CN112911818A - Photoimageable material and method of use and corresponding component carrier and method of manufacture - Google Patents
Photoimageable material and method of use and corresponding component carrier and method of manufacture Download PDFInfo
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- CN112911818A CN112911818A CN201911227021.6A CN201911227021A CN112911818A CN 112911818 A CN112911818 A CN 112911818A CN 201911227021 A CN201911227021 A CN 201911227021A CN 112911818 A CN112911818 A CN 112911818A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
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Abstract
本发明涉及用于对部件承载件(110)进行图案化的光成像材料(100)，其中，所述光成像材料(100)包括光成像基体(102)和在所述基体(102)中的加强颗粒(104)，所述加强颗粒用于使所述光成像材料(100)钢化。本发明还涉及使用所述光成像材料来形成部件承载件的图案化的导电结构的方法、制造部件承载件的方法以及部件承载件。
The present invention relates to a photoimageable material (100) for patterning a component carrier (110), wherein the photoimageable material (100) comprises a photoimageable substrate (102) and a photoimageable substrate (102) in the substrate (102). Reinforcing particles (104) for toughening the photoimaging material (100). The present invention also relates to a method of forming a patterned conductive structure of a component carrier using the photoimaging material, a method of manufacturing the component carrier, and the component carrier.
Description
Technical Field
The invention relates to a photoimageable material, a method of use, a method of manufacturing a component carrier, and a component carrier.
Background
In the context of ever increasing product functionality of component carriers equipped with one or more electronic components, and increasing miniaturization of such components, as well as an increasing number of components to be mounted on or embedded in the component carrier, such as printed circuit boards, increasingly powerful array components or packages with several components are employed, which have a plurality of contacts or connections with smaller spacings between them. At the same time, the component carrier should be mechanically robust and electrically reliable in order to be operable even under severe conditions.
In particular, it is a problem to form component carriers with accurately defined electrically conductive structures.
Disclosure of Invention
It may be desirable to provide a component carrier having an accurately defined electrically conductive structure.
According to an exemplary embodiment of the invention, a photoimageable material for patterning a component carrier is provided, wherein the photoimageable material comprises a photoimageable matrix and reinforcing particles (stiffening particles) in the matrix for toughening the photoimageable material.
According to another exemplary embodiment of the present invention, the patterned electrically conductive structures of the component carrier (in particular for fine line patterning) are formed using a photo-imageable material having the above-mentioned features.
According to a further exemplary embodiment of the invention, a method of manufacturing a component carrier is provided, wherein the method comprises providing a stack comprising at least one electrically insulating layer structure and at least one electrically conductive layer structure, forming a layer of a photoimageable material having the above-mentioned features on the stack, forming at least one recess in the layer of photoimageable material by irradiation with electromagnetic radiation and subsequent etching, and filling the at least one recess at least partially with an electrically conductive structure.
According to another exemplary embodiment of the invention, a component carrier is provided, wherein the component carrier comprises: a stack comprising at least one electrically conductive layer structure and at least one electrically insulating layer structure, and an electrically conductive structure configured as a plurality of tracks, each track having a lateral width and a vertical height, and each track being formed side by side on the stack with a lateral pitch between the tracks, wherein the pitch, in particular the minimum pitch, is less than 3 μm, wherein the height is greater than 3 μm, and wherein the ratio between the height and the width is greater than 1.
According to another exemplary embodiment of the invention, a component carrier is provided, wherein the component carrier comprises a stack comprising at least one electrically conductive layer structure and at least one electrically insulating layer structure, and an electrically conductive structure configured as a pillar on the stack and having a vertical height and a lateral width, the vertical height being larger than 50 μm and the lateral width being larger than 30 μm.
In the context of the present application, the term "component carrier" may particularly denote any support structure capable of accommodating one or more components thereon and/or therein to provide mechanical support and/or electrical connection. In other words, the component carrier may be configured as a mechanical and/or electrical carrier for the component. In particular, the component carrier may be one of a printed circuit board, an organic interposer, and an Integrated Circuit (IC) substrate. The component carrier may also be a hybrid board combining different ones of the above-mentioned types of component carriers.
In the context of the present application, the term "stack" may particularly denote an arrangement of a plurality of planar layer structures mounted in parallel one on top of the other.
In the context of the present application, the term "layer structure" may particularly denote a plurality of non-continuous islands, patterned layers or continuous layers within a common plane.
In the context of the present application, the term "photo imaging material" may particularly denote a material which may be attached to the stack and which may be patterned by an etching process (particularly wet etching) followed by irradiation with electromagnetic radiation. Such photoimageable materials may also be used to form patterned conductive structures by depositing conductive material in one or more gaps between patterned photoimageable materials.
In the context of the present application, the term "photo-imaging substrate" may particularly denote a material which may be chemically modified upon irradiation with electromagnetic radiation, such as light. Such chemical modification of the photoimageable substrate may allow for selective removal of the modifying material but not the non-modifying material, or removal of the non-modifying material but not the modifying material, by an etching process, particularly a wet etching process. As a result, a photoimageable material comprised of a photoimageable matrix and reinforcing particles can be patterned.
In the context of the present application, the term "reinforcing particles" may particularly denote the following particles: the particles are uniform or non-uniform in size, and/or are made of a material having properties that increase the stiffness, robustness, or stability of the photoimageable material comprised of the photoimageable matrix and reinforcing particles as compared to the photoimageable matrix alone. Thus, by adding reinforcing particles to the photoimageable matrix, the photoimageable material as a whole may become more mechanically robust. As a result, such photoimageable materials can be patterned in a more accurate, reliable, predictable, and reproducible manner than photoimageable materials without reinforcing particles.
According to an exemplary embodiment of the present invention, a photoimageable material is provided which comprises a mixture of a photoimageable matrix and reinforcing particles for increasing the stiffness of the photoimageable material. Thus, after patterning the photoimageable material, the remaining material of the patterned photoimageable material has a more precisely defined structure, allowing the use of the patterned photoimageable material as an accurate mask for depositing the metallic material. Thus, for example, conductive traces and/or pillars formed in gaps between sub-structures of patterned photoimaging material may be reliably prevented from having undefined shapes or being unintentionally connected to each other. Thus, by toughening the photo-imageable material thanks to the reinforcing particles, a component carrier with electrically conductive structures on a surface with well-defined characteristics can be manufactured. In particular, by exemplary embodiments of the present invention, the line pitch ratio of such conductive traces may be made smaller and more accurate. In other exemplary applications, one or more conductive posts or pillars (particularly copper pillars) may be formed with significantly improved accuracy, thanks to a patterned substructure that is mechanically reinforced or stiffened by reinforcing particles that suitably defines the photo-imaging material.
Very advantageously, increasing the stiffness of the photoimageable material, such as a dry film, may enable the production of component carriers with fine line pitch ratios (especially 5 μm/5 μm and below) and with higher copper thicknesses than using conventional methods. Thus, exemplary embodiments of the present invention may allow for higher interconnect densities to be achieved while maintaining a suitable copper thickness. The reinforcing particles in the photoimageable material may thus be well suited for fine line structuring during component carrier manufacturing. According to a preferred embodiment, reinforcing particles having a size in the sub-micron range may be advantageously used. Also preferably, the reinforcing particles may be transparent to Ultraviolet (UV) radiation so as to allow UV treatment of the photoimageable substrate during patterning of the photoimageable material without risk of impairing patterning accuracy due to excessive UV absorption and/or reflection by the reinforcing particles.
In the following, further exemplary embodiments of the photo imaging material, the method and the component carrier will be explained.
In a preferred embodiment, the photoimageable material is a dry film with a solid matrix. Preferably, the photo-imaging material as a whole is in the solid phase. In this case, the photoimageable material may be used as a dry film that may be laminated on the layer stack for subsequent lamination, for patterning purposes and for subsequent further formation of the conductive structures. Thanks to the reinforcing particles in the photoimageable material, patterning of the photoimageable material can be performed with higher accuracy due to increased mechanical stability.
In one embodiment, the thickness of the dry film is in a range between 0.5 μm and 10 μm, in particular in a range between 3 μm and 10 μm. The thickness of such a dry film has proven suitable for ensuring proper patterning of the photoimageable material.
In another embodiment, the matrix is liquid. In such an alternative embodiment, the matrix may be liquid, such that the photoimaging material as a whole may be applied as a suspension to the stack of component carriers during manufacturing. The liquid photoimageable matrix with solid reinforcing particles may then be cured and subsequently patterned. Also in the case of liquid or viscous photoimageable materials, the addition of reinforcing particles can significantly improve the accuracy of patterning the photoimageable material, which can be used as a mask for forming patterned conductive structures with inverse profiles.
In one embodiment, the particles are transparent to the optical radiation. More precisely, the electromagnetic radiation irradiated onto the photoimageable material to pattern the photoimageable material may be configured to induce a chemical reaction of the photoimageable substrate to selectively chemically modify the irradiated portions of the photoimageable substrate. Very advantageously, the reinforcing particles are transparent to the light radiation. By taking this measure, it can be ensured that: irradiation of the photoimageable material for patterning purposes is not disturbed or deteriorated by the presence of the reinforcing particles. Preferably, the reinforcing particles are optically transparent to optical radiation, i.e. allow electromagnetic radiation in the visible range and also in the near UV range to substantially pass through the reinforcing particles without significant intensity reduction. This can ensure that: the irradiated portion of the photoimageable substrate may be chemically modified, for example, throughout the thickness of the layer-type photoimageable material.
In one embodiment, the particles are substantially UV transparent, substantially transparent to visible light, and/or substantially transparent in the wavelength range of 340nm to 410 nm. Thus, the optical transparency of the reinforcing particles can be tuned specifically within the wavelength range corresponding to the electromagnetic radiation used to pattern the photoimageable material.
In one embodiment, the reinforcing particles may absorb a portion of the electromagnetic radiation, but do not reflect the electromagnetic radiation. Thus, a moderate absorption of electromagnetic radiation by the reinforcing particles may still be acceptable, especially when the photoimaging material has a sufficiently small thickness. However, the reflection of electromagnetic radiation by the reinforcing particles should be weak to prevent scattering of the electromagnetic radiation to undesired areas of the photoimageable material that may degrade the accuracy of the patterning process.
In one embodiment, the size of the reinforcing particles (in particular at least 90% thereof) is less than 300nm, in particular less than 100 nm. Thus, the reinforcing particles may be in the submicron range and may be nanoparticles. For example, at least 80%, preferably at least 90%, of the reinforcing particles may have a size in the range between 10nm and 300 nm.
In one embodiment, the matrix comprises an organic material that polymerizes and/or cross-links when irradiated with UV light, visible light, and/or electromagnetic radiation in the wavelength range of 340nm to 410 nm. Polymerization can be defined as the reaction of monomer molecules to form polymer chains or a three-dimensional network. Curing may be defined as the process by which toughening or hardening of the polymeric material occurs, which may be caused by cross-linking of the (in particular already present) polymer chains. Many photopolymers are cured during development (development). Thus, in the wavelength range in which the reinforcing particles are substantially optically transparent, the matrix can be chemically modified specifically and selectively, for example by said electromagnetic radiation, by polymerization. This may allow for the conversion of previously substantially uniform photoimageable material into regions having different chemical properties, which may be used for the purpose of selectively patterning the photoimageable material. The patterned photoimageable material may then be used as a mask for depositing the conductive material.
In one embodiment, the reinforcing particles comprise aluminum oxide (Al)2O3) Aluminum hydroxide (Al (OH)3) Barium sulfate (BaSO)4) Magnesium sulfate (MgSO)4) Calcium hydroxide (Ca (OH)2) Magnesium hydroxide (Mg (OH)2) And/or silicon oxide (SiO)2) Or the reinforcing particles consist of aluminium oxide (Al)2O3) Aluminum hydroxide (Al (OH)3) Barium sulfate (BaSO)4) Magnesium sulfate (MgSO)4) Calcium hydroxide (Ca (OH)2) Magnesium hydroxide (Mg (OH)2) And/or silicon oxide (SiO)2) And (4) forming. Alumina and aluminum hydroxide are particularly suitable materials for the reinforcing particles, although other reinforcing particle materials are possible. The mentioned materials are particularly suitable for providing high mechanical robustness, optically transparent properties in the relevant wavelength range of the electromagnetic radiation and compatibility with the materials of the photoimaging substrate.
In one embodiment, the photoimageable material comprises between 20% and 80% by volume of reinforcing particles. Preferably, the photo-imaging material may comprise between 40% and 80% volume of reinforcing particles. This is a suitable compromise between the ability to suitably temper the photoimageable material for improved accuracy and to selectively chemically modify the photoimageable material by irradiation with electromagnetic radiation.
In one embodiment, the method includes removing the photoimaging material after filling. Removal of the patterned photoimageable material from the component carrier after use may be accomplished, for example, by peeling the patterned photoimageable material off the component carrier.
In one embodiment, the method includes forming a layer of photoimageable material at least partially on a seed layer of conductive material. For example, an electroless deposition process may preferably be performed first, forming a thin copper seed layer on the surface of the stack. The thickness of the seed layer may be, for example, 0.5 μm. However, the thickness of the seed layer may also be above 1 μm, and/or several accumulated seed layers may also be provided. For example, the thickness of the seed layer or the cumulative thickness of the plurality of seed layers may be in a range between 0.5 μm and 5 μm. When multiple seed layers are provided, they may include an organic (e.g., polymeric) layer, a palladium layer, and/or a copper layer. The formation of the seed layer may facilitate the subsequent electroplating process.
In one embodiment, the method includes selectively forming conductive structure(s), particularly by electroplating, on one or more exposed portions of the seed layer in at least one recess of the photoimageable material. After patterning the photoimageable material and thereby exposing one or more portions of the seed layer, deposition of the conductive material for forming the conductive structure(s) may be significantly simplified by the presence of the exposed seed layer.
In one embodiment, the method includes removing the photoimageable material after forming the conductive structure(s) to thereby expose at least one further portion of the seed layer, and thereafter removing the exposed at least one further portion of the seed layer. In order to electrically separate the plurality of conductive structures, which are still integrally connected by the seed layer, the seed layer (and optionally thin surface portions of the conductive structures) may simply be etched away.
In one embodiment, the pitch between the conductive traces is less than 2 μm. Their height may be greater than 5 μm. The ratio between the height and the width may be greater than 2. In particular, the combination of a pitch of less than 2 μm, a height of more than 5 μm and a ratio between height and width of more than 2 allows the use of the obtained conductive structure as a conductive track with a very small line-to-line pitch ratio. Thus, such component carriers are well suited for modern PCB and IC substrate applications.
In one embodiment, the width of the gap between the traces may be no greater than 5 μm, particularly no greater than 4 μm. Thus, very small line/pitch ratios may be obtained using the photoimageable materials according to exemplary embodiments of the present invention.
In one embodiment, the side walls of the conductive structures configured as tracks or as pillars have a roughness Ra of more than 50nm, in particular more than 100nm, more in particular in the range between 50nm and 200 nm. It has been demonstrated that a relatively large roughness of the sidewalls of the conductive structure(s) is obtained as a fingerprint (fingerprint) of the particulate photo-imageable material with the reinforcing particles embedded in the photo-imageable matrix. The roughness of the surface may be defined and measured as the centerline average height Ra. Ra is the arithmetic mean of all the distances of the contour from the centerline. For example, the measurement or determination of the roughness Ra can be carried out according to DIN EN ISO 4287:2010, which is a German industrial standard.
In one embodiment, the vertical height of the pillars is in a range between 50 μm and 150 μm. The lateral width of the pillars may be in a range between 50 μm and 80 μm. The ratio between the vertical height and the lateral width of the column may be greater than 1, in particular greater than 2. It has been demonstrated that the combination of in particular a vertical height in the range between 50 μm and 150 μm, a lateral width in the range between 50 μm and 80 μm and an aspect ratio of more than 1 or even more than 2 is perfectly suitable for forming copper pillars with high accuracy in terms of dimensional definition.
In one embodiment, the component carrier comprises a stack of at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier may be a laminate of the mentioned electrically insulating layer structure(s) and electrically conductive layer structure(s), which is formed in particular by applying mechanical pressure (if required supported by thermal energy). The mentioned stack may provide a plate-shaped component carrier which is capable of providing a large mounting surface for further components and which is still very thin and compact.
In one embodiment, the component carrier is shaped as a plate. This contributes to a compact design, wherein the component carrier still provides a large base for mounting components on the component carrier. Further, particularly a bare die, which is an example of an embedded electronic component, can be easily embedded in a thin board such as a printed circuit board owing to its small thickness.
In one embodiment, the component carrier is configured as one of the group consisting of a printed circuit board and a substrate, in particular an IC substrate.
In the context of the present application, the term "printed circuit board" (PCB) may particularly denote a component carrier (which may be plate-shaped (i.e. planar), three-dimensionally curved (e.g. when manufactured using 3D printing) or which may have any other shape) formed by laminating several electrically conductive layer structures with several electrically insulating layer structures (e.g. by applying pressure and/or thermal energy). As a preferred material for PCB technology, the electrically conductive layer structure is made of copper, whereas the electrically insulating layer structure may comprise resin and/or glass fibres, so-called prepregs, such as FR4 material. The various conductive layer structures can be connected to each other in a desired manner by the following process: vias are formed (e.g. by etching (e.g. wet and/or dry etching), laser drilling or mechanical drilling) through the laminate and vias are formed as through-hole connections by filling these vias with a conductive material, in particular copper. In addition to one or more components that may be embedded in a printed circuit board, printed circuit boards are typically configured to receive one or more components on one surface or two opposing surfaces of a board-shaped printed circuit board. They may be attached to the respective major surfaces by welding. The dielectric portion of the PCB may be composed of a resin with reinforcing fibers, such as glass fibers.
In the context of the present application, the term "substrate" may particularly denote a small component carrier. The substrate may be a relatively small component carrier compared to the PCB, on which one or more components may be mounted and which may act as a connection medium between the one or more chips and the further PCB. For example, the substrate may have substantially the same Size as that of a component (particularly an electronic component) to be mounted thereon (for example, in the case of a Chip Size Package (CSP)). More specifically, a baseplate may be understood as a carrier for electrical connections or electrical networks, and a component carrier comparable to a Printed Circuit Board (PCB), but with a relatively higher density of laterally and/or vertically arranged connections. The transverse connections are, for example, conductive paths, while the vertical connections may be, for example, drilled holes. These lateral and/or vertical connections are arranged within the substrate and may be used to provide electrical and/or mechanical connection of a housed or non-housed component (in particular of an IC chip), such as a bare die, to a printed circuit board or an intermediate printed circuit board. Thus, the term "substrate" also includes "IC substrates". The dielectric portion of the substrate may be composed of a resin with reinforcing balls, such as glass balls.
The substrate or the interposer may comprise or consist of at least a layer of glass, silicon, ceramic and/or organic material, such as a resin. The substrate or interposer may also comprise a photoimageable or dry-etched organic material, such as an epoxy Build-Up (Build-Up) film or a polymer composite, such as a polyimide, polybenzoxazole (polybenzoxazole) or benzocyclobutene-functionalized polymer.
In one embodiment, the at least one electrically insulating layer structure comprises at least one of the group consisting of resins (such as reinforced or non-reinforced resins, for example epoxy or bismaleimide triazine resins, more particularly FR-4 or FR-5), cyanate ester resins, polyphenyl derivatives, glass (particularly glass fibers, glass spheres, multilayer glass, glassy materials), prepregs, photoimageable dielectric materials, polyimides, polyamides, Liquid Crystal Polymers (LCP), epoxy based laminates, polytetrafluoroethylene (PTFE, teflon), ceramics and metal oxides. Reinforcing structures, such as meshes, fibers or spheres, for example made of glass (multiple layer glass) may also be used. Although prepregs such as FR4 or epoxy-based laminates or photoimageable dielectric materials are generally preferred, other materials may be used. For high frequency applications, high frequency materials such as polytetrafluoroethylene, liquid crystal polymers and/or cyanate ester resins can be implemented in the component carrier as electrically insulating layer structures.
In one embodiment, the at least one electrically conductive layer structure comprises at least one of the group consisting of copper, aluminum, nickel, silver, gold, palladium and tungsten. Although copper is generally preferred, other materials or their coated forms are also feasible, in particular coated with superconducting materials such as graphene.
In one embodiment, the components may be embedded in the stack and/or surface mounted on the stack. For example, such a component may be selected from the group consisting of a non-conductive inlay, a conductive inlay (such as a metal inlay, preferably comprising copper or aluminum), a heat transfer unit (e.g. a heat pipe), a light guiding element (e.g. a light guide or light conductor connection), an electronic component, or a combination thereof. For example, the component may be an active electronic component, a passive electronic component, an electronic chip, a storage device (e.g., DRAM or other data storage), a filter, an integrated circuit, a signal processing component, a power management component, an optoelectronic interface element, a voltage converter (e.g., a DC/DC converter or an AC/DC converter), a cryptographic component, a transmitter and/or receiver, an electromechanical transducer, a sensor, an actuator, a micro-electro-mechanical system (MEMS), a microprocessor, a capacitor, a resistor, an inductor, a battery, a switch, a camera, an antenna, a logic chip, and an energy harvesting unit. However, other components may be embedded in the component carrier. For example, a magnetic element may be used as the component. Such a magnetic element may be a permanent magnetic element (such as a ferromagnetic, antiferromagnetic or ferrimagnetic element, e.g. a ferrite core) or may be a paramagnetic element. However, the component may also be a further component carrier of a board-in-board construction (e.g. a printed circuit board, a substrate or an interposer). The components may be surface mounted on the stack and/or embedded within the stack.
In one embodiment, the component carrier is a laminate type component carrier. In such embodiments, the component carrier is a composite of multiple layers that are stacked and joined together by the application of pressure and/or heat.
After processing the internal layer structure of the component carrier, one surface or both opposite main surfaces of the processed layer structure may be covered (in particular by lamination) symmetrically or asymmetrically with one or more further electrically insulating layer structures and/or electrically conductive layer structures. In other words, lamination may continue until the desired number of layers is obtained.
After the formation of the stack of electrically insulating layer structures and electrically conductive layer structures has been completed, the resulting layer structure or component carrier may be subjected to a surface treatment.
In particular, in terms of surface treatment, an electrically insulating solder resist may be applied to one main surface or both opposite main surfaces of the layer laminate or the component carrier. For example, a solder resist, for example, may be formed over the entire major surface, and the layer of solder resist is subsequently patterned so as to expose one or more electrically conductive surface portions for electrically coupling the component carrier to the electronic peripheral device. The remaining solder resist-covered surface portion of the component carrier can be effectively protected against oxidation or corrosion, in particular copper-containing surface portions.
In terms of surface treatment, surface modification may also be selectively applied to the exposed electrically conductive surface portions of the component carrier. Such a surface modification may be an electrically conductive covering material on exposed electrically conductive layer structures (such as pads, electrically conductive tracks, etc., in particular comprising or consisting of copper) on the surface of the component carrier. If such an exposed conductive layer structure is not protected, the exposed conductive component carrier material (in particular copper) may oxidize, making the component carrier less reliable. The surface modification may then for example be formed as an interface between the surface mounted component and the component carrier. The surface modification has the following functions: protects the exposed conductive layer structure (in particular the copper circuit) and enables a coupling process with one or more components, for example by soldering. Examples of suitable materials for surface modification are Organic Solderability Preservative (OSP), Electroless Nickel Immersion Gold (ENIG), Gold (particularly hard Gold), chemical tin, Nickel-Gold, Nickel-Palladium, Electroless Nickel Immersion Palladium Immersion Gold (ENIPIG), and the like.
The aspects defined above and further aspects of the invention are apparent from the examples of embodiment to be described hereinafter and are explained with reference to these examples of embodiment.
Drawings
FIG. 1 illustrates a cross-sectional view of a photoimageable material in the form of a solid dry film according to an exemplary embodiment of the present invention.
Fig. 2 illustrates a cross-sectional view of a component carrier with traces formed using a photoimageable material according to an exemplary embodiment of the present invention.
Fig. 3 to 6 illustrate cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier with pillars formed using a photo-imageable material according to an exemplary embodiment of the present invention.
Fig. 7 to 10 illustrate cross-sectional views of structures obtained during implementation of a conventional method of manufacturing a component carrier with conductive structures formed using a photoimageable material.
Fig. 11 and 12 illustrate cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier according to an exemplary embodiment of the present invention.
Fig. 13 illustrates an apparatus for manufacturing a photo-imaging material in the form of a dry film having reinforcing particles according to an exemplary embodiment of the present invention.
Figure 14 shows a patterned photoimageable material on a stack of electrically insulating layer structures and electrically conductive layer structures.
FIG. 15 shows a patterned photoimageable material with UV absorbing reinforcing particles on a stack of electrically insulating layer structures and electrically conductive layer structures.
Fig. 16 and 17 illustrate cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier with posts formed using a photoimaging material according to an exemplary embodiment of the present invention.
Detailed Description
The illustration in the drawings is schematically. In different drawings, similar or identical elements are provided with the same reference signs.
Before referring to the drawings, various exemplary embodiments will be described in further detail, some basic considerations will be summarized based on the exemplary embodiments of the present invention that have been developed.
According to an exemplary embodiment of the present invention, a photoimageable material may be provided that includes reinforcing particles in a photoimageable matrix. In particular, exemplary embodiments of the present invention may provide a tempered dry film for precisely defining a conductive structure of a component carrier such as a Printed Circuit Board (PCB).
Conventionally, it is a challenge to achieve both fine line pitch and sufficiently high copper thickness. The dry film plays an important role during the formation of the conductive tracks of the component carrier. During processing, the dry film may be subjected to high forces generated by the processing fluid. Due to the fine pitch between the traces, the exposed portions may bend and create defects. One of the defects is that the dry film resist may be deformed. This can result in different parts of the dry film sticking together. Descriptively, high shear forces may conventionally occur that cause deformation of the patterned portions of the photoimaged dry film.
According to an exemplary embodiment of the present invention, the described problems with dry film resist processing may be partially or completely overcome by increasing the stiffness of the photoimageable material. This can be achieved by adding (e.g. non-photoimaging) reinforcing particles to the actual photoimaging matrix of the photoimaging material. This approach has proven significantly more suitable than increasing the bulk stiffness of the photoimageable substrate. Methods of increasing the bulk stiffness of the photoimageable substrate can alter the chemistry involved, which in turn can affect the development quality of the photoimageable material and, therefore, the accuracy of the conductive traces produced. Furthermore, it may be difficult to find a modified chemical equation to obtain increased stiffness of the photoimageable substrate itself, while at the same time avoiding undesirable effects on processing characteristics (such as processing temperature, etc.). According to an exemplary embodiment of the present invention, by adding reinforcing particles to a (e.g., conventional) photoimageable substrate, the reinforcing particles may be tuned or optimized in their toughening function to conform to the high forces generated by the processing fluid (such as a wet etchant). More advantageously, the photoimageable substrates may be individually tuned or optimized for proper and accurate photoimaging without regard to boundary conditions in terms of tempering during design of the photoimageable substrates. According to an exemplary embodiment of the present invention, the above-mentioned problems with fine line patterning while maintaining sufficient conductive material in the traces may thus be overcome by providing a composite material comprising a photoimageable matrix and reinforcing particles in the matrix.
According to an exemplary embodiment of the invention, with regard to manufacturing a photo-imaging optical material realized as a dry film, this may involve providing the dry film as a wide stock, for example as a web about two meters wide. The resist may be coated from solution on a polyester support (support), dried, and then coated with a polyethylene foil before the broadsheet is rolled into a roll of dry film (which may be, for example, several hundred meters long). Furthermore, a filler in the form of reinforcing particles may be contained in the above-mentioned solution, in order to thereby obtain a photoimageable material with increased rigidity.
With respect to the filler's contribution to stiffness, it is believed that the stiffness gradually and linearly increases from a less filled material (e.g., 38 vol%) to a more filled material (e.g., 70 vol%). In terms of equations, the young's modulus E of the photoimageable composite may be calculated or at least estimated based on the young's modulus of the individual components (i.e., the photoimageable polymer matrix and reinforcing particles) having a partial volume V:
e (complex) ═ V (particle) × E (particle) + V (polymer) × E (polymer))/(V (total))
Preferably, the respective parameter values of the equation satisfy one, some or all of the following conditions:
e (granules) > > E (Polymer)
E (granule) >150Gpa
E (Polymer) <3GPa
It is believed that taking one or more of these measures may increase the stress resistance of the photoimageable material obtained by exemplary embodiments of the present invention.
Generally, the dry film cure after exposure may be about 60 to 70%. It is also believed that the degree of cure may be higher when UV transparent reinforcing particles (e.g., nanofillers) are added. This can have an effect on the beam energy of the beam of electromagnetic radiation used to pattern the photoimageable material.
According to an exemplary embodiment of the present invention, reinforcing particles, for example in the form of nano-silica and/or nano-alumina particles, may be embedded in a polymer matrix, for example a Polyurethane (PU) matrix, as an example of a photo-imaging matrix for photo-imaging materials. It is believed that this may result in significant improvements in the mechanical and thermal properties of the nanocomposite type photoimaging materials of the exemplary embodiments of the present invention. It has been observed that the incorporation of 1% nano-alumina in the PU matrix improves the tensile strength by around 50%. For the nanosilica, the improvement was about 41% at the same concentration. Further, the thermal and mechanical properties of the PU resin deteriorate with the absorption of moisture. Furthermore, it was observed that with the incorporation of nanoparticles, the mechanical and thermal properties of the composite were improved over those of the PU matrix in the presence of absorbed moisture.
It is further believed that by exemplary embodiments of the present invention, patterning with a suitable aspect ratio of a thin adhesion layer (adhesion) may be achieved. The expansion problem may be reduced by the contribution of reinforcing particles or fillers that do not expand, or at least do not expand in a significant manner.
In terms of dry film manufacturing according to exemplary embodiments of the present invention, highly suitable reinforcing particles that may be added to the photoimageable polymer matrix may be made of aluminum trihydride (al-trihydride). The material is transparent to UV. For example, the reinforcing particles may be added in submicron size (e.g., having a preferred size in the range from 5nm to 200 nm). Preferably, the concentration of the reinforcing particles of the photo-imaging material according to the exemplary embodiment of the present invention may be in a range from 10% by volume to 50% by volume.
For example, a suitable material for the reinforcing particles is BaSO4、MgSO4、Al2O3、Al(OH)3、Ca(OH)2、Mg(OH)2、SiO2And the like. Even more particularly, alkali aluminosilicate ceramics that are UV transparent down to 250nm and have higher strength than other spherical fillers may be advantageously used as the material for the reinforcing particles. With respect to nanoparticle production, the corresponding manufacturing process can be tailored according to shape, size, and material properties (such as chemical composition and purity).
Conventionally, dry film development is accomplished by: a wet etchant is sprayed on the dry film to remove selectively exposed (or alternatively selectively non-exposed) portions of the dry film. However, it has been shown that spraying the etching liquid may deform the dry film, which may be particularly problematic when the conductive tracks to be formed are very close together. Stated another way, shear forces induced by liquids may distort the conventional dry film developed. This may result in the conductive traces being undefined or even more seriously unintentionally connected to each other. Such problems occur particularly when the distance between the traces becomes as small as 1 μm to 10 μm or even less. Typical thicknesses of the dry film are 3 μm to 10 μm, or even lower (e.g., 0.5 μm to 10 μm). Thus, avoiding partially undefined traces has proven to be a challenge due to unwanted dry film deformation and the like.
According to an exemplary embodiment of the present invention, a photo imaging material, preferably realized as a dry film, is provided, comprising fillers or reinforcing particles that increase the stiffness or rigidity of the photo imaging material. Very advantageously, the reinforcing particles may be UV transparent so that they do not absorb electromagnetic radiation used during patterning of the photoimageable material. In particular, it may be advantageous when the material of the reinforcing particles does not reflect UV light, in particular does not reflect UV light in the wavelength range between 350nm and 400 nm. Thus, one exemplary embodiment of the present invention provides a photoimageable material (particularly in the form of a dry film) comprised of a photoimageable substrate and a toughened filler on and/or in the photoimageable substrate. The photoimageable substrate may be an organic material that polymerizes and/or cross-links when irradiated with UV radiation. The filler or reinforcing particles, for example made of aluminium trihydroxide, should have the property of not excessively absorbing the above-mentioned electromagnetic radiation and of providing rigidity or rigidity to the photoimageable material as a whole.
For example, the reinforcing particles may have the shape of spheres, may be shaped as flakes (flake), may be shaped as plates (platelets) or the like. They may for example have 20 to 80% by volume of the photoimageable material. The size of the reinforcing particles may preferably be less than 100 nm. After the corresponding photoimageable material has been patterned according to an exemplary embodiment of the present invention, the recesses of the patterned photoimageable material may be filled with a conductive material, such as copper. Thereafter, the dry film can be stripped away, leaving conductive copper structures (e.g., conductive traces or copper pillars with small line-to-pitch ratios).
FIG. 1 illustrates a cross-sectional view of a photoimageable material 100 in the form of a layered solid dry film according to an exemplary embodiment of the present invention. As described below, the photoimageable material 100 may be used for fine line patterning of PCB-type component carriers 110, particularly for electrical trace formation or formation of copper pillars.
In the illustrated embodiment, the photoimageable material 100 is provided in the form of a layer having a uniform thickness D. The thickness D may preferably be in the range between 3 μm and 10 μm, e.g. 5 μm.
As illustrated by detail 150, photoimaging material 100 includes photoimaging matrix 102 and reinforcing particles 104 in matrix 102 that serve to mechanically reinforce, stiffen, or toughen photoimaging material 100.
Advantageously, the reinforcing particles 104 are transparent to optical radiation, for example may be optically transparent to electromagnetic radiation having a wavelength of 350 nm. With such optical transparency, it is possible to ensure: the reinforcing particles 104 do not interfere with the selective chemical modification of the photoimageable substrate 102 when irradiated with suitable electromagnetic radiation. More generally, reinforcing particles 104 may be optically transparent in the wavelength range between 340nm and 410nm (i.e., in the range between blue light and near-ultraviolet radiation). Although the reinforcing particles 104 may absorb a portion of the electromagnetic radiation while passing a substantial amount of the electromagnetic radiation, the material of the reinforcing particles 104 should not reflect a substantial amount of the electromagnetic radiation. For example, at least 90% of the reinforcing particles 104 may have a size d smaller than 300nm, in particular smaller than 100nm, in particular in the range between 10nm and 100 nm. For example, the reinforcing particles 104 may be made of aluminum oxide or aluminum hydroxide. Very advantageously, the reinforcing particles 108 may be made of a non-expandable material, which facilitates precise geometric definition of the patterning process.
The photoimageable material 100 may include between 20% and 80% by volume of reinforcing particles 104. Accordingly, photoimageable substrate 102 may comprise between 20% and 80% by volume of photoimageable material 100. Photoimaging material 100 may or may not include one or more additives.
As can be seen in detail 150 of fig. 1, photoimageable material 100 may be provided with a substantially homogeneous mixture between photoimageable matrix 102 and reinforcing particles 104. With the described configuration, the photoimageable material 100 may be suitably patterned to form conductive traces with small line-to-pitch ratios or copper pillars with well-defined aspect ratios (and in particular high aspect ratios, e.g., 3 or more).
As an alternative to the solid dry film of fig. 1, the photoimaging substrate may be liquid (not shown). In such embodiments, a suspension of a liquid matrix and solid reinforcing particles may be prepared. The resulting flowable photoimageable material may be applied to a layer stack forming a patterned metal layer or the like.
Fig. 2 illustrates a cross-sectional view of a component carrier 110 with conductive traces formed using a photoimaging material 100 according to an exemplary embodiment of the present invention (e.g., the embodiment shown in fig. 1).
The illustrated component carrier 110 comprises a stack 116 of laminated electrically conductive layer structures 114 and electrically insulating layer structures 112, see detail 154. The electrically insulating layer structure 112 may comprise a resin (such as an epoxy resin) and optionally reinforcing particles (such as glass fibers or glass spheres). The electrically insulating layer structure 112 may, for example, be made of a fully cured FR4 material (i.e. a material with a resin that has been fully cross-linked and cannot be re-melted or made flowable by the application of mechanical pressure and/or heat). The conductive layer structure 114 may be a metal layer, such as a copper foil and/or a laser drilled copper via.
A seed layer 151 (preferably made of copper) is disposed on top of the stack 116. Further, the conductive structures 120 are disposed on top of the stack 116 in the form of copper traces, each having a lateral width W and a vertical height H, and formed side-by-side on the stack 116 with a minimum lateral spacing B therebetween. Preferably, the minimum pitch B is not greater than 2 μm, for example 1.5 μm. The height H may be greater than 5 μm, for example in a range between 10 μm and 15 μm. For example, the width W may be 5 μm. The ratio between the height H and the width W may be greater than 2, for example in the range between 2 and 3. The line/pitch ratio of the individual traces or conductive structures 120 may be defined by the values of the line width W and the pitch B.
As illustrated by detail 152, the sidewalls 161 of the conductive structures 120 may have a significant roughness Ra, for example in a range between 50nm and 200 nm. This significant roughness is due to the presence of reinforcing particles 104 at the sidewalls 161, which have been formed by patterning the entire layer of photoimageable material 100 (compare the description of fig. 3-6).
The component carrier 110 according to fig. 2 may be manufactured using the photoimaging material 100 shown in fig. 1. For this purpose, a procedure similar to that described below with reference to fig. 3 to 6 may be implemented. As can be seen in fig. 2, the conductive traces or structures 120 may have a small pitch B, a small lateral width W, and a relatively high height H. As can be seen from detail 152, the sidewalls 161 of the conductive structures 120 have a relatively high roughness Ra as a result of the presence of the reinforcing particles 104 of the photo-imaging material 100. When the photoimageable material 100 is patterned, the reinforcing particles 104 will also be present at the sidewalls of the patterned photoimageable material 100, which may translate into relatively rough inverse (inverse) shaped sidewalls 161 of the formed conductive structures 120. Illustratively, the conductive structures 120 have a negatively-extending (negative) shape as compared to the patterned photoimageable material 100.
To complete the formation of the component carrier 110, the seed layer 151 may be etched after the dry film has been stripped. This may remove the exposed portions of the seed layer 151 and the material on top of the formed conductive structures 120, i.e., copper from the copper traces.
Another detail 153 of fig. 2 illustrates the component carrier 110 prior to stripping of the dry film type photoimaging material 100, which is illustrated in a patterned state in detail 153. As shown, the height D of the patterned photoimaging material 100 may be greater than the height H of the conductive structures 120 formed between the separated structures of photoimaging material 100 and on the seed layer 151. For example, the ratio D/H between the height D of the respective structures of the photoimageable material 100 and the height H of the conductive structure 120 may be in the range of between 55% and 80%, and particularly may be about 2/3. The aspect ratio of the patterned individual structures of the photoimageable material 100, i.e. the ratio between the height D and the diameter D, may be greater than 1, in particular greater than 2, for example about 3.
As shown in fig. 2, components 122 (such as semiconductor chips) may optionally be embedded in the stack 116. Additionally or alternatively, the component 122 may also be surface mounted on the stack 116 (not shown). For example, at least one component 122 may be electrically connected with conductive layer structure 114 and/or with conductive traces that make up conductive structure 120.
Fig. 3 to 6 illustrate cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier 110 with pillars formed using a photoimaging material 100 according to an exemplary embodiment of the present invention.
Referring to fig. 3, a laminated layer stack 116 is provided comprising at least one electrically insulating layer structure 112 and at least one electrically conductive layer structure 114 (compare detail 154 in fig. 2). As shown, the layer of dry film type photoimaging material 100 is laminated on the stack 116. For example, the photoimageable material 100 shown in FIG. 3 may be implemented as shown in FIG. 1, compare detail 150.
To obtain the structure shown in fig. 4, the structure shown in fig. 3 may be subjected to irradiation with electromagnetic radiation 156, for example in the near UV wavelength range between 350nm and 400 nm. Thus, the surface of photoimageable material 100 is irradiated with a patterned beam of light. This will selectively change the chemical composition of the material of the photoimaging material 100 in the irradiated portions. For example, photoimageable substrate 102 may be selectively polymerized and/or crosslinked in the irradiated regions of photoimageable material 100.
Referring to fig. 5, recesses 118 are formed in the layer of photoimageable material 100 by selectively removing the irradiated portions of photoimageable material 100 by etching. For example, after irradiation with electromagnetic radiation 156, wet etching may be accomplished by spraying a liquid etchant onto the structure shown in FIG. 4.
Thus, supplying a liquid etchant to the structure obtained after performing the process described with reference to FIG. 4 will selectively remove only the irradiated portions of photoimageable material 100. Alternatively, the liquid etchant and the photoimageable substrate 102 may be made of materials with inverse properties such that only the non-irradiated portions of the photoimageable material 100 may be selectively removed by etching.
In both alternatives, a patterned photoimageable material 100 is obtained, as shown in fig. 5. Thanks to the provision of the reinforcing particles 104 in the photoimageable material 100, the photoimageable material 100 is mechanically reinforced so that it can withstand treatment with a liquid etchant (which may be sprayed onto the photoimageable material 100) without deformation. Thus, well-defined separated structures of patterned photoimaging material 100 with vertical sidewalls and uniform thickness can be obtained.
Referring to fig. 6, a component carrier 110 according to another exemplary embodiment is shown that has been manufactured according to the process described with reference to fig. 3 to 5.
In order to obtain the component carrier 110 shown in fig. 6 on the basis of the structure shown in fig. 5, the recess 118 may be partially or completely filled with electrically conductive structures 120, which may be made of copper. This may be accomplished, for example, by one or more water electroplating (galvanic plating) processes. Thereafter, the remaining photo-imaging material 100 may be removed from the stack 116 such that only the conductive structures 120 remain.
In the illustrated embodiment, the process is carried out such that the conductive structures 120 are copper pillars. The conductive pillars are formed on the stack 116 with a vertical height h in a range between 50 μm and 150 μm. The lateral width b of the pillars is preferably in the range between 30 μm and 80 μm. The aspect ratio between the vertical height h and the transverse width b is preferably greater than 1, in particular greater than 2.
The sidewalls of the patterned portion of the photoimageable material 100 are vertical and well-defined due to the toughening function of the reinforcing particles 104 of the photoimageable material 100. This translates into a suitable rectangular cross-section of the fabricated conductive structure 120, as shown in fig. 6.
Fig. 7 to 10 illustrate cross-sectional views of structures obtained during implementation of a conventional method of manufacturing a component carrier 200 with electrically conductive structures 202 formed using a photo-imageable material 204. Thus, fig. 7-10 illustrate conventional processing of a conventional photoimageable material 204 consisting of only a photoimageable matrix (i.e., no reinforcing particles).
Fig. 7 shows a conventional photoimaging material 204 of dry film type laminated as a layer on a layer stack 210 of a PCB under manufacture. According to fig. 8, selective portions of a conventional photoimageable material 204 are irradiated with electromagnetic radiation 206 to chemically modify the irradiated material. As shown in fig. 9, the result of processing the structure obtained after the process described with reference to fig. 8 with a liquid etchant is shown. The liquid etchant, which may be sprayed on top of the irradiated photoimageable material 204, may exert mechanical stress on small portions of the patterned photoimageable material 204, which may lead to deformation and thus poor and non-vertical definition of the sidewalls of the patterned photoimageable material 204, i.e., undesirably curved sidewalls 208. As a result, the inverse-shaped conductive structure 202 formed by electroplating in the recess 212 of the structure shown in fig. 9 also exhibits poor pitch definition, see fig. 10.
As shown and described with respect to the embodiments of the present invention of fig. 1-6, by adding reinforcing particles 104 to the photoimageable matrix 102, the accuracy of the resulting conductive structure 120 may thus be significantly improved compared to the conventional methods shown in fig. 7-10.
Fig. 11 and 12 illustrate cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier 110 according to an exemplary embodiment of the invention. FIG. 11 shows the results of a manufacturing process using a photoimageable material without reinforcing particles. Fig. 12 shows the results of a manufacturing method using a photoimaging material 100 with reinforcing particles 104 according to an exemplary embodiment of the present invention. Fig. 11 and 12 illustrate that the addition of reinforcing particles 104 to the photoimageable matrix 102 may reduce undesirable swelling. Fig. 11 shows a high expansion and fig. 12 shows a low expansion. The reduction in expansion in fig. 12 compared to fig. 11 is believed to be a result of the contribution of reinforcing particles 104 to photoimageable substrate 102. Advantageously, the reinforcing particles 104 may be made of a non-expandable material.
Fig. 13 illustrates an apparatus 300 for manufacturing a photoimageable material 100 in the form of a dry film according to an exemplary embodiment of the present invention.
A first unwinder 302 unwinds support layer 301 of material for supporting reinforcing particles 104 and photoimaging substrate 102. The material of the photoimaged substrate 102 may be supplied to the coater 304 from a container 306. Reinforcing particles 104 may be supplied to coater 304 from container 316. One or more mixers 305 may also be provided to properly mix the reinforcing particles 104 with the material of the photoimageable matrix 102. At coater 304, coating support layer 301 with the material of reinforcing particles 104 and photoimaging substrate 102 is performed. After this coating process, support layer 301 with the coated composition of photoimaging material 100 is supplied to drying unit 308 for drying a previously liquid material, such as photoimaging substrate 102. At laminator 310, the layer of photoimageable substrate 102 with reinforcing particles 104 applied on support layer 301 may be laminated with a cover layer 303 provided by a second unwinder 312. At laminator 310, the layers are connected and fed to a winder 314, which winds the protected dry film as an example of a photoimageable material 100 according to an exemplary embodiment of the present invention.
It should be noted that the nanoparticle production process used to make the reinforcing particles 104 may depend on the shape, size, chemical composition, and purity of the materials involved.
Figure 14 shows the patterned photoimageable material 100 on the stack 116. By adding reinforcing particles 104 to photoimageable material 100 (compare fig. 1), stress resistance is increased. The fine line structure of the dry film type photo-imaging material 100 shown in fig. 14 can thus be significantly improved. During the curing process of the photoimaging material 100, shrinkage or expansion may occur, which may create thermomechanical stress on the photoimaging material 100, particularly at the interface with the stack 116. The bottom of the dry film may thus adhere on the seed layer 151, so that the conventional problems as illustrated in fig. 10 and 11 may occur. Such problems can be significantly suppressed or completely eliminated by the addition of reinforcing particles 104, comparing fig. 6 and 12.
The degree of curing during curing of the dry film type photoimageable material after exposure may be in a range between 60% and 70%. However, if the transparent nanofiller is added in the form of reinforcing particles 104, the degree of curing may be higher. Thus, by adding reinforcing particles 104 (e.g., nano-silica and/or nano-alumina particles) to the photoimaging material 100, for example, in the polyurethane photoimaging matrix 102, the mechanical and thermal properties of the nanocomposite photoimaging material 100 can be significantly improved. For example, by adding 1 volume percent nano-alumina to the polyurethane matrix, the tensile strength can be increased by about 50%. When 1% by volume of nano-silica is added as reinforcing particles 104, the increase may be 41%. By incorporating reinforcing particles 104 into photoimageable matrix 102, improvements can also be achieved in the presence of interfering moisture.
Fig. 15 shows a patterned photoimageable material 204' with UV absorbing reinforcing particles on a layer stack 210. Due to excessive UV-absorbing reinforcing particles, patterning of the photoimageable material 204' may result in undesirable formation of recesses (pockets) 220 or indentations (indentations) in the lower portion of the patterned photoimageable material 204' due to improper development of the material of the photoimageable material 204 '. Constructing the reinforcing particles of a material having low UV absorption characteristics, substantially vertical sidewalls of the patterned photoimaging material 204' may be obtained, as indicated by reference numeral 230.
Fig. 16 and 17 illustrate cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier 110 with electrically conductive structures 120 configured as pillars formed using a photoimaging material 100 according to an exemplary embodiment of the present invention.
Referring to fig. 16, a structure similar to that shown in fig. 14 is shown in which a metal structure 159 (particularly made of copper) has been formed by electroplating a metal material onto seed layer 151 in the gaps between adjacent separated structures of patterned photoimaging material 100. As can be seen, the electroplating process may result in vertically protruding copper portions that may also partially cover the upper major surface of the patterned structure of photoimageable material 100.
Referring to fig. 17, the structure shown in fig. 16 may be subjected to a grinding process to planarize the metal structure 159, thereby forming pillar-shaped conductive structures 120. The vertical height h of the conductive copper pillars formed as conductive structures 120 on stack 116 is preferably at least 100 μm, for example 150 μm. The lateral width b of the pillars may be larger than 30 μm, for example 50 μm.
In summary, exemplary embodiments of the present invention may provide a photoimaging material with increased stiffness. Such photoimageable materials may be configured as dry films. The use of such photoimageable materials allows the production of fine line pitch (e.g., under 5 μm/5 μm) structures with higher copper thicknesses. Thus, exemplary embodiments of the present invention allow for higher interconnect densities to be achieved while maintaining sufficient copper thickness.
It should be noted that the term "comprising" does not exclude other elements or steps and the "a" or "an" does not exclude a plurality. Furthermore, elements described in association with different embodiments may be combined.
It should also be noted that reference signs in the claims shall not be construed as limiting the scope of the claims.
The invention is not limited to the preferred embodiments described above and shown in the drawings. On the contrary, many variations are possible using the principles according to the invention and the solutions shown, even in the case of fundamentally different embodiments.
Claims (29)
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| JP2001274293A (en) * | 2000-03-24 | 2001-10-05 | Hitachi Chem Co Ltd | Semiconductor device and substrate for mounting semiconductor element |
| JP2017073531A (en) * | 2015-10-06 | 2017-04-13 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | Printed circuit board and manufacturing method thereof |
| JP2017079320A (en) * | 2015-10-19 | 2017-04-27 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | Circuit board and method of producing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274293A (en) * | 2000-03-24 | 2001-10-05 | Hitachi Chem Co Ltd | Semiconductor device and substrate for mounting semiconductor element |
| JP2017073531A (en) * | 2015-10-06 | 2017-04-13 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | Printed circuit board and manufacturing method thereof |
| JP2017079320A (en) * | 2015-10-19 | 2017-04-27 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | Circuit board and method of producing the same |
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