CN120601876A - A driving circuit, control method and power chip of a power device - Google Patents
A driving circuit, control method and power chip of a power deviceInfo
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- CN120601876A CN120601876A CN202510746664.0A CN202510746664A CN120601876A CN 120601876 A CN120601876 A CN 120601876A CN 202510746664 A CN202510746664 A CN 202510746664A CN 120601876 A CN120601876 A CN 120601876A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
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- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Conversion In General (AREA)
Abstract
本申请实施例提供一种功率器件的驱动电路、控制方法及功率芯片，该驱动电路至少包括：第一开关模块、第二开关模块、第三开关模块、第四开关模块、第五开关模块和能量处理模块，其中，第一开关模块和第二开关模块分别与能量处理模块相连，能量处理模块还分别与第三开关模块和第五开关模块相连，第二开关模块通过第四开关模块与第五开关模块相连，第五开关模块与功率器件相连，功率器件还与驱动模块相连；通过控制第三开关模块和第五开关模块的通断，对功率器件进行通断状态的控制，提供一种无需使用更多的片外无源器件、集成度高、可动态切换工作模式的功率器件驱动电路结构，节省成本，还实现了双模式切换控制。
An embodiment of the present application provides a driving circuit, a control method, and a power chip for a power device. The driving circuit includes at least: a first switch module, a second switch module, a third switch module, a fourth switch module, a fifth switch module, and an energy processing module, wherein the first switch module and the second switch module are respectively connected to the energy processing module, and the energy processing module is also respectively connected to the third switch module and the fifth switch module, the second switch module is connected to the fifth switch module through the fourth switch module, the fifth switch module is connected to the power device, and the power device is also connected to the driving module; by controlling the on and off of the third switch module and the fifth switch module, the on and off state of the power device is controlled, providing a power device driving circuit structure that does not require the use of more off-chip passive components, has high integration, and can dynamically switch working modes, saves costs, and also realizes dual-mode switching control.
Description
Technical Field
The present application relates to the field of electronic circuits, and in particular, to a driving circuit, a control method and a power chip of a power device.
Background
In recent years, gallium nitride (GaN) devices have been widely used in high-frequency and high-efficiency power electronic systems due to their excellent switching performance, high breakdown voltage, low on-resistance, and other characteristics. Among many GaN devices, depletion mode (D-mode) GaN devices are attracting attention from research and industry due to their more stable electrical performance and larger withstand voltage margin. However, since the D-mode GaN device is a normally open device, a negative gate voltage needs to be provided to realize turn-off in the driving process, and an additional negative voltage power supply and an additional off-chip passive device are generally required, which increases the complexity and cost of the system, so how to realize control of the gallium nitride (GaN) device under the condition of reducing the cost is an urgent problem to be solved at present.
Disclosure of Invention
According to the technical scheme, the driving circuit of the power device at least comprises a first switch module, a second switch module, a third switch module, a fourth switch module, a fifth switch module and an energy processing module, wherein the first switch module and the second switch module are respectively connected with the energy processing module, the energy processing module is also respectively connected with the third switch module and the fifth switch module, the second switch module is connected with the fifth switch module through the fourth switch module, the fifth switch module is connected with the power device, and the power device is also connected with the driving module; the on-off state of the power device is controlled by controlling the on-off state of the third switch module and the fifth switch module, in the embodiment of the application, the driving circuit is formed by a plurality of switch tubes, one Si-MOSFET and one off-chip inductor, different circuit architectures are obtained by changing the on-off state of the switch tubes in the driving circuit, and further different working modes are realized, so that the structure can realize grid energy recovery in a soft switch mode, theoretically realize zero grid driving loss, realize adjustable slew rate of gallium nitride in a hard switch mode, meet the actual requirements of the power device on high efficiency, high reliability and multi-mode compatibility, save cost, dual mode handoff control is also implemented.
In a first aspect, some embodiments of the present application provide a driving circuit of a power device, where the driving circuit at least includes a first switch module, a second switch module, a third switch module, a fourth switch module, a fifth switch module, and an energy processing module, where the first switch module and the second switch module are respectively connected to the energy processing module, the energy processing module is further respectively connected to the third switch module and the fifth switch module, the second switch module is connected to the fifth switch module through the fourth switch module, the fifth switch module is connected to the power device, and the power device is further connected to the driving module;
And controlling the on-off state of the power device by controlling the on-off state of the third switch module and the fifth switch module.
According to some embodiments of the application, a driving circuit is formed by a plurality of switching tubes, a Si-MOSFET and an off-chip inductor, different circuit architectures are obtained by changing the on-off state of the switching tubes in the driving circuit, and further different working modes are realized, so that the structure can realize gate energy recovery in a soft switching mode, theoretically zero gate driving loss and realize adjustable slew rate of gallium nitride in a hard switching mode by providing a power device driving circuit structure which does not need to use more off-chip passive devices and has high integration level and can dynamically switch the working modes, thereby meeting the actual demands of high efficiency, high reliability and multi-mode compatibility in the power device, saving the cost and realizing dual-mode switching control.
Optionally, the first switch module, the second switch module, the third switch module, the fourth switch module and the fifth switch module are respectively switch tubes. According to some embodiments of the application, mode switching can be realized by adopting a plurality of switching tubes, the internal inductance, capacitance and switching network of the driver are fully multiplexed on the circuit structure, external negative-pressure power supply or off-chip passive devices are not required to be additionally introduced, the integration level is remarkably improved, and the system volume is reduced.
Optionally, the first end of the first switching tube is connected with the first power supply, the second end of the first switching tube is connected with the first end of the second switching tube, and the second end of the second switching tube is connected with the second power supply through the first capacitor;
The second end of the first switching tube is connected with the first end of the energy processing module, the second end of the energy processing module is connected with the second end of the third switching tube and the first end of the fifth switching tube respectively, the first end of the third switching tube is connected with the second power supply, the second end of the fifth switching tube is connected with the grid electrode of the power device, the second end of the second switching tube is connected with the second end of the fourth switching tube, and the first end of the fourth switching tube is connected with the second end of the fifth switching tube. Some embodiments of the present application provide a power device driving circuit structure capable of dynamically switching an operating mode without using more off-chip passive devices, with high integration level, which can realize gate energy recovery in a soft switching mode, theoretically zero gate driving loss, and realize adjustable slew rate of gallium nitride in a hard switching mode, so as to meet the actual requirements of high efficiency, high reliability and multi-mode compatibility in a power device power system.
In a second aspect, some embodiments of the present application provide a driving method of a power device, applied to the driving circuit of the power device according to any one of the first aspect, the method including:
determining a reverse boost buck converter according to the first switch module, the second switch module and the energy processing module when the third switch module is turned on;
generating negative pressure of the power device according to the reverse step-up/step-down converter so as to enable the power chip to work in a traditional direct driving mode;
Determining a resonant circuit according to the first switch module, the second switch module, the third switch module, the fourth switch module and the energy processing module when the fifth switch module is turned on;
And controlling the grid electrode of the power device to charge and discharge according to the resonant circuit so as to enable the power chip to work in a resonant direct driving mode.
According to the drive circuit of the dual-mode power device, provided by the embodiments of the application, the effective recovery of grid energy is realized through a resonance drive mode, the drive consumption is obviously reduced, the drive circuit is particularly suitable for a high-frequency soft switch working scene, and compared with a traditional resonance drive scheme, the number of switches and inductors is reduced. Optionally, in the conventional direct drive mode, the method further comprises:
and switching the first switch module and the second switch module according to the magnitude of the voltage preset value to obtain a first control circuit and a second control circuit, wherein the first control circuit comprises a first switch module, a third switch module and the energy processing module, and the second control circuit comprises a second switch module, a third switch module and the energy processing module.
Optionally, the fourth switch module and the fifth switch module are configured to drive the power device, and adjust a charging rate of the power device by adjusting a gate voltage of the fifth switch module.
Some embodiments of the application realize dv/dt control and di/dt adjustment of the GaN drain terminal by adjusting the equivalent impedance of the gate driving path in the CDD mode.
Optionally, in the resonant direct drive mode, the method comprises:
Under the condition that the first switch module, the fourth switch module and the fifth switch module are conducted, the energy processing module is charged, the fourth switch module is turned off, and the grid electrode of the power device is charged, so that the grid voltage of the power device is changed from negative pressure to 0;
the energy processing module discharges under the condition that the second switch module, the third switch module and the fifth switch module are conducted;
And controlling the grid voltage of the power device to be 0 under the condition that the third switch module and the fifth switch module are conducted.
Optionally, in the resonant direct drive mode, the method comprises:
charging the energy processing module when the second switch module, the third switch module and the fifth switch module are conducted;
Under the condition that the second switch module and the fifth switch module are conducted, forming a resonant circuit according to the grid capacitance of the power device, the energy processing module of the fifth switch module and the second switch module;
In the inductance discharging process, the first switch module, the fourth switch module and the fifth switch module are conducted to generate a negative source driver power supply voltage, and energy of the energy processing module is transferred to a first power supply;
And under the condition that the fourth switch module and the fifth switch module are conducted, controlling the grid voltage of the power device to be the power supply voltage of the negative source driver. Some embodiments of the application construct an internal resonant path in RDD mode to achieve gate charge-discharge recycling. By changing the charging time of the inductor, the negative voltage capable of turning off gallium nitride is maintained.
In a third aspect, some embodiments of the present application provide a power chip, where the power chip includes at least one or more power devices, and the driving circuit of any one of the power devices in the first aspect is used to drive one power device, or the second driving circuit is used to drive the multiple power devices;
the power chip further comprises a bootstrap circuit, wherein the bootstrap circuit is used for supplying power to a driving circuit of the power device.
Optionally, the bootstrap circuit at least comprises a bootstrap capacitor, wherein the bootstrap capacitor is used for supplying power to the third switch module and the fifth switch module, the bootstrap capacitor at least comprises a main capacitor and a slave capacitor, the main capacitor is used for supplying energy for opening and closing the third switch module and the fifth switch module, and the slave capacitor is used for reducing ripple waves of a power supply of the third switch module.
Drawings
In order to more clearly illustrate the technical solutions of some embodiments of the present application, the drawings that are required to be used in some embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and should not be construed as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort to those of ordinary skill in the art.
Fig. 1 is a schematic diagram of a driving circuit of a power device according to an embodiment of the present application;
fig. 2 is a schematic diagram of a driving circuit in CDD mode according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a driving circuit for turning on D-GaN in RDD mode according to an embodiment of the present application;
FIG. 4 is a schematic diagram of a circuit for turning off D-GaN in RDD mode according to an embodiment of the present application;
Fig. 5 is a schematic structural diagram of a power chip according to an embodiment of the present application;
fig. 6 is a schematic diagram of a bootstrap circuit according to an embodiment of the present application;
FIG. 7 is a schematic diagram of a bootstrap circuit in RDD operation mode according to an embodiment of the present application;
fig. 8 is a schematic diagram of a CDD operation mode of a bootstrap circuit according to an embodiment of the present application;
FIG. 9 is a schematic diagram of a circuit for driving two D-GaN circuits according to an embodiment of the application.
Detailed Description
The technical solutions of some embodiments of the present application will be described below with reference to the drawings in some embodiments of the present application.
It should be noted that like reference numerals and letters refer to like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
In recent years, gallium nitride (GaN) devices have been widely used in high-frequency and high-efficiency power electronic systems due to their excellent switching performance, high breakdown voltage, low on-resistance, and other characteristics. Among many GaN devices, depletion mode (D-mode) GaN devices are attracting attention from research and industry due to their more stable electrical performance and larger withstand voltage margin. However, since the D-mode GaN device is a normally open device, a negative gate voltage is required to be provided to achieve turn-off during driving, and an additional negative voltage power supply and an additional off-chip passive device are generally required, which increases complexity and cost of the system, so how to control a gallium nitride (GaN) device can be achieved under the condition of reducing cost, and in this regard, some embodiments of the present application provide a driving circuit for a power device, which at least includes a first switch module, a second switch module, a third switch module, a fourth switch module, a fifth switch module, and an energy processing module, where the first switch module and the second switch module are respectively connected to the energy processing module, the energy processing module is also respectively connected to the third switch module and the fifth switch module, the second switch module is connected to the fifth switch module through the fourth switch module, the fifth switch module is connected to the power device, and the power device is also connected to the driving module; the on-off state of the power device is controlled by controlling the on-off state of the third switch module and the fifth switch module, and in the embodiment of the application, the driving circuit is formed by a plurality of switch tubes, one Si-MOSFET and one off-chip inductor, different circuit architectures are obtained by changing the on-off state of the switch tubes in the driving circuit, and further different working modes are realized, so that the structure can realize grid energy recovery in a soft switch mode, theoretically realize zero grid driving loss, realize the slew rate adjustment of gallium nitride in a hard switch mode, and meet the requirements of high efficiency in a power system of the power device, the actual requirement of high reliability and multi-mode compatibility saves cost and also realizes the control of dual-mode switching.
As shown in fig. 1, the embodiment of the application provides a driving circuit of a power device, which at least comprises a first switch module S1, a second switch module S2, a third switch module S3, a fourth switch module S4, a fifth switch module S5 and an energy processing module L R, wherein the first switch module S1 and the second switch module S2 are respectively connected with the energy processing module L R, the energy processing module L R is also respectively connected with the third switch module S3 and the fifth switch module S5, the second switch module S2 is connected with the fifth switch module S5 through the fourth switch module S4, the fifth switch module S5 is connected with the power device, and the power device is also connected with the driving module;
the on-off state of the power device is controlled by controlling the on-off of the third switch module S3 and the fifth switch module S5.
The power device can be not only depletion gallium nitride, but also SiC JFET and other power devices needing negative pressure turn-off and zero voltage or higher level turn-on, and the driving module is a Si-MOS tube.
In the embodiment of the application, the internal inductance, the capacitor and the switch network of the driver are fully multiplexed on the circuit structure, external negative pressure power supply or an off-chip passive device is not required to be additionally introduced, the integration level is remarkably improved, the system volume is reduced, the system can be switched to a proper driving mode (CDD or RDD) according to actual working conditions, and the method is suitable for a GaN power system with soft and hard switches coexisting.
According to some embodiments of the application, a driving circuit is formed by a plurality of switching tubes, a Si-MOSFET and an off-chip inductor, different circuit architectures are obtained by changing the on-off state of the switching tubes in the driving circuit, and further different working modes are realized, so that the structure can realize gate energy recovery in a soft switching mode by providing a power device driving circuit structure which does not need to use more off-chip passive devices, has high integration level and can dynamically switch the working modes, theoretically has zero gate driving loss, and simultaneously realizes adjustable slew rate of gallium nitride in a hard switching mode, thereby meeting the actual demands of high efficiency, high reliability and multi-mode compatibility in a power device power system.
In a further embodiment of the present application, the driving circuit of the power device provided in the above embodiment is further described in a supplementary manner.
Optionally, the first switch module, the second switch module, the third switch module, the fourth switch module and the fifth switch module are respectively switch tubes.
According to some embodiments of the application, mode switching can be realized by adopting a plurality of switching tubes, the internal inductance, capacitance and switching network of the driver are fully multiplexed on the circuit structure, external negative-pressure power supply or off-chip passive devices are not required to be additionally introduced, the integration level is remarkably improved, and the system volume is reduced.
Optionally, a first end of the first switching tube is connected with the first power supply V DD, a second end of the first switching tube is connected with a first end of the second switching tube, and a second end of the second switching tube is connected with the second power supply through the first capacitor C1;
The second end of the first switching tube is connected with the first end of the energy processing module, the second end of the energy processing module is connected with the second end of the third switching tube and the first end of the fifth switching tube respectively, the first end of the third switching tube is connected with the second power supply V SS, the second end of the fifth switching tube is connected with the grid electrode of the power device, the second end of the second switching tube is connected with the second end of the fourth switching tube, and the first end of the fourth switching tube is connected with the second end of the fifth switching tube.
Some embodiments of the present application provide a D-GaN driving circuit structure capable of dynamically switching an operation mode without using more off-chip passive devices, with high integration level, which can realize gate energy recovery in a soft switching mode, theoretically zero gate driving loss, and realize adjustable slew rate of gallium nitride in a hard switching mode, so as to meet the actual requirements of high efficiency, high reliability and multi-mode compatibility in a GaN power system.
Illustratively, the driving circuit in the embodiment of the application at least comprises 5 switching tubes, one Si-MOSFET and one off-chip inductor, and different circuit architectures are realized by changing the conduction states of S3 and S5.
When the driving chip works in a traditional direct driving scheme (Conventional DIRECT DRIVER, CDD), S3 is always on, a traditional reverse step-up-down converter consisting of S1, S2 and an inductor L R can be formed to generate negative pressure required for turning off GaN, and S5 and S4 serve as drivers for turning on and off GaN.
When the driving chip works in a Resonant direct driving scheme (Resonant DIRECT DRIVER, RDD), S5 is always conducted, S1-4 and an inductor L R form a Resonant circuit, and grid resonance charge and discharge of GaN are met. It should be noted that, in this embodiment, each of the embodiments may be implemented separately, or may be implemented in any combination without conflict, without limiting the application.
Another embodiment of the present application provides a driving method of a power device, for executing the driving circuit of the power device provided in the foregoing embodiment, including:
a1, under the condition that a third switch module is conducted, determining a reverse boost-buck converter according to a first switch module, a second switch module and an energy processing module;
step A2, generating negative pressure of the power device according to the reverse step-up and step-down converter so as to enable the power chip to work in a traditional direct driving mode;
Step A3, under the condition that the fifth switch module is conducted, determining a resonant circuit according to the first switch module, the second switch module, the third switch module, the fourth switch module and the energy processing module;
and step A4, controlling the grid electrode of the power device to charge and discharge according to the resonant circuit so as to enable the power chip to work in a resonant direct driving mode.
According to the dual-mode D-GaN driving circuit provided by some embodiments of the application, the effective recovery of grid energy is realized through the resonance driving mode, the driving energy consumption is obviously reduced, the dual-mode D-GaN driving circuit is particularly suitable for a high-frequency soft switch working scene, and compared with the traditional resonance driving scheme, the number of switches and inductors is reduced.
Optionally, in the conventional direct drive mode, the method further comprises:
The first switch module S1 and the second switch module S2 are switched according to the voltage preset value to obtain a first control circuit and a second control circuit, wherein the first control circuit comprises the first switch module S1, the third switch module S3 and the energy processing module L R, and the second control circuit comprises the second switch module S2, the third switch module S3 and the energy processing module L R.
When the generated negative voltage is more negative than the preset value V1, the first control circuit and the second control circuit are not operated, and the voltage on the first capacitor is used for supplying energy for the required negative voltage. And the first control circuit starts to work to charge the energy processing module until the negative pressure on the first capacitor is higher than a preset value V1. The working time of the first control circuit is a preset fixed time. After the first control circuit finishes working, the second control circuit starts working after a short delay. In the second control circuit, the current of the energy processing module is drawn from the first capacitor, thereby generating a more negative voltage across the first capacitor. The second control circuit ends operation when the current of the energy processing module is close to zero. The first control circuit and the second control circuit are continuously switched until the negative pressure on the first capacitor is lower than the preset value V2, and the first control circuit and the second control circuit stop working until the voltage on the first capacitor is higher than the preset value V1 next time, and the operation is repeated. In order to ensure the stability of the negative pressure waveform, the preset value V2 is more negative than the preset value V1.
Optionally, the fourth switching module S4 and the fifth switching module S5 are configured to drive the power device, and adjust the charging rate of the power device by adjusting the gate voltage of the fifth switching module.
Some embodiments of the application realize dv/dt control and di/dt adjustment of the GaN drain terminal by adjusting the equivalent impedance of the gate driving path in the CDD mode.
As shown in fig. 2, when the driving chip is operated in CDD mode, S3 is always on, one end of L R is connected to ground, and S1, S2 and L constitute a conventional reverse step-up-down converter, which can generate negative pressure required for turning off depletion gallium nitride.
The buck-boost converter operates in DCM to reduce losses. VSS and VNEG are the on and off voltages of D-GaN, respectively, and S4 and S5 constitute the last stage driving circuit for turning on and off gallium nitride. The gate-source voltage of S5 is adjustable so that S5 can act as an adjustable resistor.
By changing the on-resistance of S5, the charging speed of the gallium nitride grid electrode is changed, and dv/dt control of D-GaN is adjusted.
Optionally, in the resonant direct drive mode, the method comprises:
under the condition that the first switch module, the fourth switch module and the fifth switch module are turned on, the energy processing module is charged, the fourth switch module is turned off, and the grid electrode of the power device is charged, so that the grid voltage of the power device is changed from negative pressure to 0;
the energy processing module discharges under the condition that the second switch module, the third switch module and the fifth switch module are conducted;
And when the third switch module and the fifth switch module are conducted, controlling the grid voltage of the power device to be 0.
As shown in fig. 3, S5 is always on when the driving chip operates in RDD mode. When the gallium nitride needs to be opened, firstly, S1, S4 and S5 are conducted, the inductor is precharged, current is supplied to the inductor, the grid charging speed of the gallium nitride is accelerated, and the working state is phi 1. And then turning off S4, enabling the current of the inductor to flow to the grid electrode of the gallium nitride, and gradually increasing the grid electrode voltage of the gallium nitride from negative pressure to 0, wherein the working state is phi 2. After charging the gate capacitor of gallium nitride, a lot of energy is stored in the inductor.
At this time, the switches S2, S3, S5 are turned on, so that the current of the inductor is discharged through the paths of V NEG,LR and VSS, and the energy on the inductor generates a more negative source driver supply voltage V NEG. The working state is phi 3. Finally, switches S3, S5 are turned on, maintaining the gate of gallium nitride at 0.
It should be noted that there is an additional operating state phiopt ＊ during the process of opening the gallium nitride. When V NEG is more negative than the set value, state phiopt ＊ is skipped during the gallium nitride turn-on process. However, when V NEG is more positive than the set value, state phiopt ＊ is implemented during the gallium nitride turn-on process and between the phi 2 operating state and the phi 3 operating state, more energy is charged to the inductor, so that a more negative V NEG can be generated when the inductor discharges.
Optionally, in the resonant direct drive mode, the method comprises:
charging the energy processing module under the condition that the second switch module, the third switch module and the fifth switch module are conducted;
Under the condition that the second switch module and the fifth switch module are conducted, a resonant circuit is formed according to the grid capacitance of the power device, the fifth switch module, the energy processing module and the second switch module;
in the inductive discharging process, the first switch module, the fourth switch module and the fifth switch module are conducted to generate a negative source driver power supply voltage, and energy of the energy processing module is transferred to a first power supply;
And under the condition that the fourth switch module and the fifth switch module are conducted, controlling the grid voltage of the power device to be the negative source driver power supply voltage V NEG.
Some embodiments of the application construct an internal resonant path in RDD mode to achieve gate charge-discharge recycling. By changing the charging time of the inductor, the negative voltage capable of turning off gallium nitride is maintained.
As shown in fig. 4, when the power device (gallium nitride) needs to be turned off, S2, S3 and S5 are turned on to precharge the inductor, and the operating state is Φ4, and then the switch S3 is turned off, and the energy of the gate capacitor is transferred to the inductor L R through the resonant circuit formed by the gallium nitride gate capacitor, S5, the inductors L R and S2 and the capacitor V NEG, and the operating state is Φ5.
Then, the inductor is put into an inductive discharge state, S1, S4 and S5 are conducted, and energy is returned to a power supply VDD (first power supply) while more negative V NEG is generated, and the working state is phi 6. Finally, S4, S5 is turned on, and the gate of the power device is maintained at V NEG.
Some embodiments of the present application provide a power chip, where the power chip at least includes one or more power devices, a driving circuit for driving one power device by using the power devices, and a second driving circuit for driving a plurality of power devices, where the second driving circuit includes at least seven switch modules and an energy processing module, and the power chip further includes a bootstrap circuit for supplying power to the driving circuit of the power device.
The second driving circuit is shown in fig. 9, and may be applied to driving two or more power devices, if two power devices are used, two additional switching tubes are added, where the driving circuit includes switching tubes S1, S2, S3, S4.1, S5.1, S4.2, S5.2, and an inductor L R, where the second end of S1 is connected to the first end of S5.2 through an inductor L R, the second end of S5.2 is connected to the first end of S4.2, the second end of S4.2 is connected to the second end of S4.1, the second end of S4.1 is connected to the second end of S2, the second end of S1 is connected to the first end of S2, the second end of S3 is connected to the first end of S5.1, the first end of S3 is connected to ground, the second end of S5.1 is connected to the first power device, and the second end of S5.2 is connected to the second power device.
As shown in fig. 5, the entire system can be integrated on one chip, except for off-chip inductance and controlled gallium nitride. In addition to the power stage circuit consisting of 5 switches and inductors, the system integrates a reference voltage module to generate a reference voltage, and a voltage modulation module to generate some internal voltages, reducing external voltage and signal requirements. The output voltage VNEG is divided by a resistor and then enters a comparator to generate a signal, which determines whether the state phiopt is performed in the RDD mode and determines whether the reverse step-up/step-down converter is operated to maintain the negative voltage in the CDD mode. The bootstrap circuit of S3, S5 is integrated inside the chip.
Optionally, the bootstrap circuit comprises at least a bootstrap capacitor for supplying power to the third switch module and the fifth switch module, the bootstrap capacitor comprises at least a main capacitor for supplying energy for turning on and off the third switch module and the fifth switch module, and a secondary capacitor for reducing ripple of the power supply of the third switch module.
As shown in fig. 6-8, in order to improve the utilization ratio of the bootstrap capacitor, the bootstrap circuit of this design may share the same bootstrap capacitor to supply power to the switches S3, S5 in both modes.
The bootstrap capacitance is split into two, CB1 and CB2. CB2 is a main capacitor, and provides energy for turning on and off the switches S3 and 5. CB1 is a slave capacitor, and has a main function of reducing ripple of the power supply of S3.
The power supply principle of the bootstrap circuit in different working modes is shown in fig. 7 and 8, when the driving chip works in the RDD mode, the source end potentials of S3 and S5 are the same because S5 is normally open, CB1 and CB2 can be connected in parallel, and meanwhile charging and discharging can be performed. When the gallium nitride is turned on, the gate of the gallium nitride is connected to VSS, and the voltage nodes LS and VGATE of the bootstrap circuit are VSS, so that the bootstrap capacitor can be charged at this time.
When the driver chip is operating in CDD mode, the upper plate of capacitor CB1 can be directly connected to VDD because switch S3 is normally open, connecting LS to VSS. An extra voltage zero crossing detection module is needed for charging the capacitor CB2, and the VGATE is detected to output a high level when the negative pressure is close to 0, so that charge supplementation of the capacitor CB2 is completed.
In addition, the potential of the last stage of the driver of S5 will also change, which is supplied by VPF. After an external control signal VX enters the chip and is converted into a current signal, a reference voltage is generated on a resistor RSR, and the voltage is supplied to the last stage of driving of S5 after passing through a buffer. The on-resistance of the gallium nitride is changed by changing the gate-source voltage when S5 is normally opened, so that the pull-up current is controlled when the gallium nitride is started, and the dv/dt change of the gallium nitride is further controlled.
The embodiment of the application provides a D-GaN driving circuit structure which does not need to use more off-chip passive devices, has high integration level and can dynamically switch working modes, the structure can realize grid energy recovery in a soft switching mode, theoretically has zero grid driving loss, and simultaneously realizes adjustable slew rate of gallium nitride in a hard switching mode so as to meet the actual requirements of a GaN power system on high efficiency, high reliability and multi-mode compatibility.
The specific manner in which the individual modules perform the operations of the apparatus of this embodiment has been described in detail in connection with embodiments of the method and will not be described in detail herein.
It should be noted that, in this embodiment, each of the embodiments may be implemented separately, or may be implemented in any combination without conflict, without limiting the application.
The above embodiments of the present application are only examples, and are not intended to limit the scope of the present application, and various modifications and variations will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application. It should be noted that like reference numerals and letters refer to like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
Claims (10)
1. The driving circuit of the power device is characterized by at least comprising a first switch module, a second switch module, a third switch module, a fourth switch module, a fifth switch module and an energy processing module, wherein the first switch module and the second switch module are respectively connected with the energy processing module, the energy processing module is also respectively connected with the third switch module and the fifth switch module, the second switch module is connected with the fifth switch module through the fourth switch module, the fifth switch module is connected with the power device, and the power device is also connected with the driving module;
And controlling the on-off state of the power device by controlling the on-off state of the third switch module and the fifth switch module.
2. The driving circuit of a power device according to claim 1, wherein the first, second, third, fourth, and fifth switching modules are switching tubes, respectively.
3. The driving circuit of the power device according to claim 2, wherein a first end of the first switching tube is connected to the first power source, a second end of the first switching tube is connected to a first end of the second switching tube, and a second end of the second switching tube is connected to the second power source through the first capacitor;
The second end of the first switching tube is connected with the first end of the energy processing module, the second end of the energy processing module is connected with the second end of the third switching tube and the first end of the fifth switching tube respectively, the first end of the third switching tube is connected with the second power supply, the second end of the fifth switching tube is connected with the grid electrode of the power device, the second end of the second switching tube is connected with the second end of the fourth switching tube, and the first end of the fourth switching tube is connected with the second end of the fifth switching tube.
4. A driving method of a power device, applied to the driving circuit of a power device according to any one of claims 1 to 3, the method comprising:
determining a reverse boost buck converter according to the first switch module, the second switch module and the energy processing module when the third switch module is turned on;
generating negative pressure of the power device according to the reverse step-up/step-down converter so as to enable the power chip to work in a traditional direct driving mode;
Determining a resonant circuit according to the first switch module, the second switch module, the third switch module, the fourth switch module and the energy processing module when the fifth switch module is turned on;
And controlling the grid electrode of the power device to charge and discharge according to the resonant circuit so as to enable the power chip to work in a resonant direct driving mode.
5. The driving method according to claim 4, wherein in the conventional direct drive mode, the method further comprises:
and switching the first switch module and the second switch module according to the magnitude of the voltage preset value to obtain a first control circuit and a second control circuit, wherein the first control circuit comprises a first switch module, a third switch module and the energy processing module, and the second control circuit comprises a second switch module, a third switch module and the energy processing module.
6. The driving method according to claim 5, wherein the fourth switching module and the fifth switching module are used for driving the power device, and the charging rate of the power device is adjusted by adjusting the gate voltage of the fifth switching module.
7. The driving method according to claim 5, wherein in the resonant direct drive mode, the method comprises:
Under the condition that the first switch module, the fourth switch module and the fifth switch module are conducted, the energy processing module is charged, the fourth switch module is turned off, and the grid electrode of the power device is charged, so that the grid voltage of the power device is changed from negative pressure to 0;
the energy processing module discharges under the condition that the second switch module, the third switch module and the fifth switch module are conducted;
And controlling the grid voltage of the power device to be 0 under the condition that the third switch module and the fifth switch module are conducted.
8. The driving method according to claim 5, wherein in the resonant direct drive mode, the method comprises:
charging the energy processing module when the second switch module, the third switch module and the fifth switch module are conducted;
under the condition that the second switch module and the fifth switch module are conducted, a resonant circuit is formed according to the grid capacitance of the power device, the fifth switch module, the energy processing module and the second switch module;
in the inductive discharging process, the first switch module, the fourth switch module and the fifth switch module are conducted to generate a negative source driver power supply voltage, and energy of the energy processing module is transferred to a first power supply;
and under the condition that the fourth switch module and the fifth switch module are conducted, controlling the grid voltage of the power device to be the power supply voltage of the negative source driver.
9. The power chip is characterized by at least comprising one or more power devices, wherein a driving circuit of the power device is adopted to drive one power device, and a second driving circuit is adopted to drive the power devices, and the second driving circuit at least comprises seven switch modules and an energy processing module;
the power chip further comprises a bootstrap circuit, wherein the bootstrap circuit is used for supplying power to a driving circuit of the power device.
10. The power chip of claim 9, wherein the bootstrap circuit includes at least a bootstrap capacitor for powering the third and fifth switching modules, the bootstrap capacitor includes at least a master capacitor for providing power for turning on and off the third and fifth switching modules and a slave capacitor for reducing ripple of a power supply of the third switching module.
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