CN120002006A - A method for suppressing poor fusion defects of TiAl alloy formed by electron beam selective melting - Google Patents
A method for suppressing poor fusion defects of TiAl alloy formed by electron beam selective melting Download PDFInfo
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Abstract
The invention discloses a method for inhibiting poor fusion defects of TiAl alloy formed by electron beam selective fusion, which comprises the steps of firstly, modeling, cutting layers to obtain two-dimensional slices, secondly, designing scanning paths of the two-dimensional slices to adopt parallel scanning lines which are parallel to each other and have equal intervals, and enabling the central lines of the scanning paths of adjacent two-dimensional slices to be misplaced, thirdly, paving TiAl alloy powder after preheating a forming substrate, fourthly, preheating the powder, fifthly, scanning and melting to form a single-layer solid deposition layer, lowering the forming substrate, and sixthly, repeatedly paving the powder, preheating, scanning, melting and lowering the forming substrate in sequence to form the TiAl alloy. The invention controls the dislocation of the central lines of the scanning paths of the adjacent two-dimensional slices, so that the dislocation stacking and filling of the interlayer parallel scanning lines form a gap, thereby inhibiting poor fusion defects, obtaining TiAl alloy with high density, eliminating the defects without working procedures such as hot isostatic pressing and the like, and being suitable for the field of additive preparation of TiAl alloy.
Description
Technical Field
The invention belongs to the technical field of electron beam selective melting additive manufacturing, and particularly relates to a method for inhibiting poor fusion defects of an electron beam selective melting TiAl alloy.
Background
The density of the TiAl metal compound alloy is only 3.8g/cm 3～4.0g/cm3, the alloy is 1/2 of nickel-based superalloy, the alloy is lower than that of titanium alloy by 10% -15%, the room temperature elastic modulus is 160 GPa-170 GPa, the elastic modulus is 33% higher than that of titanium alloy, the elastic modulus can be kept at 150GPa at a high temperature of 750 ℃ and is equivalent to that of GH4169 superalloy, the TiAl alloy also has high specific strength, the strength keeping rate of room temperature to 800 ℃ is 80%, and meanwhile, the alloy has high creep resistance, excellent oxidation resistance and flame retardance, can work at 760 ℃ to 800 ℃ for a long time, is a light high-temperature structural material with very promising development, and can be widely applied to high-temperature parts of aeroengines or automobiles, such as blades, turbine discs, air valves and the like.
The electron beam selective melting (electron beam melting, EBM) can realize the rapid preparation of the three-dimensional complex structural parts without mould and with high performance, and the principle is that based on the discrete/stacking forming principle, a three-dimensional CAD solid model of the parts is obtained by a computer, then layering software is used for layering and slicing in the height direction of the parts, the three-dimensional contour information of the parts is converted into two-dimensional contour information, a scanning path is generated, and the high-energy electron beam emitted by an electron gun is used for melting and depositing preset metal or alloy powder layer by layer according to the appointed scanning path, and the three-dimensional parts are stacked layer by layer. The EBM method is economical and quick, and is particularly suitable for preparing refractory metal or alloy parts which are difficult to process and have high performance.
The electron beam selective melting technology is suitable for manufacturing TiAl alloy products. Electron beam selective melting has been found to be suitable for the preparation of various TiAl alloy products, but a large number of unfused defects are common in forming TiAl alloys. Defects are eliminated by a hot isostatic pressing treatment or the like, but the metal structure coarsens and the strength is reduced. In addition, the hot isostatic pressing treatment has high cost and low efficiency, and is extremely unfavorable for the application and popularization of TiAl alloy.
At present, china is basically in the same development stage with abroad in the aspect of electron beam selective melting technology. The application of the technology for preparing the TiAl alloy by electron beam selective melting is promoted to a key link. Under the background and the opportunity, the defect that the selective melting of the electron beam is poor in fusion of the TiAl alloy is solved, and the method is very important to the development and the application of the technology.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method for inhibiting poor fusion defects of an electron beam selective fusion forming TiAl alloy aiming at the defects of the prior art. The invention controls the dislocation of the central lines of the scanning paths of the adjacent two-dimensional slices in the electron beam selective melting process to ensure that the parallel scanning lines between layers are staggered and stacked to fill the forming gaps, thereby inhibiting poor fusion defects, obtaining high-density TiAl alloy, avoiding the follow-up treatment such as hot isostatic pressing and the like, and solving the problem that a large number of unfused defects appear in the existing electron beam selective melting forming TiAl alloy.
In order to solve the technical problems, the invention adopts the technical scheme that the method for inhibiting the poor fusion defect of the TiAl alloy formed by electron beam selective fusion is characterized by comprising the following steps:
firstly, carrying out three-dimensional modeling according to a target product TiAl alloy, then carrying out layer cutting treatment on the obtained three-dimensional model along the height direction, dividing the three-dimensional model into a plurality of two-dimensional slices with uniform thickness, and obtaining two-dimensional slice data;
Step two, designing scanning paths of electron beam melting for the two-dimensional slices according to the two-dimensional slice data in the step one, wherein the scanning paths of the two-dimensional slices adopt parallel scanning lines which are parallel to each other and have equal intervals, the central lines of the scanning paths of the adjacent two-dimensional slices are staggered, and then the data of the scanning paths of electron beam melting are led into electron beam selective melting forming equipment;
preheating the forming substrate by utilizing an electron beam, and uniformly paving TiAl alloy powder on the preheated forming substrate by using a powder scraping device, wherein the paving thickness of the TiAl alloy powder is equal to the thickness of the two-dimensional slice in the first step;
step four, preheating TiAl alloy powder paved on the forming substrate in the step three by utilizing electron beams;
Scanning the preheated TiAl alloy powder in the fourth step by utilizing an electron beam according to scanning path data of electron beam melting introduced in the second step, so that the TiAl alloy powder at the scanning position of the electron beam is melted to form a molten pool, and is cooled and deposited along with the leaving of the electron beam to form a single-layer entity deposition layer, and then the forming substrate is lowered, wherein the lowering height is the same as the paving thickness of the TiAl alloy powder in the third step;
and step six, sequentially repeating the powder paving process in the step three, the preheating process in the step four, the scanning and melting process in the step five and the forming substrate descending process, so that the single-layer entity deposition layer is gradually accumulated to form a forming piece, and the TiAl alloy is obtained.
The electron beam selective melting forming process also comprises the steps of forming substrate preheating, powder preheating, scanning and melting, wherein an environment temperature foundation is laid for the melting forming process by preheating the forming substrate, powder is preliminarily coagulated by preheating the powder, powder splashing is prevented, the environment temperature is maintained, and a deposition layer is formed by scanning and melting.
The method for inhibiting the defective fusion of the TiAl alloy formed by electron beam selective fusion is characterized in that the thickness of the two-dimensional slice in the first step is 50 mu m.
The method for inhibiting the poor fusion defect of the TiAl alloy formed by electron beam selective fusion is characterized in that the distance between adjacent parallel scanning lines in the scanning paths of the two-dimensional slices in the second step is 0.1mm, and the distance between the center lines of the scanning paths of the adjacent two-dimensional slices in a dislocation mode is 0.05mm. The interval between adjacent parallel scanning lines is controlled, the interval between the central lines of adjacent two-dimensional slice scanning paths is controlled to be half of the interval between the adjacent parallel scanning lines, the effect of inhibiting the poor fusion defect of the staggered stacking of the interlayer parallel scanning lines is improved, and the forming quality of TiAl alloy is ensured.
The method for inhibiting the defective fusion defect of the TiAl alloy formed by electron beam selective fusion is characterized in that the forming substrate in the third step is a stainless steel forming substrate with the thickness of 10 mm.
The method for inhibiting the poor fusion defect of the TiAl alloy formed by electron beam selective fusion is characterized in that the preheating temperature of the forming substrate in the third step is 1000 ℃, the preheating parameter is that the electron beam scanning speed is 10000mm/s, and the electron beam current is 30mA.
The method for inhibiting the defective fusion of the TiAl alloy formed by electron beam selective fusion is characterized in that the composition of the TiAl alloy powder in the step three is expressed as Ti-48Al-2Cr-2Nb in atom percent, and the TiAl alloy powder is spherical or nearly spherical and has the particle size smaller than 150 mu m.
The method for inhibiting the poor fusion defect of the TiAl alloy formed by selective electron beam melting is characterized in that the preheating parameters of the TiAl alloy powder in the fourth step are that the scanning speed of an electron beam is 10000mm/s, the current of the electron beam is 40mA, and the preheating time is 20s.
The method for inhibiting the poor fusion defect of the TiAl alloy formed by electron beam selective fusion is characterized in that the electron beam acceleration voltage of electron beam selective fusion forming equipment in the forming process is 60kV.
The method for inhibiting the poor fusion defect of the TiAl alloy formed by electron beam selective fusion is characterized in that scanning and fusion parameters of the preheated TiAl alloy powder in the fifth step are that the scanning speed of an electron beam is 5000mm/s and the current of the electron beam is 12mA.
The method for inhibiting the poor fusion defect of the TiAl alloy formed by electron beam selective melting is characterized in that after a formed piece is formed in the step six, inert gas is filled into the formed area to accelerate cooling to a temperature lower than 60 ℃, and the formed piece is taken out and cooled to room temperature.
Compared with the prior art, the invention has the following advantages:
1. The invention adopts the electron beam selective melting method, designs the scanning path of electron beam melting, controls the dislocation of the central lines of the scanning paths of adjacent two-dimensional slices to ensure that the parallel scanning lines between layers are staggered and stacked to fill forming gaps, thereby inhibiting poor fusion defects, improving the density of TiAl alloy formed by melting the electron beam selective melting, eliminating the poor fusion defects without the subsequent hot isostatic pressing treatment, reducing processing procedures, shortening development period, reducing manufacturing cost and improving the preparation efficiency and economy of the TiAl alloy.
2. The electron beam selection melting process is hardly limited by the shape of a product, parts with complex shapes can be directly processed, near net forming is not needed or only needs little post-treatment, forging, casting and dies are not needed in the forming process, alloy pollution is avoided, the manufacturing period is obviously shortened, the manufacturing cost is reduced, raw and redundant TiAl alloy powder can be recycled, and the material utilization rate is high.
3. The electron beam selection melting process adopts a high vacuum environment, has better protection effect on the TiAl alloy in a high temperature state, can effectively avoid the oxidation of the TiAl alloy, and ensures the performance of the TiAl alloy.
4. When the TiAl alloy is formed by the electron beam selection melting process, the size of a molten pool formed by melting the TiAl alloy powder is very small, and the solidification time is very short, so that the cooling speed is very high, the solidification time is very short, the micro segregation of the TiAl alloy can be effectively reduced, the density of the TiAl alloy is high, and the TiAl alloy has a fine and uniform lamellar structure, thereby obtaining the TiAl alloy with excellent mechanical property.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
FIG. 1 is a schematic diagram of a scan path for each two-dimensional slice of a three-dimensional model slice processing and design established in the present invention.
FIG. 2 is a schematic illustration of the misalignment of the center lines of the scan paths of adjacent two-dimensional slices in the present invention.
Fig. 3 is a schematic view of a structure of an electron beam selective melt forming apparatus employed in the present invention.
FIG. 4 is a metallographic structure of TiAl alloy prepared in example 1 of the present invention.
FIG. 5 is a metallographic structure diagram of the TiAl alloy prepared in comparative example 1 of the present invention.
Description of the reference numerals
1-Electron gun, 2-electron beam, 3-focusing coil;
4-deflection coil, 5-powder spreading mechanism and 6-TiAl alloy powder;
7-deposition body, 8-forming base plate and 9-electron beam selective melting forming equipment.
Detailed Description
Example 1
The embodiment comprises the following steps:
firstly, carrying out three-dimensional modeling by adopting three-dimensional drawing software CAD according to a target product TiAl alloy, then carrying out layer cutting treatment on a three-dimensional model along the height direction, dividing the three-dimensional model into a plurality of two-dimensional slices with the thickness of 50 mu m, as shown in figure 1, and acquiring two-dimensional slice data;
Step two, according to the two-dimensional slice data in the step one, designing scanning paths of electron beam melting for each two-dimensional slice, wherein the scanning paths of each two-dimensional slice adopt parallel scanning lines which are parallel to each other and have adjacent intervals of 0.1mm, as shown in fig. 1, the central lines of the scanning paths of the adjacent two-dimensional slices are staggered, the staggered intervals are 0.05mm, as shown in fig. 2, namely, the two-dimensional slice scanning paths corresponding to odd layers are identical, the two-dimensional slice scanning paths corresponding to even layers are identical, and then the data of the scanning paths of electron beam melting are led into electron beam selective area melting forming equipment 9 shown in fig. 3;
Step three, filling TiAl alloy powder 6 into a powder spreading mechanism 5 of electron beam selective melting forming equipment 9, vacuumizing the electron beam selective melting forming equipment 9, utilizing an electron gun 1 to emit electron beams 2, controlling the accelerating voltage of the electron beams to be 60kV, and under the action of a focusing coil 3 and a deflection coil 4, preheating a forming substrate 8, wherein the preheating parameters are that the scanning speed of the electron beams is 10000mm/s, the current of the electron beams is 30mA, after the preheating temperature reaches 1000 ℃, uniformly spreading TiAl alloy powder 6 on the preheated forming substrate 8 through a powder scraping device in the powder spreading mechanism 5, and the paving thickness of the TiAl alloy powder 6 is 50 mu m equal to the thickness of a two-dimensional slice in the step one;
The TiAl alloy powder is expressed as Ti-48Al-2Cr-2Nb in atomic percent, is spherical or nearly spherical and has a particle size smaller than 150 mu m, and the forming substrate 8 is a stainless steel forming substrate with a thickness of 10 mm;
Step four, emitting an electron beam 2 by using an electron gun 1, and preheating TiAl alloy powder 6 paved on a forming substrate in the step three under the action of a focusing coil 3 and a deflection coil 4, wherein the preheating parameters are that the scanning speed of the electron beam is 10000mm/s, the current of the electron beam is 40mA, and the preheating time is 20s;
Scanning the preheated TiAl alloy powder 6 in the fourth step by utilizing an electron beam according to scanning path data of electron beam melting introduced in the second step, so that the TiAl alloy powder 6 at the scanning position of the electron beam is melted and deposited to form a deposition body 7, wherein the scanning and melting parameters are that the scanning speed of the electron beam is 5000mm/s, the current of the electron beam is 12mA, and the electron beam is cooled and deposited along with the leaving of the electron beam to form a single-layer solid deposition layer, and then the forming substrate 8 is lowered by 50 mu m;
And step six, sequentially repeating the powder paving process in the step three, the preheating process in the step four, the scanning and melting process in the step five and the forming substrate descending process, so that the single-layer entity deposition layer is gradually accumulated to form a forming piece, after the forming piece is formed, filling inert gas into a forming area to accelerate cooling to a temperature lower than 60 ℃, taking out the forming piece, and cooling to room temperature to obtain the TiAl alloy.
Comparative example 1
The comparative example differs from example 1 in that the scan path design of each two-dimensional slice in step two is identical and there is no misalignment.
Fig. 4 is a metallographic structure diagram of the TiAl alloy prepared in example 1 of the present invention, fig. 5 is a metallographic structure diagram of the TiAl alloy prepared in comparative example 1 of the present invention, and comparing fig. 4 with fig. 5, it can be known that there are obvious unfused defects (black dots in the drawing) in the metallographic structure of the TiAl alloy in fig. 5, and the unfused defects (black dots in the drawing) in the metallographic structure of the TiAl alloy in fig. 4 are obviously suppressed, which means that compared with the conventional design of the scanning path of each two-dimensional slice, the present invention makes the parallel scanning lines between layers staggered and stacked to fill the forming gap by designing the center lines of the scanning paths of the adjacent two-dimensional slices to suppress the poor fusion defects, and obtain the high-density TiAl alloy.
The above description is only of the preferred embodiments of the present invention, and is not intended to limit the present invention. Any simple modification, variation and equivalent variation of the above embodiments according to the technical substance of the invention still fall within the scope of the technical solution of the invention.
Claims (10)
1. A method for inhibiting defective fusion of an electron beam selective fusion forming TiAl alloy is characterized by comprising the following steps:
firstly, carrying out three-dimensional modeling according to a target product TiAl alloy, then carrying out layer cutting treatment on the obtained three-dimensional model along the height direction, dividing the three-dimensional model into a plurality of two-dimensional slices with uniform thickness, and obtaining two-dimensional slice data;
Step two, designing scanning paths of electron beam melting for the two-dimensional slices according to the two-dimensional slice data in the step one, wherein the scanning paths of the two-dimensional slices adopt parallel scanning lines which are parallel to each other and have equal intervals, the central lines of the scanning paths of the adjacent two-dimensional slices are staggered, and then the data of the scanning paths of electron beam melting are led into electron beam selective melting forming equipment;
preheating the forming substrate by utilizing an electron beam, and uniformly paving TiAl alloy powder on the preheated forming substrate by using a powder scraping device, wherein the paving thickness of the TiAl alloy powder is equal to the thickness of the two-dimensional slice in the first step;
step four, preheating TiAl alloy powder paved on the forming substrate in the step three by utilizing electron beams;
Scanning the preheated TiAl alloy powder in the fourth step by utilizing an electron beam according to scanning path data of electron beam melting introduced in the second step, so that the TiAl alloy powder at the scanning position of the electron beam is melted to form a molten pool, and is cooled and deposited along with the leaving of the electron beam to form a single-layer entity deposition layer, and then the forming substrate is lowered, wherein the lowering height is the same as the paving thickness of the TiAl alloy powder in the third step;
and step six, sequentially repeating the powder paving process in the step three, the preheating process in the step four, the scanning and melting process in the step five and the forming substrate descending process, so that the single-layer entity deposition layer is gradually accumulated to form a forming piece, and the TiAl alloy is obtained.
2. The method for inhibiting defective fusion of a selected area of electron beam fusion formed TiAl alloy according to claim 1, wherein the thickness of the two-dimensional slice in the first step is 50 μm.
3. The method for inhibiting defective fusion of TiAl alloy by electron beam selective fusion forming according to claim 1, wherein the distance between adjacent parallel scanning lines in the scanning paths of each two-dimensional slice in the second step is 0.1mm, and the distance between the center lines of the scanning paths of the adjacent two-dimensional slices is 0.05mm.
4. The method for suppressing defective fusion of a selected area of electron beam fusion formed TiAl alloy according to claim 1, wherein the formed substrate in step three is a stainless steel formed substrate having a thickness of 10 mm.
5. The method for inhibiting defective fusion of a TiAl alloy by selective electron beam fusion forming according to claim 1, wherein the preheating temperature of the forming substrate in the third step is 1000 ℃, and the preheating parameters are electron beam scanning speed 10000mm/s and electron beam current 30mA.
6. The method for inhibiting defective fusion of a TiAl alloy formed by electron beam selective fusion according to claim 1, wherein the composition of the TiAl alloy powder in the third step is expressed as Ti-48Al-2Cr-2Nb in atomic percent, and the TiAl alloy powder is spherical or nearly spherical and has a particle size of less than 150 μm.
7. The method for inhibiting defective fusion of TiAl alloy by electron beam selective fusion forming according to claim 1, wherein the preheating parameters of the TiAl alloy powder in the fourth step are electron beam scanning speed 10000mm/s, electron beam current 40mA and preheating time 20s.
8. The method for inhibiting defective fusion of a selected area of electron beam fusion forming TiAl alloy according to claim 1, wherein the electron beam acceleration voltage of the selected area of electron beam fusion forming equipment is 60kV during the whole forming process of the single layer physical deposition layer in the fifth step.
9. The method for inhibiting defective fusion of TiAl alloy by electron beam selective fusion forming according to claim 1, wherein the scanning and melting parameters of the preheated TiAl alloy powder in the fifth step are that the scanning speed of electron beam is 5000mm/s and the current of electron beam is 12mA.
10. The method for inhibiting defective fusion of a TiAl alloy by electron beam selective fusion forming according to claim 1, wherein after forming the formed piece in the sixth step, inert gas is filled into the forming area to accelerate cooling to a temperature below 60 ℃, and the formed piece is taken out and cooled to room temperature.
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| CN107931609A (en) * | 2017-11-24 | 2018-04-20 | 西北有色金属研究院 | A kind of preparation method of TiAl alloy turbo blade |
| CN113414406A (en) * | 2021-07-01 | 2021-09-21 | 上海交通大学 | Method for improving density of magnesium/magnesium alloy part manufactured by selective laser melting additive |
| WO2021212887A1 (en) * | 2020-04-22 | 2021-10-28 | 中国航发上海商用航空发动机制造有限责任公司 | Method for prefabricating air hole defect by means of controlled slm process |
| CN116117164A (en) * | 2023-02-27 | 2023-05-16 | 西北有色金属研究院 | Method for regulating and controlling tissues in selective melting process of TiAl alloy electron beam |
| CN116213758A (en) * | 2023-02-27 | 2023-06-06 | 西北有色金属研究院 | A Method for Controlling Microstructure of Ti-1300 Alloy During Electron Beam Selective Melting |
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2025
- 2025-03-24 CN CN202510350885.6A patent/CN120002006A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107931609A (en) * | 2017-11-24 | 2018-04-20 | 西北有色金属研究院 | A kind of preparation method of TiAl alloy turbo blade |
| WO2021212887A1 (en) * | 2020-04-22 | 2021-10-28 | 中国航发上海商用航空发动机制造有限责任公司 | Method for prefabricating air hole defect by means of controlled slm process |
| CN113414406A (en) * | 2021-07-01 | 2021-09-21 | 上海交通大学 | Method for improving density of magnesium/magnesium alloy part manufactured by selective laser melting additive |
| CN116117164A (en) * | 2023-02-27 | 2023-05-16 | 西北有色金属研究院 | Method for regulating and controlling tissues in selective melting process of TiAl alloy electron beam |
| CN116213758A (en) * | 2023-02-27 | 2023-06-06 | 西北有色金属研究院 | A Method for Controlling Microstructure of Ti-1300 Alloy During Electron Beam Selective Melting |
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