CN1259811C - Method for forming electromagnetic wave interference shielding film on non-conductive material - Google Patents
Method for forming electromagnetic wave interference shielding film on non-conductive material Download PDFInfo
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- CN1259811C CN1259811C CN 01119980 CN01119980A CN1259811C CN 1259811 C CN1259811 C CN 1259811C CN 01119980 CN01119980 CN 01119980 CN 01119980 A CN01119980 A CN 01119980A CN 1259811 C CN1259811 C CN 1259811C
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- 238000007788 roughening Methods 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 239000004033 plastic Substances 0.000 claims description 11
- 229920003023 plastic Polymers 0.000 claims description 11
- 239000010935 stainless steel Substances 0.000 claims description 11
- 229910001220 stainless steel Inorganic materials 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000002390 adhesive tape Substances 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 239000004576 sand Substances 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000003963 antioxidant agent Substances 0.000 claims description 2
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- 235000006708 antioxidants Nutrition 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 239000010431 corundum Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000002966 varnish Substances 0.000 claims description 2
- 239000010419 fine particle Substances 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 abstract description 9
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
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- 229920000647 polyepoxide Polymers 0.000 description 2
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- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
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- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Physical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
Abstract
The invention relates to a method for forming one or more metal films for shielding electromagnetic wave interference on the surface of a non-conductive material, which comprises roughening the surface, and then physically vapor depositing (such as sputtering) one or more metal films on the roughened surface to form the electromagnetic wave interference shielding film. The method of the invention adopts the surface roughening treatment, so that the metal film as the EMI shielding film can be well adhered to the surface of the non-conductive material in a physical vapor deposition mode, the adhesive force can reach 5B level, and the requirements of the market on the EMI shielding film are met or even exceeded.
Description
Technical field
The invention relates to a kind of in the method that for example forms electromagnetic wave interference shading film on the non-conducting material on the appearance dielectric film of the shell of electronic equipment, pliability lead or flexible printed circuit, especially relevant a kind of method that forms this electromagnetic wave interference shading film by physical vapor deposition.
Background technology
Electromagnetic Interference (electromagnetic interference is hereinafter to be referred as EMI) is undesired energy radiation, and to surpassing 1000MHz, wherein 0.01 to 1000MHz partly is the scope of radio frequency interference (RFI) to its frequency range between 60Hz.
The radiation of EMI is to follow the use of electronic equipment and produce, for example microwave oven, personal computer or the like.The radiation of EMI will cause electronic equipment to each other interference and produce the problem of noise, so have influence on for example normal operation of Communication Equipment, laboratory apparatus and artificial heart or the like such as radio.Advanced country can allow the EMI radiation to make standard to the maximum of electronic equipment in the world at present, and for example US Federal Communication Committee (FCC) makes standard in nineteen eighty-three to the digital electronic product of the living 10KHz to 1000MHz of meeting.
The elimination of EMI generally can encase radiation by form the low-impedance shielding layer of a tool on every electronic building brick or equipment.For forming a metallicity coating on the EMI masking methods of the general hard non-conducting material plastic casing that is included in electronic equipment commonly used, for example spray paint, chemical metallization and vacuum metallization processes etc., and directly be coated with a metal forming.The kind of metal comprises copper, silver, chromium, nickel, gold, zinc etc.Its adhesive force of EMI shielding film, the accuracy that these modes form and cover power and can't satisfy the electronic equipment of microminiaturization day by day.
Owing to the microminiaturization day by day of electronic equipment, the chance that flexible printed circuit and the pliability lead that is mated are employed is more general at present.For example, the LCD personal computer that is integrated into one of mobile computer, main frame and LCD display, mobile telephone, and scanner etc.Moreover, number (density) calculation function more and more higher and the IC chip that is installed on the various IC chips on this flexible printed circuit is more and more stronger, the EMI that the pliability lead that makes flexible printed circuit and match is launched is also more and more strong, therefore must form the EMI shielding layer on their external insulation film surface, to prevent that other contiguous electronic equipment is produced undesired influence.
The formation of the EMI shielding film of known pliability lead and flexible printed circuit is included in external insulation film one surface of pliability lead or flexible printed circuit and goes up printing one metallicity coating and/or be coated with a conduction stickiness adhesive tape.The former composition is still needed except metal just can have enough adhesive force by nonmetal chemistry product as medium; The latter then comprises a polymer base material, is plated on this base material one lip-deep metal level and is formed at adhesive layer on this metal level.With the metallicity coating of mode of printing as the EMI shielding film, because its non-metal film completely, so must bestow suitable thickness (for example about 20 μ m or height) just can have low-impedance character, cause the flexual reduction of pliability lead or printed circuit board (PCB), its EMI screening capacity is also desirable not to the utmost in addition, and it is outer coated with this conduction stickiness adhesive tape to still need again.Yet pliability lead or printed circuit board (PCB) itself generally all has socket, connectivity port or the connecting hole etc. that are used for external IC chip, and these parts must be kept exposed state, can not be coated with the EMI shielding film.So, this conduction stickiness adhesive tape must be pre-formed corresponding to these not desire form EMI shielding film window partly, just can be coated on the outer surface of pliability lead or printed circuit board (PCB), cause time-consuming taking a lot of work and bottleneck that output can't improve.
Summary of the invention
Main purpose of the present invention promptly provide a kind of do not have an above-mentioned prior art shortcoming form the method for electromagnetic wave interference shading film in non-conducting material, especially a kind of adhesive force with improvement form the method for electromagnetic wave interference shading film in non-conducting material.
For reaching the foregoing invention purpose, what the present invention finished is a kind of in the method for non-conducting material formation electromagnetic wave interference shading film, comprises the following step:
A) alligatoring one non-conducting material desires to be formed a surface of EMI shielding film; And
B) physical vapor deposition one layer or more metal film on the surface of this alligatoring.
There is no particular restriction to be applicable to the non-conducting material of the inventive method, generally be meant the shell of electronic equipment, the plastics of ABS, PS, PP, PC etc. for example, glass or pottery, also can be pliability lead and the not soldered as yet external insulation film of going up the flexible printed circuit of IC chip, for example polyimide (polyimide) and epoxy resin (epoxy resin).In the inventive method, do not desire to be formed the part of EMI shielding film on the surface of this non-conducting material, for example socket, connectivity port or connecting hole etc. are added with a high temperature resistant stickiness adhesive tape by subsides in advance and give covering.
The roughening treatment system of the inventive method step a) impacts the surface of this non-conducting material with hard minuteness particle and finishes, for example use an abrasive blast equipment and gases at high pressure to carry this hard minuteness particle, impact the surface of this non-conducting material again by a release of pressure nozzle of this abrasive blast equipment.Suitable hard minuteness particle can be granular size between 50-1000 mesh (mesh), and the aluminium oxide of preferable 80-300 mesh, corundum, stainless steel sand, iron sand or silicon dioxide granule are preferable with aluminium oxide or silicon dioxide granule.
Preferably, the non-conducting material of this alligatoring is carried out cleaning, for example with the gases at high pressure flushing, removes will remain in this lip-deep particle.
Preferably; the step b) of the inventive method comprises physical vapor deposition one first metal film and one second metal film; the good conductivity of this first metal film tool wherein, and the anti-oxidant and/or wear-resisting wiping of this second metal film tool and be used as the diaphragm of this first metal film.
Selectivity, the step b) of the inventive method comprise physical vapor deposition one first metal film, and the inventive method further is contained in coating one deck is handled as the anti-lines of the hand on this first metal film varnish or wax layer.
Preferably, the physical vapor deposition of the step b) of the inventive method is a sputter.
Preferably, first metal film of the inventive method system be selected from copper, silver, nickel, zinc, gold, platinum, chromium, cadmium, tungsten and etc. the cohort formed of alloy.More preferably, this first metal film is copper, silver, gold or aluminium film, and its thickness is between 0.2 micron to 10 microns.
Preferably, second metal film of the inventive method is nickel, chromium, nickel alloy, evanohm or stainless steel membrane, and its thickness is between 0.1 micron to 10 microns.
The physical vapor deposition of the inventive method step b) preferably places the non-conducting material of alligatoring on the chassis; send into two layers of metal film of cabin more than serial connection system of processing (Multi-chamber cluster tool) continuous sputtering, for example a copper film and as the stainless steel membrane of the diaphragm of this copper film.Suitable sputter operating condition is: 10
-2-10
-5The inert gas atmosphere of torr pressure, room temperature to 150 ℃ temperature, 1-10 minute, 1-50kW power.
Owing to can't form powerful bond between non-conducting material and the metal, therefore when non-conducting material will utilize the mode of physical vapor deposition (for example sputter) to form electromagnetic wave interference shading film, must through earlier on the non-conducting material and processing to increase the adhesion effect of itself and metallic film.Generally speaking, the intermembranous adhesive force of undressed plastic housing and jet-plating metallization reaches the highest level 5B all not as good as 1B (according to the ASTM3359 method of testing) and the inventive method can significantly improve its adhesive force, meets industrial requirement.
The present invention for example on the shell of an electronic equipment, provides the EMI shielding film preparation method of a novelty to a non-conducting material.The inventive method has simply, output is high and advantage such as the EMI shielding film adhesive force that forms is good.
Description of drawings
Fig. 1 a is the process block diagram according to the method for a preferred embodiment of the present invention.
Fig. 1 b show a non-conducting material in the step b) of Fig. 1 a flow process to c) time generalized section.
Embodiment
Shown in the flow process of Fig. 1 a, one is a kind of in the method for non-conducting material formation electromagnetic wave interference shading film according to what the present invention finished, comprises following key step:
A) alligatoring one non-conducting material desires to be formed a surface of EMI shielding film; And
B) physical vapor deposition one layer or more metal film on the surface of this alligatoring.
Fig. 1 b shows the generalized section of a non-conducting material when each step of Fig. 1 a flow process.
To be the preferred embodiment that example illustrates the inventive method below with the plastic casing (constituting) of mobile computer by PC and ABS material.
With this plastic casing that cleaned send into one have bleed and the confined chamber of air filter in, use one to be 0.4Kg/cm with gauge pressure
2Forced air (the convenient pressure scope of forced air between gauge pressure 0.1 to 2Kg/cm
2) be the abrasive blast equipment of carrier with the silicon dioxide granule of particle diameter between the 80-300 mesh, be the nozzle of 8.2mm by bore, impact this plastic casing in the distance of about 10cm surperficial about 15 seconds.Then simple use a forced air to wash to clean this impact surperficial excessively.This confined chamber inner bottom part is provided with a retracting device and used silicon dioxide granule is collected, together with bleeding and the collected person's recirculation use of air filter.In another embodiment, this impacted plastic casing with forced air flushing, and was through washing and dry and finish cleaning.
Be placed in through this plastic casing of this roughening treatment and send into one on the chassis continuously and have many cabins serial connection system of processing of two sputter reaction cabins, order is carried out the sputter of copper film and stainless steel membrane.In 2 * 10
-32 fens clock times of sputter in the argon gas electricity slurry of torr pressure, 150 ℃ of temperature and 5.5Kw power and on this surface the about 0.6 micron copper film of sputter one layer thickness.Protect this copper film to make it be difficult for oxidation with the about 0.3 micron stainless steel membrane of similar condition sputter one thickness again on this copper film, wherein stainless steel 316 is used as and shoots at the target.
Test through the ASTM3599 method by the adhesive force on the surface of EMI shielding film its and this plastic casing of the invention described above method preparation and can reach the 5B level, meet industrial requirement fully.
In another preferred embodiment of the present invention, a pertroleum wax is followed and is appliedly prevented that on this stainless steel membrane the lines of the hand handle, and further protects this stainless steel membrane and copper film.
Claims (17)
1. one kind forms the method for electromagnetic wave interference shading film in non-conducting material, comprises the following step:
A) hard minuteness particle is impacted a non-conducting material and desire to be formed a surface of EMI shielding film to carry out alligatoring; And
B) sputter one layer or more first metal film and one layer or more second metal film on the surface of this alligatoring, this first metal film tool conductivity wherein, and the anti-oxidant and/or wear-resisting wiping of this second metal film tool and be used as the diaphragm of this first metal film;
Wherein the thickness of first metal film is between 0.2 micron to 10 microns, and the thickness of second metal film is between 0.1 micron to 10 microns.
2. the method for claim 1, wherein the roughening treatment of step a) is to carry this hard minuteness particle impacts this non-conducting material by a release of pressure nozzle surface with a gas-pressurized.
3. the method for claim 1, wherein this hard minuteness particle is to be selected from aluminium oxide, corundum, stainless steel sand, iron sand, and the mixing cohort formed of silicon dioxide or above-mentioned fine particle.
4. method as claimed in claim 3, wherein this hard minuteness particle is aluminium oxide or silicon dioxide.
5. method as claimed in claim 3, wherein this hard minuteness particle has a particle diameter between the 50-1000 mesh.
6. method as claimed in claim 5, wherein this hard minuteness particle has a particle diameter between the 80-300 mesh.
7. the method for claim 1, wherein this non-conducting material is plastics, glass or pottery.
8. method as claimed in claim 7, wherein this non-conducting material is plastics.
9. the method for claim 1, it further comprises:
A ') before step b), the non-conducting material of this alligatoring is carried out cleaning.
10. method as claimed in claim 9 is wherein washed with gases at high pressure.
11. the method for claim 1, step b) wherein further are contained in coating one deck is handled as the anti-lines of the hand on this second metal film varnish or wax layer.
12. as claim 1 or 11 described methods, first metal film wherein is to be selected from the cohort that copper, silver, nickel, zinc, gold, platinum, chromium, cadmium, tungsten and their alloy thereof are formed.
13. the method for claim 1, first metal film wherein are copper, silver, gold or aluminium film, and its thickness is between 0.2 micron to 10 microns.
14. method as claimed in claim 13, first metal film wherein is a copper film.
15. as claim 1 or 13 described methods, wherein this second metal film is nickel, chromium, nickel alloy, evanohm or stainless steel membrane.
16. method as claimed in claim 15, wherein this second metal film is a stainless steel membrane.
17. the method for claim 1, wherein before the step a) alligatoring, the part that the EMI shielding film is not desired to be formed in the surface of this non-conducting material is pasted to add with a high temperature resistant stickiness adhesive tape gives covering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01119980 CN1259811C (en) | 2001-07-05 | 2001-07-05 | Method for forming electromagnetic wave interference shielding film on non-conductive material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01119980 CN1259811C (en) | 2001-07-05 | 2001-07-05 | Method for forming electromagnetic wave interference shielding film on non-conductive material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1395465A CN1395465A (en) | 2003-02-05 |
| CN1259811C true CN1259811C (en) | 2006-06-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 01119980 Expired - Fee Related CN1259811C (en) | 2001-07-05 | 2001-07-05 | Method for forming electromagnetic wave interference shielding film on non-conductive material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI476106B (en) * | 2012-06-27 | 2015-03-11 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101553105B (en) * | 2008-04-01 | 2013-07-17 | 林淑清 | Electromagnetic wave protection structure |
| US8410584B2 (en) * | 2008-08-08 | 2013-04-02 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages with electromagnetic interference shielding |
| WO2011038534A1 (en) * | 2009-09-30 | 2011-04-07 | Lin Shuchling | Electromagnetic wave protection structure |
| CN102164471A (en) * | 2010-02-22 | 2011-08-24 | 旭达精密工业股份有限公司 | Shielding structure capable of resisting electromagnetic interference or used for electrostatic conduction and manufacturing method thereof |
| CN102312195A (en) * | 2010-07-08 | 2012-01-11 | 向熙科技股份有限公司 | Electromagnetic wave shielding layer and method for preparing same in plastic casing |
| CN102896832B (en) * | 2011-07-28 | 2015-02-04 | 中国科学院金属研究所 | Power module metalized ceramic substrate and metallization method thereof |
| CN104608437A (en) * | 2015-02-05 | 2015-05-13 | 吴江市金桥纺织品有限公司 | Soft nano-shielding film and production method thereof |
| CN104962861A (en) * | 2015-06-03 | 2015-10-07 | 东莞市明谷一纳米材料有限公司 | Alloy composite material and preparation method thereof |
| CN104992780B (en) * | 2015-07-06 | 2017-07-14 | 南京汇金锦元光电材料有限公司 | Prepare deposition chamber dividing plate in the magnetic control sputtering device that conductive film is used and preparation method thereof |
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2001
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI476106B (en) * | 2012-06-27 | 2015-03-11 |
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