CN113097406A - OLED display panel and preparation method thereof - Google Patents
OLED display panel and preparation method thereof Download PDFInfo
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- CN113097406A CN113097406A CN202110282792.6A CN202110282792A CN113097406A CN 113097406 A CN113097406 A CN 113097406A CN 202110282792 A CN202110282792 A CN 202110282792A CN 113097406 A CN113097406 A CN 113097406A
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- 238000004519 manufacturing process Methods 0.000 claims description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 8
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 claims description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 229910001887 tin oxide Inorganic materials 0.000 claims description 8
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 6
- 229910000611 Zinc aluminium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The application provides an OLED display panel and a preparation method thereof, the OLED display panel comprises an auxiliary electrode and an anode which are arranged on the same layer and in an insulating mode, a via hole is formed in the pixel definition layer above the auxiliary electrode, a bottom cavity and a suspended portion arranged above the bottom cavity are formed in the inner side wall of the via hole, and the cathode extends into the bottom cavity through the via hole and is in contact with the auxiliary electrode, so that the current drop of the cathode is reduced.
Description
Technical Field
The application relates to the technical field of OLED display, in particular to an OLED display panel and a preparation method thereof.
Background
The cathode of the conventional OLED display panel has large resistance due to large area and thin thickness, and has serious current drop (IR-drop), so that the OLED display panel has obvious uneven brightness.
In the prior art, an auxiliary electrode is usually provided to overlap with the metal cathode to reduce current drop, and an inverted trapezoidal isolation column is usually arranged between the cathode and the auxiliary electrode, but the volume of the isolation column is large, so that the aperture opening ratio and the packaging are affected, the selectivity of raw materials is low, the manufacturing process is complicated, and the production efficiency is reduced.
Therefore, the conventional OLED display panel has the technical problem of uneven brightness caused by large cathode current drop.
Disclosure of Invention
The embodiment of the application provides an OLED display panel and a preparation method of the OLED display panel, and the technical problem that the brightness is uneven due to large cathode current voltage drop of the existing OLED display panel can be solved.
The embodiment of the application provides a preparation method of an OLED display panel, which comprises the following steps:
providing a substrate;
preparing a driving circuit layer on the substrate;
preparing an anode and an auxiliary electrode on the driving circuit layer, wherein the auxiliary electrode and the anode are in the same layer and are arranged in an insulating manner;
preparing a sacrificial layer on the upper surface of the auxiliary electrode;
preparing a pixel defining layer on the flat layer, wherein the pixel defining layer comprises a through hole which exposes part of the sacrificial layer and part of the auxiliary electrode;
removing the sacrificial layer to form a bottom cavity between the pixel defining layer and the auxiliary electrode;
and preparing a light-emitting layer and a cathode on the pixel defining layer, wherein the cathode is in contact with the auxiliary electrode in the bottom cavity.
Optionally, in some embodiments of the present application, the step of preparing a light emitting layer on the pixel defining layer further includes: and a first evaporation angle is adopted when the luminescent layer is prepared, so that the luminescent layer does not completely cover the auxiliary electrode below the bottom cavity.
Optionally, in some embodiments of the present application, the step of preparing the cathode further comprises: and a second evaporation angle is adopted during the preparation of the cathode, the cathode is formed in the bottom cavity, and the cathode is in contact with the auxiliary electrode in the bottom cavity.
Optionally, in some embodiments of the present application, the step of removing the sacrificial layer to form the bottom cavity further includes: and providing hydrofluoric acid etching liquid, and performing wet etching on the sacrificial layer by using the hydrofluoric acid etching liquid on the whole surface to remove the sacrificial layer and form the bottom cavity.
Optionally, in some embodiments of the present application, the step of preparing the sacrificial layer further includes: forming a silicon oxide, silicon nitride or silicon oxynitride film layer, forming the silicon oxide, silicon nitride or silicon oxynitride film layer into the sacrificial layer, wherein the sacrificial layer is made of silicon oxide, silicon nitride or silicon oxynitride.
The embodiment of the application provides an OLED display panel, includes:
a substrate;
a TFT device disposed on the substrate;
a light emitting device disposed over the TFT device, the light emitting device including an anode, a pixel defining layer, a light emitting layer, a cathode;
the OLED display panel comprises an auxiliary electrode, the auxiliary electrode and the anode are arranged on the same layer and in an insulating mode, a via hole is formed in the pixel defining layer in the area above the auxiliary electrode, a bottom cavity and a suspended portion arranged above the bottom cavity are formed in the inner side wall of the via hole, and the cathode extends into the bottom cavity through the via hole and is in contact with the auxiliary electrode.
Optionally, in some embodiments of the present application, the auxiliary electrode includes any one of indium tin oxide/silver/indium tin oxide, indium zinc oxide/silver/indium zinc oxide, indium tin oxide/aluminum/indium tin oxide, or indium zinc oxide/aluminum/indium zinc oxide, and the auxiliary electrode has a thickness ranging from 500 angstroms to 2000 angstroms.
Optionally, in some embodiments of the present application, an orthographic projection of the bottom cavity on the substrate overlaps with an orthographic projection of the pixel defining layer on the substrate.
Optionally, in some embodiments of the present application, the cathode is partitioned by the bottom cavity to form a first cathode portion and a second cathode portion insulated from each other, the first cathode portion is in contact with the auxiliary electrode, and the second cathode portion is disposed above the suspended portion.
Optionally, in some embodiments of the present application, an orthogonal projection of the first cathode portion on the substrate has a partial overlapping region with an orthogonal projection of the second cathode portion on the substrate.
The OLED display panel comprises a substrate, a TFT device arranged on the substrate, and a light-emitting device arranged above the TFT device, wherein the light-emitting device comprises an anode, a pixel definition layer, a light-emitting layer and a cathode, the OLED display panel further comprises an auxiliary electrode, the auxiliary electrode and the anode are arranged in a same layer and in an insulating mode, a via hole is formed in the pixel definition layer in the area above the auxiliary electrode, a bottom cavity and a suspended portion arranged above the bottom cavity are formed in the inner side wall of the via hole, and the cathode extends into the bottom cavity through the via hole and is in contact with the auxiliary electrode; through OLED display panel sets up the end chamber, the end chamber is used for the negative pole with auxiliary electrode touches and connects, has alleviated current of the negative pole and has dropped the big technical problem that leads to luminance uneven that has existed OLED display panel.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for manufacturing an OLED display panel according to an embodiment of the present disclosure;
fig. 2A is a schematic structural diagram of steps in a method for manufacturing an OLED display panel according to an embodiment of the present disclosure;
fig. 2B is a schematic structural diagram of steps in a method for manufacturing an OLED display panel according to an embodiment of the present disclosure;
fig. 2C is a schematic structural diagram of steps in a method for manufacturing an OLED display panel according to an embodiment of the present application;
fig. 2D is a schematic diagram of a fourth structure of each step in the method for manufacturing an OLED display panel according to the embodiment of the present application;
fig. 2E is a schematic structural diagram of a fifth step in the method for manufacturing an OLED display panel according to the embodiment of the present application;
fig. 2F is a schematic structural diagram of a sixth step in the method for manufacturing an OLED display panel according to the embodiment of the present application;
fig. 2G is a schematic structural diagram of steps in a method for manufacturing an OLED display panel according to an embodiment of the present application;
FIG. 3 is a schematic cross-sectional view of an OLED display panel provided in an embodiment of the present application;
fig. 4 is a schematic cross-sectional view of an undercut structure in an OLED display panel according to an embodiment of the present application.
Description of reference numerals:
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
The embodiment of the application provides an OLED display panel and a preparation method thereof. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.
As shown in fig. 1, an embodiment of the present application provides a method for manufacturing an OLED display panel, including:
s1, providing a substrate 10;
s2, preparing a driving circuit layer TFT device and a flat layer 209 on the substrate 10;
s3, preparing an anode 302 and an auxiliary electrode 40 on the flat layer 209, wherein the auxiliary electrode 40 and the anode 302 are in the same layer and are arranged in an insulating way;
s4, preparing a sacrificial layer 50 on the upper surface of the auxiliary electrode 40;
s5, preparing a pixel defining layer 301 on the flat layer 209, wherein the pixel defining layer 301 comprises a via hole H which exposes a part of the sacrificial layer 50 and a part of the auxiliary electrode 40;
s6, removing the sacrificial layer 50 to form a bottom cavity 2082 between the pixel defining layer 301 and the auxiliary electrode 40;
s7, preparing a light emitting layer 303 on the pixel defining layer 301, and a cathode 304, the cathode 304 contacting the auxiliary electrode 40 in the bottom cavity 2082.
Wherein the driving circuit layer includes a TFT device and a planarization layer.
In step S6, as shown in fig. 2A to 2G, for a schematic diagram of a semi-finished film layer in each step of forming the OLED display panel 1, the etching solution may dissolve the sacrificial layer 50 and remove the sacrificial layer 50, which is equivalent to removing the sacrificial layer 50 by wet etching.
The etching solution can be any solution capable of dissolving the material of the sacrificial layer 50.
When the sacrificial layer 50 is silicon oxide, silicon nitride or silicon oxynitride, the etching solution may be hydrofluoric acid etching solution.
In one embodiment, the step of preparing the sacrificial layer 50 further comprises: forming a silicon oxide, silicon nitride or silicon oxynitride film layer, forming the silicon oxide, silicon nitride or silicon oxynitride film layer into the sacrificial layer 50, wherein the sacrificial layer 50 is made of silicon oxide, silicon nitride or silicon oxynitride.
The preparation material of the sacrificial layer 50 is different from that of the anode 302, and the etching solution for removing the sacrificial layer 50 is different from that provided during the preparation of the anode 302.
In one embodiment, the step of preparing the light emitting layer 303 on the pixel defining layer 301 further comprises: the first evaporation angle is adopted when the light-emitting layer 303 is prepared, so that the light-emitting layer 303 does not completely cover the auxiliary electrode 40 below the bottom cavity 2082.
By controlling the size of the first evaporation angle, the light emitting layer 303 may not be disposed in the bottom cavity 2082.
Wherein the first evaporation angle may be 90 degrees.
In one embodiment, the step of preparing the cathode 304 further comprises: the cathode 304 is formed in the bottom cavity 2082 by using a second evaporation angle, and the cathode 304 is in contact with the auxiliary electrode 40 in the bottom cavity 2082.
In one embodiment, undercut structure 2 includes a relief 2081, and a bottom cavity 2082 below relief 2081.
In one embodiment, when the cathode 304 is formed after the light-emitting layer 303 is partially disposed in the bottom cavity 2082 by controlling the first evaporation angle, the cathode 304 covers the light-emitting layer 303 in the bottom cavity 2082 by controlling the second evaporation angle, and the cathode 304 and the auxiliary electrode 40 are connected in the bottom cavity 2082.
In one embodiment, the step of removing the sacrificial layer 50 to form the bottom cavity 2082 further comprises: and providing hydrofluoric acid etching liquid, and performing wet etching on the sacrificial layer 50 by using the hydrofluoric acid etching liquid on the whole surface to remove the sacrificial layer 50 and form the bottom cavity 2082.
As shown in fig. 3, an OLED display panel 1 provided in this embodiment of the present invention includes a substrate 10, a TFT device disposed on the substrate 10, and a light emitting device disposed above the TFT device, where the light emitting device includes an anode 302, a pixel defining layer 301, a light emitting layer 303, and a cathode 304, where the OLED display panel 1 further includes an auxiliary electrode 40, the auxiliary electrode 40 is disposed in a same layer as and insulated from the anode 302, a via H is formed in the pixel defining layer 301 in a region above the auxiliary electrode 40, a bottom cavity 2082 and a suspended portion 2081 disposed above the bottom cavity 2082 are formed on an inner side wall of the via H, and the cathode 304 extends into the bottom cavity 2082 through the via H and contacts with the auxiliary electrode 40.
In this embodiment, the OLED display panel 1 includes a substrate 10, a TFT device disposed on the substrate 10, and a light emitting device disposed above the TFT device, where the light emitting device includes an anode 302, a pixel defining layer 301, a light emitting layer 303, and a cathode 304, where the OLED display panel 1 further includes an auxiliary electrode 40, the auxiliary electrode 40 is disposed in the same layer as and insulated from the anode 302, the pixel defining layer 301 in a region above the auxiliary electrode 40 is formed with a via H, an inner sidewall of the via H forms a bottom cavity 2082 and a suspended portion 2081 disposed above the bottom cavity 2082, and the cathode 304 extends into the bottom cavity 2082 through the via H to contact with the auxiliary electrode 40; by arranging the bottom cavity 2082 on the OLED display panel 1, and the bottom cavity 2082 is used for contacting the cathode 304 with the auxiliary electrode 40, the technical problem of uneven brightness caused by large current drop of the cathode 304 in the existing OLED display panel 1 is solved.
The OLED display panel 1 includes a substrate 10, a light shielding layer 201, a buffer layer 202, an active layer 203, a gate insulating layer 204, a gate electrode 205, an interlayer insulating layer 206, a source drain layer 207, a passivation layer 208, a planarization layer 209, an anode 302, a pixel defining layer 301, a light emitting layer 303, and a cathode 304, where the source drain layer 207 includes a source 2071 and a drain 2072.
The TFT device comprises a substrate 10, a light shielding layer 201, a buffer layer 202, an active layer 203, a gate insulating layer 204, a gate electrode 205, an interlayer insulating layer 206, a source-drain electrode layer 207, a passivation layer 208 and a flat layer 209.
The light emitting device includes an anode 302, a pixel defining layer 301, a light emitting layer 303, and a cathode 304.
In one embodiment, the auxiliary electrode 40 includes any one of indium tin oxide/silver/indium tin oxide, indium zinc oxide/silver/indium zinc oxide, indium tin oxide/aluminum/indium tin oxide, or indium zinc oxide/aluminum/indium zinc oxide, and the auxiliary electrode 40 has a thickness ranging from 500 angstroms to 2000 angstroms.
In one embodiment, an orthogonal projection of the bottom cavity 2082 on the substrate 10 overlaps an orthogonal projection of the pixel defining layer 301 on the substrate 10.
Wherein an orthographic projection of the suspended portion 2081 on the substrate 10 coincides with an orthographic projection of the bottom cavity 2082 on the substrate 10.
Wherein the bottom cavity 2082 is a recessed area below the suspended portion 2081.
The via hole H comprises an inner side wall, the bottom cavity 2082 is a space formed by the inner side wall in a concave mode, and the suspended portion 2081 is arranged above the concave portion.
In one embodiment, the cathode 304 is separated by the bottom cavity 2082 to form a first cathode portion 3041 and a second cathode portion 3042 which are insulated from each other, the first cathode portion 3041 is in contact with the auxiliary electrode 40, and the second cathode portion 3042 is disposed above the suspended portion 2081.
A light emitting layer 303 is disposed on a surface of the suspended portion 2081, and a second cathode portion 3042 is disposed on the light emitting layer 303.
The cathode 304 is disconnected at the bottom cavity 2082 by controlling the evaporation angle when the cathode 304 is formed, the first cathode 304 formed after disconnection is disposed on the bottom surface of the via hole H, and one end of the first cathode 304 is disposed in the bottom cavity 2082 and overlapped with the auxiliary electrode 40.
In one embodiment, an orthogonal projection of the first cathode portion 3041 on the substrate 10 has a partial overlapping area with an orthogonal projection of the second cathode portion 3042 on the substrate 10.
The second cathode portion 3042 is disposed on a surface of the suspended portion 2081 near the via hole H, and the entire surface of the second cathode portion 3042 is covered on the surface of the suspended portion 2081.
Wherein one end of the first cathode portion 3041 is disposed directly below the suspended portion 2081.
In one embodiment, the source 2071, the drain 2072 and the auxiliary electrode 40 are Barrier/copper double-layer structures, and may be molybdenum/copper, titanium/copper, molybdenum niobium/copper, molybdenum titanium/copper, etc.
Wherein, the thickness of the Barrier layer is 150 to 350 angstroms, and the thickness of the copper is 3000 to 8000 angstroms.
In one embodiment, the passivation layer 208 may be made of silicon nitride or silicon oxide and may have a thickness of 3000 to 5000 angstroms.
Wherein, a flat layer 209 is further disposed on the passivation layer 208, and the thickness of the flat layer 209 ranges from 1 micrometer to 4 micrometers.
In one embodiment, the region above the auxiliary electrode 40 further includes a suspended portion 2081, the suspended portion 2081 is disposed above the bottom cavity 2082 and suspended, and the suspended portion 2081 is formed by patterning the pixel defining layer 301.
In one embodiment, the cathode 304 extends to the auxiliary electrode 40 along the via H, and there is a surface of the auxiliary electrode 40 in the bottom cavity 2082 that is not covered by the light emitting layer 303, so that the cathode 304 can overlap the auxiliary electrode 40 in the bottom cavity 2082.
In one embodiment, the anode 302 of the light emitting device is a composite layer structure.
Wherein, the composite layer structure can be any one of indium tin oxide/silver/indium tin oxide, indium zinc oxide/silver/indium zinc oxide, indium tin oxide/aluminum/indium tin oxide or indium zinc oxide/aluminum/indium zinc oxide.
The OLED display panel 1 provided by the present application further includes an auxiliary electrode 40 and a bottom cavity 2082 disposed above the auxiliary electrode 40, the cathode 304 is connected to the auxiliary electrode 40 in the bottom cavity 2082, and since the resistance of the auxiliary electrode 40 is small, the current drop is reduced, thereby improving the problem of large current drop of the large-sized OLED display panel 1. The improvement of the preparation process is as follows: by manufacturing the auxiliary electrode 40 and a layer of sacrificial layer 50, and after preparing the anode 302, the sacrificial layer 50 is removed by applying an etching solution to the entire surface, thereby forming the bottom cavity 2082. The bottom cavity 2082 obtained can not completely cover the surface of the auxiliary electrode 40 when the organic functional layer is evaporated, and the cathode 304 can be overlapped with the auxiliary electrode 40 in an undercut structure. Meanwhile, the method for manufacturing the bottom cavity 2082 by removing the sacrificial layer 50 can reduce the complexity of the process and the cost.
In an embodiment, specific parameters of the bottom cavity 2082 are as shown in fig. 4, and fig. 4 is a schematic cross-sectional view of the undercut structure 2, where the depth of the bottom cavity 2082 is a, the height of the bottom cavity 2082 is d, the plating depth of the cathode 304 is b, and the plating depth of the light emitting layer 303 is c.
Wherein the depth a of the bottom cavity 2082 ranges from 0.5 micrometers to 2 micrometers.
Wherein the coating depth b of the cathode 304 is greater than or equal to 0.2 micrometers and less than or equal to 1 micrometer.
Wherein the coating depth c of the luminescent layer 303 is greater than or equal to 0 micron and less than or equal to 0.2 micron.
Wherein the thickness d of the bottom cavity 2082 ranges from 0.1 micrometer to 0.5 micrometer.
The OLED display panel provided in this embodiment includes a substrate, a TFT device disposed on the substrate, and a light emitting device disposed above the TFT device, where the light emitting device includes an anode, a pixel defining layer, a light emitting layer, and a cathode, where the OLED display panel further includes an auxiliary electrode, the auxiliary electrode is disposed on the same layer as the anode and in an insulating manner, a via hole is formed in the pixel defining layer in an area above the auxiliary electrode, a bottom cavity and a suspended portion disposed above the bottom cavity are formed in an inner sidewall of the via hole, and the cathode extends into the bottom cavity through the via hole and contacts with the auxiliary electrode; through OLED display panel sets up the end chamber, the end chamber is used for the negative pole with auxiliary electrode touches and connects, has alleviated current of the negative pole and has dropped the big technical problem that leads to luminance uneven that has existed OLED display panel.
The OLED display panel and the method for manufacturing the same provided in the embodiments of the present application are described in detail above, and the principle and the embodiment of the present application are explained in the present application by applying specific examples, and the description of the embodiments above is only used to help understanding the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A preparation method of an OLED display panel is characterized by comprising the following steps:
providing a substrate;
preparing a driving circuit layer on the substrate;
preparing an anode and an auxiliary electrode on the driving circuit layer, wherein the auxiliary electrode and the anode are in the same layer and are arranged in an insulating manner;
preparing a sacrificial layer on the upper surface of the auxiliary electrode;
preparing a pixel defining layer on the flat layer, wherein the pixel defining layer comprises a through hole which exposes part of the sacrificial layer and part of the auxiliary electrode;
removing the sacrificial layer to form a bottom cavity between the pixel defining layer and the auxiliary electrode;
and preparing a light-emitting layer and a cathode on the pixel defining layer, wherein the cathode is in contact with the auxiliary electrode in the bottom cavity.
2. The method of manufacturing an OLED display panel as claimed in claim 1, wherein the step of manufacturing a light emitting layer on the pixel defining layer further includes:
and a first evaporation angle is adopted when the luminescent layer is prepared, so that the luminescent layer does not completely cover the auxiliary electrode below the bottom cavity.
3. The method of manufacturing an OLED display panel of claim 1 wherein the step of preparing the cathode further comprises:
and a second evaporation angle is adopted during the preparation of the cathode, the cathode is formed in the bottom cavity, and the cathode is in contact with the auxiliary electrode in the bottom cavity.
4. The method of manufacturing an OLED display panel of claim 1, wherein the step of removing the sacrificial layer to form the bottom cavity further comprises:
and providing hydrofluoric acid etching liquid, and performing wet etching on the sacrificial layer by using the hydrofluoric acid etching liquid on the whole surface to remove the sacrificial layer and form the bottom cavity.
5. The method of manufacturing an OLED display panel according to claim 1, wherein the step of manufacturing the sacrificial layer further includes:
forming a silicon oxide, silicon nitride or silicon oxynitride film layer, forming the silicon oxide, silicon nitride or silicon oxynitride film layer into the sacrificial layer, wherein the sacrificial layer is made of silicon oxide, silicon nitride or silicon oxynitride.
6. An OLED display panel, comprising:
a substrate;
a TFT device disposed on the substrate;
a light emitting device disposed over the TFT device, the light emitting device including an anode, a pixel defining layer, a light emitting layer, a cathode;
the OLED display panel comprises an auxiliary electrode, the auxiliary electrode and the anode are arranged on the same layer and in an insulating mode, a via hole is formed in the pixel defining layer in the area above the auxiliary electrode, a bottom cavity and a suspended portion arranged above the bottom cavity are formed in the inner side wall of the via hole, and the cathode extends into the bottom cavity through the via hole and is in contact with the auxiliary electrode.
7. The OLED display panel of claim 6, wherein the auxiliary electrode includes any one of indium tin oxide/silver/indium tin oxide, indium zinc oxide/silver/indium zinc oxide, indium tin oxide/aluminum/indium tin oxide, or indium zinc oxide/aluminum/indium zinc oxide, and a thickness of the auxiliary electrode ranges from 500 angstroms to 2000 angstroms.
8. The OLED display panel of claim 7, wherein an orthographic projection of the bottom cavity on the substrate overlaps an orthographic projection of the pixel defining layer on the substrate.
9. The OLED display panel of claim 8, wherein the cathode is partitioned by the bottom cavity to form a first cathode portion and a second cathode portion insulated from each other, the first cathode portion being in contact with the auxiliary electrode, the second cathode portion being disposed above the suspended portion.
10. The OLED display panel of claim 9, wherein an orthographic projection of the first cathode portion on the substrate has a partial overlap area with an orthographic projection of the second cathode portion on the substrate.
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