CN1359160A - Organic film double-function device with photo and electricity conversion - Google Patents
Organic film double-function device with photo and electricity conversion Download PDFInfo
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- CN1359160A CN1359160A CN02109031A CN02109031A CN1359160A CN 1359160 A CN1359160 A CN 1359160A CN 02109031 A CN02109031 A CN 02109031A CN 02109031 A CN02109031 A CN 02109031A CN 1359160 A CN1359160 A CN 1359160A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/549—Organic PV cells
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Abstract
The organic film double-function device with photoelectric conversion and electrooptic conversion includes metal cathode, organic compound film layer and transparent anode. When it is used as electro-optical conversion device, sun light is utilized and absobed and converted into solar energy to provide working power supply for itself and can send bright light, and when it is used as photoelectric conversion device, solar energy can be converted into electric energy, and can be used in light detector, photoelement and UV irradiation monitoring instrument for monitoring environment.
Description
Technical field: the invention belongs to field of optoelectronic devices, relate to a kind of improvement to photovoltaic device.Light → electricity conversion can take place in photovoltaic device under sunlight or UV-irradiation, can launch light when applying direct voltage.
Background technology: photovoltaic device in the past is divided into inorganic semiconductor and organic two classes:
To inorganic semiconductor, in the time of near extraneous photoirradiation semiconductor p-n junction district, as long as the energy of incident light is greater than its band gap width, just might produce intrinsic excitation and produce electron-hole pair, this photohole and light induced electron be electronics trend n district, trend p district, hole under interior field action, p district and n district will accumulate excessive hole and excess electrons respectively like this, thereby form an electric field, just have photogenerated current and pass through when external connecting circuit.This photovoltaic device is applied to solar cell and photodiode widely.But this device does not have lighting function when leading to direct current.
Recently the organic photovoltaic devices of carrying out has individual layer and multilayer device, and is very big to single layer device photovoltaic property and the electrical relation of electrode, and duty ratio is also bad.Tang invents a kind of double-deck organic film photovoltaic device, and its characteristic depends primarily on the interface [C.W.Tang, Appl phys Lett, 48 (2) 1986 183-185] of two organic layers, but does not report relevant electroluminescent properties.
Summary of the invention: the object of the invention is to solve only has a kind of photoelectric converting function in the background technology, it can only be used for opto-electronic conversion and not have the function problem of electric light conversion, when needing external power supply as electro-optical conversioning device, make the device cost height, power source life is short, problems such as poor stability, to propose difunctional be the conversion of light → electricity and electricity → light translation function device in the present invention for achieving the above object, a kind of n district and electron acceptor of making the photoelectric converting function device with rare earth compounding will be provided, TPD or NPB do p district and electron donor, when ultraviolet light or solar light irradiation, realize opto-electronic conversion.
The present invention includes metallic cathode 1, organic compound thin film layer 2, organic compound thin film layer 3, transparent anode 4, one side is a metallic cathode 1, opposite side is a transparent anode 4, is gripped with organic compounds thin layer 2 and organic compound thin film layer 3 between metallic cathode 1 and transparent anode 4.It is RE (A) that organic compound thin film layer 2 adopts rare earth compounding
3B; Organic compound thin film layer 3 adopts TPD and/or NPB and and/or diamine derivative.
When the present invention works as shown in Figure 1: its two functions all mainly occur in the near interface of two organic thin film layers.The organic layer that has two kinds of difference in functionalitys in this device.When utilizing the electric driving device of device self, this device then has photoelectric converting function.Promptly when utilizing the solar light irradiation transparent anode, can record short circuit current and open circuit voltage between transparent anode and the metallic cathode with DC ammeter.Organic compound thin film layer near metal electrode is an electron acceptor, and the organic compound thin film layer of close transparent anode is an electron donor.Metallic cathode and transparent anode are respectively electron collection layer and collecting layer, hole.
When utilizing electric driving device, this device then has the electric light translation function.When metallic cathode and transparent anode apply negative voltage and positive voltage respectively, can launch bright light from the transparent anode side, this moment, the organic compound thin film layer then became electron transfer layer and hole transport-emission layer respectively.Transparent anode is the hole injection layer light output layer of holding concurrently, and metallic cathode is an electron injecting layer.
The difunctional organic optoelectronic device that the present invention proposes is that organic interface layer effect device is during as photovoltaic device, TPD or NPB layer are as electron donor, the rare earth compounding layer is made electron acceptor, being actually under rayed that exciton takes place to decompose at two organic interface places is electric charge carrier generation ionization, electronics moves to the electron acceptor direction, move to the electron donor direction in the hole, so at the excessive electronics of electron acceptor district accumulation, form additional electric field in the excessive hole of accumulation, electron donor district, this additional electric field externally will produce photogenerated current by circuit.Device is under direct voltage drive, from transparent anode to TPD or NPB injected hole, inject electronics from metallic cathode to rare earth compounding, by partially TPD or NPB one side are luminous compound and by the exciton deexcitation and luminous at the interface, some variations take place with driving voltage in this luminous zone, mainly be to become with voltage because of emission spectrum, under low voltage drive, except TPD or NPB emission, also present superposition emission band by long wave, it is not from rare earth compounding and TPD or NPB, but from the interface of two organic layers.We think that it is the interface emission that is called exciplex.When selecting RE=Y, during light emitting ionic, exciplex emission relative intensity is not higher for La, Gd etc.We find enjoyably that also the exciplex emission is strong more, and its light-electric conversion effect is also just good more.
Good effect of the present invention: opto-electronic conversion and electro-optical conversioning device that the present invention adopts the organic compound thin film layer to make are a kind of lighting source and dull and stereotyped active displays that does not need additional power source.When above-mentioned device during as electro-optical conversioning device, promptly utilize device to absorb to come from the light of the sun and convert thereof into solar energy and provide working power for self, device cost is reduced greatly, because the sun constantly replenishes self power supply its stability and life-span are improved, having solved the background technology electro-optical conversioning device needs that external power supply, cost height, power source life are short, the problem of poor stability.It is again a kind of organic electroluminescence device, gives off bright light under five volts～20 volts driven, and emission spectrum changes with driving voltage, then can be used for lighting source and dull and stereotyped active display; When above-mentioned device during as electrooptical device, can become electric energy to solar energy converting when promptly utilizing this device of the rayed that comes from the sun, then it can be used for the UV-irradiation monitor of photo-detector, photovoltaic cell and environmental monitoring.
Description of drawings:
Fig. 1 is the schematic diagram of electric light conversion of the present invention
Fig. 2 is the schematic diagram of opto-electronic conversion of the present invention
Embodiment such as Fig. 1 are shown in Figure 2: metallic cathode 1 can adopt aluminium, gold, silver, copper and with the alloy of active metals such as lithium, magnesium, calcium.Organic compound thin film layer 2 can adopt RE (A)
3A in the B formula is beta-diketone compounds, carboxylated compound etc., and B is a Phen, and bipyridine and their derivative thereof are when selecting RE=Y or La or Gd or Lu or the combination in any between them.Organic compound thin film layer 2 is rare earth ternary complexes, and wherein first beta-diketonate ligand can be acetylacetone,2,4-pentanedione ACA, dibenzoyl methane DBM, and α-thenyltrifluoroacetone TTA: the part BMA that benzoyl acetone etc. are nitrogenous; Second part can be 1,10-Phen, 2,9 dimethyl-1,10 Phen, 4,7 diphenyl-1,10 Phen etc.Organic compound thin film layer 3 adopts TPD and/or NPB and/or diamine derivative.TPD is N ', N '-two (3-aminomethyl phenyl)-1, and 1 '-diphenyl-4,4 '-diamines, NPB are N, N '-two (naphthyl)-1,1 '-diphenyl-4,4 ' diamines.
Two kinds of organic compound thin film layers and metallic cathode film all adopt vacuum vapor deposition method to form, then the extraction electrode and be made as negative pole and positive pole respectively respectively at metallic cathode 1 and transparent anode 4 places.
When to select wavelength for use be the light of 200～450nm wavelength or sunlight when transparent anode one side is shone, can measure tangible open circuit voltage and short circuit current respectively with D.C. voltmeter and DC ammeter.Sense of current transparent anode one side just, metallic cathode one side is for negative.When being anodal when device applies direct voltage with the transparent anode, begin to have light blue luminous, blue light color purity increased when voltage raise, and when emission peak became 460nm, maximum luminousing brightness can reach 700cd/m
2More than, and two kinds of device functions can circulate lastingly and use repeatedly.Other embodiment is as follows:
| Sequence number | Device architecture | 365nm ultraviolet lighting (optical density: 40/cm 2) open circuit voltage (V), short circuit current (μ A/cm 2) | (cd/m during driven 17V 2) |
| ????1 ????2 ????3 ????4 ????5 ????6 ????7 | ????ITO/TPD/Gd(ACA) 3phen/MgAg ????ITO/NPB/Y(ACA) 3phen/MgAg ????ITO/TPD/La(ACA) 3phen/MgAg ????ITO/NPB/Lu(ACA) 3phen/MgAg ????ITO/TPD/Y(ACA) 3phen/MgAg ????ITO/TPD/Y，Gd(ACA) 3phen/MgAg ????ITO/NPB/Lu，Y(ACA) 3phen/MgAg | ?1.5V?20μA/cm 2?2.0V?10μA/cm 2?1.0V?15μA/cm 2?1.2V?20μA/cm 2?1.8V?30μA/cm 2?1.8V?10μA/cm 2?1.8V?40μA/cm 2 | ????50 ????300 ????60 ????200 ????20 ????500 |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB021090319A CN1153305C (en) | 2002-01-10 | 2002-01-10 | An organic thin-film bifunctional device with photoelectric and electro-optical conversion |
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| CNB021090319A CN1153305C (en) | 2002-01-10 | 2002-01-10 | An organic thin-film bifunctional device with photoelectric and electro-optical conversion |
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| CN1359160A true CN1359160A (en) | 2002-07-17 |
| CN1153305C CN1153305C (en) | 2004-06-09 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1313565C (en) * | 2004-07-23 | 2007-05-02 | 北京化工大学 | Rare earth/polymer composite luminous material and its preparation method |
| CN100347864C (en) * | 2003-07-14 | 2007-11-07 | 仁宝电脑工业股份有限公司 | Photoelectric conversion film, power storage device, and display using the same |
| CN101226955B (en) * | 2008-01-29 | 2012-03-14 | 昆山维信诺显示技术有限公司 | Organic electroluminescent device |
| CN101317128B (en) * | 2005-10-11 | 2012-03-28 | 诺基亚公司 | Power generation display device, mobile terminal and method for operating the display device |
| CN102542926A (en) * | 2011-12-23 | 2012-07-04 | 彩虹集团公司 | Organic photovoltaic and electroluminescent combined display device and production method thereof |
| CN103606633A (en) * | 2013-11-28 | 2014-02-26 | 电子科技大学 | Organic electroluminescence and photovoltaic integration device and manufacturing method |
| CN105789441A (en) * | 2015-11-26 | 2016-07-20 | 电子科技大学 | Organic dual-functional device and preparation method thereof |
| CN106920856A (en) * | 2017-03-14 | 2017-07-04 | 芜湖乐知智能科技有限公司 | A kind of electroluminescent and photovoltaic double-function device and preparation method thereof |
| CN110010598A (en) * | 2019-04-01 | 2019-07-12 | 杭州众能光电科技有限公司 | A kind of luminous integrated device of perovskite of integration self energizing |
| CN112599646A (en) * | 2020-12-25 | 2021-04-02 | 惠州学院 | Full-spectrum photoelectric dual-channel device and preparation method and application thereof |
| CN116345725A (en) * | 2023-01-05 | 2023-06-27 | 广东工业大学 | Novel voltage gain continuously adjustable photonic transformer and efficiency optimization method thereof |
-
2002
- 2002-01-10 CN CNB021090319A patent/CN1153305C/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100347864C (en) * | 2003-07-14 | 2007-11-07 | 仁宝电脑工业股份有限公司 | Photoelectric conversion film, power storage device, and display using the same |
| CN1313565C (en) * | 2004-07-23 | 2007-05-02 | 北京化工大学 | Rare earth/polymer composite luminous material and its preparation method |
| CN101317128B (en) * | 2005-10-11 | 2012-03-28 | 诺基亚公司 | Power generation display device, mobile terminal and method for operating the display device |
| CN101226955B (en) * | 2008-01-29 | 2012-03-14 | 昆山维信诺显示技术有限公司 | Organic electroluminescent device |
| CN102542926A (en) * | 2011-12-23 | 2012-07-04 | 彩虹集团公司 | Organic photovoltaic and electroluminescent combined display device and production method thereof |
| CN103606633A (en) * | 2013-11-28 | 2014-02-26 | 电子科技大学 | Organic electroluminescence and photovoltaic integration device and manufacturing method |
| CN103606633B (en) * | 2013-11-28 | 2016-03-02 | 电子科技大学 | A kind of organic electroluminescent and integrated photovoltaic device and preparation method |
| CN105789441B (en) * | 2015-11-26 | 2018-07-27 | 电子科技大学 | A kind of organic double-function device and preparation method thereof |
| CN105789441A (en) * | 2015-11-26 | 2016-07-20 | 电子科技大学 | Organic dual-functional device and preparation method thereof |
| CN106920856A (en) * | 2017-03-14 | 2017-07-04 | 芜湖乐知智能科技有限公司 | A kind of electroluminescent and photovoltaic double-function device and preparation method thereof |
| CN106920856B (en) * | 2017-03-14 | 2018-09-07 | 江苏迪生建设集团有限公司 | A kind of electroluminescent and photovoltaic double-function device and preparation method thereof |
| CN110010598A (en) * | 2019-04-01 | 2019-07-12 | 杭州众能光电科技有限公司 | A kind of luminous integrated device of perovskite of integration self energizing |
| CN112599646A (en) * | 2020-12-25 | 2021-04-02 | 惠州学院 | Full-spectrum photoelectric dual-channel device and preparation method and application thereof |
| CN112599646B (en) * | 2020-12-25 | 2022-12-16 | 惠州学院 | A full-spectrum optoelectronic dual-channel device and its preparation method and application |
| CN116345725A (en) * | 2023-01-05 | 2023-06-27 | 广东工业大学 | Novel voltage gain continuously adjustable photonic transformer and efficiency optimization method thereof |
| CN116345725B (en) * | 2023-01-05 | 2023-12-08 | 广东工业大学 | A new type of continuously adjustable voltage gain photonic transformer and its efficiency optimization method |
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| CN1153305C (en) | 2004-06-09 |
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