CN120300001A - A metal interconnect structure and method suitable for high-density fan-out packaging - Google Patents
A metal interconnect structure and method suitable for high-density fan-out packaging Download PDFInfo
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Abstract
本发明提供一种适用于高密度扇出型封装的金属互联结构与方法，包括以下步骤：S1调整功能性多层结构上的金属焊盘和/或第一层金属导线层的高度，使其靠近功能芯片的一端面达到一致的高度；S2在经过步骤S1调整后高度一致的金属焊盘靠近功能芯片的一端面上和/或第一层金属导线层靠近功能芯片的一端面上，制作至少两层第一钝化层和至少两层金属导线层以形成金属重布线层，所述金属导线层的线宽为1～4um且线距为1～4um；S3完成金属重布线层与有机基板之间金属互联；这样有效避免了金属焊盘表面和/或第一层金属导线层表面的高低起伏，增大了金属重布线层的精细布线的范围与面积，降低了加工成本，提高封装体的载流能力和整体性能。
The present invention provides a metal interconnection structure and method suitable for high-density fan-out packaging, comprising the following steps: S1 adjusting the height of a metal pad and/or a first metal wire layer on a functional multilayer structure so that the height is consistent with that of an end surface close to a functional chip; S2 making at least two first passivation layers and at least two metal wire layers on an end surface close to the functional chip and/or an end surface close to the functional chip of a metal pad having a consistent height after adjustment in step S1, to form a metal redistribution layer, wherein the line width of the metal wire layer is 1 to 4 um and the line spacing is 1 to 4 um; S3 completing the metal interconnection between the metal redistribution layer and an organic substrate; thus, the ups and downs of the surface of the metal pad and/or the surface of the first metal wire layer are effectively avoided, the range and area of fine wiring of the metal redistribution layer are increased, the processing cost is reduced, and the current carrying capacity and overall performance of the package are improved.
Description
Technical Field
The invention relates to the technical field of packaging of semiconductor chips, in particular to a metal interconnection structure and method suitable for high-density fan-out packaging.
Background
The high-density fan-out type package has better system integration capability, can integrate and package high-I/O density chips such as logic chips, memory chips and the like, and is widely applied to the emerging technical fields such as artificial intelligence, high-performance operation, 5G base stations and the like. The packaging structure is generally composed of a functional chip, a rewiring layer and an organic substrate, wherein the metal interconnection structure between the rewiring layer and the organic substrate has an important influence on the signal transmission and the reliability of the packaging.
At present, the following technical problems exist in the metal interconnection structure between the rewiring layer and the organic substrate:
The metal pad structure and the first layer metal wire layer at the opening of the passivation layer are formed by electroplating under the limitation of the electroplating pharmaceutical process capability, the position of the metal pad cannot be consistent with the surface height of the first layer metal wire layer, and great challenges can be encountered when fine wiring (such as fine wiring with the line width less than or equal to 10um and the line distance less than or equal to 10 um) is performed due to the height fluctuation of the surface of the metal pad and/or the surface of the first layer metal wire layer. The routing paths may be blocked or changed, so that originally designed line widths and line pitches cannot be maintained, and the height fluctuation may cause problems of short circuit, open circuit or poor signal transmission in the fine routing process, so that the quality and reliability of products are seriously affected, and in view of yellow light process quality, in order to avoid the potential problems, fine routing of line widths and line pitches with smaller size is usually selected on the metal bonding pad, and the area around or far from the bonding pad is usually selected, however, more available space needs to be found on the circuit board to accommodate the fine routing, so that the range and area of the fine routing of the metal re-routing layer are limited;
When fine wiring cannot be performed directly over the metal pads, it is often necessary to bypass these areas by increasing the number of rewiring layers, thereby completing the required wiring work. This means that additional metal layers have to be added to the circuit board and connected by passivation layer vias or the like, which not only increases the complexity of the design but also increases the processing difficulty and cost. Each layer is added with consideration of complex problems such as precise alignment, insulation and stable connection with other layers, which clearly further increases manufacturing cost and process challenges.
In the current packaging technology, in order to control the surface height difference between the metal pad surface and the first metal wire layer, a common method is to reduce the aperture of the passivation layer opening. However, this approach presents a number of challenges in practical applications. The aperture of the passivation layer opening is usually required to be finely controlled in a range of less than 30um, even less than 20um, and the size of the aperture directly determines the diameter of the metal pad, however, the diameter of the C4 bump electroplated and grown behind the metal pad is usually larger, and the range is 70-90 um. This significant dimensional difference results in a critical problem in that the aperture of the passivation layer opening is much smaller than the diameter of the C4 bump, thereby significantly reducing the contact area between the metal pad and the C4 bump, severely limiting the current carrying capability of the overall package.
The foregoing background is only for the purpose of providing an understanding of the principles and concepts of the application and is not necessarily related to the prior art or is not necessarily taught by the present application and is not intended to be used for the purposes of assessing the novelty and creativity of the present application without express evidence that such is already disclosed prior to the filing date of this patent application.
Disclosure of Invention
In order to solve the technical problems of limiting the range and the area of fine wiring of a metal rewiring layer, limiting the current carrying capacity of the whole packaging body and the like, the invention provides a metal interconnection structure and a method suitable for high-density fan-out packaging, which realize metal interconnection between the metal rewiring layer and an organic substrate, effectively avoid the fluctuation of the surface of a metal bonding pad and/or the surface of a first layer of metal wire layer, enlarge the range and the area of fine wiring of the metal rewiring layer, reduce the processing cost, and further ensure that the metal bonding pad and a metal welding spot have enough contact area, thereby improving the current carrying capacity and the overall performance of the packaging body.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
the invention provides a metal interconnection method suitable for high-density fan-out type packaging, which comprises the following steps:
S1, adjusting the heights of metal pads and/or first metal wire layers on the functional multilayer structure to enable the heights of the metal pads and/or first metal wire layers close to one end face of a functional chip to reach the same height;
S2, manufacturing at least two first passivation layers and at least two metal wire layers on one end surface of the metal bonding pad close to the functional chip and/or one end surface of the first metal wire layer close to the functional chip after adjustment in the step S1 to form a metal rewiring layer, wherein the line width of the metal wire layer is 1-4 um and the line distance is 1-4 um;
and S3, completing metal interconnection between the metal rewiring layer and the organic substrate.
The invention provides a metal interconnection structure and a method suitable for high-density fan-out type packaging, which realize metal interconnection between a metal re-wiring layer and an organic substrate, effectively avoid the fluctuation of the surface of a metal bonding pad and/or the surface of a first layer of metal wire layer, increase the range and the area of fine wiring of the metal re-wiring layer, reduce the processing cost, and further ensure that the metal bonding pad and a metal welding spot have enough contact area, thereby improving the current carrying capacity and the overall performance of a packaging body.
As a preferred embodiment, the method for packaging the functional multilayer structure in step S1 includes the following steps:
s101, preparing a laser release layer on one end face of a glass slide, and sputtering an anti-reflection layer on one end face of the laser release layer to obtain the functional multilayer structure.
As a preferred technical solution, in step S1, adjusting the height of the first metal wire layer on the functional multilayer structure to make the height of the first metal wire layer close to one end surface of the functional chip reach a uniform height, including the following steps:
s102, preparing a plurality of metal pads which are arranged at equal intervals on one end face of an anti-reflection layer, and thinning the thickness of the metal pads to enable one end face of a second passivation layer prepared on one end face of the metal pads to be flat;
S103, a second passivation layer opening is formed in the position of the second passivation layer corresponding to the metal bonding pad, the caliber of the second passivation layer opening is matched with the diameter of the metal welding spot, the depth of the second passivation layer opening is reduced, and the height difference between one end face of the first metal wire layer plated at the position of the second passivation layer opening and one end face of the second passivation layer which is not opened is reduced;
s104, making the heights of the first metal wire layers close to one end face of the functional chip uniform.
As a preferred technical solution, the step S1 of adjusting the height of the metal pad on the functional multilayer structure to a uniform height near an end surface of the functional chip includes the steps of:
s102, preparing a second passivation layer on one end face of the anti-reflection layer, wherein a plurality of second passivation layer openings are formed in the second passivation layer at equal intervals, and the caliber of each second passivation layer opening is matched with the diameter of each metal welding spot;
S103, filling up the second passivation layer opening by adopting a metal bonding pad, wherein one end face of the metal bonding pad is flush with one end face of the second passivation layer which is not opened, so that the heights of the metal bonding pad close to one end face of the functional chip are consistent.
As a preferred technical solution, in step S1, the heights of the metal pads and the first metal wire layer on the functional multilayer structure are adjusted so that the heights of the metal pads and the first metal wire layer near one end surface of the functional chip reach a uniform height, and the method includes the following steps:
S102, preparing a second passivation layer on one end face of the anti-reflection layer;
s103, forming an integrated structure of the metal bonding pad and the first metal wire layer at one end face of the second passivation layer at the same time, so that the heights of the metal bonding pad close to one end face of the functional chip and the first metal wire layer close to one end face of the functional chip are consistent.
As a preferred technical solution, the metal interconnection between the metal redistribution layer and the organic substrate is completed in step S3, including the following steps:
S301, forming a first bump structure on one end surface of a metal rewiring layer;
S302, a plurality of functional chips are welded with the first bump structure through the second bump structure;
S303, filling gaps between the functional chip and the metal redistribution layer by using first underfill glue, and curing the first underfill glue;
S304, coating the functional chip by adopting a plastic package material to form a plastic package body outside the functional chip;
And S305, removing the glass slide on the other end face of the glass slide by adopting a laser bonding removal process, cleaning the laser release layer, and removing the anti-reflection layer, wherein the other end face of the metal bonding pad and/or the other end face of the second passivation layer are exposed.
As a preferred technical solution, the metal interconnection between the metal redistribution layer and the organic substrate is completed in step S3, including the following steps:
S306, preparing a first metal welding spot at the position of the other end face of the metal welding pad, and grinding and thinning the plastic package body until one end face of the functional chip is exposed;
S307, cutting the reconstructed wafer into single packages, flip-chip welding the single packages onto one end face of the organic substrate, connecting a metal rewiring layer of the single packages with the organic substrate through a first metal welding spot to realize signal transmission, filling gaps between the single packages and the organic substrate by using second underfill glue, curing the second underfill glue, and arranging a second metal welding spot at the other end face of the organic substrate corresponding to the position to obtain the high-density fan-out type packaging structure.
As a preferred technical solution, the step S3 of completing metal interconnection between the metal redistribution layer and the organic substrate includes:
S306, a second passivation layer opening is formed in the other end face of the second passivation layer corresponding to the metal bonding pad, and the second passivation layer opening is used for signal transmission;
S307, preparing a first metal welding spot at the position of the opening of the second passivation layer, wherein the caliber of the opening of the second passivation layer is matched with the diameter of the metal welding spot, and grinding and thinning the plastic package until one end face of the functional chip is exposed;
S308, cutting the reconstructed wafer into single packages, flip-chip welding the single packages onto one end face of the organic substrate, connecting a metal rewiring layer of the single packages with the organic substrate through a first metal welding spot to realize signal transmission, filling gaps between the single packages and the organic substrate by using second underfill glue, curing the second underfill glue, and arranging a second metal welding spot at the other end face of the organic substrate corresponding to the position to obtain the high-density fan-out type packaging structure.
As a preferable technical scheme, the first bump structure comprises any one of a copper nickel gold bump structure, a copper nickel tin silver bump structure and a copper nickel copper tin silver bump structure, and the second bump structure comprises a copper nickel tin silver bump structure or a copper nickel copper tin silver bump structure.
On the other hand, the invention provides a metal interconnection structure suitable for high-density fan-out type packaging, and the metal interconnection structure is obtained by packaging according to the metal interconnection method of the high-density fan-out type packaging.
The metal interconnection structure and the method suitable for the high-density fan-out type packaging have the following beneficial effects:
1) The metal interconnection between the metal rewiring layer and the organic substrate is realized, the fluctuation of the surface of the metal bonding pad and/or the surface of the first metal wire layer is effectively avoided, the range and the area of fine wiring of the metal rewiring layer are increased, the processing cost is reduced, and the sufficient contact area between the metal bonding pad and the metal welding point is ensured, so that the current carrying capacity and the overall performance of the packaging body are improved;
2) On one hand, the method effectively avoids the fluctuation of the surface of the metal bonding pad and/or the surface of the first layer of metal wire layer, realizes the precise wiring of the metal re-wiring layer on the metal bonding pad, ensures that the metal wire layer has the line width and the line distance of 1-4 um, further ensures that the metal wire layer has the line width and the line distance of 1-2 um, and is beneficial to improving the performance and the reliability of a circuit, on the other hand, the method does not need to reduce the caliber of an opening of a passivation layer so as to achieve the purpose of controlling the height difference of the surface of the metal bonding pad and/or the surface of the first layer of metal wire layer, ensures that the metal bonding pad and a metal welding spot have enough contact area, and further improves the current carrying capacity and the overall performance of a packaging body;
The method purposefully selects the metal bonding pad and/or the first metal wire layer to be consistent in height in the step S1, so that the end surface of the metal bonding pad, which is close to the functional chip, reaches the consistent height, and stress generated by the height difference in the wiring process (the stress possibly causes breakage or short circuit of metal wiring) is not caused, thereby improving the stability of fine wiring;
the method purposefully selects the metal pads and/or the first metal wire layers in the step S1, so that the heights of the metal pads and/or the first metal wire layers close to one end face of the functional chip reach the consistent height, the metal pads and/or the first metal wire layers with the high consistency are beneficial to optimizing the transmission of signals in the packaging structure, the signal transmission quality between the internal circuit of the packaging structure and external equipment or systems can be improved, and the problem of poor signal transmission is solved;
The method purposefully selects the metal bonding pads and/or the first metal wire layers with consistent height after the adjustment of the step S1 in the step S2 to be close to one end face of the functional chip, and makes at least two first passivation layers and at least two metal wire layers to form a metal re-wiring layer, thereby providing extra wiring space for packaging and allowing fine wiring structure to be realized;
The metal wire layer in the step S2 is purposefully selected to have a line width of 1-4 um and a line distance of 1-4 um, and further, the metal wire layer is provided with a line width of 1-2 um and a line distance of 1-2 um, so that the requirement of a high-density fan-out type packaging structure on fine wiring is met, and the integration level and the performance of the packaging structure are improved;
the application purposefully selects to finish metal interconnection between the metal rewiring layer and the organic substrate in the step S3, which is a key step for realizing connection between the internal circuit of the packaging structure and external equipment or a system, and the circuit inside the packaging structure can perform data transmission and signal interaction with the external equipment or the system through the metal interconnection structure, thereby ensuring normal realization of chip functions.
3) The application purposefully selects to prepare the laser release layer on one end surface of the glass slide, the main function of the laser release layer is to realize rapid and accurate cutting or release through laser irradiation in the subsequent processing process, the technology can ensure the accuracy and reliability of the packaging structure, especially in the application requiring high-precision processing;
the application purposefully selects to sputter an anti-reflection layer on one end face of the laser release layer to obtain a functional multilayer structure, and the anti-reflection layer is sputtered on the laser release layer, so that the efficiency and the precision in the laser processing process are improved, the anti-reflection layer can reduce the reflection and the scattering of laser in the processing process, and the laser energy can be ensured to be more concentrated and more effectively acted on a target area;
the material of the anti-reflection layer is purposefully selected to be a metal aluminum anti-reflection layer or a titanium copper anti-reflection layer, and the anti-reflection layer is used for blocking damage of laser to the rewiring layer in a laser de-bonding process;
The combination of the glass carrier, the laser release layer and the anti-reflective layer makes the functional multilayer structure an efficient and reliable packaging and processing method.
4) According to the application, the caliber of the second passivation layer opening is purposefully selected to be matched with the diameter of the metal welding spot, the metal welding spot is preferably selected to be the first metal welding spot and/or the second metal welding spot, and particularly the caliber of the second passivation layer opening is consistent with the diameter of the metal welding spot, so that the contact area between the metal welding spot and the metal welding spot can be obviously increased, the current transmission efficiency is improved, the current density is reduced, the contact resistance is reduced, and the current carrying capacity of the whole packaging body is improved;
5) The application purposefully selects to form a first bump structure on one end surface of the metal re-wiring layer, which is used for welding with a second bump structure on the functional chip to establish electrical connection;
the application purposefully selects the welding of the second bump structure and the first bump structure to connect a plurality of functional chips with the metal rewiring layer together to form a complete circuit structure;
The application purposefully selects the first underfill glue to fill the gap between the functional chip and the metal re-wiring layer and solidify, the first underfill glue plays roles of blocking water and oxygen and improving reliability, the step not only enhances the connection strength between the functional chip and the metal re-wiring layer, but also improves the overall electrical performance and stability;
The application purposefully adopts the plastic package material to coat the functional chip, and forms the plastic package body outside the functional chip, and the plastic package body not only protects the chip, but also provides electric isolation and heat dissipation functions, and can also be used as a new support for the whole reconstituted wafer after the glass slide is removed.
6) The first metal welding spot is purposefully prepared at the other end face of the metal welding spot, and the step is to perform reliable electrical connection with the organic substrate subsequently, so that efficient signal transmission and electrical connection can be realized, and the electrical performance of the whole packaging structure is ensured.
7) The second passivation layer opening is purposefully selected to be formed on the other end face of the second passivation layer corresponding to the metal bonding pad, and the first metal welding spot is prepared at the position of the second passivation layer opening, so that the signal transmission efficiency, the electrical connection stability, the processing precision and the packaging structure reliability are higher;
8) The plastic package body is ground and thinned until the other end face of the functional chip is exposed, the step is to further reduce the overall thickness of the package body, improve the integration level and the space utilization rate, and the thinned plastic package body can also reduce the thermal resistance, improve the heat dissipation performance and ensure the stability and the reliability of the functional chip under high-power operation;
according to the application, the reconstructed wafer is purposefully cut into single packages, and the single packages with smaller size and higher integration level can be obtained through cutting, so that the requirements of modern electronic equipment on miniaturization and high performance are met;
The application purposefully selects to flip-chip bond a single package body to one end face of the organic substrate, and the single package body is connected with the organic substrate through the first metal welding spot to realize signal transmission, and the flip-chip bonding technology can effectively reduce the package volume, improve the integration density, reduce the signal transmission delay and improve the overall performance;
The method provided by the application has the advantages that the gaps between the single package bodies and the organic substrate are purposefully filled with the second underfill glue and cured, so that the firm and reliable connection between the package bodies and the organic substrate can be ensured, the overall mechanical performance and vibration resistance are improved, the effect of blocking water and oxygen can be realized, and meanwhile, the effects of buffering stress and improving reliability can be realized;
The application purposefully selects to set the second metal welding spot at the corresponding position of the other end face of the organic substrate to obtain the high-density fan-out packaging structure, and the second metal welding spot can be used for connecting with other circuit modules or systems to realize more complex electric functions and signal transmission.
9) The first bump structure of the application purposefully selects any one of a copper nickel gold bump structure, a copper nickel tin silver bump structure and a copper nickel copper tin silver bump structure, the second bump structure of the application purposefully selects a copper nickel tin silver bump structure or a copper nickel copper tin silver bump structure, and the material selection of the first bump structure and the second bump structure plays key roles of electric connection, heat dissipation, reliability enhancement and the like in a high-density fan-out type packaging technology.
Drawings
FIG. 1 is a schematic structural diagram of step S101 in embodiments 1-3 provided by the present invention;
Fig. 2 is a schematic structural diagram of step S102 in embodiment 1 provided by the present invention;
fig. 3 is a schematic structural diagram of step S103 in embodiment 1 provided by the present invention;
Fig. 4 is a schematic structural diagram of step S102 in embodiment 2 provided by the present invention;
Fig. 5 is a schematic structural diagram of step S103 in embodiment 2 provided by the present invention;
Fig. 6 is a schematic structural diagram of step S102 in embodiment 3 provided by the present invention;
fig. 7 is a schematic structural diagram of step S103 in embodiment 3 provided by the present invention;
Fig. 8 is a schematic structural diagram of step S2 and step S301 in embodiment 1 provided by the present invention;
fig. 9 is a schematic structural diagram of step S2 and step S301 in embodiment 2 provided by the present invention;
fig. 10 is a schematic structural diagram of step S2 and step S301 in embodiment 3 provided by the present invention;
fig. 11 is a schematic structural diagram of step S302 of embodiment 1;
fig. 12 is a schematic structural diagram of step S303 of embodiment 1 provided in the present invention;
fig. 13 is a schematic structural diagram of step S304 in embodiment 1 provided by the present invention;
fig. 14 is a schematic structural diagram of step S305 of embodiment 1 provided in the present invention;
fig. 15 is a schematic structural diagram of step S306 in embodiment 1 provided by the present invention;
Fig. 16 is a schematic structural diagram of step S307 of embodiment 1 provided in the present invention;
fig. 17 is a schematic structural diagram of step S306 in embodiment 3 provided by the present invention;
fig. 18 is a schematic structural diagram of step S307 of embodiment 3 provided in the present invention;
fig. 19 is a schematic structural diagram of step S308 in embodiment 3 provided by the present invention;
Fig. 20 is a schematic structural diagram of step S307 of embodiment 2 provided in the present invention;
The semiconductor package comprises a 1-glass carrier, a 2-laser release layer, a 3-anti-reflection layer, a 4-metal bonding pad, a 5-second passivation layer, a 501-second passivation layer opening on one end face of the second passivation layer, a 502-second passivation layer opening on the other end face of the second passivation layer, a 6-metal rewiring layer, a 7-first bump structure, an 8-functional chip, an 801-functional chip end face, a 9-second bump structure, a 10-first underfill glue, an 11-plastic package, 12-first metal welding spots, a 13-organic substrate, 14-second underfill glue, 15-second metal welding spots, a 16-metal bonding pad and first metal wire layer integrated structure and 17-first passivation layer.
Detailed Description
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein.
The invention provides a metal interconnection method suitable for high-density fan-out type packaging, which comprises the following steps:
s1, adjusting the height of a metal bonding pad 4 and/or a first metal wire layer on the functional multilayer structure to enable one end surface of the metal wire layer, which is close to a functional chip 8, to reach a consistent height;
S2, at least two first passivation layers 17 and at least two metal wire layers are manufactured on one end surface of the metal bonding pad 4 close to the functional chip 8 and/or one end surface of the first metal wire layer close to the functional chip 8 after being adjusted in the step S1 to form a metal rewiring layer 6, wherein the wire width of the metal wire layer is 1-4 um and the wire distance is 1-4 um, the wire width of the metal wire layer is preferably 1um, 1.5um, 2um and 4um and the wire distance is preferably 1um, 1.5um, 2um and 4um, and the invention is limited in space and is not limited in conciseness;
S3 completes the metal interconnection between the metal redistribution layer 6 and the organic substrate 13.
The invention provides a metal interconnection structure suitable for high-density fan-out type packaging, which is obtained by packaging according to the metal interconnection method of the high-density fan-out type packaging.
The invention provides a metal interconnection structure and a method suitable for high-density fan-out type packaging, which realize metal interconnection between a metal re-wiring layer and an organic substrate, effectively avoid the fluctuation of the surface of a metal bonding pad and/or the surface of a first layer of metal wire layer, increase the range and the area of fine wiring of the metal re-wiring layer, reduce the processing cost, and further ensure that the metal bonding pad and a metal welding spot have enough contact area, thereby improving the current carrying capacity and the overall performance of a packaging body.
On one hand, the method effectively avoids the fluctuation of the surface of the metal bonding pad 4 and/or the surface of the first layer of metal wire layer, realizes the precise wiring of the metal re-wiring layer 6 on the metal bonding pad 4, ensures that the metal wire layer has a line width and a line distance of 1-4 um, further ensures that the metal wire layer has a line width and a line distance of 1-2 um, and is beneficial to improving the performance and the reliability of a circuit, on the other hand, the method does not need to reduce the caliber of an opening of a passivation layer so as to achieve the purpose of controlling the height difference of the surface of the metal bonding pad 4 and/or the surface of the first layer of metal wire layer, ensures that the metal bonding pad 4 and a metal welding spot have enough contact area, and further improves the current carrying capacity and the overall performance of a packaging body;
The method purposefully selects to adjust the heights of the metal pads 4 and/or the first metal wire layer in the step S1 to be consistent, so that the heights of the metal pads and/or the first metal wire layer close to one end face of the functional chip 8 are consistent, stress generated by a height difference in the wiring process (the stress possibly causes breakage or short circuit of metal wiring) is not caused, and the stability of fine wiring is improved;
the method purposefully selects the metal pads 4 and/or the first metal wire layers in the step S1, so that the heights of the metal pads 4 and/or the first metal wire layers close to one end face of the functional chip reach the consistent height, the metal pads 4 and/or the first metal wire layers with the consistent heights are beneficial to optimizing the transmission of signals in the packaging structure, the signal transmission quality between the internal circuit of the packaging structure and external equipment or systems can be improved, and the problem of poor signal transmission is solved;
The application purposefully selects the metal bonding pad 4 and/or the first metal wire layer with consistent height after the adjustment of the step S1 in the step S2 to be close to one end face of the functional chip, and makes at least two first passivation layers 17 and at least two metal wire layers to form a metal re-wiring layer 6, which provides additional wiring space for packaging and allows fine wiring structure to be realized;
The metal wire layer in the step S2 is purposefully selected to have a line width of 1-4 um and a line distance of 1-4 um, and further, the metal wire layer is enabled to have a line width and a line distance of 1-2 um, so that the requirement of a high-density fan-out type packaging structure on fine wiring is met, and the integration level and the performance of the packaging structure are improved;
The application purposefully selects to finish the metal interconnection between the metal rewiring layer 6 and the organic substrate 13 in the step S3, which is a key step for realizing the connection between the internal circuit of the packaging structure and the external equipment or system, and the circuit inside the packaging structure can perform data transmission and signal interaction with the external equipment or system through the metal interconnection structure, thereby ensuring the normal realization of the chip function.
Example 1
The invention provides a metal interconnection method suitable for high-density fan-out type packaging, which comprises the following steps:
The step S1 of adjusting the height of the first metal wire layer on the functional multilayer structure to make the height of the first metal wire layer close to the end face of the functional chip 8 reach a uniform height includes the following steps:
as shown in fig. 1, S101, a laser release layer 2 is prepared on one end surface of a glass carrier 1, and an antireflection layer 3 is sputtered on one end surface of the laser release layer 2 to obtain a functional multilayer structure;
As shown in fig. 2, S102, a plurality of metal pads 4 are formed on one end face of the anti-reflection layer 3 at equal intervals through metal sputtering, photolithography, electroplating and other processes, the metal pads 4 are used for metal interconnection between the subsequent metal re-wiring layer 6 and the organic substrate 13, the thickness of the metal pads 4 is thinned to 3-8 um, the thicknesses of the thinned metal pads 4 are preferably 3um, 5um and 8um, and for the sake of brevity and for simplicity, the specific point values included in the range are not exhaustive, and the thickness of the metal pads 4 is thinned so as to make one end face of the second passivation layer 5 formed on one end face of the metal pads 4 flat;
As shown in fig. 3, S103 opens a second passivation layer opening 501 at a position of the second passivation layer 5 corresponding to the metal pad 4, where the caliber of the second passivation layer opening 501 is adapted to the diameter of the metal solder joint, and the depth of the second passivation layer opening 501 is reduced so that the height difference between an end surface of the first metal wire layer plated at the position of the second passivation layer opening 501 and an end surface of the second passivation layer 5 that is not opened is reduced;
S104, enabling the heights of the first metal wire layers close to one end face of the functional chip 8 to be consistent;
As shown in fig. 8, S2, on the end surface of the first metal wire layer close to the functional chip 8, which is adjusted in step S1 and has a uniform height, at least two first passivation layers 17 and at least two metal wire layers are fabricated to form a metal redistribution layer 6, where the metal redistribution layer 6 is preferably prepared by processes such as sputtering a metal layer, photoetching a metal wire, electroplating a metal wire, photoetching a passivation layer, and the like, and the line width of the metal wire layer is 2um and the line distance is 2um;
s3, completing metal interconnection between the metal rewiring layer 6 and the organic substrate 13, and comprising the following steps of:
As shown in fig. 8, S301 forms a first bump structure 7 on one end surface of the metal redistribution layer 6, where the first bump structure 7 is formed by metal sputtering, photolithography, electroplating, and other processes, and the first bump structure 7 is preferably a cu-ni-au bump structure;
as shown in fig. 11, S302 the plurality of functional chips 8 are soldered together with the first bump structure 7 by the second bump structure 9, and the second bump structure 9 is preferably a copper-nickel-tin-silver bump structure;
As shown in fig. 12, S303 fills the gap between the functional chip 8 and the metal redistribution layer 6 with the first underfill glue 10, and performs curing of the first underfill glue 10;
as shown in fig. 13, S304 encapsulates the functional chip 8 with a molding compound to form a molding compound 11 outside the functional chip 8;
As shown in fig. 14, S305 is to remove the glass carrier 1 by a laser bonding process on the other end surface of the glass carrier 1, clean the laser release layer 2 by a plasma cleaning method, and then remove the anti-reflection layer 3 by wet etching with a liquid chemical, so that the other end surface of the metal pad 4 and the other end surface of the second passivation layer 5 are exposed, the anti-reflection layer 3 is a metal aluminum anti-reflection layer, and the metal aluminum anti-reflection layer is used for blocking the damage of the laser to the metal redistribution layer 6 in the laser bonding process;
as shown in fig. 15, S306 is to prepare a first metal solder joint 12 at the position of the other end face of the metal pad 4, and the first metal solder joint 12 is preferably sputtered with a metal layer, a photo-etched bump, an electroplated bump and other processes to form a C4 bump, and grind and thin the plastic package 11 until one end face 801 of the functional chip is exposed;
As shown in fig. 16, S307 is formed by cutting the reconstituted wafer into individual packages, flip-chip bonding the individual packages onto one end surface of the organic substrate 13, connecting the metal redistribution layer of the individual packages with the organic substrate 13 through the first metal solder joints 12 to realize signal transmission, filling the gaps between the individual packages and the organic substrate 13 with the second underfill glue 14, curing the second underfill glue 14, and disposing the second metal solder joints 15 at the corresponding positions of the other end surface of the organic substrate 13 to obtain a high-density fan-out type package structure, wherein the second metal solder joints 15 are prepared by printing solder paste or implanting balls, and the second metal solder joints 15 preferably contain a small amount of copper and silver.
The embodiment also provides a metal interconnection structure suitable for the high-density fan-out type package, which is obtained by packaging according to the metal interconnection method of the high-density fan-out type package.
The embodiment also provides a metal interconnection method and structure suitable for high-density fan-out type packaging, which realizes metal interconnection between the metal re-wiring layer and the organic substrate, effectively avoids the fluctuation of the surface of the metal pad 4 and/or the surface of the first metal wire layer, increases the range and area of fine wiring of the metal re-wiring layer 6, reduces the processing cost, and further ensures that the metal pad 4 and the metal welding spot have enough contact area, thereby improving the current carrying capacity and the overall performance of the packaging body.
Example 2
The invention provides a metal interconnection method suitable for high-density fan-out type packaging, which comprises the following steps:
the step S1 of adjusting the height of the metal bonding pad on the functional multilayer structure to make the height of the metal bonding pad close to one end face of the functional chip reach a consistent height comprises the following steps:
as shown in fig. 1, S101, a laser release layer 2 is prepared on one end surface of a glass carrier 1, and an antireflection layer 3 is sputtered on one end surface of the laser release layer 2 to obtain a functional multilayer structure;
As shown in fig. 4, S102 is to prepare a second passivation layer 5 on one end face of the anti-reflection layer 3, where the second passivation layer 5 is preferably made of a photo-lithographically Polyimide (PI) material, and a plurality of second passivation layer openings 501 are formed on the second passivation layer 5 at equal intervals, and the caliber of the second passivation layer openings 501 is adapted to the diameter of the metal welding spot;
As shown in fig. 5, S103 fills up the second passivation layer opening 501 with the metal pad 4, and one end surface of the metal pad 4 is flush with one end surface of the second passivation layer 501 that is not opened, so that the height of the metal pad 4 near one end surface of the functional chip 8 is consistent;
As shown in fig. 9, S2, on the end surface of the metal pad 4, which is adjusted in step S1 and has a uniform height and is close to the functional chip 8, at least two first passivation layers 17 and at least two metal wire layers are fabricated to form a metal rewiring layer 6, wherein the line width of the metal wire layer 6 is 1.5um and the line distance is 1.5um;
In step S3, metal interconnection between the metal redistribution layer 6 and the organic substrate 13 is completed, including the following steps:
As shown in fig. 9, S301 forms a first bump structure 7 on one end surface of the metal redistribution layer 6, where the first bump structure 7 is formed by metal sputtering, photolithography, electroplating, and other processes, and the first bump structure 7 is preferably a copper-nickel-tin-silver bump structure;
s302, a plurality of functional chips 8 are welded with a first bump structure 7 through a second bump structure 9, wherein the second bump structure 9 is preferably a copper nickel copper tin silver bump structure;
s303, filling gaps between the functional chips 8 and the metal redistribution layer 6 by using first underfill glue 10, and curing the first underfill glue 10;
s304, coating the functional chip 8 by adopting a plastic package material to form a plastic package body 11 outside the functional chip 8;
S305, removing the glass slide 1 on the other end face of the glass slide 1 by adopting a laser bonding disassembling process, cleaning the laser release layer 2 by a liquid medicine wet cleaning method, and then removing the anti-reflection layer 3 by using a liquid medicine wet etching method, wherein the other end face of the metal bonding pad 4 and the other end face of the second passivation layer 5 are exposed, the anti-reflection layer 3 is a titanium copper reflection layer, and the metal aluminum anti-reflection layer is used for blocking the damage of laser to the metal rewiring layer 6 in the laser bonding disassembling process;
s306, preparing a first metal welding spot 12 at the position of the other end face of the metal bonding pad 4, wherein the first metal welding spot 12 preferably forms a C4 bump by sputtering a metal layer, photoetching a bump, electroplating a bump and other processes, and grinding and thinning the plastic package 11 until one end face 801 of the functional chip is exposed;
As shown in fig. 20, S307 is formed by cutting the reconstituted wafer into individual packages, flip-chip bonding the individual packages onto one end surface of the organic substrate 13, connecting the metal redistribution layer of the individual packages with the organic substrate 13 through the first metal solder joints 12 to realize signal transmission, filling the gaps between the individual packages and the organic substrate 13 with the second underfill glue 14, and curing the second underfill glue 14, and disposing the second metal solder joints 15 at the corresponding positions of the other end surface of the organic substrate 13, thereby obtaining the high-density fan-out type package structure, wherein the second metal solder joints 15 are prepared by printing solder paste, and the second metal solder joints 15 preferably contain a small amount of copper and silver.
The embodiment also provides a metal interconnection structure suitable for the high-density fan-out type package, which is obtained by packaging according to the metal interconnection method of the high-density fan-out type package.
The embodiment also provides a metal interconnection method and structure suitable for high-density fan-out type packaging, which realizes metal interconnection between the metal redistribution layer 6 and the organic substrate 13, effectively avoids the fluctuation of the surface of the metal bonding pad 4 and/or the surface of the first metal wire layer, increases the range and area of fine wiring of the metal redistribution layer 6, reduces the processing cost, and further ensures that the metal bonding pad 4 and the metal welding spot have enough contact area, thereby improving the current carrying capacity and the overall performance of the packaging body.
Example 3
The invention provides a metal interconnection method suitable for high-density fan-out type packaging, which comprises the following steps:
in step S1, the heights of the metal pads and the first metal wire layer on the functional multilayer structure are adjusted to be consistent with the heights of the end faces of the functional chips, including the following steps:
as shown in fig. 1, S101, a laser release layer 2 is prepared on one end surface of a glass carrier 1, and an antireflection layer 3 is sputtered on one end surface of the laser release layer 2 to obtain a functional multilayer structure;
As shown in fig. 6, S102 prepares a second passivation layer 5 on one end surface of the anti-reflection layer 3;
As shown in fig. 7, S103 forms an integral structure of the metal pad 4 and the first metal wire layer at one end face of the second passivation layer 5, and the height of the metal pad 4 near one end face of the functional chip 8 is consistent with the height of the first metal wire layer near one end face of the functional chip 8 because no electroplating pit exists;
As shown in fig. 10, S2, after the adjustment in step S1, at least two first passivation layers 17 and at least two metal wire layers are fabricated on an end surface of the metal pad 4 close to the functional chip 8 and an end surface of the first metal wire layer close to the functional chip 8, so as to form a metal redistribution layer 6, where the line width of the metal wire layer 6 is 1um and the line distance is 1um;
In step S3, metal interconnection between the metal redistribution layer 6 and the organic substrate 13 is completed, including the following steps:
As shown in fig. 10, S301 forms a first bump structure 7 on one end surface of the metal redistribution layer 6, where the first bump structure 7 is preferably a copper nickel copper tin silver bump structure;
S302, a plurality of functional chips 8 are welded with a first bump structure 7 through a second bump structure 9, wherein the second bump structure 9 is preferably a copper-nickel-tin-silver bump structure;
s303, filling gaps between the functional chips 8 and the metal redistribution layer 6 by using first underfill glue 10, and curing the first underfill glue 10;
s304, coating the functional chip 8 by adopting a plastic package material to form a plastic package body 11 outside the functional chip 8;
S305, removing the glass slide 1 on the other end face of the glass slide 1 by adopting a laser bonding disassembling process, cleaning the laser release layer 2 by a liquid medicine wet cleaning method, and then removing the anti-reflection layer 3 by using a liquid medicine wet etching method, wherein the other end face of the second passivation layer 5 is exposed, the anti-reflection layer 3 is a metal aluminum anti-reflection layer, and the metal aluminum anti-reflection layer is used for blocking damage of laser to the metal rewiring layer 6 in the laser bonding disassembling process;
As shown in fig. 17, S306 laser-punches a second passivation layer opening 502 on the other end face of the second passivation layer 5 corresponding to the metal pad 4, where the second passivation layer opening 502 is used for signal transmission;
as shown in fig. 18, S307, a first metal solder joint 12 is prepared at the position of a second passivation layer opening 502, the first metal solder joint 12 is preferably formed by using an electroplating process, the caliber of the second passivation layer opening 502 is adapted to the diameter of the first metal solder joint 12, and the plastic package 11 is ground and thinned until one end face 801 of the functional chip is exposed;
As shown in fig. 19, S308 cuts the reconstituted wafer into individual packages, flip-chip bonds the individual packages to one end surface of the organic substrate 13, the metal redistribution layer of the individual packages is connected with the organic substrate 13 through the first metal solder joints 12 to realize signal transmission, the gaps between the individual packages and the organic substrate 13 are filled with the second underfill glue 14, the second underfill glue 14 is cured, and the second metal solder joints 15 are disposed at the other end surface of the organic substrate 13 corresponding to the other end surface, so as to obtain the high-density fan-out type package structure.
The embodiment also provides a metal interconnection structure suitable for the high-density fan-out type package, which is obtained by packaging according to the metal interconnection method of the high-density fan-out type package.
The embodiment also provides a metal interconnection method and structure suitable for high-density fan-out type packaging, which realizes metal interconnection between the metal redistribution layer 6 and the organic substrate 13, effectively avoids the fluctuation of the surface of the metal bonding pad 4 and/or the surface of the first metal wire layer, increases the range and area of fine wiring of the metal redistribution layer 6, reduces the processing cost, and further ensures that the metal bonding pad 4 and the metal welding spot have enough contact area, thereby improving the current carrying capacity and the overall performance of the packaging body.
It will be understood that the application has been described in terms of several embodiments, and that various changes and equivalents may be made to these features and embodiments by those skilled in the art without departing from the spirit and scope of the application. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the application without departing from the essential scope thereof. Therefore, it is intended that the application not be limited to the particular embodiments disclosed, but that the application will include all modifications and equivalents falling within the scope of the appended claims. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the application without departing from the essential scope thereof. Therefore, it is intended that the application not be limited to the particular embodiment disclosed, but that the application will include all embodiments falling within the scope of the appended claims.
Claims (10)
1. The metal interconnection method suitable for the high-density fan-out type package is characterized by comprising the following steps of:
S1, adjusting the heights of metal pads and/or first metal wire layers on the functional multilayer structure to enable the heights of the metal pads and/or first metal wire layers close to one end face of a functional chip to reach the same height;
S2, manufacturing at least two first passivation layers and at least two metal wire layers on one end surface of the metal bonding pad close to the functional chip and/or one end surface of the first metal wire layer close to the functional chip after adjustment in the step S1 to form a metal rewiring layer, wherein the line width of the metal wire layer is 1-4 um and the line distance is 1-4 um;
and S3, completing metal interconnection between the metal rewiring layer and the organic substrate.
2. The metal interconnection method for high-density fan-out package according to claim 1, wherein the packaging method of the functional multilayer structure in step S1 comprises the steps of:
s101, preparing a laser release layer on one end face of a glass slide, and sputtering an anti-reflection layer on one end face of the laser release layer to obtain the functional multilayer structure.
3. The method of claim 2, wherein the step S1 of adjusting the height of the first metal wire layer on the functional multilayer structure to a uniform height near an end surface of the functional chip comprises the steps of:
s102, preparing a plurality of metal pads which are arranged at equal intervals on one end face of an anti-reflection layer, and thinning the thickness of the metal pads to enable one end face of a second passivation layer prepared on one end face of the metal pads to be flat;
S103, a second passivation layer opening is formed in the position of the second passivation layer corresponding to the metal bonding pad, the caliber of the second passivation layer opening is matched with the diameter of the metal welding spot, the depth of the second passivation layer opening is reduced, and the height difference between one end face of the first metal wire layer plated at the position of the second passivation layer opening and one end face of the second passivation layer which is not opened is reduced;
s104, making the heights of the first metal wire layers close to one end face of the functional chip uniform.
4. The metal interconnection method for high-density fan-out package according to claim 2, wherein the step S1 of adjusting the height of the metal pads on the functional multilayer structure to a uniform height near an end face of the functional chip comprises the steps of:
s102, preparing a second passivation layer on one end face of the anti-reflection layer, wherein a plurality of second passivation layer openings are formed in the second passivation layer at equal intervals, and the caliber of each second passivation layer opening is matched with the diameter of each metal welding spot;
S103, filling up the second passivation layer opening by adopting a metal bonding pad, wherein one end face of the metal bonding pad is flush with one end face of the second passivation layer which is not opened, so that the heights of the metal bonding pad close to one end face of the functional chip are consistent.
5. The method of claim 2, wherein the step S1 of adjusting the heights of the metal pads and the first metal wire layer on the functional multilayer structure to a uniform height near an end surface of the functional chip comprises the steps of:
S102, preparing a second passivation layer on one end face of the anti-reflection layer;
s103, forming an integrated structure of the metal bonding pad and the first metal wire layer at one end face of the second passivation layer at the same time, so that the heights of the metal bonding pad close to one end face of the functional chip and the first metal wire layer close to one end face of the functional chip are consistent.
6. The metal interconnection method for high-density fan-out package according to claim 1, wherein the metal interconnection between the metal redistribution layer and the organic substrate is completed in step S3, comprising the steps of:
S301, forming a first bump structure on one end surface of a metal rewiring layer;
S302, a plurality of functional chips are welded with the first bump structure through the second bump structure;
S303, filling gaps between the functional chip and the metal redistribution layer by using first underfill glue, and curing the first underfill glue;
S304, coating the functional chip by adopting a plastic package material to form a plastic package body outside the functional chip;
And S305, removing the glass slide on the other end face of the glass slide by adopting a laser bonding removal process, cleaning the laser release layer, and removing the anti-reflection layer, wherein the other end face of the metal bonding pad and/or the other end face of the second passivation layer are exposed.
7. The metal interconnection method for high-density fan-out package according to claim 6, wherein the metal interconnection between the metal redistribution layer and the organic substrate is completed in step S3, comprising the steps of:
S306, preparing a first metal welding spot at the position of the other end face of the metal welding pad, and grinding and thinning the plastic package body until one end face of the functional chip is exposed;
S307, cutting the reconstructed wafer into single packages, flip-chip welding the single packages onto one end face of the organic substrate, connecting a metal rewiring layer of the single packages with the organic substrate through a first metal welding spot to realize signal transmission, filling gaps between the single packages and the organic substrate by using second underfill glue, curing the second underfill glue, and arranging a second metal welding spot at the other end face of the organic substrate corresponding to the position to obtain the high-density fan-out type packaging structure.
8. The method of claim 6, wherein the step S3 of completing metal interconnection between the metal redistribution layer and the organic substrate comprises:
S306, a second passivation layer opening is formed in the other end face of the second passivation layer corresponding to the metal bonding pad, and the second passivation layer opening is used for signal transmission;
S307, preparing a first metal welding spot at the position of the opening of the second passivation layer, wherein the caliber of the opening of the second passivation layer is matched with the diameter of the metal welding spot, and grinding and thinning the plastic package until one end face of the functional chip is exposed;
S308, cutting the reconstructed wafer into single packages, flip-chip welding the single packages onto one end face of the organic substrate, connecting a metal rewiring layer of the single packages with the organic substrate through a first metal welding spot to realize signal transmission, filling gaps between the single packages and the organic substrate by using second underfill glue, curing the second underfill glue, and arranging a second metal welding spot at the other end face of the organic substrate corresponding to the position to obtain the high-density fan-out type packaging structure.
9. The metal interconnection method of claim 6, wherein the first bump structure comprises any one of a copper nickel gold bump structure, a copper nickel tin silver bump structure, and a copper nickel copper tin silver bump structure, and the second bump structure comprises a copper nickel tin silver bump structure or a copper nickel copper tin silver bump structure.
10. A metal interconnection structure suitable for high-density fan-out package, wherein the metal interconnection structure is obtained by packaging the high-density fan-out package according to any one of claims 1 to 9.
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