CN113075856B - Mask pattern, mask and method for forming semiconductor structure - Google Patents
Mask pattern, mask and method for forming semiconductor structure Download PDFInfo
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- CN113075856B CN113075856B CN202010011151.2A CN202010011151A CN113075856B CN 113075856 B CN113075856 B CN 113075856B CN 202010011151 A CN202010011151 A CN 202010011151A CN 113075856 B CN113075856 B CN 113075856B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
A mask pattern, a mask and a method for forming a semiconductor structure, wherein the mask pattern comprises: the first graphic area comprises a plurality of first target graphics, and the plurality of first target graphics are arranged along a first direction; the first cutting pattern area, the first pattern area and the second cutting pattern area are respectively positioned at two sides of the first pattern area, are arranged along a second direction, and are vertical to the first direction and the second direction; a first auxiliary pattern located within the first cutting pattern region, and the first auxiliary pattern is adjacent to a plurality of the first target patterns; and a second auxiliary pattern positioned in the second cutting pattern area and adjacent to the first target patterns. The mask pattern is beneficial to improving the uniformity of the size of the photoetching pattern.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing, and in particular, to a mask pattern, a mask, and a method for forming a semiconductor structure.
Background
Photolithography is a critical technique in semiconductor fabrication that enables transferring patterns from a reticle to a wafer surface to form a semiconductor product that meets design requirements. In semiconductor manufacturing, as the design size is continuously reduced, the design size is more and more close to the limit of a photoetching imaging system, the diffraction effect of light becomes more and more obvious, optical image degradation is finally generated on a design pattern, the actually formed photoetching pattern is severely distorted relative to the pattern on a mask plate, and finally the photoetching pattern formed by photoetching on a silicon wafer is different from the design pattern, and the phenomenon is called optical proximity effect (OPE: optical Proximity Effect).
The scattering bar (SCATTERING BAR, SB) is a sub-resolution auxiliary pattern, which uses auxiliary pattern bars around the Main pattern (Main Feature) to improve the lithography quality of the Main pattern. Wherein the main pattern is an exposable pattern and the scattering bars are non-exposable patterns.
However, the prior art transfers reticle patterns to feature sizes at both ends and the center of the pattern on the wafer are not uniform.
Disclosure of Invention
The invention solves the technical problem of providing a mask pattern, a mask and a method for forming a semiconductor structure so as to improve the uniformity of the size of a photoetching pattern.
In order to solve the technical problems, the technical scheme of the invention provides a mask pattern, which comprises the following steps: the first graphic area comprises a plurality of first target graphics, and the plurality of first target graphics are arranged along a first direction; the first cutting pattern area, the first pattern area and the second cutting pattern area are respectively positioned at two sides of the first pattern area, are arranged along a second direction, and are vertical to the first direction and the second direction; a first auxiliary pattern located within the first cutting pattern region, and the first auxiliary pattern is adjacent to a plurality of the first target patterns; and a second auxiliary pattern positioned in the second cutting pattern area and adjacent to the first target patterns.
Optionally, the method further comprises: the second graph area comprises a plurality of second target graphs, the second target graphs are arranged along the first direction, and the second cutting graph area is positioned between the first graph area and the second graph area; the second cutting pattern area and the third cutting pattern area are respectively positioned at two sides of the second pattern area, and are arranged along a second direction; and a third auxiliary pattern positioned in the third cutting pattern area, and the third auxiliary pattern is adjacent to a plurality of the second target patterns.
Optionally, the first auxiliary graph includes: a plurality of first auxiliary parts which are mutually separated and extend along the second direction, and each first auxiliary part is adjacent to one first target pattern.
Optionally, the first auxiliary graph further includes: and the second auxiliary parts are adjacent to the first auxiliary parts and extend along the first direction.
Optionally, the third auxiliary graph includes: a plurality of third auxiliary portions extending along the second direction and separated from each other, and each of the third auxiliary portions is adjacent to one of the second target patterns.
Optionally, the third auxiliary graph further includes: and a fourth auxiliary portion adjacent to the plurality of third auxiliary portions, and the fourth auxiliary portion extends along the first direction.
Optionally, the central axes of the first target patterns and the corresponding central axes of the second target patterns do not coincide, the second auxiliary patterns include a plurality of fifth auxiliary portions and a plurality of sixth auxiliary portions, the plurality of fifth auxiliary portions extend along the second direction, the plurality of sixth auxiliary portions extend along the second direction, one fifth auxiliary portion abuts one first target pattern, and one sixth auxiliary portion abuts one second target pattern.
Optionally, the second auxiliary graph further includes: a seventh auxiliary portion extends along the first direction and is contiguous with the fifth auxiliary portions and the sixth auxiliary portions.
Optionally, the method further comprises: a fourth cutting pattern region located at one side or both sides of the first pattern region; and a plurality of fourth auxiliary patterns positioned in the fourth cutting pattern area, wherein the fourth auxiliary patterns extend along a second direction.
Optionally, each of the fourth auxiliary patterns is adjacent to one of the fifth auxiliary portions.
Optionally, when the central axis of each first target pattern and the central axis of the corresponding second target pattern are coincident, the second auxiliary pattern includes a plurality of eighth auxiliary portions, and two ends of one eighth auxiliary portion are respectively adjacent to the first target pattern and the second target pattern.
Optionally, the method further comprises: a fourth cutting pattern region located at one side or both sides of the first pattern region; a plurality of fifth auxiliary patterns located within the fourth cutting pattern region, and the fourth auxiliary patterns extend in a second direction.
Optionally, each of the fifth auxiliary patterns is adjacent to one eighth auxiliary portion.
Correspondingly, the technical scheme of the invention also provides a mask plate, wherein the mask plate is provided with a graph, and the graph comprises: the first graphic area comprises a plurality of first target graphics, and the plurality of first target graphics are arranged along a first direction; the first cutting pattern area, the first pattern area and the second cutting pattern area are respectively positioned at two sides of the first pattern area, are arranged along a second direction, and are vertical to the first direction and the second direction; a first auxiliary pattern located within the first cutting pattern region, and the first auxiliary pattern is adjacent to a plurality of the first target patterns; and a second auxiliary pattern positioned in the second cutting pattern area and adjacent to the first target patterns.
Correspondingly, the technical scheme of the invention also provides a method for forming the semiconductor structure, which comprises the following steps: providing a substrate, wherein the surface of the substrate is provided with a layer to be etched; providing a mask plate, wherein the mask plate is provided with a graph, and the graph comprises: the first graphic area comprises a plurality of first target graphics, and the plurality of first target graphics are arranged along a first direction; the first cutting pattern area, the first pattern area and the second cutting pattern area are respectively positioned at two sides of the first pattern area, are arranged along a second direction, and are vertical to the first direction and the second direction; a first auxiliary pattern located within the first cutting pattern region, and the first auxiliary pattern is adjacent to a plurality of the first target patterns; a second auxiliary pattern located within the second cut pattern region, and the second auxiliary pattern being contiguous with a number of the first target patterns; using the mask plate as a mask, performing a patterning process on the substrate to form an initial semiconductor structure, wherein the initial semiconductor structure comprises a first structure, a second structure and a third structure, the first structure corresponds to a first pattern area, the second structure corresponds to a first cutting pattern area, and the third structure corresponds to a second cutting pattern area; and removing the second structure and the third structure.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
In the mask pattern provided by the technical scheme of the invention, the first auxiliary pattern is positioned in the first cutting pattern area and is adjacent to a plurality of first target patterns; and the second auxiliary patterns are positioned in the second cutting pattern area and are adjacent to the first target patterns, so that the pattern density in the first cutting pattern area is close to the pattern density in the first pattern area, the pattern density in the second cutting pattern area is smaller than the pattern density in the first pattern area, and the uniformity of the pattern size of a part corresponding to the first pattern area is improved when pattern transfer is carried out by the first pattern area, the first cutting pattern area and the second cutting pattern area.
Further, the second cutting pattern area is located at one side of the first pattern area, the second cutting pattern area is located at one side of the second pattern area, and when the central axes of the first target patterns and the second target patterns do not overlap, the second auxiliary patterns include: a plurality of fifth auxiliary parts and a plurality of sixth auxiliary parts, and a seventh auxiliary part, wherein the plurality of fifth auxiliary parts extend along the second direction, the plurality of sixth auxiliary parts extend along the second direction, the seventh auxiliary part extends along the first direction, one fifth auxiliary part is adjacent to one first target pattern, one sixth auxiliary part is adjacent to one second target pattern, and the seventh auxiliary part is adjacent to the plurality of fifth auxiliary parts and the plurality of sixth auxiliary parts, so that the pattern density on one side of the first pattern area and the pattern density on one side of the second cutting pattern area are smaller, and at the same time, the pattern density on one side of the second pattern area and the pattern density on one side of the second cutting pattern area are smaller. And then, when the first pattern area, the second pattern area and the second cutting pattern area are used for pattern transfer, uniformity of pattern size of a part corresponding to the first pattern area is improved, and uniformity of pattern size of a part corresponding to the second pattern area is also improved.
Further, when the second cutting pattern area is located at one side of the first pattern area and the second cutting pattern area is located at one side of the second pattern area, the central axes of the first target patterns and the second target patterns are coincident, as the first auxiliary patterns comprise a plurality of eighth auxiliary parts, two ends of one eighth auxiliary part are respectively adjacent to the first target patterns and the second target patterns, the pattern density of one side of the first pattern area and the pattern density of the second cutting pattern area are smaller, and meanwhile, the pattern density of one side of the second pattern area and the pattern density of the second cutting pattern area are smaller. And then, when the first pattern area, the second pattern area and the second cutting pattern area are used for pattern transfer, uniformity of pattern size of a part corresponding to the first pattern area is improved, and uniformity of pattern size of a part corresponding to the second pattern area is also improved.
Drawings
FIGS. 1 to 5 are schematic diagrams of structures of mask patterns;
FIG. 6 is a schematic diagram of a reticle pattern in an embodiment of the invention;
FIG. 7 is a schematic diagram of a reticle pattern in another embodiment of the invention;
Fig. 8 to 9 are schematic structural views illustrating steps of a method for forming a semiconductor structure according to an embodiment of the present invention.
Detailed Description
As described in the background art, the existing mask pattern is adopted for photoetching, and the formed pattern has poor size uniformity.
Fig. 1 to 5 are schematic structural diagrams of a mask pattern.
Referring to fig. 1, providing a reticle pattern includes: a pattern area a including a plurality of target patterns 100, the plurality of target patterns 100 being arranged in a first direction X, and the target patterns 100 extending in a second direction Y.
Referring to fig. 2, in the second direction Y, a cutting pattern area b is disposed at an edge of the pattern area a, and the cutting pattern area b includes a plurality of auxiliary patterns 110.
Referring to fig. 3, a substrate 120 is provided; forming a photoresist (not shown) on the substrate 120; manufacturing a mask 130 according to the mask pattern; and photoetching the photoresist by taking the mask plate 130 as a mask to form a patterned layer 140.
Referring to fig. 4, the patterned layer 140 is used as a mask to perform a first etching on the substrate 120 to form an initial semiconductor structure 150, where the initial semiconductor structure 150 includes: a first structure 151 and a second structure 152, wherein the first structure 151 corresponds to a pattern area a, and the second structure 152 corresponds to a cutting pattern area b.
Referring to fig. 5, a second etching is performed to remove the second structure 152.
In the above method, by disposing the cutting pattern region b at the edge of the pattern region a in the second direction Y, the cutting pattern region b includes a plurality of auxiliary patterns 110, and the auxiliary patterns 110 can improve the pattern density around the target pattern 100 at the inner edge of the pattern region a, that is, the pattern density at the edge of the pattern region a and the pattern density in the pattern region a have small differences, so that the mask pattern is transferred into the substrate 120 by photolithography with the corrected mask, thereby improving the uniformity of the size of the pattern formed in the substrate 120.
However, since the pattern density difference on both sides of the pattern region a in the second direction Y is still large, the etching loading effect (etch loading effect) is easily generated, resulting in large size difference between both ends and the center of the formed pattern, i.e., the uniformity of the size of the formed pattern is still poor.
In order to solve the above technical problems, an embodiment of the present invention provides a mask pattern, including: the first graphic area comprises a plurality of first target graphics, and the plurality of first target graphics are arranged along a first direction; the first cutting pattern area, the first pattern area and the second cutting pattern area are respectively positioned at two sides of the first pattern area, are arranged along a second direction, and are vertical to the first direction and the second direction; first auxiliary patterns located in the first cutting pattern region, and each of the first auxiliary patterns is adjacent to one of the first target patterns; and second auxiliary patterns positioned in the second cutting pattern area, and each second auxiliary pattern is adjacent to one first target pattern. The mask pattern is beneficial to improving the uniformity of the size of the photoetching pattern.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 6 is a schematic diagram of a mask pattern according to an embodiment of the present invention.
Referring to fig. 6, a mask pattern includes: a first graphic area A1, wherein the first graphic area A1 includes a plurality of first target graphics 200, and the plurality of first target graphics 200 are arranged along a first direction X; the first cutting pattern area B1 and the second cutting pattern area B2 are respectively positioned at two sides of the first pattern area A1, the first cutting pattern area B1, the first pattern area A1 and the second cutting pattern area B2 are arranged along the second direction Y, and the first direction X and the second direction Y are vertical; a first auxiliary pattern 210 located within the first cutting pattern region B1, and the first auxiliary pattern 210 is adjacent to a plurality of the first target patterns 200; a second auxiliary pattern 220 located within the second cutting pattern region B2, and the second auxiliary pattern 220 is adjacent to a plurality of the first target patterns 200.
Since the first auxiliary pattern 210 is located within the first cutting pattern region B1, and the first auxiliary pattern 210 is adjacent to a plurality of the first target patterns 200; the second auxiliary pattern 220 is located in the second cutting pattern area B2, and the second auxiliary pattern 220 is adjacent to the plurality of first target patterns 200, so that the pattern density in the first cutting pattern area B1 is close to the pattern density in the first pattern area A1, and the pattern density in the second cutting pattern area B2 is less different from the pattern density in the first pattern area A1, so that uniformity of pattern sizes of corresponding portions of the first pattern area A1 is improved when pattern transfer is performed with the first pattern area A1, the first cutting pattern area B1, and the second cutting pattern area B2.
The following detailed description refers to the accompanying drawings.
The mask pattern is a pattern designed for a material layer to be etched.
In this embodiment, the first target pattern 200 is in a long stripe shape.
In this embodiment, the reticle pattern further includes: a second graphic area A2, wherein the second graphic area A2 includes a plurality of second target graphics 230, the plurality of second target graphics 230 are arranged along a first direction X, and the second cutting graphic area B2 is located between the first graphic area A1 and the second graphic area A2; the third cutting pattern area B3, the second cutting pattern area B2 and the third cutting pattern area B3 are respectively positioned at two sides of the second pattern area A2, and the second cutting pattern area B2 and the third cutting pattern area B3 are arranged along the second direction Y; a third auxiliary pattern 240 located within the third cut pattern region B3, and the third auxiliary pattern 240 is adjacent to a number of the second target patterns 230.
The first auxiliary graphic 210 includes: a plurality of first auxiliary portions 211 which are separated from each other and extend along the second direction Y, and each of the first auxiliary portions 211 is adjacent to one of the first target patterns 200.
In this embodiment, the first auxiliary portion 211 is short in the second direction Y. In other embodiments, the first auxiliary portion may be elongated in the second direction.
In this embodiment, the first auxiliary graphic 210 further includes: the second auxiliary portions 212 are adjacent to the plurality of first auxiliary portions 211, and the second auxiliary portions 212 extend in the first direction X.
In the present embodiment, the second auxiliary portion 212 is elongated in the first direction X.
In other embodiments, no: the second auxiliary portion.
In the present embodiment, the pattern density of the first cutting pattern region B1 and the pattern density of the first pattern region A1 are made to be close to each other by the plurality of first auxiliary portions 211 and the first auxiliary pattern 210 formed by the second auxiliary portions 212 adjacent to the first auxiliary portions 211. In addition, the dimension of the first auxiliary portion 211 along the second direction Y is within a smaller range, and the first auxiliary portion 211 and the second auxiliary portion 212 can be used together as the first auxiliary pattern 210, so that the etching load effect (etch loading effect) is reduced in the subsequent photolithography process. Furthermore, in the case where the spatial range of the first cutting pattern region B1 is small, the first auxiliary pattern 210 located in the first cutting pattern region B1 can also effectively ensure uniformity of both ends and a center dimension of the first structure formed after pattern transfer with the first target pattern 200.
The third auxiliary graph 240 includes: a plurality of third auxiliary portions 241, which are separated from each other, extend along the second direction Y, and each of the third auxiliary portions 241 is adjacent to one of the second target patterns 230.
In this embodiment, the third auxiliary portion 241 has a short stripe shape in the second direction Y. In other embodiments, the third auxiliary portion may be elongated in the second direction.
In this embodiment, the third auxiliary graph 240 further includes: fourth auxiliary portions 242 adjacent to the plurality of third auxiliary portions 241, and the fourth auxiliary portions 242 extend in the first direction X.
In the present embodiment, the fourth auxiliary portion 242 is elongated in the first direction X.
In other embodiments, no: the fourth auxiliary portion.
Also, in the present embodiment, the pattern density of the third cutting pattern region B3 and the pattern density of the second pattern region A2 are made to be close to each other by the third auxiliary pattern 240 formed by the plurality of third auxiliary portions 241 and the fourth auxiliary portions 242 adjacent to the third auxiliary portions 241. In addition, the third auxiliary portion 241 and the fourth auxiliary portion 242 may be used together as the third auxiliary pattern 240 when the size of the third auxiliary portion 241 along the second direction Y is within a smaller range, so that the etching load effect (etch loading effect) is reduced in the subsequent photolithography process. Furthermore, in the case where the spatial range of the third cutting pattern region B3 is small, the third auxiliary pattern 240 located in the third cutting pattern region B3 can also effectively ensure uniformity of both ends and the center dimension of the fourth structure formed after the pattern transfer with the second target pattern 230.
In this embodiment, the central axis 201 of each first target pattern 200 and the central axis 231 of the corresponding second target pattern 230 do not overlap, and the second auxiliary pattern 220 includes a plurality of fifth auxiliary portions 221 and a plurality of sixth auxiliary portions 222, where the plurality of fifth auxiliary portions 221 extend along the second direction Y, the plurality of sixth auxiliary portions 222 extend along the second direction Y, one of the fifth auxiliary portions 221 abuts one of the first target patterns 200, and one of the sixth auxiliary portions 222 abuts one of the second target patterns 230.
In this embodiment, the second auxiliary graphic 220 further includes: a seventh auxiliary portion 223 extending in the first direction X, and the seventh auxiliary portion 223 is adjacent to the fifth auxiliary portions 221 and the sixth auxiliary portions 222.
The second cutting pattern area B2 is located at a side of the first pattern area A1, the second cutting pattern area B2 is located at a side of the second pattern area A2, and when the central axis 201 of each of the first target patterns 200 and the central axis 231 of each of the second target patterns 230 do not coincide, since the second auxiliary pattern 220 located in the second cutting pattern area B2 includes: a plurality of fifth auxiliary parts 221 and a plurality of sixth auxiliary parts 222, and a seventh auxiliary part 223, and the plurality of fifth auxiliary parts 221 extend in the second direction Y, the plurality of sixth auxiliary parts 222 extend in the second direction Y, the seventh auxiliary part 223 extends in the first direction X, one of the fifth auxiliary parts 221 is adjacent to one of the first target patterns 200, one of the sixth auxiliary parts 222 is adjacent to one of the second target patterns 230, and the seventh auxiliary part 223 is adjacent to the plurality of fifth auxiliary parts 221, and the plurality of sixth auxiliary parts 222, such that a pattern density difference between a side of the first pattern area A1 and a pattern density of the second cut pattern area B2 is small, and at the same time, such that a pattern density difference between a side of the second pattern area A2 and a pattern density of the second cut pattern area B2 is small. And then, when the first pattern area A1, the second pattern area A2 and the second cutting pattern area B2 are used for pattern transfer, uniformity of pattern sizes of parts corresponding to the first pattern area A1 is improved, and uniformity of pattern sizes of parts corresponding to the second pattern area A2 is also improved.
The mask pattern further comprises: a fourth cutting pattern area B4 positioned at one side or both sides of the first pattern area A1; a plurality of fourth auxiliary patterns 250 located within the fourth cutting pattern region B4, and the fourth auxiliary patterns 250 extend in the second direction Y.
In this embodiment, the fourth cutting pattern area B4 is located at one side of the first pattern area A1.
Each of the fourth auxiliary patterns 250 adjoins one fifth auxiliary portion 221.
The fourth auxiliary pattern 250 can improve the pattern density around the first target pattern 100 at the inner edge position of the first pattern area A1, i.e., the pattern density at the edge of the first pattern area A1 and the pattern density in the first pattern area A1 are less different. Further, when the pattern transfer is performed by the first pattern area A1 and the fourth cutting pattern area B4, uniformity of the pattern size of the portion corresponding to the first pattern area A1 is improved.
Correspondingly, the embodiment of the invention also provides a mask plate, wherein the mask plate is provided with a graph, and the graph is as shown in the mask plate graph in fig. 6, and the description is omitted here.
Fig. 7 is a schematic diagram of a mask pattern according to another embodiment of the present invention. The difference between this embodiment and the above embodiment is that the central axis 301 of the first target pattern 300 and the central axis 331 of the second target pattern 330 are coincident, and the second auxiliary pattern located in the second cutting pattern area B2 in this embodiment is different from the second auxiliary pattern 220 located in the second cutting pattern area B2 in the above embodiment.
Referring to fig. 7, a mask pattern includes: a first graphic region A1, wherein the first graphic region A1 includes a plurality of first target graphics 300, and the plurality of first target graphics 300 are arranged along a first direction X; the first cutting pattern area B1 and the second cutting pattern area B2 are respectively positioned at two sides of the first pattern area A1, the first cutting pattern area B1, the first pattern area A1 and the second cutting pattern area B2 are arranged along the second direction Y, and the first direction X and the second direction Y are vertical; a first auxiliary pattern 310 located within the first cutting pattern region B1, and the first auxiliary pattern 310 is adjacent to a number of the first target patterns 300; a second auxiliary pattern (not shown) located within the second cutting pattern region B2, and the second auxiliary pattern is adjacent to a plurality of the first target patterns 300.
The following detailed description refers to the accompanying drawings.
In this embodiment, the reticle pattern further includes: a second pattern area A2, wherein the second pattern area A2 includes a plurality of second target patterns 330, the plurality of second target patterns 330 are arranged along a first direction X, and the second cutting pattern area B2 is located between the first pattern area A1 and the second pattern area A2; the third cutting pattern area B3, the second cutting pattern area B2 and the third cutting pattern area B3 are respectively positioned at two sides of the second pattern area A2, and the second cutting pattern area B2 and the third cutting pattern area B3 are arranged along the second direction Y; a third auxiliary pattern 340 located within the third cut pattern region B3, and the third auxiliary pattern 340 is adjacent to a number of the second target patterns 330.
The first target pattern 300 is the same as the first target pattern 200 in the above embodiment, and will not be described herein.
The first auxiliary pattern 310 includes a plurality of first auxiliary portions 311, which are separated from each other, extending along the second direction Y, and a second auxiliary portion 312, which is adjacent to the plurality of first auxiliary portions 311, and the first auxiliary pattern 310 is identical to the first auxiliary pattern 210 in the above embodiment, and will not be described herein.
The third auxiliary graphic 340 includes: a plurality of third auxiliary portions 341 which are separated from each other and extend along the second direction Y, and a fourth auxiliary portion 342 which is adjacent to the plurality of third auxiliary portions 341, wherein the third auxiliary portion 340 is identical to the third auxiliary pattern 240 in the above embodiment, and will not be described again.
In this embodiment, the central axis 301 of each first target pattern 300 and the central axis 331 of the corresponding second target pattern 330 overlap, the second auxiliary pattern includes a plurality of eighth auxiliary portions 321, and two ends of one of the eighth auxiliary portions 321 are respectively adjacent to the first target pattern 300 and the second target pattern 330.
The second cutting pattern area B2 is located at the first pattern area A1 side, the second cutting pattern area B2 is located at the second pattern area A2 side, when the central axis 301 of each first target pattern 300 and the 331 of each second target pattern 330 do not overlap, since the second auxiliary pattern includes a plurality of eighth auxiliary portions 321, and two ends of one of the eighth auxiliary portions 321 are respectively adjacent to the first target pattern 300 and the second target pattern 330, so that the pattern density at the first pattern area A1 side and the pattern density difference B2 at the second cutting pattern area are simultaneously smaller, and the pattern density at the second pattern area A2 side and the pattern density difference at the second cutting pattern area B2 are smaller. And then, when the first pattern area A1, the second pattern area A2 and the second cutting pattern area B2 are used for pattern transfer, uniformity of pattern sizes of parts corresponding to the first pattern area A1 is improved, and uniformity of pattern sizes of parts corresponding to the second pattern area A2 is also improved.
The mask pattern further comprises: a fourth cutting pattern area B4 positioned at one side or both sides of the first pattern area A1; a plurality of fifth auxiliary patterns 350 located within the fourth cutting pattern region B4, and the fifth auxiliary patterns 350 extend in the second direction Y.
In this embodiment, the fourth cutting pattern area B4 is located at one side of the first pattern area A1, and the first pattern area A1 and the fourth cutting pattern area B4 are arranged along the second direction Y.
Each of the fifth auxiliary patterns 350 adjoins one eighth auxiliary portion 321.
Correspondingly, the embodiment of the invention also provides a mask plate, wherein the mask plate is provided with a graph, and the graph is the mask plate graph shown in fig. 7 and is not repeated here.
Correspondingly, the embodiment of the invention also provides a method for forming the semiconductor structure.
Fig. 8 to 9 are schematic structural views illustrating steps of a method for forming a semiconductor structure according to an embodiment of the present invention.
Referring to fig. 8, a substrate 400 is provided, and the substrate surface has a layer to be etched (not shown); providing a reticle having thereon a graphic (shown in fig. 7), the graphic comprising: a first graphic region A1, wherein the first graphic region A1 includes a plurality of first target graphics 300, and the plurality of first target graphics 300 are arranged along a first direction X; the first cutting pattern area B1 and the second cutting pattern area B2 are respectively positioned at two sides of the first pattern area A1, the first cutting pattern area B1, the first pattern area A1 and the second cutting pattern area B2 are arranged along the second direction Y, and the first direction X and the second direction Y are vertical; a first auxiliary pattern 310 located within the first cutting pattern region B1, and the first auxiliary pattern 310 is adjacent to a number of the first target patterns 300; a second auxiliary pattern (not shown) located within the second cut pattern region B2, and the second auxiliary pattern is adjacent to a plurality of the first target patterns 300; and performing a patterning process on the layer to be etched by taking the mask plate as a mask to form an initial semiconductor structure, wherein the initial semiconductor structure comprises a first structure 410, a second structure 420 and a third structure 430, the first structure 410 corresponds to a first graph area A1, the second structure 420 corresponds to a first cutting graph area B1, and the third structure 430 corresponds to a second cutting graph area B2.
In this embodiment, the initial semiconductor structure further includes: a fourth structure 440, a fifth structure 450, and a sixth structure 460, wherein the fourth structure 440 corresponds to the second pattern area A2, the fifth structure 450 corresponds to the third cutting pattern area B3, and the sixth structure 460 corresponds to the fourth cutting pattern area B4.
Referring to fig. 9, the second structure 420 and the third structure 430 are removed.
In this embodiment, further comprising: the fifth structure 450 and the sixth structure 460 are removed.
Because the pattern density of the first cutting pattern area B1 and the pattern density of the first pattern area A1 in the mask pattern are close, the pattern density of the second cutting pattern area B2 and the pattern density of the first pattern area A1 are beneficial to reducing the etching loading effect in the process of forming the initial semiconductor structure by photolithography, so that the uniformity of the size of the formed first structure 410 is better, that is, the sizes at the two ends and the size at the center of the first structure 410 keep better uniformity.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (13)
1. A reticle pattern comprising:
the first graphic area comprises a plurality of first target graphics, and the plurality of first target graphics are arranged along a first direction;
The first cutting pattern area, the first pattern area and the second cutting pattern area are respectively positioned at two sides of the first pattern area, are arranged along a second direction, and are vertical to the first direction and the second direction;
a first auxiliary pattern located within the first cutting pattern region, and the first auxiliary pattern is adjacent to a plurality of the first target patterns;
a second auxiliary pattern located within the second cut pattern region, and the second auxiliary pattern being contiguous with a number of the first target patterns;
The first auxiliary graph includes: a plurality of first auxiliary parts which are mutually separated and extend along a second direction, wherein each first auxiliary part is adjacent to one first target graph;
The second auxiliary patterns comprise a plurality of fifth auxiliary parts and a plurality of sixth auxiliary parts, the fifth auxiliary parts extend along the second direction, the sixth auxiliary parts extend along the second direction, and one fifth auxiliary part is adjacent to one first target pattern.
2. The reticle pattern of claim 1, further comprising: the second graph area comprises a plurality of second target graphs, the second target graphs are arranged along the first direction, and the second cutting graph area is positioned between the first graph area and the second graph area; the second cutting pattern area and the third cutting pattern area are respectively positioned at two sides of the second pattern area, and are arranged along a second direction; a third auxiliary pattern located within the third cut pattern region, and the third auxiliary pattern being contiguous with a number of the second target patterns;
The third auxiliary pattern includes: a plurality of third auxiliary portions extending along the second direction and separated from each other, and each of the third auxiliary portions is adjacent to one of the second target patterns.
3. The reticle pattern of claim 2, wherein the first auxiliary pattern further comprises: and the second auxiliary parts are adjacent to the first auxiliary parts and extend along the first direction.
4. The reticle pattern of claim 2, wherein the third auxiliary pattern further comprises: and a fourth auxiliary portion adjacent to the plurality of third auxiliary portions, and the fourth auxiliary portion extends along the first direction.
5. The reticle pattern of claim 2, wherein a central axis of each first target pattern and a central axis of the corresponding second target pattern do not coincide by one of the sixth auxiliary portions being contiguous with one of the second target patterns.
6. The reticle pattern of claim 5, wherein the second auxiliary pattern further comprises: a seventh auxiliary portion extends along the first direction and is contiguous with the fifth auxiliary portions and the sixth auxiliary portions.
7. The reticle pattern of claim 5, further comprising: a fourth cutting pattern region located at one side or both sides of the first pattern region; and a plurality of fourth auxiliary patterns positioned in the fourth cutting pattern area, wherein the fourth auxiliary patterns extend along a second direction.
8. The reticle pattern of claim 7, wherein each of the fourth auxiliary patterns is adjacent to a fifth auxiliary portion.
9. The reticle pattern of claim 2, wherein when the central axis of each first target pattern and the central axis of the corresponding second target pattern overlap, the second auxiliary pattern includes a plurality of eighth auxiliary portions, and two ends of one of the eighth auxiliary portions are respectively adjacent to the first target pattern and the second target pattern.
10. The reticle pattern of claim 9, further comprising: a fourth cutting pattern region located at one side or both sides of the first pattern region; and a plurality of fifth auxiliary patterns positioned in the fourth cutting pattern area, and the fifth auxiliary patterns extend along a second direction.
11. The reticle pattern of claim 10, wherein each of the fifth auxiliary patterns is adjacent to one of the eighth auxiliary portions.
12. A reticle, comprising:
the mask plate is provided with a graph, and the graph comprises: the first graphic area comprises a plurality of first target graphics, and the plurality of first target graphics are arranged along a first direction;
The first cutting pattern area, the first pattern area and the second cutting pattern area are respectively positioned at two sides of the first pattern area, are arranged along a second direction, and are vertical to the first direction and the second direction;
a first auxiliary pattern located within the first cutting pattern region, and the first auxiliary pattern is adjacent to a plurality of the first target patterns;
a second auxiliary pattern located within the second cut pattern region, and the second auxiliary pattern being contiguous with a number of the first target patterns;
The first auxiliary graph includes: a plurality of first auxiliary parts which are mutually separated and extend along a second direction, wherein each first auxiliary part is adjacent to one first target graph;
The second auxiliary patterns comprise a plurality of fifth auxiliary parts and a plurality of sixth auxiliary parts, the fifth auxiliary parts extend along the second direction, the sixth auxiliary parts extend along the second direction, and one fifth auxiliary part is adjacent to one first target pattern.
13. A method of forming a semiconductor structure, comprising:
Providing a substrate, wherein the surface of the substrate is provided with a layer to be etched;
Providing a mask plate, wherein the mask plate is provided with a graph, and the graph comprises: the first graphic area comprises a plurality of first target graphics, and the plurality of first target graphics are arranged along a first direction; the first cutting pattern area, the first pattern area and the second cutting pattern area are respectively positioned at two sides of the first pattern area, are arranged along a second direction, and are vertical to the first direction and the second direction; a first auxiliary pattern located within the first cutting pattern region, and the first auxiliary pattern is adjacent to a plurality of the first target patterns; a second auxiliary pattern located within the second cut pattern region, and the second auxiliary pattern being contiguous with a number of the first target patterns;
Using the mask plate as a mask, performing a patterning process on the substrate to form an initial semiconductor structure, wherein the initial semiconductor structure comprises a first structure, a second structure and a third structure, the first structure corresponds to a first pattern area, the second structure corresponds to a first cutting pattern area, and the third structure corresponds to a second cutting pattern area;
removing the second structure and the third structure;
The first auxiliary graph includes: a plurality of first auxiliary parts which are mutually separated and extend along a second direction, wherein each first auxiliary part is adjacent to one first target graph;
The second auxiliary patterns comprise a plurality of fifth auxiliary parts and a plurality of sixth auxiliary parts, the fifth auxiliary parts extend along the second direction, the sixth auxiliary parts extend along the second direction, and one fifth auxiliary part is adjacent to one first target pattern.
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| CN104749900B (en) * | 2013-12-30 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | Forming method of auxiliary pattern and correction method of exposure target pattern |
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