CN1282285C - Back cooling type high power semiconductor laser micro-channel heat sink structure and preparing method thereof - Google Patents

Abstract

The invention relates to a micro-channel heat sink structure of a back-cooled high-power semiconductor laser, which includes: a micro-channel part 1 and a water inlet and outlet base 2 . The method is to process the microchannel frame with a high thermal conductivity metal material, the microchannel embryo body composed of a semi-cylindrical groove and a microchannel area, use a high thermal conductivity metal material to prepare the water inlet and outlet base, including the interconnected pipes and small channel areas, and make the microchannel embryo Body, microchannel frame and water inlet and outlet base assembly. The side wall of the microchannel of the present invention and the top wall of the microchannel are an integrated structure, which avoids the additional thermal resistance introduced when the layered structure is connected in the background technology and improves the overall heat dissipation capacity of the device; Cutting into the microchannel area in an arc shape greatly reduces the local pressure drop of the water flow and improves the overall performance of the heat sink. The probability of damage to the microchannel structure is reduced, and the process difficulty and production cost are simplified.

Description

Micro-channel heat sink structure and preparation method of back-cooled high-power semiconductor laser

a technical field

The invention belongs to the technical field of semiconductor optoelectronics, and relates to a novel back-cooled high-power semiconductor laser microchannel heat sink structure and a preparation method thereof.

Two background technology

At present, micro-channel heat sinks for high-power semiconductor lasers generally use five layers of high thermal conductivity rectangular sheet materials with different internal structures to form a structure of micro-channel heat sinks. This structure requires precise processing of five layers of highly thermally conductive rectangular sheet materials, and then uses diffusion welding technology to accurately and tightly bond them together. This structure introduces additional thermal resistance due to the combination of the microchannel side wall (radiating fin) and the microchannel top wall (heat transfer layer) through welding technology, which greatly increases the overall thermal resistance of the structure; each time the water flow direction in the structure The 90° turning adopts a right-angle structure, which increases the pressure drop of the water flow through the microchannel heat sink and reduces the performance of the device. During the assembly process of the entire structure, four microchannel walls are involved in the welding process, which greatly damages the microchannel structure and reduces the performance of the microchannel. At the same time, it increases the difficulty and production cost of the high-power semiconductor laser microchannel heat sink assembly.

Three invention content

In order to solve the background technology, because the microchannel side wall (radiating fin) and the microchannel top wall (heat transfer layer) are combined by welding technology to introduce additional thermal resistance; the right angle corner of the microchannel increases the pressure drop of the water flow correspondingly The overall performance of the device decreases and the technical problem of destroying the microchannel structure during the welding process. Therefore, the present invention provides a back-cooled high-power semiconductor laser microchannel heat sink structure and its preparation method in order to reduce the production of high-power semiconductor laser microchannel heat sink. Improve the overall performance of the device while reducing the difficulty and production cost.

如图1，通孔外边缘距离微通道胚体边界为v；B.把步骤A的胚体等分切割成两部分，每部分尺寸为 然后使用其中一部分如图2；C.在步骤B的切割面向胚体内按所需尺寸垂直切割出所需数量、深度为

的微沟道，微沟道方向与微通道胚体的x边平行如图3；D.再选取与步骤A相同的高导热金属材料加工出尺寸分别为 和

的金属薄片各两片；E.再选取高导热金属材料加工成尺寸为(x+w)×(y+w)×u的底座胚体；F.由步骤E中的(x+w)×u面垂直向底座胚体内部打出进水孔和出水孔，进水孔和出水孔的孔径为R2且R2＞R1，进水孔和出水孔孔深小于y+w如图4和图5；G、由步骤F中(x+w)×(y+w)面垂直向底座胚体内部打入直径为R1的孔构成小通道区，使孔与步骤F中进水孔和出水孔分别相通如图6和图7；H、将步骤C、D、G的表面抛光清洗干净并焊接在一起如图8和图9，从而完成背冷式高功率半导体激光器列阵微通道热沉的制作。In order to achieve the above object, the technical steps taken by the present invention are: as shown in Figures 1, 2, 3, 4, 5, 6, 7, 8, and 9, A.. firstly choose a high thermal conductivity metal material and process it into a size of x × y×z microchannel embryo body and two through holes with a diameter of R1 are processed on the embryo body, and the coordinates of the center of the through hole on the x×z rectangular section of the microchannel embryo body are respectively and

As shown in Figure 1, the distance from the outer edge of the through hole to the boundary of the microchannel embryo body is v; B. the embryo body in step A is equally divided into two parts, and the size of each part is Then use a part thereof as shown in Figure 2;

The direction of the microchannel is parallel to the x side of the microchannel embryo body as shown in Figure 3; D. Then select the same high thermal conductivity metal material as in step A to process the dimensions of and

Two metal sheets each; E. Select high thermal conductivity metal material and process it into a base body whose size is (x+w)×(y+w)×u; F. From (x+w)×u in step E Drill the water inlet and water outlet holes vertically to the inside of the base embryo body on the u surface. The diameter of the water inlet and water outlet holes is R2 and R2>R1. The depth of the water inlet and water outlet holes is less than y+w, as shown in Figure 4 and Figure 5; G. From the (x+w)×(y+w) plane in step F, punch a hole with a diameter of R1 vertically into the base embryo body to form a small channel area, so that the hole communicates with the water inlet hole and the water outlet hole in step F respectively As shown in Fig. 6 and Fig. 7; H, the surfaces of steps C, D and G are cleaned and welded together as shown in Fig. 8 and Fig. 9, thereby completing the fabrication of the back-cooled high-power semiconductor laser array microchannel heat sink.

The micro-channel heat sink structure of the back-cooled high-power semiconductor laser of the present invention includes: the micro-channel part and the water inlet and outlet base as shown in Fig. 8 . The microchannel part includes: microchannel region, semi-cylindrical groove and microchannel frame as shown in Fig. 3 and Fig. 9 . The water inlet and outlet base includes: water inlet pipe, water outlet pipe, water inlet small channel area, and water outlet small channel area as shown in Figure 6 and Figure 7; the heat sink structure is characterized in that the microchannel part is located directly above the water inlet and outlet base, and the microchannel part The surface containing the micro channel area and the semi-cylindrical groove in the water inlet and outlet base is closely connected with the surface of the small water inlet channel area and the small water outlet channel area; the microchannel frame is located around the micro channel area and the semi-cylindrical groove, The water inlet pipe, the water inlet small channel area, the micro channel area, the semi-cylindrical groove, the water outlet small channel area, and the water outlet pipe are connected vertically with each other in turn to form a water flow route; the depth of the micro channel area is consistent with the depth of the semi-cylindrical groove, so that The water flow turns 90° through the arc of the semi-cylindrical groove and cuts into the microchannel area.

When the present invention works: the cooling water enters from the water inlet pipe, flows through the small water inlet channel area, the first semi-cylindrical groove, the microchannel area, the second semi-cylindrical groove, the water outlet small channel area, and finally flows through the small water channel area. The outlet pipe is flowing out.

Compared with the traditional structure and manufacturing method, the present invention has the following advantages: (1). The side wall of the microchannel, that is, the heat dissipation fins, and the top wall of the microchannel, that is, the thermal load layer, are an integrated structure, which avoids the connection of the layered structure in the background technology. The additional thermal resistance introduced has improved the overall heat dissipation capacity of the device; (2). When the present invention enters the microchannel area with a 90° turning of the water flow, it cuts into the microchannel area in an arc shape, which greatly reduces the local pressure drop of the water flow and improves the The overall performance of the heat sink; (3) During the connection process of the overall structure of the heat sink, there is only one micro-channel bottom surface for welding involving the micro-channel area of the heat sink, which greatly reduces the probability of damage to the micro-channel structure, and simplifies the process difficulty and production cost.

Four drawings

Fig. 1 is the schematic diagram of the microchannel embryo body that processes through hole in the present invention

Fig. 2 is the schematic diagram of the microchannel embryo body processed out of the semi-cylindrical groove in the present invention

Fig. 3 is the partial schematic view of the microchannel without frame in the present invention

Fig. 4 is a schematic diagram (front view) of the base embryo body processed with water inlet and outlet pipes in the present invention

Figure 5 is a top view of Figure 4

Fig. 6 is a schematic view of the water inlet and outlet base in the present invention (front view)

Figure 7 is a top view of Figure 6

Fig. 8 is a schematic diagram of the overall structure of the present invention (front view, internal dotted line not drawn)

Figure 9 is a top view of Figure 8

Five specific implementation methods

Describe the present invention in detail below in conjunction with accompanying drawing and specific embodiment, but the present invention is not limited to these embodiments:

Embodiment 1: The structure of the present invention is shown in Figures 3, 6, 7, 8 and 9, including a microchannel part 1 and a water inlet base 2. Microchannel part 1 includes: microchannel area 3, semi-cylindrical groove 4, microchannel frame 5; water inlet base 2 includes: water inlet pipe 6, water outlet pipe 7, water inlet small channel area 8, water outlet small channel area 9 . The microchannel part 1 and the water inlet base 2 are made of oxygen-free copper or CuW alloy or aluminum.

Embodiment 2: the preparation method of the present invention is as shown in Figures 1, 2, 3, 4, 5, 6, 7, 8, and 9:

A. The metal material with high thermal conductivity is made of oxygen-free copper or CuW alloy or aluminum, and the oxygen-free copper or CuW alloy or aluminum is cut, polished and cleaned as required to obtain an oxygen-free tube with a volume of 16.0×15.5×6.0mm ³ Copper or CuW alloy, aluminum and other microchannel blanks, and then process two through holes with a diameter R1 of 2mm on the blank, and the coordinates of the center of the hole on the 16.0× ^6.0mm2 rectangular section in the microchannel blank are respectively (2.0 mm, 3.0mm) and (14.0mm, 3.0mm) (as shown in Figure 1).

B. Cut step A into two parts, each part is 16.0×15.5×3.0mm ³ and then take one of them (as shown in Figure 2).

C. Use a precision wire cutting machine to cut vertically from the cutting surface of step B to the inside of step B, and cut out 23 parallel micro-channels according to the required size. The size of the micro-channel is 16.0×0.3×1mm, and the direction of the micro-channel is the same The sides of the microchannel embryo body whose length is x are parallel, the channel wall thickness is 0.3 mm, and the distance between the two border channels and the edge of the embryo body is 1 mm (as shown in Figure 3).

D. Select the same material as in step A and cut, polish, and clean as required to obtain two metal sheets with volumes of 16.0×3.0×1.0mm ³ and 17.5×3.0×1.0mm ³ respectively.

E. Then select a high thermal conductivity metal material, such as oxygen-free copper or CuW alloy or aluminum and other materials. Materials such as oxygen-free copper or CuW alloy or aluminum are cut, polished and cleaned as required to obtain a base body with a volume of 18.0×17.5×7.0mm ³ .

F. Process two round holes with a depth of 13.5mm and a diameter of 3mm vertically from the 18.0×7.0mm ² surface in step E to the body, and the hole center coordinates are (3.0mm, 3.5mm) and (15.0mm, 3.5mm), as shown in Figure 4, 5.

G. Drill 4 holes vertically from ^{the 2} sides of 18.0×17.5mm in step F to the inside of the rectangle. , 5.0mm) and (15.0mm, 12.5mm) (as shown in Figure 6, 7)

H. Weld steps C, D, and G together as shown in (8, 9) by diffusion welding technology to produce a back-cooled high-power semiconductor laser microchannel heat sink.

Claims (2)

1, back cooling type high-power semiconductor laser micro-channel heat sink structure preparation method, its preparation process is as follows:

A. at first choose high-thermal conductive metal materials processing and become to be of a size of the microchannel idiosome of x * y * z and to process two apertures on idiosome the through hole that is R1, the hole heart of through hole coordinate on x * z square-section in the idiosome of microchannel is respectively With

The through hole outward flange is v apart from idiosome border, microchannel; B. the idiosome of steps A is cut in parts two parts, every portion size is

Use a wherein part then; C. the cut surface of step B to the idiosome inside of step B by the required size perpendicular cuts go out requirement, the degree of depth is

Little raceway groove, little channel direction is parallel with the x limit of microchannel idiosome; D. choosing the high-thermal conductive metal materials processing identical with steps A again goes out size and is respectively With

Each two of sheet metals; E. choose the base idiosome that high-thermal conductive metal materials processing becomes to be of a size of (x+w) * (y+w) * u again; F. vertically get inlet opening and apopore to base idiosome inside by (the x+w) * u face in the step e, the aperture of inlet opening and apopore is R2 and R2＞R1, and inlet opening and apopore hole depth are less than y+w; G, vertically to squeeze into diameter to base idiosome inside by (x+w) * (y+w) face in the step F be that the hole of R1 constitutes the passage aisle district, makes that inlet opening and apopore communicate respectively in hole and the step F; H, the surface finish of step C, D, G is cleaned up and weld together, thereby finish the making of back cooling type high-power semiconductor laser array micro-channel heat sink.

2, back cooling type high-power semiconductor laser micro-channel heat sink structure, comprise: microchannel part (1) and Inlet and outlet water base (2) is characterized in that: wherein microchannel part (1) comprising: little channel region (3), semicircle column type groove (4) and microchannel frame (5); Inlet and outlet water base (2) comprises again: inlet channel (6), outlet conduit (7), water inlet passage aisle district (8), water outlet passage aisle district (9); Microchannel part (1) be positioned at Inlet and outlet water base (2) directly over, exposing in the face that contains little channel region (3) and semicircle column type groove (4) in microchannel part (1) and the Inlet and outlet water base (2), the face of water passage aisle district (8) and water outlet passage aisle district (9) closely is connected; Fixedly connected formation microchannel part (1) around microchannel frame (5) and little channel region (3) and the semicircle column type groove (4), inlet channel (6), water inlet passage aisle district (8), little channel region (3), semicircle column type groove (4), water outlet passage aisle district (9), outlet conduit (7) successively mutually vertical connection constitute the current route; The degree of depth of little channel region (3) is consistent with semi-cylindrical groove (4) degree of depth, and the circular arc that makes current pass through semi-cylindrical groove (4) is turned back 90 ° and cut little channel region (3).

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