CN1228843C

CN1228843C - Bidirectional overvoltage and electrostatic discharge protector

Info

Publication number: CN1228843C
Application number: CN 02106160
Authority: CN
Inventors: 陈伟梵
Original assignee: Winbond Electronics Corp
Current assignee: Winbond Electronics Corp
Priority date: 2002-04-05
Filing date: 2002-04-05
Publication date: 2005-11-23
Anticipated expiration: 2022-04-05
Also published as: CN1450638A

Abstract

The present invention relates to a bidirectional overvoltage and electrostatic discharge protector which is used for an output/input terminal and comprises a P-type semiconductor layer, a first N-type conduction layer, a second N-type conduction layer, a first P-type doped region, a first N-type doped region, a second P-type doped region and a second N-type doped region, wherein the first N-type conduction layer and the second N-type conduction layer are separately arranged on the surface of the P-type semiconductor layer, the first P-type doped region and the first N-type doped region are both arranged on the surface of the first N-type conduction layer, and the second P-type doped region and the second N-type doped region are both arranged on the surface of the second N-type conduction layer. The first N-type doped region is coupled to a connection welding pad of an output-input terminal, and the second N-type doped region is coupled to a power supply line. Both positive voltage and negative voltage signals are transferred through the connection welding pad of the output-input terminal. When voltage on the connection welding pad of the output-input terminal is beyond a certain range, the bidirectional protector is switched on to release stress to protect an internal circuit.

Description

Bidirectional overvoltage and electrostatic discharge protective device

Technical field

The present invention relates to overvoltage (the electrical overstress on a kind of integrated circuit, EOS) with static discharge (electrostatic discharge, ESD) protector, the overvoltage/protecting component for electrostatic discharge of particularly a kind of two-way (bi-directional).

Background technology

(integrated level of IC is more and more higher for integrated circuit, development IC), and element wherein is more and more accurate, makes also that element among the IC is easy more to be subjected to unexpected overvoltage or electrostatic potential is damaged along with integrated circuit.Therefore, overvoltage and static discharge just become one of the key factor of the reliability of IC.In the IC design, often between output/input and power line or between different power lines overvoltage/electrostatic storage deflection (ESD) protection circuit is set, be not subjected to the infringement of overvoltage/static discharge to guarantee the element among the IC.

Fig. 1-1 is the common overvoltage/electrostatic storage deflection (ESD) protection circuit with diode enforcement; Fig. 1-2 is the voltage-current curve figure of the diode among Fig. 1-1.Voltage on I/O bond pad 10 surpasses the breakdown voltage V of diode _BreakThe time, just conducting and be released in stress on the I/O bond pad 10 of diode is with the internal circuit 12 among the protection IC.

Fig. 2-1 is common thyristor (semiconductor controlled rectifier, profile SCR) and component symbol; Fig. 2-2 is the voltage-current curve figure of the diode among Fig. 2-1; Fig. 2-the 3rd, the circuit diagram when being applied to the I/O bond pad for the SCR among Fig. 2-1.After triggering, the cross-pressure of SCR will be limited in very little sustaining voltage V _HoldTherefore, when superpotential state or electrostatic discharge event, SCR can discharge a large amount of electric currents, and is unlikely to have burnt oneself.

Yet, by the IC curve among Fig. 1-2 and Fig. 2-2 as can be known,, when back bias voltage, all be the state that presents conducting no matter be diode or SCR.That is to say that the signal at I/O bond pad 10 places can be subjected to diode or the strangulation of SCR, and can't have the value of negative voltage to occur.That is, in the framework of Fig. 1-1 and Fig. 2-3, the signal on the I/O bond pad 10 is only to be unidirectional (greater than 0).In case an output/input need transmit two-way signal (can be greater than or less than 0), just must there be two-way overvoltage/electrostatic storage deflection (ESD) protection circuit to protect element among the IC.And in common overvoltage/electrostatic storage deflection (ESD) protection circuit, not so functional.

Summary of the invention

Main purpose of the present invention, be to provide a kind of two-way overvoltage/electrostatic storage deflection (ESD) protection circuit, not merely be prevent when power line be that the overvoltage/static discharge of positive voltage is impacted the infringement that may cause IC institute, and can prevent when power line be negative voltage the impact of EUS/ static discharge the influence that may cause.

According to above-mentioned purpose, the present invention proposes a kind of two-way overvoltage/electrostatic discharge protective device, is applicable to an I/O bond pad.This two-way overvoltage/electrostatic discharge protective device comprises two face electric crystal, two face electric crystal and the two face electric crystals that connect of one the 2nd PNP of connecing of one the one PNP of connecing of a NPN.Each is two to connect the face electric crystal and all has a base stage, one first and penetrate/collect the utmost point and one second and penetrate/collect the utmost point.This base stage that this NPN is two to connect the face electric crystal and a PNP be two to be connect second of face electric crystal and penetrates/collect the utmost point and the 2nd PNP pair and connect second of face electric crystal and penetrate/collect the utmost point and be connected.The base stage that the one PNP is two to connect the face electric crystal connect the face electric crystal with this NPN pair this first penetrate/collect the utmost point and constituted with one the one N type conductive layer.The one N type conductive layer is coupled to this I/O bond pad.The base stage that the 2nd PNP is two to connect the face electric crystal connect the face electric crystal with this NPN pair this second penetrate/collect the utmost point and constituted with one the 2nd N type conductive layer, and the 2nd N type conductive layer is coupled to a power line.

The one PNP is two to be connect first of face electric crystal and penetrates/collect and extremely can be coupled to this I/O bond pad.The 2nd PNP is two to be connect first of face electric crystal and penetrates/collect extremely and can be coupled to this power line.

Described overvoltage and electrostatic discharge protective device also include one first electric capacity, be connected between the two emitter-base bandgap gradings that connect the face electric crystal of a PNP and this I/O bond pad and one second electric capacity, be connected in the 2nd PNP pair and connect between the emitter-base bandgap grading and this power line of face electric crystal.

The present invention also proposes a kind of bidirectional overvoltage/electrostatic discharge protective device, is applicable to an output/input.This overvoltage/electrostatic discharge protective device includes a p type semiconductor layer, one the one N type conductive layer, one the 2nd N type conductive layer, one the one P type doped region, one the one N type doped region, one the 2nd P type doped region and one the 2nd N type doped region.The one N type conductive layer and the 2nd N type conductive layer are located at the surface of this p type semiconductor layer dividually.The one a P type doped region and a N type doped region all are located at the surface of a N type conductive layer.The 2nd P type doped region and the 2nd N type doped region all are located at the surface of the 2nd N type conductive layer.The one N doped region is to be coupled to an I/O bond pad, and the 2nd N doped region is to be coupled to a power line.

No matter voltage on this I/O bond pad is for magnitude of voltage is a plus or minus, as long as the certain limit of being no more than all can transmit signal and enter an internal circuit.

When on this I/O bond pad with this power line on cross-pressure when surpassing this certain limit, though cross-pressure be on the occasion of or negative value, overvoltage/electrostatic discharge protective device of the present invention all can be in good time conducting, the voltage on this I/O bond pad is lived in strangulation, discharges overvoltage/ESD stress to produce a lower power.

Described p type semiconductor layer is the suprabasil p type wells of a N type.

A described N type conductive layer and the 2nd N type conductive layer N type conductive layer are makes double-diffused drain electrode (double diffused drain, DDD) the N type double-diffused drain electrode district that is supervened during structure.

Described bidirectional overvoltage and electrostatic discharge protective device also include one the one N type doped region, be located at the surface of a N type conductive layer, be coupled to this I/O bond pad, and one the 2nd N type doped region, be located at the surface of the 2nd N type conductive layer, be coupled to this power line.

A described P type doped region is around a N type doped region.

Described the 2nd P type doped region is around a P type doped region.

A described N type doped region is around the 2nd P type doped region.

Be provided with a field oxide district between a described N type conductive layer and the 2nd N type conductive layer.

Described field oxide is provided with a polysilicon conducting layers in the district in addition.

Be provided with one first electric capacity between described polysilicon conducting layers and this I/O bond pad, and be provided with one second electric capacity between this polysilicon conducting layers and this power line.

A described P type doped region and the 2nd P type doped region form when being the source/drain electrode of the P type MOS electric crystal in making an integrated circuit simultaneously.

A described N type doped region and the 2nd N type doped region form when being the source/drain electrode of the P type MOS electric crystal in making an integrated circuit simultaneously.

Described p type semiconductor layer is for being located at the p type wells on the N mold base.

Described p type semiconductor layer is to be a P mold base.

For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:

Description of drawings

Fig. 1-1 is the common overvoltage/electrostatic storage deflection (ESD) protection circuit with diode enforcement;

Fig. 1-2 is the voltage-current curve figure of the diode among Fig. 1-1;

Fig. 2-1 is the profile and the component symbol of common thyristor;

Fig. 2-2 is the voltage-current curve figure of the diode among Fig. 2-1;

Circuit diagram when Fig. 2-3 is applied to the I/O bond pad for the SCR among Fig. 2-1;

Fig. 3-1 is the profile of an overvoltage/electrostatic discharge protective device of the present invention;

Fig. 3-2 is the equivalent circuit diagram of Fig. 3-1;

Fig. 3-3 is a kind of possible layout of overvoltage/static discharge of Fig. 3-1;

Fig. 4 is the voltage-current curve figure of the overvoltage/electrostatic discharge protective device among Fig. 3-1;

Fig. 5 is for using the embodiment of a p type wells that floats;

Fig. 6-1 is an another embodiment of the present invention;

Fig. 6-2 is the equivalent circuit diagram of Fig. 6-1; And

Fig. 7 uses the embodiment of a grid structure for the present invention.

Embodiment

Fig. 3-1 is the profile of an overvoltage/electrostatic discharge protective device of the present invention; Fig. 3-2 is the equivalent circuit diagram of Fig. 3-1.

Overvoltage/static discharge device of the present invention is made on the P mold base 30.In vertical direction, P+ doped region 32, N type well 34 and P mold base 30 have constituted the two face electric crystal Q1 that connect of pnp of a parasitism _PnpOn the vertical direction, P+ doped region 42, N type well 38 and P mold base 30 have constituted the two face electric crystal Q2 that connect of pnp of a parasitism _PnpIn the horizontal direction, N type well 38, P mold base 30 and N type well 34 have constituted another npn pair and have met face electric crystal Qnpn, are formed on field oxide 48 belows of separating between two N type wells (34,38).N+ doped region 36 is coupled to I/O joint sheet 44 as the electrical contact point of N type well 34.The same exhibition resistance (spread resistance) by N type well 34 of shape is constituted resistance R 1 between the base stage of Q1npn and the M+ doped region 36 _WellRelative, N+ doped region 40 is coupled to a power line V as the electrical contact point of N type well 38 _SsQ2 _NpnBase stage and N+ doped region 40 between the same exhibition resistance institute by N type well 38 of shape constitute resistance R 2 _WellQ _NpnBase stage and I/O bond pad 44 between have a diode D1 and to be constituted by the exhibition resistance of P mold base equivalent resistance R1 _SubQ _NpnBase stage and V _SsBetween have a diode D2 and to be constituted by the exhibition resistance of P mold base equivalent resistance R2 _SubWhen being the sources/drain electrode of NMOS in making IC and PMOS, N+ doped region and P+ doped region make simultaneously.

Capacitor C 1 _OptWith C2 _OptBe two selectivity (optional) electric capacity, the triggering speed that can promote overvoltage/static discharge device is respectively coupled between P+ doped region 32 and the N+ doped region 36 and between R+ doped region 42 and the N+ doped region 40, shown in Fig. 3-1.P+ doped region 32 and P+ doped region 42 are not coupled to any specific current potential electrically, and can be considered as is two unsteady doped regions.Equivalence element among Fig. 3-1 with and annexation rearrange and to be arranged in Fig. 3-2.

Fig. 3-3 is a kind of possible layout of overvoltage/static discharge of Fig. 3-1.Wherein, N type well 38 is provided with the field oxide (not shown) therebetween around N type well 34.Two ring-type doped regions in the N type well 38,1 is respectively N+ doped region 40 and P+ doped region from outside to inside.Two ring-type doped regions in the N type well 34 from outside to inside, are respectively P+ doped region 32 and N+ doped region 36.

Fig. 4 is the voltage-current curve figure of the overvoltage/electrostatic discharge protective device among Fig. 3-1.

When normal power operation, because two PN connect the existence of face (between P mold base 30 and N type well 34 and between P mold base 30 and N type well 38) among the Qnpn, though the signal on the I/O bond pad 44 be on the occasion of or for negative value, two PN connect face, and one of them must be a negative bias.As long as the intensity (amplitude) of the signal on the I/O bond pad 44 is not more than the breakdown voltage that two PN connect face; whole overvoltage/electrostatic discharge protective equipment just presents open circuit (opencircuit), shown in the voltage-current curve among vertical base target a and a ' among Fig. 4.Therefore, I/O bond pad 44 just can transmit positive voltage or the signal of negative voltage to internal circuit 46.

To V _SsIn positive overvoltage/electrostatic discharge event, very big positive voltage has appearred on the I/O bond pad 44, and caused the PN between P mold base 30 and the N type well 34 to connect the face collapse.By in the experiment as can be known, the P+ doped region 32, N type well 34, P mold base 30 and the N type well 38 that float have constituted false (pseudo) thyristor (SCR).After in a single day this false SCR is triggered, just the magnitude of voltage strangulation at I/O bond pad 44 places can be kept voltage V in quite little just holding _Hold+, shown in the voltage-current curve more than a.At this moment, discharging current I _Dis+See through the left half of circuit among Fig. 3-2, flow to V by I/O bond pad 44 _SsSo, the element of internal circuit 46 just is unlikely to be subjected to high voltage stress and damages.

Identical theory is to V _SsIn negative overvoltage/electrostatic discharge event, the magnitude of voltage strangulation at I/O bond pad 44 places is kept voltage V quite little negative holding _Hold-, shown in the voltage-current curve below a '.Discharging current I _Dis-see through the right half of circuit among Fig. 3-2, by V _SsFlow to I/O bond pad 44.So, the element of internal circuit 46 just is unlikely to be subjected to high voltage stress and damages.

This shows that bidirectional overvoltage/electrostatic discharge protective device of the present invention can be arranged at really and transmit the I/O bond pad that has positive/negative voltage signal.Simultaneously, also can be suitable overvoltage/electrostatic discharge protective is provided.

In order to reach two-way purpose, the P mold base among Fig. 3-1 must be (floating) that floats.Yet in integrated circuit (IC) design now, most P mold base all is directly to be couple to V _SsFor fear of the P mold base of ground connection and can't implement the present invention, therefore, overvoltage/electrostatic discharge protective device of the present invention also can utilize a unsteady p type wells to implement, as shown in Figure 5.

In Fig. 5, the p type wells 50 that floats is located in the N mold base 52, and, replace N type well (34 and 38) among Fig. 3-1 with N type double-diffused drain electrode doped region (54 and 56).N type double-diffused drain electrode doped region (54 and 56) is in semiconductor fabrication, in the time of making the source of the NMOS in the integrated circuit/drain electrode form the double-diffused drain electrode structure, makes simultaneously.For example,, all can in semiconductor fabrication, add one N type double-diffused drain electrode implanting ions and make, make the NMOS that is couple to the I/O bond pad have the source/drain electrode of double-diffused drain electrode structure generally in order to increase the static discharge tolerance.N type double-diffused drain electrode implanting ions is made the N type double-diffused drain electrode doped

region

54 and 56 that just can be used for forming simultaneously among Fig. 5.So, overvoltage/electrostatic discharge protective device of Fig. 5 just is compatible to present semiconductor fabrication fully.Yet the method that utilization N type double-diffused drain electrode implanting ions is made only is to implement one embodiment of the present of invention, and N type double-diffused drain electrode doped

region

54 and 56 also can use additive method to form.

P type doped region 32 can directly be couple to I/O bond pad 44, and P type doped region 42 can directly be couple to V _Ss, shown in Fig. 6-1.Fig. 6-2 is the equivalent circuit diagram of Fig. 6-1.Similar Fig. 4 of voltage-current curve figure of overvoltage/electrostatic discharge protective device of Fig. 6-1.In Fig. 6-2, the half of circuit with right one side of something in a symmetrical fully left side all presents the structure of similar SCR.Yet, different with the performance (voltage-current curve among Fig. 2-3) of general SCR, the curve display of Fig. 4 has gone out overvoltage/electrostatic discharge protective device of the present invention can provide the two-way good overvoltage/electrostatic discharge protective effect of I/O bond pad really.

Between two N type wells or N type double-diffused drain electrode doped region, also can form a grid structure.Simultaneously, can be with V _SsOr the transient voltage on the I/O bond pad 44 (transientvoltage) distributes some to arrive the structural conductive layer of grid, as shown in Figure 7.So, can quicken the triggering speed of SCR.Fig. 7 uses the embodiment of a grid structure for the present invention.Between two N type double-diffused drain electrode doped regions (54 and 56) a grid structure is arranged.The grid structure with a field oxide 48 be insulating barrier, with the polysilicon conducting layers 60 of top as grid.Coupling capacitance C1 _CplBe coupled between polysilicon conducting layers 60 and the I/O bond pad 44; Coupling capacitance C2-3 _PlBe coupled to polysilicon conducting layers 60 and I/O V _SsBetween.

Though the present invention with preferred embodiment openly as above; right its is not in order to qualification the present invention, any those of ordinary skills, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying application claim.

Claims

1. bidirectional overvoltage and electrostatic discharge protective device are applicable to an I/O bond pad, it is characterized in that, include:

One NPN is two to connect the face electric crystal, has a base stage, one first and penetrates/collect the utmost point and one second and penetrate/collect the utmost point;

The two face electric crystals that connect of one the one PNP; And

The two face electric crystals that connect of one the 2nd PNP;

Wherein, two these base stages that connect the face electric crystal of this NPN are connected with a two collection utmost point and the two collection utmost points that connect the face electric crystal of the 2nd PNP that connect the face electric crystal of a PNP;

The base stage that the one PNP is two to connect the face electric crystal connect the face electric crystal with this NPN pair this first penetrate/collect the utmost point and constituted with one the one N type conductive layer, and a N type conductive layer is coupled to this I/O bond pad; And

The base stage that the 2nd PNP is two to connect the face electric crystal connect the face electric crystal with this NPN pair this second penetrate/collect the utmost point and constituted with one the 2nd N type conductive layer, and a N type conductive layer is coupled to a power line.

2. bidirectional overvoltage as claimed in claim 1 and electrostatic discharge protective device, it is characterized in that described overvoltage and electrostatic discharge protective device include one first electric capacity in addition, be connected between the two emitter-base bandgap gradings that connect the face electric crystal of a PNP and this I/O bond pad and one second electric capacity, be connected in the 2nd PNP pair and connect between the emitter-base bandgap grading and this power line of face electric crystal.

3. bidirectional overvoltage as claimed in claim 1 and electrostatic discharge protective device, it is characterized in that the two emitter-base bandgap gradings that connect the face electric crystal of a described PNP are coupled to this I/O bond pad, the two emitter-base bandgap gradings that connect the face electric crystal of the 2nd PNP are coupled to this power line.

4. bidirectional overvoltage and electrostatic discharge protective device are applicable to an output/input, it is characterized in that, include:

One p type semiconductor layer;

One the one N type conductive layer and one the 2nd N type conductive layer are located at the surface of this p type semiconductor layer dividually;

One the one P type doped region is located at the surface of a N type conductive layer; And

One the 2nd P type doped region is located at the surface of a N type conductive layer;

Wherein, a N type conductive layer is to be coupled to an I/O bond pad, and a N type conductive layer is to be coupled to a power line.

5. bidirectional overvoltage as claimed in claim 4 and electrostatic discharge protective device is characterized in that described p type semiconductor layer is the suprabasil p type wells of a N type.

6. bidirectional overvoltage as claimed in claim 4 and electrostatic discharge protective device is characterized in that a described N type conductive layer and the 2nd N type conductive layer N type conductive layer are the N type double-diffused drain electrode district that is supervened when making the double-diffused drain electrode structure.

7. bidirectional overvoltage as claimed in claim 4 and electrostatic discharge protective device, it is characterized in that described bidirectional overvoltage and electrostatic discharge protective device also include one the one N type doped region, be located at the surface of a N type conductive layer, be coupled to this I/O bond pad, and one the 2nd N type doped region, be located at the surface of the 2nd N type conductive layer, be coupled to this power line.

8. bidirectional overvoltage as claimed in claim 7 and electrostatic discharge protective device is characterized in that a described P type doped region is around a N type doped region.

9. bidirectional overvoltage as claimed in claim 8 and electrostatic discharge protective device is characterized in that described the 2nd P type doped region is around a P type doped region.

10. bidirectional overvoltage as claimed in claim 9 and electrostatic discharge protective device is characterized in that a described N type doped region is around the 2nd P type doped region.

11. bidirectional overvoltage as claimed in claim 4 and electrostatic discharge protective device is characterized in that being provided with a field oxide district between a described N type conductive layer and the 2nd N type conductive layer.

12. bidirectional overvoltage as claimed in claim 10 and electrostatic discharge protective device is characterized in that also being provided with a polysilicon conducting layers in the described field oxide district.

13. bidirectional overvoltage as claimed in claim 11 and electrostatic discharge protective device, it is characterized in that being provided with one first electric capacity between described polysilicon conducting layers and this I/O bond pad, and be provided with one second electric capacity between this polysilicon conducting layers and this power line.

14. bidirectional overvoltage as claimed in claim 4 and electrostatic discharge protective device is characterized in that forming simultaneously when a described P type doped region and the 2nd P type doped region are the sources/drain electrode of the P type MOS electric crystal in making an integrated circuit.

15. bidirectional overvoltage as claimed in claim 4 and electrostatic discharge protective device is characterized in that forming simultaneously when a described N type doped region and the 2nd N type doped region are the sources/drain electrode of the P type MOS electric crystal in making an integrated circuit.

16. bidirectional overvoltage as claimed in claim 4 and electrostatic discharge protective device is characterized in that described p type semiconductor layer is for being located at the p type wells on the N mold base.

17. bidirectional overvoltage as claimed in claim 4 and electrostatic discharge protective device is characterized in that described p type semiconductor layer is to be a P mold base.