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CN113203496A - Crystal temperature measuring device and method based on quantum weak measurement amplification - Google Patents

Crystal temperature measuring device and method based on quantum weak measurement amplification Download PDF

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CN113203496A
CN113203496A CN202110677575.7A CN202110677575A CN113203496A CN 113203496 A CN113203496 A CN 113203496A CN 202110677575 A CN202110677575 A CN 202110677575A CN 113203496 A CN113203496 A CN 113203496A
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wave plate
polarization
phase
crystal
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CN113203496B (en
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朱洁
胡孟军
张永生
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University of Science and Technology of China USTC
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    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
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Abstract

本发明公开了一种基于量子弱测量放大的晶体温度测量的装置及方法，将双折射晶体温度变化转变为相位变化，再通过极小相位放大从而实现对温度的测量。此方法结合光学干涉与量子弱测量，以简单的结构实现了高精度高分辨度的温度测量；与传统的测温方法相比，省去了复杂的电学架构。本发明在军事国防、工程工业等各种需高精度温度测量的领域均可广泛使用。

Figure 202110677575

The invention discloses a crystal temperature measurement device and method based on quantum weak measurement amplification, which converts temperature change of birefringent crystal into phase change, and then realizes temperature measurement through extremely small phase amplification. This method combines optical interference and quantum weak measurement to achieve high-precision and high-resolution temperature measurement with a simple structure; compared with traditional temperature measurement methods, complex electrical structures are omitted. The invention can be widely used in various fields requiring high-precision temperature measurement, such as military national defense, engineering industry, etc.

Figure 202110677575

Description

Crystal temperature measuring device and method based on quantum weak measurement amplification
Technical Field
The invention relates to the field of measurement, in particular to a device and a method for measuring crystal temperature based on quantum weak measurement amplification.
Background
With the development of science and technology, the demand of precision measurement is getting bigger and bigger, and the precision measurement plays a considerable role from scientific research to industrial production, and from military defense to daily life. The high-precision measurement of the physical quantity temperature which plays an index role in each field is urgent.
To achieve precise measurement of temperature, temperature is generally measured using the resistance of a semiconductor device as a function of temperature, or using some physical natural frequency as a function of temperature. These methods involve more or less complex electrical devices, which limits their applicability and cost of use.
In 1988, YakirAharonov, David z. albert and LevVaidman et al published papers (phys. rev. lett.60, 1351(1988)), introduced the concept of quantum weak measurement: the quantum weak measurement is a new measurement mode based on an indirect measurement theory, is different from projection measurement, and when weak measurement is carried out, the coupling strength between a probe and a system is small, and the disturbance of the measurement to the system is small, so that information obtained by an observer is relatively small.
The method has the advantages that the pure phase amplification is realized, the physical significance is not excessive, the actual physical quantity temperature is converted into the phase, and the precise measurement of the temperature is indirectly realized. For the existing temperature measurement method, either the contact measurement is needed to limit the application range, or the measurement precision is not high enough, and the requirement of precision measurement cannot be met. The method provided by the invention can be widely applied to various places needing temperature measurement and monitoring, and provides a new idea for measuring other physical quantities.
Disclosure of Invention
The technical problem of the invention is solved: the defects of the prior art are overcome, and the crystal temperature measuring device and method based on quantum weak measurement amplification are provided. Temperature change is converted into phase change, and the phase change is amplified in a phase amplification mode, so that temperature measurement is realized, and the precision and the sensitivity are higher than those of the conventional method. In addition, the invention is realized based on the basic Mach Zehnder interferometer, has simple structure and low cost, and can be widely applied to various fields.
The purpose of the invention is realized by the following technical scheme: a crystal temperature measurement device based on quantum weak measurement amplification, comprising: a signal generating section, a temperature signal converting section, a signal amplifying section, an extracting section and a calculating section;
a signal generating section including a laser light source device, a half-wave plate, a beam polarization shifter, and a half-wave plate; the laser source device provides stable transverse polarized laser; the half-wave plate is rotated to 22.5 degrees, so that the polarization of the laser is changed from transverse direction to 45 degrees, namely, the initial polarization state of the two-energy-level quantum state system is generated
Figure BDA00031214455600000213
|H>And | V>Respectively representing horizontal and vertical polarization states; the beam polarization shifter separates the transversely polarized photons from the vertically polarized photons along two parallel paths to realize the entanglement of the polarization state of the photons and the path state, i.e. the quantum state is changed into the quantum state after passing through the beam polarization shifter
Figure BDA0003121445560000021
Figure BDA0003121445560000022
Wherein |0>And |1>Representing the path states of the light beam along the two paths; the beam continues to pass through a half-wave plate at 22.5 deg. to obtain a new quantum state
Figure BDA0003121445560000023
Figure BDA0003121445560000024
The initial state of the two-level quantum state system comprises a pointer state and a system state, namely a photon polarization state and a photon path state, and the initial state of the photon prepared by the signal generation part is
Figure BDA0003121445560000025
Figure BDA0003121445560000026
A temperature signal conversion part including a crystal to be measured at a temperature T and a temperature T0The two optical axes of the standard crystal are vertical to each other; after the signal generation part prepares the initial state of the photon, the temperature signal change of the crystal is converted into the phase change, and the quantum state of the photon is changed into
Figure BDA0003121445560000027
Figure BDA0003121445560000028
Theta (T) and theta (T)0) Respectively a crystal to be tested andthe phase introduced by the standard crystal is an object amplified and measured by a subsequent part;
a signal amplifying section including a half-wave plate disposed at 22.5 ° + δ/2 and a beam shifter; the light beam passing through the temperature signal conversion part passes through a half-wave plate arranged at 22.5 DEG, and the non-normalized photon quantum state is changed into
Figure BDA0003121445560000029
Figure BDA00031214455600000210
Then, the beam shifter is used to post-select the system state, namely the path state, and the unnormalized pointer state obtained after simplification is
Figure BDA00031214455600000211
Theta is less than 1, and the pointer state is obtained by further simplifying the approximation
Figure BDA00031214455600000212
The method comprises the steps of (1) realizing the amplification of a minimum phase theta by selecting delta meeting the condition that delta is larger than theta and i is an imaginary number unit, wherein the minimum phase refers to a phase far smaller than 1 radian; θ (T) - θ (T)0) The phase difference introduced by the crystal to be detected and the standard crystal needs to meet the requirement that theta is less than 1, and 1/delta is an amplification factor introduced by the signal amplification part;
the extraction part comprises a half-wave plate, a quarter-wave plate and a polarization beam splitter, wherein the half-wave plate and the quarter-wave plate are used for determining the polarization direction, and the polarization beam splitter is used for selecting a single polarization direction; the quantum state of the signal amplification part contains a tiny phase of theta < 1 after amplification, and the pointer state of the quantum state is in a measurement basis { | L>，|R>Measurement at, left-handed measurement base
Figure BDA0003121445560000033
Figure BDA0003121445560000032
And a dextrorotatory measuring base
Figure BDA0003121445560000031
Measuring the base | L at the left hand>During the lower measurement, the half-wave plate is arranged at 22.5 degrees, and the quarter-wave plate is arranged at 0 degree; at the measurement base | R>During the lower measurement, the half-wave plate is arranged at-22.5 degrees, and the quarter-wave plate is arranged at 0 degree;
and the calculation part calculates the original phase from the amplified minimum phase obtained by the extraction part, so as to reversely deduce the crystal temperature.
The temperature measurement mode skillfully utilizes the weak measurement amplification principle, extracts phase change caused by temperature by using the simplest optical interference mode, establishes one-to-one corresponding functional relation between the phase and the temperature, and has the double advantages of simple operation and high sensitivity and resolution.
The system of two-level quantum states is a photon.
The device is suitable for any crystal with birefringence effect and the refractive index is regularly changed along with the temperature.
The device is suitable for a physical system simultaneously having any two degrees of freedom of polarization, path and spin.
The crystal temperature measuring device based on quantum weak measurement amplification is used for measuring any physical quantity which can cause extremely small change of phase change far less than 1 radian.
The invention relates to a crystal temperature measuring method based on quantum weak measurement amplification, which comprises the following steps:
(1) the laser source generates stable linearly polarized light and realizes an initial state by combining the light beam polarization shifter;
(2) converting the temperature change of the crystal into phase change by utilizing birefringence so as to introduce a phase related to the temperature in the initial state of the step (1);
(3) introducing a phase rear state in the step (2), and realizing the amplification of a minimum phase by using a Mach-Zehnder interferometer and post-selection;
(4) in { | H>，|V>L { |)>，|R>Measuring, extracting and amplifying under the condition of less than 1 radian minimum phase; | H>And | V>Representing horizontal and vertical polarization states, respectively, left-handed measuring basis
Figure BDA0003121445560000035
And a dextrorotatory measuring base
Figure BDA0003121445560000034
i is an imaginary unit;
(5) and (4) calculating and reversely deducing the original phase of the minimum phase extracted in the step (4) to obtain the temperature of the crystal to be measured.
Compared with the prior art, the invention has the advantages that: the temperature measurement method for amplifying weak and small phases by utilizing quantum weak measurement can be realized by utilizing the existing mature interference technical means. Compared with the traditional interferometric phase measurement method, the scheme can realize the precise measurement of the temperature, has a simple structure, is easy to realize, and has the potential of being widely applied to the fields of scientific research, industrial production, national defense, military and the like which need high-precision measurement.
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In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flowchart of a temperature measurement method for amplifying weak and small phases by using quantum weak measurement according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a temperature measuring device for amplifying weak and small phases by quantum weak measurement according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an apparatus for preparing an initial state of photons according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an apparatus for converting a temperature signal into a very small phase according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an apparatus for amplifying a very small phase according to an embodiment of the present invention;
fig. 6 is a schematic diagram of an apparatus for measuring and extracting a minimum signal according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, an embodiment of the present invention provides a temperature measurement method for amplifying weak and small phases by using quantum weak measurement. The specific method comprises the following steps: the laser source generates stable linearly polarized light, and initial state preparation of photons is realized through a polarizing plate; then sequentially passing through the crystal to be detected and the standard crystal, and converting the temperature difference between the crystal to be detected and the standard crystal into a phase; the polarization state is adjusted by utilizing a half-wave plate, and weak coupling of polarization (pointer) and a path (system) is realized through a beam shifter and two half-wave plates; then, combining the beams by using a beam shifter, and selecting a path after the path is selected and only one path of light is reserved; and then, carrying out post-selection on the polarization state by a polarization analyzer to realize weak and small phase measurement, and then reversely deducing the temperature of the crystal to be measured.
The present invention will be described in detail with reference to specific examples. As shown in fig. 1, the present invention comprises the steps of:
step 1-1, generating stable linearly polarized light by a laser source, and combining a light beam polarization shifter to realize initial state preparation;
step 1-2, converting the temperature change of the crystal into phase change by utilizing birefringence so as to introduce a phase theta related to the temperature in the initial state of the previous preparation;
step 1-3, introducing a phase post-state to the previous step, and utilizing a Mach-Zehnder interferometer and post-selection to realize amplification of a minimum phase;
step 1-4, measuring under a measuring base { | H >, | V > } or { | D >, | A > } or { | L >, | R > }, and extracting and amplifying the phase which is far less than 1 radian minimum phase;
and (1) step (5) calculating and reversely deducing the original phase of the minimum phase extracted in the step (4) to obtain the temperature of the crystal to be measured.
As shown in FIG. 2, the optical path of the present invention is a temperature measuring device for amplifying a minimum phase by quantum weak measurement, and comprises a signal generating section, a temperature signal converting section, a signal amplifying section, an extracting section, and a calculating section. The signal generation part consists of a laser source 101, a half-wave plate 102, a beam polarization shifter 103 and a half-wave plate 102, wherein the half-wave plate 102, the beam polarization shifter 103 and the half-wave plate 102 are arranged in parallel; the temperature signal conversion part consists of a crystal 104 to be measured and a standard crystal 105 which are arranged in parallel; the signal amplification part is composed of a half-wave plate 102 and a beam polarization shifter 103 which are arranged in parallel; the extraction part is composed of a quarter-wave plate 106, a half-wave plate 102, a polarization beam splitter 107, a detector 108 and a detector 108, wherein the quarter-wave plate 106, the half-wave plate 102 and the polarization beam splitter 107 are arranged in parallel, and the detector 108 are arranged in the beam advancing direction for collection.
As shown in FIG. 3, the laser source produces a stable transversely polarized light, which is then converted to a 45 degree transverse polarization by a half-wave plate placed at 22.5 degrees to change the photon state to a
Figure BDA00031214455600000515
|H>And | V>Respectively representing horizontal and vertical polarization states; the light beam continuously passes through the light beam polarization shifter, so that the photons with transverse polarization and the photons with vertical polarization are transmitted along two parallel paths, the entanglement of the polarization state of the photons and the path state is realized, and the quantum state passing through the light beam polarization shifter is
Figure BDA0003121445560000051
Wherein |0>And |1>Representing the path states of the light beam along the two paths; the beam continues through a half-wave plate at 22.5 deg. to obtain a new quantum state
Figure BDA0003121445560000052
Figure BDA0003121445560000053
As shown in FIG. 4, the wafer to be testedThe temperature of the body is T and the temperature of the standard crystal is T0It is required that the optical axes of the two are perpendicular. The quantum state after passing through the crystal to be measured is
Figure BDA0003121445560000054
Figure BDA0003121445560000055
The quantum state after passing through the standard crystal is
Figure BDA0003121445560000056
Figure BDA0003121445560000057
Wherein theta (T) and theta (T)0) The phase introduced for the crystal to be measured and the phase introduced for the standard crystal respectively, the difference between the two being theta (T) -theta (T)0) I.e. very small phase requiring amplification
As shown in FIG. 5, the beam carrying the phase information is first passed through a half-wave plate placed at (22.5+ δ) ° to obtain the unnormalized quantum state
Figure BDA0003121445560000058
Figure BDA0003121445560000059
Figure BDA00031214455600000510
After continuing to pass through the beam polarization shifter, only path |0 is taken>The resulting quantum state becomes
Figure BDA00031214455600000511
Figure BDA00031214455600000512
Only the polarization state of the photon is left at the moment, and the polarization state is obtained through approximate simplification
Figure BDA00031214455600000513
According to the condition that theta is less than 1 and Taylor expansion formula, the approximation can be further simplified
Figure BDA00031214455600000514
By selecting proper delta, the amplification of the extremely small phase theta can be realized, and the amplified phase theta 'is theta'.
As shown in FIG. 6, the measurement basis L is realized by using a quarter wave plate, a half wave plate and a polarization beam splitter>，|R>Measurements under. Wherein, in the measurement base | L>During the lower measurement, the half-wave plate is arranged at 22.5 degrees, and the quarter-wave plate is arranged at 0 degree; at the measurement base | R>For the next measurement, the half-wave plate was set at-22.5 ° and the quarter-wave plate at 0 °. The difference between the two measured light intensities is Delta I-sin (theta ') to obtain amplified phase theta' according to the formula
Figure BDA0003121445560000061
Pushing out θ.
In a word, the temperature measurement method for amplifying the weak and small phases by using the quantum weak measurement changes the temperature measurement problem into the phase amplification problem through the mutual conversion of the temperature information and the phase information, and realizes the minimum phase amplification by using the weak measurement. The accuracy and the sensitivity of measurement are improved, the structure is simplified, and the operability is enhanced; can be widely applied to various fields needing precise temperature measurement.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (6)

1.一种基于量子弱测量放大的晶体温度测量装置，其特征在于，包括：信号发生部分、温度信号转换部分、信号放大部分、提取部分和计算部分；1. a crystal temperature measuring device based on quantum weak measurement amplification, is characterized in that, comprises: signal generation part, temperature signal conversion part, signal amplification part, extraction part and calculation part; 信号发生部分，包括激光源装置、半波片、光束偏振位移器以及半波片；激光源装置提供稳定的横向偏振的激光；半波片转至22.5°使得激光的偏振由横向变为45°偏振，即产生二能级量子态系统的初始偏振态
Figure FDA00031214455500000113
|H>和|V>分别表示水平和竖直两个偏振态；光束偏振位移器让横向偏振的光子与垂直偏振的光子沿着两条平行的路径分开，实现光子偏振态与路径态的纠缠，即经过光束偏振位移器后量子态变为
Figure FDA0003121445550000011
Figure FDA0003121445550000012
其中的|0>和|1>表示沿着两个路径的光束的路径态；此光束继续通过置于22.5°的半波片，得到新的量子态为
Figure FDA0003121445550000013
Figure FDA0003121445550000014
二能级量子态系统的初始态包括指针态与系统态即光子偏振态与光子路径态，信号发生部分所制备的光子初始态为
Figure FDA0003121445550000015
Figure FDA0003121445550000016
The signal generating part includes a laser source device, a half-wave plate, a beam polarization shifter and a half-wave plate; the laser source device provides a stable transversely polarized laser; the half-wave plate is rotated to 22.5° to make the polarization of the laser change from transverse to 45° Polarization, that is, the initial polarization state that produces the two-level quantum state system
Figure FDA00031214455500000113
|H> and |V> represent the horizontal and vertical polarization states, respectively; the beam polarization shifter separates the laterally polarized photons from the vertically polarized photons along two parallel paths, realizing the entanglement of the photon polarization state and the path state , that is, after passing through the beam polarization shifter, the quantum state becomes
Figure FDA0003121445550000011
Figure FDA0003121445550000012
where |0> and |1> represent the path states of the beam along the two paths; the beam continues to pass through the half-wave plate placed at 22.5°, and a new quantum state is obtained as
Figure FDA0003121445550000013
Figure FDA0003121445550000014
The initial state of the two-level quantum state system includes the finger state and the system state, that is, the photon polarization state and the photon path state. The initial state of the photon prepared by the signal generating part is
Figure FDA0003121445550000015
Figure FDA0003121445550000016
 温度信号转换部分，包括光依次通过处于温度T的待测晶体和处于温度T0的标准晶体，二者光轴相互垂直；信号发生部分制备出光子初始态后，晶体温度信号变化转化成相位变化，光子的量子态变为
Figure FDA0003121445550000017
Figure FDA0003121445550000018
θ(T)和θ(T0)分别为待测晶体和标准晶体引入的相位，为后续部分放大和测量的对象；The temperature signal conversion part includes light passing through the crystal to be tested at temperature T and the standard crystal at temperature T 0 in turn, and the optical axes of the two are perpendicular to each other; after the initial state of photons is prepared by the signal generating part, the change of the crystal temperature signal is converted into a phase change , the quantum state of the photon becomes
Figure FDA0003121445550000017
Figure FDA0003121445550000018
θ(T) and θ(T 0 ) are the phases introduced by the crystal to be measured and the standard crystal, respectively, and are the objects of subsequent amplification and measurement; 信号放大部分，包括一个置于22.5°+δ/2的半波片和一个光束位移器；经过温度信号转换部分的光束通过一个置于22.5°的半波片，未归一化的光子量子态变成
Figure FDA0003121445550000019
Figure FDA00031214455500000110
再利用光束位移器对系统态,即路径态，进行后选择，化简后得到未归一化的指针态为
Figure FDA00031214455500000111
并进一步化简近似得到指针态为
Figure FDA00031214455500000112
通过选取满足条件δ＜θ的δ，i为虚数单位,实现极小相位θ放大，所述极小相位指远小于1弧度的相位；θ＝θ(T)-θ(T0)为待测晶体与标准晶体引入的相位差，需满足θ＜＜1，1/δ为信号放大部分引入的放大因子；The signal amplifying part includes a half-wave plate placed at 22.5°+δ/2 and a beam displacer; the light beam passing through the temperature signal conversion part passes through a half-wave plate placed at 22.5°, the unnormalized photon quantum state become
Figure FDA0003121445550000019
Figure FDA00031214455500000110
Then, the system state, that is, the path state, is post-selected by the beam displacer, and the unnormalized pointer state is obtained after simplification:
Figure FDA00031214455500000111
And further simplify the approximation to get the pointer state as
Figure FDA00031214455500000112
By selecting δ that satisfies the condition δ<θ, i is an imaginary unit, and the amplification of the minimum phase θ is realized, and the minimum phase refers to the phase far less than 1 radian; θ=θ(T)-θ(T 0 ) is to be measured The phase difference introduced by the crystal and the standard crystal must satisfy θ<<1, and 1/δ is the amplification factor introduced by the signal amplification part; 提取部分，包括半波片、四分之一波片和偏振分束器，半波片和四分之一波片用来决定偏振方向，偏振分束器用来选择单一偏振方向；经过信号放大部分的量子态包含放大后的θ＜＜1的极小相位，其指针态在测量基{|L>,|R>}下进行测量，左旋测量基
Figure FDA0003121445550000022
Figure FDA0003121445550000023
和右旋测量基
Figure FDA0003121445550000021
在左旋测量基|L>下测量时，半波片置于22.5°,四分之一波片置于0°；在测量基|R>下测量时，半波片置于-22.5°,四分之一波片置于0°；Extraction part, including half-wave plate, quarter-wave plate and polarization beam splitter, half-wave plate and quarter-wave plate are used to determine the polarization direction, polarization beam splitter is used to select a single polarization direction; after the signal amplification part The quantum state of , contains the amplified minimal phase of θ<<1, which means that the state is measured under the measurement basis {|L>, |R>}, and the left-handed measurement basis
Figure FDA0003121445550000022
Figure FDA0003121445550000023
and dextrorotatory measurement basis
Figure FDA0003121445550000021
When measuring under the left-handed measuring base |L>, the half-wave plate is placed at 22.5°, and the quarter-wave plate is placed at 0°; when measuring under the measuring base |R>, the half-wave plate is placed at -22.5°, and the four-wave plate is placed at -22.5°. The one-wave plate is placed at 0°; 计算部分，由提取部分得到放大后的极小相位计算出原相位，从而反推出晶体温度。In the calculation part, the original phase is calculated from the amplified minimal phase obtained by the extraction part, thereby inverting the crystal temperature. 2.根据权利要求1所述的装置，其特征在于：所述二能级量子态的系统为光子。2 . The device according to claim 1 , wherein the system of the two-level quantum states is photons. 3 . 3.根据权利要求1所述的装置，其特征在于：所述装置适用于任何具有双折射效应且折射率大小随温度规律变化的晶体。3 . The device according to claim 1 , wherein the device is suitable for any crystal with birefringence effect and the size of the refractive index changes regularly with temperature. 4 . 4.根据权利要求1或2所述的装置，其特征在于：所述装置对于同时具有偏振、路径、自旋任意两个自由度的物理体系均适用。4 . The device according to claim 1 or 2 , wherein the device is applicable to a physical system with any two degrees of freedom of polarization, path and spin at the same time. 5 . 5.根据权利要求1所述的装置，其特征在于：所述基于量子弱测量放大的晶体温度测量装置用于测量任意导致相位变化远小于1弧度的极小变化的物理量。5 . The device according to claim 1 , wherein the crystal temperature measurement device based on quantum weak measurement amplification is used to measure any physical quantity that causes the phase change to be much smaller than 1 radian. 6 . 6.一种如权利要求1-5任意之一所述的基于量子弱测量放大的晶体温度测量装置的测量方法，其特征在于，步骤如下：6. A measuring method based on the crystal temperature measuring device of quantum weak measurement amplification as described in any one of claims 1-5, it is characterized in that, step is as follows: (1)激光源产生稳定的线偏振光，并结合光束偏振位移器实现初始态；(1) The laser source generates stable linearly polarized light, and combines the beam polarization shifter to realize the initial state; (2)利用双折射将晶体温度变化转变为相位变化，从而在步骤(1)初始态中引入一个与温度有关的相位；(2) using birefringence to convert the crystal temperature change into a phase change, thereby introducing a temperature-related phase in the initial state of step (1); (3)在步骤(2)引入相位后态，利用马赫曾德干涉仪及后选择实现极小相位的放大；(3) Introducing the phase post-state in step (2), and utilizing the Mach-Zehnder interferometer and post-selection to realize the amplification of the minimal phase; (4)在{|H>,|V>}或{|L>,|R>}下进行测量提取放大后的远小于1弧度极小相位；|H>和|V>分别表示水平和竖直两个偏振态,左旋测量基
Figure FDA0003121445550000024
和右旋测量基
Figure FDA0003121445550000025
i为虚数单位；(4) Measure under {|H>, |V>} or {|L>, |R>} to extract the magnified minimum phase far less than 1 radian; |H> and |V> represent horizontal and vertical, respectively Straight two polarization states, left-handed measurement basis
Figure FDA0003121445550000024
and dextrorotatory measurement basis
Figure FDA0003121445550000025
i is an imaginary unit; (5)对于步骤(4)中提取到的极小相位，通过计算反推出原相位，得到待测晶体的温度。(5) For the minimal phase extracted in step (4), the original phase is inversely derived through calculation to obtain the temperature of the crystal to be measured.
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