CN1206841A - Production method of optical waveguide device - Google Patents
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Abstract
Description
本发明涉及一种光波导器件的生产方法,且尤其是涉及这样一种光波导器件,其在传统方法的基础上,不需要诸如电极等外部偏置。The present invention relates to a method of producing an optical waveguide device, and more particularly to an optical waveguide device which does not require external bias such as electrodes on the basis of conventional methods.
很多的光波导器件已通过使用平面波导技术形成在平面基片上,且已对此种器件的高集成化进行了研究。一般讲,使用半导体生产技术或微电机系统(MEMS)技术制造光波导器件。Many optical waveguide devices have been formed on planar substrates by using planar waveguide technology, and high integration of such devices has been studied. In general, optical waveguide devices are fabricated using semiconductor production techniques or micro-electromechanical systems (MEMS) techniques.
图1A到1F描述了传统的制造光波导器件的方法。在传统的生产光波导器件的方法中,首先,如图1A中所示,在平面基片100上沉积一下包层110,并如图1B中所示沉积一用于形成波导的核心层140。然后,如图1C中所示,用波导图形对核心层140进行掩膜,并通过进行光刻及蚀刻而形成用于波导的掩膜图形150。然后,如图1D中所示蚀刻核心层140以形成波导130。这里,标号170表示被蚀刻的区域。在生产完波导后,如图1E中所示去除掩膜图形150,然后如图1F所示形成上部包层160,从而完成光波导器件的制作。1A to 1F describe a conventional method of manufacturing an optical waveguide device. In a conventional method of producing an optical waveguide device, first, as shown in FIG. 1A, a
上述的制造光波导器的常用方法不存在特别的实际问题,并已一直用到现在。然而,如果不严格按照上述传统方法的步骤的话,可以很容易地制造出能够工作在没有诸如电信号或热量等外部偏置的器件。同样,因为波导在生产过程中被充分地暴露,所以其很容易受到损坏。The conventional methods of manufacturing optical waveguides described above present no particular practical problems and have been used up to the present. However, without strictly following the steps of the conventional method described above, it is easy to fabricate devices that can operate without external biases such as electrical signals or heat. Also, because the waveguide is sufficiently exposed during production, it is easily damaged.
为了解决上述问题,本发明的一个目的是提供一种生产光波导器件的方法,其不需要电极等外部偏置,其中当形成波导时的暴露程度被减至最小,这样对波导的损害被降低,且也不需要在形成波导后的用于去除外部应力的额外步骤。In order to solve the above-mentioned problems, an object of the present invention is to provide a method of producing an optical waveguide device, which does not require external biasing such as electrodes, wherein the degree of exposure when forming the waveguide is minimized, so that damage to the waveguide is reduced , and no additional steps for removing external stress after forming the waveguide are required.
相应地,为了实现上述目的,提供了一种用于生产光波导器件的方法,其中的光波导器件具有一下包层、一光波导及一上包层,而该方法包含如下步骤:(a)在平面基片上形成下包层;(b)在下包层上形成光波导层,其比下包层具有更高的折射率;(c)在光波导层上形成上包层,其具有比光波导层低的折射率;(d)在上包层上形成预定的光波导图形;(e)根据光波导图形蚀刻上包层及光波导层;(f)在所蚀刻的产物上形成具有与上包层同样材料的材料层。Correspondingly, in order to achieve the above object, a method for producing an optical waveguide device is provided, wherein the optical waveguide device has a lower cladding layer, an optical waveguide and an upper cladding layer, and the method includes the following steps: (a) A lower cladding layer is formed on the planar substrate; (b) an optical waveguide layer is formed on the lower cladding layer, which has a higher refractive index than the lower cladding layer; (c) an upper cladding layer is formed on the optical waveguide layer, which has a higher refractive index than the optical waveguide layer. low refractive index of the waveguide layer; (d) forming a predetermined optical waveguide pattern on the upper cladding layer; (e) etching the upper cladding layer and the optical waveguide layer according to the optical waveguide pattern; A material layer of the same material as the overcladding.
最好地,形成下包层的材料与基片相同,而下包层、光波导层及上包层通过旋涂形成为具有在工作波长低的传输损耗的光学聚合物。同样,对在沉积每个下包层、光波导层及上包层后所形成的结构进行加热以提高膜质量。Preferably, the material forming the lower cladding layer is the same as that of the substrate, and the lower cladding layer, the optical waveguide layer and the upper cladding layer are formed by spin coating as an optical polymer having low transmission loss at an operating wavelength. Also, the structure formed after depositing each of the lower cladding layer, the optical waveguide layer, and the upper cladding layer is heated to improve film quality.
最好地,形成预定光波导图形的步骤(d)包含如下步骤:(d1)在上包层上形成材料薄膜,比光波导层具有更强的抗干蚀性;(d2)在材料薄膜上沉积光刻胶;(d3)校准在步骤(d2)所形成的结构上具有光波导图形的光掩膜并通过光掩膜紫外暴露光刻胶;(d4)在显像溶液中处理光刻胶以显像光刻胶图形;及(d5)通过干刻蚀材料薄膜形成作为光波导图形的掩膜图形,用光刻胶图形作为蚀刻掩膜。Preferably, the step (d) of forming a predetermined optical waveguide pattern includes the following steps: (d1) forming a material film on the upper cladding layer, which has stronger dry erosion resistance than the optical waveguide layer; (d2) forming a material film on the upper cladding layer Deposit photoresist; (d3) calibrate the photomask with optical waveguide pattern on the structure formed in step (d2) and expose photoresist through photomask ultraviolet; (d4) process photoresist in developing solution developing a photoresist pattern; and (d5) forming a mask pattern as an optical waveguide pattern by dry etching the material film, using the photoresist pattern as an etching mask.
同样,步骤(d)还包含如下步骤:(d11)将光刻胶沉积到上包层上;(d21)将具有预定光波导图形的光掩膜与步骤(d11)所形成的结构校准,并通过光掩膜紫外暴露光刻胶;(d31)在显像液中处理光刻胶以显像光刻胶图形;(d41)在光刻胶及上包层上沉积金属薄膜;及(d51)通过将子步骤(d41)所得的结构浸在有机溶剂中用于去除从而形成作为光波导图形的掩膜图形。Similarly, step (d) also includes the following steps: (d11) depositing a photoresist on the upper cladding layer; (d21) aligning a photomask having a predetermined optical waveguide pattern with the structure formed in step (d11), and UV exposure of the photoresist through a photomask; (d31) processing the photoresist in a developing solution to develop a photoresist pattern; (d41) depositing a metal film on the photoresist and the upper cladding layer; and (d51) A mask pattern as an optical waveguide pattern is formed by immersing the structure obtained in the sub-step (d41) in an organic solvent for removal.
最好地,在蚀刻步骤(e)中,下包层被部分地或完全地蚀刻。同样,在蚀刻后形成材料层的步骤(e)中,也可通过旋涂方法或浸泡方法形成材料层。Preferably, in etching step (e) the lower cladding layer is partially or completely etched. Likewise, in the step (e) of forming the material layer after etching, the material layer may also be formed by a spin coating method or a soaking method.
通过参考附图及对最佳实施例的详细描述对本发明的目的及优点有更清楚的了解。其中:Objects and advantages of this invention will be more clearly understood by referring to the accompanying drawings and detailed description of a preferred embodiment. in:
图1A到1F描述了生产光波导器件的传统方法;及1A to 1F describe a conventional method of producing an optical waveguide device; and
图2A到2F描述了根据本发明最佳实施例的生产光波导的方法。2A to 2F depict a method of producing an optical waveguide according to a preferred embodiment of the present invention.
根据本发明用于波导的光学聚合物在光波长处具有低的传输损耗。这样的一种光学聚合物,与包层相比具有大于0.3%的高折射率差(Δn),其用作波导的聚合物。下面将对根据本发明的用此种光学聚合物的生产光波导的方法进行描述。Optical polymers used in waveguides according to the invention have low transmission loss at optical wavelengths. Such an optical polymer, having a high refractive index difference ([Delta]n) of more than 0.3% compared to the cladding, is used as a polymer for waveguides. A method of producing an optical waveguide using such an optical polymer according to the present invention will be described below.
具有好的表面平整度诸如硅基片或玻璃的平面基片200被用作图2A中所示的基片。在基片200上形成下包层210。这里,具有比波导低的折射率且在工作波长处具有光学透明度的材料被用作下包层210。通过用在半导体生产中的旋涂方法沉积下包层210。最好地,所形成的下包层210的厚度大约为20μm。沉积后,对所得结构进行烘干以提高膜质量。构成下包层210的材料可与基片210相同。A
如图2B中所示,用于波导的光学聚合体,与下包层210相比,具有低的传输损耗及大于0.3%的折射率差(Δn),并通过旋涂方法沉积到下包层210,从而形成核心层240。在沉积后,进行烘干以提高膜质量。这里,所形成的核心层240的厚度大约为7μm。As shown in FIG. 2B, the optical polymer used for the waveguide has low transmission loss and a refractive index difference (Δn) greater than 0.3% compared with the
然后,如图2C中所示,用与下包层210相同的聚合物将上包层220旋涂到核心层240上。这里,上包层的最佳厚度大约为20μm。根据本发明的最佳实施例例,图2C示出的下包层210,具有比下包层210高的折射率的核心层240及上包层220,被顺序叠积到基片200上。Then, as shown in FIG. 2C , the
图2D描述了用于制造波导图形的形成掩膜图形250的步骤。用于掩膜图形的材料为聚合物、金属、硅石或硅,它们具有比核心层240更强的抗干蚀性。同样,由铬(Cr)制成的金属薄膜也可用于脱离工艺。FIG. 2D depicts the step of forming a
下面将对图2D中所示的通过干蚀形成掩膜图形250的步骤进行描述。首先,通过诸如溅射、E-束及热蒸发方法的真空沉积方法,在上包层220上沉积300-500埃厚的二氧化硅膜、聚合物。在通过旋涂方法沉积光刻胶(PR)后,具有图形的光掩膜被与基片校准然后用紫外线选择地辐射到沉积的沉积光刻胶(PR)上。然后,将PR浸在显像溶液中用于显像形成PR图形,然后用作为蚀刻掩膜的PR图形干蚀所得的结构以形成掩膜图形250。The step of forming the
另一方面,通过下面的脱离方法可形成掩膜图形。首先,通过旋涂方法在上包层200上沉积PR,具有图形的光掩膜与基片校准,且紫外(UV)线选择地辐射到沉积的PR上,然后,将PR浸入显像溶液中用于显像以形成PR图形。通过诸如溅射、E-束或热蒸发方法的真空沉积方法,在所形成的结构上沉积含Cr的金属薄膜,然后浸入诸如丙酮的有机溶剂中用于脱离,由此形成用于波导的掩膜图形250。On the other hand, a mask pattern can be formed by the following lift-off method. First, PR is deposited on the
在完成图2D所述的步骤后,对上包层220及核心层240进行竖直蚀刻。当在真空下对基片的顶部提供O2等离子体时,具有掩膜图形250的部分不被等离子体蚀刻而无掩膜图形250的部分被等离子体蚀刻。在蚀刻过程中,无须精确地控制到达将成为波导230的核心层240的蚀刻深度。也即,下包层210可被部分蚀刻。图2E示出了这样一种情况,其中下包层210被部分竖直蚀刻以形成波导区域。这里,标号270表示被蚀刻的部分,标号280表示蚀刻后的下包层,而290表示蚀刻后的上包层。After completing the steps described in FIG. 2D , vertical etching is performed on the
图2F描述了通过旋涂或浸入方法在图2E的被蚀刻所形成的结构上沉积用于下包层210的相同聚合物以形成包层260的最后步骤,然后热处理所得的结构以完成光波导器件。在此步骤中,可不用去除掩膜图形250来沉积包层,这样外力对波导的影响会被消除。FIG. 2F depicts the final step of depositing the same polymer used for the
在根据本发明的生产光波导器件的方法中,其不需诸如电极的外置,其在传统方法的基础上很容易生产。同样,波导的暴露在生产过程中被降至最小,从而减少了对波导的损害。In the method of producing an optical waveguide device according to the present invention, which does not require external placement such as electrodes, it can be easily produced on the basis of conventional methods. Also, exposure of the waveguide is minimized during production, thereby reducing damage to the waveguide.
通过根据本发明的生产方法,当生产器件时,能在无诸如电信号或热等外部偏置的情况下工作,工艺可顺利地进行,且波导的暴露被减至最小。因此,可减少在生产过程中对波导的任意的损害。By the production method according to the present invention, when producing a device, it is possible to operate without an external bias such as an electric signal or heat, the process can be smoothly performed, and the exposure of the waveguide is minimized. Thus, any damage to the waveguide during production can be reduced.
同样,在生产波导器件后无需执行去除影响波导的外力的额外步骤。Also, there is no need to perform additional steps to remove external forces affecting the waveguide after producing the waveguide device.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306747B (en) * | 2005-03-24 | 2014-10-22 | 株式会社东芝 | Battery pack and vehicle |
| CN105353461A (en) * | 2015-12-14 | 2016-02-24 | 中国科学院半导体研究所 | High Tolerance Coupled Waveguides |
| CN110998393A (en) * | 2017-05-19 | 2020-04-10 | 阿道特公司 | Optical interconnect module with 3D polymer waveguides |
-
1998
- 1998-07-21 CN CN 98103043 patent/CN1206841A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306747B (en) * | 2005-03-24 | 2014-10-22 | 株式会社东芝 | Battery pack and vehicle |
| CN105353461A (en) * | 2015-12-14 | 2016-02-24 | 中国科学院半导体研究所 | High Tolerance Coupled Waveguides |
| CN105353461B (en) * | 2015-12-14 | 2018-12-07 | 中国科学院半导体研究所 | Big tolerance coupled waveguide |
| CN110998393A (en) * | 2017-05-19 | 2020-04-10 | 阿道特公司 | Optical interconnect module with 3D polymer waveguides |
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