CN1285968C - Method of pattern transfer - Google Patents
Method of pattern transfer Download PDFInfo
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- CN1285968C CN1285968C CN 02124620 CN02124620A CN1285968C CN 1285968 C CN1285968 C CN 1285968C CN 02124620 CN02124620 CN 02124620 CN 02124620 A CN02124620 A CN 02124620A CN 1285968 C CN1285968 C CN 1285968C
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- Prior art keywords
- optical pattern
- pattern resistances
- resistances
- photoresist
- pattern
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- 238000000034 method Methods 0.000 title claims abstract description 67
- 238000012546 transfer Methods 0.000 title abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 37
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 36
- 238000005530 etching Methods 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 24
- 230000003287 optical effect Effects 0.000 claims description 115
- 238000012940 design transfer Methods 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 5
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 206010010144 Completed suicide Diseases 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 claims description 2
- 230000003321 amplification Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000009466 transformation Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000013036 cure process Methods 0.000 description 7
- 238000007630 basic procedure Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 208000034189 Sclerosis Diseases 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 238000002444 silanisation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
A pattern transfer method is to first harden the pattern photoresist after the pattern photoresist is formed on the substrate, and then transfer the pattern of the hardened pattern photoresist to the substrate. Here, the common hardening process is a silicidation process, and may harden only the top of the patterned photoresist, or may harden the top and sidewalls of the patterned photoresist. Furthermore, the height of the patterned photoresist may be changed and the critical dimension of the patterned photoresist may be reduced before the hardening process is performed. Obviously, since the etching resistance of the hardened photoresist pattern is greater than that of the photoresist material, the etching of the photoresist pattern in the pattern transfer process can be effectively reduced, thereby overcoming the problem of pattern distortion, and the problem that the critical dimension of the photoresist pattern is limited by the developing capability and cannot be further reduced when a thicker photoresist pattern is required to prevent the photoresist pattern from being exhausted by etching in the prior art.
Description
(1) technical field
The method of the relevant a kind of design transfer of the present invention.
(2) background technology
The basic procedure of design transfer program that uses little shadow program is shown in Figure 1A to Fig. 1 C, form photoresist layer 12 earlier on the pending layer 11 that is positioned on the ground 10, optical pattern resistances layer 12 and form optical pattern resistances 13 again, treat processing layer 11 then and carry out an etching program, use the extremely pending layer 11 of the design transfer of optical pattern resistances 13.Desirable situation is, optical pattern resistances 13 fully can be not etched the etching of program institute, or etched at least amount be less to can ignoring, and makes the pattern of optical pattern resistances 13 accurately to be transferred to pending layer 11 in ground.
Actual state is, the etched amount of optical pattern resistances 13 can not be ignored often, particularly when the thickness low LCL of optical pattern resistances 13 is thick or width when wide inadequately.At this moment, as the qualitative demonstration of Fig. 1 D institute, because optical pattern resistances 13 is by over etching and deformation, actual transfer to the pattern of pending layer 11 will be different with the pattern of the predetermined optical pattern resistances 13 that will shift.
The method of a head it off is the material that changes photoresist layer 12, increases the etching resistance of photoresist, uses and reduces the etched quantity that removes of photoresist.But because photoresist must have certain light sensation and tack etc., do like this and be not easy, the photoresist of particularly high etching resistance often also is the photoresist of costliness.
The method of another head it off is the thickness that increases optical pattern resistances 13, reduces the etched partly shared ratio that removes, and uses reducing or eliminating the etched influence that causes of photoresist.But because the analytic ability of little shadow program is limited, the depth-to-width ratio of making the photoresistance pattern that can form like this has certain lower limit, the thickness that increases optical pattern resistances 13 will increase the critical dimension of optical pattern resistances 13 unavoidablely, and then increases the critical dimension of the pattern that can be transferred to pending layer 11.Apparently, be easily a kind of and the practice cheaply though increase optical pattern resistances 13 thickness, also can increase the critical dimension that forms pattern, therefore can not be applicable to semiconductor and the related semiconductor processing procedure that needs fine pattern.
In sum, known techniques can not solve the etched caused disappearance of photoresist in the design transfer program effectively, particularly can not provide low-cost and be applicable to the solution of fine pattern.Therefore, be necessary to develop new technology and solve this problem.
(3) summary of the invention
A purpose of the present invention provides a kind of method that prevents to cause because of the etched distortion of photoresistance in the etching program design transfer of pattern distortion.
Another object of the present invention provides a kind of design transfer method that can form the semiconductor structure with fine pattern.
Another purpose of the present invention provides a kind of design transfer separating method, and the technology that can use existing sclerosis photoresist promotes the etching resistance of optical pattern resistances, use avoid changing photoresist or increase photoresistance thickness unavoidable difficulty.
Basic procedure of the present invention is as described below: after optical pattern resistances is formed on the ground, earlier optical pattern resistances is carried out a hardening process, then the design transfer of the optical pattern resistances of just cure process being crossed is to ground.At this, common hardening process is the silication program, and the top of the optical pattern resistances of can only hardening, the top and the sidewall of the optical pattern resistances of also can hardening.And, can before carry out hardening process, change the optical pattern resistances height earlier and dwindle optical pattern resistances critical dimension, use the variation of the pattern of payment optical pattern resistances that hardening process causes.
Fundamental mechanism of the present invention is as described below: because the etching resistance of the optical pattern resistances that cure process is crossed is greater than the etching resistance of optical pattern resistances material, therefore can reduce optical pattern resistances effectively in the suffered etching of design transfer program, and then improve the problem of pattern distortion, and to improve known techniques be to avoid etched the exhausting of photoresistance and essential when using thicker optical pattern resistances, and the critical dimension of optical pattern resistances is subject to development capability and the problem that can not further reduce.
For further specifying purpose of the present invention, design feature and effect, the present invention is described in detail below with reference to accompanying drawing.
(4) description of drawings
Figure 1A to Fig. 1 D shows basic procedure and a kind of common defective of the design transfer program of using little shadow program qualitatively;
Fig. 2 A to Fig. 2 J is cross sectional representation of basic step of a preferred embodiment of the present invention and the cross sectional representation that may change; And
Fig. 3 is the basic flow sheet of another preferred embodiment of the present invention.
(5) embodiment
When increasing the etching resistance of photoresistance with the change photoresist with increase photoresistance thickness respectively at known techniques, the many disadvantages that is met with, the present invention proposes following several point of penetration:
(1) as long as the etching resistance of certain material is enough big, just can be under the prerequisite of the thickness that does not increase this material, the damage that prevents etching effectively and caused.
(2) as long as the enough big material of etching resistance is arranged, can offset the effect of etching process, just can not change the material of photoresistance photoresistance on the photoresistance surface.
(3) because the design transfer program is to be arranged in the design transfer of the structure on the ground to ground, therefore can comprehensively use photoresistance and high etching resistance material to form structure, and not need only to use photoresistance as having the structure of specific pattern with specific pattern.
Comprehensive above-mentioned each point of penetration, the present invention proposes a kind of new design transfer method, does not also increase the mode of photoresistance thickness not change photoresist, prevents when photoresistance is etched damage to the design transfer program.
The method of a kind of design transfer of a preferred embodiment of the present invention, the method for for example a kind of formation linear structure (as polycrystalline silicon gate pole and or metal wire) shown in Fig. 2 A to Fig. 2 F, comprises following basic step at least:
Shown in Fig. 2 A, form photoresist layer 22 on ground 21.
Shown in Fig. 2 B, make optical pattern resistances layer 22 form first optical pattern resistances 23.Comprise a plurality of first light resistance structures in this first optical pattern resistances 23.
Shown in Fig. 2 C, like that, handle first optical pattern resistances 23 and form second optical pattern resistances 24 with hardening process.In the etching resistance of this second optical pattern resistances of crossing through cure process 24 etching resistance greater than first optical pattern resistances of not crossed by cure process 23.
Certainly, because hardening process may make the pattern of second optical pattern resistances 24 crossed through cure process inequality with the pattern of first optical pattern resistances of not crossed by cure process 23.Therefore can be shown in Fig. 2 D and Fig. 2 E like that, before carrying out hardening process, handle earlier first optical pattern resistances 23 to change its thickness and critical dimension (being illustrated as correction first optical pattern resistances 235), use the influence of hardening process that payment carries out subsequently the pattern of first optical pattern resistances 23.Certainly, only manage Fig. 2 D and Fig. 2 E shown be thickness and the width (or saying critical dimension) that reduces earlier by first optical pattern resistances, uses and offset the thickness that hardening process increased and the example of width, but present embodiment is not limited to this.If hardening process can reduce thickness and width, present embodiment also can increase the thickness and the width (or saying critical dimension) of first optical pattern resistances 23 earlier.
Apparently, present embodiment can change the thickness and the width (or saying critical dimension) of first optical pattern resistances 23 with dry ecthing or wet etching, but present embodiment does not limit or be subject to thickness and the width (or saying critical dimension) that how to change first optical pattern resistances 23.
Shown in Fig. 2 F, like that, use cure process to cross second optical pattern resistances 24 and come patterning ground 21.
By comparing Figure 1A to Fig. 1 C and Fig. 2 A to Fig. 2 F, the main difference of obvious present embodiment as can be seen and known techniques is the step shown in Fig. 2 C and Fig. 2 E.
Fig. 2 C shows the material that does not change photoresistance, but after optical pattern resistances formed, the material that utilizes hardening process to change optical pattern resistances became high etching resistance material, will transfer to ground by the pattern of high etching resistance structure that material forms again.And Fig. 2 D demonstration causes pattern deformation for fear of high etching resistance material, can form the actual pattern optical pattern resistances different with required pattern earlier, forms high etching resistance material again, uses the caused change in pattern of the high etching resistance material of payment.
It must be emphasized that since to do etching program in the branching program be not uniformly to the damage of optical pattern resistances usually or wait to, not only concentrate on the surface and also concentrate on bottom (using anisotropic etching) more because of design transfer.Therefore the etching process infringement surface of big (or saying that the etching amount of removing is big especially) is especially particularly only handled on the hardening process surface that can only handle first optical pattern resistances 23.In other words, can have only the top of second optical pattern resistances 24 to be hardened, can have only the sidewall of second optical pattern resistances 24 to be hardened, top and sidewall that can second optical pattern resistances 24 be all hardened, also can whole second optical pattern resistances 24 all be hardened, or, use formation by first optical pattern resistances 23 and the two second optical pattern resistances 24 of forming of supplementary structure by forming supplementary structure on first optical pattern resistances, 23 surfaces.
This preferred embodiment does not limit the details of hardening process, as long as can form etching resistance second optical pattern resistances 24 big than first optical pattern resistances 23.For instance, shown in Fig. 2 G, hardening process can be with ultraviolet ray 25 irradiations first optical pattern resistances 23, uses forming second optical pattern resistances 24.Again for example, along with the development of the silication program (silylationprocess) of the photoresistance that can harden in recent years (the photoresistance surface of hardening at least), hardening process also can be the silication program that can form a plurality of disilicide layers.
At this, because different etching programs are removed problem to the caused photoresistance of different pattern photoresistance, the amount of being removed that may be the optical pattern resistances top is many to making optical pattern resistances depleted in etching process, also may be that the optical pattern resistances sidewall amount of being removed is many to making optical pattern resistances that pattern deformation take place in etching process.Therefore, as Fig. 2 H to Fig. 2 J institute shows qualitatively, present embodiment can be when first optical pattern resistances, 23 very thin thickness (in order to form fine pattern under the development limit), allow disilicide layer 26 be positioned at the top of first optical pattern resistances 23, use and avoid in the pattern transfer processes second optical pattern resistances 24 depleted; When present embodiment is also can be at the width of the first pattern optical pattern resistances 23 very little (that is having meticulous pattern), allow disilicide layer 26 be positioned at the sidewall of first optical pattern resistances 23, use the pattern deformation of avoiding second optical pattern resistances 24 in the pattern transfer processes; Certainly, present embodiment also can allow disilicide layer 26 be positioned at the top and the sidewall of first optical pattern resistances 23 simultaneously, uses and guarantees in pattern transfer processes, reduces the profile varying of second optical pattern resistances 24 as far as possible.
Generally speaking, the silication temperature of disilicide layer 26 is the glass transformation temperatures that are lower than the material of first optical pattern resistances 23, use and avoid in the forming process of silicide layer 26, because temperature is high to be fluid to the material transition that makes the optical pattern resistances 23 of winning, and makes the pattern of whole optical pattern resistances 23/24 change.
The possible method that forms disilicide layer 26 is not only a kind of.For instance, but when the material of first optical pattern resistances 23 is suicide material, can be with directly forming second optical pattern resistances 24 with irradiate light first optical pattern resistances 23.Again for example, can be to cover the silicification reaction agent earlier on the surface of first optical pattern resistances 23, inspire the reaction of the silicification reaction agent and first optical pattern resistances 23 again by modes such as heating, to form second optical pattern resistances 24.At this, the possible material of first optical pattern resistances 23 has chemical amplification photoresist, resin-based photoresist and poly-phenolic group photoresist at least, and possible silicification reaction agent has TMDS, HMDS, ATMS, DMSDMA and silane at least.
Certainly, because present embodiment is just used the problem that the silication program solves the etched distortion of photoresistance in the pattern transfer processes, do not need to explain in detail the details of known silication program at this.For instance, following several references have disclosed the essential information of silication program: U.S.Patent No.5,427,649, U.S.Patent No.6,100,014, U.S.Patent No.6,271,072 B1 and SPIE Vol.771 Advances in Resist Technology and Processing IV (1987) pp.111-117.Again for example, following several references have disclosed the essential information that use HMDS carries out silanization (silylation): U.S.Patent No.6,235,448, U.S.PatentNo.6,168,907, U.S.Patent No.6,156,668, U.S.Patent No.5,935,732, U.S.Patent No.5,838,621, U.S.Patent No.5,320,934, U.S.Patent No.5,142,043 and U.S.Patent No.4,445,572.
Another preferred embodiment of the present invention is a kind of method of design transfer, for example a kind of method that forms contact hole.The method can obtain contact hole littler under the more original conditions of exposure, so can reduce the restriction of light shield manufacture difficulty and conditions of exposure, increases the process volume (process window) of micro-photographing process.
As shown in Figure 3, comprise following basic step at least:
As prepare shown in the square 31, form silicon oxynitride layer and photoresist layer in regular turn on ground.
As form shown in the pattern square 32 optical pattern resistances layer and form first optical pattern resistances that comprises a plurality of first light resistance structures.
As handle shown in the square 33, handle first optical pattern resistances and form second optical pattern resistances that comprises a plurality of second light resistance structures.Pattern in this second optical pattern resistances is similar to the pattern of first optical pattern resistances, but the thickness of second optical pattern resistances is less than the thickness of first optical pattern resistances, and the critical dimension of second optical pattern resistances also can be less than the critical dimension of first optical pattern resistances.
Shown in silication square 34,, use at the top of these second light resistance structures (even sidewall) and form a plurality of disilicide layers with silication routine processes second optical pattern resistances.At this, the etching resistance of disilicide layer is greater than the etching resistance of second optical pattern resistances, and the critical dimension of second optical pattern resistances that treated routine processes is crossed is usually less than the critical dimension of first optical pattern resistances.
As shift shown in the square 35, using the disilicide layer and second optical pattern resistances is the cover curtain, and with design transfer of this cover act to ground.
As repair shown in the square 36, remove disilicide layer, second optical pattern resistances and silicon oxynitride layer.
Certainly, those of ordinary skill in the art will be appreciated that, above embodiment is used for illustrating the present invention, and be not to be used as limitation of the invention, as long as in connotation scope of the present invention, all will drop in the scope of claims of the present invention variation, the modification of the above embodiment.
Claims (9)
1. the method for a design transfer is characterized in that, comprising:
Form a photoresist layer on a ground;
This photoresist layer of patterning and form one first optical pattern resistances, this first optical pattern resistances comprises a plurality of light resistance structures:
Handle thickness and the width of this first optical pattern resistances to reduce arbitrary this light resistance structure;
Handle this first optical pattern resistances and form one second optical pattern resistances with a hardening process, in the etching resistance of this this second optical pattern resistances etching resistance greater than this first optical pattern resistances; With
Use this this ground of second optical pattern resistances patterning.
2. the method for design transfer as claimed in claim 1 is characterized in that, also comprises using an etching program to handle this first optical pattern resistances, uses the thickness and the width that change those light resistance structures.
3. the method for design transfer as claimed in claim 1 is characterized in that, this hardening process is to form this second optical pattern resistances by forming a supplementary structure on this first optical pattern resistances surface, using.
4. the method for design transfer as claimed in claim 1 is characterized in that, this hardening process is to shine this first optical pattern resistances with ultraviolet ray.
5. the method for design transfer as claimed in claim 1 is characterized in that, this hardening process is to be a silication program, and this silication program forms top and the sidewall of a plurality of disilicide layers in this first optical pattern resistances.
6. the method for design transfer as claimed in claim 5 is characterized in that, the silication temperature of described disilicide layer is the glass transformation temperature that is lower than the material of this first optical pattern resistances.
7. design transfer method as claimed in claim 6 is characterized in that, but this silication program is when the material of this first optical pattern resistances is suicide material, with this first optical pattern resistances of irradiate light.
8. the method for design transfer as claimed in claim 7 is characterized in that, the material of this first optical pattern resistances is to adopt one of chemical amplification photoresist, resin-based photoresist and poly-phenolic group photoresist.
9. the method for design transfer as claimed in claim 5 is characterized in that, the employed silicification reaction agent of this silication program is one of TMDS, HMDS, ATMS, DMSDMA and silane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02124620 CN1285968C (en) | 2002-06-14 | 2002-06-14 | Method of pattern transfer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02124620 CN1285968C (en) | 2002-06-14 | 2002-06-14 | Method of pattern transfer |
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| Publication Number | Publication Date |
|---|---|
| CN1464341A CN1464341A (en) | 2003-12-31 |
| CN1285968C true CN1285968C (en) | 2006-11-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02124620 Expired - Lifetime CN1285968C (en) | 2002-06-14 | 2002-06-14 | Method of pattern transfer |
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| Country | Link |
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| CN (1) | CN1285968C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6893975B1 (en) * | 2004-03-31 | 2005-05-17 | Tokyo Electron Limited | System and method for etching a mask |
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2002
- 2002-06-14 CN CN 02124620 patent/CN1285968C/en not_active Expired - Lifetime
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| CN1464341A (en) | 2003-12-31 |
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Effective date of registration: 20180102 Address after: No. 88 Lianhua Avenue, Jinjiang City, Quanzhou, Fujian Patentee after: Fujian Jincheng integrated circuit Co., Ltd. Address before: No. three, Lixing Road, Hsinchu City, Hsinchu, Taiwan, China Patentee before: United Microelectronics Corporation |
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