CN113814504A - Packaging method for non-high-temperature connection temperature sensor - Google Patents
Packaging method for non-high-temperature connection temperature sensor Download PDFInfo
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- CN113814504A CN113814504A CN202111030162.6A CN202111030162A CN113814504A CN 113814504 A CN113814504 A CN 113814504A CN 202111030162 A CN202111030162 A CN 202111030162A CN 113814504 A CN113814504 A CN 113814504A
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 24
- 229910000679 solder Inorganic materials 0.000 claims abstract description 63
- 239000002131 composite material Substances 0.000 claims abstract description 48
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000004321 preservation Methods 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000000945 filler Substances 0.000 claims description 17
- 238000005219 brazing Methods 0.000 claims description 12
- 230000006698 induction Effects 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 3
- 238000003466 welding Methods 0.000 abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 7
- 239000007791 liquid phase Substances 0.000 abstract description 6
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- 230000009471 action Effects 0.000 description 5
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
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- 229910052725 zinc Inorganic materials 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
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- 238000009766 low-temperature sintering Methods 0.000 description 2
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- 238000010899 nucleation Methods 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention discloses a packaging method of a non-high-temperature connection temperature sensor, which adopts composite solder with high silver content (Ag content is up to 40-60%), and realizes instantaneous liquid phase diffusion welding and rotating magnetic field auxiliary welding by heating and heat preservation under the vacuum condition. The method can ensure that the substrate connection of the electronic device in the step (3) can be carried out below the service temperature (60 ℃ to 100 ℃), and compared with the operation at the service temperature, the method is more convenient and easy to operate, and the connection difficulty of the method is greatly reduced without heating environment, so that the method can effectively reduce the packaging difficulty of the high-temperature device, reduce the processing cost, and ensure that the packaged electronic insert has more excellent service performance and is more resistant to high temperature.
Description
Technical Field
The invention relates to the technical field of high-temperature packaging of electronic devices, in particular to a packaging method of a non-high-temperature connection temperature sensor.
Background
For electronic devices such as temperature sensors and the like, high-temperature packaging is often required, and the electronic devices are usually packaged and connected by using brazing filler metals, but the brazing filler metals and the connection method in the prior art have various problems, the standard electrode potential of zinc of the zinc-based high-temperature brazing filler metal is low, galvanic corrosion is easily formed between the zinc-based high-temperature brazing filler metal and other metals, the service life of the devices in an extreme environment is shortened, Zn elements are easily combined with oxygen and are easily corroded, meanwhile, the wettability of zinc, copper and a nickel substrate is poor, and the packaging effect is poor. The disadvantages of the gold-based high-temperature solder are that the solder is brittle and has high hardness, the solder is not easy to process, prepare and form, and the gold-based solder is expensive, thereby greatly restricting the large-scale application of the solder in the packaging field. The silver low-temperature sintering connection has the defects of slow dynamics in the connection process and large required auxiliary pressure due to the self existence of the solid-state sintering connection, so that the silver low-temperature sintering connection cannot be widely applied. In addition, the above methods require different components to be connected at a higher service temperature, which makes operation difficult at high temperature, and for temperature-sensitive electronic devices, the electronic devices are damaged at a high temperature for a long time, thereby affecting reliability and quality of the electronic devices.
Therefore, in view of the problems in the prior art, it is desirable to provide a package technology that is not connected at high temperature, easy to operate, low in cost, and capable of improving the reliability of electronic devices.
Disclosure of Invention
The invention aims to avoid the defects in the prior art and provides a packaging method of a non-high temperature connection temperature sensor, which is used for connecting under a non-high temperature condition, is easy to operate, has low cost and improves the reliability of an electronic device.
The purpose of the invention is realized by the following technical scheme:
the packaging method for the non-high temperature connection temperature sensor comprises the following main steps:
(1) adding the SnAgCu series lead-free solder and the nano-grade Ag powder into rosin alcohol, stirring and mixing to obtain a composite solder, wherein the mass percent of Ag in the composite solder is 40-60%;
(2) coating a layer of the composite brazing filler metal on the surface, to be connected, of a substrate of an electronic device, and connecting the substrate;
(3) heating the connected substrates to 220-280 ℃ under a vacuum condition, and carrying out heat preservation treatment for 25-40 min;
(4) applying a rotating magnetic field while performing heat preservation treatment, wherein the magnetic induction intensity of the magnetic field is 300 mT-340 mT;
(5) and (6) cooling.
Preferably, in the step (2), the content of the Ag element in the prepared composite solder is 40-60%.
Preferably, the SnAgCu-based lead-free solder is Sn3.0Ag0.5Cu-based lead-free solder.
Preferably, in the step (3), a bonding pressure of 0-0.1MPa is applied to the substrate joint under vacuum.
Preferably, in the step (3), heating is started after the vacuum degree is less than 2X 10-3 Pa, and the heating mode is resistance radiation heating.
Preferably, in the step (4), a rotating magnetic field is applied by using a permanent magnet, and the rotating speed of the permanent magnet is 1000 r/min.
The invention has the beneficial effects that:
the packaging method of the non-high-temperature connection temperature sensor adopts the composite solder with high silver content (Ag content is up to 40-60%), and the instantaneous liquid phase diffusion welding and the rotating magnetic field auxiliary welding are realized by heating and heat preservation under the vacuum condition. The method can ensure that the substrate connection of the electronic device in the step (3) can be carried out below the service temperature (60 ℃ to 100 ℃), and compared with the operation at the service temperature, the method is more convenient and easy to operate, and the connection difficulty of the method is greatly reduced without heating environment, so that the method can effectively reduce the packaging difficulty of the high-temperature device, reduce the processing cost, and ensure that the packaged electronic insert has more excellent service performance and is more resistant to high temperature.
Drawings
The invention is further illustrated by means of the attached drawings, the content of which is not in any way limitative of the invention.
Fig. 1 is an SEM image of joint fracture for the composite solder with 3.0% Ag content.
Fig. 2 is an SEM image of 30% Ag content composite solder joint fracture.
Fig. 3 is an SEM image of 40% Ag content composite solder joint fracture.
Fig. 4 is an SEM image of 50% Ag content composite solder joint fracture.
Fig. 5 is an SEM image of the joint fracture of the composite solder with 60% Ag content.
Fig. 6 is an SEM image of joint fracture for the composite solder with 70% Ag content.
Fig. 7 is an SEM image of the joint fracture of the 80% Ag content composite solder.
Fig. 8 is a schematic view of instantaneous liquid phase diffusion of the composite filler metal.
Fig. 9 is a microstructure diagram of an IMC layer Ag3Sn compound with added nano-Ag particles.
FIG. 10 is a view showing the internal microstructure of a composite filler metal joint obtained in the absence of a magnetic field.
FIG. 11 is a view showing the internal microstructure of a composite filler metal joint obtained under the condition where a rotating magnetic field is applied.
FIG. 12 is a microstructure view of an interface of a composite filler metal joint obtained in the absence of a magnetic field.
FIG. 13 is a microstructure view of the interface of a composite filler metal joint obtained under the condition of adding a magnetic field.
FIG. 14 shows the tensile strength of the composite braze joint under different conditions.
Detailed Description
The invention is further illustrated by the following examples.
Example 1
The packaging method of the non-high temperature connection temperature sensor of the embodiment comprises the following main steps:
(1) adding the SnAgCu series lead-free solder and the nano-grade Ag powder into rosin alcohol, stirring and mixing to obtain a composite solder, wherein the Ag element content in the composite solder is 50%;
(2) coating a layer of the composite brazing filler metal on the surface, to be connected, of a substrate of an electronic device, and lapping the substrate;
(3) heating the lapped base plate to 250 ℃ under a vacuum condition until the vacuum degree is less than 2 x 10 < -3 > Pa, wherein the heating mode is resistance radiation heating, and carrying out heat preservation treatment for 30min after the temperature is reached;
(4) applying a rotating magnetic field while performing heat preservation treatment, wherein the magnetic induction intensity of the magnetic field is 320 mT; the embodiment adopts a rotating permanent magnet to provide a rotating magnetic field, and the rotating speed of the permanent magnet is 1000 r/min
(5) And (6) cooling.
The packaging method of the embodiment adopts an instantaneous liquid phase diffusion technology, a rotating magnetic field is initially added for auxiliary welding, and high-content nanoscale Ag particles are used as main materials of the composite brazing filler metal, so that compared with the existing high-temperature packaging technology, the packaging difficulty of a high-temperature device is effectively reduced, the damage of high temperature to a temperature sensor in the packaging process is greatly reduced, and the service performance of the device is improved.
Example 2
The main technical solution of this embodiment is substantially the same as that of embodiment 1, and the features that are not explained in this embodiment adopt the explanations in embodiment 1, and are not described herein again. The present embodiment is different from embodiment 1 in that:
(1) the content of Ag element in the obtained composite solder is 40 percent;
(2) heating at 220 deg.C, and maintaining the temperature for 25 min;
(4) the magnetic induction intensity of the magnetic field is 300 mT;
example 3
The main technical solution of this embodiment is substantially the same as that of embodiment 1 or embodiment 2, and the features that are not explained in this embodiment adopt the explanations in embodiment 1 or embodiment 2, which are not described herein again. The present embodiment is different from embodiment 1 in that:
(1) the Ag element content in the obtained composite solder is 60 percent;
(2) heating at 280 deg.C, and maintaining the temperature for 40 min;
(4) the magnetic induction intensity of the magnetic field is 340 mT;
and (3) analyzing experimental result data:
influence of (a) silver content
The method adopts the same conditions and operations, uses the same raw materials, and uses composite solders with different Ag contents (the specific contents are shown in Table 1) to package the same electronic device.
Respectively placing the packaged electronic devices in a 350 ℃ constant temperature aging furnace for high temperature service performance test, heating the electronic devices in the constant temperature aging furnace until the electronic devices are broken, and recording the breaking time, wherein the recording data are as follows:
| mass fraction of Ag content | 3.0% | 10% | 20% | 30% | 40% | 50% | 60% | 70% | 80% |
| Time to break of test specimen | 2h | 10h | 187h | 372h | 500h without fracture | 500h without fracture | 500h without fracture | 120h | 7h |
As can be seen from the service condition of the composite solder with different Ag contents at 350 ℃, the composite solder (with the Ag content of 40-60%) prepared in the step 1 has excellent high-temperature service performance for welding or packaging electronic devices compared with the prior art.
SEM images of the structures of electronic device samples of composite solders with different Ag contents are shown in the attached drawings.
From the SEM image of the joint fracture of the composite solder with the Ag content of 13.0%, the joint fracture layer is in the solder layer, because the melting point of the solder is 220 ℃, and the solder is directly molten when the solder is in service at 350 ℃.
From the SEM image of the joint fracture of the composite solder with 230% Ag content, it can be seen that, along with the addition of Ag particles, during the heating and heat preservation process of the low-melting point Sn3.0Ag0.5Cu lead-free solder (melting point 220 ℃) and the high-melting point Ag particles (melting point 962 ℃) at 250 ℃, the low-melting point Sn3.0Ag0.5Cu lead-free solder powder is melted to form a liquid phase, and is connected with the Cu base metal, and simultaneously, the low-melting point Ag particles and the high-melting point metal are subjected to solid-liquid interdiffusion to form a new higher-melting-point connecting layer, but at the moment, the solid high-melting-point Ag particles are still remained in the connecting layer, so that the joint structure is further improved. However, the fracture layer can also be seen in Cu3A Sn compound layer. This is because the Ag content of the Ag particles added to the solder is too low, which results in the generation of Ag in the solder as the aging progresses3The Sn compound is insufficient, so that the Sn element in the brazing filler metal cannot be effectively prevented from diffusing to the Cu substrate, and the Cu is effectively inhibited3Growth of Sn compounds, and excessive thickness of Cu3The Sn compound layer is the main cause of specimen fracture.
As can be seen from SEM images of the composite solder joints with Ag contents of 540% -60%, the three sets of samples did not break due to brittle Cu3The Sn layer is not favorable for the structural stability, which causes the reduction of the mechanical property of the joint, but because the enough Ag particle powder forms a layer of compact Ag in the Sn-rich environment during the transient liquid phase diffusion process3Sn "inhibiting layer", Cu affected by it3The growth of the Sn layer is inhibited, so that the mechanical property of the joint tends to be stable.
Tensile strength tests are carried out on three groups of samples corresponding to the composite solder with the Ag contents of 40%, 50% and 60%, tensile strength testing instruments adopted for the tensile strength tests are electronic universal tensile testing machines (model: WDW-100, maximum testing force 100kN, tensile speed of 1mm/min and temperature of 26 ℃), and the tensile strength of the solder joint with the Ag content of 40% is 33MPa, the tensile strength of the solder joint with the Ag content of 50% is 54MPa, the tensile strength of the solder joint with the Ag content of 60% is 42MPa, and the tensile strengths are all greater than the strength (25 MPa) of the original Sn3.0Ag0.5Cu soldered joint.
When compoundingWhen the Ag content in the solder exceeds 60%, it can be seen from FIGS. 6 and 7 that the Ag in the solder is broken3The content of the added Ag is too high at the Sn compound inhibition layer, so that a large amount of granular Ag is continuously generated in the solder along with the continuous aging3Sn compound, and Ag3The Sn compound is aggregated to grow into a lamellar structure, and the excessively thick and large Ag3Sn compound is easy to generate tough-brittle fracture cracks under the action of stress, so that a sample is fractured.
(II) influence of rotating magnetic field on packaging effect
In order to verify the action effect of an external magnetic field, nano-sized Ag particles are added into the brazing filler metal, the mass fractions of the Ag particles are 50%, a group of the Ag particles applies a rotating magnetic field with the magnetic field intensity of 340mT and the rotating speed of a permanent magnet of 1000 r/min, another group of the Ag particles does not apply the rotating magnetic field, other process conditions are the same, two samples are respectively obtained, the composite brazing filler metal microstructures of the two samples are respectively shown in figures 10 and 11, and the composite brazing filler metal microstructures of the two samples are respectively shown in figures 10 and 113The Sn compound is fine overall. After the application of the rotating magnetic field, the tensile strength of the joint as a whole was higher than that without the application of the magnetic field. The reason is that the rotating magnetic field is applied in the solidification process of the composite solder joint, which is beneficial to promoting Ag3The Sn compound is uniformly distributed, the agglomeration of the Ag3Sn compound is inhibited, and fine Ag is added3The quantity of Sn compounds improves the nucleation rate of the weld joint structure, so that the refinement degree of the weld joint structure of the composite solder joint is larger than that of the conventional condition, and the shear strength of the joint is stronger than that of the conventional condition. For the composite solder joint, the strip Ag is made under the action of the rotating magnetic field3The Sn compound is broken to form fine Ag3Sn compound, increasing Ag3The heterogeneous nucleation effect of Sn on the welding seam structure improves the mechanical property of the welding seam. In addition, as can be seen by comparing the roughness of the composite solder joint interface compound in fig. 12 and 13 in the presence of a magnetic field, the rotating magnetic field action is beneficial to reducing the roughness of the interface IMC layer and improving the connection action of the interface IMC layer. Therefore, the application of the rotating magnetic field is beneficial to improving the tensile strength of the composite solder joint。
(III) testing the influence of the Ag particle size on the melting property, tensile strength and wetting power of the composite solder
The method of the invention adopts the same conditions and raw material proportioning operation, wherein one group adopts micron-sized silver powder (with the grain diameter of 1 mu m), and the other group adopts nano-sized silver powder (with the grain diameter of 20 nm), and the same is 50 percent of Ag content. The melting performance, the tensile strength and the maximum wetting power of the composite solder paste in a test sample are tested, wherein the melting performance is measured by observing and recording the temperature during melting through naked eyes, the tensile strength is tested by using an electronic universal tensile tester, the maximum wetting power is measured by adopting a step temperature rise method, namely heating at different temperatures, recording the alloy wetting power, and measuring the characteristic parameters of the wettability of the composite solder paste, namely the maximum wetting power (Fmax) and the wetting time (T). The test results are shown in Table 2
| Melting Property (melting temperature of composite solder) | Tensile strength | Wetting power | |
| Nanoscale Ag particle (20 nm) | 220℃-223℃ | 54MPa | 4.0mN |
| Micron Ag (1 μm) | 240℃-245℃ | 37MPa | 3.2mN |
The data analysis in table 2 shows that the addition of nano-sized Ag particles can effectively improve the melting property, mechanical properties and wettability compared with the addition of micro-sized Ag particles.
FIG. 9 shows an IMC layer Ag of the lower joint with added nano Ag particles3The microstructure diagram of Sn compound is that as can be observed from FIG. 9, the nanometer-sized Ag particles generate nanometer-sized Ag under the Sn-rich environment due to the heat as the driving force3Sn compound, thisNano Ag3Sn particles are spherical and uniform in size, and the average particle size of the nano particles, namely nano Ag, is calculated by utilizing a grid method3The average particle size of Sn particles is about 60nm to 70 nm. Moreover, as the size of Ag particles reaches the nanometer level, the nano particles have higher surface energy, and in the crystallization process of the solder, the nano particles can be adsorbed around the IMC at the initial formation stage, so that the further formation and growth of the IMC are inhibited, and the strength of the welding joint is improved.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and do not limit the protection scope of the claims. It will be understood by those skilled in the art that various modifications and equivalents may be made to the embodiments of the present invention without departing from the spirit and scope of the invention.
Claims (6)
1. A packaging method for a non-high temperature connection temperature sensor is characterized by comprising the following main steps:
(1) adding the SnAgCu series lead-free solder and the nano-scale Ag powder into rosin alcohol, stirring and mixing to obtain a composite solder, wherein the mass percent of Ag in the composite solder is 40-60%;
(2) coating a layer of the composite brazing filler metal on the surface, to be connected, of a substrate of an electronic device, and connecting the substrate;
(3) heating the connected substrates to 220-280 ℃ under a vacuum condition, and carrying out heat preservation treatment for 25-40 min;
(4) applying a rotating magnetic field while performing heat preservation treatment, wherein the magnetic induction intensity of the magnetic field is 300 mT-340 mT;
(5) and (6) cooling.
2. The packaging method of the non-high temperature connection temperature sensor as claimed in claim 1, wherein in the step (2), the content of Ag element in the prepared composite solder is 40% -60%.
3. The packaging method for the non-high temperature connection temperature sensor as claimed in claim 1, wherein the SnAgCu lead-free solder is Sn3.0Ag0.5Cu lead-free solder.
4. The packaging method of claim 1, wherein in step (3), a bonding pressure of 0-0.1MPa is applied to the substrate joint under vacuum.
5. The packaging method of claim 1, wherein in step (3), the degree of vacuum is less than 2 x 10-3Heating is started after Pa, and the heating mode is resistance radiation heating.
6. The packaging method of the non-high temperature connection temperature sensor, according to the claim 1, characterized in that in the step (4), the permanent magnet is used to apply the rotating magnetic field, and the rotating speed of the permanent magnet is 1000 r/min.
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| CN120269124A (en) * | 2025-06-10 | 2025-07-08 | 西北工业大学 | DD10 single crystal superalloy connection method based on interlayer and magnetic field assistance |
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| CN101844260A (en) * | 2010-05-13 | 2010-09-29 | 重庆大学 | Method and device for performing electric magnetization resistance welding-braze welding compounding on dissimilar materials |
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Application publication date: 20211221 |