CN113471232B - Detection device based on deep silicon detector module - Google Patents

Abstract

The invention provides a detection device based on a deep silicon detector module, which comprises a plurality of detector modules which are tiled, wherein each detector module comprises a plurality of detector modules which are stacked, and each detector module comprises a plurality of detector chips which are stacked; the detector chip is provided with a light receiving side facing the X-ray light source, and is also provided with a plurality of photoelectric units divided by the ASIC chip and the silicon micro-strip; the input pin of the ASIC chip is connected with the photoelectric unit; the detector chip in each detector module comprises a master chip and a plurality of slave chips; the output pins of the ASIC chips of the slave chips are led to the master chip, and the master output bonding pads of the master chip are connected with the output pins of the ASIC chips of each chip; each detector module is tiled around the X-ray light source, and the distance between each light receiving unit surface and the X-ray light source is equal. The invention realizes the single-layer arrangement of the deep silicon detector modules, is beneficial to reading, is convenient for assembly, avoids optical crosstalk and has clear imaging.

Description

A detection device based on deep silicon detector module

Technical field

The invention belongs to the field of detector technology, and specifically relates to a detection device based on a deep silicon detector module.

Background technique

Currently, commercial CT detectors use scintillator detectors. The signal reception and transmission process involves the process of converting X-rays into visible light, and then the visible light into electrical signals, ultimately forming an image.

The main shortcomings of traditional CT detectors are as follows: (1) There is a divergence problem in the visible light transmission process, which affects the clarity of imaging. It is currently difficult to improve, and because the detector does not have energy resolution capabilities, it can only display black and white images; ( 2) Affected by the size of the detector, the improvement of spatial resolution has currently encountered a bottleneck; (3) X-ray dose requirements are high and may cause radiation damage to the human body. If the X-ray dose is reduced, the imaging effect will be affected.

The new generation of CT detectors is just starting to use semiconductor detection photon counters, among which cadmium telluride or cadmium zinc telluride detectors are used. However, due to the factors of the material itself, there are also the following problems:

(1) Cadmium zinc telluride and cadmium telluride are compound semiconductor materials. Their crystal structures are imperfect and have defects, and signal collection is slow. When the count rate of traditional CT examination reaches about 10%, it causes "signal accumulation";

(2) Cadmium zinc telluride and cadmium telluride semiconductor materials have polarization phenomena. When they continue to work, the amplitude of the signal collected by the detector will continue to decrease and the stability will be poor.

(3) Cadmium zinc telluride and cadmium telluride semiconductor materials are not pure enough and have high cost, which is not conducive to mass production applications.

(4) The new generation CT developed by GE in the United States using deep silicon technology adopts a staggered arrangement of upper and lower layers, which takes up a lot of space.

This is a shortcoming of the existing technology. Therefore, it is very necessary to provide a detection device based on a deep silicon detector module to address the above-mentioned defects in the existing technology.

Contents of the invention

Regarding the existing technology, the above-mentioned traditional CT detectors have problems with light divergence, image clarity, low spatial resolution due to size, high X-ray dose requirements depending on the imaging effect, and radiation damage to the human body. However, the new generation CT detector signal The present invention provides a detection device based on a deep silicon detector module to solve the problems of the existing technology.

In order to solve the above problems of the prior art, the present invention provides the following technical solutions:

A detection device based on deep silicon detector modules, including several deep silicon detector modules, each deep silicon detector module including several deep silicon detector modules, each deep silicon detector module including several detector chips ;

One side of the detector chip is provided with a light-receiving side, and the light-receiving side faces the X-ray light source. The surface of the detector chip is provided with an AS IC chip and a number of silicon micro-strips. Each silicon micro-strip extends along the light-receiving side toward the inside of the detector chip, and It is divided into several photoelectric units along the X-ray incident direction; the input pin of the ASIC chip is connected to one photoelectric unit correspondingly;

Detector chips in the same deep silicon detector module are stacked, the light-receiving side of each detector chip is at the same distance from the X-ray light source, and the light-receiving side of the detector chip in the same deep silicon detector module forms a light-receiving arc surface; each The detector chip in the deep silicon detector module includes a master chip and a slave chip, and the number of master chips is one;

The output pins of the AS IC chip of the slave chip are led to the master chip. The master chip is provided with a main output pad. The main output pad is connected to the output pins of the ASIC chip of the master chip and the output pins of the AS IC chip of the slave chip. ;

The deep silicon detector modules in the same deep silicon detector module are stacked, each light-receiving arc surface is at the same distance from the X-ray light source, and each light-receiving arc surface in the same deep silicon detector module forms a light-receiving unit surface;

Each deep silicon detector module is arranged flat around the X-ray light source. The distance between each light-receiving unit surface and the X-ray light source is equal, and each light-receiving unit surface forms a light-receiving surface.

Further, the detector chip uses silicon wafer as the base material, the purity of the silicon wafer is greater than the set threshold, and the thickness of the silicon wafer is ≥200 μm. The use of high-purity silicon wafers as the base material of the detector chip avoids the problems of cadmium zinc telluride and cadmium telluride semiconductor materials used in first-generation CT, which are of insufficient purity and high cost, and are not conducive to mass production applications.

Further, the detector chip is in the shape of an isosceles trapezoid, and the light-receiving side is set at the short base of the isosceles trapezoid. The length of the short base of each detector chip is equal, and the corresponding base angles are equal;

Each detector chip in the same deep silicon detector module is aligned with the short bottom edge and arranged in a stack;

Each deep silicon detector module has the same structure. Each detector chip in the same deep silicon detector module is aligned with the short bottom edge and arranged in a stack;

Each deep silicon detector module has the same structure, and the deep silicon detector chips located on the same layer are connected in sequence by the waist of an isosceles trapezoid. Adjacent detector chips are set at an angle to achieve complete fit between the light-receiving sides of the two detector chips. The detector chips are in the shape of an isosceles trapezoid, which facilitates the connection of the deep silicon detector modules with the waist of the isosceles trapezoid and facilitates close assembly. .

Further, the detector chips of each slave chip have the same structure, and the length of the detector chip of the master chip is greater than the length of the slave detector chip;

The main output pad is set in the area where the detector chip of the master chip is staggered from the detector chip of the slave chip, and is set on the long bottom edge of the isosceles trapezoid of the detector chip of the master chip;

A readout PCB is also provided on the long bottom edge of the detector chip of the main chip. A readout pad is provided on the readout PCB. The main output pad and the readout pad are connected through bonded aluminum wires. By stacking detector chips, the detector chips are integrated. The main output pad is only set on the detector chip of the main chip. By connecting to the main output pad, a deep silicon detector can be realized by reading on one side. Reading of data collected by the photoelectric unit of each detector chip of the module.

Further, the photoelectric units of each detector chip are located in the middle area of the detector chip, and the upper and lower layers of the photoelectric units of the stacked detector chips are aligned;

The AS IC chip of the slave chip is placed on both sides of the photoelectric unit, and the AS IC chip of the master chip is placed on the lower end of the photovoltaic unit away from the light-receiving side;

Each detector chip is provided with an opening, and the output pin of the AS IC chip of the slave chip is connected to the main output pad of the master chip through a bonded aluminum wire passing through the opening. The opening and bonding aluminum wire ensure the realization of cross-layer wiring from the detector chip of the slave chip to the detector chip of the main chip.

Further, a light-shielding layer is provided between adjacent detector chips of the same deep silicon detector module;

The light-shielding layer covers the entire area where the photovoltaic unit is located;

The light-shielding layer is made of metal sheets made of tungsten, nickel or titanium, or metal sheets of two or three mixed materials. The light-shielding layer prevents Compton-scattered X-rays from being incident on adjacent detector chips or adjacent deep silicon detector modules, causing optical crosstalk.

Further, each silicon microstrip on the detector chip is in a concentric radiating shape with the X-ray light source as the center;

The angle between adjacent silicon microstrips is set according to the distance between the X-ray light source and the light-receiving side. The concentric radiating silicon micro-strips are divergent, which is more conducive to the collection of X-rays.

Further, the silicon micro-strips are in the shape of trapezoidal strips, wherein the narrow end of the silicon micro-strips is arranged on the light-receiving side;

Each silicon microstrip is divided into N segments of photovoltaic units, where N≥2;

The N-segment photovoltaic units of the same silicon microstrip grow sequentially along the X-ray incident direction. The length and N value of each segment of the photovoltaic unit are set according to the absorption efficiency of the silicon microstrip. The absorption efficiency is based on the X-ray incident intensity and the count of the AS IC chip. rate calculation. Silicon microstrips in the shape of trapezoidal strips can effectively prevent X-rays from passing out of the area where the photovoltaic unit is located and avoid optical crosstalk.

Further, both the light-receiving arc surface and the light-receiving unit surface are arc surfaces or torus surfaces with the X-ray light source as the center;

The angle between adjacent detector chips in the same deep silicon detector module and the angle between adjacent deep silicon detector modules are set according to the distance between the X-ray light source and the light-receiving side;

The light-receiving surface is an arc surface or a torus surface with the X-ray light source as the center;

The angle between the isosceles trapezoid of the detector chip is set according to the distance between the X-ray source and the light-receiving side.

Furthermore, the lengths of the connection lines between the photoelectric units equidistant from the light-receiving side of the same detector chip and the input pins of the ASIC chip are equal. The connection line from the photoelectric unit to the input pin of the AS IC chip is carried out between the photoelectric units, and the equal length of the connection lines ensures the sensitivity of the photoelectric unit receiving signals and eliminates noise.

The beneficial effects of the present invention are:

The detection device based on the deep silicon detector module provided by the invention is composed of multiple detector chips to form a deep silicon detector module, and then multiple pieces of deep silicon detector modules are used to form a deep silicon detector module. Finally, the deep silicon detector module is The detector modules are tiled to form a CT or PET detector. When achieving the same pixels, the deep silicon detector module used is minimized, which is more convenient for assembly; the light-receiving arc surface of each deep silicon detector module is located at the center of the circle with the X-ray light source. On the same arc surface, the receiving X-ray distance is equal, there is no optical path difference, the imaging is clearer, and the deep silicon detector module is arranged in a single layer, smaller in size; the silicon micro-strips on the detector chip are divergent, which is more conducive to X-rays are collected, and each silicon microstrip is continuously widened in a trapezoidal shape from the input end to the exit end, which can effectively prevent X-rays from passing out of the area of the photovoltaic unit and avoid optical crosstalk.

In addition, the design principle of the invention is reliable, the structure is simple, and it has very broad application prospects.

It can be seen that compared with the prior art, the present invention has outstanding substantive features and significant progress, and the beneficial effects of its implementation are also obvious.

Description of the drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those of ordinary skill in the art, It is said that other drawings can also be obtained based on these drawings without exerting creative work.

Figure 1 is a schematic structural diagram of a detection device based on a deep silicon detector module of the present invention;

Figure 2 is a schematic structural diagram of the deep silicon detector module of the present invention;

Figure 3 is a schematic structural diagram 2 of the deep silicon detector module of the present invention;

Figure 4 is a schematic structural diagram of the detector chip of the first slave chip of the present invention;

Figure 5 is a schematic structural diagram of the detector chip of the main chip of the present invention;

Figure 6 is a schematic structural diagram of the detector chip of the second slave chip of the present invention;

Figure 7 shows the arrangement of CT detectors in the upper and lower layers of the prior art;

In the figure, 1-deep silicon detector module; 2-deep silicon detector module; 3-X-ray light source; 4-ASIC chip; 5-photoelectric unit; 6-readout PCB; 7-opening; 8.1-main The detector chip of the first slave piece; 8.2 - The detector chip of the first slave piece; 8.3 - The detector chip of the second slave piece.

Detailed ways

In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts should fall within the scope of protection of the present invention.

Example 1:

As shown in Figures 1, 2, 3, 4, 5 and 6, the present invention provides a detection device based on a deep silicon detector module, including a plurality of deep silicon detector modules 1, each deep The silicon detector module 1 includes a plurality of deep silicon detector modules 2, and each deep silicon detector module 2 includes a plurality of detector chips;

One side of the detector chip is provided with a light-receiving side, and the light-receiving side faces the X-ray light source 3. An ASIC chip 4 and a number of silicon micro-strips are provided on the surface of the detector chip. Each silicon micro-strip extends along the light-receiving side toward the inside of the detector chip. And it is divided into several photoelectric units 5 along the X-ray incident direction; the input pin of the ASIC chip 4 is connected to one photoelectric unit 5 correspondingly;

The detector chips in the same deep silicon detector module 2 are stacked, the light-receiving side of each detector chip is at the same distance from the X-ray light source, and the light-receiving side of the detector chip in the same deep silicon detector module 2 forms a light-receiving arc surface; The detector chip in each deep silicon detector module 2 includes a master chip and a slave chip, and the number of master chips is one;

The output pins of the AS IC chip 4 of the slave chip are led to the master chip. The master chip is provided with a main output pad. The main output pad is connected to the output pins of the AS IC chip 4 of the master chip and the output of the ASIC chip 4 of the slave chip. pin connection;

The deep silicon detector modules 2 in the same deep silicon detector module 1 are stacked, each light-receiving arc surface is equidistant from the X-ray light source 3, and each light-receiving arc surface in the same deep silicon detector module 1 forms a light-receiving unit surface;

Each deep silicon detector module 1 is arranged flatly around the X-ray light source 3. The distance between each light-receiving unit surface and the X-ray light source 3 is equal, and each light-receiving unit surface forms a light-receiving surface.

Example 2:

As shown in Figures 1, 2, 3, 4, 5 and 6, the present invention provides a detection device based on a deep silicon detector module, including a plurality of deep silicon detector modules 1, each deep The silicon detector module 1 includes a plurality of deep silicon detector modules 2, and each deep silicon detector module 2 includes a plurality of detector chips; the detector chips use silicon wafers as base materials, the purity of the silicon wafers is greater than a set threshold, and the silicon wafers Thickness ≥200μm;

One side of the detector chip is provided with a light-receiving side, and the light-receiving side faces the X-ray light source 3. An ASIC chip 4 and a number of silicon micro-strips are provided on the surface of the detector chip. Each silicon micro-strip extends along the light-receiving side toward the inside of the detector chip. And it is divided into several photoelectric units 5 along the X-ray incident direction; the input pin of the ASIC chip 4 is connected to one photoelectric unit 5; the photoelectric unit 5 in the same detector chip that is the same distance from the light-receiving side is the same as the input pin of the ASIC chip 4. The connecting lines are of equal length;

The detector chips in the same deep silicon detector module 2 are stacked, the light-receiving side of each detector chip is at the same distance from the X-ray light source, and the light-receiving side of the detector chip in the same deep silicon detector module 2 forms a light-receiving arc surface; The detector chip in each deep silicon detector module 2 includes a master chip and a slave chip, and the number of master chips is one;

The output pins of the AS IC chip 4 of the slave chip are led to the master chip. The master chip is provided with a main output pad. The main output pad is connected to the output pins of the AS IC chip 4 of the master chip and the output of the ASIC chip 4 of the slave chip. pin connection;

The deep silicon detector modules 2 in the same deep silicon detector module 1 are stacked, each light-receiving arc surface is equidistant from the X-ray light source 3, and each light-receiving arc surface in the same deep silicon detector module 1 forms a light-receiving unit surface;

Each deep silicon detector module 1 is arranged flat around the X-ray light source 3, the distance between each light-receiving unit surface and the X-ray light source 3 is equal, and each light-receiving unit surface forms a light-receiving surface;

The light-receiving arc surface and the light-receiving unit surface are arc surfaces or torus surfaces with the X-ray light source 3 as the center;

The angle between adjacent detector chips in the same deep silicon detector module 2 and the angle between adjacent deep silicon detector modules 2 are set according to the distance between the X-ray light source 3 and the light-receiving side;

The light-receiving surface is an arc surface or a torus surface with the X-ray light source 3 as the center;

The detector chip is in the shape of an isosceles trapezoid, and the light-receiving side is set at the short base of the isosceles trapezoid. The length of the short base of each detector chip is equal, and the corresponding base angles are equal; the included angle of the isosceles trapezoid of the detector chip Set according to the distance between the X-ray light source 3 and the light-receiving side;

Each detector chip in the same deep silicon detector module 2 is aligned with the short bottom edge and arranged in a stack;

Each deep silicon detector module 2 has the same structure, and each detector chip in the same deep silicon detector module 2 is aligned with the short bottom edge and arranged in a stack;

Each deep silicon detector module 1 has the same structure, and the detector chips located on the same layer are connected in sequence by the waist of an isosceles trapezoid;

The detector chips of each slave chip have the same structure, and the length of the detector chip of the master chip is greater than the length of the slave detector chip;

The main output pad is set in the area where the detector chip of the master chip is staggered from the detector chip of the slave chip, and is set on the long bottom edge of the isosceles trapezoid of the detector chip of the master chip;

A readout PCB 6 is also provided on the long bottom edge of the detector chip of the main chip, and a readout pad is provided on the readout PCB 6. The main output pad and the readout pad are connected through bonding aluminum wires;

The photoelectric unit 5 of each detector chip is located in the middle area of the detector chip, and the photoelectric units 5 of the stacked detector chips are aligned on the upper and lower layers;

The AS IC chip 4 of the slave chip is disposed on both sides of the photoelectric unit 5, and the AS IC chip 4 of the master chip is disposed on one end of the lower part of the photoelectric unit 5 away from the light-receiving side;

Each detector chip is provided with an opening 7, and the output pin of the ASIC chip 4 of the slave chip is connected to the main output pad of the master chip after passing through the opening 7 with a bonded aluminum wire;

A light-shielding layer is provided between adjacent detector chips of the same deep silicon detector module 1;

The light-shielding layer covers the entire area where the photovoltaic unit 5 is located;

The light-shielding layer is made of metal sheets made of tungsten, nickel or titanium, or two or three mixed metal sheets;

Each silicon microstrip on the detector chip is in a concentric radiating shape with the X-ray light source 3 as the center;

The angle between adjacent silicon micro-strips is set according to the distance between the X-ray light source 3 and the light-receiving side;

The silicon micro-strips are in the shape of trapezoidal strips, in which the narrow end of the silicon micro-strips is set on the light-receiving side;

Each silicon microstrip is divided into N segments of photovoltaic units 5, where N≥2;

The N-segment photovoltaic units 5 of the same silicon micro-strip grow sequentially along the X-ray incident direction. The length and N value of each segment of the photovoltaic unit 5 are set according to the absorption efficiency of the silicon micro-strip. The absorption efficiency is determined according to the X-ray incident intensity and the ASIC chip 4 count rate calculation.

Example 3:

As shown in Figure 2, Figure 3, Figure 4, Figure 5 and Figure 6, in the above-mentioned Embodiment 2, a deep silicon detector module 2 has three detector chips as an example, including the detector chip of the main chip. 8.1, the detector chip 8.2 of the first slave chip and the detector chip 8.3 of the second slave chip;

Three detector chips are stacked together. The detector chip 8.1 of the master chip is located in the middle. The detector chip 8.2 of the first slave chip is located on the upper layer of the detector chip 8.1 of the master chip. The detector chip 8.3 of the second slave chip is located on the master chip. The lower layer of the detector chip 8.1, and the light-receiving sides of the three detector chips are aligned, the photoelectric units 5 of the three detector chips are aligned, and a light-shielding layer is provided between adjacent photoelectric units 5;

The output pins of the ASIC chip 4 of the detector chip 8.2 of the first slave chip and the output pins of the ASIC chip 4 of the detector chip 8.3 of the second slave chip are both led to the master chip through the bonding aluminum wire through opening 7 The detector chip 8.1 is connected to the main output pad on the detector chip 8.1 of the main chip;

The detector chip 8.2 of the first slave chip and the detector chip 8.3 of the second slave chip are both arranged at an angle with the detector chip 8.1 of the master chip;

The detector chip 8.1 of the master chip, the detector chip 8.2 of the first slave chip and the detector chip 8.3 of the second slave chip are stacked to form a deep silicon detector module 2. As shown in Figure 1, it is composed of seven deep silicon detector chips. The detector modules 2 are stacked to form a deep silicon detector module 1, and then nine deep silicon detector modules 1 are tiled around the X-ray light source 3 to form a CT or PET detector.

Although the present invention has been described in detail with reference to the accompanying drawings in conjunction with preferred embodiments, the present invention is not limited thereto. Without departing from the spirit and essence of the invention, those of ordinary skill in the art can make various equivalent modifications or substitutions to the embodiments of the invention, and these modifications or substitutions should be within the scope of the invention/any Those skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention, and they should all be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims (8)

1. A detection device based on a deep silicon detector module, characterized in that it includes a plurality of deep silicon detector modules, each deep silicon detector module includes a plurality of deep silicon detector modules, and each deep silicon detector The module includes several detector chips; A light-receiving side is provided on one side of the detector chip, and the light-receiving side faces the X-ray light source. An ASIC chip and a number of silicon micro-strips are provided on the surface of the detector chip. Each silicon micro-strip extends along the light-receiving side to the inside of the detector chip, and along the It is divided into several photoelectric units along the X-ray incident direction; the input pin of the ASIC chip is connected to one photoelectric unit correspondingly; Detector chips in the same deep silicon detector module are stacked, the light-receiving side of each detector chip is at the same distance from the X-ray light source, and the light-receiving side of the detector chip in the same deep silicon detector module forms a light-receiving arc surface; each The detector chip in the deep silicon detector module includes a master chip and a slave chip, and the number of master chips is one; The output pins of the ASIC chip of the slave chip are led to the master chip, and the master chip is provided with a main output pad. The main output pad is connected to the output pins of the ASIC chip of the master chip and the output pins of the ASIC chip of the slave chip; The deep silicon detector modules in the same deep silicon detector module are stacked, each light-receiving arc surface is at the same distance from the X-ray light source, and each light-receiving arc surface in the same deep silicon detector module forms a light-receiving unit surface; Each deep silicon detector module is arranged flat around the X-ray light source, each light-receiving unit surface is at the same distance from the X-ray light source, and each light-receiving unit surface forms a light-receiving surface; The detector chip is in the shape of an isosceles trapezoid, and the light-receiving side is set at the short base of the isosceles trapezoid. The length of the short base of each detector chip is equal, and the corresponding base angles are equal; Each detector chip in the same deep silicon detector module is aligned with the short bottom edge and arranged in a stack; Each deep silicon detector module has the same structure. Each detector chip in the same deep silicon detector module is aligned with the short bottom edge and arranged in a stack; Each deep silicon detector module has the same structure, and the deep silicon detector chips located on the same layer are connected in sequence by the waist of an isosceles trapezoid; The silicon micro-strips are in the shape of trapezoidal strips, wherein the narrow end of the silicon micro-strips is arranged on the light-receiving side; Each silicon microstrip is divided into N segments of photovoltaic units, where N≥2; The N-segment photovoltaic units of the same silicon microstrip grow sequentially along the X-ray incident direction. The length and N value of each segment of the photovoltaic unit are set according to the absorption efficiency of the silicon microstrip. The absorption efficiency is based on the X-ray incident intensity and the count rate of the ASIC chip. calculate. 2. The detection device based on the deep silicon detector module according to claim 1, characterized in that the detector chip uses silicon wafer as the base material, the purity of the silicon wafer is greater than the set threshold, and the thickness of the silicon wafer is ≥ 200 μm. 3. The detection device based on a deep silicon detector module as claimed in claim 1, characterized in that the detector chips of each slave chip have the same structure, and the length of the detector chip of the master chip is greater than the length of the slave detector chip; The main output pad is set in the area where the detector chip of the master chip is staggered from the detector chip of the slave chip, and is set on the long bottom edge of the isosceles trapezoid of the detector chip of the master chip; A readout PCB is also provided on the long bottom edge of the detector chip of the main chip. A readout pad is provided on the readout PCB. The main output pad and the readout pad are connected through bonded aluminum wires. 4. The detection device based on the deep silicon detector module according to claim 3, characterized in that the photoelectric unit of each detector chip is located in the middle area of the detector chip, and the photoelectric units of the stacked detector chips are on the upper and lower layers. Alignment; The ASIC chip of the slave chip is placed on both sides of the photoelectric unit, and the ASIC chip of the master chip is placed on the lower end of the photovoltaic unit away from the light-receiving side; Each detector chip is provided with an opening, and the output pin of the ASIC chip of the slave chip is connected to the main output pad of the master chip through a bonded aluminum wire through the opening. 5. The detection device based on a deep silicon detector module as claimed in claim 3, wherein a light-shielding layer is provided between adjacent detector chips of the same deep silicon detector module; The light-shielding layer covers the entire area where the photovoltaic unit is located; The light-shielding layer is made of metal sheets made of tungsten, nickel or titanium, or metal sheets of two or three mixed materials. 6. The detection device based on the deep silicon detector module according to claim 3, characterized in that each silicon microstrip on the detector chip is in a concentric radiating shape with the X-ray light source as the center; The angle between adjacent silicon microstrips is set according to the distance between the X-ray light source and the light-receiving side. 7. The detection device based on the deep silicon detector module of claim 1, wherein the light-receiving arc surface and the light-receiving unit surface are arc surfaces or torus surfaces with the X-ray light source as the center; The angle between adjacent detector chips in the same deep silicon detector module and the angle between adjacent deep silicon detector modules are set according to the distance between the X-ray light source and the light-receiving side; The light-receiving surface is an arc surface or a torus surface with the X-ray light source as the center; The angle between the isosceles trapezoid of the detector chip is set according to the distance between the X-ray source and the light-receiving side. 8. The detection device based on a deep silicon detector module as claimed in claim 1, characterized in that the length of the connection line between the photoelectric unit and the input pin of the ASIC chip in the same detector chip that is equidistant from the light-receiving side is the same.