CN120006214A

CN120006214A - A high light transmittance, antistatic optical film and preparation method thereof

Info

Publication number: CN120006214A
Application number: CN202510156080.8A
Authority: CN
Inventors: 李俊; 李志华; 付涛; 李二壮
Original assignee: Dongguan Wanjiu Electronic Materials Co ltd
Current assignee: Dongguan Wanjiu Electronic Materials Co ltd
Priority date: 2025-02-12
Filing date: 2025-02-12
Publication date: 2025-05-16

Abstract

本发明提供了一种高透光性、抗静电光学薄膜，包括基体、SiN_x层、内Ag层/YF₃/ZnS交替层、外Ag层、GLC层；其中交替层数为5～10，其中Si₃N₄层厚度为10～40nm、内Ag层厚度为40～70nm、YF₃为20～30nm、ZnS层厚度为25～35nm、外Ag层厚度为10～20nm、GLC层厚度为40～60nm；所述光学薄膜在500～1200nm范围内平均透过率大于87％，纳米硬度为29～34GPa。采用多功能磁控溅射镀膜设备，根据膜层的性质控制不同的工艺条件连续、依次的完成各层的制备。制备的光学薄膜具有优异的透光性和抗静电性能，并且兼具了良好的硬度和耐磨性，能够显著提高使用寿命。The invention provides a highly light-transmitting, antistatic optical film, comprising a substrate, a SiN _x layer, an inner Ag layer/YF ₃ /ZnS alternating layer, an outer Ag layer, and a GLC layer; wherein the number of alternating layers is 5 to 10, wherein the thickness of the Si ₃ N ₄ layer is 10 to 40 nm, the thickness of the inner Ag layer is 40 to 70 nm, the thickness of the YF ₃ is 20 to 30 nm, the thickness of the ZnS layer is 25 to 35 nm, the thickness of the outer Ag layer is 10 to 20 nm, and the thickness of the GLC layer is 40 to 60 nm; the optical film has an average transmittance greater than 87% in the range of 500 to 1200 nm, and a nanohardness of 29 to 34 GPa. A multifunctional magnetron sputtering coating device is used to control different process conditions according to the properties of the film layer to continuously and sequentially complete the preparation of each layer. The prepared optical film has excellent light transmittance and antistatic properties, and has good hardness and wear resistance, and can significantly improve the service life.

Description

High-light-transmittance antistatic optical film and preparation method thereof

Technical Field

The invention relates to the technical field of optical films, in particular to a high-light-transmittance antistatic optical film and a preparation method thereof.

Background

Optical films are an important functional material and are widely used in modern technology. It is widely used in the fields of electronic display, optical lenses, photovoltaic industry, automobile glass and the like. For example, in an electronic display screen, an optical film is used to improve display effect and reduce energy consumption, and in the photovoltaic industry, the optical film can improve the light utilization rate, thereby improving the conversion efficiency of a battery.

Antistatic film refers to a property that enables the surface of a film to suppress or eliminate the generation and accumulation of static electricity by a specific technique or material treatment, thereby preventing the static electricity from damaging a product or equipment. The principle of antistatic films is mainly based on several mechanisms of reducing the surface resistance by adding conductive materials (such as antistatic agents, conductive fillers or conductive polymers) to the surface or inside of the film, so that the surface resistance of the film is reduced and static charge can be rapidly dissipated. Moisture absorption effect some antistatic agents contain moisture absorption components, which can absorb moisture in air, increase the humidity of the surface of the film, reduce the surface resistance, and thus reduce the generation of static electricity. Ion exchange-antistatic agent neutralizes the charge on the surface of the film by ion exchange, reducing static accumulation. Surface modification, namely changing the charge transmission characteristics of the surface of the film by physical or chemical methods (such as electron beam treatment, chemical vapor deposition and the like) so as to ensure that static electricity is not easy to accumulate.

Antistatic films are widely used in electronics, communications, medical, food, and other fields, particularly in the electronics industry, for protecting electronic components from electrostatic damage. For example, in products such as electronic display screens, touch screens, liquid crystal panels, and the like, the antistatic film can prevent damage to the circuit from electrostatic discharge. In the packaging material, the antistatic film is used for preventing dust adsorption and static electric spark, and protecting the safety of the product in the transportation and storage processes. The antistatic film has the advantages of improving safety and effectively preventing the damage of static discharge to sensitive equipment or elements. Reducing dust adsorption, namely reducing the adsorption of static electricity to dust by reducing surface resistance and keeping the surface of a product clean. The environment adaptability is strong, and some novel antistatic films can keep stable antistatic performance even in low humidity environment.

When the conventional optical film is required to have high light transmittance, it is often difficult to simultaneously satisfy good antistatic performance. For example, some films doped with antistatic particles have significantly reduced light transmittance, although they have better antistatic effects. On the other hand, in a relatively large number of cases, the optical film is required to have good hardness and wear resistance so as to ensure the service life.

Disclosure of Invention

Based on the needs and the shortcomings of the prior art, the high-light-transmittance antistatic optical film and the preparation method thereof are provided, and the prepared optical film has excellent light transmittance and antistatic performance, good hardness and wear resistance and can obviously prolong the service life.

In order to achieve the purpose of the invention, the invention is realized by the following technical scheme:

The high-light-transmittance antistatic optical film comprises a substrate, a SiN _x layer, an inner Ag layer/YF ₃/ZnS alternating layer, an outer Ag layer and a GLC layer, wherein the alternating layer number is 5-10, the thickness of the Si ₃N₄ layer is 10-40 nm, the thickness of the inner Ag layer is 40-70 nm, the thickness of the YF ₃ layer is 20-30 nm, the thickness of the ZnS layer is 25-35 nm, the thickness of the outer Ag layer is 10-20 nm, and the thickness of the GLC layer is 40-60 nm.

Further, the substrate is glass, quartz or a polymer.

Further, the average transmittance of the optical film is more than 87% in the range of 500-1200 nm, and the nano hardness is 29-34 GPa.

A preparation method of a high-light-transmittance antistatic optical film comprises the following steps:

(1) The substrate is fixed on a mounting frame of a multifunctional magnetron sputtering coating device, and Si ₃N₄ target, silver target, YF ₃ target, znS target and carbon target are fixed on the target position;

(3) The glow cleaning comprises the steps of vacuumizing a reaction cavity to 10 ^-3 Pa, heating the reaction cavity to 350-400 ℃, introducing argon gas into the reaction cavity, controlling flow, switching on a substrate bias power supply, switching on an ion source, and carrying out glow cleaning on a substrate;

(4) Starting a Si ₃N₄ target radio frequency power supply, controlling argon flow, setting a substrate bias voltage, depositing a Si ₃N₄ layer on the surface of the substrate, and closing the Si ₃N₄ target radio frequency power supply after the deposition is finished;

(5) Starting a silver target direct current power supply, controlling argon flow, setting a substrate bias voltage, depositing an inner Ag layer, and closing the silver target direct current power supply after the deposition is finished;

(6) Turning on a YF ₃ target radio frequency power supply, turning off a substrate bias power supply, reducing the temperature of a reaction cavity to 200-240 ℃, controlling the flow of argon, depositing a YF ₃ layer on the surface of a substrate, and turning off a YF ₃ target radio frequency power supply after the deposition is finished;

(7) Turning on a ZnS target radio frequency power supply, controlling the flow of argon, depositing a ZnS layer on the surface of the substrate, and turning off the ZnS target radio frequency power supply after the deposition is finished;

(8) Repeating the steps (6) - (7) for 5-10 times;

(9) Starting a silver target direct current power supply, raising the temperature of the reaction cavity to 350-400 ℃, starting a matrix bias power supply, controlling the flow of argon, setting a matrix bias, depositing an outer Ag layer, and closing the silver target direct current power supply after the deposition is finished;

(10) Starting a carbon target direct current power supply, controlling argon flow, setting a substrate bias voltage, depositing a GLC layer, and closing the carbon target direct current power supply after the deposition is finished;

(11) And (5) turning off the power supply, stopping introducing argon, opening the reaction cavity when the temperature is reduced to room temperature, and taking out the substrate.

Further, the target material in the step (2) is a high-purity target material, and the purity is more than 99.9%.

Further, in the step (3), the argon flow is 80-100 sccm, the substrate bias is-90 to-120V, and the cleaning time is 30-40 min.

Further, in the step (4), the argon flow is 120-150 sccm, the substrate bias is-80 to-100V, si ₃N₄, the target current is 30-40A, the radio frequency power supply frequency is 30-40 kHz, the voltage is 250-350V, and the deposition time is 10-20 min.

Further, in the step (5), the argon flow is 80-100 sccm, the substrate bias is-90 to-130V, the silver target current is 15-20A, the voltage is 300-400V, and the deposition time is 25-35 min.

Further, in the step (6), the argon flow is 100-120 sccm, the YF ₃ target current is 20-30A, the radio frequency power supply frequency is 30-40 kHz, the voltage is 300-400V, and the deposition time is 5-10 min.

Further, in the step (7), the argon flow is 100-120 sccm, the ZnS target current is 15-20A, the radio frequency power supply frequency is 30-40 kHz, the voltage is 300-350V, and the deposition time is 5-10 min.

Further, in the step (9), the argon flow is 80-100 sccm, the substrate bias is-90 to-130V, the silver target current is 15-20A, the voltage is 250-300V, and the deposition time is 15-25 min.

Further, in the step (10), the argon flow is 80-100 sccm, the substrate bias is-50 to-60V, the carbon target current is 10-15A, the voltage is 200-250V, and the deposition time is 40-60 min.

Silver has extremely high reflectivity in the visible and infrared regions, which allows the silver layer to effectively reflect light, although the loss of light energy can be reduced and the efficiency of the optical system improved. However, there is only moderate light transmittance in the visible range, which means that most of the light is reflected while only some of the light is transmitted. Is disadvantageous for optical transparency. In order to ensure the light transmittance, the invention researches and screens the components and the thickness of each coating layer by the structure of the multilayer coating layer, and finally determines the optical film with the coating layer structure.

According to the invention, the graphite-like carbon-based film (GLC layer) is adopted as the outermost layer, the excellent mechanical property of the GLC-like carbon-based film is utilized to ensure the hardness and wear resistance of the coating, and meanwhile, the GLC layer is adopted as the protective layer to effectively inhibit the reduction of the performance of the optical film caused by the oxidation of Ag.

In addition, the surface energy of the graphite-like carbon-based material is lower, dust and impurities are not easy to adsorb, and therefore the generation of static electricity is reduced. Thus, the graphite-like carbon-based layer has antistatic properties to some extent. In addition, silver is also an excellent conductive material and also has certain antistatic properties. The outer Ag layer and the GLC layer jointly realize the improvement of antistatic performance, and the good antistatic performance of the optical film is ensured on the basis of not additionally adding a coating.

The invention has the following beneficial effects to the prior art:

(1) According to the invention, the YF ₃/ZnS alternating layers are adopted as the main structure of the optical film, so that the influence of the silver layer on the light transmittance can be effectively improved and compensated, the average transmittance of the optical film in the range of 500-1200 nm is finally enabled to be more than 87%, the requirements of electronic components on the optical performance can be met, and meanwhile, the effect of the silver layer serving as a transparent electrode is also reserved.

(2) The optical film prepared by the invention also has good antistatic performance, meets the antistatic application requirements of electronic components, and simultaneously has excellent mechanical properties of GLC (GLC) and endows the whole coating structure with good hardness and wear resistance.

(3) The coating structure adopts a sputtering mode, and multifunctional magnetron sputtering coating equipment is adopted in the preparation process, so that the whole coating process can be completed without taking out a substrate, and the production efficiency is improved to a great extent.

Detailed Description

The invention will be further described with reference to specific examples, but the scope of the invention is not limited thereto.

The substrate of the following example adopts K9 glass (40X 20X 2mm size), and the coating equipment is a JGP-560 ultrahigh vacuum multi-target magnetron sputtering coating system.

Example 1

(3) The glow cleaning comprises the steps of vacuumizing a reaction cavity to 10 ^-3 Pa, heating the reaction cavity to 350 ℃, introducing argon gas into the reaction cavity, controlling the flow, opening a substrate bias power supply, starting an ion source, and cleaning the substrate glow;

(6) Turning on a YF ₃ target radio frequency power supply, turning off a substrate bias power supply, reducing the temperature of a reaction cavity to 200 ℃, controlling the flow of argon, depositing a YF ₃ layer on the surface of a substrate, and turning off a YF ₃ target radio frequency power supply after the deposition is finished;

(8) Repeating steps (6) - (7) 5 times;

(9) Starting a silver target direct current power supply, raising the temperature of the reaction cavity to 350 ℃, starting a matrix bias power supply, controlling the flow of argon, setting a matrix bias, depositing an outer Ag layer, and closing the silver target direct current power supply after the deposition is finished;

Wherein the target material in the step (2) is a high-purity target material, and the purity is more than 99.9%.

Wherein, in the step (3), the argon flow is 80sccm, the substrate bias is-90V, and the cleaning time is 30min.

Wherein, in the step (4), the argon flow is 120sccm, the substrate bias is-80V, si ₃N₄, the target current is 30A, the radio frequency power supply frequency is 30kHz, the voltage is 250V, and the deposition time is 10min.

Wherein, in the step (5), the argon flow is 80sccm, the substrate bias voltage is-90V, the silver target current is 15A, the voltage is 300V, and the deposition time is 25min.

Wherein, in the step (6), the argon flow is 100sccm, the YF ₃ target current is 20A, the radio frequency power supply frequency is 30kHz, the voltage is 300V, and the deposition time is 5min.

Wherein, in the step (7), the argon flow is 100sccm, the ZnS target current is 15A, the radio frequency power supply frequency is 30kHz, the voltage is 300V, and the deposition time is 5min.

Wherein, in the step (9), the argon flow is 80sccm, the substrate bias voltage is-90V, the silver target current is 15A, the voltage is 250V, and the deposition time is 15min.

Wherein, in the step (10), the argon flow is 80sccm, the substrate bias is-50V, the carbon target current is 10A, the voltage is 200V, and the deposition time is 40min.

Example 2

(3) The glow cleaning comprises the steps of vacuumizing a reaction cavity to 10 ^-3 Pa, heating the reaction cavity to 400 ℃, introducing argon gas into the reaction cavity, controlling the flow, opening a substrate bias power supply, starting an ion source, and cleaning the substrate glow;

(6) Turning on a YF ₃ target radio frequency power supply, turning off a substrate bias power supply, reducing the temperature of a reaction cavity to 240 ℃, controlling the flow of argon, depositing a YF ₃ layer on the surface of a substrate, and turning off a YF ₃ target radio frequency power supply after the deposition is finished;

(8) Repeating steps (6) - (7) 10 times;

(9) Starting a silver target direct current power supply, raising the temperature of the reaction cavity to 400 ℃, starting a matrix bias power supply, controlling the flow of argon, setting a matrix bias, depositing an outer Ag layer, and closing the silver target direct current power supply after the deposition is finished;

Wherein, in the step (3), the argon flow is 100sccm, the substrate bias is-120V, and the cleaning time is 40min.

Wherein, in the step (4), the argon flow is 150sccm, the substrate bias is-100V, si ₃N₄, the target current is 40A, the radio frequency power supply frequency is 40kHz, the voltage is 350V, and the deposition time is 20min.

Wherein, in the step (5), the argon flow is 100sccm, the substrate bias voltage is-130V, the silver target current is 20A, the voltage is 400V, and the deposition time is 35min.

Wherein, in the step (6), the argon flow is 120sccm, the YF ₃ target current is 30A, the radio frequency power supply frequency is 40kHz, the voltage is 400V, and the deposition time is 10min.

Wherein, in the step (7), the argon flow is 120sccm, the ZnS target current is 20A, the radio frequency power supply frequency is 40kHz, the voltage is 350V, and the deposition time is 10min.

Wherein, in the step (9), the argon flow is 100sccm, the substrate bias is-130V, the silver target current is 20A, the voltage is 300V, and the deposition time is 25min.

Wherein, in the step (10), the argon flow is 100sccm, the substrate bias voltage is-60V, the carbon target current is 15A, the voltage is 250V, and the deposition time is 60min.

Example 3

(3) The glow cleaning comprises the steps of vacuumizing a reaction cavity to 10 ^-3 Pa, heating the reaction cavity to 370 ℃, introducing argon gas into the reaction cavity, controlling flow, opening a substrate bias power supply, starting an ion source, and glow cleaning the substrate;

(6) Turning on a YF ₃ target radio frequency power supply, turning off a substrate bias power supply, reducing the temperature of a reaction cavity to 220 ℃, controlling the flow of argon, depositing a YF ₃ layer on the surface of a substrate, and turning off a YF ₃ target radio frequency power supply after the deposition is finished;

(8) Repeating steps (6) - (7) 7 times;

(9) Starting a silver target direct current power supply, raising the temperature of the reaction cavity to 380 ℃, starting a matrix bias power supply, controlling the flow of argon, setting a matrix bias, depositing an outer Ag layer, and closing the silver target direct current power supply after the deposition is finished;

Wherein, in the step (3), the argon flow is 90sccm, the substrate bias is-100V, and the cleaning time is 35min.

Wherein, in the step (4), the argon flow is 130sccm, the substrate bias is-90V, si ₃N₄, the target current is 35A, the radio frequency power supply frequency is 35kHz, the voltage is 300V, and the deposition time is 15min.

Wherein, in the step (5), the argon flow is 90sccm, the substrate bias is-110V, the silver target current is 18A, the voltage is 350V, and the deposition time is 30min.

Wherein, in the step (6), the argon flow is 110sccm, the YF ₃ target current is 25A, the radio frequency power supply frequency is 35kHz, the voltage is 350V, and the deposition time is 8min.

Wherein, in the step (7), the argon flow is 110sccm, the ZnS target current is 17A, the radio frequency power supply frequency is 36kHz, the voltage is 320V, and the deposition time is 8min.

Wherein, in the step (9), the argon flow is 90sccm, the substrate bias is-100V, the silver target current is 16A, the voltage is 270V, and the deposition time is 20min.

Wherein, in the step (10), the argon flow is 90sccm, the substrate bias is-55V, the carbon target current is 12A, the voltage is 230V, and the deposition time is 50min.

Comparative example 1

Comparative example 1 is the same as example 3 except that comparative example 1 is not subjected to step (8), i.e., no multilayer YF ₃/ZnS alternating layers are deposited, only YF ₃/ZnS bilayer is deposited.

Comparative example 2

Comparative example 2 is the same as example 3 except that comparative example 2 is not subjected to step (9), i.e., no external Ag layer is deposited.

Comparative example 3

Comparative example 3 is identical to example 3 except that comparative example 3 is not subjected to step (10), i.e., no GLC layer is deposited.

Comparative example 4

Comparative example 4 is the same as example 3 except that comparative example 4 does not perform steps (9), (10), i.e., neither an outer Ag layer nor a GLC layer is deposited.

The optical films prepared in the above examples and comparative examples were tested and characterized in terms of performance. The light transmittance of the samples was measured using a Lambda950 type ultraviolet/visible/near infrared spectrophotometer. The thickness of the optical film is measured by adopting a high-precision wavelength and incidence double-scanning ellipsometer test, nano hardness is measured by utilizing a nano hardness meter, scratch resistance (load 100g, speed 15 mm/s) is tested by adopting a steel wool friction resistance tester, and the scratch resistance is evaluated by recording the cycle number when obvious scratches appear. The sample was kept at 25 ℃ for 24 hours in an atmosphere of 50% rh, and then the surface resistance value thereof was measured using a surface resistance meter. Specific data are recorded in tables 1-2 below.

TABLE 1

TABLE 2

As shown in the test data of Table 2, the average transmittance of the optical film prepared by the invention is more than 87% in the range of 500-1200 nm, the optical film can still keep higher transmittance after scratch-resistant circulation, and has good antistatic property, and in addition, the whole optical film also has excellent scratch-resistant property and higher nano hardness based on the property of the GLC layer. The requirements of electronic components on optical performance can be met, the silver layer is kept to serve as a transparent electrode, and good hardness and wear resistance of the whole coating structure are provided.

Comparative example 1 only a YF ₃/ZnS bilayer was prepared, the average light transmittance of the optical film was significantly reduced compared to the YF ₃/ZnS alternating layers, while the surface resistance was slightly increased, which suggests that the YF ₃/ZnS alternating layers were more advantageous for light transmittance, but the antistatic properties were slightly reduced because the bilayer film thickness was smaller than the alternating layers to make the effect of the inner Ag layer more penetrable.

The average light transmittance of the optical film of comparative example 2 was slightly improved as compared with example 3, which is said that the outer Ag layer is disadvantageous for light transmittance properties.

The nano hardness and scratch cycle resistance of the optical films of comparative examples 3 and 4 are both significantly reduced, and the surface resistance is also increased to 10 ⁸ level, which indicates that the GLC layer has excellent mechanical properties, and simultaneously, based on good conductivity of GLC, it can improve the antistatic properties of the optical film of example 3 together with the external Ag layer. By comparing the comparative examples 3 and 4, the effect of the outer Ag layer and GLC layer on the light transmittance was also evident from the side.

The optical film prepared by the invention has excellent light transmittance and antistatic performance, has good hardness and wear resistance, and can obviously prolong the service life.

Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. The high-light-transmittance antistatic optical film is characterized by comprising a substrate, a SiN _x layer, an inner Ag layer/YF ₃/ZnS alternating layer, an outer Ag layer and a GLC layer, wherein the alternating layer number is 5-10, the thickness of the Si ₃N₄ layer is 10-40 nm, the thickness of the inner Ag layer is 40-70 nm, the thickness of the YF ₃ layer is 20-30 nm, the thickness of the ZnS layer is 25-35 nm, the thickness of the outer Ag layer is 10-20 nm and the thickness of the GLC layer is 40-60 nm.

2. The high light transmittance, antistatic optical film of claim 1 wherein the substrate is glass, quartz or a polymer.

3. The high light transmittance, antistatic optical film according to any one of claims 1 to 2, wherein the optical film has an average transmittance of more than 87% in the range of 500 to 1200nm and a nano hardness of 29 to 34gpa.

4. A method for producing the high light transmittance, antistatic optical film according to any one of claims 1 to 3, comprising the steps of:

① The substrate pretreatment, namely sequentially carrying out ultrasonic cleaning and drying on the substrate by absolute ethyl alcohol and deionized water for standby;

Fixing a matrix on a mounting frame of a multifunctional magnetron sputtering coating device, and fixing a Si ₃N₄ target, a silver target, a YF ₃ target, a ZnS target and a carbon target on a target position;

② The glow cleaning comprises the steps of vacuumizing a reaction cavity to 10 ^-3 Pa, heating the reaction cavity to 350-400 ℃, introducing argon gas into the reaction cavity, controlling flow, switching on a substrate bias power supply, switching on an ion source, and carrying out glow cleaning on a substrate;

③ Starting a Si ₃N₄ target radio frequency power supply, controlling argon flow, setting a substrate bias voltage, depositing a Si ₃N₄ layer on the surface of the substrate, and closing the Si ₃N₄ target radio frequency power supply after the deposition is finished;

④ Starting a silver target direct current power supply, controlling argon flow, setting a substrate bias voltage, depositing an inner Ag layer, and closing the silver target direct current power supply after the deposition is finished;

⑤ Turning on a YF ₃ target radio frequency power supply, turning off a substrate bias power supply, reducing the temperature of a reaction cavity to 200-240 ℃, controlling the flow of argon, depositing a YF ₃ layer on the surface of a substrate, and turning off a YF ₃ target radio frequency power supply after the deposition is finished;

⑥ Turning on a ZnS target radio frequency power supply, controlling the flow of argon, depositing a ZnS layer on the surface of the substrate, and turning off the ZnS target radio frequency power supply after the deposition is finished;

⑦ Repeating the steps (6) - (7) for 5-10 times;

⑧ Starting a silver target direct current power supply, raising the temperature of the reaction cavity to 350-400 ℃, starting a matrix bias power supply, controlling the flow of argon, setting a matrix bias, depositing an outer Ag layer, and closing the silver target direct current power supply after the deposition is finished;

⑨ Starting a carbon target direct current power supply, controlling argon flow, setting a substrate bias voltage, depositing a GLC layer, and closing the carbon target direct current power supply after the deposition is finished;

⑩ And (5) turning off the power supply, stopping introducing argon, opening the reaction cavity when the temperature is reduced to room temperature, and taking out the substrate.

5. The method according to claim 4, wherein the target in the step (2) is a high-purity target, and the purity is more than 99.9%; in the step (3), the argon flow is 80-100 sccm, the substrate bias is-90 to-120V, and the cleaning time is 30-40 min.

6. The method according to claim 4, wherein in the step (4), the argon flow is 120-150 sccm, the substrate bias is-80 to-100V, si ₃N₄, the target current is 30-40A, the radio frequency power supply frequency is 30-40 kHz, the voltage is 250-350V, and the deposition time is 10-20 min.

7. The method according to claim 4, wherein in the step (5), the argon flow is 80-100 sccm, the substrate bias is-90 to-130V, the silver target current is 15-20A, the voltage is 300-400V, and the deposition time is 25-35 min.

8. The preparation method of the high-density ceramic material according to claim 4, wherein in the step (6), the argon flow is 100-120 sccm, the YF ₃ target current is 20-30A, the radio frequency power supply frequency is 30-40 kHz, the voltage is 300-400V, the deposition time is 5-10 min, and in the step (7), the argon flow is 100-120 sccm, the ZnS target current is 15-20A, the radio frequency power supply frequency is 30-40 kHz, the voltage is 300-350V, and the deposition time is 5-10 min.

9. The method according to claim 4, wherein in the step (9), the argon flow is 80-100 sccm, the substrate bias is-90 to-130V, the silver target current is 15-20A, the voltage is 250-300V, and the deposition time is 15-25 min.

10. The method according to claim 4, wherein the argon flow is 80-100 sccm, the substrate bias is-50 to-60V, the carbon target current is 10-15A, the voltage is 200-250V, and the deposition time is 40-60 min in the step (10).