CN1206840A - Microstrip loaded optical waveguide - Google Patents
Microstrip loaded optical waveguide Download PDFInfo
- Publication number
- CN1206840A CN1206840A CN 98116168 CN98116168A CN1206840A CN 1206840 A CN1206840 A CN 1206840A CN 98116168 CN98116168 CN 98116168 CN 98116168 A CN98116168 A CN 98116168A CN 1206840 A CN1206840 A CN 1206840A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- optical waveguide
- dielectric layer
- laser instrument
- microstrip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 230000003287 optical effect Effects 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 239000000835 fiber Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 abstract description 11
- 238000010168 coupling process Methods 0.000 abstract description 11
- 238000005859 coupling reaction Methods 0.000 abstract description 11
- 239000013307 optical fiber Substances 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- Optical Integrated Circuits (AREA)
Abstract
本发明涉及一种微带加载的光波导(4),其中在一块半导体(1)上设置由一介电层(2)和一金属微带(3)组成的波导(4),和其中经一激光器或一玻璃光导纤维(7)实现光耦合进入光波导(4)。在激光器(7)或玻璃光导纤维后面串接一个在介电层(2)中用作光反射镜的刻蚀斜面(10)。
The invention relates to a microstrip-loaded optical waveguide (4), in which a waveguide (4) consisting of a dielectric layer (2) and a metal microstrip (3) is arranged on a semiconductor (1), and wherein the A laser or a glass optical fiber (7) enables optical coupling into the optical waveguide (4). An etching slope (10) used as a light reflection mirror in the dielectric layer (2) is connected in series behind the laser (7) or the glass optical fiber.
Description
The present invention relates to the optical waveguide that a kind of little band loads, the waveguide that is made of a dielectric layer and a metal micro-strip wherein is set on a block semiconductor, and wherein realize entering the optically-coupled of waveguide through a laser instrument or a glass optical waveguide fibre.
In order to reach high as far as possible switching speed, the known frequency of operation of in digital circuit, using more and more higher signal to be transmitted.But high like this frequency of operation must cause coupling and noise reciprocation (Rauschprozess) between adjacent transmission lines and element.May reach this degree in this this coupling and noise reciprocation, so that destroy the work of the digital circuit that in semiconductor, realizes or have serious interference at least.
Thereby the interference in order to prevent to occur under the situation of this noise reciprocation and coupling perhaps reduces this interference at least, and with digital circuit so design as much as possible, making them is insensitive to these noise reciprocations and coupling.This can perhaps also can realize by some minimum spacing is set by the arranging and the layout of element of suitable ingenious selection transmission line.But reducing all can appear in fact desirable in each case high switching speed.
Shown " integrated optics " by W.karth, Leipzig, Geest U.Portig scientific publication company in 1991, the 58th, 59,64-66, the 165-167 page or leaf known a kind of have partly lead/optical waveguide of dielectric layer/microstrip structure.
Therefore, task of the present invention is to make the optical waveguide that a kind of little band that is used for digital circuit loads, sort circuit can be avoided coupling and noise reciprocation as much as possible, and is to be reaching light and can being coupled into this optical waveguide with straightforward procedure of feature with the high switching speed.
For solving this task, the feature that this paper begins little band loaded lightguide of described type is, on laser instrument or etching inclined-plane that plays the reflective mirror effect in dielectric layer of serial connection, glass optical waveguide fibre back according to the present invention.
At this, this dielectric layer can be made up of silicon dioxide.Light enters the coupling input of waveguide can carry out through a glass optical waveguide fibre.The another kind possibility method of light coupling input waveguide is that this kind laser instrument preferentially is installed in semiconductor surface with the flip-chip field engineering with a kind of VCSEL laser instrument (Vcsel).At this, on etching inclined-plane of VCSEL laser instrument back serial connection as the silicon dioxide layer of reflective mirror.In reception one side a silicon PIN diode structure is set, is used to receive signal through the dielectric layer transmission.The optical directional coupler as switch of can packing in this dielectric layer, this directional coupler is corresponding with its state of a control, allows data pass through or blocks data.
That is to say that the waveguide that utilizes a kind of little band of optics to load for transmission signals the present invention replaces metal transmission line.
Further set forth the present invention by accompanying drawing below.These accompanying drawings are:
Fig. 1: the perspective diagram of little band loading waveguide according to the present invention; With
Fig. 2: by the synoptic diagram in waveguide shown in Figure 1 cross section.
Fig. 1 illustrates a kind of for example silicon P
-The semiconductor 1 that mixes has a silicon dioxide layer 2 thereon.On this silicon dioxide layer 2, the metal micro-strip 3 of aluminium is for example arranged, the zone of the silicon dioxide layer 2 of this little band under being positioned at it constitutes a little band loaded lightguide 4.On the surface of silicon dioxide layer 2, a lead frame 5 is shown, at the edge of semiconductor 1 for transmission of electric signals connects 6 to VCSEL laser instruments 7 of a pressure welding silk by this framework.Stop this metal tape 3 below this VCSEL laser instrument 7, this is little to begin to lead to a PIN diode structure 8 with a P doped region 9 and a N doped region 13 from here with 3.
Fig. 2 illustrates a section II-II by Fig. 1 device, has for the sake of clarity omitted the section line among the figure.See that as knowing from Fig. 2 being positioned at VCSEL laser instrument 7 belows is etching inclined-planes 10, this inclined-plane is a planar structure, and the reflective mirror of the light of being launched as VCSEL laser instrument 7.
When work, an electric signal is transferred to VCSEL laser instrument 7 through lead frame 5 and pressure welding silk 6, and converts a light signal there to.The light signal that this is provided by VCSEL laser instrument 7, reflection on the etching inclined-plane 10 of silicon dioxide layer 2, and through this etching inclined-plane by little band loading waveguide 4, be positioned at the metal micro-strip 3 that is used for guide wave below, be transferred to PIN diode 8 in silicon dioxide layer 2, light signal converts electric signal heavily again to herein.This PIN diode 8 also has P
+And n
+ Doped region 11 and 11 ' be used for being connected with unshowned conductor conduction.Transmission path at this light schematically shows with a dotted line 12 in Fig. 2.
VCSEL laser instrument 7 preferentially is assemblied on the silicon dioxide layer 2 with the flip-chip field engineering.But, replace so a kind of laser instrument, also can use a kind of simple glass optical waveguide fibre, be used for loaded lightguide 4 is with in the light coupling in a subtle way.Silicon dioxide is a kind of material that is used for the preferential employing of this kind waveguide, because silicon dioxide is transparent in a wide frequency ranges of light wave, and can be realized in a kind of MOS technology fully.In this waveguide, also can for example insert a directional coupler and be used for the switch light signal, so that light pulse subsequently can be left semiconductor.
A kind of digital switch circuit with waveguide of the present invention is particularly advantageous, because the noise reciprocation that electric coupling or the precipitous edge by signal cause in fact do not occur.Therefore, not coupling and noise reciprocation and realize a kind of extra high switching speed of sort circuit.
The material of dielectric layer 2 is not limited only to silicon dioxide.This layer also can use other material, and these materials are transparent in desired wavelength coverage.Can certainly replace aluminium to make metal micro-strip 3 with other metal or polysilicon.The present invention also can be used in the circuit that bipolar circuit replaces the MOS technology, though a kind of technology in back is a kind of preferential application.
Claims (5)
1. the optical waveguide (4) that little band loads, wherein go up the waveguide (4) that is made of a dielectric layer (2) and a metal micro-strip (3) is set at a block semiconductor (1), wherein realize that through a laser instrument or a glass optical waveguide fibre (7) optically-coupled enters optical waveguide (4), it is characterized in that, on laser instrument or etching inclined-plane (10) that in dielectric layer (2), is used as reflective mirror of serial connection, glass optical waveguide fibre (7) back.
2. according to the waveguide of claim 1, it is characterized in that dielectric layer (2) is made up of silicon dioxide.
3. according to the waveguide of claim 1 or 2, it is characterized in that laser instrument (7) is a VCSEL laser instrument of installing with flip-chip.
4. according to the waveguide of one of claim 1 to 3, it is characterized in that, a PIN photodiode structure (8) is set in reception one side.
5. according to the waveguide of one of claim 1 to 4, it is characterized in that, an optical directional coupler is set in dielectric layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98116168 CN1206840A (en) | 1997-07-25 | 1998-07-24 | Microstrip loaded optical waveguide |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732180.1 | 1997-07-25 | ||
| CN 98116168 CN1206840A (en) | 1997-07-25 | 1998-07-24 | Microstrip loaded optical waveguide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1206840A true CN1206840A (en) | 1999-02-03 |
Family
ID=5224963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 98116168 Pending CN1206840A (en) | 1997-07-25 | 1998-07-24 | Microstrip loaded optical waveguide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1206840A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105026919A (en) * | 2013-03-15 | 2015-11-04 | 西门子公司 | Sensor and method for determining a dielectric property of a medium |
-
1998
- 1998-07-24 CN CN 98116168 patent/CN1206840A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105026919A (en) * | 2013-03-15 | 2015-11-04 | 西门子公司 | Sensor and method for determining a dielectric property of a medium |
| US10317444B2 (en) | 2013-03-15 | 2019-06-11 | Siemens Aktiengesellschaft | Sensor and method for determining a dielectric property of a medium |
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| WD01 | Invention patent application deemed withdrawn after publication | ||
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