CN1268592C - Method and Application of Purifying Tetrafluoromethane - Google Patents
Method and Application of Purifying Tetrafluoromethane Download PDFInfo
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Abstract
Description
相关申请的交叉引用Cross References to Related Applications
本申请是按照35U.S.C.第111(a)节提交的申请,根据35U.S.C.第119(e)(1)节要求根据35U.S.C.第111(b)节于2000年7月9日提交的临时申请60/230,704的申请日的权益。This application is an application filed pursuant to 35 U.S.C. Section 111(a) required by 35 U.S.C. Section 119(e)(1) on July 9, 2000 pursuant to 35 U.S.C. Section 111(b) Benefit from the filing date of provisional application 60/230,704.
技术领域technical field
本发明涉及一种提纯四氟甲烷(下文中可以称为“FC-14”或“CF4”)的方法以及已提纯四氟甲烷的应用。The present invention relates to a method of purifying tetrafluoromethane (hereinafter may be referred to as "FC-14" or "CF 4 ") and the use of the purified tetrafluoromethane.
背景技术Background technique
FC-14在例如半导体器件的制造中用作蚀刻气体或清洁气体,因此要求其高纯度产品。FC-14 is used, for example, as an etching gas or a cleaning gas in the manufacture of semiconductor devices, and thus a high-purity product thereof is required.
为了生产FC-14,迄今为止已提出了各种方法。具体来说已知有例如下列方法:In order to produce FC-14, various methods have been proposed so far. Specifically, the following methods are known, for example:
(1)使二氯二氟甲烷与氟化氢在催化剂存在下反应的方法;(1) A method of reacting dichlorodifluoromethane and hydrogen fluoride in the presence of a catalyst;
(2)使一氯三氟甲烷与氟化氢在催化剂存在下反应的方法;(2) A method of reacting chlorotrifluoromethane and hydrogen fluoride in the presence of a catalyst;
(3)使三氟甲烷与氟气反应的方法;(3) A method of reacting trifluoromethane with fluorine gas;
(4)使碳与氟气反应的方法;和(4) A method of reacting carbon with fluorine gas; and
(5)热分解四氟乙烯的方法。(5) A method of thermally decomposing tetrafluoroethylene.
然而,这些生产FC-14的方法具有的问题是反应所产生的FC-14的中间体或副产物或衍生于原料的杂质与目标产物FC-14形成共沸混合物或类似共沸物的混合物且其分离极度困难。为了解决这一问题,例如已经提出用沸石或含碳吸附剂处理含有三氟甲烷(CHF3)作为杂质的FC-14(参见日本专利2,924,660)。However, these methods for producing FC-14 have a problem that intermediates or by-products of FC-14 produced by the reaction or impurities derived from raw materials form an azeotrope or an azeotrope-like mixture with the target product FC-14 and Its separation is extremely difficult. In order to solve this problem, for example, it has been proposed to treat FC-14 containing trifluoromethane (CHF 3 ) as an impurity with zeolite or a carbonaceous adsorbent (see Japanese Patent No. 2,924,660).
发明公开invention disclosure
然而,迄今为止尚没有适合于工业化生产的、能够提纯含乙烯化合物、烃化合物、一氧化碳和/或二氧化碳作为杂质的FC-14,使之具有良好的效益,同时得到几乎不含这些杂质的高纯度FC-14的方法。However, so far there is no FC-14 suitable for industrial production that can purify ethylene compounds, hydrocarbon compounds, carbon monoxide and/or carbon dioxide as impurities, so that it has good benefits, and at the same time obtains high-purity FC-14 method.
本发明在以上情况下产生,且本发明的目的是提供一种提纯方法,其中FC-14与吸附剂接触而通过吸附除去上述杂质,且可以进行工业化生产并以良好的效益得到高纯度FC-14。The present invention is produced under the above circumstances, and the purpose of the present invention is to provide a purification method, wherein FC-14 is contacted with an adsorbent to remove the above-mentioned impurities by adsorption, and can be industrialized and obtain high-purity FC-14 with good benefits. 14.
为了解决上述问题,本发明人进行了广泛的研究,结果发现在生产高纯度FC-14的方法中,当含有乙烯化合物、烃化合物、一氧化碳和/或二氧化碳作为杂质的FC-14与包含具有特定平均孔径和特定Si/Al比率的沸石的吸附剂和/或具有特定平均孔径的含碳吸附剂(分子筛碳(Molecular Sieving Carbon))接触时,可以选择性地吸附和除去杂质并可得到几乎不含杂质的高纯度FC-14。本发明基于这一发现得以完成。In order to solve the above-mentioned problems, the present inventors conducted extensive studies and found that in the process for producing high-purity FC-14, when FC-14 containing ethylene compounds, hydrocarbon compounds, carbon monoxide and/or carbon dioxide as impurities is combined with When an adsorbent of zeolite with an average pore size and a specific Si/Al ratio and/or a carbon-containing adsorbent (Molecular Sieving Carbon) with a specific average pore size are contacted, impurities can be selectively adsorbed and removed and almost no High-purity FC-14 containing impurities. The present invention has been accomplished based on this finding.
因此,本发明提供了如下面的(1)-(15)所述的提纯四氟甲烷的方法以及已提纯四氟甲烷的应用。Therefore, the present invention provides the method of purifying tetrafluoromethane and the use of the purified tetrafluoromethane as described in (1)-(15) below.
(1)一种提纯四氟甲烷的方法,包括使含有一种或多种乙烯化合物、一种或多种烃化合物、一氧化碳和/或二氧化碳作为杂质的四氟甲烷与平均孔径为3.4-11埃且Si/Al比率为1.5或更小的沸石和/或平均孔径为3.4-11埃的含碳吸附剂接触以降低所述杂质的量。(1) A method for purifying tetrafluoromethane, comprising making tetrafluoromethane containing one or more ethylene compounds, one or more hydrocarbon compounds, carbon monoxide and/or carbon dioxide as impurities with an average pore diameter of 3.4-11 angstroms and a zeolite with a Si/Al ratio of 1.5 or less and/or a carbonaceous adsorbent with an average pore size of 3.4-11 Angstroms are contacted to reduce the amount of said impurities.
(2)如上面(1)中所述的方法,其中含有所述杂质的四氟甲烷与所述沸石和/或所述含碳吸附剂在液相中接触。(2) The method as described in (1) above, wherein the tetrafluoromethane containing the impurity is contacted with the zeolite and/or the carbon-containing adsorbent in a liquid phase.
(3)如上面(1)或(2)中所述的方法,其中所述沸石为选自MS-4A、MS-5A、MS-10X和MS-13X的至少一种。(3) The method as described in (1) or (2) above, wherein the zeolite is at least one selected from MS-4A, MS-5A, MS-10X and MS-13X.
(4)如上面(1)或(2)中所述的方法,其中所述含碳吸附剂为分子筛碳4A和/或分子筛碳5A。(4) The method as described in (1) or (2) above, wherein the carbon-containing adsorbent is molecular sieve carbon 4A and/or molecular sieve carbon 5A.
(5)如上面(1)-(4)中任一项所述的方法,其中一种或多种乙烯化合物选自乙烯、氟乙烯、二氟乙烯和四氟乙烯。(5) The method as described in any one of (1)-(4) above, wherein one or more vinyl compounds are selected from ethylene, vinyl fluoride, vinyl difluoride and tetrafluoroethylene.
(6)如上面(5)中所述的方法,其中一种或多种乙烯化合物为乙烯和/或四氟乙烯。(6) The method as described in (5) above, wherein the one or more vinyl compounds are ethylene and/or tetrafluoroethylene.
(7)如上面(1)-(4)中任一项所述的方法,其中一种或多种烃化合物选自甲烷、乙烷和丙烷。(7) The method as described in any one of (1) to (4) above, wherein one or more hydrocarbon compounds are selected from methane, ethane and propane.
(8)如上面(7)中所述的方法,其中一种或多种烃化合物为甲烷和/或乙烷。(8) The method as described in (7) above, wherein the one or more hydrocarbon compounds are methane and/or ethane.
(9)如上面(1)-(8)中任一项所述的方法,其中将一种或多种乙烯化合物、一种或多种烃化合物、一氧化碳和二氧化碳在所述四氟甲烷中的总含量降低到3ppm或更低。(9) The method as described in any one of the above (1)-(8), wherein one or more ethylene compounds, one or more hydrocarbon compounds, carbon monoxide and carbon dioxide are mixed in the tetrafluoromethane The total content is reduced to 3ppm or less.
(10)如上面(1)-(9)中任一项所述的方法,其中含有一种或多种乙烯化合物、一种或多种烃化合物、一氧化碳和/或二氧化碳作为杂质的四氟甲烷通过使三氟甲烷与氟气反应的直接氟化方法生产。(10) The method as described in any one of (1)-(9) above, wherein tetrafluoromethane containing one or more ethylene compounds, one or more hydrocarbon compounds, carbon monoxide and/or carbon dioxide as impurities It is produced by the direct fluorination method of reacting trifluoromethane with fluorine gas.
(11)如上面(1)-(9)中任一项所述的方法,其中含有一种或多种乙烯化合物、一种或多种烃化合物、一氧化碳和/或二氧化碳作为杂质的四氟甲烷通过使碳与氟气反应的直接氟化方法生产。(11) The method as described in any one of (1)-(9) above, wherein tetrafluoromethane containing one or more ethylene compounds, one or more hydrocarbon compounds, carbon monoxide and/or carbon dioxide as impurities Produced by the direct fluorination method of reacting carbon with fluorine gas.
(12)一种纯度为99.9997质量%或更高的四氟甲烷产品,通过按照如上面(1)-(11)中任一项所述的方法进行提纯而得到。(12) A tetrafluoromethane product having a purity of 99.9997% by mass or higher obtained by purification according to the method described in any one of (1)-(11) above.
(13)一种蚀刻气体,包含如上面(12)中所述的四氟甲烷产品。(13) An etching gas comprising the tetrafluoromethane product as described in (12) above.
(14)一种清洁气体,包含如上面(12)中所述的四氟甲烷产品。(14) A cleaning gas comprising the tetrafluoromethane product as described in (12) above.
简言之,本发明提供了“一种提纯四氟甲烷的方法,包括使含有一种或多种乙烯化合物、一种或多种烃化合物、一氧化碳和/或二氧化碳作为杂质的四氟甲烷与平均孔径为3.4-11埃且Si/Al比率为1.5或更小的沸石和/或平均孔径为3.4-11埃的含碳吸附剂接触以降低所述杂质的量”,“一种通过按照上述方法进行提纯而得到的纯度为99.9997质量%或更高的四氟甲烷产品”以及“一种包含上述四氟甲烷产品的蚀刻气体和清洁气体”。Briefly, the present invention provides "a method of purifying tetrafluoromethane comprising combining tetrafluoromethane containing one or more ethylene compounds, one or more hydrocarbon compounds, carbon monoxide and/or carbon dioxide as impurities with an average A zeolite with a pore size of 3.4-11 angstroms and a Si/Al ratio of 1.5 or less and/or a carbon-containing adsorbent with an average pore size of 3.4-11 angstroms is contacted to reduce the amount of said impurities", "a method by A tetrafluoromethane product having a purity of 99.9997% by mass or higher obtained by performing the purification" and "an etching gas and a cleaning gas comprising the aforementioned tetrafluoromethane product".
实施本发明的最佳方式Best Mode for Carrying Out the Invention
为了生产FC-14,例如已知一种使三氟甲烷与氟气反应的方法,一种使碳与氟气反应的方法和一种热分解四氟乙烯的方法。使用这些方法时,由于原料中存在杂质如有机痕量杂质、痕量氧、痕量水分等,所得FC-14含有一种或多种乙烯化合物、一种或多种烃化合物、一氧化碳和/或二氧化碳作为杂质。For the production of FC-14, for example, a method of reacting trifluoromethane with fluorine gas, a method of reacting carbon with fluorine gas and a method of thermally decomposing tetrafluoroethylene are known. When using these methods, the resulting FC-14 contains one or more ethylene compounds, one or more hydrocarbon compounds, carbon monoxide and/or carbon dioxide as an impurity.
所含的乙烯化合物可以是一种或多种选自乙烯(CH2=CH2)、一氟乙烯(CH2=CHF)、二氟乙烯(CH2=CF2)和四氟乙烯(CF2=CF2)的化合物。The ethylene compound contained may be one or more selected from ethylene (CH 2 =CH 2 ), monofluoroethylene (CH 2 =CHF), difluoroethylene (CH 2 =CF 2 ) and tetrafluoroethylene (CF 2 = CF 2 ).
所含的烃化合物可以是一种或多种选自甲烷(CH4)、乙烷(C2H6)和丙烷(C3H8)的化合物。The hydrocarbon compound contained may be one or more compounds selected from methane (CH 4 ), ethane (C 2 H 6 ) and propane (C 3 H 8 ).
目标产物FC-14以及这些杂质在常压下的沸点示于下表1。The boiling points of the target product FC-14 and these impurities at normal pressure are shown in Table 1 below.
表1
由于目标产物FC-14与这些杂质形成类似共沸物的混合物或者正如表1中所示,它们的沸点接近,因此这些杂质非常难以通过蒸馏操作分离。为了解决这一问题,在常规的蒸馏操作中,以增加蒸馏塔的级数或增加蒸馏塔的数目来尽可能多地降低杂质含量,但这并不合算,而且也几乎不能得到几乎不含这些杂质的高纯度FC-14。Since the target product FC-14 forms an azeotrope-like mixture with these impurities or, as shown in Table 1, their boiling points are close, these impurities are very difficult to separate by distillation. In order to solve this problem, in the conventional distillation operation, the impurity content is reduced as much as possible by increasing the number of distillation towers or increasing the number of distillation towers, but this is not cost-effective, and it is almost impossible to obtain High-purity FC-14 with no impurities.
在本发明中,为了选择性吸附并除去FC-14中的这些杂质,使用平均孔径为3.4-11埃且Si/Al比率为1.5或更小的沸石和/或平均孔径为3.4-11埃的含碳吸附剂(分子筛碳)作为吸附剂。为了测量平均孔径,可以利用使用Ar气体的气体吸附方法。In the present invention, in order to selectively adsorb and remove these impurities in FC-14, a zeolite having an average pore diameter of 3.4-11 angstroms and a Si/Al ratio of 1.5 or less and/or a zeolite having an average pore diameter of 3.4-11 angstroms are used. A carbon-containing adsorbent (molecular sieve carbon) was used as the adsorbent. In order to measure the average pore diameter, a gas adsorption method using Ar gas can be utilized.
因此,所述吸附剂为(1)平均孔径为3.4-11埃且Si/Al比率为1.5或更小的沸石、(2)平均孔径为3.4-11埃的含碳吸附剂(分子筛碳)或(3)通过将平均孔径为3.4-11埃的含碳吸附剂加入平均孔径为3.4-11埃且Si/Al比率为1.5或更小的沸石中得到的吸附剂。本文所用的Si/Al比率为原子比。Thus, the adsorbent is (1) a zeolite with an average pore diameter of 3.4-11 angstroms and a Si/Al ratio of 1.5 or less, (2) a carbon-containing adsorbent (molecular sieve carbon) with an average pore diameter of 3.4-11 angstroms, or (3) An adsorbent obtained by adding a carbon-containing adsorbent having an average pore diameter of 3.4-11 angstroms to a zeolite having an average pore diameter of 3.4-11 angstroms and a Si/Al ratio of 1.5 or less. As used herein, the Si/Al ratio is an atomic ratio.
可以通过使用这些吸附剂除去的FC-14中杂质的具体例子可以是不饱和化合物如乙烯、一氟乙烯、二氟乙烯和四氟乙烯,烃化合物如甲烷、乙烷和丙烷,以及含氧化合物如一氧化碳和二氧化碳。作为杂质优选的是乙烯、四氟乙烯、甲烷、乙烷、一氧化碳和二氧化碳,更优选的是乙烯和乙烷。Specific examples of impurities in FC-14 that can be removed by using these adsorbents may be unsaturated compounds such as ethylene, monofluoroethylene, difluoroethylene, and tetrafluoroethylene, hydrocarbon compounds such as methane, ethane, and propane, and oxygen-containing compounds such as carbon monoxide and carbon dioxide. Preferred as impurities are ethylene, tetrafluoroethylene, methane, ethane, carbon monoxide and carbon dioxide, more preferred are ethylene and ethane.
目标产物FC-14和这些杂质之间的分子尺寸差异小,因此FC-14中这些杂质的选择性吸附和除去几乎不能仅通过分子尺寸上的差异达到。在本发明中,通过考虑吸附剂的极性和孔径,使用下列三种类型的吸附剂作为可选择性吸附和除去这些杂质的吸附剂。The difference in molecular size between the target product FC-14 and these impurities is small, so the selective adsorption and removal of these impurities in FC-14 can hardly be achieved only by the difference in molecular size. In the present invention, the following three types of adsorbents are used as adsorbents that can selectively adsorb and remove these impurities by considering the polarity and pore size of the adsorbent.
第一种吸附剂为平均孔径为3.4-11埃且Si/Al比率为1.5或更小的沸石。其具体例子包括MS-4A。MS-4A的平均孔径为约3.5埃且Si/Al比率为1.0。通过使用该沸石进行吸附操作,可以降低作为杂质的乙烯、四氟乙烯、甲烷、乙烷、一氧化碳和二氧化碳的含量。取决于沸石的种类,甚至可以将杂质含量降低到5ppm或更低,从而可以得到高纯度FC-14。The first adsorbent is a zeolite with an average pore size of 3.4-11 Angstroms and a Si/Al ratio of 1.5 or less. Specific examples thereof include MS-4A. MS-4A has an average pore size of about 3.5 Angstroms and a Si/Al ratio of 1.0. By performing an adsorption operation using this zeolite, the content of ethylene, tetrafluoroethylene, methane, ethane, carbon monoxide, and carbon dioxide as impurities can be reduced. Depending on the type of zeolite, it is even possible to reduce the impurity content to 5 ppm or less, so that high-purity FC-14 can be obtained.
若使用平均孔径低于3.4埃,例如孔径约为3.2埃的沸石,不能确保杂质含量的降低,即使Si/Al比率为1.5或更小。If a zeolite with an average pore diameter of less than 3.4 angstroms, for example about 3.2 angstroms, is used, the reduction of the impurity content cannot be ensured even if the Si/Al ratio is 1.5 or less.
即使Si/Al比率为1.5或更小,若沸石的平均孔径大于11埃,也不能确保杂质含量的降低。Even if the Si/Al ratio is 1.5 or less, if the average pore diameter of the zeolite is larger than 11 angstroms, the reduction of the impurity content cannot be ensured.
此外,即使平均孔径为3.4-11埃,若沸石的Si/Al比率超过1.5,也不能确保杂质含量的降低。Furthermore, even if the average pore diameter is 3.4-11 angstroms, if the Si/Al ratio of the zeolite exceeds 1.5, the reduction of the impurity content cannot be ensured.
第二种吸附剂是平均孔径为3.4-11埃的含碳吸附剂(分子筛碳)。例如平均孔径为约4埃的含碳吸附剂象上述沸石一样也能将杂质含量降低到5ppm或更低,从而可以得到高纯度FC-14。The second adsorbent is a carbonaceous adsorbent (molecular sieve carbon) with an average pore size of 3.4-11 Angstroms. For example, a carbon-containing adsorbent having an average pore diameter of about 4 angstroms can also reduce the impurity content to 5 ppm or less like the above-mentioned zeolite, so that high-purity FC-14 can be obtained.
然而,若含碳吸附剂的平均孔径超过11埃,则不能确保杂质含量的降低,例如若使用通常被使用且表现出强吸附活性的平均孔径约为35埃的活性炭,几乎不能确保杂质含量的降低。However, if the average pore diameter of the carbon-containing adsorbent exceeds 11 angstroms, the reduction of the impurity content cannot be ensured. For example, if activated carbon with an average pore diameter of about 35 angstroms, which is generally used and exhibits strong adsorption activity, is used, the reduction of the impurity content can hardly be ensured. reduce.
第三种吸附剂为通过将平均孔径为3.4-11埃的含碳吸附剂(第二种吸附剂)加入(混入)平均孔径为3.4-11埃且Si/Al比率优选为1.5或更小的沸石(第一种吸附剂)中而得到的吸附剂。取决于该吸附剂的种类,可以将杂质含量降低到甚至为3ppm或更低,从而可以得到更高纯度的FC-14。得到这一结果的原因被认为是由于沸石特别是对一氧化碳、二氧化碳等具有优异的吸附作用,而含碳吸附剂特别是对不饱和化合物等具有优异的吸附作用,而且当这两种吸附剂组合使用时,带来了由这种组合使用引起的效果。The third adsorbent is obtained by adding (blending) a carbonaceous adsorbent (second adsorbent) having an average pore diameter of 3.4-11 angstroms to a carbonaceous adsorbent having an average pore diameter of 3.4-11 angstroms and a Si/Al ratio of preferably 1.5 or less Adsorbent obtained from zeolite (first adsorbent). Depending on the kind of the adsorbent, the impurity content can be reduced to even 3 ppm or less, so that higher purity FC-14 can be obtained. The reason for this result is considered to be that zeolite has excellent adsorption especially for carbon monoxide, carbon dioxide, etc., and carbonaceous adsorbent has excellent adsorption especially for unsaturated compounds, etc., and when these two adsorbents are combined When used, brings about the effect caused by this combined use.
上述沸石和含碳吸附剂可以单独使用,但两种或更多种吸附剂也可以以所需比例组合使用。使用第三种吸附剂时,沸石和含碳吸附剂之间的混合比可以根据杂质的浓度而变化。The above-mentioned zeolite and carbon-containing adsorbent may be used alone, but two or more adsorbents may also be used in combination in a desired ratio. When using the third adsorbent, the mixing ratio between the zeolite and the carbonaceous adsorbent can be changed according to the concentration of impurities.
作为杂质含于FC-14中的乙烯化合物、烃化合物、一氧化碳和/或二氧化碳的浓度并不特别受限,但该浓度优选为0.1质量%或更低,更优选为0.05质量%或更低。The concentration of ethylene compounds, hydrocarbon compounds, carbon monoxide and/or carbon dioxide contained as impurities in FC-14 is not particularly limited, but the concentration is preferably 0.1% by mass or less, more preferably 0.05% by mass or less.
若目标产物FC-14中混入上述杂质以外的杂质,例如诸如FC-116(CF3CF3)和FC-218(C3F8)之类的全氟化合物,这些全氟化合物可以通过在用上述吸附剂处理的步骤之前或之后进行蒸馏操作而分离和除去。If the target product FC-14 is mixed with impurities other than the above-mentioned impurities, such as perfluorinated compounds such as FC-116 (CF 3 CF 3 ) and FC-218 (C 3 F 8 ), these perfluorinated compounds can be passed through in-use Distillation operation is performed before or after the above-mentioned adsorbent treatment step for separation and removal.
在根据本发明提纯FC-14的方法中,使含有杂质的FC-14与吸附剂接触的方法并不受限制,例如可以使含杂质的FC-14与吸附剂在气相中接触、通过气-液接触或在液相中接触。其中,使含杂质的FC-14与吸附剂在液相中接触的方法是有效的和优选的。In the method for purifying FC-14 according to the present invention, the method of contacting FC-14 containing impurities with the adsorbent is not limited, for example, the FC-14 containing impurities can be contacted with the adsorbent in the gas phase, through gas- liquid contact or contact in the liquid phase. Among them, the method of bringing impurity-containing FC-14 into contact with an adsorbent in a liquid phase is effective and preferable.
为了使含杂质的FC-14与吸附剂在液相中接触,可以使用已知的方法如间歇式系统或连续式系统,但在工业上通常可以使用一种例如提供两个固定床型吸附塔单元的方法,且当一个单元达到其饱和吸附限度时,使用另一单元并将第一单元进行再生。In order to bring impurity-containing FC-14 into contact with an adsorbent in a liquid phase, a known method such as a batch system or a continuous system can be used, but an adsorption tower of, for example, a fixed-bed type provided with two unit, and when one unit reaches its saturated adsorption limit, the other unit is used and the first unit is regenerated.
在含杂质的FC-14与吸附剂接触时,处理温度、处理量和处理压力并不特别受限制,但处理温度优选低温,合适的是-50℃至+50℃。在液相情况下,处理压力只要能维持液相就足够了,而在气相情况下,处理压力并不特别受限制。When impurity-containing FC-14 is in contact with the adsorbent, the treatment temperature, treatment amount and treatment pressure are not particularly limited, but the treatment temperature is preferably low temperature, suitably -50°C to +50°C. In the case of the liquid phase, the treatment pressure is sufficient as long as it can maintain the liquid phase, and in the case of the gas phase, the treatment pressure is not particularly limited.
如上所述,通过使用本发明的提纯方法,含于FC-14中的乙烯化合物、烃化合物、一氧化碳和/或二氧化碳可以被有效吸附和除去,从而可以得到高纯度FC-14。所得FC-14的纯度为99.9997质量%或更高,且为了分析纯度为99.9997质量%或更高的FC-14产品,可以使用(1)采用TCD方法、FID方法(各自包括预切割方法)或ECD方法的气相色谱法(GC),或(2)诸如气相色谱质谱仪(GC-MS)的分析仪器。As described above, by using the purification method of the present invention, ethylene compounds, hydrocarbon compounds, carbon monoxide and/or carbon dioxide contained in FC-14 can be efficiently adsorbed and removed, whereby high-purity FC-14 can be obtained. The resulting FC-14 has a purity of 99.9997% by mass or higher, and in order to analyze the FC-14 product having a purity of 99.9997% by mass or higher, it is possible to use (1) a TCD method, a FID method (each including a pre-cut method) or Gas chromatography (GC) of the ECD method, or (2) an analytical instrument such as a gas chromatography mass spectrometer (GC-MS).
所得高纯度FC-14可以在生产半导体器件的方法中用作蚀刻步骤中的蚀刻气体。此外,高纯度FC-14可以在生产半导体器件的方法中用作清洁步骤中的清洁气体。在半导体器件如LSI和TFT的生产方法中,使用CVD方法、溅射方法或汽相淀积方法形成薄或厚的膜并对该膜进行蚀刻以形成电路图案。在用于形成所述薄或厚的膜的设备中,进行清洁以除去积聚在该设备内壁、夹具等上的不必要的沉积物,因为不必要的沉积物导致产生颗粒且必须不时地除去以生产高质量的膜。The resulting high-purity FC-14 can be used as an etching gas in an etching step in a method for producing a semiconductor device. In addition, high-purity FC-14 can be used as a cleaning gas in a cleaning step in a method of producing a semiconductor device. In the production method of semiconductor devices such as LSI and TFT, a thin or thick film is formed using a CVD method, a sputtering method or a vapor deposition method and the film is etched to form a circuit pattern. In the equipment for forming said thin or thick film, cleaning is performed to remove unnecessary deposits accumulated on the inner walls of the equipment, jigs, etc., because unnecessary deposits cause particles and must be removed from time to time Produce high quality membranes.
在通过使用FC-14的蚀刻中,蚀刻可以在各种干蚀刻条件如等离子体蚀刻和微波蚀刻下进行,且FC-14可以通过以适当比例与惰性气体如He、N2和Ar混合或与诸如HCl、O2和H2的气体混合而使用。In etching by using FC-14, etching can be performed under various dry etching conditions such as plasma etching and microwave etching, and FC-14 can be mixed with an inert gas such as He, N 2 and Ar in an appropriate ratio or mixed with Gases such as HCl, O2 and H2 are used in mixture.
下面通过参考实施例和对比例对本发明进行进一步说明,但本发明并不限于这些实施例。The present invention will be further described below by referring to examples and comparative examples, but the present invention is not limited to these examples.
FC-14的原料实施例1Raw material embodiment 1 of FC-14
使碳与氟气在稀释气体存在下反应,除去未反应的氟气并根据常规方法通过分馏提纯富含FC-14的产品气体。然后通过气相色谱法分析产品气体,结果所得FC-14具有下表2所示的组成。The carbon is reacted with fluorine in the presence of a diluent gas, unreacted fluorine is removed and the FC-14 enriched product gas is purified by fractional distillation according to conventional methods. The product gas was then analyzed by gas chromatography, as a result of which the obtained FC-14 had the composition shown in Table 2 below.
表2
FC-14的原料实施例2Raw material embodiment 2 of FC-14
使二氟甲烷(CH2F2)与氟气在稀释气体存在下反应,然后将反应的气体导入碱性清洗塔中以除去产生的氟化氢和轻微量的未反应氟气。根据已知方法由分馏提纯富含FC-14的产品气体并通过气相色谱法分析,结果所得FC-14具有下表3所示的组成。Difluoromethane (CH 2 F 2 ) is reacted with fluorine gas in the presence of diluent gas, and then the reacted gas is introduced into an alkaline cleaning tower to remove generated hydrogen fluoride and a slight amount of unreacted fluorine gas. The FC-14-enriched product gas was purified by fractional distillation according to known methods and analyzed by gas chromatography, with the result that the resulting FC-14 had the composition shown in Table 3 below.
表3
实施例1Example 1
将20g沸石(分子筛4A,由Union Showa K.K.生产,平均孔径:3.5埃,Si/Al比率:1)填充到200ml不锈钢圆筒中并真空干燥,然后在冷却该圆筒的同时加入约70g原料实施例1的FC-14,在将温度保持于-20℃的同时不时搅拌内容物。约8小时后,通过气相色谱法分析液相部分。分析结果示于下表4中。20 g of zeolite (molecular sieve 4A, produced by Union Showa K.K., average pore diameter: 3.5 angstroms, Si/Al ratio: 1) was filled into a 200 ml stainless steel cylinder and vacuum-dried, and then about 70 g of raw materials were added while cooling the cylinder. 1 of FC-14, stirring the contents occasionally while maintaining the temperature at -20 °C. After about 8 hours, the liquid fraction was analyzed by gas chromatography. The results of the analysis are shown in Table 4 below.
表4
由表4中的结果可以看出,通过使用平均孔径为3.5埃且Si/Al比率为1的沸石作为吸附剂,可以降低FC-14中的杂质量且杂质含量可以降低到10ppm或更低。From the results in Table 4, it can be seen that by using zeolite with an average pore diameter of 3.5 angstroms and a Si/Al ratio of 1 as an adsorbent, the amount of impurities in FC-14 can be reduced and the impurity content can be reduced to 10 ppm or less.
实施例2Example 2
将20g沸石(分子筛13X,由Union Showa K.K.生产,平均孔径:10埃,Si/Al比率:1.23)填充到200ml不锈钢圆筒中并真空干燥,然后在冷却该圆筒的同时加入约70g原料实施例1的FC-14,在室温(约18℃)下不时搅拌内容物。约8小时后,通过气相色谱法分析液相部分。分析结果示于下表5中。20 g of zeolite (molecular sieve 13X, produced by Union Showa K.K., average pore diameter: 10 angstroms, Si/Al ratio: 1.23) was filled into a 200 ml stainless steel cylinder and vacuum-dried, and then about 70 g of raw materials were added while cooling the cylinder. 1 of FC-14, stirring the contents occasionally at room temperature (about 18°C). After about 8 hours, the liquid fraction was analyzed by gas chromatography. The results of the analysis are shown in Table 5 below.
表5
由表5中的结果可以看出,通过使用平均孔径为10埃且Si/Al比率为1.23的沸石作为吸附剂,可以降低FC-14中的杂质量且杂质含量可以降低到10ppm或更低。From the results in Table 5, it can be seen that by using zeolite with an average pore size of 10 angstroms and a Si/Al ratio of 1.23 as an adsorbent, the amount of impurities in FC-14 can be reduced and the impurity content can be reduced to 10 ppm or less.
实施例3Example 3
将20g含碳吸附剂(分子筛碳,由Takeda Yakuhin Kogyo K.K.生产,平均孔径:4埃)填充到200ml不锈钢圆筒中并真空干燥,然后在冷却该圆筒的同时加入约70g原料实施例2的FC-14,在室温(约18℃)下不时搅拌内容物。约8小时后,通过气相色谱法分析液相部分。分析结果示于下表6中。20 g of a carbon-containing adsorbent (molecular sieve carbon, produced by Takeda Yakuhin Kogyo K.K., average pore size: 4 angstroms) was filled into a 200 ml stainless steel cylinder and vacuum-dried, and then about 70 g of FC of Raw Material Example 2 was added while cooling the cylinder -14, Stir the contents occasionally at room temperature (about 18°C). After about 8 hours, the liquid fraction was analyzed by gas chromatography. The results of the analysis are shown in Table 6 below.
表6
由表6中的结果可以看出,通过使用平均孔径为4埃的含碳吸附剂(分子筛碳)作为吸附剂,可以降低FC-14中的杂质量且杂质含量可以降低到10ppm或更低。As can be seen from the results in Table 6, by using a carbon-containing adsorbent (molecular sieve carbon) with an average pore diameter of 4 angstroms as the adsorbent, the amount of impurities in FC-14 can be reduced and the impurity content can be reduced to 10 ppm or lower.
实施例4Example 4
将与15g含碳吸附剂(分子筛碳,由Takeda Yakuhin Kogyo K.K.生产,平均孔径:4埃)混合的15g沸石(分子筛4A,由Union Showa K.K.生产,平均孔径:3.5埃,Si/Al比率:1)填充到200ml不锈钢圆筒中并真空干燥,然后在冷却该圆筒的同时加入约70g原料实施例1的FC-14,在室温(约18℃)下不时搅拌内容物。约8小时后,通过气相色谱法分析液相部分。分析结果示于下表7中。15 g of zeolite (molecular sieve 4A, produced by Union Showa K.K., average pore diameter: 3.5 angstroms, Si/Al ratio: 1 ) into a 200ml stainless steel cylinder and vacuum-dried, then add about 70g of FC-14 of Raw Material Example 1 while cooling the cylinder, and stir the contents from time to time at room temperature (about 18°C). After about 8 hours, the liquid fraction was analyzed by gas chromatography. The results of the analysis are shown in Table 7 below.
表7
为了确定痕量杂质的含量,使用TCD方法、FID方法(包括预切割方法)或ECD方法由气相色谱法进行微分析或通过诸如气相色谱质谱仪(GC/MS)的分析仪器进行微分析,并由所得值计算纯度。结果如表8所示。To determine the content of trace impurities, microanalysis by gas chromatography using the TCD method, the FID method (including the pre-cut method) or the ECD method or microanalysis by an analytical instrument such as a gas chromatography mass spectrometer (GC/MS), and Purity was calculated from the obtained value. The results are shown in Table 8.
表8
由表8中的结果可以看出,所得FC-14的纯度为99.9997质量%或更高。As can be seen from the results in Table 8, the purity of the obtained FC-14 was 99.9997% by mass or higher.
对比例1Comparative example 1
将20g沸石(分子筛XH-9,由Union Showa K.K.生产,平均孔径:3.2埃,Si/Al比率:1)填充到200ml不锈钢圆筒中并真空干燥,然后在冷却该圆筒的同时加入约70g原料实施例1的FC-14,在室温(约18℃)下不时搅拌内容物。约8小时后,通过气相色谱法分析液相部分。分析结果示于下表9中。20 g of zeolite (molecular sieve XH-9, produced by Union Showa K.K., average pore diameter: 3.2 angstroms, Si/Al ratio: 1) was filled into a 200 ml stainless steel cylinder and vacuum-dried, and then about 70 g of the raw material was added while cooling the cylinder For FC-14 of Example 1, the contents were stirred occasionally at room temperature (about 18°C). After about 8 hours, the liquid fraction was analyzed by gas chromatography. The results of the analysis are shown in Table 9 below.
表9
由表9中的结果可以看出,即使Si/Al比率为1,但若沸石的平均孔径小于3.4埃,杂质的含量几乎没有降低。From the results in Table 9, it can be seen that even if the Si/Al ratio is 1, the impurity content hardly decreases if the average pore size of the zeolite is less than 3.4 angstroms.
对比例2Comparative example 2
将20g沸石(H-ZSM-5,由N.E.Chemcat K.K.生产,平均孔径:6埃,Si/Al比率:75)填充到200ml不锈钢圆筒中并真空干燥,然后在冷却该圆筒的同时加入约70g原料实施例1的FC-14,在室温(约18℃)下不时搅拌内容物。约8小时后,通过气相色谱法分析液相部分。分析结果示于下表10中。20 g of zeolite (H-ZSM-5, produced by N.E. Chemcat K.K., average pore diameter: 6 angstroms, Si/Al ratio: 75) was filled into a 200 ml stainless steel cylinder and vacuum-dried, and then about 70 g was added while cooling the cylinder For FC-14 of Raw Material Example 1, the contents were stirred occasionally at room temperature (about 18°C). After about 8 hours, the liquid fraction was analyzed by gas chromatography. The results of the analysis are shown in Table 10 below.
表10
由表10中的结果可以看出,即使平均孔径为6埃,但若沸石的Si/Al比率超过1.5,杂质的含量几乎不能得到降低。From the results in Table 10, it can be seen that even if the average pore diameter is 6 angstroms, if the Si/Al ratio of the zeolite exceeds 1.5, the impurity content can hardly be reduced.
对比例3Comparative example 3
将20g含碳吸附剂(活性炭,颗粒状SHIROSAGI KL,由TakedaYakuhin Kygyo K.K.生产,平均孔径:35埃)填充到200ml不锈钢圆筒中并真空干燥,然后在冷却该圆筒的同时加入约70g原料实施例2的FC-14,在室温(约18℃)下不时搅拌内容物。约8小时后,通过气相色谱法分析液相部分。分析结果示于下表11中。20 g of a carbon-containing adsorbent (activated carbon, granular SHIROSAGI KL, produced by Takeda Yakuhin Kygyo K.K., average pore size: 35 angstroms) was filled into a 200 ml stainless steel cylinder and vacuum-dried, and then about 70 g of raw materials were added while cooling the cylinder. 2 of FC-14, stirring the contents occasionally at room temperature (about 18°C). After about 8 hours, the liquid fraction was analyzed by gas chromatography. The results of the analysis are shown in Table 11 below.
表11
由表11中的结果可以看出,若使用平均孔径超过11埃的含碳吸附剂,杂质的含量不能得到降低。From the results in Table 11, it can be seen that if a carbon-containing adsorbent with an average pore diameter exceeding 11 angstroms is used, the content of impurities cannot be reduced.
工业应用性Industrial Applicability
根据本发明,可以降低四氟甲烷中所含的迄今为止非常难以除去的杂质,特别是乙烯化合物、烃化合物、一氧化碳和/或二氧化碳的量。提纯后的高纯度四氟甲烷可以用作蚀刻气体或清洁气体。According to the present invention, it is possible to reduce the amount of impurities contained in tetrafluoromethane which have hitherto been very difficult to remove, especially ethylene compounds, hydrocarbon compounds, carbon monoxide and/or carbon dioxide. Purified high-purity tetrafluoromethane can be used as etching gas or cleaning gas.
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| US3026359A (en) * | 1960-03-16 | 1962-03-20 | Du Pont | Process for preparing polyfluoroalkanes of high purity |
| RU2054375C1 (en) * | 1987-05-15 | 1996-02-20 | Институт неорганической химии СО РАН | Carbon fluoride and method for its production |
| US5417742A (en) * | 1993-12-03 | 1995-05-23 | The Boc Group, Inc. | Removal of perfluorocarbons from gas streams |
| JP2924660B2 (en) * | 1994-09-08 | 1999-07-26 | 昭和電工株式会社 | Purification method of tetrafluoromethane |
| JP3159043B2 (en) * | 1996-03-08 | 2001-04-23 | 昭和電工株式会社 | Method for producing tetrafluoromethane |
-
2001
- 2001-04-26 WO PCT/JP2001/003664 patent/WO2001083412A2/en not_active Ceased
- 2001-04-26 RU RU2002101934A patent/RU2215730C2/en not_active IP Right Cessation
- 2001-04-26 AU AU52617/01A patent/AU5261701A/en not_active Abandoned
- 2001-04-26 CN CN 01801119 patent/CN1268592C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| HK1072594A1 (en) | 2005-09-02 |
| WO2001083412A3 (en) | 2002-04-25 |
| RU2215730C2 (en) | 2003-11-10 |
| WO2001083412A2 (en) | 2001-11-08 |
| CN1561318A (en) | 2005-01-05 |
| AU5261701A (en) | 2001-11-12 |
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