CN1219768A - Method and apparatus for heat transfer enhancing attachment - Google Patents
Method and apparatus for heat transfer enhancing attachment Download PDFInfo
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Abstract
用于连接陶瓷芯片载体组件的传热增强连接件的方法和装置。对于通腔式陶瓷基底,是用柔性粘接剂将散热块连接到基底上,该粘接剂具有足够的接合强度,以将散热块紧固到基底上,并具有足够的热导率,以允许从芯片到散热块形成适当的热流。粘接剂经过选择可提供足够的接合强度以将散热块紧固到基底上,而不会过分增大机械约束。粘接剂还能提供从芯片到散热块的直接导热路径。散热块粘合连接到芯片载体上。对于平面、多层式陶瓷基底,是用如上所述的相同粘接剂将散热器连接到基底上。
Methods and apparatus for joining heat transfer enhanced connectors of ceramic chip carrier assemblies. For through-cavity ceramic substrates, the heat slug is attached to the substrate with a flexible adhesive having sufficient bond strength to secure the heat slug to the substrate and sufficient thermal conductivity to Allows for proper heat flow from the chip to the thermal slug. The adhesive is selected to provide sufficient bond strength to secure the heat slug to the substrate without unduly increasing mechanical constraints. The adhesive also provides a direct thermal path from the die to the heat slug. The heat slug is adhesively attached to the chip carrier. For planar, multilayer ceramic substrates, the heat sink is attached to the substrate with the same adhesive as described above.
Description
本发明总体涉及电子器件封装以及含传热增强连接件的组件的构成。更具体讲,本发明描述的是采用特定粘接剂将金属散热块和散热器(heatspreader)牢固连接到陶瓷芯片载体上的方法和装置。The present invention relates generally to electronic device packages and the construction of assemblies including heat transfer enhancing connections. More specifically, the present invention describes methods and apparatus for securely attaching metal heat slugs and heat spreaders to ceramic chip carriers using specific adhesives.
实际用于通腔式陶瓷引线栅极阵列(PGA)组件以及平面多层式陶瓷基底的现有组装做法包括:将金属或复合金属传热增强装置连接在陶瓷载体一面的周边区域。传热增强连接件将芯片工作过程中所产生的热耗散掉。连接件通常由铜钨复合材料构成,钨占85%至100%之间,其余为铜,连接件上一般镀镍以形成用于钎焊合金的可温表面。典型的钎焊合金由铜和银(例如硅青铜)构成。陶瓷基底必须可选地具有金属化封接带,一般由钼或钨的同时熔烧厚膜组成,其后是一层无电或电解镍。Existing assembly practices that are actually used for through-cavity ceramic lead grid array (PGA) assemblies and planar multilayer ceramic substrates include attaching metal or composite metal heat transfer enhancers to the peripheral area of one side of the ceramic substrate. The heat-transfer-enhanced connector dissipates the heat generated during the operation of the chip. The connectors are typically constructed of a copper-tungsten composite, with between 85% and 100% tungsten and the balance copper, and are typically nickel-plated to form a warmable surface for the brazing alloy. Typical brazing alloys consist of copper and silver (eg silicon bronze). The ceramic substrate must optionally have a metallized sealing band, typically consisting of a co-fired thick film of molybdenum or tungsten, followed by a layer of electroless or electrolytic nickel.
传热增强连接件的钎焊一般是通过在还原条件下例如在氢气或合成气体中将组件在连续带式炉内软熔至850至1000摄氏度的温度范围来完成的,温度视钎焊合金的组成而定。软熔之后,在所有金属表面沉积第二层镍,然后镀金覆盖,以防腐并增强组件的美感。一旦连接件与陶瓷基底相连,采用市面可买到的基片粘合剂可将器件固连到连接件的内表面,然后引线接合到基底上的焊盘上。Brazing of heat transfer enhancing joints is generally accomplished by reflowing the components in a continuous belt furnace under reducing conditions such as hydrogen or forming gas to temperatures in the range of 850 to 1000 degrees Celsius, depending on the brazing alloy Composition depends. After reflow, a second layer of nickel is deposited on all metal surfaces and then covered with gold plating to prevent corrosion and enhance the aesthetics of the assembly. Once the connector is attached to the ceramic substrate, the device can be affixed to the inner surface of the connector using commercially available substrate adhesives and then wire bonded to pads on the substrate.
组件的封装是通过:利用较低熔化温度的合金(通常为80%金-20%锡的钎焊合金),将金属合金罩盖,例如镀金的柯伐(西屋公司注册商标),软熔到与连接底座相反的基底一侧的适当金属化钎焊带上。然后该组件须经密封漏泄测试,以确保其密封不存在漏泄。陶瓷载体所需的金属化,联同镀有铜-钨的连接件的固有高成本,致使组件成本增加并且工艺复杂。The assembly is encapsulated by reflowing a metal alloy cover, such as gold-plated Kovar® (registered trademark of Westinghouse Corporation), with a lower melting temperature alloy (typically an 80% gold-20% tin brazing alloy). to the appropriate metallized solder strip on the side of the substrate opposite the connection base. The assembly is then subjected to a seal leak test to ensure that there are no leaks in its seal. The required metallization of the ceramic carrier, combined with the inherently high cost of the copper-tungsten plated connectors, adds to the cost of the assembly and complicates the process.
传热增强连接件有两种主要类型。当构造通腔式PGA组件时,传热增强连接件为散热块。或者,当构造平面多层式陶瓷基底时,传热增强连接件指的是散热器。物理构造的区别主要在于:在通腔式PGA组件的情况下,芯片直接与散热块相连,而在平面多层陶瓷基底结构中,芯片直接与陶瓷基底相连。There are two main types of heat transfer enhancing connectors. When constructing through-cavity PGA assemblies, the heat transfer enhancement connector is a heat slug. Alternatively, when constructing a planar multilayer ceramic substrate, the heat transfer enhancing connector is referred to as a heat sink. The main difference in physical construction is that in the case of through-cavity PGA modules, the chip is directly attached to the heat sink, whereas in the planar multilayer ceramic substrate structure, the chip is directly attached to the ceramic substrate.
美国专利第5381042号(Lerner等)描述了一种用于将无氧铜散热块集成在模制引线框(leadframe)组件中的方法。引线接合基片紧固在铜散热块表面,并且在整个组件被环氧树脂封装以防损伤芯片之前,引线接合到铝制导体板上。然而通腔式或平面多层式陶瓷芯片载体分别需要使用金属散热块或散热器来向外部散热片或冷却装置传热,该发明没有对上述陶瓷芯片载体起作用的规定。US Patent No. 5381042 (Lerner et al.) describes a method for integrating an oxygen-free copper heat slug into a molded leadframe assembly. A wire-bond substrate is secured to the surface of the copper heat slug and wire-bonded to an aluminum conductor board before the entire assembly is epoxy-encapsulated to prevent damage to the chip. Whereas through-cavity or planar multi-layer ceramic chip carriers require the use of metal heat slugs or heat sinks to transfer heat to external heat sinks or cooling devices, respectively, the invention makes no provision for the aforementioned ceramic chip carriers to function.
本发明是一种新颖的方法和装置,用于将金属传热增强装置用市面可买到的粘接剂连接到多层陶瓷通腔式基底或平面多层式陶瓷基底上。连接件可用适当的含铝或铜的合金制成。随后可将铝合金连接件进行阳极氧化以产生多种多样的、用户确定的色彩,其中包括仿金色,使之外表看起来象那种昂贵得多的钎焊并镀金的铜钨连接件。The present invention is a novel method and apparatus for bonding metallic heat transfer enhancing devices to multilayer ceramic through-cavity substrates or planar multilayer ceramic substrates using commercially available adhesives. The connectors may be made of suitable alloys containing aluminum or copper. The aluminum alloy fittings can then be anodized to produce a wide variety of user-defined colors, including imitation gold to give the appearance of much more expensive brazed and gold-plated copper-tungsten fittings.
因此,本发明的目的之一是提供一种装置和方法,用于将传热增强装置用柔性硅基或环氧树脂基粘接剂连接到通腔式或非通腔式、平面多层式陶瓷载体上,上述粘接剂将对集成电路器件既形成直接的传热路径,又具有机械稳定性。Accordingly, it is an object of the present invention to provide an apparatus and method for attaching a heat transfer enhancing device to a through-cavity or non-through-cavity, planar multilayer On the ceramic carrier, the above-mentioned adhesive will form a direct heat transfer path to the integrated circuit device and have mechanical stability.
本发明的另一目的是在热膨胀系数(CTE)相匹配的散热块/散热器材料之间形成一种机械地紧固连接。这些材料包括用柔性环氧树脂粘结的铝、碳化硅、钼组成的复合材料。Another object of the present invention is to form a mechanically secure connection between heat slug/heat sink materials having matched coefficients of thermal expansion (CTE). These materials include aluminum, silicon carbide, and molybdenum composites bonded with flexible epoxy resins.
本发明的另一目的是在芯片与散热块/散热器之间形成一种经济高效的导热路径。Another object of the present invention is to form a cost-effective thermal conduction path between the chip and the heat slug/heat sink.
本发明的另一目的是提供一种方法和装置,用于在一般使用条件下确保器件与散热块/散热器之间的接合具有机械的与运行的完整性,使用条件例如重力、机械冲击、振动、高温、湿度以及由温度变化引起的反复热膨胀/收缩循环等。Another object of the present invention is to provide a method and apparatus for ensuring the mechanical and operational integrity of the bond between the device and the heat slug/heat sink under normal conditions of use, such as gravity, mechanical shock, Vibration, high temperature, humidity, and repeated thermal expansion/contraction cycles caused by temperature changes, etc.
本发明的另一目的是提供一种能够吸收热致应变而不损坏芯片载体或相关器件的方法和装置。Another object of the present invention is to provide a method and apparatus capable of absorbing thermally induced strain without damaging the chip carrier or related components.
本发明的另一目的是提供一种方法和装置,用于掩蔽掉不希望看到的环氧树脂填角,它是由散热器连接到陶瓷芯片载体底部时形成的。Another object of the present invention is to provide a method and apparatus for masking out the unwanted epoxy fillet formed when a heat spreader is attached to the bottom of a ceramic chip carrier.
本发明的最后一个目的是形成一种非密封的装配组件,它不需要高温软钎焊或硬钎焊步骤、以及相关的基底镀敷和金属化需求。A final object of the present invention is to form a non-hermetic assembly that does not require high temperature soldering or brazing steps, and the associated substrate plating and metallization requirements.
本发明的新颖特征和本发明特有的基本特性在所附权利要求中具体说明。附图仅供图解说明之用,并未按比例绘制。然而,参照下面的详细说明并连同附图将使发明本身,包括其组织结构和工作方法,得到最佳理解。The novel features and essential characteristics characteristic of the invention are set forth with particularity in the appended claims. The drawings are for illustration purposes only and are not drawn to scale. However, the invention itself, including its organization and method of operation, is best understood by reference to the following detailed description taken in conjunction with the accompanying drawings.
图1图示出一种用于将散热块连接到通腔式陶瓷芯片载体上的先有技术的示意图;FIG. 1 illustrates a schematic diagram of a prior art method for connecting a heat sink to a through-cavity ceramic chip carrier;
图2图示出本发明的一个优选实施例,其中使用的是陶瓷通腔式芯片载体;Figure 2 illustrates a preferred embodiment of the invention, wherein a ceramic through-cavity chip carrier is used;
图3图示出本发明的另一个优选实施例,其中使用的是平面式陶瓷芯片载体;以及Figure 3 illustrates another preferred embodiment of the invention, wherein a planar ceramic chip carrier is used; and
图4图示出本发明的又一个优选实施例。Figure 4 illustrates a further preferred embodiment of the present invention.
在陶瓷引线接合封装的热控制领域,从基片向外散热所经常使用的方法是通过将铜-钨复合散热块/散热器钎焊到陶瓷芯片载体的金属化带上来实现的。然后须将该组件镀镍或镀金以防腐并使组件美观。在通腔式PGA组件的情况下,采用适当的基片粘接剂将基片背接在铜-钨散热块的表面之一,该粘接剂包括:焊料合金,聚合物成分,或透明玻璃成分。随后的接合和组装操作一般为:开始先将基片引线接合到芯片载体的焊盘上,然后通过将一个罩盖紧固到陶瓷基底的反面来封装组件。尽管这种组装方法可对集成电路器件形成密封环境,但它需要一系列复杂的工艺步骤来完成。此外,镀敷的铜-钨散热块/散热器本身成本较高。为了提供更具有价格竞争力的封装方案,重要是简化组装与加工步骤,并降低元件成本。In the field of thermal control of ceramic wire bond packages, a common method of heat removal from the substrate is by brazing a copper-tungsten composite heat slug/sink to the metallization tape of the ceramic chip carrier. The component must then be nickel or gold plated for corrosion protection and aesthetics of the component. In the case of through-cavity PGA assemblies, the substrate is back-bonded to one of the surfaces of the copper-tungsten heat slug using a suitable substrate adhesive including: solder alloy, polymer composition, or clear glass Element. Subsequent bonding and assembly operations typically begin by wire bonding the substrate to pads on the chip carrier and then encapsulating the assembly by securing a cap to the reverse side of the ceramic substrate. Although this assembly method can form a sealed environment for integrated circuit devices, it requires a series of complex process steps to complete. Additionally, the plated copper-tungsten heat slug/sink itself is expensive. In order to provide a more price-competitive packaging solution, it is important to simplify assembly and processing steps and reduce component costs.
图1图示出一种用于将铜钨散热块30连接到通腔式陶瓷芯片载体5上的传统方法,其手段是将散热块30钎焊到金属化带35上。散热块钎焊合金40通常选用铜银合金,铜的重量百分比为0-20%,其余为银。通常,采用相同的钎焊合金40将输入/输出(I/O)引脚56与散热块30的连接件同时连到载体5的I/O焊盘55上。然而工业实际应用中也可使用具有较低熔化范围的钎焊材料来连接散热块。FIG. 1 illustrates a conventional method for attaching a copper-
在钎焊步骤之后,基底(载体5)通常镀以镍和金,以防腐并改善组件的外观。基片15通过基片连接材料10紧固到散热块30的内部底板上,该基片连接材料可从任意一种焊料基合金中选取,例如金锡合金、金硅合金、金锗合金;或聚合物基材料,例如填充银的氰酸酯粘接剂或填充型环氧树脂制剂。或者,基片连接材料10可以是透明玻璃成分,其设计软熔温度范围为350-450摄氏度。After the brazing step, the substrate (carrier 5) is usually plated with nickel and gold for corrosion protection and to improve the appearance of the assembly. The
紧固的基片15具有基片焊盘20,它被引线接合到载体5的相应载体焊盘27上。引线25连接着基片焊盘20和载体焊盘27。然后通过用焊料45将镀金的柯伐罩盖50软熔到基底上来封装组件。焊料45通常为金-锡共晶混合物(金占80%,锡占20%),其熔点为280摄氏度。这种类型的组件结构相当密封,这是由于专门使用了不渗透的(低扩散性)密封材料的缘故。然而该组件仍必须经过密封性测试,以保证达到合格的组件漏泄率。The secured
图2图示出本发明的一个优选实施例。已经测定出用较低成本的材料将散热块32连接到载体5上,可获得等效的热效和总体组件可靠性。这可通过使用已熟知的、市面可买到的聚合粘接剂36来实现。现在散热块32可由铝、铜、铝硅碳化物(如AlSiC)、钼的合金制成。在该实施例中,散热块32直接连接到基片15和载体5上。粘接剂36位于散热块32和载体5之间,而基片连接材料10位于散热块32和基片15之间。Figure 2 illustrates a preferred embodiment of the invention. It has been determined that using less costly materials to attach the heat slug 32 to the
传统的铜-钨散热块其典型的热导率在150到200瓦每米开尔文(W/m-k)之间,且其热膨胀系数(CET)与陶瓷载体的良好匹配,一般为百万分之6.8-7.5每摄氏度(ppm/℃),以在钎焊过程中和在实际场条件下降低应力。钼铜合金具有高热导率,其范围一般从铝的180W/m-k到铜的380W/m-k,但具有比铜-钨高得多的热膨胀系数。铝的热膨胀系数一般为22-23.5ppm/℃;铜的热膨胀系数一般为16-17ppm/℃。The typical thermal conductivity of traditional copper-tungsten heat sinks is between 150 and 200 watts per meter Kelvin (W/m-k), and its coefficient of thermal expansion (CET) is well matched with the ceramic carrier, generally 6.8 parts per million -7.5 per degree Celsius (ppm/°C) to reduce stress during brazing and under actual field conditions. Molybdenum-copper alloys have high thermal conductivity, typically ranging from 180 W/m-k for aluminum to 380 W/m-k for copper, but have a much higher coefficient of thermal expansion than copper-tungsten. The thermal expansion coefficient of aluminum is generally 22-23.5ppm/℃; the thermal expansion coefficient of copper is generally 16-17ppm/℃.
希望能够降低载体5与散热块32之间粘接的应力,一种方法是可选择基于铝硅碳化物(AlSiC)之混合物的合成材料,其具有可满足需要的热膨胀系数,其范围例如从7.3到14ppm/℃,并且还具150W/m-k左右的高热导率。已经测定钼也是一种合适的散热块材料,其热膨胀系数接近于载体5,热导率约为100W/m-k。表面处理随所述每种材料而改变,但可包括覆盖铝和AlSiC的阳极氧化层,或在铜和钼表面镀镍。It is hoped that the stress of bonding between the
对散热块粘接剂36的选择取决于该材料在可靠性测试和实际场条件下所显现的热致应力与应变。已发现柔性硅胶粘接剂和柔性环氧树脂基粘接剂能够满足热效要求。此外,它们形成一种机械地紧固装配,能够经受住温度范围从-65摄氏度到150摄氏度的液-液热冲击测试,而没有明显的、在剪切测试时会失效的粘接强度损失。The choice of
粘接剂36通常以预混的冷冻液方式供应,而在室温下的粘度致使它们可用自动涂布工具容易地涂布。这些材料的热导率变化范围很宽,低从柔性硅胶的0.18W/m-k,高到填充型环氧树脂的1.0-1.5W/m-k。在散热块32和载体5之间保证一条薄的接合线可获得最佳热效。用来形成薄的粘结接合厚度的装置一般是一种装配卡具,其对散热块32的底面和载体5的顶部均施加弹簧载荷,同时在适当的烘箱内在150-175摄氏度下将粘接剂固化至少一小时。
由于使用聚合粘接剂来连接散热块,致使组件非密封,可使用较新的快速固化的基片连接材料10将基片15紧固到散热块32上。基片15具有焊盘20,引线25与之相连。这些引线25还与载体5上的焊盘27相连。非密封组装也简化了组件的封装,因为罩盖42可用环氧树脂粘接剂38粘接到载体5上。由于组件是非密封的,漏泄测试降低为气泡检漏,它比使用不渗透密封材料并构造成密封组件时所需的测试要简单。Since the use of a polymeric adhesive to attach the heat slug renders the assembly non-hermetic, a newer fast curing die attach
图3图示出本发明的另一个实施例,其中借助已熟知的市面可买到的粘接剂36将散热器34连接到非通腔式(平面)引线接合载体7上。载体7与散热器34之间的粘结接合取消了如图1所详细讨论的高温纤焊工艺需求,因此降低了工艺复杂性。散热器34可用热导率高的金属制成,诸如铝和铜。对这些材料的表面处理包括铝的阳极氧化,它可以仿造出典型的镀金的颜色,还包括在铜散热器表面镀镍用于防腐和美观。FIG. 3 illustrates another embodiment of the invention in which a
因为散热器34的连接是由在相对低温(<200摄氏度)下固化的粘接剂36来完成的,因此可以先进行所有其它接合与组装步骤。此外,相似的组装操作可同时进行,以进一步降低总的组装周期。低成本、粘合连接的散热器既可用于密封组件也可用于非密封组件,对功能特性没有损害。散热器34是一个用来连接系统可靠运行所需外部散热片或冷却装置的有效基座。Because the attachment of the
本发明的另一方面是使散热块/散热器的远离组件的表面(如图中下侧所示,但实际上是上侧)尽可能平展。这样便于更好地与散热器接触,其结果使传热增强并使总体性能更好。Another aspect of the invention is to make the surface of the heat slug/heat sink away from the assembly (shown as the lower side in the figure, but actually the upper side) as flat as possible. This allows for better contact with the heat sink, which results in enhanced heat transfer and better overall performance.
图4图示出本发明的又一实施例。可将粘合连接的散热器34制造成能够掩蔽组装过程中所产生的粘接剂填角,如果认为它们有损于整个组件外观的话。散热器34具有外伸唇边60,它在y-z平面内延伸超出底座范围,挡住粘接剂填角,使得在组装之后当从x方向观察时,不会明显看到它们。Figure 4 illustrates yet another embodiment of the invention. The adhesively bonded
尽管已对本发明并连同特定优选实施例做了具体说明,但显然对于本领域技术人员而言,多种替代方案、改型及变更是显而易见的。因此期望所附权利要求将任何这种替代方案、改型及变更包含在本发明的真正范围和精神实质当中。While the invention has been described in conjunction with certain preferred embodiments, it is evident that various alternatives, modifications and alterations will be apparent to those skilled in the art. It is therefore intended that the appended claims cover any such alternatives, modifications and changes within the true scope and spirit of the invention.
Claims (11)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97106697A | 1997-11-14 | 1997-11-14 | |
| US971066 | 1997-11-14 |
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| Publication Number | Publication Date |
|---|---|
| CN1219768A true CN1219768A (en) | 1999-06-16 |
Family
ID=25517887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98123870A Pending CN1219768A (en) | 1997-11-14 | 1998-11-06 | Method and apparatus for heat transfer enhancing attachment |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR19990044862A (en) |
| CN (1) | CN1219768A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8222089B2 (en) | 2007-07-20 | 2012-07-17 | Samsung Electronics Co., Ltd. | Tape for heat dissipating member, chip on film type semiconductor package including heat dissipating member, and electronic apparatus including the same |
| CN101692443B (en) * | 2008-04-17 | 2013-03-27 | 三星电子株式会社 | Chip on film type semiconductor package and display device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100976812B1 (en) | 2010-02-08 | 2010-08-20 | 옵토팩 주식회사 | Electronic device package and method of manufacturing the same |
-
1998
- 1998-10-14 KR KR1019980042998A patent/KR19990044862A/en not_active Ceased
- 1998-11-06 CN CN98123870A patent/CN1219768A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8222089B2 (en) | 2007-07-20 | 2012-07-17 | Samsung Electronics Co., Ltd. | Tape for heat dissipating member, chip on film type semiconductor package including heat dissipating member, and electronic apparatus including the same |
| CN101692443B (en) * | 2008-04-17 | 2013-03-27 | 三星电子株式会社 | Chip on film type semiconductor package and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990044862A (en) | 1999-06-25 |
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