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CN120166832B - Nitride full-color integrated miniature light-emitting diode display chip and preparation method thereof - Google Patents

Nitride full-color integrated miniature light-emitting diode display chip and preparation method thereof

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Publication number
CN120166832B
CN120166832B CN202510498717.1A CN202510498717A CN120166832B CN 120166832 B CN120166832 B CN 120166832B CN 202510498717 A CN202510498717 A CN 202510498717A CN 120166832 B CN120166832 B CN 120166832B
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layer
emitting diode
micro light
gan
ingan
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CN120166832A (en
Inventor
王新强
陈兆营
刘放
王岩
马超凡
袁泽兴
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Peking University
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Peking University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/011—Manufacture or treatment of integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/012—Manufacture or treatment of active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/03—Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

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Abstract

A nitride full-color integrated miniature LED display chip is prepared as forming columnar or trapezoidal table surface on silicon substrate, forming AlN buffer layer, alGaN stress modulation layer, n-type GaN layer, inGaN/GaN composite quantum well layer and p-type conducting layer on silicon substrate table surface, forming miniature LED table surface by stress release of side wall of table surface and stress modulation of AlGaN layer, forming gradually reduced tensile stress distribution from table surface center to outer ring in n-type GaN layer to regulate indium component distribution in InGaN/GaN composite quantum well layer and forming miniature LED table surface covering red, green and blue three primary color wave bands. The chip structure disclosed by the invention integrates the red, green and blue three-primary-color sub-pixels, and reduces the difficulty of the mass transfer process of the full-color micro light-emitting diode display chip. The invention can complete the preparation of the red, green and blue three-primary-color sub-pixels by only one time of epitaxial process, and simplifies the process flow.

Description

Nitride full-color integrated miniature light-emitting diode display chip and preparation method thereof
Technical Field
The invention relates to the technical field of full-color micro light-emitting diode display, in particular to a nitride full-color integrated micro light-emitting diode display chip and a preparation method thereof.
Background
The micro light emitting diode display technology has the advantages of low energy consumption, long service life, good color rendering property and the like, and has wide application prospect in the fields of large-screen displays, consumer electronics, vehicle-mounted displays, virtual reality/augmented reality, wearable displays and the like. How to realize full-color display is one of the challenges faced by micro light emitting diode display technology. Currently, a large-scale transfer method is generally used to transfer red, green and blue three-primary-color micro light emitting diode chips onto the same substrate to realize full-color display.
In general, full-color micro light emitting diode display requires millions of red, green and blue three primary color pixels, and it is difficult to accurately transfer and integrate so many micro light emitting diode chips, so the yield of the mass transfer process is difficult to improve, which limits the development of full-color micro light emitting diode display technology.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a nitride full-color integrated miniature light-emitting diode display chip and a preparation method thereof, wherein three primary colors of red, green and blue sub-pixels are integrated in a chip structure, and the technical difficulty of mass transfer of the full-color display chip is greatly reduced.
In order to achieve the above object, the present invention provides the following solutions:
a nitride full-color integrated miniature LED display chip comprises a transparent substrate, a transparent electrode bonding layer, and a mesa array composed of single or several miniature LED mesas;
The micro light-emitting diode table top or the table top array is connected with the transparent substrate through the transparent electrode bonding layer.
Preferably, the micro light emitting diode table is in a column shape or a trapezoid shape, the width of the micro light emitting diode table is 100nm to 100 mu m, and the table pitch of the micro light emitting diode table is 100nm to 100 mu m.
Preferably, the structure of the micro light emitting diode mesa comprises an n-type transparent electrode layer, an n-type GaN layer, one or a plurality of periods of InGaN/GaN composite multi-quantum well layers, a p-type conductive layer and a p-type electrode layer in sequence from the transparent substrate and the transparent electrode bonding layer.
Preferably, the n-type GaN layer has a tensile stress distribution trend gradually decreasing from the center of the mesa to the outer ring.
Preferably, the InGaN/GaN composite multi-quantum well layer in each period comprises a plurality of InGaN/GaN quantum wells with high indium content and a plurality of InGaN/GaN quantum wells with low indium content, the central area of the micro light emitting diode table top is dominated by the InGaN/GaN quantum wells with high indium content, and the outer circle area of the micro light emitting diode table top is dominated by the InGaN/GaN quantum wells with low indium content.
Preferably, the indium component of the InGaN well layer in the InGaN/GaN composite multi-quantum well layer shows a gradually decreasing distribution trend from the central area of the micro light-emitting diode table top to the outer ring area, the light-emitting wavelength of the InGaN/GaN quantum well with high indium content gradually blue-shifts from 630nm to 550nm from the central area of the micro light-emitting diode table top to the outer ring area, and the light-emitting wavelength of the InGaN/GaN quantum well with low indium content gradually blue-shifts from 550nm to 450nm from the central area of the micro light-emitting diode table top to the outer ring area.
Preferably, the light emitting wavelength range of the micro light emitting diode table top covers red, green and blue three primary color wave bands, the light emitting areas corresponding to the red, green and blue three primary color wave bands in the micro light emitting diode table top are distributed in a ring shape, the ring-shaped area with the light emitting central wavelength range of 610 to 630nm in the micro light emitting diode table top is a red light sub-pixel area, the ring-shaped area with the light emitting central wavelength range of 510 to 530nm in the micro light emitting diode table top is a green light sub-pixel area, and the ring-shaped area with the light emitting central wavelength range of 450 to 470nm in the micro light emitting diode table top is a blue sub-pixel area.
Preferably, the p-type conductive layer comprises a p-type AlGaN electron blocking layer and a p-type GaN layer;
The p-type conducting layer positioned among the red sub-pixel region, the green sub-pixel region and the blue sub-pixel region is converted into a high-resistance layer through ion implantation, and the p-type conducting layer positioned on the red sub-pixel region, the green sub-pixel region and the blue sub-pixel region is not subjected to ion implantation treatment.
Preferably, the p-type electrode layer is annularly distributed;
The p-type electrode layer is positioned on the surface of the p-type conductive layer which is not subjected to ion implantation treatment.
Preferably, a method for preparing a nitride full-color integrated micro light emitting diode display chip comprises the following steps:
S1, providing an original silicon substrate with the surface of (111) crystal face;
S2, etching the surface of the original silicon substrate in the step S1 into a columnar or stepped silicon substrate mesa array by using photoetching and etching processes, wherein the height range of a mesa in the silicon substrate mesa array is 10-100 mu m, the width range of the silicon substrate mesa array is 10-100 mu m, and the interval range of the silicon substrate mesa array is 10-100 mu m;
S3, sequentially extending an AlN buffer layer, an AlGaN stress modulation layer and the n-type GaN layer on the silicon substrate table top array prepared in the step S2 by using metal organic chemical vapor deposition equipment to obtain an n-type GaN table top array, and adjusting structural parameters of the AlGaN stress modulation layer according to stress release action of the side wall of the table top to enable the n-type GaN table top prepared in the step S3 to be in a tensile stress state with high center and low outer ring distribution trend, wherein the structural composition of the AlGaN stress modulation layer comprises one or more of an uniform component AlGaN structure, a gradual component AlGaN structure, an AlN/AlGaN superlattice structure, an AlGaN/GaN superlattice structure and an AlN/GaN superlattice structure;
S4, one or a plurality of periods of the InGaN/GaN composite multi-quantum well layers are extended on the n-type GaN mesa array prepared in the step S3, wherein each period of the InGaN/GaN composite multi-quantum well layers comprises a plurality of high-indium-content InGaN/GaN quantum wells and a plurality of low-indium-content InGaN/GaN quantum wells;
S5, the p-type conducting layer is epitaxially grown on the InGaN/GaN composite multi-quantum well layer in the step S4 to obtain a nitride micro light-emitting diode mesa array, wherein the p-type conducting layer comprises the p-type AlGaN electron blocking layer and the p-type GaN layer;
S6, according to the principle that tensile stress promotes indium atom lattice incorporation, the tensile stress distribution trend of the n-type GaN mesa in the step S3 is regulated and controlled by optimizing the morphology parameters of the silicon substrate mesa in the step S2 and the structural parameters of the AlGaN stress modulation layer in the step S3, so that the indium component of the InGaN well layer of the InGaN/GaN composite multi-quantum well layer prepared in the step S4 is gradually reduced from the central area of the mesa to the outer ring area, and the epitaxial growth parameters of the InGaN/GaN composite multi-quantum well layer in the step S4 are optimized, so that the light-emitting wavelength of the high-indium-content InGaN/GaN quantum well is gradually blue-shifted from 630nm to 550nm, and the light-emitting wavelength of the low-indium-content InGaN/GaN quantum well is gradually blue-shifted from 550nm to 450nm;
S7, determining the red sub-pixel region, the green sub-pixel region and the blue sub-pixel region, wherein the light-emitting regions corresponding to the red, green and blue primary color wave bands in the micro light-emitting diode table top are annularly distributed, the annular region with the light-emitting center wavelength range of 610 to 630nm in the micro light-emitting diode table top is the red sub-pixel region, the annular region with the light-emitting center wavelength range of 510 to 530nm in the micro light-emitting diode table top is the green sub-pixel region, and the annular region with the light-emitting center wavelength range of 450 to 470nm in the micro light-emitting diode table top is the blue sub-pixel region;
S8, depositing annular p-type electrode layers on the red light sub-pixel region, the green light sub-pixel region and the blue light sub-pixel region of the micro light emitting diode mesa prepared in the steps S1-S6 by using photoetching, metal evaporation and stripping processes;
S9, performing an ion implantation process by taking the p-type electrode layer prepared in the step S8 as a mask, and converting a mask-free coverage area among the red sub-pixel area, the green sub-pixel area and the blue sub-pixel area into the high-resistance layer;
s10, bonding the micro light-emitting diode mesa array prepared in the step S9 on a temporary substrate;
S11, removing the original silicon substrate by using alkaline corrosive liquid, and fixing the micro light-emitting diode mesa array on the temporary substrate;
S12, removing the AlN buffer layer and the AlGaN stress modulation layer in the micro light-emitting diode table top in the step S11 by using photoetching and etching processes;
s13, depositing the n-type transparent electrode layer and the transparent electrode bonding layer on the n-type GaN layer exposed in the step S12 by using photoetching, metal evaporation and stripping processes;
S14, bonding the micro light-emitting diode mesa array deposited with the n-type transparent electrode layer and the transparent electrode bonding layer on the transparent substrate;
S15, removing the temporary substrate in the step S10;
S16, cutting the micro light-emitting diode table top arrays on the transparent substrate prepared in the steps S1-S15 into chips, wherein each chip comprises a single or a plurality of silicon substrate table top arrays formed by the micro light-emitting diode table tops.
The invention discloses the following technical effects:
The invention provides a nitride full-color integrated micro light-emitting diode display chip and a preparation method thereof, wherein red, green and blue three-primary-color sub-pixels are integrated on the same micro light-emitting diode table top, so that the problem of difficulty in mass transfer of the full-color micro light-emitting diode display chip is solved, full-color micro light-emitting diode display with high pixel density is realized, full-color mixing effect is improved, the problem of poor injection efficiency and photoelectric performance of a conventional light-emitting chip is solved through the micro light-emitting diode table top with a vertical structure, stronger luminous intensity and photoelectric performance are realized, the problem of lower chip yield caused by multiple epitaxy of the conventional chip is solved, and the preparation of a red, green and blue three-primary-color InGaN/GaN composite multi-quantum well based on one-time epitaxy process is realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a nitride full-color micro light emitting diode display chip according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a nitride full-color micro light emitting diode display chip according to an embodiment of the present invention;
FIG. 3 is a schematic top view of a nitride full-color micro light emitting diode display chip according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a silicon substrate surface etched into a mesa array according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of an epitaxial nitride micro LED structure on a silicon substrate mesa array according to an embodiment of the present invention;
FIG. 6 is a schematic top view of an epitaxial nitride micro LED structure on a silicon substrate mesa array according to an embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view of a micro LED mesa after depositing a p-type electrode layer on red, green, and blue subpixel areas;
FIG. 8 is a schematic top view of a micro light emitting diode mesa according to an embodiment of the present invention after depositing p-type electrode layers on red, green, and blue sub-pixel regions;
FIG. 9 is a schematic cross-sectional view of a mesa array of micro light-emitting diodes after isolation of red, green, and blue sub-pixel devices under a p-type electrode layer mask provided in an embodiment of the present invention;
FIG. 10 is a schematic cross-sectional view of a micro LED mesa array bonded to a temporary substrate according to an embodiment of the present invention;
FIG. 11 is a schematic cross-sectional view of a micro LED mesa array after etching away a silicon substrate according to an embodiment of the present invention;
FIG. 12 is a schematic cross-sectional view of a micro light emitting diode mesa array after etching to remove an AlN buffer layer and an AlGaN stress modulation layer according to an embodiment of the present invention;
FIG. 13 is a schematic cross-sectional view of a micro LED mesa array after deposition of an n-type transparent electrode layer and a transparent electrode bonding layer according to an embodiment of the present invention;
FIG. 14 is a schematic cross-sectional view of a micro LED mesa array bonded to a transparent substrate according to an embodiment of the present invention;
Fig. 15 is a schematic cross-sectional view of a micro led mesa array after removing a temporary substrate according to an embodiment of the present invention.
Reference numerals illustrate:
the semiconductor device comprises a 101-original silicon substrate, a 102-silicon substrate table top, a 201-AlN buffer layer, a 202-AlGaN stress modulation layer, a 203-n type GaN layer, a 204-InGaN/GaN composite multi-quantum well layer, a 205-p type conductive layer, a 301-red light sub-pixel region, a 302-green light sub-pixel region, a 303-blue light sub-pixel region, a 401-p type electrode layer, a 601-high resistance region, a 701-temporary substrate, a 801-temporary bonding layer, a 1001-n type transparent electrode layer, a 1002-transparent electrode bonding layer and a 1101-transparent substrate.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide a nitride full-color integrated miniature light-emitting diode display chip and a preparation method thereof, wherein red, green and blue three-primary-color sub-pixels are integrated in a chip structure, so that the technical difficulty of mass transfer of the full-color display chip is greatly reduced.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
As shown in fig. 1 and fig. 2, the structure of the nitride full-color integrated micro light emitting diode display chip in the embodiment of the invention includes a transparent substrate 1101, a transparent electrode bonding layer 1002, and a mesa array formed by 4 columnar micro light emitting diode mesas, where the micro light emitting diode mesa array is connected with the transparent substrate through the transparent electrode bonding layer.
As shown in fig. 2, the mesa width of the micro led mesa is 50 μm and the mesa pitch is 80 μm.
As shown in fig. 2, the micro light emitting diode mesa structure comprises an n-type transparent electrode layer 1001, an n-type GaN layer 203, a 3-period InGaN/GaN composite multiple quantum well layer 204, a p-type conductive layer 205 and a p-type electrode layer 401 in this order from above the transparent substrate and the transparent electrode bonding layer.
Specifically, tensile stress in an n-type GaN layer in a micro light emitting diode mesa structure is in a distribution trend of high mesa center and low outer ring.
Further, the InGaN/GaN composite multiple quantum well layer of each period in the micro light emitting diode mesa structure comprises 1 high indium content InGaN/GaN quantum well and 2 low indium content InGaN/GaN quantum wells. In the central area of the miniature LED table top, the light is mainly emitted by the InGaN/GaN quantum well with high indium content, and in the outer area of the miniature LED table top, the light is mainly emitted by the InGaN/GaN quantum well with low indium content.
Specifically, from the central region to the outer ring region of the mesa of the micro light emitting diode, the indium composition of the InGaN well layer in the InGaN/GaN composite multiple quantum well layer shows a gradually decreasing distribution trend, wherein the indium composition of the InGaN well layer in the InGaN/GaN quantum well with high indium content gradually decreases from 40% to 31%, and the indium composition of the InGaN well layer in the InGaN/GaN quantum well with low indium content gradually decreases from 31% to 17%. Accordingly, the light emission wavelength of the high indium content InGaN/GaN quantum well is gradually blue shifted from 630nm to 550nm, and the light emission wavelength of the low indium content InGaN/GaN quantum well is gradually blue shifted from 550nm to 450nm.
As shown in fig. 3, on the micro led mesa, an annular region with a luminescence center wavelength ranging from 610 nm to 630nm is defined as a red sub-pixel region 301, an annular region with a luminescence center wavelength ranging from 510 nm to 530nm is defined as a green sub-pixel region 302, and an annular region with a luminescence center wavelength ranging from 450 nm to 470nm is defined as a blue sub-pixel region 303.
Further, the p-type conductive layer in the mesa structure of the micro light emitting diode comprises a p-type AlGaN electron blocking layer and a p-type GaN layer, as shown in fig. 2 and 4, the p-type conductive layer between the red, green and blue three-primary-color sub-pixel regions is converted into a high-resistance layer 601 through ion implantation, so that device isolation between the sub-pixels is realized, and the p-type conductive layer above the red, green and blue three-primary-color sub-pixel regions is not subjected to ion implantation treatment.
Specifically, the p-type electrode layers in the mesa structure of the micro light emitting diode are distributed in a ring shape, and the surfaces of the p-type conductive layers which are not subjected to ion implantation treatment are respectively positioned above the red, green and blue three-primary-color sub-pixels.
As shown in fig. 4 to 15, the method for manufacturing the nitride full-color integrated micro light emitting diode display chip according to the present invention includes the following steps:
S1, providing an original silicon substrate 101 with the surface being a (111) crystal face, wherein the thickness is 1.5mm, and the diameter is 200mm.
S2, as shown in FIG. 4, etching the surface of the original silicon substrate 101 in the step 1 into a columnar or stepped mesa 102 array by using a photoetching and etching process. The mesa height was 20 μm, the mesa width was 50 μm, and the mesa pitch was 80 μm.
S3, as shown in FIG. 5, using a metal organic chemical vapor deposition device, sequentially extending a 300 nm-thick AlN buffer layer 201, a 300 nm-thick Al 0.5Ga0.5 N stress modulation layer 202 and a2 μm-thick N-type GaN layer 203 on the silicon substrate mesa array prepared in the step S2 to form an N-type GaN mesa array. Due to the stress release effect of the side wall of the mesa, the tensile stress distribution in the n-type GaN mesa has the trend of high center and low outer ring.
And S4, continuing to extend an InGaN/GaN composite multi-quantum well layer 204 with 3 periods on the n-type GaN mesa array prepared in the step S3, wherein each period of InGaN/GaN composite multi-quantum well layer comprises 1 InGaN/GaN quantum well with high indium content and 2 InGaN/GaN quantum wells with low indium content, the indium atom lattice incorporation efficiency of the InGaN/GaN composite multi-quantum well layer gradually decreases from the center to the outer ring due to the stress distribution trend of the n-type GaN mesa formed in the step S3, the indium component of the InGaN well layer gradually decreases from the center area to the outer ring area of the mesa, the light emitting wavelength of the InGaN/GaN composite multi-quantum well gradually moves blue from the center area to the outer ring area of the mesa, the indium atom lattice incorporation efficiency is high, the epitaxial quality of the InGaN/GaN quantum well with high indium content is higher, the InGaN quantum well with high indium content emits light predominantly, and the InGaN quantum well with low indium content emits light predominantly at the center area of the outer ring area of the mesa.
And S5, continuing to extend the p-type conductive layer 205 on the basis of the step S4, wherein the p-type conductive layer comprises a p-type AlGaN electron blocking layer and a p-type GaN layer, and forming the micro light emitting diode mesa array.
And S6, optimizing the height and width of the silicon substrate table top in the step S2, the aluminum composition and thickness of the AlGaN stress modulation layer in the step S3 and the indium composition and thickness of the InGaN well layer of the InGaN/GaN quantum well with high indium content and low indium content in the step S4, so that the light emitting wavelength of the InGaN/GaN quantum well with high indium content gradually blue shifts from 630nm to 550nm from the center area to the outer area of the micro light emitting diode table top, and the light emitting wavelength of the InGaN/GaN quantum well with low indium content gradually blue shifts from 550nm to 450nm.
S7, the luminous wavelength distribution of the micro light emitting diode mesa array formed in the step S1-S6 is tested through cathode fluorescence spectrum scanning, as shown in FIG. 6, an annular region with the luminous center wavelength in the range of 610-630 nm is defined as a red sub-pixel region 301, an annular region with the luminous center wavelength in the range of 510-530 nm is defined as a green sub-pixel region 302, and an annular region with the luminous center wavelength in the range of 450-470 nm is defined as a blue sub-pixel region 303.
S8, as shown in FIG. 7 and FIG. 8, three circles of annular Ni/Au metal stacks are deposited on the micro light emitting diode mesa array prepared in the steps S1-S6 to serve as a p-type electrode layer 401, and the surfaces of red, green and blue sub-pixel areas shown in FIG. 6 are covered by using photoetching, metal deposition and stripping processes.
S9, as shown in FIG. 9, by using the p-type electrode layer prepared in the step S8 as a mask, performing an Ar + ion implantation process, wherein the dosage of Ar + ions is 4×10 12cm-2, and the energy is 40keV, so that the p-type conductive layer between the red, green and blue three-primary-color sub-pixels which are not covered by the mask is converted into a high-resistance region 601, thereby realizing device isolation between the red, green and blue sub-pixels.
S10, as shown in fig. 10, the micro light emitting diode mesa array prepared in step S9 is bonded on the temporary substrate 701.
S11, as shown in FIG. 11, the silicon substrate is removed by using KOH solution for corrosion, and the micro light emitting diode mesa array is remained on the temporary substrate. In the micro light emitting diode mesa structure on the temporary substrate, a temporary bonding layer 801, a p-type electrode layer 401, a p-type conductive layer 205, an InGaN/GaN composite multiple quantum well layer 204, an n-type GaN layer 203, an AlGaN stress modulation layer 202, and an AlN buffer layer 201 are sequentially arranged from bottom to top.
S12, as shown in fig. 12, the AlN buffer layer and the AlGaN stress modulation layer in the mesa structure of the micro light emitting diode in step S11 are removed using photolithography and etching processes, exposing the n-type GaN layer 203.
S13, as shown in fig. 13, an ITO thin film is deposited as an n-type transparent electrode layer 1001 and an Au metal layer as a transparent electrode bonding layer 1002 on the n-type GaN layer exposed in the mesa structure of the micro light emitting diode in step S12.
S14, as shown in fig. 14, the micro light emitting diode mesa array deposited with the n-type transparent electrode layer and the transparent electrode bonding layer is bonded on the transparent substrate 1101.
S15, as shown in fig. 15, the temporary substrate described in step S10 is removed.
S16, cutting the micro light-emitting diode mesa arrays on the transparent substrate prepared in the steps S1-S15 into chips, wherein each chip comprises mesa arrays formed by 4 micro light-emitting diode mesas, and thus the nitride full-color integrated micro light-emitting diode display chip shown in fig. 2 and 3 is realized.
The beneficial effects of the invention are as follows:
(1) The nitride full-color integrated micro light-emitting diode display chip disclosed by the invention integrates the red, green and blue three-primary-color sub-pixels, and greatly reduces the difficulty of the mass transfer process of the full-color micro light-emitting diode display chip.
(2) The red, green and blue sub-pixels of the nitride full-color integrated micro light emitting diode display chip disclosed by the invention are positioned on the same micro light emitting diode table top, have higher integration level, and are favorable for realizing full-color micro light emitting diode display with high pixel density and improving full-color mixing effect.
(3) The nitride full-color integrated micro light-emitting diode display chip disclosed by the invention has the micro light-emitting diode table top with a vertical structure, and is beneficial to improving the current injection efficiency and the photoelectric performance of the micro light-emitting diode device.
(4) The preparation method of the nitride full-color integrated miniature light-emitting diode display chip can finish the preparation of the red, green and blue three-primary-color InGaN/GaN composite multi-quantum well only by implementing an epitaxial process once, thereby simplifying the process flow.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, which are intended to facilitate an understanding of the principles and concepts of the invention and are to be varied in scope and detail by persons of ordinary skill in the art based on the teachings herein. In view of the foregoing, this description should not be construed as limiting the invention.

Claims (6)

1. The nitride full-color integrated miniature LED display chip is characterized by comprising a transparent substrate, a transparent electrode bonding layer and a mesa array formed by single or a plurality of miniature LED mesas;
the micro light-emitting diode table top or the table top array is connected with the transparent substrate through the transparent electrode bonding layer;
The structure of the micro light-emitting diode mesa sequentially comprises an n-type transparent electrode layer, an n-type GaN layer, an InGaN/GaN composite multi-quantum well layer with one or a plurality of periods, a p-type conductive layer and a p-type electrode layer from the transparent substrate and the transparent electrode bonding layer;
The InGaN/GaN composite multi-quantum well layer in each period comprises a plurality of InGaN/GaN quantum wells with high indium content and a plurality of InGaN/GaN quantum wells with low indium content, wherein the central area of the micro light emitting diode table top is dominated by the InGaN/GaN quantum wells with high indium content to emit light;
The indium component of the InGaN well layer in the InGaN/GaN composite multi-quantum well layer shows gradually reduced distribution trend from the central area of the micro light-emitting diode table top to the outer ring area, the light-emitting wavelength of the InGaN/GaN quantum well with high indium content gradually blue-shifts from 630nm to 550nm from the central area of the micro light-emitting diode table top to the outer ring area, and the light-emitting wavelength of the InGaN/GaN quantum well with low indium content gradually blue-shifts from 550nm to 450nm from the central area of the micro light-emitting diode table top to the outer ring area;
The light-emitting wavelength range of the micro light-emitting diode table top covers red, green and blue three-primary-color wave bands, light-emitting areas corresponding to the red, green and blue three-primary-color wave bands in the micro light-emitting diode table top are distributed in a ring shape, a ring-shaped area with the light-emitting central wavelength range of 610 to 630nm in the micro light-emitting diode table top is a red light sub-pixel area, a ring-shaped area with the light-emitting central wavelength range of 510 to 530nm in the micro light-emitting diode table top is a green light sub-pixel area, and a ring-shaped area with the light-emitting central wavelength range of 450 to 470nm in the micro light-emitting diode table top is a blue light sub-pixel area.
2. The nitride full-color integrated micro light emitting diode display chip according to claim 1, wherein the micro light emitting diode mesa is columnar or stepped, the width of the micro light emitting diode mesa ranges from 100nm to 100 μm, and the mesa pitch of the micro light emitting diode mesa ranges from 100nm to 100 μm.
3. The nitride full-color integrated micro light emitting diode display chip of claim 1, wherein the n-type GaN layer has a tensile stress distribution trend gradually decreasing from the center of the mesa to the outer ring.
4. The nitride full-color integrated micro light emitting diode display chip of claim 1, wherein the p-type conductive layer comprises a p-type AlGaN electron blocking layer and a p-type GaN layer;
The p-type conducting layer positioned among the red sub-pixel region, the green sub-pixel region and the blue sub-pixel region is converted into a high-resistance layer through ion implantation, and the p-type conducting layer positioned on the red sub-pixel region, the green sub-pixel region and the blue sub-pixel region is not subjected to ion implantation treatment.
5. The nitride full-color integrated micro light emitting diode display chip of claim 4, wherein the p-type electrode layer is annularly distributed;
The p-type electrode layer is positioned on the surface of the p-type conductive layer which is not subjected to ion implantation treatment.
6. A method for manufacturing a nitride full-color integrated micro light emitting diode display chip, which is applied to the nitride full-color integrated micro light emitting diode display chip according to any one of claims 1 to 5, the method comprising:
S1, providing an original silicon substrate with the surface of (111) crystal face;
S2, etching the surface of the original silicon substrate in the step S1 into a columnar or stepped silicon substrate mesa array by using photoetching and etching processes, wherein the height range of a mesa in the silicon substrate mesa array is 10-100 mu m, the width range of the silicon substrate mesa array is 10-100 mu m, and the interval range of the silicon substrate mesa array is 10-100 mu m;
S3, sequentially extending an AlN buffer layer, an AlGaN stress modulation layer and an n-type GaN layer on the silicon substrate table top array prepared in the step S2 by using metal organic chemical vapor deposition equipment to obtain an n-type GaN table top array, and adjusting structural parameters of the AlGaN stress modulation layer according to stress release action of the side wall of the table top to enable the n-type GaN table top prepared in the step S3 to be in a tensile stress state with high center and low outer ring distribution trend, wherein the structural composition of the AlGaN stress modulation layer comprises one or more of an uniform component AlGaN structure, a gradual component AlGaN structure, an AlN/AlGaN superlattice structure, an AlGaN/GaN superlattice structure and an AlN/GaN superlattice structure;
S4, one or a plurality of periods of InGaN/GaN composite multi-quantum well layers are extended on the n-type GaN mesa array prepared in the step S3, wherein each period of InGaN/GaN composite multi-quantum well layer comprises a plurality of high-indium-content InGaN/GaN quantum wells and a plurality of low-indium-content InGaN/GaN quantum wells;
S5, extending a p-type conducting layer on the InGaN/GaN composite multi-quantum well layer in the step S4 to obtain a nitride micro light-emitting diode mesa array, wherein the p-type conducting layer comprises a p-type AlGaN electron blocking layer and a p-type GaN layer;
S6, according to the principle that tensile stress promotes indium atom lattice incorporation, the tensile stress distribution trend of the n-type GaN mesa in the step S3 is regulated and controlled by optimizing the morphology parameters of the silicon substrate mesa in the step S2 and the structural parameters of the AlGaN stress modulation layer in the step S3, so that the indium component of the InGaN well layer of the InGaN/GaN composite multi-quantum well layer prepared in the step S4 is gradually reduced from the central area of the mesa to the outer ring area, and the epitaxial growth parameters of the InGaN/GaN composite multi-quantum well layer in the step S4 are optimized, so that the light-emitting wavelength of the high-indium-content InGaN/GaN quantum well is gradually blue-shifted from 630nm to 550nm, and the light-emitting wavelength of the low-indium-content InGaN/GaN quantum well is gradually blue-shifted from 550nm to 450nm;
s7, determining a red sub-pixel area, a green sub-pixel area and a blue sub-pixel area;
s8, depositing annular p-type electrode layers on the red light sub-pixel region, the green light sub-pixel region and the blue light sub-pixel region of the micro light emitting diode mesa prepared in the steps S1-S6 by using photoetching, metal evaporation and stripping processes;
S9, performing an ion implantation process by taking the p-type electrode layer prepared in the step S8 as a mask, and converting a mask-free coverage area among the red sub-pixel area, the green sub-pixel area and the blue sub-pixel area into a high-resistance layer;
s10, bonding the micro light-emitting diode mesa array prepared in the step S9 on a temporary substrate;
S11, removing the original silicon substrate by using alkaline corrosive liquid, and fixing the micro light-emitting diode mesa array on the temporary substrate;
S12, removing the AlN buffer layer and the AlGaN stress modulation layer in the micro light-emitting diode table top in the step S11 by using photoetching and etching processes;
s13, depositing an n-type transparent electrode layer and a transparent electrode bonding layer on the n-type GaN layer exposed in the step S12 by using photoetching, metal evaporation and stripping processes;
S14, bonding the micro light-emitting diode mesa array deposited with the n-type transparent electrode layer and the transparent electrode bonding layer on a transparent substrate;
S15, removing the temporary substrate in the step S10;
S16, cutting the micro light-emitting diode table top arrays on the transparent substrate prepared in the steps S1-S15 into chips, wherein each chip comprises a single or a plurality of silicon substrate table top arrays formed by the micro light-emitting diode table tops.
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