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CN113248258B - Silicon carbide-based composite ceramic material with high spectral selectivity and preparation method and application thereof - Google Patents

Silicon carbide-based composite ceramic material with high spectral selectivity and preparation method and application thereof Download PDF

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CN113248258B
CN113248258B CN202110535695.3A CN202110535695A CN113248258B CN 113248258 B CN113248258 B CN 113248258B CN 202110535695 A CN202110535695 A CN 202110535695A CN 113248258 B CN113248258 B CN 113248258B
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silicon carbide
tib
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黄政仁
祝明
陈健
郑嘉棋
陈文辉
马宁宁
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Shanghai Institute of Ceramics of CAS
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Abstract

The invention relates to a silicon carbide-based composite ceramic material with high spectral selectivity and a preparation method and application thereof; the silicon carbide-based composite ceramic material has a main phase of SiC and a second phase of TiB 2 And/or ZrB 2 (ii) a Preferably, the main phase content is 50vol% to 100vol% in the main phase and the second phase; the second phase content is 0vol% to 50 vol%.

Description

一种具有高光谱选择性的碳化硅基复相陶瓷材料及其制备方 法和应用A kind of silicon carbide-based composite ceramic material with high spectral selectivity and its preparation method and application

技术领域technical field

本发明涉及一种具有高光谱选择性的碳化硅基复相陶瓷材料及其制备方法和应用,属于太阳能热发电技术领域。The invention relates to a silicon carbide-based composite ceramic material with high spectral selectivity, a preparation method and application thereof, and belongs to the technical field of solar thermal power generation.

背景技术Background technique

能源枯竭和能源利用过程中对环境造成污染是当今人类亟需解决的问题。太阳能作为一种新型清洁能源,取之不尽用之不竭,在解决能源危机问题上起到举足轻重的作用。Energy depletion and environmental pollution in the process of energy utilization are urgent problems for human beings today. As a new type of clean energy, solar energy is inexhaustible and plays a pivotal role in solving the energy crisis.

通过太阳能热发电技术可以有效地将太阳能转化为可供人类使用的电能。在这其中,热吸收器是太阳能热发电系统的关键部件,它将太阳辐射的能量转移到传热流体中,后者将用于热力循环发电。然而,由于实际传热过程中的热损耗严重(热辐射为主,也有热传导及对流),吸收器接收的太阳能并没有完全转移到传热流体上。因此,研制具有高太阳能吸收系数α(0.3-2.5μm)同时具有低热辐射率ε(2.5-16μm)的吸收器材料是太阳能热发电技术需要解决的重要问题之一。Solar thermal power generation technology can effectively convert solar energy into electrical energy that can be used by human beings. In this, the heat absorber is the key component of the solar thermal power generation system, which transfers the energy of solar radiation into the heat transfer fluid, which will be used for the thermodynamic cycle to generate electricity. However, due to the serious heat loss in the actual heat transfer process (mainly heat radiation, but also heat conduction and convection), the solar energy received by the absorber is not completely transferred to the heat transfer fluid. Therefore, the development of absorber materials with high solar absorption coefficient α (0.3-2.5 μm) and low thermal emissivity ε (2.5-16 μm) is one of the important problems to be solved in solar thermal power generation technology.

碳化硅陶瓷具有很高的太阳能吸收系数,同时其具有热导率高,高温抗氧化性能好,高温力学性能优良等优异性能使其可以作为太阳能热吸收材料。但是碳化硅陶瓷具有的高热辐射性能将吸收能量以热辐射的形式散失,这使得其在使用过程中的实际效率大打折扣。因此提高碳化硅陶瓷的光谱选择性α/ε具有重要意义。Silicon carbide ceramics have high solar absorption coefficient, high thermal conductivity, good high temperature oxidation resistance, excellent high temperature mechanical properties and other excellent properties, which make them suitable for solar heat absorption materials. However, the high thermal radiation properties of silicon carbide ceramics will absorb energy and dissipate in the form of thermal radiation, which greatly reduces its actual efficiency during use. Therefore, it is of great significance to improve the spectral selectivity α/ε of silicon carbide ceramics.

发明内容SUMMARY OF THE INVENTION

针对上述提及的碳化硅陶瓷应用于太阳能热吸收材料时光谱选择性过低的问题,本发明提供了一种具有高光谱选择性的碳化硅复相陶瓷材料及其制备方法和应用。In view of the problem that the spectral selectivity of the silicon carbide ceramics mentioned above is too low when applied to solar heat absorbing materials, the present invention provides a silicon carbide composite ceramic material with high spectral selectivity and a preparation method and application thereof.

第一方面,本发明提供了一种具有高光谱选择性的碳化硅复相陶瓷材料,所述碳化硅基复相陶瓷材料的主相为SiC,第二相为TiB2和/或ZrB2;优选地,在所述主相和第二相中,主相含量为50vol%-100vol%;第二相含量为0vol%-50vol%。In a first aspect, the present invention provides a silicon carbide composite ceramic material with high spectral selectivity, wherein the main phase of the silicon carbide-based composite ceramic material is SiC, and the second phase is TiB 2 and/or ZrB 2 ; Preferably, in the main phase and the second phase, the content of the main phase is 50vol%-100vol%; the content of the second phase is 0vol%-50vol%.

选择TiB2和ZrB2作为第二相材料对碳化硅陶瓷的光谱选择性进行调节是因为其具有极低的红外辐射率。当SiC与其进行复合时可以综合SiC的高太阳能吸收率、高导热、优异的抗氧化性能等优势和第二相的低红外辐射率,从而制备得到综合性能优良的高光谱选择性太阳能吸热体材料。TiB 2 and ZrB 2 were chosen as the second phase materials to tune the spectral selectivity of SiC ceramics because of their extremely low infrared emissivity. When SiC is compounded with it, the advantages of high solar absorptivity, high thermal conductivity, and excellent anti-oxidation properties of SiC and the low infrared emissivity of the second phase can be combined to prepare a high-spectrum selective solar heat absorber with excellent comprehensive properties. Material.

较佳地,所述碳化硅基复相陶瓷材料还包括B-C体系烧结助剂;所述主相和第二相的含量为90-96wt%;所述B-C体系烧结助剂占总原材料质量比为4-10wt%,各组分之和为100%。Preferably, the silicon carbide-based multiphase ceramic material further includes a B-C system sintering aid; the content of the main phase and the second phase is 90-96 wt %; the mass ratio of the B-C system sintering aid to the total raw materials is: 4-10wt%, the sum of each component is 100%.

纯固相碳化硅陶瓷的光谱选择性为1.424。当0<第二相的含量≤5vol%时,因为在11-13μm波段,SiC的发射率极低,而TiB2/ZrB2的发射率相对偏高,这使得少量(0-5vol%)第二相复合之后,复合材料发射率呈现上升,从而导致了选择性的降低。当掺入5vol%TiB2时,复相陶瓷的光谱选择性为1.403;当掺入5vol%ZrB2时,复相陶瓷的光谱选择性为1.398,均相较于纯固相碳化硅陶瓷出现降低。当5vol%<第二相的含量≤50vol%时,复相陶瓷的光谱选择性呈现上升趋势。具体地,当第二相为TiB2时,其光谱选择性随着掺量增加从1.403增加到1.632;当第二相为ZrB2时,其光谱选择性随着掺量增加从1.398提升到1.549。The spectral selectivity of pure solid-phase silicon carbide ceramics is 1.424. When 0<the content of the second phase≤5vol%, because in the 11-13μm band, the emissivity of SiC is extremely low, while the emissivity of TiB 2 /ZrB 2 is relatively high, which makes a small amount (0-5vol%) of the first phase After the two-phase recombination, the emissivity of the composite material increases, resulting in a decrease in selectivity. When 5vol% TiB 2 was incorporated, the spectral selectivity of the multiphase ceramics was 1.403; when 5vol% ZrB 2 was incorporated, the spectral selectivity of the multiphase ceramics was 1.398, both of which were lower than those of pure solid-phase silicon carbide ceramics. . When 5vol%<the content of the second phase≤50vol%, the spectral selectivity of the multiphase ceramics showed an upward trend. Specifically, when the second phase is TiB 2 , its spectral selectivity increases from 1.403 to 1.632 with the increase of the dosage; when the second phase is ZrB 2 , its spectral selectivity increases from 1.398 to 1.549 with the increase of dosage .

较佳地,所制成的SiC-TiB2复相陶瓷材料的光谱选择性α/ε为:1.403-1.632;所制成的SiC-ZrB2复相陶瓷材料的光谱选择性α/ε为:1.398-1.549。Preferably, the spectral selectivity α/ε of the prepared SiC-TiB 2 multiphase ceramic material is: 1.403-1.632; the spectral selectivity α/ε of the prepared SiC-ZrB 2 multiphase ceramic material is: 1.398-1.549.

第二方面,本发明提供了上述具有高光谱选择性的碳化硅复相陶瓷材料的制备方法,包括:将原料SiC粉体、TiB2和/或ZrB2粉体、B-C体系烧结助剂加入无水乙醇中,再加入粘结剂,球磨得到浆料;将所得浆料烘干、破碎、造粒后得到混合粉体;将混合粉体经干压成型,再经过冷等静压、负压脱蜡和常压烧结得到复合陶瓷块体。In a second aspect, the present invention provides a method for preparing the above-mentioned silicon carbide composite ceramic material with high spectral selectivity, comprising: adding raw SiC powder, TiB 2 and/or ZrB 2 powder, and BC system sintering aid to no Add binder to water ethanol and ball mill to obtain slurry; dry, crush and granulate the obtained slurry to obtain mixed powder; dry the mixed powder to form, and then go through cold isostatic pressing and negative pressure Dewaxing and atmospheric sintering to obtain composite ceramic blocks.

较佳地,所述SiC粉体的粒径为0.5-1μm;所述TiB2粉体的粒径为1-3μm;所述ZrB2粉体的粒径为1-3μm。粉体粒径越细,越有利于烧结致密化,能够减少气孔含量,提升样品的力学性能和热导率等。Preferably, the particle size of the SiC powder is 0.5-1 μm; the particle size of the TiB 2 powder is 1-3 μm; the particle size of the ZrB 2 powder is 1-3 μm. The finer the particle size of the powder, the more conducive to sintering and densification, which can reduce the content of pores and improve the mechanical properties and thermal conductivity of the sample.

较佳地,所述B-C体系烧结助剂中,B源为B4C、B粉、硼酸中的至少一种;所述C源为酚醛树脂、果糖、无定形碳、碳黑中的至少一种。Preferably, in the BC system sintering aid, the B source is at least one of B 4 C, B powder, and boric acid; the C source is at least one of phenolic resin, fructose, amorphous carbon, and carbon black. kind.

较佳地,所述粘结剂为酚醛树脂、PVA、PVB中的至少一种。Preferably, the binder is at least one of phenolic resin, PVA and PVB.

较佳地,所述球磨为行星球磨,时间为18-24小时,使得到粉体尽可能均匀、细化,可促进烧结。Preferably, the ball mill is a planetary ball mill, and the time is 18-24 hours, so that the powder is as uniform and refined as possible, which can promote sintering.

较佳地,所述干压成型压力为10-20MPa,保压时间为5-15秒。Preferably, the dry pressing pressure is 10-20 MPa, and the pressure holding time is 5-15 seconds.

较佳地,所述冷等静压压力为150-250MPa,保压时间为1-3分钟。Preferably, the cold isostatic pressing pressure is 150-250 MPa, and the pressure holding time is 1-3 minutes.

较佳地,所述负压脱蜡温度为900-1100℃,保温时间为0.5-2小时。Preferably, the negative pressure dewaxing temperature is 900-1100° C., and the holding time is 0.5-2 hours.

较佳地,所述常压烧结温度为2000-2200℃,优选为2100-2200℃;在最高温度点保温时间为0.5-2小时;所述常压烧结气氛为氩气气氛。Preferably, the normal pressure sintering temperature is 2000-2200°C, preferably 2100-2200°C; the holding time at the highest temperature point is 0.5-2 hours; the normal pressure sintering atmosphere is an argon atmosphere.

第三方面,本发明提供了上述具有高光谱选择性的碳化硅复相陶瓷材料在太阳能热吸收器材料中的应用。In a third aspect, the present invention provides the application of the above-mentioned silicon carbide composite ceramic material with high spectral selectivity in a solar heat absorber material.

随着第二相含量的提升(>5vol%),样品的光谱选择性呈现上升趋势;相同第二相掺量时,TiB2带来的光谱选择性提升大于ZrB2With the increase of the second phase content (>5vol%), the spectral selectivity of the samples showed an upward trend; when the second phase content was the same, the spectral selectivity improvement brought by TiB 2 was greater than that of ZrB 2 .

本发明提供的碳化硅基复相陶瓷具有高太阳能光谱选择性,并且能兼具碳化硅陶瓷固有的高热导率、优异的抗氧化性等优点,可以在太阳能热发电系统中作为太阳能热吸收器材料使用,这突破了其固有的使用范围,即作为结构陶瓷使用。本发明所采用的烧结方法是固相常压烧结法,可以实现大批量的产品生产,为其实际大规模应用提供了基础。The silicon carbide-based composite ceramic provided by the invention has high solar energy spectral selectivity, and can have the advantages of high thermal conductivity and excellent oxidation resistance inherent in silicon carbide ceramics, and can be used as a solar heat absorber in a solar thermal power generation system. Material use, which goes beyond its inherent scope of use, as structural ceramics. The sintering method adopted in the present invention is a solid-phase atmospheric pressure sintering method, which can realize mass production of products and provide a basis for its practical large-scale application.

附图说明Description of drawings

图1示出了不同掺量TiB2和ZrB2的碳化硅基复相陶瓷的光谱选择性。Figure 1 shows the spectral selectivity of SiC-based composite ceramics with different dosages of TiB and ZrB .

具体实施方式Detailed ways

以下结合附图和下述实施方式进一步说明本发明,应理解,下述实施方式仅用于说明本发明,而非限制本发明。The present invention will be further described below with reference to the accompanying drawings and the following embodiments. It should be understood that the following embodiments are only used to illustrate the present invention, but not to limit the present invention.

本发明选用具有低红外发射率的TiB2和ZrB2作为第二相,通过固相烧结来调节碳化硅陶瓷的光谱选择性。并且以碳化硅为主相,能够结合其固有的优良性能,如高热导率、优异的抗氧化性能等,从而制备得到综合性能优异的高光谱选择性太阳能热吸收器材料。并且常压烧结这种烧结方式为产品大规模生产提供基础。The present invention selects TiB 2 and ZrB 2 with low infrared emissivity as the second phase, and adjusts the spectral selectivity of silicon carbide ceramics through solid-phase sintering. And with silicon carbide as the main phase, it can be combined with its inherent excellent properties, such as high thermal conductivity, excellent anti-oxidation properties, etc., so as to prepare a hyperspectral selective solar heat absorber material with excellent comprehensive properties. And the sintering method of atmospheric pressure sintering provides the basis for the mass production of products.

以下示例性地说明本发明提供的具有高太阳能光谱选择性的碳化硅基复相陶瓷制备的方法:The following exemplifies the method for preparing the silicon carbide-based composite ceramic with high solar energy spectral selectivity provided by the present invention:

配制原料、混料、球磨,得到混合浆料。按照高光谱选择性碳化硅陶瓷的配方称取SiC粉体、TiB2和/或ZrB2粉体作为主要原料粉体,并且加入B-C体系原料为烧结助剂。将上述原材料称取完毕后混入无水乙醇中,加入粘结剂,随后加入碳化硅球为球磨介质在行星球磨机上球磨一段时间得到混合浆料。其中,SiC粉体的粒径可为0.5-1μm;TiB2粉体的粒径可为1-3μm;ZrB2粉体的粒径可为1-3μm。上述SiC、TiB2/ZrB2主要原料粉体占总原材料质量比可为90-96wt%,在这部分中,SiC用量占比可为50vol%-100vol%;TiB2/ZrB2用量占比可为0vol%-50vol%。烧结助剂中B源可为B4C、B粉、硼酸中的一种或几种,C源可为酚醛树脂、果糖、无定形碳、碳黑中的一种或几种。上述B-C体系烧结助剂占总原材料质量比可为4-10wt%。粘结剂为酚醛树脂、PVA、PVB中的一种或几种。粘结剂为额外加入,其用量约为原材料质量的2wt%-10wt%。混料时间可为12-24小时,优选为18-24小时,以尽可能获得均匀、细化的粉体,促进烧结过程。Prepare raw materials, mix materials, and ball mill to obtain mixed slurry. According to the formula of hyperspectral selective silicon carbide ceramics, SiC powder, TiB 2 and/or ZrB 2 powder are weighed as the main raw material powder, and the BC system raw material is added as a sintering aid. After the above raw materials are weighed, they are mixed into absolute ethanol, a binder is added, and silicon carbide balls are added as a ball milling medium, and the mixed slurry is obtained by ball milling on a planetary ball mill for a period of time. The particle size of the SiC powder may be 0.5-1 μm; the particle size of the TiB 2 powder may be 1-3 μm; the particle size of the ZrB 2 powder may be 1-3 μm. The above-mentioned SiC and TiB 2 /ZrB 2 main raw material powders can account for 90-96 wt % of the total raw material mass. In this part, the proportion of SiC can be 50 vol % to 100 vol %; the proportion of TiB 2 /ZrB 2 can be 0vol%-50vol%. The B source in the sintering aid can be one or more of B 4 C, B powder and boric acid, and the C source can be one or more of phenolic resin, fructose, amorphous carbon and carbon black. The mass ratio of the above-mentioned BC system sintering aid to the total raw material may be 4-10 wt %. The binder is one or more of phenolic resin, PVA and PVB. The binder is additionally added, and the amount thereof is about 2wt%-10wt% of the mass of the raw material. The mixing time can be 12-24 hours, preferably 18-24 hours, in order to obtain as uniform and refined powder as possible and to promote the sintering process.

烘干、破碎、造粒、干压成型、冷等静压等过程得到坯体样品。其中,烘干条件可为60-100℃下干燥12-36小时。破碎方法可为人工研磨或者机械破碎。造粒方法可为喷雾造粒或过尼龙筛;干压成型压力可为10-20MPa,保压时间可为5-15秒;冷等静压压力可为150-250MPa,保压时间可为1-3分钟。The green body samples are obtained through the processes of drying, crushing, granulation, dry pressing and cold isostatic pressing. Wherein, the drying conditions may be drying at 60-100° C. for 12-36 hours. The crushing method can be manual grinding or mechanical crushing. The granulation method can be spray granulation or nylon sieve; the dry pressing pressure can be 10-20MPa, and the pressure holding time can be 5-15 seconds; the cold isostatic pressing pressure can be 150-250MPa, and the pressure holding time can be 1 -3 minutes.

负压脱蜡、常压烧结后得到高太阳能光谱选择性陶瓷样品。其中,负压脱蜡温度可为900-1100℃,最高温度保温时间可为0.5-2小时;常压烧结温度可为2000-2200℃,优选为2100-2200℃,保温时间可为0.5-2小时。After negative pressure dewaxing and atmospheric pressure sintering, ceramic samples with high solar energy spectrum selectivity were obtained. Among them, the negative pressure dewaxing temperature can be 900-1100 ℃, the maximum temperature holding time can be 0.5-2 hours; the normal pressure sintering temperature can be 2000-2200 ℃, preferably 2100-2200 ℃, the holding time can be 0.5-2 Hour.

将上述陶瓷样品加工成直径为35mm,厚度为3mm的圆片,并将其两面磨平以进行太阳能吸收率(α)和热发射率(ε)的测试,并计算得到光谱选择性(α/ε)。The above ceramic sample was processed into a disc with a diameter of 35mm and a thickness of 3mm, and its two sides were ground to be tested for solar absorptivity (α) and thermal emissivity (ε), and the spectral selectivity (α/ε) was calculated. ε).

测试结果为:纯固相碳化硅陶瓷的光谱选择性为1.424。当0<第二相的含量≤5vol%时,光谱选择性呈现降低趋势。因为在11-13μm波段,SiC的发射率极低,而TiB2/ZrB2的发射率相对偏高,这使得少量(0-5vol%)第二相复合之后,复合材料发射率呈现上升,从而导致了选择性的降低。当掺入5vol%TiB2时,复相陶瓷的光谱选择性为1.403;当掺入5vol%ZrB2时,复相陶瓷的光谱选择性为1.398,均相较于纯固相碳化硅陶瓷出现降低。当5vol%<第二相的含量≤50vol%时,复相陶瓷的光谱选择性呈现上升趋势。具体地,当第二相为TiB2时,其光谱选择性随着掺量增加从1.403增加到1.632;当第二相为ZrB2时,其光谱选择性随着掺量增加从1.398提升到1.549。The test results are: the spectral selectivity of pure solid-phase silicon carbide ceramics is 1.424. When 0<content of the second phase≤5vol%, the spectral selectivity tends to decrease. Because in the 11-13μm band, the emissivity of SiC is extremely low, while the emissivity of TiB 2 /ZrB 2 is relatively high, which makes the emissivity of the composite material increase after a small amount (0-5vol%) of the second phase is recombined, thus increasing the emissivity of the composite material. resulting in a decrease in selectivity. When 5vol% TiB 2 was incorporated, the spectral selectivity of the multiphase ceramics was 1.403; when 5vol% ZrB 2 was incorporated, the spectral selectivity of the multiphase ceramics was 1.398, both of which were lower than those of pure solid-phase silicon carbide ceramics. . When 5vol%<the content of the second phase≤50vol%, the spectral selectivity of the multiphase ceramics showed an upward trend. Specifically, when the second phase is TiB 2 , its spectral selectivity increases from 1.403 to 1.632 with the increase of the dosage; when the second phase is ZrB 2 , its spectral selectivity increases from 1.398 to 1.549 with the increase of dosage .

下面进一步例举实施例以详细说明本发明。同样应理解,以下实施例只用于对本发明进一步说明,不能理解为对本发明保护范围的限制,本领域的技术人员根据本发明的上述内容作出的一些非本质的改进和调整均属于本发明的保护范围。The following further examples are given to illustrate the present invention in detail. It should also be understood that the following examples are only used to further illustrate the present invention, and should not be construed as limiting the scope of protection of the present invention. Some non-essential improvements and adjustments made by those skilled in the art according to the foregoing content of the present invention belong to the present invention. protected range.

实施例1Example 1

制备纯固相烧结碳化硅陶瓷。称取188g SiC粉体为原料,2g B4C粉体为硼源,4g碳黑作为碳源之一,并加入20g酚醛树脂溶液作为粘结剂和碳源,组成所有原材料。将所有原料加入适量无水乙醇中,在行星球磨机上球磨24小时,得到混合浆料。经干燥、破碎、过筛造粒后得到混合粉体。混合粉体以15MPa压力干压成型,保压时间为15秒,然后在200MPa压力下冷等静压,保压时间为3分钟,得到坯体样品。坯体样品在900℃下保温0.5小时进行负压脱蜡,随后在2200℃下保温1小时进行常压烧结,得到陶瓷样品。经测试、计算得到该样品的光谱选择性为1.424。Preparation of pure solid-phase sintered silicon carbide ceramics. Weigh 188g SiC powder as raw material, 2g B 4 C powder as boron source, 4g carbon black as one of carbon sources, and add 20g phenolic resin solution as binder and carbon source to form all the raw materials. All raw materials were added to an appropriate amount of anhydrous ethanol, and ball milled on a planetary ball mill for 24 hours to obtain a mixed slurry. The mixed powder is obtained after drying, crushing, sieving and granulation. The mixed powder was dry-pressed at a pressure of 15 MPa with a holding time of 15 seconds, and then cold isostatically pressed at a pressure of 200 MPa for a holding time of 3 minutes to obtain a green sample. The green sample was kept at 900°C for 0.5 hours for negative pressure dewaxing, and then kept at 2200°C for 1 hour for normal pressure sintering to obtain a ceramic sample. After testing, the calculated spectral selectivity of this sample is 1.424.

实施例2Example 2

制备第二相为5vol%TiB2的碳化硅基复相陶瓷。称取150g SiC粉体,11.1g TiB2为主要原料,即SiC占两者比为95vol%,TiB2占比为5vol%。另外加入1.17g B4C粉体为硼源,3.43g碳黑作为碳源之一,并加入17.14g酚醛树脂溶液作为粘结剂和碳源,组成所有原材料。将所有原料加入适量无水乙醇中,在行星球磨机上球磨24小时,得到混合浆料。经干燥、破碎、过筛造粒后得到混合粉体。混合粉体以15MPa压力干压成型,保压时间为15秒,然后在200MPa压力下冷等静压,保压时间为3分钟,得到坯体样品。坯体样品在900℃下保温0.5小时进行负压脱蜡,随后在2200℃下保温1小时进行常压烧结,得到陶瓷样品。经测试、计算得到该样品的光谱选择性为1.403。A silicon carbide-based multiphase ceramic with a second phase of 5 vol% TiB 2 was prepared. Weigh 150g of SiC powder and 11.1g of TiB 2 as the main raw material, that is, SiC accounts for 95 vol% and TiB 2 accounts for 5 vol%. In addition, 1.17g of B 4 C powder was added as a boron source, 3.43g of carbon black was used as one of the carbon sources, and 17.14g of phenolic resin solution was added as a binder and a carbon source to form all the raw materials. All raw materials were added to an appropriate amount of anhydrous ethanol, and ball milled on a planetary ball mill for 24 hours to obtain a mixed slurry. The mixed powder is obtained after drying, crushing, sieving and granulation. The mixed powder was dry-pressed at a pressure of 15 MPa with a holding time of 15 seconds, and then cold isostatically pressed at a pressure of 200 MPa for a holding time of 3 minutes to obtain a green sample. The green sample was kept at 900°C for 0.5 hours for negative pressure dewaxing, and then kept at 2200°C for 1 hour for normal pressure sintering to obtain a ceramic sample. After testing, the calculated spectral selectivity of this sample is 1.403.

实施例3Example 3

制备第二相为5vol%ZrB2的碳化硅基复相陶瓷。称取150g SiC粉体,15.05g ZrB2为主要原料,即SiC占两者比为95vol%,ZrB2占比为5vol%。另外加入1.76g B4C粉体为硼源,3.51g碳黑作为碳源之一,并加入17.56g酚醛树脂溶液作为粘结剂和碳源,组成所有原材料。将所有原料加入适量无水乙醇中,在行星球磨机上球磨24小时,得到混合浆料。经干燥、破碎、过筛造粒后得到混合粉体。混合粉体以15MPa压力干压成型,保压时间为15秒,然后在200MPa压力下冷等静压,保压时间为3分钟,得到坯体样品。坯体样品在900℃下保温0.5小时进行负压脱蜡,随后在2200℃下保温1小时进行常压烧结,得到陶瓷样品。经测试、计算得到该样品的光谱选择性为1.398。The silicon carbide-based composite ceramics with the second phase of 5vol% ZrB2 were prepared. Weigh 150g of SiC powder and 15.05g of ZrB 2 as the main raw material, that is, the ratio of SiC to the two is 95vol%, and the proportion of ZrB 2 is 5vol%. In addition, 1.76g of B 4 C powder was added as a boron source, 3.51g of carbon black was used as one of the carbon sources, and 17.56g of phenolic resin solution was added as a binder and a carbon source to form all the raw materials. All raw materials were added to an appropriate amount of anhydrous ethanol, and ball milled on a planetary ball mill for 24 hours to obtain a mixed slurry. The mixed powder is obtained after drying, crushing, sieving and granulation. The mixed powder was dry-pressed at a pressure of 15 MPa with a holding time of 15 seconds, and then cold isostatically pressed at a pressure of 200 MPa for a holding time of 3 minutes to obtain a green sample. The green sample was kept at 900°C for 0.5 hours for negative pressure dewaxing, and then kept at 2200°C for 1 hour for normal pressure sintering to obtain a ceramic sample. After testing, the calculated spectral selectivity of this sample was 1.398.

实施例4Example 4

制备第二相为15vol%TiB2的碳化硅基复相陶瓷。称取135g SiC粉体,33.5g TiB2为主要原料,即SiC占两者比为85vol%,TiB2占比为15vol%。另外加入1.79g B4C粉体为硼源,3.59g碳黑作为碳源之一,并加入17.93g酚醛树脂溶液作为粘结剂和碳源,组成所有原材料。将所有原料加入适量无水乙醇中,在行星球磨机上球磨24小时,得到混合浆料。经干燥、破碎、过筛造粒后得到混合粉体。混合粉体以15MPa压力干压成型,保压时间为15秒,然后在200MPa压力下冷等静压,保压时间为3分钟,得到坯体样品。坯体样品在900℃下保温0.5小时进行负压脱蜡,随后在2200℃下保温1小时进行常压烧结,得到陶瓷样品。经测试、计算得到该样品的光谱选择性为1.43。A silicon carbide-based multiphase ceramic with a second phase of 15 vol% TiB 2 was prepared. 135g of SiC powder was weighed, and 33.5g of TiB 2 was used as the main raw material, that is, SiC accounted for 85 vol% and TiB 2 accounted for 15 vol%. In addition, 1.79 g of B 4 C powder was added as a boron source, 3.59 g of carbon black was used as one of the carbon sources, and 17.93 g of phenolic resin solution was added as a binder and a carbon source to form all the raw materials. All raw materials were added to an appropriate amount of anhydrous ethanol, and ball milled on a planetary ball mill for 24 hours to obtain a mixed slurry. The mixed powder is obtained after drying, crushing, sieving and granulation. The mixed powder was dry-pressed at a pressure of 15 MPa with a holding time of 15 seconds, and then cold isostatically pressed at a pressure of 200 MPa for a holding time of 3 minutes to obtain a green sample. The green sample was kept at 900°C for 0.5 hours for negative pressure dewaxing, and then kept at 2200°C for 1 hour for normal pressure sintering to obtain a ceramic sample. After testing, the calculated spectral selectivity of this sample was 1.43.

实施例5Example 5

制备第二相为15vol%ZrB2的碳化硅基复相陶瓷。称取135g SiC粉体,45.41g ZrB2为主要原料,即SiC占两者比为85vol%,ZrB2占比为15vol%。另外加入1.92g B4C粉体为硼源,3.84g碳黑作为碳源之一,并加入19.19g酚醛树脂溶液作为粘结剂和碳源,组成所有原材料。将所有原料加入适量无水乙醇中,在行星球磨机上球磨24小时,得到混合浆料。经干燥、破碎、过筛造粒后得到混合粉体。混合粉体以15MPa压力干压成型,保压时间为15秒,然后在200MPa压力下冷等静压,保压时间为3分钟,得到坯体样品。坯体样品在900℃下保温0.5小时进行负压脱蜡,随后在2200℃下保温1小时进行常压烧结,得到陶瓷样品。经测试、计算得到该样品的光谱选择性为1.43。A silicon carbide-based multiphase ceramic with a second phase of 15 vol% ZrB2 was prepared. Weigh 135g of SiC powder and 45.41g of ZrB 2 as the main raw material, that is, the ratio of SiC to the two is 85vol%, and that of ZrB 2 is 15vol%. In addition, 1.92g of B 4 C powder was added as a boron source, 3.84g of carbon black was used as one of the carbon sources, and 19.19g of phenolic resin solution was added as a binder and a carbon source to form all the raw materials. All raw materials were added to an appropriate amount of anhydrous ethanol, and ball milled on a planetary ball mill for 24 hours to obtain a mixed slurry. The mixed powder is obtained after drying, crushing, sieving and granulation. The mixed powder was dry-pressed at a pressure of 15 MPa with a holding time of 15 seconds, and then cold isostatically pressed at a pressure of 200 MPa for a holding time of 3 minutes to obtain a green sample. The green sample was kept at 900°C for 0.5 hours for negative pressure dewaxing, and then kept at 2200°C for 1 hour for normal pressure sintering to obtain a ceramic sample. After testing, the calculated spectral selectivity of this sample was 1.43.

实施例6Example 6

制备第二相为25vol%TiB2的碳化硅基复相陶瓷。称取120g SiC粉体,56.25g TiB2为主要原料,即SiC占两者比为75vol%,TiB2占比为25vol%。另外加入1.88g B4C粉体为硼源,3.75g碳黑作为碳源之一,并加入18.75g酚醛树脂溶液作为粘结剂和碳源,组成所有原材料。将所有原料加入适量无水乙醇中,在行星球磨机上球磨24小时,得到混合浆料。经干燥、破碎、过筛造粒后得到混合粉体。混合粉体以15MPa压力干压成型,保压时间为15秒,然后在200MPa压力下冷等静压,保压时间为3分钟,得到坯体样品。坯体样品在900℃下保温0.5小时进行负压脱蜡,随后在2200℃下保温1小时进行常压烧结,得到陶瓷样品。经测试、计算得到该样品的光谱选择性为1.499。A silicon carbide-based multiphase ceramic with a second phase of 25 vol% TiB 2 was prepared. Weigh 120g of SiC powder and 56.25g of TiB 2 as the main raw material, that is, the ratio of SiC to the two is 75vol%, and the proportion of TiB 2 is 25vol%. In addition, 1.88g of B 4 C powder was added as a boron source, 3.75g of carbon black was used as one of the carbon sources, and 18.75g of phenolic resin solution was added as a binder and a carbon source to form all the raw materials. All raw materials were added to an appropriate amount of anhydrous ethanol, and ball milled on a planetary ball mill for 24 hours to obtain a mixed slurry. The mixed powder is obtained after drying, crushing, sieving and granulation. The mixed powder was dry-pressed at a pressure of 15 MPa with a holding time of 15 seconds, and then cold isostatically pressed at a pressure of 200 MPa for a holding time of 3 minutes to obtain a green sample. The green sample was kept at 900°C for 0.5 hours for negative pressure dewaxing, and then kept at 2200°C for 1 hour for normal pressure sintering to obtain a ceramic sample. After testing, the calculated spectral selectivity of this sample was 1.499.

实施例7Example 7

制备第二相为25vol%ZrB2的碳化硅基复相陶瓷。称取120g SiC粉体,76.25g ZrB2为主要原料,即SiC占两者比为75vol%,ZrB2占比为25vol%。另外加入2.09g B4C粉体为硼源,4.18g碳黑作为碳源之一,并加入20.88g酚醛树脂溶液作为粘结剂和碳源,组成所有原材料。将所有原料加入适量无水乙醇中,在行星球磨机上球磨24小时,得到混合浆料。经干燥、破碎、过筛造粒后得到混合粉体。混合粉体以15MPa压力干压成型,保压时间为15秒,然后在200MPa压力下冷等静压,保压时间为3分钟,得到坯体样品。坯体样品在900℃下保温0.5小时进行负压脱蜡,随后在2200℃下保温1小时进行常压烧结,得到陶瓷样品。经测试、计算得到该样品的光谱选择性为1.464。A silicon carbide-based multiphase ceramic with a second phase of 25 vol% ZrB 2 was prepared. Weigh 120g of SiC powder and 76.25g of ZrB 2 as the main raw material, that is, the ratio of SiC to the two is 75vol%, and the proportion of ZrB 2 is 25vol%. In addition, 2.09 g of B 4 C powder was added as a boron source, 4.18 g of carbon black was used as one of the carbon sources, and 20.88 g of phenolic resin solution was added as a binder and a carbon source to form all the raw materials. All raw materials were added to an appropriate amount of anhydrous ethanol, and ball milled on a planetary ball mill for 24 hours to obtain a mixed slurry. The mixed powder is obtained after drying, crushing, sieving and granulation. The mixed powder was dry-pressed at a pressure of 15 MPa with a holding time of 15 seconds, and then cold isostatically pressed at a pressure of 200 MPa for a holding time of 3 minutes to obtain a green sample. The green sample was kept at 900°C for 0.5 hours for negative pressure dewaxing, and then kept at 2200°C for 1 hour for normal pressure sintering to obtain a ceramic sample. After testing, the calculated spectral selectivity of this sample is 1.464.

实施例8Example 8

制备第二相为35vol%TiB2的碳化硅基复相陶瓷。称取100g SiC粉体,75.72g TiB2为主要原料,即SiC占两者比为65vol%,TiB2占比为35vol%。另外加入1.87g B4C粉体为硼源,3.74g碳黑作为碳源之一,并加入18.69g酚醛树脂溶液作为粘结剂和碳源,组成所有原材料。将所有原料加入适量无水乙醇中,在行星球磨机上球磨24小时,得到混合浆料。经干燥、破碎、过筛造粒后得到混合粉体。混合粉体以15MPa压力干压成型,保压时间为15秒,然后在200MPa压力下冷等静压,保压时间为3分钟,得到坯体样品。坯体样品在900℃下保温0.5小时进行负压脱蜡,随后在2200℃下保温1小时进行常压烧结,得到陶瓷样品。经测试、计算得到该样品的光谱选择性为1.525。A silicon carbide-based multiphase ceramic with a second phase of 35 vol% TiB 2 was prepared. Weigh 100g of SiC powder and 75.72g of TiB 2 as the main raw material, that is, the ratio of SiC to the two is 65vol%, and the proportion of TiB 2 is 35vol%. In addition, 1.87g of B 4 C powder was added as a boron source, 3.74g of carbon black was used as one of the carbon sources, and 18.69g of phenolic resin solution was added as a binder and a carbon source to form all the raw materials. All raw materials were added to an appropriate amount of anhydrous ethanol, and ball milled on a planetary ball mill for 24 hours to obtain a mixed slurry. The mixed powder is obtained after drying, crushing, sieving and granulation. The mixed powder was dry-pressed at a pressure of 15 MPa with a holding time of 15 seconds, and then cold isostatically pressed at a pressure of 200 MPa for a holding time of 3 minutes to obtain a green sample. The green sample was kept at 900°C for 0.5 hours for negative pressure dewaxing, and then kept at 2200°C for 1 hour for normal pressure sintering to obtain a ceramic sample. After testing, the calculated spectral selectivity of this sample is 1.525.

实施例9Example 9

制备第二相为35vol%ZrB2的碳化硅基复相陶瓷。称取100g SiC粉体,102.64gZrB2为主要原料,即SiC占两者比为65vol%,ZrB2占比为35vol%。另外加入2.16g B4C粉体为硼源,4.31g碳黑作为碳源之一,并加入21.56g酚醛树脂溶液作为粘结剂和碳源,组成所有原材料。将所有原料加入适量无水乙醇中,在行星球磨机上球磨24小时,得到混合浆料。经干燥、破碎、过筛造粒后得到混合粉体。混合粉体以15MPa压力干压成型,保压时间为15秒,然后在200MPa压力下冷等静压,保压时间为3分钟,得到坯体样品。坯体样品在900℃下保温0.5小时进行负压脱蜡,随后在2200℃下保温1小时进行常压烧结,得到陶瓷样品。经测试、计算得到该样品的光谱选择性为1.476。A silicon carbide-based composite ceramic with a second phase of 35 vol% ZrB 2 was prepared. Weigh 100g of SiC powder, and 102.64g of ZrB 2 is the main raw material, that is, the ratio of SiC to the two is 65vol%, and the proportion of ZrB 2 is 35vol%. In addition, 2.16g of B 4 C powder was added as a boron source, 4.31g of carbon black was used as one of the carbon sources, and 21.56g of phenolic resin solution was added as a binder and a carbon source to form all the raw materials. All raw materials were added to an appropriate amount of anhydrous ethanol, and ball milled on a planetary ball mill for 24 hours to obtain a mixed slurry. The mixed powder is obtained after drying, crushing, sieving and granulation. The mixed powder was dry-pressed at a pressure of 15 MPa with a holding time of 15 seconds, and then cold isostatically pressed at a pressure of 200 MPa for a holding time of 3 minutes to obtain a green sample. The green sample was kept at 900°C for 0.5 hours for negative pressure dewaxing, and then kept at 2200°C for 1 hour for normal pressure sintering to obtain a ceramic sample. After testing, the calculated spectral selectivity of this sample is 1.476.

实施例10Example 10

制备第二相为50vol%TiB2的碳化硅基复相陶瓷。称取85g SiC粉体,119.53g TiB2为主要原料,即SiC占两者比为50vol%,TiB2占比为50vol%。另外加入2.18g B4C粉体为硼源,4.35g碳黑作为碳源之一,并加入21.76g酚醛树脂溶液作为粘结剂和碳源,组成所有原材料。将所有原料加入适量无水乙醇中,在行星球磨机上球磨24小时,得到混合浆料。经干燥、破碎、过筛造粒后得到混合粉体。混合粉体以15MPa压力干压成型,保压时间为15秒,然后在200MPa压力下冷等静压,保压时间为3分钟,得到坯体样品。坯体样品在900℃下保温0.5小时进行负压脱蜡,随后在2200℃下保温1小时进行常压烧结,得到陶瓷样品。经测试、计算得到该样品的光谱选择性为1.632。A silicon carbide-based composite ceramic with 50 vol% TiB2 as the second phase was prepared. 85g of SiC powder was weighed, and 119.53g of TiB 2 was used as the main raw material, that is, the ratio of SiC to the two was 50vol%, and the proportion of TiB 2 was 50vol%. In addition, 2.18g of B 4 C powder was added as a boron source, 4.35g of carbon black was used as one of the carbon sources, and 21.76g of phenolic resin solution was added as a binder and a carbon source to form all the raw materials. All raw materials were added to an appropriate amount of anhydrous ethanol, and ball milled on a planetary ball mill for 24 hours to obtain a mixed slurry. The mixed powder is obtained after drying, crushing, sieving and granulation. The mixed powder was dry-pressed at a pressure of 15 MPa with a holding time of 15 seconds, and then cold isostatically pressed at a pressure of 200 MPa for a holding time of 3 minutes to obtain a green sample. The green sample was kept at 900°C for 0.5 hours for negative pressure dewaxing, and then kept at 2200°C for 1 hour for normal pressure sintering to obtain a ceramic sample. After testing, the calculated spectral selectivity of this sample was 1.632.

实施例11Example 11

制备第二相为50vol%ZrB2的碳化硅基复相陶瓷。称取85g SiC粉体,162.03g ZrB2为主要原料,即SiC占两者比为50vol%,ZrB2占比为50vol%。另外加入2.63g B4C粉体为硼源,5.26g碳黑作为碳源之一,并加入26.28g酚醛树脂溶液作为粘结剂和碳源,组成所有原材料。将所有原料加入适量无水乙醇中,在行星球磨机上球磨24小时,得到混合浆料。经干燥、破碎、过筛造粒后得到混合粉体。混合粉体以15MPa压力干压成型,保压时间为15秒,然后在200MPa压力下冷等静压,保压时间为3分钟,得到坯体样品。坯体样品在900℃下保温0.5小时进行负压脱蜡,随后在2200℃下保温1小时进行常压烧结,得到陶瓷样品。经测试、计算得到该样品的光谱选择性为1.549。A silicon carbide-based composite ceramic with a second phase of 50 vol% ZrB2 was prepared. Weigh 85g of SiC powder and 162.03g of ZrB 2 as the main raw material, that is, SiC accounts for 50vol% of the two, and ZrB 2 accounts for 50vol%. In addition, 2.63g of B 4 C powder was added as a boron source, 5.26g of carbon black was used as one of the carbon sources, and 26.28g of phenolic resin solution was added as a binder and a carbon source to form all the raw materials. All raw materials were added to an appropriate amount of anhydrous ethanol, and ball milled on a planetary ball mill for 24 hours to obtain a mixed slurry. The mixed powder is obtained after drying, crushing, sieving and granulation. The mixed powder was dry-pressed at a pressure of 15 MPa with a holding time of 15 seconds, and then cold isostatically pressed at a pressure of 200 MPa for a holding time of 3 minutes to obtain a green sample. The green sample was kept at 900°C for 0.5 hours for negative pressure dewaxing, and then kept at 2200°C for 1 hour for normal pressure sintering to obtain a ceramic sample. After testing, the calculated spectral selectivity of this sample is 1.549.

Claims (10)

1.TiB2或ZrB2在提高碳化硅基复相陶瓷材料光谱选择性中的应用,其特征在于,所述碳化硅基复相陶瓷材料的主相为SiC,第二相为TiB2或ZrB2;在所述主相和第二相中,主相含量为50vol%-85vol%;第二相含量为15vol%-50vol%; 1. The application of TiB or ZrB in improving the spectral selectivity of silicon carbide-based composite ceramic materials, wherein the main phase of the silicon carbide-based composite ceramic material is SiC, and the second phase is TiB or ZrB 2 ; in the main phase and the second phase, the main phase content is 50vol%-85vol%; the second phase content is 15vol%-50vol%; 所制成的SiC-TiB2复相陶瓷材料的光谱选择性α/ε为:1.43-1.632;所制成的SiC-ZrB2复相陶瓷材料的光谱选择性α/ε为:1.43-1.549。The spectral selectivity α/ε of the prepared SiC-TiB 2 multiphase ceramic material is: 1.43-1.632; the spectral selectivity α/ε of the prepared SiC-ZrB 2 multiphase ceramic material is: 1.43-1.549. 2.根据权利要求1所述的TiB2或ZrB2在提高碳化硅基复相陶瓷材料光谱选择性中的应用,其特征在于,所述碳化硅基复相陶瓷材料还包括B-C体系烧结助剂;所述主相和第二相的含量为90-96wt%;所述B-C体系烧结助剂占总原材料质量比为4-10wt%,各组分含量之和为100%。2 . The application of TiB 2 or ZrB 2 according to claim 1 in improving the spectral selectivity of silicon carbide-based composite ceramic materials, wherein the silicon carbide-based composite ceramic materials further comprise BC system sintering aids ; The content of the main phase and the second phase is 90-96 wt %; the mass ratio of the BC system sintering aid to the total raw material is 4-10 wt %, and the sum of the contents of each component is 100%. 3.根据权利要求1所述的TiB2或ZrB2在提高碳化硅基复相陶瓷材料光谱选择性中的应用,其特征在于,所述碳化硅基复相陶瓷材料的制备方法包括:将原料SiC粉体、TiB2或ZrB2粉体、B-C体系烧结助剂加入无水乙醇中,再加入粘结剂,球磨得到浆料;将所得浆料烘干、破碎、造粒后得到混合粉体;将混合粉体经干压成型,再经过冷等静压、负压脱蜡和常压烧结得到复合陶瓷块体。3. The application of TiB 2 or ZrB 2 in improving the spectral selectivity of silicon carbide-based composite ceramic materials according to claim 1, wherein the preparation method of the silicon carbide-based composite ceramic materials comprises: mixing raw materials SiC powder, TiB 2 or ZrB 2 powder, and BC system sintering aid are added to anhydrous ethanol, then a binder is added, and the slurry is obtained by ball milling; the obtained slurry is dried, crushed and granulated to obtain a mixed powder ; The mixed powder is formed by dry pressing, and then a composite ceramic block is obtained by cold isostatic pressing, negative pressure dewaxing and normal pressure sintering. 4.根据权利要求3所述的TiB2或ZrB2在提高碳化硅基复相陶瓷材料光谱选择性中的应用,其特征在于,所述SiC粉体的粒径为0.5-1μm;所述TiB2粉体的粒径为1-3μm;所述ZrB2粉体的粒径为1-3μm。4. The application of TiB 2 or ZrB 2 in improving the spectral selectivity of silicon carbide-based composite ceramic materials according to claim 3, wherein the particle size of the SiC powder is 0.5-1 μm; the TiB 2 The particle size of the powder is 1-3 μm; the particle size of the ZrB 2 powder is 1-3 μm. 5.根据权利要求3所述的TiB2或ZrB2在提高碳化硅基复相陶瓷材料光谱选择性中的应用,其特征在于,所述B-C体系烧结助剂中,B源为B4C、B粉、硼酸中的至少一种;C源为酚醛树脂、果糖、无定形碳、碳黑中的至少一种。5. The application of TiB 2 or ZrB 2 according to claim 3 in improving the spectral selectivity of silicon carbide-based composite ceramic materials, wherein, in the BC system sintering aid, the B source is B 4 C, At least one of B powder and boric acid; C source is at least one of phenolic resin, fructose, amorphous carbon and carbon black. 6.根据权利要求3所述的TiB2或ZrB2在提高碳化硅基复相陶瓷材料光谱选择性中的应用,其特征在于,所述粘结剂为酚醛树脂、PVA、PVB中的至少一种。6. The application of TiB or ZrB according to claim 3 in improving the spectral selectivity of silicon carbide-based composite ceramic materials, wherein the binder is at least one of phenolic resin, PVA, and PVB. kind. 7.根据权利要求3所述的TiB2或ZrB2在提高碳化硅基复相陶瓷材料光谱选择性中的应用,其特征在于,所述干压成型压力为10-20MPa,保压时间为5-15秒;所述冷等静压压力为150-250MPa,保压时间为1-3分钟。7. The application of TiB 2 or ZrB 2 according to claim 3 in improving the spectral selectivity of silicon carbide-based multiphase ceramic materials, wherein the dry pressing pressure is 10-20MPa, and the dwell time is 5 -15 seconds; the cold isostatic pressing pressure is 150-250 MPa, and the holding time is 1-3 minutes. 8.根据权利要求3所述的TiB2或ZrB2在提高碳化硅基复相陶瓷材料光谱选择性中的应用,其特征在于,所述负压脱蜡温度为900-1100℃,保温时间为0.5-2小时;所述常压烧结温度为2000-2200℃;在最高温度点保温时间为0.5-2小时;所述常压烧结气氛为氩气气氛。8 . The application of TiB 2 or ZrB 2 according to claim 3 in improving the spectral selectivity of silicon carbide-based multiphase ceramic materials, wherein the negative pressure dewaxing temperature is 900-1100° C., and the holding time is 0.5-2 hours; the normal-pressure sintering temperature is 2000-2200° C.; the holding time at the highest temperature point is 0.5-2 hours; the normal-pressure sintering atmosphere is an argon atmosphere. 9.根据权利要求8所述的TiB2或ZrB2在提高碳化硅基复相陶瓷材料光谱选择性中的应用,其特征在于,所述常压烧结温度为2100-2200℃。9 . The application of TiB 2 or ZrB 2 in improving the spectral selectivity of silicon carbide-based multiphase ceramic materials according to claim 8 , wherein the normal pressure sintering temperature is 2100-2200° C. 10 . 10.根据权利要求1所述的TiB2或ZrB2在提高碳化硅基复相陶瓷材料光谱选择性中的应用,其特征在于,所述碳化硅基复相陶瓷材料应用于太阳能热吸收器材料。10. The application of TiB 2 or ZrB 2 in improving the spectral selectivity of silicon carbide-based composite ceramic materials according to claim 1, wherein the silicon carbide-based composite ceramic materials are used in solar heat absorber materials .
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