CN113088873B - A kind of ethanol vapor and gap sensitive element and its development method - Google Patents
A kind of ethanol vapor and gap sensitive element and its development method Download PDFInfo
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- CN113088873B CN113088873B CN202110284963.9A CN202110284963A CN113088873B CN 113088873 B CN113088873 B CN 113088873B CN 202110284963 A CN202110284963 A CN 202110284963A CN 113088873 B CN113088873 B CN 113088873B
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims description 7
- 239000000919 ceramic Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 58
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000007772 electrode material Substances 0.000 claims abstract description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000004544 sputter deposition Methods 0.000 claims description 78
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 66
- 229910052786 argon Inorganic materials 0.000 claims description 33
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 25
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000003517 fume Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 238000004506 ultrasonic cleaning Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 9
- 230000006128 skin development Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 27
- 239000013077 target material Substances 0.000 description 20
- 235000019441 ethanol Nutrition 0.000 description 9
- 238000005086 pumping Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000010963 304 stainless steel Substances 0.000 description 2
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/14—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
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Abstract
The invention relates to an ethanol vapor and gap sensing element, which comprises a ceramic substrate, a coil, an insulating layer and an electrode, wherein the ceramic substrate is provided with a plurality of grooves; the ethanol steam and the gap sensitive element are in a coil type; the length of the ceramic substrate is 50mm, the width is 38.5mm, and the thickness is 1 mm; the line width and the line distance of the coil are both 0.5mm, and the number of turns is 10; the insulating layer structure is rectangular, the insulating layer is made of aluminum oxide, the length of the insulating layer is 27.5mm, and the width of the insulating layer is 3 mm; the electrode structure is non-interdigital, the electrode material is tin dioxide, the radius of the electrode is 2mm, the length is 31.43mm, and the width is 1 mm; the sensing element is sensitive to ethanol vapor and to changes in the non-contact gap. The ethanol steam and gap sensing element developed by the invention has small size, thin thickness, simple structure and low cost, can realize gas and non-contact gap measurement by using a single sensing element, is suitable for measuring gas and gap between narrow layers of industrial equipment, and can also be used in the fields of multifunctional electronic skin development and the like.
Description
Technical Field
The invention belongs to the technical field of sensor measurement, and particularly relates to a gas gap sensor.
Background
A plurality of narrow interlayer structures exist in key parts of modern large-scale industrial equipment, and in order to ensure the safety of a system, the narrow curved surface interlayer gap and ethanol steam need to be measured. Thin gap sensors and thin gas sensors have been developed based on the prior art, but due to the limited size of the field space structure, it is difficult to install a plurality of sensors, and thus it is necessary to reduce the number of sensors placed in the narrow interlayer structure as much as possible. However, the sensing elements developed in the prior art do not have the function of simultaneously measuring gas and non-contact gap. Therefore, how to make a single sensitive element have the capability of measuring the non-contact gap and the ethanol vapor is a difficult problem to solve.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a scheme of a sensitive element for simultaneously measuring ethanol steam and gap sensitivity and a preparation method thereof. By designing an ethanol vapor and gap sensing element, the element comprises: ceramic substrate, coil, insulating layer, electrode;
the ethanol steam and the gap sensitive element are in a coil type;
the length of the ceramic substrate is 50mm, the width of the ceramic substrate is 38.5mm, and the thickness of the ceramic substrate is 1 mm;
the line width and the line distance of the coil are both 0.5mm, and the number of turns is 10;
the insulating layer structure is rectangular, the insulating layer is made of aluminum oxide, the length of the insulating layer is 27.5mm, and the width of the insulating layer is 3 mm;
the electrode structure is non-interdigital, the electrode material is tin dioxide, the radius of the electrode is 2mm, the length of the electrode is 31.43mm, and the width of the electrode is 1 mm; the sensing element is sensitive to ethanol vapor and to changes in the non-contact gap.
Meanwhile, the invention also provides a preparation method for developing the ethanol steam and gap sensitive element, which comprises the following steps:
(f) cleaning a ceramic substrate, and respectively ultrasonically cleaning the ceramic substrate by acetone, absolute ethyl alcohol and deionized water;
(g) sputtering electrode, preparing electrode by magnetron sputtering coating machine radio frequency sputtering;
(h) sputtering an insulating layer, and preparing the insulating layer by direct current sputtering of a magnetron sputtering coating machine;
(i) sputtering the coil, preparing the coil by the radio frequency sputtering of a magnetron sputtering coating machine;
(j) annealing treatment, namely annealing for 10 hours in an atmospheric environment at 300 ℃;
the ceramic substrate cleaning specifically comprises the following steps: ultrasonically cleaning the ceramic substrate by adopting acetone, absolute ethyl alcohol and deionized water for 15 minutes respectively; blowing the mixture by using nitrogen and placing the mixture in a fume hood for later use;
the sputtering electrode specifically comprises: installing a tin dioxide target material on a magnetron target by adopting a magnetron sputtering coating machine, wherein the purity of the tin dioxide target material is 99.99 percent, covering an electrode mask plate on the ceramic substrate, placing the ceramic substrate on a sputtering table board, sequentially starting a mechanical pump and a molecular pump to pump vacuum until the vacuum degree of a vacuum cavity is less than or equal to 8 multiplied by 10 < -4 > Pa, and starting sputtering; meanwhile, argon is introduced at a flow rate of 40sccm, the purity of the argon is 99.999%, the working pressure of the radio-frequency sputtering is 0.5Pa, the sputtering power is 150W, and the sputtering time is 60 minutes;
the sputtering insulating layer specifically comprises: an aluminum target material is installed on a magnetron sputtering coating machine, the purity of the aluminum target material is 99.99%, a mechanical pump and a molecular pump are started in sequence to start vacuum pumping until the vacuum degree of a cavity is less than or equal to 8 x 10 < -4 > Pa, sputtering is started, argon and oxygen are introduced simultaneously, the flow rate of the argon is 50sccm, the flow rate of the oxygen is 1.2sccm, the purities of the argon and the oxygen are both 99.999%, the working pressure of direct-current sputtering is 1Pa, the sputtering power is 150W, and the sputtering time is 120 minutes;
the sputtering coil is specifically as follows: installing a tin dioxide target material on a magnetron target by adopting a magnetron sputtering coating machine, wherein the purity of the tin dioxide target material is 99.99 percent, covering a coil mask plate on the ceramic substrate, placing the ceramic substrate on a sputtering table board, sequentially starting a mechanical pump and a molecular pump to pump vacuum until the vacuum degree of a vacuum cavity is less than or equal to 8 multiplied by 10 < -4 > Pa, and starting sputtering; meanwhile, argon is introduced at a flow rate of 40sccm, the purity of the argon is 99.999%, the working pressure of the radio-frequency sputtering is 0.5Pa, the sputtering power is 150W, and the sputtering time is 60 minutes;
the annealing treatment specifically comprises the following steps: and annealing for 10 hours in an annealing furnace at 300 ℃ in the atmospheric environment to obtain ethanol vapor and the gap sensitive element.
The beneficial effects of the ethanol steam and the gap sensitive element are as follows:
(1) non-contact gap measurement is realized by acquiring the impedance of the element; gas measurement is achieved by taking the resistance of the element; gas and non-contact gap measurements can be accomplished with only one set of sensor system.
(2) The element has small size and thin thickness, and is suitable for being installed in an interlayer structure with narrow space to complete measurement tasks.
(3) The element has simple structure and low cost, and can be applied to the fields of development of multifunctional electronic skins and the like.
The preparation method of the ethanol steam and gap sensitive element has the beneficial effects that: the preparation is completed by a magnetron sputtering technology, the process precision is high, the repeatability is good, and the commercial and industrial production is easy to realize.
Drawings
FIG. 1 is a dimensional view of a ceramic substrate, an electrode mask, an insulating layer mask and a coil mask.
FIG. 2 schematic representation of a magnetron sputtering electrode
Fig. 3 is a top view and a cross-sectional view of an electrode and a ceramic substrate.
Fig. 4 is a schematic diagram of sputtering an insulating layer.
FIG. 5 is a top view and a cross-sectional view of an insulating layer, an electrode, and a ceramic substrate.
Fig. 6 is a schematic diagram of a sputtering coil.
FIG. 7 is a top view and a cross-sectional view of ethanol vapor and a gap sensor.
In fig. 1 to 7, a denotes a ceramic substrate; b represents an electrode mask plate; c represents an insulating layer mask plate; d represents a coil mask plate; e represents a tin dioxide target material; f represents a vacuum chamber; g represents an electrode; h represents an aluminum target material; i represents an insulating layer; j represents a coil.
Detailed Description
In order that the invention may be more fully understood, a more particular description of the invention will now be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The following embodiments are provided to describe the development method of the ethanol vapor and gap sensor with gas and non-contact gap measurement functions in the present invention:
the length of the ceramic substrate (a) is 50mm, the width is 38.5mm, and the thickness is 1 mm; the length of the electrode mask plate (b) is 50mm, the width is 38.5mm, the thickness is 0.01mm, the radius of the electrode is 2mm, the length of the electrode is 31.43mm, and the width of the electrode is 1 mm; the insulating layer mask plate (c) has the length of 50mm, the width of 38.5mm, the thickness of 0.01mm, the length of the insulating layer of 27.5mm and the width of the insulating layer of 3 mm; the length of the coil mask plate (d) is 50mm, the width is 38.5mm, the thickness is 0.01mm, the line width and the line distance of the coil are both 0.5mm, and the number of turns is 10; the mask plates (b, c and d) are all made of 304 stainless steel by a photochemical etching process.
Respectively ultrasonically cleaning the ceramic substrate (a), the electrode mask plate (b), the insulating layer mask plate (c) and the coil mask plate (d) for 15 minutes by adopting acetone (analytically pure), absolute ethyl alcohol (analytically pure) and deionized water; and then placed in a fume hood for later use by blowing with nitrogen. Removing organic matters on the surfaces of the ceramic substrate (a) and the mask plates (b, c and d) by using acetone, removing acetone remained on the surfaces of the ceramic substrate (a) and the mask plates (b, c and d) by using absolute ethyl alcohol, and removing the absolute ethyl alcohol remained on the surfaces of the ceramic substrate (a) and the mask plates (b, c and d) by using deionized water.
Installing a tin dioxide target material (e) on a magnetron target by adopting a magnetron sputtering film plating machine, covering an electrode mask plate (b) on a ceramic substrate (a) when the purity of the tin dioxide target material (e) is 99.99 percent, then placing the electrode mask plate (b) on a sputtering table top, and starting to vacuumize. The industrial personal computer is operated to cover the vacuum cavity cover, the mechanical pump and the molecular pump are started in sequence to start vacuum pumping, and sputtering is started when the vacuum degree of the vacuum cavity (f) is less than or equal to 8 multiplied by 10 < -4 > Pa, as shown in figure 2. And introducing argon gas with the purity of 99.999 percent and the flow rate of 40sccm by operating a control machine, and using a radio frequency sputtering mode, wherein the working pressure is 0.5Pa, the sputtering power is 150W, and the sputtering time is 30-300 minutes.
After magnetron sputtering, the argon gas is stopped to be introduced by operating the industrial personal computer, the charging valve is opened, and the electrode mask plate (b) and the ceramic substrate (a) are taken out when the pressure of the vacuum cavity (f) is the same as the atmospheric pressure. At this time, an electrode (g) is formed on the ceramic substrate (a).
An aluminum target material (h) is arranged on a magnetron target by adopting a magnetron sputtering film plating machine, the purity of the aluminum target material (h) is 99.99 percent, an insulating layer mask plate (c) is covered on a ceramic substrate (a), and then the ceramic substrate (a) and the insulating layer mask plate (c) are placed on a sputtering table top and vacuumized. The industrial personal computer is operated to cover the vacuum cavity cover, the mechanical pump and the molecular pump are started in sequence to start vacuum pumping, and sputtering is started when the vacuum degree of the vacuum cavity (f) is less than or equal to 8 multiplied by 10 < -4 > Pa, as shown in figure 4. Argon and oxygen are introduced through an operating control machine, the purity of the argon and the oxygen is 99.999 percent, the flow rate of the argon is 50sccm, the flow rate of the oxygen is 1.2sccm, a direct-current sputtering mode is used, the working pressure is 1Pa, the sputtering power is 150W, and the sputtering time is 60-600 minutes.
After magnetron sputtering, the industrial personal computer is operated, argon and oxygen are stopped to be introduced, the inflation valve is opened, and the insulating layer mask plate (c) and the ceramic substrate (a) are taken out when the pressure of the vacuum cavity (f) is equal to the atmospheric pressure. At this time, an insulating layer (i) is formed on the ceramic substrate (a).
Installing a tin dioxide target material (e) on a magnetron target by adopting a magnetron sputtering film plating machine, covering a coil mask plate (d) on a ceramic substrate (a) when the purity of the tin dioxide target material (e) is 99.99 percent, then placing the coil mask plate on a sputtering table top, and starting to vacuumize. The industrial personal computer is operated to cover the vacuum cavity cover, the mechanical pump and the molecular pump are started in sequence to start vacuum pumping, and sputtering is started when the vacuum degree of the vacuum cavity (f) is less than or equal to 8 multiplied by 10 < -4 > Pa, as shown in figure 6. And introducing argon gas with the purity of 99.999 percent and the flow rate of 40sccm by operating a control machine, and using a radio frequency sputtering mode, wherein the working pressure is 0.5Pa, the sputtering power is 150W, and the sputtering time is 30-300 minutes.
After magnetron sputtering, the argon gas is stopped to be introduced by operating the industrial personal computer, the inflation valve is opened, and the coil mask plate (d) and the ceramic substrate (a) are taken out when the pressure of the vacuum cavity (f) is the same as the atmospheric pressure. At this time, a coil (j) is formed on the ceramic substrate (a).
And annealing for 10 hours in an atmosphere environment at 300 ℃ in an annealing furnace, so that the compactness and stability of the semiconductor material are enhanced, and the ethanol steam and gap sensitive element with gas and non-contact gap measurement functions is obtained.
Examples
The length of the ceramic substrate is 50mm, the width is 38.5mm, and the thickness is 1 mm; the length of the electrode mask plate is 50mm, the width is 38.5mm, the thickness is 0.01mm, the radius of the electrode is 2mm, the length of the electrode is 31.43mm, and the width of the electrode is 1 mm; the insulating layer mask plate is 50mm in length, 38.5mm in width, 0.01mm in thickness, 27.5mm in length and 3mm in width; the length of the coil mask plate is 50mm, the width is 38.5mm, the thickness is 0.01mm, the line width and the line distance of the coil are both 0.5mm, and the number of turns is 10; the mask plates are all made of 304 stainless steel by a photochemical etching process.
Respectively ultrasonically cleaning the ceramic substrate, the electrode mask plate, the insulating layer mask plate and the coil mask plate for 15 minutes by adopting acetone (analytically pure), absolute ethyl alcohol (analytically pure) and deionized water; and then placed in a fume hood for later use by blowing with nitrogen. And removing organic matters on the surfaces of the ceramic substrate and the mask plate by using acetone, removing acetone remained on the surfaces of the ceramic substrate and the mask plate by using absolute ethyl alcohol, and removing the absolute ethyl alcohol remained on the surfaces of the ceramic substrate and the mask plate by using deionized water.
A magnetron sputtering coating machine is adopted to install a tin dioxide target material on a magnetron target, the purity of the tin dioxide target material is 99.99 percent, an electrode mask plate is covered on a ceramic substrate, and then the electrode mask plate and the ceramic substrate are placed on a sputtering table top and vacuumized. The industrial personal computer is operated, the vacuum cavity cover is covered, the mechanical pump and the molecular pump are started in sequence to start vacuum pumping, and sputtering is started when the vacuum degree of the vacuum cavity is less than or equal to 8 multiplied by 10 < -4 > Pa. Argon gas is introduced through an operating control machine, the purity of the argon gas is 99.999 percent, the flow rate of the argon gas is 40sccm, a radio frequency sputtering mode is used, the working pressure is 0.5Pa, the sputtering power is 150W, and the sputtering time is 60 minutes.
After magnetron sputtering, the argon gas is stopped to be introduced by operating the industrial personal computer, the charging valve is opened, and the electrode mask plate and the ceramic substrate are taken out when the pressure intensity of the vacuum cavity is the same as the atmospheric pressure. At this time, an electrode is formed on the ceramic substrate.
An aluminum target material is arranged on a magnetron sputtering coating machine, the purity of the aluminum target material is 99.99 percent, an insulating layer mask plate is covered on a ceramic substrate, and then the insulating layer mask plate and the ceramic substrate are placed on a sputtering table top and vacuumized. The industrial personal computer is operated, the vacuum cavity cover is covered, the mechanical pump and the molecular pump are started in sequence to start vacuum pumping, and sputtering is started when the vacuum degree of the vacuum cavity is less than or equal to 8 multiplied by 10 < -4 > Pa. Argon and oxygen are introduced through an operating control machine, the purity of the argon and the oxygen is 99.999 percent, the flow rate of the argon is 50sccm, the flow rate of the oxygen is 1.2sccm, a direct-current sputtering mode is used, the working pressure is 1Pa, the sputtering power is 150W, and the sputtering time is 120 minutes.
After magnetron sputtering, the argon and oxygen are stopped to be introduced by operating the industrial personal computer, the inflation valve is opened, and the insulating layer mask plate and the ceramic substrate are taken out when the pressure intensity of the vacuum cavity is the same as the atmospheric pressure. At this time, an insulating layer is formed on the ceramic substrate.
A magnetron sputtering coating machine is adopted, a tin dioxide target material is arranged on a magnetron target, the purity of the tin dioxide target material is 99.99 percent, a coil mask plate is covered on a ceramic substrate, then the coil mask plate and the ceramic substrate are placed on a sputtering table top, and vacuumizing is started. The industrial personal computer is operated, the vacuum cavity cover is covered, the mechanical pump and the molecular pump are started in sequence to start vacuum pumping, and sputtering is started when the vacuum degree of the vacuum cavity is less than or equal to 8 multiplied by 10 < -4 > Pa. Argon gas is introduced through an operating control machine, the purity of the argon gas is 99.999 percent, the flow rate of the argon gas is 40sccm, a radio frequency sputtering mode is used, the working pressure is 0.5Pa, the sputtering power is 150W, and the sputtering time is 60 minutes.
After magnetron sputtering, the argon gas is stopped to be introduced by operating the industrial personal computer, the charging valve is opened, and the coil mask plate and the ceramic substrate are taken out when the pressure intensity of the vacuum cavity is the same as the atmospheric pressure. At this time, a coil is formed on the ceramic substrate.
And annealing for 10 hours in an atmosphere environment at 300 ℃ in an annealing furnace, so that the compactness and stability of the semiconductor material are enhanced, and the ethanol steam and gap sensitive element with gas and non-contact gap measurement functions is obtained.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
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