitride surface, hydrophobic grouping then exposes; form the adsorption film of a unimolecular layer, the protection silicon nitride surface is subjected to machinery or chemical action.This compound can increase its surfactivity along with the increase of straight or branched alkyl carbon number, reduces the solubleness to water simultaneously, and is water-insoluble unimolecular film.
Following examples will the present invention is further illustrated, and they are not in order to limiting the scope of the invention, and any those skilled in the art can unlabored modification and change, all is covered by in the scope of the present invention.
Following examples demonstration the preferred embodiments of the invention and the preferred method that uses composition of the present invention.
Preparation tensio-active agent of 6 kinds of different concns and Nitrates as lapping liquid to assess of the influence of formed CMP lapping liquid for silicon-dioxide (TEOS) and silicon nitride (SiN) dielectric layer grinding rate.Measured performance perameter comprises the grinding rate of silicon-dioxide and silicon nitride.
Test condition is as follows: grind test condition:
A. instrument: IPEC/Westech 472
B. condition: pressure: 2psi
Back pressure: 0.5psi
Temperature: 25 ℃
The speed of mainshaft: 90rpm
Platen rotating speed: 50rpm
Base pattern: IC1000
Slurry flow rate: 150 ml/min
C. wafer: silicon-dioxide (TEOS) film and silicon nitride (SiN) thin film wafers available from Silicon Valley Microelectonics.Inc., are to deposit 8～9 microns ± 5% film with the CVD technology on 6 cun Silicon Wafers.Grind testing process:
The non-metallic film wafer must be measured the thickness of film with Tencor SM-300 optical interdferometer before and after grinding, again divided by milling time, be grinding rate behind the thickness after measured thickness deducts before again.
The preparation process of lapping liquid is as follows: at room temperature, add ammonium nitrate earlier in deionized water for stirring, after determining to dissolve fully, add 10% silicic acid glue (colloidal silica) abrasive grain again, continue to stir 20-30 minute, it is dispersed in the whole solution.Add tensio-active agent again, continue to stir 20 minutes.Adjusting the pH value with nitric acid at last is 4.0.Must not add any oxygenant during grinding can directly test.The concentration of whole additive is as listed in the table.
Its grinding rate is as shown in table 1.
Table 1 tensio-active agent is to the grinding rate influence of silicon-dioxide and silicon nitride
Wherein grinding rate is all with /minute expression
| Sample | % ammonium nitrate | The % ammonium lauryl sulfate | The pH value | The TEOS grinding rate | The SiN grinding rate | Select ratio |
| ????1 | ????0 | ????0 | ????4 | ????464 | ????257 | ??1.8 |
| ????2 | ????0 | ????0.05 | ????4 | ????450 | ????203 | ??2.2 |
| ????3 | ????0 | ????0.5 | ????4 | ????408 | ????37 | ??11.0 |
| ????4 | ????0.05 | ????0.05 | ????4 | ????678 | ????306 | ??2.2 |
| ????5 | ????0.05 | ????0.1 | ????4 | ????617 | ????138 | ??4.5 |
| ????6 | ????0.05 | ????0.5 | ????4 | ????514 | ????39 | ??13.2 |
As shown in table 1, along with the concentration of the tensio-active agent that is added (ammonium lauryl sulfate) increases gradually, the grinding rate of silicon nitride reduces gradually, and silicon-dioxide to the selection of silicon nitride than improving gradually.But adding the ammonium nitrate salt, but be helpless to the inhibition of silicon nitride grinding rate, the lifting of whole grinding selectivity ratio is not had clearly influence, is buffer reagent as the pH value of solution value so add the effect of ammonium nitrate purely.
Therefore present embodiment can prove that silicon-dioxide is the effect of tensio-active agent to the lifting of silicon nitride grinding selectivity ratio, but not Nitrates.
In order to more clearly understand the pH value of solution value to grinding result's influence, we fix the amount of other additive, only change change pH values, observe the variation of whole grinding rate.
Composed as follows to prepare slurries as embodiment 1 described same way as, its grinding rate is as shown in table 2:
10% colloidal silica abrasive grain, ammonium nitrate 0.05% be as pH value buffer reagent, acidic solution nitric acid adjustment, and basic solution is adjusted with ammoniacal liquor.
The different pH value of table 2 is to the grinding rate influence of silicon-dioxide and silicon nitride
| Sample | The % ammonium lauryl sulfate | The pH value | The TEOS grinding rate | The SiN grinding rate | Select ratio |
| ??1 | ????0.5 | ??9.0 | ???226 | ????220 | ??1.0 |
| ??2 | ????0.5 | ??8.5 | ???178 | ????105 | ??1.7 |
| ??3 | ????0.5 | ??8.0 | ???238 | ????170 | ??1.4 |
| ??4 | ????0.5 | ??7.0 | ???178 | ????36 | ??4.9 |
| ??5 | ????0.5 | ??4.0 | ???514 | ????39 | ??13.2 |
| ??6 | ????0.5 | ??2.5 | ???614 | ????23 | ??26.7 |
As shown in table 2, under different pH values, silicon-dioxide also can present different result to the silicon nitride grinding rate.When the pH value by alkalescence toward acidity when adjusting downwards gradually, can find that silicon-dioxide becomes better and better to the selection ratio of silicon nitride, in addition in the pH value less than 3 o'clock, effect is compared in the selection that can obtain more than 20.
Embodiment 3
In order to prove that aniorfic surfactant is applicable to the present invention, we select the tensio-active agent of a series of different functional groups to be compared, and to prove its effect are arranged really.
To prepare the effect of slurries as embodiment 1 described same way as with assessment different surfaces promoting agent.Every kind of slurries include 10% colloidal silica abrasive grain, 0.05% ammonium nitrate, the tensio-active agent of 0.5% same amount, and pH does not adjust, and its grinding rate is as shown in table 3.
The different tensio-active agent of table 3 is to the influence of silicon-dioxide and silicon nitride grinding rate
| Sample | % ammonium nitrate | 0.5% tensio-active agent | The pH value | The TEOS grinding rate | The SiN grinding rate | Select ratio |
| ??1 | ??0.05 | Ammonium lauryl sulfate | ?2.5～3.0 | ???631 | ???15 | ??42.1 |
| ??2 | ??0.05 | Three decyl sodium sulfonates | ?2.5～3.0 | ???703 | ???16 | ??43.9 |
| ??3 | ??0.05 | Japan rising sun electrification worker SE-10 | ?2.5～3.0 | ???616 | ???14 | ??44.0 |
| ??4 | ??0.05 | ??Dow?chemical ??Dowfax?2A1 | ?2.5～3.0 | ???741 | ???21 | ??35.3 |
| ??5 | ??0.05 | The Japan first pharmacy Hitenol HS-10 | ?2.5～3.0 | ???423 | ???17 | ??24.9 |
| ??6 | ??0.05 | ??Rhone?Poulenc ????DS-4 | ?2.5～3.0 | ???665 | ???9 | ??73.9 |
The tensio-active agent that above embodiment is used, some indicates full name, and some then is the trade name of each company.Above-mentioned tensio-active agent is the long chain molecule compound of sulfur-bearing acid group and/or sulfonate radical.
From embodiment 3, can prove the sulfur-bearing acid group or the aniorfic surfactant of sulfonate radical, the lifting for silicon-dioxide and silicon nitride selection ratio has excellent effect.
Though utilized specific embodiment to describe the present invention, under prerequisite not departing from essence of the present invention, the scope of the invention be not subjected to that the invention among above stated specification and the embodiment describes limit, it is defined by following claim.
Claims (27)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011047275A CN1192073C (en) | 2001-02-21 | 2001-02-21 | Chemical Mechanical Polishing Composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011047275A CN1192073C (en) | 2001-02-21 | 2001-02-21 | Chemical Mechanical Polishing Composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1370811A true CN1370811A (en) | 2002-09-25 |
| CN1192073C CN1192073C (en) | 2005-03-09 |
Family
ID=4653997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011047275A Expired - Lifetime CN1192073C (en) | 2001-02-21 | 2001-02-21 | Chemical Mechanical Polishing Composition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1192073C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7101801B2 (en) | 2002-11-12 | 2006-09-05 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device using chemical mechanical polishing |
| WO2006134462A3 (en) * | 2005-06-13 | 2007-04-19 | Basf Electronic Materials Taiw | Slurry composition for color filter polishing |
| CN102190962A (en) * | 2010-03-10 | 2011-09-21 | 福吉米株式会社 | Polishing composition and polishing method using the same |
-
2001
- 2001-02-21 CN CNB011047275A patent/CN1192073C/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7101801B2 (en) | 2002-11-12 | 2006-09-05 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device using chemical mechanical polishing |
| CN1322555C (en) * | 2002-11-12 | 2007-06-20 | 株式会社东芝 | Method of fabricating semiconductor device |
| WO2006134462A3 (en) * | 2005-06-13 | 2007-04-19 | Basf Electronic Materials Taiw | Slurry composition for color filter polishing |
| GB2441263A (en) * | 2005-06-13 | 2008-02-27 | Basf Ag | Slurry composition for color filter polishing |
| CN102190962A (en) * | 2010-03-10 | 2011-09-21 | 福吉米株式会社 | Polishing composition and polishing method using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1192073C (en) | 2005-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1052502C (en) | Compositions and methods for polishing and planing surfaces | |
| US7247179B2 (en) | Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal | |
| KR101232442B1 (en) | Polishing composition and method utilizing abrasive particles treated with an aminosilane | |
| RU2608890C2 (en) | Aqueous polishing composition containing n-substituted diazenium dioxides and/or salts of n-substituted n'-hydroxy-diazenium oxides | |
| KR100459580B1 (en) | Gel-free colloidal abrasive polishing composition and associated methods | |
| RU2573672C2 (en) | Aqueous polishing composition and method for chemical-mechanical polishing of substrates having polysilicon and silicon oxide dielectric films | |
| CN1282226C (en) | Cerium oxide abrasive and grinding method of substrate | |
| CN101490200B (en) | Cmp method for metal-containing substrates | |
| CN1935927B (en) | Cerium oxide abrasive and method of polishing substrates | |
| KR101371939B1 (en) | Composition and method to polish silicon nitride | |
| US20080057713A1 (en) | Silicon carbide polishing method utilizing water-soluble oxidizers | |
| EP0846741A1 (en) | Polishing composition | |
| CN103620747A (en) | Polishing composition | |
| CN1296049A (en) | Compositions for chemical-mechanical polishing | |
| CN102206465B (en) | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal | |
| CN1282775A (en) | Chemical mechanical polishing composition and method | |
| JP2002080827A (en) | Aqueous dispersion for chemical and mechanical polishing | |
| KR20200092892A (en) | Shallow trench isolation (sti) chemical mechanical planarization (cmp) polishing with low abrasive concentration and a combination of chemical additives | |
| KR20020010910A (en) | Magnetic polishing fluids | |
| CN1370811A (en) | Chemical Mechanical Polishing Composition | |
| US20080274618A1 (en) | Polishing composition and method for high selectivity polysilicon cmp | |
| US10683439B2 (en) | Polishing composition and method of polishing a substrate having enhanced defect inhibition | |
| JP2018107329A (en) | Polishing liquid composition for silicon oxide film | |
| CN114729229A (en) | High oxide removal rate shallow trench isolation chemical mechanical planarization composition | |
| TWI905422B (en) | Polishing composition and method of polishing a substrate having enhanced defect inhibition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: CHANGXING DEVELOPMENT TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: CHANGXING CHEMICAL INDUSTRY CO LTD Effective date: 20060714 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20060714 Address after: Taiwan, China Patentee after: Changxing Development Technology Co., Ltd. Address before: Taiwan, China Patentee before: Changxing Chemical Industrial Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20050309 |
|
| CX01 | Expiry of patent term |