CN1276541A - Topcoating composition and method for forming fine pattern using said composition - Google Patents
Topcoating composition and method for forming fine pattern using said composition Download PDFInfo
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- CN1276541A CN1276541A CN00109361A CN00109361A CN1276541A CN 1276541 A CN1276541 A CN 1276541A CN 00109361 A CN00109361 A CN 00109361A CN 00109361 A CN00109361 A CN 00109361A CN 1276541 A CN1276541 A CN 1276541A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- H10P76/00—
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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Abstract
本发明涉及一种防止胺污染的顶部涂层组合物及一种使用所述组合物形成精细图案的方法。优选地,本发明的防止胺污染的顶部涂层组合物包括一种防止胺污染的化合物。本发明的防止胺污染的顶部涂层组合物减少或避免了由于曝光后延迟效应所引起的T形顶部涂层问题及与传统的平版印刷工艺有关的酸扩散所造成的难以形成低于100nm的精细图案的问题。The present invention relates to a topcoat composition for preventing amine contamination and a method of forming a fine pattern using the composition. Preferably, the amine fouling preventing topcoat composition of the present invention includes an amine fouling preventing compound. The amine contamination-preventing topcoat composition of the present invention reduces or avoids the T-shaped topcoat problem caused by post-exposure retardation effects and the difficulty in forming sub-100nm particles due to acid diffusion associated with conventional lithographic processes. Problems with fine patterns.
Description
The present invention relates to a kind of Topcoating composition and a kind of method of using said composition to form fine pattern, described composition and method are used for the photoetching process of semiconductor device autofrettage.Especially, the present invention relates to a kind of method that is used to prevent the Topcoating composition that amine pollutes and uses said composition formation fine pattern, described composition is applicable to use to have and is lower than the photoetching process that the ultrashort light source of 250nm forms the ultra micro pattern.
Recently, chemical amplifying type DUV photoresist has been studied so that reach high light sensitivity in the precise image formation technology of preparation semiconductor device.This photoresist is by a kind of light acid propellant and the matrix resin polymkeric substance fusion with acid instability group are prepared.
According to the reaction mechanism of this photoresist (being sometimes referred to as " PR "), when light acid propellant during by a light source irradiation, this light acid propellant produces acid, and the acid reaction of the main chain of described resin or side chain and generation and be decomposed or crosslinked.The change in polarity of described resin causes the dissolubility difference through between exposed portion and unexposed portion in developer solution, thereby forms the pattern that is predetermined.
In lithography process, resolution is decided on the wavelength of light source, and wavelength is short more, can form meticulous more pattern.
Studied recently to use and had the imprint lithography technology that wavelength is lower than the light source of 250nm.As a kind of suitable photoresist polymkeric substance, people are very interested to be the polymkeric substance that has the alicyclic ring derivant on main chain and side chain.Yet, these alicyclic ring polymkeric substance are used for semiconductor making method have many shortcomings.For example, since the acid through exposing and producing, the necessary chemical property that changes described alicyclic ring polymkeric substance.In addition, during exposure and postexposure bake (" exposure back late effect "), the acid that is produced can be neutralized by the environment amines.Therefore, required sharpness possibly can't obtain or pattern may have T-shape (T-shape) (" T-pushes up (T-topping) ").When the concentration of environment amine surpassed 30ppb, this problem was especially serious, and caused pattern-free to form.
In order to overcome aforesaid shortcoming, advised following method in the prior art:
(1) a kind of method for annealing, wherein after applying PR, with the PR resin be higher than baking its glass transition temperature (Tg) under [referring to W.D.Hinsberg, S.A.MacDonald, N.J.Clecak, C.D.Snyder reaches H.Ito, Proc.SPIE, 1925, (1993) 43; H.Ito, W.P.England, R.Sooriyakumaran, N.J.Clecak, G.Breyta, W.D.Hinsberg, H.Lee, and D.Y.Yoon, photopolymer Science and Technology (J.Photopolymer Sci.and Technol.), 6, (1993) 547; G.Breyta, D.C.Hofer, H.Ito, D.Seeger, K.Petrillo, H.Moritz, and T.Fischer, photopolymer Science and Technology, 7, (1994) 449; H.Ito, G.Breyta, D.Hofer, R.Sooriyakumaran, K.Petrillo, and D.Seeger, photopolymer Science and Technology, 7, (1994) 433; H.Ito, G.Breyta, R.Sooriyakumaran, and D.Hofer, photopolymer Science and Technology, 8, (1995) 505];
(2) add amines to PR [referring to Y.Kawai, A.Otaka, J.Nakamura, A.Tanaka, and T.Matsuda, photopolymer Science and Technology, 8, (1995) 535; S.Saito, N.Kihara, T.Naito, M.Nakase, T.Nakasugi, and Y.Kat. photopolymer Science and Technology, 9, (1996) 677; S.Funato, Y.Kinoshita, T.Kuto, S.Masuda, H.Okazaki, M.Padmanaban, K.J.Przybilla, N.Suehiro, and G.Pawlowski, photopolymer Science and Technology, 8, (1995) 543];
(3) behind PR coating step and baking procedure, form on the top of PR a Topcoating with avoid PR be subjected to environment amine pollute [referring to J.Nakamura, H.Ban, Y.Kawai, and A.Tanaka, photopolymer Science and Technology, 8, (1995) 555; A.Oikawa, Y.Hatakenaka, Y.Ikeda, Y.Kokubo, S.Miyata, N.Santoh, and N.Abe, photopolymer Science and Technology, 8, (1995) 519].
Yet above-mentioned classic method also has many shortcomings, as the complicacy of technology.In fact use said method to be difficult to form superfine pattern.
Therefore, an object of the present invention is to provide a kind of a kind of Topcoating composition that prevents the compound that amine pollutes that comprises, said composition can solve the above problems.
In addition, another object of the present invention provides a kind of method of using described Topcoating composition to form the photoresist pattern.
Fig. 1 and Fig. 2 are for showing the SEM photo of traditional photoresist pattern; And
Fig. 3 to 7 is for showing the SEM photo of the photoresist pattern of a preferred embodiment according to the present invention.
For achieving the above object, the invention provides a kind of a kind of Topcoating material and a kind of that comprises Prevent the Topcoating composition that prevents the amine pollution of the compound that amine pollutes, described compound tool Alkalescence or alkalescent (that is, a kind of alkali compounds) are arranged. The present invention also provides a kind of use institute State the method that the Topcoating composition forms fine pattern.
The general technical staff in any this area is known commercially availablely to be coated with for the top The material of layer semiconductor device all can be used for the present invention. The example of these materials is by Japan " NFC 540 " that Synthetic Rubber sells, and by Clariant, Inc. sells " Aquatar ".
The compound that prevents that amine from polluting of the present invention is a kind of alkalescence or alkaline compound, is preferably a kind of water soluble compound, comprises ring-like or does not have ring-like nitrogen-containing compound.Being used for representative nitrogen-containing compound of the present invention is amine derivative (comprising amino acid derivativges), amide derivatives, the urethane compounds that comprises urea and its esters.The mole % scope that prevents the compound that amine pollutes with respect to water is preferably 0.001～0.1 mole of %, and more preferably 0.005～0.05 mole of % most preferably is 0.007～0.03 mole of %.
In the preferred case, the conjugate acid of described alkali compounds (that is, protonated form) has pKa value about 13 or still less, is preferably about 11 or still less, more preferably about 9 or still less, most preferably is about 7 or still less.
In a special specific embodiment, prevent that the compound that amine pollutes from being compound of Formula I:
Each R wherein
1, R
2And R
3Be H or C independently of one another
1-C
20Alkyl.Alkyl of the present invention is an aliphatic hydrocarbon, and it can be the straight or branched group.Have to the alkyl washability one or more substituting groups, as halogen, thiazolinyl, alkynyl, aryl, hydroxyl, amino, sulfenyl, alkoxy, carboxyl, oxygen base or naphthenic base.Can at random insert one or more oxygen, sulphur, replacement or unsubstituted nitrogen-atoms along described alkyl.Preferred alkyl comprise contain one or several hydroxyls, amino and/or carbonyl (as ketone, carboxylic acid, and ester) alkyl that is unsubstituted of group and the alkyl that is substituted, that is, and straight or branched C
1-C
20Alkyl, straight or branched C
1-C
20Alcohol (OH), straight or branched C
1-C
20Carboxylic acid, straight or branched C
1-C
20Amine, straight or branched C
1-C
20Ketone, or straight or branched C
1-C
20Ester.
In one aspect of the invention, the described compound that prevents that amine from polluting comprises amino acid, and particularly the L-proline (promptly, formula II compound), tetramethyl ammonium hydroxide pentahydrate (that is formula III compound), triethanolamine (that is formula IV compound) and composition thereof.Under the preferred situation, the described compound that prevents that amine from polluting comprises triethanolamine.
The inventor finds, when the top coating step uses the Topcoating composition that prevents that amine from polluting of the present invention to carry out, can form and has good sectional view superfine pattern.Be not subjected to the restriction of any theory, believe that the Topcoating composition that prevents that amine from polluting of the present invention postponed during (after this, being called " PED ") after exposure, can prevent effectively that environment amine from polluting, and prevent to be diffused into unexposed area by the acid that exposure is produced.In other words, when the compound that prevents that amine from polluting of the present invention was added in traditional Topcoating composition, the Topcoating composition that prevents the amine pollution that is generated had suitable alkalescence and is polluted by the environment amines to prevent the acid that produces when exposing as a kind of buffering agent.In addition, the Topcoating composition that prevents that amine from polluting of the present invention is applied to the top of PR coating.Believe to be contained in of the present inventionly to prevent that the compound that amine pollutes that prevents in the Topcoating composition that amine pollutes from limit sour diffusion at the PR coating surface, so the better pattern with upright sectional view is provided.
For a person skilled in the art, behind research the following example, can find, other purpose of the present invention, advantage and novel feature will become obviously, and these embodiment do not limit the present invention.Embodiment
In order to confirm the effect of Topcoating composition of the present invention, the Topcoating method that the PR pattern comprises the following steps by use in the following example forms:
(a) on a substrate, apply a kind of photo-corrosion-resisting agent composition to form light actuating resisting corrosion film;
(b) on described light actuating resisting corrosion film, apply described Topcoating composition to form Topcoating;
(c) use a kind of exposer with the described base plate exposure that has Topcoating; And
(d) the described substrate of development through exposure.
The PR composition that uses previously is by (i) gathered (5-norborene-2-carboxylic acid 2-hydroxyethyl ester/5-norborene-2-carboxylic acid tertiary butyl ester/5-norborene-2-carboxylic acid/maleic anhydride), (ii) light acid propellant and (iii) other specific selection adjuvant be dissolved in prepare in (iv) propylene glycol methyl ether acetate (PGMEA) solvent [referring to J.C.Jung, C.K.Bok, and K.H.Baik, J.Photopolymer Sci.and Technol., 10, (1997) 529; J.C.Jung, C.K.Bok, and K.H.Baik, Proc.SPIE, 3333, (1998) 11; J.C.Jung, M.H.Jung, and K.H.Baik, J.Photopolymer Sci.and Technol., 11, (1998) 481].
The Topcoating composition that prevents the amine pollution in the embodiment of the invention is to be added in a kind of traditional Topcoating composition by the compound that will prevent the amine pollution to prepare.
It is to carry out above under the condition of 15/1000000000ths (ppb) in the concentration of environment amine that all patterns form experiment.Comparative example 1
Under the environment amine concentration of 15ppb, described PR composition is coated on the substrate, in 110 ℃ of bakings 90 seconds, and 23 ℃ of coolings.
, will by NFC 540 Topcoating materials (after this, be called " JSR ") that Japan Synthertic Rubber make as Topcoating composition be coated in PR coating on, in 60 ℃ of bakings 60 seconds and cooling thereafter.
The product that is obtained is exposed with the ArF exposer,, and in 2.38 weight % TMAH solution, develop, obtain to be shown in the 150nm pattern of Fig. 1 thus 110 ℃ of bakings 90 seconds.
As shown in Figure 1, the top of described pattern is subjected to suitable destruction, and its upright sectional view and incomplete.Believe that this result is owing to acid during PED diffuses to due to the unexposed area.Comparative example 2
Under the environment amine concentration of 15ppb, described PR composition is coated on the substrate, in 110 ℃ of bakings 90 seconds, and 23 ℃ of coolings down.
Thereafter, the Aquatar Topcoating coated materials that will be made by Clariant Inc. is on the PR coating, in 60 ℃ of bakings 60 seconds and cooling.
The product that is obtained is exposed with the ArF exposer,, and in 2.38 weight % TMAH solution, develop, obtain to be shown in the 150nm pattern of Fig. 2 thus 110 ℃ of bakings 90 seconds.
As shown in Figure 2, the top of described pattern is subjected to suitable destruction as Fig. 1, and this exposure area development state and incomplete.Embodiment 1
A kind of new Topcoating composition that amine pollutes that prevents of the present invention at first prepares by fusion 20 gram NFC 540 (a kind of Topcoating material of being made by JSR) and 0.016 gram L-proline.
Repeat the process of comparative example 1, but use above-mentioned composition as preventing that the Topcoating composition that amine pollutes from forming described PR pattern.In brief, in the environment amine concentration of about 15ppb, described PR composition is coated on the substrate, in 110 ℃ of bakings 90 seconds, and 23 ℃ of coolings.
, will prevent Topcoating composition that amine pollute be coated on PR coating on, in 60 ℃ of baking 60 seconds and coolings down thereafter.
The product that is obtained is exposed with the ArF exposer,, and in 2.38 weight %TMAH solution, develop, obtain to be shown in the 150nm pattern of Fig. 3 in 110 ℃ of bakings 90 seconds.
Compared to Figure 1, the upright sectional view that destroys and show obvious improvement has been reduced on the top of the pattern among Fig. 3 significantly.Embodiment 2
A kind of new Topcoating composition that amine pollutes that prevents of the present invention prepares by fusion 20 gram NFC 540 (a kind of Topcoating material of being made by JSR) and 0.025 gram tetramethyl ammonium hydroxide pentahydrate.
Use the above-mentioned Topcoating composition that prevents that amine from polluting to carry out lithography process by comparative example 1 identical mode and obtain 150nm pattern as Fig. 4 described.
Compared to Figure 1, the upright sectional view that destroys and show obvious improvement has been reduced on the top of the pattern among Fig. 4 significantly.Embodiment 3
A kind of new Topcoating composition that amine pollutes that prevents of the present invention prepares by fusion 20 gram Aquatar (a kind of Topcoating material of being made by Clariant Inc.) and 0.016 gram L-proline.
Repeat the process of comparative example 2, but use the above-mentioned Topcoating composition that prevents that amine from polluting to carry out the Topcoating process.Carry out lithography process acquisition 150nm PR pattern as shown in Figure 5 by the method for comparative example 2.Compare with Fig. 2, destruction has been reduced on the top of the pattern of Fig. 5 significantly and its upright section shows obviously improvement.Embodiment 4
A kind of new Topcoating composition that amine pollutes that prevents of the present invention prepares by fusion 20 gram Aquatar (a kind of Topcoating material of being made by Clariant Inc.) and 0.025 gram tetramethyl ammonium hydroxide pentahydrate.
Repeat the process of comparative example 2, but use the above-mentioned Topcoating composition that prevents that amine from polluting to carry out the Topcoating process, carry out lithography process acquisition 150nm PR pattern as shown in Figure 6 by the method for comparative example 2.Compare with Fig. 2, destruction has been reduced on the top of the pattern of Fig. 6 significantly and its upright sectional view shows obviously improvement.Embodiment 5
A kind of new Topcoating composition that amine pollutes that prevents of the present invention prepares by fusion 20 gram Aquatar (a kind of Topcoating material of being made by Clariant Inc.) and 0.020 gram triethanolamine.
Repeat the process of comparative example 2, but use the above-mentioned Topcoating composition that prevents that amine from polluting to carry out the Topcoating process, obtain 150nm PR pattern as shown in Figure 7.Compare with Fig. 2, destruction has been reduced on the top of the pattern among Fig. 7 significantly and its upright sectional view shows obviously improvement.
When embodiment 1-5 description used the ArF width of cloth to penetrate as exposure light source, other light sources comprised ultrashort wave (USW) light source such as KrF (248nm), F
2(157nm), E-light beam, ion beam and extreme ultraviolet (EUV), also can use.
Except aforementioned PR composition, traditional PR composition that also can use persons skilled in the art to know.If need, can change the lithography process condition that is used for embodiment.
The result who is obtained by the foregoing description is presented at that amine during the PED pollutes and because acid diffusion and in the deformation of the upper surface of described PR coating, is added in traditional Topcoating composition of the present invention and reduces significantly or avoid by the compound that will a kind ofly prevent the amine pollution.
Above-mentioned discussion of the present invention presents to enumerate explanation and to describe purpose.Described content is not intended to the present invention is limited to the form that disclose in this place.Though description of the invention has comprised one or several specific embodiments and specific variation and modification, after understanding spirit of the present invention, other variation and modification in those skilled in the art's skills and knowledge scope also belongs to category of the present invention.The right that obtains comprises from selecting specific embodiment to the scope that can allow to extend, comprise substituting to desired right, tradable and/or equivalent configurations, function, scope or step, no matter this substituting to desired right, whether tradable and/or equivalent configurations, function, scope or step disclose herein, and do not wish to contribute publicly the theme of any patentability.
Claims (11)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-1999-0020538A KR100401116B1 (en) | 1999-06-03 | 1999-06-03 | Amine contamination-protecting material and a fine pattern forming method using the same |
| KR20538/1999 | 1999-06-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1276541A true CN1276541A (en) | 2000-12-13 |
| CN1215375C CN1215375C (en) | 2005-08-17 |
Family
ID=19589910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB001093614A Expired - Fee Related CN1215375C (en) | 1999-06-03 | 2000-05-30 | Topcoating composition and method for forming fine pattern using said composition |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JP2001022080A (en) |
| KR (1) | KR100401116B1 (en) |
| CN (1) | CN1215375C (en) |
| DE (1) | DE10027587A1 (en) |
| FR (1) | FR2794538B1 (en) |
| GB (1) | GB2352825B (en) |
| IT (1) | IT1320493B1 (en) |
| NL (1) | NL1015367C2 (en) |
| TW (1) | TWI266958B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1294457C (en) * | 2001-11-05 | 2007-01-10 | 东京应化工业株式会社 | Agent for forming coating for narrowing pattern and method for forming fine pattern using the same |
| CN101625524B (en) * | 2008-07-11 | 2012-11-28 | 信越化学工业株式会社 | Photoresist composition and pattern forming method |
| CN104937493A (en) * | 2013-01-24 | 2015-09-23 | 日产化学工业株式会社 | Composition for forming resist upper layer film for lithography and method for manufacturing semiconductor device using same |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100537181B1 (en) * | 1999-12-30 | 2005-12-16 | 주식회사 하이닉스반도체 | Method for forming photoresist pattern capable of preventing degradation caused with delaying develop after exposure |
| KR100390991B1 (en) * | 2001-05-29 | 2003-07-12 | 주식회사 하이닉스반도체 | Forming method for photoresist pattern of semiconductor device |
| KR100390998B1 (en) * | 2001-06-26 | 2003-07-12 | 주식회사 하이닉스반도체 | Method for forming photoresist pattern of semiconductor device |
| RU2222847C1 (en) * | 2002-10-21 | 2004-01-27 | Государственное предприятие "Центр технологий микроэлектроники" | Nanosensor system |
| KR100642416B1 (en) | 2004-08-31 | 2006-11-03 | 주식회사 하이닉스반도체 | Top anti-reflective coating composition and pattern forming method of semiconductor device using the same |
| US20060127821A1 (en) * | 2004-12-09 | 2006-06-15 | Sanyo Electric Co., Ltd. | Method of forming a photoresist pattern |
| JP6007199B2 (en) * | 2013-01-31 | 2016-10-12 | 富士フイルム株式会社 | Pattern forming method and electronic device manufacturing method using the same |
| KR102655599B1 (en) * | 2023-07-17 | 2024-04-08 | 와이씨켐 주식회사 | Coating composition for preventing leaning of semiconsuctor pattern and pattern coated using the same |
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| US3652273A (en) * | 1967-09-11 | 1972-03-28 | Ibm | Process using polyvinyl butral topcoat on photoresist layer |
| JPS5034966B2 (en) * | 1972-07-24 | 1975-11-12 | ||
| GB8700599D0 (en) * | 1987-01-12 | 1987-02-18 | Vickers Plc | Printing plate precursors |
| DE3715790A1 (en) * | 1987-05-12 | 1988-11-24 | Hoechst Ag | RADIATION-SENSITIVE RECORDING MATERIAL |
| EP0556177A1 (en) * | 1990-09-18 | 1993-08-25 | International Business Machines Corporation | Top coat for acid catalyzed resists |
| JPH04204848A (en) * | 1990-11-30 | 1992-07-27 | Matsushita Electric Ind Co Ltd | Fine pattern forming method |
| DE4117127A1 (en) * | 1991-05-25 | 1992-11-26 | Basf Ag | Light-sensitive recording element with mask formed directly on top coat - comprising tear-resistant polymer, used as resist or esp. in computer to plate process |
| SG52770A1 (en) * | 1992-07-10 | 1998-09-28 | Hoechst Celanese Corp | Metal ion reduction in top anti-reflective coatings for photoresists |
| JP3362797B2 (en) * | 1993-04-30 | 2003-01-07 | 東洋紡績株式会社 | Photosensitive resin laminate for printing original plate |
| US5631314A (en) * | 1994-04-27 | 1997-05-20 | Tokyo Ohka Kogyo Co., Ltd. | Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition |
| US5506090A (en) * | 1994-09-23 | 1996-04-09 | Minnesota Mining And Manufacturing Company | Process for making shoot and run printing plates |
| JP3510003B2 (en) * | 1995-05-01 | 2004-03-22 | クラリアント インターナショナル リミテッド | Composition for anti-reflective coating |
| JPH0971765A (en) * | 1995-06-29 | 1997-03-18 | Nippon Zeon Co Ltd | Anti-adhesive composition |
| JP3694703B2 (en) * | 1996-04-25 | 2005-09-14 | Ａｚエレクトロニックマテリアルズ株式会社 | Anti-reflection coating composition |
| JPH10261574A (en) * | 1997-03-19 | 1998-09-29 | Fujitsu Ltd | Method for manufacturing semiconductor device |
-
1999
- 1999-06-03 KR KR10-1999-0020538A patent/KR100401116B1/en not_active Expired - Fee Related
-
2000
- 2000-05-23 TW TW089109900A patent/TWI266958B/en not_active IP Right Cessation
- 2000-05-26 GB GB0012727A patent/GB2352825B/en not_active Expired - Fee Related
- 2000-05-30 CN CNB001093614A patent/CN1215375C/en not_active Expired - Fee Related
- 2000-05-31 JP JP2000162999A patent/JP2001022080A/en active Pending
- 2000-05-31 FR FR0007020A patent/FR2794538B1/en not_active Expired - Fee Related
- 2000-05-31 NL NL1015367A patent/NL1015367C2/en not_active IP Right Cessation
- 2000-06-01 IT IT2000TO000510A patent/IT1320493B1/en active
- 2000-06-02 DE DE10027587A patent/DE10027587A1/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1294457C (en) * | 2001-11-05 | 2007-01-10 | 东京应化工业株式会社 | Agent for forming coating for narrowing pattern and method for forming fine pattern using the same |
| CN101625524B (en) * | 2008-07-11 | 2012-11-28 | 信越化学工业株式会社 | Photoresist composition and pattern forming method |
| US8586282B2 (en) | 2008-07-11 | 2013-11-19 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
| US8592133B2 (en) | 2008-07-11 | 2013-11-26 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
| CN104937493A (en) * | 2013-01-24 | 2015-09-23 | 日产化学工业株式会社 | Composition for forming resist upper layer film for lithography and method for manufacturing semiconductor device using same |
| CN104937493B (en) * | 2013-01-24 | 2019-11-08 | 日产化学工业株式会社 | Composition for forming resist upper layer film for lithography and method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE10027587A1 (en) | 2000-12-21 |
| GB0012727D0 (en) | 2000-07-19 |
| NL1015367A1 (en) | 2000-12-06 |
| ITTO20000510A1 (en) | 2001-12-01 |
| GB2352825A (en) | 2001-02-07 |
| GB2352825B (en) | 2003-12-17 |
| ITTO20000510A0 (en) | 2000-06-01 |
| KR100401116B1 (en) | 2003-10-10 |
| IT1320493B1 (en) | 2003-12-10 |
| JP2001022080A (en) | 2001-01-26 |
| CN1215375C (en) | 2005-08-17 |
| KR20010001380A (en) | 2001-01-05 |
| FR2794538A1 (en) | 2000-12-08 |
| FR2794538B1 (en) | 2004-08-20 |
| NL1015367C2 (en) | 2001-05-17 |
| TWI266958B (en) | 2006-11-21 |
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