CN112816846A - Semiconductor power device test warm table - Google Patents
Semiconductor power device test warm table Download PDFInfo
- Publication number
- CN112816846A CN112816846A CN202110159395.XA CN202110159395A CN112816846A CN 112816846 A CN112816846 A CN 112816846A CN 202110159395 A CN202110159395 A CN 202110159395A CN 112816846 A CN112816846 A CN 112816846A
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- China
- Prior art keywords
- power device
- heating
- ceramic layer
- semiconductor power
- temperature probe
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
本发明公开了一种半导体功率器件测试加热台，从上到下依次包括陶瓷层和轻质金属层，所述陶瓷层的厚度不大于5mm；所述轻质金属层的上表面均匀开设有若干条形槽，每个所述的条形槽内设有加热元件和多个温度探头，所述加热元件沿所述条形槽的长度方向埋设，所述温度探头沿所述条形槽的长度方向均匀埋设，所述温度探头与所述陶瓷层的底面接触；所述条形槽内的空隙用填充导热材料进行填充；所述陶瓷层的上方设有用于夹持半导体器件的夹具，使用时在所述半导体器件与所述陶瓷层之间涂上导热材料。本发明质量较轻，移动方便；温度分布均匀，准确可控，调温快速，有利于半导体器件的准确测试。
The invention discloses a semiconductor power device testing heating table, which sequentially includes a ceramic layer and a light metal layer from top to bottom, the thickness of the ceramic layer is not more than 5 mm; the upper surface of the light metal layer is uniformly provided with several Strip grooves, each of the strip grooves is provided with a heating element and a plurality of temperature probes, the heating elements are embedded along the length direction of the strip grooves, and the temperature probes are along the length of the strip grooves The temperature probes are in contact with the bottom surface of the ceramic layer; the gaps in the strip grooves are filled with thermally conductive materials; the ceramic layer is provided with a clamp for clamping semiconductor devices. A thermally conductive material is applied between the semiconductor device and the ceramic layer. The invention has the advantages of light weight, convenient movement, uniform temperature distribution, accurate and controllable temperature adjustment, and rapid temperature adjustment, which is beneficial to the accurate testing of semiconductor devices.
Description
Technical Field
The invention relates to a semiconductor power device testing heating table, and belongs to the technical field of semiconductor device heating equipment.
Background
When a laboratory is used for testing and analyzing semiconductor devices, a heating table is needed to be used for heating so as to create a required working environment and accurately keep a constant temperature state. In order to ensure that the heat capacity of the heating table is large enough, the existing heating table in the market usually uses a heavy metal block as a main body. However, in actual use, problems such as different heating speeds, uneven heating, large temperature distribution difference, and the like occur at each position. The existence of the above problems can cause inconsistent environmental conditions in the testing process of the semiconductor power device, and cause the testing result to exceed the error range.
Disclosure of Invention
The invention aims to solve the defects of the background technology and provide the semiconductor power device testing heating table which is light in weight, uniform in temperature distribution, rapid and accurate in temperature control and stable in temperature conduction.
In order to achieve the above purpose, the invention provides the following technical scheme: a semiconductor power device test heating table sequentially comprises a ceramic layer and a light metal layer from top to bottom, wherein the thickness of the ceramic layer is not more than 5 mm;
the upper surface of the light metal layer is uniformly provided with a plurality of strip-shaped grooves, each strip-shaped groove is internally provided with a heating element and a plurality of temperature probes, the heating elements are embedded along the length direction of the strip-shaped grooves, the temperature probes are uniformly embedded along the length direction of the strip-shaped grooves, and the temperature probes are contacted with the bottom surface of the ceramic layer; the gaps in the strip-shaped grooves are filled with filling heat conduction materials;
and a clamp for clamping the semiconductor device is arranged above the ceramic layer, and a heat conduction material is coated between the semiconductor device and the ceramic layer when the ceramic layer is used.
Preferably, the ceramic layer is made of Al2O3Ceramics, SiC ceramics, AlN ceramics or TiO2A ceramic.
Preferably, the light metal layer is made of Al alloy, stainless steel or Ti alloy.
Preferably, the heating element is an iron-chromium-aluminum heating wire or a nickel-chromium heating wire.
Preferably, the temperature probe is a Pt10 temperature probe, a Pt100 temperature probe or a nickel chromium-copper baking temperature probe.
Preferably, the filling heat conduction material is heat conduction resin or heat conduction glue.
Preferably, the heat conducting material is heat conducting silicone grease or heat conducting paste.
Preferably, the clamp is made of iron, aluminum or copper.
Preferably, the heating device further comprises a power controller, one end of the heating element is connected with the power controller through an electrified lead, and the temperature probe is connected with the power controller through a temperature probe test connecting wire.
Preferably, the heating elements in the adjacent strip-shaped grooves are staggered with the end connected with the electrifying wire.
Compared with the prior art, the invention has the advantages that: the invention has lighter weight and convenient movement; the temperature distribution is uniform, accurate and controllable, the temperature adjustment is rapid, and the accurate test of the semiconductor device is facilitated.
Drawings
Fig. 1 is a schematic overall view of a semiconductor power device test heating table according to the present invention.
Fig. 2 is an exploded view of a semiconductor power device test heating table according to the present invention.
FIG. 3 is a cross-sectional view of a heating stage for testing a semiconductor power device according to the present invention.
Fig. 4 is a schematic front view of a semiconductor power device testing heating stage according to the present invention.
FIG. 5 is a schematic side view of a semiconductor power device test heating stage according to the present invention.
Fig. 6 is a schematic top view of a semiconductor power device testing heating stage according to the present invention.
In the figure: 1-a light metal layer; 2-a ceramic layer; 3-filling heat conducting material; 4-a heating element; 5-a power-on wire; 6-testing a connecting wire by a temperature probe; 7-temperature probe.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further specifically described below by way of embodiments in combination with the accompanying drawings.
Example 1
A semiconductor power device test heating table for heating during semiconductor device test analysis, as shown in fig. 1-6, the heating table comprising: a light metal layer 1; a ceramic layer 2; filling heat conduction materials 3; a heating element 4; an energizing wire 5; the temperature probe tests the connecting wire 6; a temperature probe 7; a power supply controller (not shown in the figure). In this embodiment, the heating element 4 is an iron-chromium-aluminum heating wire, the temperature probe 7 is a Pt10 temperature probe, and the filling heat conduction material 3 is heat conduction resin.
The power supply controller provides external voltage and current required by the heating table, and the voltage, the current and the temperature of each position of the heating table can be checked on a display screen of the controller.
Wherein the heating table adopts an upper-layer and a lower-layer structure, and the upper ceramic layer 2 is a thin ceramic Al layer2O3The thickness is 2mm, and the lower light metal layer 1 is made of light metal aluminum alloy and is used for reducing the weight of the heating table; then, slotting the lower light metal layer 1 by utilizing the easy processability of metal, and embedding a plurality of groups of iron-chromium-aluminum heating wires and a Pt10 temperature probe; specifically, a plurality of strip-shaped grooves are uniformly formed in the upper surface of the light metal layer 1, and an iron-chromium-aluminum heating wire buried along the length direction of each strip-shaped groove and a plurality of Pt10 temperature probes distributed along the length direction of each strip-shaped groove are arranged in each strip-shaped groove; one end of each group of iron-chromium-aluminum heating wires is respectively connected with a power supply controller through a power-on lead, and the controller provides required current to realize independent temperature control of the heating wires; in this embodiment, the iron-chromium-aluminum heating wire is connected with a power supplyOne end of the conducting wire is distributed at two ends of the heating table in a staggered mode, so that on one hand, the temperature of the heating table is guaranteed to be uniform, and on the other hand, enough space is provided for connection of the electrified conducting wire. Meanwhile, in the embodiment, the temperature of each position of the ceramic layer 2 on the upper layer of the heating table is monitored in real time by using the temperature probe 7, and the upper end of the temperature probe 7 and the lower end surface of the ceramic layer 2 are located on the same plane, so that good contact is achieved, and the measured temperature is guaranteed to be accurate. The gaps in the strip-shaped grooves are filled with heat-conducting resin to conduct heat quickly.
In the use process, a guide rail is arranged above the ceramic layer 2, an aluminum clamp capable of moving along the guide rail is arranged on the guide rail, a heating position is selected on the surface of the ceramic layer 2, the semiconductor device is clamped on the heating table by the aluminum clamp, and heat-conducting silicone grease is coated between the semiconductor device and the ceramic layer 2, so that the temperature is well conducted. The specific structure of the guide rail and the aluminum clamp is only required to be the conventional structure in the prior art, and the embodiment is not limited.
The semiconductor power device testing heating table of the embodiment can realize uniform temperature, and real-time temperature control and monitoring are realized at each heating position; the weight is light, the movement is convenient, and the temperature can be quickly adjusted; the heating requirement of the test analysis of the semiconductor device can be well met.
Example 2
A semiconductor power device test heating table for heating during semiconductor device test analysis, as shown in fig. 1-6, the heating table comprising: a light metal layer 1; a ceramic layer 2; filling heat conduction materials 3; a heating element 4; an energizing wire 5; the temperature probe tests the connecting wire 6; a temperature probe 7; a power supply controller (not shown in the figure). In this embodiment, the heating element 4 is a nickel-chromium heating wire, the temperature probe 7 is a Pt100 temperature probe, and the filling heat conduction material 3 is a heat conduction glue.
The power supply controller provides external voltage and current required by the heating table, and the voltage, the current and the temperature of each position of the heating table can be checked on a display screen of the controller.
The heating table is of an upper-layer structure and a lower-layer structure, the upper-layer ceramic layer 2 is a thin-layer ceramic AlN with the thickness of 4mm, and the lower-layer light metal layer 1 is made of light metal stainless steel and used for reducing the weight of the heating table; then, slotting the lower light metal layer 1 by utilizing the easy processability of metal, and embedding a plurality of nickel-chromium heating wires and Pt100 temperature probes; specifically, a plurality of strip-shaped grooves are uniformly formed in the upper surface of the light metal layer 1, and a nickel-chromium heating wire buried along the length direction of each strip-shaped groove and a plurality of Pt100 temperature probes distributed along the length direction of each strip-shaped groove are arranged in each strip-shaped groove; one end of each group of nickel-chromium heating wires is respectively connected with a power supply controller through an electrified wire, and the controller provides required current to realize independent temperature control of the heating wires; in this embodiment, the crisscross distribution of one end that the nickel chromium heater strip is connected with the circular telegram wire is at the warm table both ends, is favorable to guaranteeing that the warm table temperature is even on the one hand, and on the other hand provides sufficient space for the connection of circular telegram wire. Meanwhile, in the embodiment, the temperature of each position of the ceramic layer 2 on the upper layer of the heating table is monitored in real time by using the temperature probe 7, and the upper end of the temperature probe 7 and the lower end surface of the ceramic layer 2 are located on the same plane, so that good contact is achieved, and the measured temperature is guaranteed to be accurate. The gaps in the strip-shaped grooves are filled with heat-conducting glue to conduct heat quickly.
In the using process, the iron fixture is installed after the surface of the ceramic layer 2 is drilled, the heating position is well selected on the surface of the ceramic layer 2, the semiconductor device is clamped on the heating table by the iron fixture, and the heat conducting paste is coated between the semiconductor device and the ceramic layer 2, so that the temperature is conducted well. The iron fixture has the specific structure that the conventional structure in the prior art is adopted, and the embodiment is not limited.
The semiconductor power device testing heating table of the embodiment can realize uniform temperature, and real-time temperature control and monitoring are realized at each heating position; the weight is light, the movement is convenient, and the temperature can be quickly adjusted; the heating requirement of the test analysis of the semiconductor device can be well met.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110159395.XA CN112816846A (en) | 2021-02-05 | 2021-02-05 | Semiconductor power device test warm table |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110159395.XA CN112816846A (en) | 2021-02-05 | 2021-02-05 | Semiconductor power device test warm table |
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| CN112816846A true CN112816846A (en) | 2021-05-18 |
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| CN202110159395.XA Pending CN112816846A (en) | 2021-02-05 | 2021-02-05 | Semiconductor power device test warm table |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6204486B1 (en) * | 1998-11-18 | 2001-03-20 | Nhk Spring Co., Ltd. | Heater unit for semiconductor processing |
| CN202282876U (en) * | 2011-10-22 | 2012-06-20 | 上海华篷防爆科技有限公司 | PTC tank electrical bar using self-temperature-limiting electric tracing band as heating element |
| CN202759603U (en) * | 2012-08-17 | 2013-02-27 | 泰阳电子(东莞)有限公司 | Ceramic heating device |
| KR101463385B1 (en) * | 2013-07-09 | 2014-11-19 | 한국기계연구원 | Heating plate included in heating device used for semiconductor fabrication process and heating device used for semiconductor fabrication process including the same |
| CN106229018A (en) * | 2016-08-17 | 2016-12-14 | 中国核电工程有限公司 | A kind of heater |
| CN206932423U (en) * | 2017-06-22 | 2018-01-26 | 深圳市新伟创实业有限公司 | A kind of contact lithium battery drying oven improvement heating plate |
| CN109603949A (en) * | 2019-02-24 | 2019-04-12 | 云南民族大学 | A kind of manufacturing method of laboratory constant temperature test tube heater |
| CN109743792A (en) * | 2018-12-07 | 2019-05-10 | 武汉航空仪表有限责任公司 | A kind of PTC ceramics heater |
| CN209806107U (en) * | 2019-02-15 | 2019-12-17 | 田文 | remove hydrocarbon heating device |
| CN214750672U (en) * | 2021-02-05 | 2021-11-16 | 浙江大学绍兴微电子研究中心 | Semiconductor power device test warm table |
-
2021
- 2021-02-05 CN CN202110159395.XA patent/CN112816846A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6204486B1 (en) * | 1998-11-18 | 2001-03-20 | Nhk Spring Co., Ltd. | Heater unit for semiconductor processing |
| CN202282876U (en) * | 2011-10-22 | 2012-06-20 | 上海华篷防爆科技有限公司 | PTC tank electrical bar using self-temperature-limiting electric tracing band as heating element |
| CN202759603U (en) * | 2012-08-17 | 2013-02-27 | 泰阳电子(东莞)有限公司 | Ceramic heating device |
| KR101463385B1 (en) * | 2013-07-09 | 2014-11-19 | 한국기계연구원 | Heating plate included in heating device used for semiconductor fabrication process and heating device used for semiconductor fabrication process including the same |
| CN106229018A (en) * | 2016-08-17 | 2016-12-14 | 中国核电工程有限公司 | A kind of heater |
| CN206932423U (en) * | 2017-06-22 | 2018-01-26 | 深圳市新伟创实业有限公司 | A kind of contact lithium battery drying oven improvement heating plate |
| CN109743792A (en) * | 2018-12-07 | 2019-05-10 | 武汉航空仪表有限责任公司 | A kind of PTC ceramics heater |
| CN209806107U (en) * | 2019-02-15 | 2019-12-17 | 田文 | remove hydrocarbon heating device |
| CN109603949A (en) * | 2019-02-24 | 2019-04-12 | 云南民族大学 | A kind of manufacturing method of laboratory constant temperature test tube heater |
| CN214750672U (en) * | 2021-02-05 | 2021-11-16 | 浙江大学绍兴微电子研究中心 | Semiconductor power device test warm table |
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Application publication date: 20210518 |
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