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CN112813415A - 腔体内的清洁方法 - Google Patents

腔体内的清洁方法 Download PDF

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CN112813415A
CN112813415A CN202011626986.5A CN202011626986A CN112813415A CN 112813415 A CN112813415 A CN 112813415A CN 202011626986 A CN202011626986 A CN 202011626986A CN 112813415 A CN112813415 A CN 112813415A
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张亚新
李培培
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Piotech Inc
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Abstract

一种腔体内的清洁方法，其包含：下电极控温步骤，其系控制下电极至预定温度；电极间距调整步骤，其系将前述下电极升降，控制上电极与前述下电极间之间距；薄膜沉积步骤，其系将薄膜沉积于基板上；清洁气体通入步骤，其系从前述上电极通入电浆(等离子体)状态之清洁气体；及清洁气体压力控制步骤，其系藉由阀门的开度调节，调整腔体内前述清洁气体的压力。

Description

腔体内的清洁方法
技术领域
本发明系关于一种腔体内的清洁方法，尤其系应用于半导体薄膜制造之腔体内的清洁方法。
背景技术
电浆(等离子体)化学气相沉积，主要用于在基板上形成薄膜，但同时也会在腔体内零部件表面形成薄膜。腔体内零件表面的薄膜经过长时间累积后会掉落，形成微粒落在基板表面，影响基板表面薄膜的性能。因此，在基板沉积完成离开腔体后，需要使用清洁气体，对腔体内的环境和零件表面进行清洁。
由于清洁的时间的长短会直接影响半导体设备的产能，因此需要一种方法提高腔体内环境和零件表面的清洁效率。
发明内容
本发明以解决上述问题为目的，以提高清洁电浆(等离子体)化学气相沉积在腔体内形成的多余薄膜的效率，并提高半导体设备的产能。
本发明提供一种腔体内的清洁方法，其包含：下电极控温步骤，其系控制下电极至预定温度；电极间距调整步骤，其系将前述下电极升降，控制上电极与前述下电极间之间距；薄膜沉积步骤，其系将薄膜沉积于基板上；清洁气体通入步骤，其系从腔体的一上电极通入电浆(等离子体)状态之清洁气体至腔体中；及清洁气体压力控制步骤，其系藉由一阀门调节手段，调整腔体内前述清洁气体的压力在一第一压力和一第二压力之间切换，且该第一压力大于该第二压力。
较佳地，前述预定温度为150℃～400℃。较佳地，该方法还包含藉由电动机带动前述下电极升降，并将前述上电极与前述下电极间之间距控制在6～15公厘(毫米)。较佳地，前述清洁气体为NF3，其经由电浆(等离子体)源产生器形成氟离子后，前述氟离子经由前述上电极通入腔体内。较佳地，前述清洁气体进入所述腔体的流量为1500～4500sccm。较佳地，所述阀门调节手段，藉由蝶阀控制前述腔体内之前述清洁气体的压力。较佳地，前述腔体内之压力在清洁过程中系在该第一压力和该第二压力间切换，前述第一压力为3～6torr，前述第二压力为0.5～2torr。较佳地，前述第一压力为一高压状态和前述第二压力为一低压状态，两者间之切换频率为每 5～15秒1次。
本发明藉由快速切换清洁气体压力，提高清洁电浆(等离子体)化学气相沉积在腔体内形成的多余薄膜的效率，进而提高半导体设备的产能。
附图说明
下面结合附图及实施方式对本发明作进一步详细的说明：
图1为本发明第一实施例之电浆(等离子体)化学气相沉积装置的腔体配置图。
图2为本发明第一实施例之第二侧腔体剖面示意图。
图中，11、第一侧腔体；12、第二侧腔体；111、上电极；112：下电极； a～i、位置。
具体实施方式
＜第一实施例＞
请参阅图1，系本发明第一实施例之电浆(等离子体)化学气相沉积装置的一处理腔体配置图，其为俯视图，显示腔体的底部和配置(未安装加热盘)。如图所示，沉积装置包含第一侧腔体(图中右侧)；及第二侧腔体 (图中左侧)。第一侧腔体及第二侧腔体系完全相同且对称配置，且于第一侧腔体；及第二侧腔体上的九个位置a～i上，放置供膜厚量测之样块。所述样块为可自腔体取出的零件，其因沉积所形成的薄膜厚度可由一已知的手段去量测，以推估腔体内其他零件所累积的成膜情况。延图1上所示之A－ A之剖面线，即可得到第二侧腔体之剖面示意图，如图2所示。
请参阅图2，系本发明第一实施例之第二侧腔体示意图。如图所示，第二侧腔体中基本上包含作为位于腔体顶部喷淋组件的上电极111、作为加热盘的下电极112及热电偶(图中未显示)。加热盘具有加热单元，其连接至一温控装置(未显示)。此外，加热盘的升降是由一马达(未显示)所控制。一或多个位置传感器可被提供以配置成用于识别上电极111和下电极112之间的间距。上电极111的位置系固定，并具有许多通孔，供清洁气体流入腔体内。下电极112(即加热盘)，供基板之加热使用。热电偶可设置于腔体的壁或加热盘上，用来量测腔体内之温度。马达系用来控制下电极之位置，搭配位置位置感侧器的使用，来控制上电极111与下电极112之间的间距。
本实施例所使用之清洁气体为NF3，以下接着说明本发明之腔体内的清洁方法具体步骤如下：
1)将下电极112加热盘的温度控制为400℃，藉由热电偶实时测量温度，并藉由温控装置控制温度。温度控制精度范围为±0.75％，以本实施例而言，即为397℃～403℃。
2)从腔体内，将已经完成电浆(等离子体)化学气相沉积而于表面形成薄膜之基板，藉由机械手取出。同时，量测放置在如图2所示之九个不同位置a～i的样块上之薄膜膜厚。如下表所示，假设第一侧腔体11及第二侧腔体12内的9个不同位置a～i均有薄膜沉积，而形成残余薄膜。
Figure BDA0002877709900000041
3)藉由马达和位置传感器，调整并控制使上电极与下电极的间距为 8-10mm。
4)通入3000-3500sccm的NF3气体作为清洁气体，清洁气体系先透过设置在远程之一电浆(等离子体)源产生器而形成部分氟离子，以部分氟离子之形态由上电极111进入第一侧腔体及第二侧腔体内。
5)利用一已知手段(如调节蝶阀之开度)来控制第一侧腔体与第二侧腔体内之压力。第一侧腔体及第二侧腔体内之压力系在清洁过程中，同步在高压状态和低压状态间切换，高压状态为3～6torr，低压状态为0.5～2torr。
6)藉由蝶阀的调节，让清洁气体在高压状态工作10s后，切换到低压状态工作10s，循环切换四次。(切换所需时间约0.1s)
藉由本发明的处理方式，如下表所示，与常规处理相比(常规处理系在高压状态工作40s，低压状态工作40s下循环一次)可以将腔体内的单位时间清洁效率提高40％左右。
Figure BDA0002877709900000051
至此，本发明之较佳实施例，已经由上述说明以及图式加以说明。在本说明书中所揭露的所有特征都可能与其他手段结合，本说明书中所揭露的每一个特征都可能选择性的以相同、相等或相似目的特征所取代，因此，除了特别显著的特征之外，所有的本说明书所揭露的特征仅是相等或相似特征中的一个例子。经过本发明较佳实施例之描述后，熟悉此一技术领域人员应可了解到，本发明实为一新颖、进步且具产业实用性之发明，深具发展价值。本发明得由熟悉技艺之人任施匠思而为诸般修饰(例如调整部分组件之相对位置或分流装置之架构)，然不脱如附申请范围所欲保护者。

Claims (8)

1.腔体内的清洁方法，其特征在于，包含：
下电极控温步骤，其系控制下电极至预定温度；
电极间距调整步骤，其系将前述下电极升降，控制上电极与前述下电极间之间距；
薄膜沉积步骤，其系将薄膜沉积于基板上；
清洁气体通入步骤，其系从腔体的一上电极通入电浆状态之清洁气体至腔体中；及
清洁气体压力控制步骤，其系藉由一阀门调节手段，调整腔体内前述清洁气体的压力在一第一压力和一第二压力之间循环切换数次，且该第一压力大于该第二压力。
2.如权利要求1所述的清洁方法，其特征在于：前述预定温度为150℃～400℃。
3.如权利要求1所述的清洁方法，其特征在于：还包含藉由电动机带动前述下电极升降，并将前述上电极与前述下电极间之间距控制在6～15毫米。
4.如权利要求1所述的清洁方法，其特征在于：前述清洁气体为NF3，其经由电浆源产生器形成氟离子后，前述氟离子经由前述上电极通入腔体内。
5.如权利要求1所述的清洁方法，其特征在于：前述清洁气体进入所述腔体的流量为1500～4500sccm。
6.如权利要求1所述的清洁方法，其特征在于：所述阀门调节手段，藉由一蝶阀控制前述腔体内之前述清洁气体的压力。
7.如权利要求1所述的清洁方法，其特征在于：前述腔体内之压力在清洁过程中系在该第一压力和该第二压力间切换，前述第一压力为3～6torr，前述第二压力为0.5～2torr。
8.如权利要求1所述的清洁方法，其特征在于：前述第一压力为一高压状态和前述第二压力为一低压状态，两者间之切换频率为每5～15秒切换1次。
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