CN121046818A - Precursor feeding system and method for preparing TaC coatings by chemical vapor deposition - Google Patents
Precursor feeding system and method for preparing TaC coatings by chemical vapor depositionInfo
- Publication number
- CN121046818A CN121046818A CN202511553518.2A CN202511553518A CN121046818A CN 121046818 A CN121046818 A CN 121046818A CN 202511553518 A CN202511553518 A CN 202511553518A CN 121046818 A CN121046818 A CN 121046818A
- Authority
- CN
- China
- Prior art keywords
- precursor
- flow
- buffer tank
- tank
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
本发明公开了一种化学气相沉积法制备TaC涂层用前驱体进料系统及方法。该系统包括内壁均设有保温层且串联连接的前驱体罐、一级缓冲罐和二级缓冲罐，其中，前驱体罐内通过添加导热惰性材料改善前驱体TaCl5粉末的导热均匀性，实现稳定升华；一级缓冲罐内设导流堰实现气相稳流；二级缓冲罐内设蜂窝状导流芯以均流稳压。本发明解决了现有技术中TaCl5粉末升华不均、气流脉动大、混合效率低等问题，实现了气流波动≤5%的稳定输送，从而为后续获得厚度均匀的高致密TaC涂层、提高TaC涂层质量和沉积效率提供了前提保障。
This invention discloses a precursor feeding system and method for preparing TaC coatings using chemical vapor deposition. The system includes a precursor tank, a primary buffer tank, and a secondary buffer tank, all with insulating layers on their inner walls and connected in series. The precursor tank incorporates a thermally conductive inert material to improve the thermal conductivity uniformity of the TaCl5 powder precursor, achieving stable sublimation. The primary buffer tank features a flow guide weir to ensure stable vapor flow. The secondary buffer tank contains a honeycomb-shaped flow guide core for uniform flow and pressure stabilization. This invention solves the problems of uneven TaCl5 powder sublimation, large airflow pulsation, and low mixing efficiency in existing technologies, achieving stable delivery with airflow fluctuations ≤5%. This provides a prerequisite for obtaining a uniformly thick, highly dense TaC coating, improving TaC coating quality, and increasing deposition efficiency.
Description
Technical Field
The application belongs to the technical field of high-temperature coating preparation, and particularly relates to a precursor feeding system and method for preparing a TaC coating by a chemical vapor deposition method, which are used for realizing stable sublimation, air flow homogenization and conveying control of a TaCl precursor.
Background
Tantalum carbide (TaC) coatings are widely used in high temperature structural members, wear resistant tools, aerospace thermal protection materials and semiconductor devices due to their high melting point (about 3880 ℃), high hardness, excellent corrosion resistance and thermal stability. Chemical Vapor Deposition (CVD) is the main process for preparing a high-quality TaC coating, in order to obtain a TaC coating with high purity, good compactness, controllable thickness and excellent uniformity, sublimation and stable gas phase transport of a precursor tantalum pentachloride (TaCl 5) raw material are critical, and if uneven heating, fluctuation of evaporation rate or gas flow pulsation occur in the precursor feeding process, uneven thickness, increased defects and even deposition failure of the subsequent TaC coating can be caused. Therefore, how to realize uniform sublimation and stable and controllable delivery of the precursor is one of the key technical problems for ensuring the quality of the CVD-TaC coating.
Due to poor heat-conducting property of TaCl 5, uneven temperature field distribution and unstable gasification rate in the sublimation process in the precursor tank are caused, meanwhile, granular raw materials are easy to produce accumulation and unstable fluctuation in the powder feeding process, so that the concentration and flow rate of a gas phase tantalum source entering a deposition furnace are greatly changed, and the conventional gas buffering and mixing device is simple in structure, so that full mixing and stable supply of multicomponent process gases are difficult to realize. Therefore, there is a need for a feed system and method that achieves uniform sublimation, steady flow and efficient mixing of TaCl 5.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a precursor feeding system and a precursor feeding method for preparing a TaC coating by a chemical vapor deposition method, which are used for realizing stable sublimation, air flow homogenization and conveying control of a TaCl 5 precursor.
In order to achieve the above object, the invention provides a precursor feeding system for preparing TaC coating by chemical vapor deposition, which comprises a precursor tank, a primary buffer tank, a secondary buffer tank and a conveying pipeline, wherein the inner wall of the precursor tank is provided with an insulating layer, the precursor tank, the primary buffer tank and the secondary buffer tank are sequentially communicated through the conveying pipeline, wherein:
The outer side of the precursor tank is provided with a surrounding type heating device which comprises a feeding sublimation section, an air flow buffer section and an air flow steady flow section which are sequentially communicated, a heat conduction inert material is filled in the feeding sublimation section and used for improving the heat conduction of external precursor raw materials, a first flow equalizing disc used for reducing air flow fluctuation is arranged at the joint of the air flow buffer section and the air flow steady flow section, and a second flow equalizing disc used for reducing sublimation gas air flow fluctuation is arranged at the joint of the feeding sublimation section and the air flow buffer section;
the outlet end of the first-stage buffer tank is provided with a diversion weir for reducing the flow speed unevenness of the section;
The inside cellular water conservancy diversion core that is used for gaseous flow equalization steady voltage that is provided with of second grade buffer tank, second grade buffer tank exit end be connected with the conveying line of outside deposition furnace intercommunication.
In the feeding system, precursor TaCl 5 powder is mixed with the heat-conducting inert material in a feeding sublimation section, so that the heat transfer condition of a material bed is remarkably improved, uniform heating and stable sublimation of precursor TaCl 5 powder are realized, the fluctuation of the concentration of a TaCl 5 gas phase is reduced, and meanwhile, the fluctuation of the gas flow of the precursor gas phase is further reduced based on a first flow equalizing disc and a second flow equalizing disc;
The feeding system adopts a double-buffer structure of steady flow of the primary buffer tank and steady pressure of the secondary buffer tank, combines the design of the diversion weir and the honeycomb diversion core, effectively reduces the section flow velocity non-uniformity of the precursor gas phase, and further provides a guarantee for the continuity and uniformity of the subsequent TaC coating deposition process.
The precursor tank adopts a multi-point temperature control heating mode based on a surrounding type heating device to realize uniform temperature field of precursor raw materials.
The invention also provides a method for realizing precursor feeding based on the feeding system, which comprises the following steps:
s1, conveying precursor TaCl 5 powder into a precursor tank to be mixed with a heat-conducting inert material, sublimating the precursor TaCl 5 powder into a precursor gas phase through multi-point temperature control heating by a surrounding type heating device, and reducing the gas flow of the precursor gas phase through a first flow equalizing disc arranged in the precursor tank, wherein the mass ratio of the precursor TaCl 5 powder to the heat-conducting inert material is 3-5:1, and the heat-conducting inert material is one or more of quartz sand, carbon powder or alumina balls;
s2, enabling the precursor gas phase to enter a first-stage buffer tank through a conveying pipeline, and effectively reducing the section flow velocity of the precursor gas phase through a flow guiding weir arranged in the first-stage buffer tank so as to realize the steady flow of the precursor gas phase;
S3, the precursor gas phase enters a secondary buffer tank through a conveying pipeline, and under the action of the honeycomb flow guide core, the precursor gas phase is decomposed into a plurality of thin flows, so that pressure pulsation caused by local high-speed air flow is weakened, gas phase homogenization is realized, and then the precursor gas phase can be conveyed into an external deposition furnace through the conveying pipeline.
Compared with the prior art, the invention has the following beneficial technical effects:
(1) The sublimation is uniform, namely, the heat conduction inert material mixed with the precursor TaCl 5 powder is filled in the precursor tank, so that the heat conduction of a material bed can be effectively improved, the evaporation rate of TaCl 5 is stable, and the technical problem of large evaporation rate fluctuation caused by uneven temperature field in the sublimation process in the prior art is solved;
(2) The air flow is stable, namely the interface flow speed non-uniformity of the precursor gas phase can be reduced to below 15 percent by arranging the double buffer structures of the primary buffer tank for stabilizing the flow and the secondary buffer tank for stabilizing the pressure, the air flow fluctuation is controlled within 5 percent, the continuity and the uniformity of the subsequent TaC coating deposition process are further ensured, the high-compactness TaC coating with the thickness uniformity of +/-3 percent can be obtained, the utilization rate and the deposition efficiency of raw materials are effectively improved by stabilizing air supply, the preparation period is shortened while the energy consumption is reduced, and the production cost is reduced;
(3) The mixing is uniform, namely, a diversion weir is arranged in the primary buffer tank, natural homogenization is carried out by utilizing the static pressure of the gas, and a honeycomb diversion core is arranged in the secondary buffer tank to decompose the jet flow at the inlet into uniform trickles, so that stirring-free homogenization is realized, secondary pollution is avoided, and the mixing uniformity of the multi-component gas is remarkably improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Figure 1 is a schematic diagram of a precursor feeding system according to the present invention,
Figure 2 is a top view of figure 1,
Figure 3 is a cross-sectional view A-A of figure 2,
FIG. 4 is a flow chart of a method of precursor feeding based on a feed system in accordance with the present invention.
In the figure, the precursor tank is 100, the heating device is 110, the feeding sublimation section is 120, the airflow buffer section is 130, the airflow steady flow section is 140, the first flow equalizing disk is 150, the second flow equalizing disk is 160, the primary buffer tank is 200, the flow guiding weir is 210, the secondary buffer tank is 300, the honeycomb flow guiding core is 310, and the conveying pipeline is 400.
Detailed Description
The "range" disclosed herein is defined in terms of lower and upper limits, with the given range being defined by the selection of a lower and an upper limit, the selected lower and upper limits defining the boundaries of the particular range. Ranges that are defined in this way can be inclusive or exclusive of the endpoints, and any combination can be made, i.e., any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a particular parameter, it is understood that ranges of 60-110 and 80-120 are also contemplated. Furthermore, if minimum range values 1 and 2 are listed, and if maximum range values 3,4, and 5 are listed, then the following ranges are all contemplated as 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In the present application, unless otherwise specified, the resin range "a-b" represents a shorthand representation of any combination of real numbers between a and b, where a and b are both real numbers. For example, the resin range "0-5" means that all real numbers between "0-5" have been listed throughout, and "0-5" is only a shorthand representation of these resin combinations. When a certain parameter is expressed as an integer of 2 or more, it is disclosed that the parameter is, for example, an integer of 2,3,4, 5, 6, 7, 8, 9, 10, 11, 12 or the like.
The terms "comprising" and "including" as used herein mean open ended or closed ended, unless otherwise noted. For example, the terms "comprising" and "comprises" may mean that other components not listed may be included or included, or that only listed components may be included or included.
The term "or" is inclusive in this application, unless otherwise specified. For example, the phrase "a or B" means "a, B, or both a and B. More specifically, either condition satisfies the condition "A or B" that A is true (or present) and B is false (or absent), that A is false (or absent) and B is true (or present), or that both A and B are true (or present).
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the present invention, but are not intended to limit the invention in any way.
As shown in fig. 1 to 3, the application provides a precursor feeding system for preparing a TaC coating by a chemical vapor deposition method, which comprises a precursor tank 100, a primary buffer tank 200, a secondary buffer tank 300 and a conveying pipeline 400, wherein the inner walls of the precursor tank 100, the primary buffer tank 200 and the secondary buffer tank 300 are all provided with heat insulation layers, and the precursor tank 100, the primary buffer tank 200 and the secondary buffer tank 300 are sequentially communicated through the conveying pipeline 400, wherein:
The outer side of the precursor tank 100 is provided with a surrounding type heating device 110 which comprises a feeding sublimation section 120, an air flow buffer section 130 and an air flow steady flow section 140 which are sequentially communicated, a heat conduction inert material is filled in the feeding sublimation section 120 and used for improving the heat conduction of external precursor raw materials, a first flow equalizing disc 150 used for reducing air flow fluctuation is arranged at the joint of the air flow buffer section 130 and the air flow steady flow section 140, and a second flow equalizing disc 160 used for reducing sublimation gas air flow fluctuation is arranged at the joint of the feeding sublimation section 120 and the air flow buffer section 130;
The outlet end of the primary buffer tank 200 is provided with a diversion weir 210 for reducing the cross-sectional flow velocity unevenness;
The inside cellular water conservancy diversion core 310 that is used for gaseous flow equalization steady voltage that is provided with of second grade buffer tank 300, and the delivery line 400 that is connected with outside deposition furnace intercommunication is connected to second grade buffer tank 300 outlet end.
The feeding system adopts a double-buffer structure with steady flow of the primary buffer tank 200 and steady pressure of the secondary buffer tank 300, and combines the design of the diversion weir 210 and the honeycomb diversion core 310, so that the cross-section flow velocity non-uniformity of the precursor gas phase is effectively reduced, and further, the continuity and uniformity of the subsequent TaC coating deposition process are ensured.
As shown in fig. 4, the present application further provides a method for implementing precursor feeding based on the feeding system, which includes the following steps:
S1, conveying precursor TaCl 5 powder into a precursor tank 100 to be mixed with a heat-conducting inert material, sublimating the precursor TaCl 5 powder into a precursor gas phase through multi-point temperature control heating by a surrounding type heating device 110, and reducing the gas flow of the precursor gas phase through a first flow equalizing plate 150 arranged in the precursor tank 100, wherein the mass ratio of the precursor TaCl 5 powder to the heat-conducting inert material is 3-5:1, and the heat-conducting inert material is one or more of quartz sand, carbon powder or alumina balls;
It should be noted that in other embodiments, the precursor gas phase further reduces gas flow fluctuations via a second flow equalization plate 160 disposed within the precursor tank 100, wherein the second flow equalization plate 160 is disposed at the junction of the feed sublimation section 120 and the gas flow buffer section 130.
S2, the precursor gas phase enters the first-stage buffer tank 200 through the conveying pipeline 400, and the flow velocity of the cross section of the precursor gas phase is effectively reduced through the flow guiding weir 210 arranged in the first-stage buffer tank 200, so that the steady flow of the precursor gas phase is realized;
S3, the precursor gas phase enters the secondary buffer tank 300 through the conveying pipeline, and is decomposed into a plurality of fine flows under the action of the honeycomb flow guide cores 310, so that pressure pulsation caused by local high-speed air flow is weakened, gas phase homogenization is realized, and then the precursor gas phase can be conveyed into an external deposition furnace through the conveying pipeline 400.
To further illustrate the principles and technical effects of the present invention, a precursor vapor phase is provided to an external CVD deposition furnace based on the feed system and feed method as follows.
Example 1
400G of precursor tantalum pentachloride (TaCl 5) powder with the average grain diameter of 140-160 mu m is taken, the taken precursor tantalum pentachloride (TaCl 5) powder is sent into a precursor feeding system, and TaCl 5 is supplied to an external CVD deposition furnace through a conveying pipeline 400 after being processed by the precursor feeding system–Ar mixture and depositing TaC coating on the graphite substrate, the specific steps are as follows:
(1) Mixing the obtained precursor TaCl 5 powder with quartz sand according to a ratio of 4:1, loading the mixture into a feeding sublimation section 120, heating the mixture by a multi-point temperature control heating mode of a surrounding type heating device 110, controlling the temperature of the feeding sublimation section 120 to be 180+/-10 ℃, controlling the temperature of an airflow buffer section 130 to be 200+/-10 ℃, and controlling the temperature of an airflow steady flow section 140 to be 210+/-10 ℃, so as to realize step-by-step uniform sublimation of TaCl 5;
(2) The sublimated TaCl 5 gas phase passes through the flow guiding weir 210 arranged at the outlet of the primary buffer tank 200, so that the flow speed unevenness of the section of the TaCl 5 gas phase is reduced to 15%, and then passes through the honeycomb flow guiding core 310 arranged in the secondary buffer tank 300, so that inlet air flow pulsation is eliminated, and the steady flow and pressure stabilization of the TaCl 5 gas phase are realized.
(3) The TaCl 5 gas phase after pressure stabilization and current stabilization passes through the conveying pipeline 400 and–Ar is mixed and then enters an external CVD deposition furnace, and is deposited on the surface of the graphite substrate for 5 hours at 1300 ℃ and 2kPa, so as to form the TaC coating with the thickness of 40 mu m.
Example 2
Unlike example 1, in example 2, precursor TaCl 5 powder was mixed with quartz sand at a 3:1 ratio.
Example 3
Unlike example 1, in example 3, precursor TaCl 5 powder was mixed with quartz sand at a ratio of 5:1.
The fluctuation of the gas flow rate during the deposition in the external CVD deposition furnace and the uniformity of the thickness of the TaC coating after the deposition in examples 1 to 3 were examined, respectively, and the examination results are shown in Table 1.
TABLE 1 detection of fluctuation in gas flow rate during deposition in an external CVD deposition furnace and TaC coating thickness uniformity after deposition in examples 1-3
As can be seen from table 1, the precursor feed systems of examples 1-3 each provided a gas flow rate fluctuation of less than 4.2% for the mixed gas, and the thickness uniformity of the TaC coating deposited in the external CVD deposition furnace based on the mixed gas was within ±3%. Therefore, the precursor feeding system and method provided by the invention can realize stable sublimation, air flow homogenization and conveying control of the TaCl 5 precursor.
It should be noted that, in the above embodiment, the delivery pipe 400 is a stainless steel pipe, and the insulating layer is an electric heating belt wrapped around the precursor tank 100, the primary buffer tank 200, the secondary buffer tank 300, and the delivery pipe 400.
The precursor feeding system and the precursor feeding method for preparing the TaC coating by the chemical vapor deposition method provided by the application are described in detail. The principles and embodiments of the present application have been described herein with reference to specific examples, the description of which is intended only to facilitate an understanding of the core concepts of the application. It should be noted that it will be apparent to those skilled in the art that various modifications and adaptations of the application can be made without departing from the principles of the application and these modifications and adaptations are intended to be within the scope of the application as defined in the following claims.
Claims (8)
1. The precursor feeding system for preparing the TaC coating by the chemical vapor deposition method is characterized by comprising a precursor tank (100), a primary buffer tank (200), a secondary buffer tank (300) and a conveying pipeline (400), wherein heat preservation layers are arranged on the inner walls of the precursor tank (100), the primary buffer tank (200) and the secondary buffer tank (300) are sequentially communicated through the conveying pipeline (400), and the precursor feeding system comprises the following components:
The method comprises the steps that a surrounding type heating device (110) is arranged on the outer side of a precursor tank (100), the surrounding type heating device comprises a feeding sublimation section (120), an airflow buffering section (130) and an airflow steady flow section (140) which are communicated in sequence, a heat conducting inert material is filled in the feeding sublimation section (120) and used for improving the heat conductivity of an external precursor raw material, and a first flow equalizing disc (150) used for reducing airflow fluctuation is arranged at the joint of the airflow buffering section (130) and the airflow steady flow section (140);
The outlet end of the first-stage buffer tank (200) is provided with a diversion weir (210) for reducing the non-uniformity of the flow velocity of the section;
The inside of the secondary buffer tank (300) is provided with a honeycomb flow guide core (310) for gas flow equalization and pressure stabilization.
2. The feed system of claim 1, wherein the thermally conductive inert material is one or more of quartz sand, carbon powder, or alumina spheres.
3. The feeding system according to claim 1, characterized in that the connection of the feed sublimation section (120) and the gas flow buffer section (130) is provided with a second flow equalizing disc (160) for reducing fluctuations in the flow of sublimated gas.
4. The feeding system according to claim 1, wherein the outlet end of the secondary buffer tank (300) is connected with a conveying pipeline (400) communicated with an external deposition furnace.
5. The feed system of claim 1, wherein the precursor tank (100) employs a multi-point temperature controlled heating based on a surrounding heating device (110) to achieve a uniform temperature field of the precursor feedstock.
6. The feed system of claim 1, wherein the insulation is a polytetrafluoroethylene coated insulation.
7. A method of effecting precursor feeding based on the feeding system according to any one of claims 1-6, characterized in that the method comprises the steps of:
S1, conveying precursor TaCl 5 powder into a precursor tank (100) to be mixed with a heat-conducting inert material, sublimating the precursor TaCl 5 powder into a precursor gas phase through multi-point temperature control heating by a surrounding type heating device, and reducing the gas flow of the precursor gas phase through a first flow equalizing disc (150) arranged in the precursor tank (100);
S2, the precursor gas phase enters the first-stage buffer tank (200) through a conveying pipeline (400), and the flow velocity of the cross section of the precursor gas phase is effectively reduced through a flow guiding weir (210) arranged in the first-stage buffer tank (200), so that the steady flow of the precursor gas phase is realized;
S3, the precursor gas phase enters the secondary buffer tank (3) through the conveying pipeline (400), and is decomposed into a plurality of thin flows under the action of the honeycomb flow guide core (310), so that pressure pulsation caused by local high-speed air flow is weakened, gas phase homogenization is realized, and then the precursor gas phase can be conveyed into an external deposition furnace through the conveying pipeline (400).
8. The method according to claim 7, wherein in the step S1, the mass ratio of the precursor TaCl 5 powder to the thermally conductive inert material is 3-5:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202511553518.2A CN121046818A (en) | 2025-10-29 | 2025-10-29 | Precursor feeding system and method for preparing TaC coatings by chemical vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202511553518.2A CN121046818A (en) | 2025-10-29 | 2025-10-29 | Precursor feeding system and method for preparing TaC coatings by chemical vapor deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN121046818A true CN121046818A (en) | 2025-12-02 |
Family
ID=97811533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202511553518.2A Pending CN121046818A (en) | 2025-10-29 | 2025-10-29 | Precursor feeding system and method for preparing TaC coatings by chemical vapor deposition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN121046818A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6245151B1 (en) * | 1998-07-17 | 2001-06-12 | Advanced Technology Materials, Inc. | Liquid delivery system comprising upstream pressure control means |
| US6248399B1 (en) * | 1994-08-01 | 2001-06-19 | Franz Hehmann | Industrial vapor conveyance and deposition |
| EP1120475A1 (en) * | 2000-01-24 | 2001-08-01 | Sharp Kabushiki Kaisha | A method and system for MOCVD of PGO films |
| CN115928046A (en) * | 2021-08-06 | 2023-04-07 | Asm Ip私人控股有限公司 | Precursor delivery system and method |
| KR20240033242A (en) * | 2021-07-09 | 2024-03-12 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | Sublimation gas supply system with buffer tank and sublimation gas supply method |
| CN117778989A (en) * | 2023-12-28 | 2024-03-29 | 湖南德智新材料有限公司 | A tantalum carbide chemical vapor deposition method and system |
| US20240254623A1 (en) * | 2023-01-30 | 2024-08-01 | Samsung Electronics Co., Ltd. | Vapor supply apparatus |
| CN118557987A (en) * | 2024-06-27 | 2024-08-30 | 中船(邯郸)派瑞特种气体股份有限公司 | Rectification system and method for high-purity triethylaluminum |
-
2025
- 2025-10-29 CN CN202511553518.2A patent/CN121046818A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6248399B1 (en) * | 1994-08-01 | 2001-06-19 | Franz Hehmann | Industrial vapor conveyance and deposition |
| US6245151B1 (en) * | 1998-07-17 | 2001-06-12 | Advanced Technology Materials, Inc. | Liquid delivery system comprising upstream pressure control means |
| EP1120475A1 (en) * | 2000-01-24 | 2001-08-01 | Sharp Kabushiki Kaisha | A method and system for MOCVD of PGO films |
| KR20240033242A (en) * | 2021-07-09 | 2024-03-12 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | Sublimation gas supply system with buffer tank and sublimation gas supply method |
| CN115928046A (en) * | 2021-08-06 | 2023-04-07 | Asm Ip私人控股有限公司 | Precursor delivery system and method |
| US20240254623A1 (en) * | 2023-01-30 | 2024-08-01 | Samsung Electronics Co., Ltd. | Vapor supply apparatus |
| CN117778989A (en) * | 2023-12-28 | 2024-03-29 | 湖南德智新材料有限公司 | A tantalum carbide chemical vapor deposition method and system |
| CN118557987A (en) * | 2024-06-27 | 2024-08-30 | 中船(邯郸)派瑞特种气体股份有限公司 | Rectification system and method for high-purity triethylaluminum |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100560792C (en) | Growth of very uniform SiC epitaxial layers | |
| JP2001262353A (en) | Chemical vapor deposition method and chemical vapor deposition apparatus | |
| CN105441904A (en) | Gas spray device, chemical vapor deposition device and method | |
| CN103981512B (en) | A kind of controllable reaction thing equally distributed dual pathways spout structure | |
| CN107265416A (en) | The preparation method of pyrolytic boron nitride material | |
| CN115637419A (en) | Preparation method of tantalum-tantalum carbide composite coating and product thereof | |
| CN1829571B (en) | Metal organic chemical vapor deposition (MOCVD) method and apparatus for making multilayer high temperature superconducting (HTS) coated tape | |
| CN121046818A (en) | Precursor feeding system and method for preparing TaC coatings by chemical vapor deposition | |
| JP4058364B2 (en) | Semiconductor manufacturing equipment | |
| CN113699503B (en) | Graphene preparation method and device with multiphase composite carbon source on metal surface | |
| CN115584486A (en) | A kind of tantalum carbide coating product and preparation method | |
| CN102026919A (en) | Method for producing polycrystalline silicon | |
| CN115976498B (en) | A CVD device and method for preparing inner hole surface coating of parts | |
| CN108677165A (en) | A kind of novel ALD equipment precursor source carrier gas heating means | |
| US3442617A (en) | Method for depositing pyrolytic graphite | |
| CN216998556U (en) | Vapor deposition apparatus with uniform atmosphere field and temperature field | |
| Skandan et al. | Low‐pressure flame deposition of nanostructured oxide films | |
| CN109516706B (en) | Production process for preparing graphene coated cement filler by using solid carbon source | |
| JP7656914B2 (en) | Method and apparatus for forming transition metal chalcogenide layered films | |
| CN221956192U (en) | A multi-gas source gas inlet device for CVD | |
| CN121183271A (en) | PS-PVD thermal barrier coating and preparation method thereof | |
| CN216864379U (en) | A two-dimensional material vapor deposition reaction chamber and reaction device with uniform atmosphere field | |
| CN223705819U (en) | Gallium oxide epitaxy device combined with beam source furnace and compatible with multi-process route | |
| JP2008114097A (en) | Gas mixer, film forming device, and manufacturing method of thin film | |
| JP6758574B2 (en) | Method of manufacturing HfN film and HfN film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |